CN107316795B - Focusing ring and plasma processing device - Google Patents
Focusing ring and plasma processing device Download PDFInfo
- Publication number
- CN107316795B CN107316795B CN201610264269.XA CN201610264269A CN107316795B CN 107316795 B CN107316795 B CN 107316795B CN 201610264269 A CN201610264269 A CN 201610264269A CN 107316795 B CN107316795 B CN 107316795B
- Authority
- CN
- China
- Prior art keywords
- annular step
- step surface
- substrate
- focus ring
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
Abstract
The invention provides a focus ring and a plasma processing apparatus. The focusing ring is arranged outside a base station for bearing a substrate in a processing chamber in a surrounding manner and comprises a first annular step surface and a second annular step surface, the first annular step surface and the second annular step surface are both positioned on one side of the focusing ring facing the substrate, the second annular step surface is positioned on the inner side of the first annular step surface and is lower than the first annular step surface, and a concave-convex structure is arranged on the second annular step surface. The focusing ring can reduce the adsorption of the polymer deposited between the edge of the back of the substrate and the second annular step surface on the back of the substrate in the treatment process, and reduce the probability of adhesion between the substrate and the polymer, thereby increasing the stability of substrate transmission and avoiding substrate breakage; meanwhile, the polymer can be prevented from being adhered to the back surface of the substrate, so that the pollution of the substrate to a transmission system in the transmission process is avoided, and the pollution of the substrate to a treatment process in the treatment process is also avoided.
Description
Technical Field
The invention relates to the technical field of plasma processing, in particular to a focusing ring and a plasma processing device.
Background
Plasma devices are widely used in the manufacturing process of Integrated Circuits (ICs) or MEMS devices. The plasma of the system contains a large number of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, and the interaction of the active particles and the substrate causes various physical and chemical reactions on the surface of the material, so that the surface performance of the material is changed.
FIG. 1 is a schematic diagram of a wafer etching process in a plasma chamber. As shown in fig. 2, the electrostatic chuck 4(ESC) fixes the wafer 5 by using the principle of electrostatic adsorption during the plasma processing of the wafer 5. The focusing ring 6 in the lower electrode structure (i.e. the base structure) is located around the electrostatic chuck 4, and has the following two main functions, namely, the wafer 5 is limited, the relative position of the wafer 5 and the electrostatic chuck 4 is ensured to be at a relatively accurate relative position, and the electrostatic chuck 4 is ensured to adsorb and fix the wafer 5; secondly, the plasma distributed at the edge part of the wafer 5 is locally controlled, and the etching uniformity of the edge of the wafer 5 is ensured.
As shown in fig. 3, which is a flow chart of transferring the wafer into and out of the reaction chamber, the electrostatic chuck power supply applies a reverse voltage to the electrode after the etching process is completed, and performs neutralization by inducing charges of a polarity different from that of the wafer itself on the wafer, thereby completing electrostatic discharge; as shown in fig. 4, after the electrostatic discharge is completed, the up-and-down moving mechanism 7 raises the pins 8 (pins), and the wafer 5 is grabbed out of the reaction chamber by a vacuum hand.
As shown in fig. 5 and 6, the front surface of the conventional focus ring is composed of two annular step surfaces, an upper step surface 61 and a lower step surface 62. The step surface of the inner ring of the focusing ring is slightly lower than the upper surface of the electrostatic chuck, so that the wafer can be adsorbed by the electrostatic chuck and subjected to the pressure of helium blown onto the upper surface of the electrostatic chuck, and the wafer can be kept balanced and fixed under the two acting forces. The outer diameter of the ring of the lower step surface of the focusing ring is slightly larger than the wafer, so that the position of the wafer is controlled, the accuracy of the relative position of the wafer can be ensured when the wafer falls on the upper surface of the electrostatic chuck, and the wafer is prevented from lateral sliding.
During the plasma etch process, as shown in FIG. 7. Some of the radicals 9 collide with the focus ring 6 at the edge of the electrostatic chuck 4 due to the poor directionality of the movement of the radicals 9, so that a portion of the radicals 9 is concentrated between the back edge of the wafer 5 and the lower step surface 62 of the focus ring 6, resulting in some polymer 10.
These polymers 10 formed on the backside of the wafer 5 and the lower step surface 62 of the focus ring 6 will have some absorption effect on the wafer 5. As shown in fig. 8, when the wafer 5 is lifted by the needles 8 (pins) after the process is completed, the wafer 5 may be lifted, and even the wafer 5 may be stuck or the wafer 5 may be shifted, so that the wafer 5 may not be transferred out normally. The existence of this kind of sticking phenomenon is comparatively dangerous hidden danger, especially in automated production, because rise needle and vacuum arm stretch into the piece of grabbing for coherent action, the sticking can lead to wafer 5 and manipulator to appear scraping, causes the manipulator to take place the arm damage and can appear the serious condition that wafer 5 was broken even. On the other hand, some polymer 10 is adhered to the back surface of the wafer 5, and the polymer 10 may cause some contamination to the robot for transferring, the transfer chamber, and the cassette for placing the wafer 5 during the transfer back of the wafer 5, and may also cause some contamination to the subsequent process flow.
Disclosure of Invention
The present invention is directed to the above-mentioned problems in the prior art, and provides a focus ring and a plasma processing apparatus. The focusing ring can reduce the contact surface between the second annular step surface and the back surface of the substrate, thereby reducing the adsorption of the polymer deposited between the edge of the back surface of the substrate and the second annular step surface on the back surface of the substrate in the treatment process, reducing the occurrence probability of adhesion between the substrate and the polymer, further increasing the stability of substrate transmission and avoiding substrate breakage; meanwhile, the polymer can be prevented from being adhered to the back surface of the substrate, so that the pollution of the substrate to a transmission system in the transmission process is avoided, and the pollution of the substrate to a treatment process in the treatment process is also avoided.
The invention provides a focusing ring, which is arranged outside a base station for bearing a substrate in a processing chamber in a surrounding manner and comprises a first annular step surface and a second annular step surface, wherein the first annular step surface and the second annular step surface are both positioned on one side of the focusing ring facing the substrate, the second annular step surface is positioned on the inner side of the first annular step surface and is lower than the first annular step surface, and a concave-convex structure is arranged on the second annular step surface.
Preferably, the concave-convex structure comprises a concave part and a convex part which are arranged on the second annular step surface, and the concave part and the convex part are sequentially distributed in a staggered manner.
Preferably, the recesses and the protrusions are evenly distributed.
Preferably, a ratio of an area occupied by the recess on the second annular step surface to an area occupied by the boss on the second annular step surface is greater than 1:1 and less than 20: 1.
Preferably, the longitudinal section shape of the recessed portion along the circumferential direction of the second annular step surface includes a rectangle, a semicircle, a trapezoid, a square or an inverted triangle;
the shape of the longitudinal section of the boss along the circumferential direction of the second annular step surface comprises a rectangle, a semicircle, a trapezoid, a square or an inverted triangle.
Preferably, the second annular step surface and the first annular step surface are parallel to the bearing surface of the base platform for bearing the substrate, and the second annular step surface is lower than the bearing surface of the base platform.
Preferably, the center of the second annular step surface coincides with the center of the base, and the outer diameter of the second annular step surface is larger than the diameter of the substrate.
Preferably, the first annular step surface is higher than the bearing surface of the base platform.
Preferably, the material of the focus ring is the same as that of the substrate.
The invention also provides a plasma processing device which comprises the focusing ring.
The invention has the beneficial effects that: according to the focusing ring provided by the invention, the concave-convex structure is arranged on the second annular step surface, so that the contact surface between the second annular step surface and the back surface of the substrate can be reduced, the adsorption of a polymer deposited between the edge of the back surface of the substrate and the second annular step surface on the back surface of the substrate in the treatment process is reduced, the occurrence probability of adhesion between the substrate and the polymer is reduced, the transmission stability of the substrate is further increased, and the substrate is prevented from being broken; meanwhile, the polymer can be prevented from being adhered to the back surface of the substrate, so that the pollution of the substrate to a transmission system in the transmission process is avoided, and the pollution of the substrate to a treatment process in the treatment process is also avoided.
According to the plasma processing device provided by the invention, by adopting the focusing ring, the pollution and damage to a transmission system and a process system of the plasma processing device caused by polymer adhesion substrates in the processing process are avoided, so that the processing quality of the plasma processing device is improved.
Drawings
FIG. 1 is a schematic diagram of a structure within a plasma etch chamber of the prior art;
FIG. 2 is a sectional view of the focus ring of FIG. 1;
FIG. 3 is a flow diagram of the transfer of a wafer into and out of the reaction chamber of FIG. 1;
FIG. 4 is a schematic view of the wafer of FIG. 1 being released from the electrostatic chuck and then being lifted by the up-and-down motion mechanism;
FIG. 5 is a top view of the focus ring of FIG. 2;
FIG. 6 is a cross-sectional view of the focus ring of FIG. 2;
FIG. 7 is a schematic diagram of polymer formation by cluster of atoms between the edge of the backside of the wafer and the lower step surface of the focus ring during plasma etching;
FIG. 8 is a schematic view showing a side-up phenomenon due to polymer adhesion when the wafer is lifted up by the up-and-down moving mechanism;
FIG. 9 is a top view showing the structure of a focus ring in embodiment 1 of the present invention;
FIG. 10 is a top view of the second annular step surface of FIG. 9, partially enlarged;
FIG. 11 is a cross-sectional view of the focus ring of FIG. 9 in a recessed portion;
FIG. 12 is a cross-sectional view of the second annular step surface of FIG. 9 with the concave portions and the convex portions alternately arranged;
fig. 13 is a structural sectional view of the focus ring arrangement position of fig. 9.
Wherein the reference numbers indicate:
1. a base station; 11. a bearing surface; 12. a substrate; 2. a first annular step surface; 3. a second annular step surface; 31. a relief structure; 310. a recessed portion; 311. a boss portion; 4. an electrostatic chuck; 5. a wafer; 6. a focus ring; 61. an upper step surface; 62. a lower step surface; 7. an up-and-down movement mechanism; 8. a needle; 9. a radical; 10. a polymer.
Detailed Description
In order to make the technical solution of the present invention better understood by those skilled in the art, a focus ring and a plasma processing apparatus provided by the present invention are described in further detail below with reference to the accompanying drawings and the detailed description.
Example 1:
the present embodiment provides a focus ring, as shown in fig. 9-11, enclosed outside a base 1 for carrying a substrate in a processing chamber, and including a first annular step surface 2 and a second annular step surface 3, where the first annular step surface 2 and the second annular step surface 3 are both located on a substrate-facing side of the focus ring, the second annular step surface 3 is located on an inner side of the first annular step surface 2 and is lower than the first annular step surface 2, and a concave-convex structure 31 is provided on the second annular step surface 3.
The concave-convex structure 31 is arranged on the second annular step surface 3, so that the contact surface between the second annular step surface 3 and the back surface of the substrate can be reduced, the adsorption of the polymer deposited between the edge of the back surface of the substrate and the second annular step surface 3 on the back surface of the substrate in the treatment process is reduced, the occurrence probability of adhesion between the substrate and the polymer is reduced, the transmission stability of the substrate is further improved, and the substrate is prevented from being broken; meanwhile, the polymer can be prevented from being adhered to the back surface of the substrate, so that the pollution of the substrate to a transmission system in the transmission process is avoided, and the pollution of the substrate to a treatment process in the treatment process is also avoided.
In the present embodiment, as shown in fig. 10, the concave-convex structure 31 includes concave portions 310 and convex portions 311 provided on the second annular step surface 3, and the concave portions 310 and the convex portions 311 are sequentially distributed in a staggered manner. The provision of the recess 310 enables the polymer deposited between the substrate back side edge and the second annular step surface 3 during processing to be mostly collected in the recess 310, thereby reducing the contact area of the second annular step surface 3 with the substrate back side edge and further reducing the adsorption of the polymer to the substrate back side.
In this embodiment, the concave portions 310 and the convex portions 311 are uniformly distributed. By the arrangement, the electric field applied to the edge area of the base station 1 can be uniformly distributed, so that the plasma distribution corresponding to the edge area of the substrate in the treatment process is uniform, and the treatment uniformity of the edge area of the substrate is ensured.
In the present embodiment, as shown in fig. 12, the ratio of the occupied area of the recessed portion 310 on the second annular step surface 3 to the occupied area of the projecting portion 311 on the second annular step surface 3 is greater than 1:1 and less than 20: 1. That is, the area occupied by the recess 310 is larger than the area occupied by the projection 311, so that the polymer deposited between the back edge of the substrate 12 and the second annular step surface 3 during the processing is mostly accumulated in the recess 310, and only a small portion of the polymer accumulated on the surface of the projection 311 is in contact with the back edge of the substrate 12, and the majority of the polymer accumulated in the recess 310 is not in contact with the back edge of the substrate 12, thereby reducing the contact area of the second annular step surface 3 and the back edge of the substrate 12, and further reducing the adsorption of the polymer to the back surface of the substrate 12.
In the present embodiment, the longitudinal section shape of the recessed portion 310 along the circumferential direction of the second annular step surface 3 is rectangular, and the longitudinal section shape of the raised portion 311 along the circumferential direction of the second annular step surface 3 is also rectangular, that is, the shapes of the recessed portion 310 and the raised portion 311 are both rectangular.
It should be noted that the longitudinal section of the recessed portion 310 along the circumferential direction of the second annular step surface 3 may have another shape such as a semicircular shape, a trapezoidal shape, a square shape, or an inverted triangular shape; the shape of the longitudinal section of the protrusion 311 along the circumferential direction of the second annular step surface 3 may be a semicircular shape, a trapezoidal shape, a square shape, an inverted triangular shape, or other shapes, and the specific shapes of the recess 310 and the protrusion 311 are not limited as long as the recess 310 and the protrusion 311 are uniformly distributed on the second annular step surface 3.
In the present embodiment, as shown in fig. 13, the second annular step surface 3 and the first annular step surface 2 are parallel to the carrying surface 11 of the base platform 1 for carrying the substrate 12, and the second annular step surface 3 is lower than the carrying surface 11 of the base platform 1. By the arrangement, the whole focusing ring is in the shape of an annular groove, the position of the substrate 12 on the bearing surface 11 of the base platform 1 can be limited by the second step surface 3 with the height lower than that of the first annular step surface 2, and the arrangement position of the substrate 12 on the base platform 1 is limited in the area defined by the second annular step surface 3, so that the relative position of the substrate 12 and the base platform 1 is more accurate, the bearing surface 11 of the base platform 1 can firmly fix the substrate 12 in the treatment process, and the substrate 12 can be prevented from sliding laterally. In addition, the height of the second annular step surface 3 is slightly lower than the bearing surface 11 of the base platform 1, so that the substrate 12 can be attached to the bearing surface 11 of the base platform 1, the bearing surface 11 of the base platform 1 can adsorb and fix the substrate 12, and the stability of the substrate 12 in the processing process is ensured.
In the present embodiment, the outer diameter of the second annular step surface 3 is larger than the diameter of the substrate 12. In practical design, the outer diameter of the second annular step surface 3 is slightly larger than the diameter of the substrate 12, so that the arrangement position of the substrate 12 on the base platform 1 can be well controlled, and the accuracy of the relative position of the substrate 12 on the bearing surface 11 of the base platform 1 is ensured.
In this embodiment, the first annular step surface 2 is higher than the bearing surface 11 of the base 1. By the arrangement, the focusing ring which is integrally in the shape of the annular groove can form a fence at the periphery of the base station 1, and the fence of the focusing ring has a certain maintenance function on the uniform distribution of the electric field at the edge of the base station 1, so that the plasma distribution at the edge area of the substrate 12 is kept uniform in the treatment process, and the treatment uniformity of the substrate 12 is further ensured.
In this embodiment, the material of the focus ring is the same as that of the substrate 12. If the focusing ring and the substrate 12 are made of quartz, the arrangement of the focusing ring can prevent impurities from being introduced in the treatment process of the substrate 12, so that the quality of the treatment process is ensured.
Beneficial effects of example 1: in the focus ring provided in embodiment 1, by providing the concave-convex structure on the second annular step surface, the contact surface between the second annular step surface and the back surface of the substrate can be reduced, so that the adsorption of the polymer deposited between the edge of the back surface of the substrate and the second annular step surface on the back surface of the substrate during the processing process is reduced, the occurrence probability of adhesion between the substrate and the polymer is reduced, the stability of substrate transmission is further increased, and the substrate is prevented from being broken; meanwhile, the polymer can be prevented from being adhered to the back surface of the substrate, so that the pollution of the substrate to a transmission system in the transmission process is avoided, and the pollution of the substrate to a treatment process in the treatment process is also avoided.
Example 2:
this embodiment provides a plasma processing apparatus including the focus ring in embodiment 1. The plasma processing apparatus in this embodiment includes a plasma etching apparatus.
By adopting the focus ring in embodiment 1, the contamination and damage to the transfer system and process system of the plasma processing apparatus due to the polymer adhesion to the substrate during the processing process are avoided, thereby improving the processing quality of the plasma processing apparatus.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (8)
1. A focusing ring is arranged around the outer side of a base station used for bearing a substrate in a processing chamber and comprises a first annular step surface and a second annular step surface, wherein the first annular step surface and the second annular step surface are both positioned on one side of the focusing ring facing the substrate, and the second annular step surface is positioned on the inner side of the first annular step surface and is lower than the first annular step surface; the concave-convex structure is arranged on the second annular step surface and can reduce the contact area between the second annular step surface and the back surface of the substrate; wherein the content of the first and second substances,
the concave-convex structure comprises a concave part and a convex part which are arranged on the second annular step surface, and the concave part and the convex part are distributed in a staggered mode in sequence;
the ratio of the occupied area of the recessed portion on the second annular step surface to the occupied area of the raised portion on the second annular step surface is greater than 1:1 and less than 20: 1.
2. The focus ring of claim 1, wherein the depressions and the protrusions are evenly distributed.
3. The focus ring of claim 1, wherein a longitudinal sectional shape of the recess along a circumferential direction of the second annular step face includes a rectangle, a semicircle, a trapezoid, a square, or an inverted triangle;
the shape of the longitudinal section of the boss along the circumferential direction of the second annular step surface comprises a rectangle, a semicircle, a trapezoid, a square or an inverted triangle.
4. The focus ring of claim 1, wherein the second annular step surface and the first annular step surface are parallel to a carrying surface of the submount that carries the substrate, and the second annular step surface is lower than the carrying surface of the submount.
5. The focus ring of claim 4, wherein an outer diameter of the second annular step surface is larger than a diameter of the substrate.
6. The focus ring of claim 5, wherein the first annular step surface is higher than a bearing surface of the submount.
7. The focus ring of claim 1, wherein the material of the focus ring is the same as the material of the substrate.
8. A plasma processing apparatus comprising the focus ring of any one of claims 1 to 7.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610264269.XA CN107316795B (en) | 2016-04-26 | 2016-04-26 | Focusing ring and plasma processing device |
| TW106102644A TWI646573B (en) | 2016-04-26 | 2017-01-24 | Focusing ring and plasma processing device |
| PCT/CN2017/072324 WO2017185842A1 (en) | 2016-04-26 | 2017-01-24 | Focusing ring and plasma treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610264269.XA CN107316795B (en) | 2016-04-26 | 2016-04-26 | Focusing ring and plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107316795A CN107316795A (en) | 2017-11-03 |
| CN107316795B true CN107316795B (en) | 2020-01-03 |
Family
ID=60161809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610264269.XA Active CN107316795B (en) | 2016-04-26 | 2016-04-26 | Focusing ring and plasma processing device |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN107316795B (en) |
| TW (1) | TWI646573B (en) |
| WO (1) | WO2017185842A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113205991B (en) * | 2021-04-09 | 2022-09-20 | 华虹半导体(无锡)有限公司 | Focusing ring |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373899A (en) * | 1999-06-30 | 2002-10-09 | 兰姆研究有限公司 | Techniques for improving etch rate uniformity |
| CN101625958A (en) * | 2008-07-09 | 2010-01-13 | 世界先进积体电路股份有限公司 | Semiconductor process unit and focusing ring thereof |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1779921A (en) * | 2004-11-17 | 2006-05-31 | 上海华虹Nec电子有限公司 | Internal focusing ring for etching plasma |
| TWI375270B (en) * | 2008-06-30 | 2012-10-21 | Vanguard Int Semiconduct Corp | Semiconductor manufacturing apparatuses and focus rings thereof |
| CN102522305B (en) * | 2011-12-27 | 2015-01-07 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and focus ring assembly |
| CN202405228U (en) * | 2012-01-20 | 2012-08-29 | 中微半导体设备(上海)有限公司 | Focusing ring for plasma processing device |
| JP6400273B2 (en) * | 2013-03-11 | 2018-10-03 | 新光電気工業株式会社 | Electrostatic chuck device |
| CN103247507A (en) * | 2013-04-08 | 2013-08-14 | 上海华力微电子有限公司 | Compound plasma focusing ring and method for replacing same |
| JP6689020B2 (en) * | 2013-08-21 | 2020-04-28 | 東京エレクトロン株式会社 | Plasma processing device |
| JP2015115421A (en) * | 2013-12-10 | 2015-06-22 | 東京エレクトロン株式会社 | Plasma processing apparatus and focus ring |
| CN104752138B (en) * | 2013-12-27 | 2017-03-15 | 宁波江丰电子材料股份有限公司 | Focusing ring and the sputterer of application focusing ring |
-
2016
- 2016-04-26 CN CN201610264269.XA patent/CN107316795B/en active Active
-
2017
- 2017-01-24 TW TW106102644A patent/TWI646573B/en active
- 2017-01-24 WO PCT/CN2017/072324 patent/WO2017185842A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373899A (en) * | 1999-06-30 | 2002-10-09 | 兰姆研究有限公司 | Techniques for improving etch rate uniformity |
| CN101625958A (en) * | 2008-07-09 | 2010-01-13 | 世界先进积体电路股份有限公司 | Semiconductor process unit and focusing ring thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017185842A1 (en) | 2017-11-02 |
| TW201805991A (en) | 2018-02-16 |
| CN107316795A (en) | 2017-11-03 |
| TWI646573B (en) | 2019-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101415551B1 (en) | Electrostatic chuck, method of manufacturing the same and apparatus for processing a substrate including the same | |
| KR101202559B1 (en) | Apparatus for removing foreign material from substrate and method for removing foreign material from substrate | |
| CN107851573B (en) | Substrate processing method and substrate processing apparatus | |
| KR101980994B1 (en) | Substrate processing device and substrate processing method | |
| KR20050013484A (en) | Substrate supporting apparatus and substrate detaching method | |
| WO2008018731A1 (en) | Device for supporting substrate | |
| KR100602342B1 (en) | Magnetic mirror for preventing wafer edge damage during dry etching | |
| JP2001185607A5 (en) | ||
| CN107316795B (en) | Focusing ring and plasma processing device | |
| CN101211810B (en) | Electrostatic chuck apparatus | |
| TW201624593A (en) | Methods for texturing a chamber component and chamber components having a textured surface | |
| KR20170036165A (en) | Substrate supporting unit and substrate treating apparatus including the unit | |
| KR101099733B1 (en) | Apparatus for processing substrate | |
| KR101310109B1 (en) | Electrostatic Chuck formed pad in edge of ceramic body | |
| CN109068467A (en) | A kind of Destaticizing device and neutralizing method | |
| KR101402880B1 (en) | Electro-Static Chuck Having Wood-profile Electrode Pattern and Method for Processing Substrate Using The Same | |
| KR20070033798A (en) | Arm blade of wafer transfer robot | |
| CN212991066U (en) | Electrostatic chuck | |
| KR101496552B1 (en) | Apparatus for drying wafer | |
| CN105590890B (en) | A kind of neutralization method of electrostatic chuck sheet charge | |
| TW202036701A (en) | Substrate processing apparatus, substrate processing method, and semiconductor producing method | |
| TWI587442B (en) | Mask substrate supporting structure for plasma process | |
| KR100943494B1 (en) | Apparatus of etching a semiconductor device | |
| KR20170057804A (en) | Chuck pin, Method for manufacturing a chuck pin, Apparatus for treating a substrate | |
| KR101420091B1 (en) | Vacuum chuck having coating surface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |