TW202036701A - Substrate processing apparatus, substrate processing method, and semiconductor producing method - Google Patents

Abstract

A substrate processing apparatus (100) processes a substrate having a pattern (PT) including a plurality of structures (23). The substrate processing apparatus (100) includes a process liquid supply section (9), a first electrode (11), a second electrode (32), and a power source (17). The process liquid supply section (9) supplies a process liquid (LQ) having a conductivity to a substrate (W). The first electrode (11) is brought into contact with the process liquid (LQ) attached to the substrate (W). The second electrode (32) is brought into contact with the substrate (W). The power source (17) applies direct current voltage to a location between the first electrode (11) and the second electrode (32).

Description

Substrate processing device, substrate processing method, and semiconductor manufacturing method

The present invention relates to a substrate processing device, a substrate processing method and a semiconductor manufacturing method.

The substrate processing apparatus described in Patent Document 1 includes a counter member, a plurality of power supply devices, and a control device. The facing member faces the lower surface of the base plate. The opposing member system includes a plurality of electrodes. The plurality of electrodes are respectively arranged at a plurality of positions with different distances in the radial direction from the rotation axis. The plurality of power supply devices respectively apply DC voltage to the plurality of electrodes. The control device gives instructions to each power supply device in such a way that the applied voltage is sequentially increased from the radially inner side to the radially outer side. As a result, the uniformity of etching can be improved.

The reason why the uniformity of etching can be improved is as follows. That is, the etching amount of the substrate is the largest in the center of the upper surface of the substrate, and decreases as the distance from the center of the upper surface of the substrate is separated. On the other hand, when the upper surface of the substrate is charged, the etching rate increases, and the etching rate further increases as the charge amount of the upper surface of the substrate increases. Therefore, when the upper surface of the substrate is charged in such a manner that the amount of charge is continuously or stepwise increased as it moves away from the center of the upper surface of the substrate, the uniformity of etching can be improved. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2016-184701 A.

[The problem to be solved by the invention]

However, the substrate processing apparatus described in Patent Document 1 merely improves the uniformity of etching between the radially inner side and the radially outer side of the substrate.

On the other hand, in recent years, patterns formed on substrates have been miniaturized. That is, on the surface of the substrate, the gaps between the plurality of microstructures constituting the pattern are narrowed. Therefore, it may be difficult for the conductive components of the processing liquid such as etching liquid to enter the gaps between the plurality of fine structures. On the other hand, when a certain treatment is completed, it may happen that it is desired to quickly stop the conductive component of the treatment liquid from entering into the gaps between a plurality of fine structures.

The present invention was developed in view of the above-mentioned problems, and its object is to provide a substrate processing apparatus, a substrate processing method, and a semiconductor capable of controlling the movement of the conductive component of the processing liquid with respect to the gap between a plurality of structures used to form the pattern of the substrate Manufacturing method. [Means to solve the problem]

According to one aspect of the present invention, the substrate processing apparatus processes a substrate with a pattern, and the pattern includes a plurality of structures. The substrate processing apparatus includes a processing liquid supply unit, a first electrode, a second electrode, and a power supply unit. The processing liquid supply unit supplies a conductive processing liquid to the substrate. The first electrode is in contact with the processing solution that has adhered to the substrate. The second electrode is in contact with the aforementioned substrate. The power supply unit applies a DC voltage between the first electrode and the second electrode.

Preferably, in the substrate processing apparatus of the present invention, the power supply unit applies the DC voltage between the first electrode and the second electrode so that the polarity of the surface of each of the plurality of structures becomes the same as that of the aforementioned The polarity of the treatment liquid is the opposite polarity.

Preferably, in the substrate processing apparatus of the present invention, the power supply unit applies the DC voltage between the first electrode and the second electrode so that the polarity of the surface of each of the plurality of structures becomes the same as that of the aforementioned The polarity of the treatment liquid is the same polarity.

Preferably, in the substrate processing apparatus of the present invention, the power supply unit applies the DC voltage between the first electrode and the second electrode and charges the surface of each of the plurality of structures to cancel out the plurality of structures. The boundary of the surface of each of the aforementioned structures has a zeta potential.

Preferably, in the substrate processing apparatus of the present invention, the processing liquid supply unit functions as the first electrode.

Preferably, the substrate processing apparatus of the present invention is further provided with a substrate holding portion useful for holding the aforementioned substrate. Preferably, the substrate holding portion functions as the second electrode.

Preferably, in the substrate processing apparatus of the present invention, the material of at least one of the material of the first electrode and the material of the second electrode is a resin material containing carbon.

According to another aspect of the present invention, a substrate with a pattern is processed in a substrate processing method, and the pattern includes a plurality of structures. The substrate processing method includes: a step of supplying a conductive processing solution to the substrate; a step of contacting a first electrode with the processing solution attached to the substrate; a step of contacting a second electrode with the substrate; And a step of applying a DC voltage between the first electrode and the second electrode.

Preferably, in the substrate processing method of the present invention, in the step for applying the DC voltage, the DC voltage is applied between the first electrode and the second electrode so that each of the plurality of structures The polarity of the surface becomes the opposite polarity to the polarity of the aforementioned treatment liquid.

Preferably, in the substrate processing method of the present invention, in the step for applying the DC voltage, the DC voltage is applied between the first electrode and the second electrode so that each of the plurality of structures The polarity of the surface becomes the same polarity as the polarity of the aforementioned treatment liquid.

Preferably, in the substrate processing method of the present invention, in the step for applying the DC voltage, the DC voltage is applied between the first electrode and the second electrode, and each of the plurality of structures is The surface is charged to offset the boundary potential of each of the multiple aforementioned structures.

Preferably, in the substrate processing method of the present invention, in the step for supplying the processing liquid to the substrate, the processing liquid supply unit supplies the processing liquid to the substrate. Preferably, in the step for bringing the first electrode into contact, the processing liquid supply unit functions as the first electrode.

Preferably, in the substrate processing method of the present invention, in the step for bringing the second electrode into contact, the substrate holding portion for holding the substrate functions as the second electrode.

Preferably, in the substrate processing method of the present invention, at least one of the material of the first electrode and the material of the second electrode is a resin material containing carbon.

According to another aspect of the present invention, in a semiconductor manufacturing method, a semiconductor substrate having a pattern including a plurality of structures is processed and a semiconductor belonging to the processed semiconductor substrate is manufactured. The semiconductor manufacturing method includes: a step of supplying a conductive treatment solution to the semiconductor substrate; a step of bringing a first electrode into contact with the treatment solution attached to the semiconductor substrate; and a step of bringing a second electrode into contact with the semiconductor substrate The process; and the process of applying a DC voltage between the first electrode and the second electrode. [Invention Effect]

According to the present invention, it is possible to provide a substrate processing apparatus, a substrate processing method, and a semiconductor manufacturing method that can control the movement of the conductive component of the processing liquid with respect to the space between the plurality of structures that constitute the pattern of the substrate.

The following describes embodiments of the present invention with reference to the drawings. In addition, the same reference numerals are attached to the same or equivalent parts in the drawings, and the description is not repeated. In addition, in the embodiment of the present invention, the X axis, the Y axis, and the Z axis system are orthogonal to each other, the X axis and the Y axis system are parallel to the horizontal direction, and the Z axis system is parallel to the vertical direction. In addition, for the simplification of the drawing, the oblique lines of the display cross section are appropriately omitted.

[Implementation Mode One] The substrate processing apparatus 100 according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 7. The substrate processing apparatus 100 processes the substrate W with the processing liquid. The processing liquid will be referred to as "processing liquid LQ" below. The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED; Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for an optical magnetic disk, an optical disk Substrates for photomasks, ceramic substrates, or substrates for solar cells. The substrate W is, for example, a substantially circular plate shape. In the following description of the first embodiment, the substrate W is a semiconductor substrate.

First, the substrate processing apparatus 100 will be described with reference to FIG. 1. FIG. 1 is a schematic cross-sectional view showing a substrate processing apparatus 100. As shown in FIG. 1, the substrate processing apparatus 100 supplies the processing liquid LQ to the substrate W while rotating the substrate W, and processes the substrate W. Specifically, the substrate processing apparatus 100 is provided with a chamber 1, a spin chuck 3, a spin axis 5, a spin motor 7, a nozzle 9, a nozzle moving part 10, Valve V1, piping P1, first electrode 11, electrode moving part 13, nozzle 15, valve V2, piping P2, multiple guards 16, power supply device 17, control device 19, wiring LN1, wiring LN2, and at least one The second electrode 32. In the first embodiment, the substrate processing apparatus 100 includes a plurality of second electrodes 32. The power supply device 17 corresponds to an example of the "power supply unit".

The chamber 1 has a slightly box shape. The chamber 1 contains the substrate W, the rotation jig 3, the rotation shaft 5, the rotation motor 7, the nozzle 9, the nozzle moving part 10, the first electrode 11, the electrode moving part 13, the nozzle 15, a part of the piping P2, and a plurality of protective covers 16. Part of wiring LN1 and part of wiring LN2.

The rotation jig 3 holds and rotates the substrate W. Specifically, the rotation jig 3 rotates the substrate W around the rotation axis AX of the rotation jig 3 while holding the substrate W horizontally in the chamber 1.

The rotation jig 3 includes a plurality of jig members 31 and a spin base 33. A plurality of clamp members 31 are installed on the rotation base 33. The plurality of clamp members 31 hold the substrate W in a horizontal posture. Therefore, the clamp member 31 is in contact with the substrate W. The plural jig members 31 correspond to an example of the "substrate holding portion". The rotation base 33 has a substantially circular plate shape, and supports a plurality of clamp members 31 in a horizontal posture.

The rotation shaft 5 is fixed to the rotation base 33. In addition, the autorotation shaft 5 is fixed to the drive shaft of the autorotation motor 7. In addition, the autorotation motor 7 rotates the autorotation shaft 5, thereby rotating the autorotation base 33 around the rotation axis AX. As a result, the substrate W held by the plurality of clamp members 31 provided on the rotation base 33 rotates around the rotation axis AX. The rotation shaft 5 has a substantially cylindrical shape and has an internal space 5a.

The nozzle 9 supplies the processing liquid LQ to the rotating substrate W. The nozzle 9 corresponds to an example of the "processing liquid supply unit".

The treatment liquid LQ has conductivity. The treatment liquid LQ contains a conductive component having a positive polarity (for example, a positive ion component) or a conductive component having a negative polarity (for example, a negative ion component). The conductive component having a positive polarity is a conductive component that has been charged to be positive, and is a component used to process the substrate W. A conductive component having a negative polarity is a conductive component that has been charged to be negative, and is a component used to process the substrate W.

In the following description, a conductive component having a positive polarity is described as a "positive conductive component", and a conductive component having a negative polarity is described as a "negative conductive component". In addition, when there is no need to distinguish between "positive conductive components" and "negative conductive components", there are cases where "positive conductive components" and "negative conductive components" are collectively referred to as "conductive components".

The treatment liquid LQ is, for example, an etching liquid. In the case where the processing liquid LQ is an etching liquid, the positive conductive component and the negative conductive component are components for etching the substrate W, respectively.

The etching liquid system as the treatment liquid LQ containing the positive conductive component is, for example, hydrofluoric acid, hydrogen peroxide water, or nitric acid. The etching solution as the treatment solution LQ containing the negative conductive component is, for example, ammonia, TMAH (tetramethyl ammonium hydroxide), or TBAH (tetrabutylammonium hydroxide). In addition, as long as the treatment liquid LQ has conductivity, the type of the treatment liquid LQ is not particularly limited.

The nozzle moving unit 10 moves the nozzle 9 between the processing position and the retracted position. The processing position indicates the position above the substrate W. The nozzle 9 supplies the processing liquid LQ to the substrate W when located at the processing position. The retreat position means a position that is located outside the substrate W in the radial direction of the substrate W.

Specifically, the nozzle moving unit 10 includes an arm 111, a rotating shaft 113, and a nozzle moving mechanism 115. The arm 111 extends in a slightly horizontal direction. A nozzle 9 is attached to the front end of the arm 111. The arm 111 is coupled to the rotating shaft 113. The rotating shaft 113 extends in a slightly vertical direction. The nozzle moving mechanism 115 rotates the rotation shaft 113 around a rotation axis along a substantially vertical direction, and rotates the arm 111 along a substantially horizontal plane. As a result, the nozzle 9 moves along a slightly horizontal plane. For example, the nozzle moving mechanism 115 includes an arm swing motor for rotating the rotation shaft 113 around the rotation axis. The arm swing motor is, for example, a servo motor. In addition, the nozzle moving mechanism 115 raises and lowers the rotating shaft 113 in a substantially vertical direction and raises and lowers the arm 111. As a result, the nozzle 9 moves in a slightly vertical direction. For example, the nozzle moving mechanism 115 includes a ball screw mechanism and an arm lift motor, and the arm lift motor applies driving force to the ball screw mechanism. The arm lifting motor is, for example, a servo motor.

The pipe P1 supplies the processing liquid LQ to the nozzle 9. The valve V1 switches to start the supply of the processing liquid LQ to the nozzle 9 and stop the supply of the processing liquid LQ to the nozzle 9.

After the substrate W is processed by the processing liquid LQ, the nozzle 15 supplies the cleaning liquid to the rotating substrate W. The cleaning fluid is, for example, deionized water, carbonated water, electrolyzed ionized water, hydrogen water, ozone water, or hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm). As long as the substrate W can be cleaned, the type of cleaning liquid is not particularly limited.

The pipe P2 supplies the cleaning liquid to the nozzle 15. The valve V2 switches to start the supply of the cleaning liquid to the nozzle 15 and stop the supply of the cleaning liquid to the nozzle 15.

The first electrode 11 is in contact with the processing liquid LQ attached to the substrate W. The material of the first electrode 11 is, for example, a resin material containing carbon. The carbon system is, for example, carbon nanotubes. The resin system is, for example, fluororesin. The fluororesin system is, for example, polytetrafluoroethylene (tetrafluoroethylene) or polymonochlorotrifluoroethyle (trifluoride). By configuring the first electrode 11 in this way, the conductivity of the first electrode 11 can be ensured and the chemical resistance can be improved in the first embodiment.

The electrode moving part 13 moves the first electrode 11 between the contact position and the retracted position. The contact position indicates a position where the first electrode 11 contacts the processing liquid LQ attached to the substrate W from above the processing liquid LQ. The retreat position means a position that is located outside the substrate W in the radial direction of the substrate W. Specifically, the electrode moving part 13 includes an arm 131, a rotating shaft 133 and an electrode moving mechanism 135. The first electrode 11 is attached to the front end of the arm 131. The arm 131 is driven by the rotating shaft 133 and the electrode moving mechanism 135 to rotate along a substantially horizontal plane or move up and down in a substantially vertical direction. In addition, the configurations of the arm 131, the rotating shaft 133, and the electrode moving mechanism 135 are the same as those of the arm 111, the rotating shaft 113, and the nozzle moving mechanism 115, respectively.

The second electrode 32 is in contact with the substrate W. In the first embodiment, the clamp member 31 functions as the second electrode 32. Therefore, according to the first embodiment, the number of parts can be reduced compared with the case where the second electrode 32 is provided as a dedicated part. The material of the second electrode 32 (that is, the clamp member 31) is, for example, a resin material containing carbon. That is, the material of the second electrode 32 is the same as the material of the first electrode 11. By configuring the second electrode 32 in this way, in the first embodiment, the conductivity of the second electrode 32 can be ensured and the chemical resistance can be improved.

In addition, for example, the material of at least one of the first electrode 11 and the second electrode 32 may be a resin material containing carbon. In addition, the materials of the first electrode 11 and the second electrode 32 are not particularly limited as long as they have conductivity.

The wiring LN1 connects the first electrode 11 and the power supply device 17. The wiring LN2 connects each of the plurality of second electrodes 32 and the power supply device 17. The wiring LN2 passes through the internal space 5 a of the rotation shaft 5 and is drawn from each of the plurality of second electrodes 32 to the power supply device 17. In addition, in the case where the substrate processing apparatus 100 has one second electrode 32, the wiring LN2 is connected to one second electrode 32 (that is, one jig member 31).

The power supply device 17 applies a DC voltage between the first electrode 11 and the second electrode 32. Therefore, according to the first embodiment, a plurality of structures constituting the pattern of the substrate W can be charged to be positive or negative. As a result, it is possible to control the movement of the conductive component of the processing liquid LQ with respect to the gap between the plurality of structures constituting the pattern of the substrate W.

For example, when a plurality of structures forming a pattern of the substrate W are positively charged, the negative conductive component contained in the treatment liquid LQ can be induced to the gaps between the plurality of structures. Therefore, the negative conductive component quickly enters the gaps between the plurality of structures. As a result, a plurality of structures can be effectively processed by the negative conductive component.

For example, when a plurality of structures forming a pattern of the substrate W is negatively charged, the positive conductive component contained in the processing liquid LQ can be induced to the gaps between the plurality of structures. Therefore, the positive conductive component quickly enters the gaps between the plurality of structures. As a result, a plurality of structures can be effectively processed by the positive conductive component.

For example, after a certain process is completed, when a plurality of structures constituting the pattern of the substrate W becomes positively charged, the positive conductive component contained in the processing liquid LQ is prevented from entering the gaps between the plurality of structures. Therefore, the processing of the positive conductive component on the plurality of structures is quickly stopped. As a result, it is possible to suppress the positive conductive component from overly processing a plurality of structures.

For example, when a plurality of structures forming a pattern of the substrate W becomes negatively charged after a certain process is completed, the negative conductive components contained in the processing liquid LQ are prevented from entering the gaps between the plurality of structures. Therefore, the processing of the negative conductive component on the plurality of structures is quickly stopped. As a result, it is possible to suppress the negative conductive component from excessively processing a plurality of structures.

For example, in the case where the processed product existing in the gap between a plurality of structures is positively charged, when the plurality of structures forming the pattern of the substrate W are charged positively, the processed product can be effectively discharged from the gap Product. The product after the treatment is, for example, a substance produced by the reaction between the treatment liquid LQ and the structure.

For example, in the case where the product existing in the gap between the plurality of structures is charged negatively, when the plurality of structures forming the pattern of the substrate W are charged negatively, it can be effectively discharged from the gap Product after treatment.

The plurality of protective covers 16 each have a substantially cylindrical shape. The plurality of protective covers 16 respectively catch the liquid (processing liquid LQ or cleaning liquid) discharged from the substrate W. In addition, the protective cover 16 is provided in accordance with the type of liquid discharged from the substrate W.

The control device 19 controls each configuration of the substrate processing apparatus 100. The control device 19 includes a computer. Specifically, the control device 19 includes a control unit 191 and a storage unit 193. The control unit 191 controls the rotation jig 3, the rotation motor 7, the nozzle moving unit 10, the valve V1, the electrode moving unit 13, the valve V2, the plurality of shields 16, and the power supply device 17. The control unit 191 includes a processor such as a CPU (Central Processing Unit; central processing unit). The memory unit 193 includes a memory device, and stores data and computer programs. The memory device includes a main memory device like a semiconductor memory and an auxiliary memory device like a semiconductor memory and/or a hard disk drive. The memory device may also include removable media. The processor of the control unit 191 executes the computer program memorized in the memory device of the memory unit 193, and controls the rotation jig 3, the rotation motor 7, the nozzle moving unit 10, the valve V1, the electrode moving unit 13, the valve V2, and a plurality of protective covers 16 and power supply device 17.

Next, the operation of the substrate processing apparatus 100 when the negative conductive component is induced to the gap between the plurality of structures of the substrate W when the processing liquid LQ contains the negative conductive component will be described with reference to FIGS. 2 to 4. In the description of FIGS. 2 to 4, an example in which the processing liquid LQ is an etching liquid is described.

First, the general behavior of the treatment liquid LQ will be described with reference to FIG. 2. FIG. 2 is a diagram showing the behavior of the processing liquid LQ attached to the substrate W in a general substrate processing apparatus. In FIG. 2, a part of the surface of the substrate W is enlarged and shown.

As shown in FIG. 2, the substrate W has a substrate body 21 and a pattern PT. The substrate body 21 is formed of silicon. The pattern PT is, for example, a fine pattern. The pattern PT includes a plurality of structures 23. The structure 23 is, for example, a fine structure.

Each of the plurality of structures 23 extends along a predetermined direction D. The predetermined direction D indicates a direction crossing the surface 21a of the substrate body 21. In the first embodiment, the predetermined direction D indicates a direction slightly orthogonal to the surface 21a of the substrate body 21. The distance L between the adjacent structures 23 is, for example, 10 nm or less.

Each of the plural structures 23 is composed of a single layer or a plurality of layers. In the case where the structure 23 is composed of a single layer, the structure 23 is an insulating layer, a semiconductor layer, or a conductive layer. In the case where the structure 23 is composed of multiple layers, the structure 23 may include an insulating layer, a semiconductor layer, a conductive layer, or an insulating layer, a semiconductor layer, and a conductive layer. Of two or more.

The insulating layer is, for example, a silicon oxide film or a silicon nitride film. The semiconductor layer system is, for example, a poly silicon film (poly silicon film) or an amorphous silicon film (amorphous silicon film). The conductor layer is, for example, a metal film. The metal film is, for example, a film containing at least one of titanium, tungsten, copper, and aluminum.

In FIG. 2, the processing liquid LQ is supplied to the substrate W, and the processing liquid LQ is adhered to the substrate W. The treatment liquid LQ contains a plurality of negative conductive components ECN. On the other hand, since the boundary potential ZP is generated on the surface of each of the plurality of structures 23, the surface of each of the plurality of structures 23 is charged negatively by the boundary potential ZP. Therefore, the polarity of the structure 23 is the same as the polarity of the negative conductive component ECN. As a result, the negative conductive component ECN repels the structure 23 and is difficult to enter the gap GP between the plurality of structures 23.

Therefore, in the first embodiment, the substrate processing apparatus 100 cancels the boundary potential ZP generated on the surface of each of the plurality of structures 23, and changes the polarity of the surface of each of the plurality of structures 23 to the negative conductive component. The opposite polarity (that is, the positive polarity) of the ECN charges the surface of each of the plurality of structures 23. That is, in the substrate processing apparatus 100, the surface of each of the plurality of structures 23 is positively charged. The details are as follows.

FIG. 3 is a schematic diagram showing the structure of the substrate processing apparatus 100 according to the first embodiment in which the surfaces of the plurality of structures 23 of the substrate W are charged at a timing. As shown in FIG. 3, the first electrode 11 is in contact with the processing liquid LQ attached to the substrate W. On the other hand, the second electrode 32 is in contact with the substrate W. In addition, the negative electrode of the power supply device 17 is connected to the first electrode 11 by the wiring LN1. On the other hand, the positive electrode of the power supply device 17 is connected to the second electrode 32 by the wiring LN2. In addition, the power supply device 17 applies a DC voltage between the first electrode 11 and the second electrode 32. Therefore, a positive charge is supplied to the substrate W from the positive electrode of the power supply device 17. As a result, the boundary of the surface of the plurality of structures 23 of the substrate W is offset to the potential ZP (FIG. 2 ), and the surface of the plurality of structures 23 becomes positively charged.

FIG. 4 is a schematic diagram showing the dynamics of the processing liquid LQ when the surfaces of the plurality of structures 23 of the substrate W have been charged to a timing. A part of the surface of the substrate W is shown enlarged in FIG. 4.

As shown in FIG. 4, the processing liquid LQ is supplied to the substrate W, and the processing liquid LQ is adhered to the substrate W. The treatment liquid LQ contains a plurality of negative conductive components ECN. On the other hand, the negative charges based on the boundary potential ZP shown in FIG. 2 are cancelled out in the plurality of structures 23, and the surfaces of the plurality of structures 23 are positively charged. Therefore, the polarity of the surface of the structure 23 is opposite to the polarity of the negative conductive component ECN of the treatment liquid LQ. As a result, the negative conductive component ECN is attracted by the positive charge on the surface of the structure 23 and can easily enter the gap GP between the plurality of structures 23. Therefore, a plurality of structures 23 can be efficiently etched by the negative conductive component ECN.

In addition, the structure 23 that is negatively charged by the boundary potential is formed of, for example, silicon, aluminum oxide in an alkaline solution, or silicon oxide.

On the other hand, the surface of each of the plurality of structures 23 of the substrate W may be positively charged by the boundary potential. The structure 23 that is positively charged by the boundary potential is formed of, for example, acidic silicon oxide, aluminum oxide, or silicon nitride. In addition, there may be cases where the treatment liquid LQ contains a plurality of positive conductive components.

In this case, the positive electrode of the power supply device 17 is connected to the first electrode 11 through the wiring LN1. On the other hand, the negative electrode of the power supply device 17 is connected to the second electrode 32 by the wiring LN2. In addition, the power supply device 17 applies a DC voltage between the first electrode 11 and the second electrode 32. Therefore, negative charge is supplied to the substrate W from the negative electrode of the power supply device 17. As a result, the boundary of the surface of the plurality of structures 23 of the substrate W is cancelled out, and the surface of the plurality of structures 23 becomes negatively charged.

When the surface of the plurality of structures 23 is negatively charged, the polarity of the surface of the structure 23 is opposite to the polarity of the positive conductive component of the treatment liquid LQ. As a result, the positive conductive component is attracted by the negative charges on the surface of the structure 23 and can easily enter the gap GP between the plurality of structures 23. Therefore, a plurality of structures 23 can be efficiently etched by the positive conductive component.

Next, the structure 23 of the substrate W will be further described with reference to FIG. 4. It is preferable that the distance L between the adjacent structures 23 among the plurality of structures 23 satisfies the first predetermined condition (hereinafter referred to as "first predetermined condition PC1"). The first predetermined condition PC1 indicates that before the DC voltage is applied between the first electrode 11 and the second electrode 32 by the power supply device 17, the treatment liquid LQ has the same polarity as the electric charge based on the boundary potential of the surface of the structure 23 The conductive component in the metal cannot enter or penetrate into the gap GP between the plurality of structures 23. According to the first embodiment, even in the case where the plural structures 23 are plural ultrafine structures having a narrow distance L that satisfies the first predetermined condition PC1, it is possible to compare the first electrode 11 and the second electrode A direct current voltage is applied between 32 to allow the conductive component of the treatment liquid LQ to enter or penetrate into the gap GP between the plurality of structures 23. As a result, a plurality of structures 23 can be etched efficiently.

In other words, it is preferable that the distance L between adjacent structures 23 among the plurality of structures 23 satisfies the second predetermined condition (hereinafter referred to as "second predetermined condition PC2"). The second predetermined condition PC2 represents: after a direct current voltage is applied between the first electrode 11 and the second electrode 32 by the power supply device 17, the charge on the surface of the structure 23 charged by the direct current voltage is treated with the opposite polarity. The conductive component in the liquid LQ can enter or penetrate into the gap GP between the plurality of structures 23.

In addition, for example, when the distance L is 10 nm or less, the distance L satisfies the first predetermined condition PC1 and the second predetermined condition PC2. However, the application of the present invention is not limited to the case where the distance L satisfies the first predetermined condition PC1 and the second predetermined condition PC2.

As described above with reference to FIGS. 3 and 4, according to the first embodiment, the power supply device 17 applies a DC voltage between the first electrode 11 and the second electrode 32 so that the plurality of structures 23 of the substrate W The polarity of each surface becomes the opposite polarity to the polarity of the treatment liquid LQ (specifically, the polarity of the conductive component of the treatment liquid LQ). Therefore, the conductive component contained in the processing liquid LQ is attracted by the charges on the surface of the structure 23 of the substrate W and can easily enter the gap GP between the plurality of structures 23. As a result, it is possible to efficiently etch a plurality of structures 23 by the conductive component of the processing liquid LQ.

In addition, according to the first embodiment, the power supply device 17 applies a direct current voltage between the first electrode 11 and the second electrode 32 to charge the surface of each of the plurality of structures 23 to offset the damage of each of the plurality of structures 23. The boundary of the surface reaches the potential. Therefore, it is possible to prevent the etching by the treatment liquid LQ from hindering the etching by the potential of the boundary of the surface of the plurality of structures 23.

Next, the operation of the substrate processing apparatus 100 when the negative conductive component is prevented from entering the gap GP between the plurality of structures 23 of the substrate W when the processing liquid LQ contains a negative conductive component will be described with reference to FIGS. 5 and 6. In the description of FIGS. 5 and 6, an example in which the processing liquid LQ is an etching liquid will be described.

5 is a schematic diagram showing the structure of the substrate processing apparatus 100 according to the first embodiment when the surfaces of the plurality of structures 23 of the substrate W are charged negatively. As shown in FIG. 5, the first electrode 11 is in contact with the processing liquid LQ attached to the substrate W. On the other hand, the second electrode 32 is in contact with the substrate W. In addition, the positive electrode of the power supply device 17 is connected to the first electrode 11 by the wiring LN1. On the other hand, the negative electrode of the power supply device 17 is connected to the second electrode 32 by the wiring LN2. In addition, the power supply device 17 applies a DC voltage between the first electrode 11 and the second electrode 32. Therefore, negative charge is supplied to the substrate W from the negative electrode of the power supply device 17. As a result, the surfaces of the plurality of structures 23 become negatively charged.

FIG. 6 is a schematic diagram showing the behavior of the processing liquid LQ when the surfaces of the plurality of structures 23 of the substrate W have been charged negatively. As shown in FIG. 6, the processing liquid LQ is supplied to the substrate W, and the processing liquid LQ is adhered to the substrate W. The treatment liquid LQ contains a plurality of negative conductive components ECN. On the other hand, the surfaces of the plurality of structures 23 are negatively charged. Therefore, the polarity of the surface of the structure 23 is the same as the polarity of the negative conductive component ECN of the treatment liquid LQ. As a result, the negative conductive component ECN is suppressed from entering the gap GP between the plurality of structures 23. As a result, the etching of the plurality of structures 23 by the negative conductive component ECN can be stopped quickly.

In addition, when the processed product PD existing in the gap GP between the plurality of structures 23 is negatively charged, the processed product PD is pushed out from the gap GP by the negative charge on the surface of the plurality of structures 23. As a result, the processed product PD can be quickly discharged from the gap GP. The product PD after the treatment is, for example, a substance produced by the reaction between the negative conductive component ECN of the treatment liquid LQ and the structure 23.

On the other hand, there may be cases where the treatment liquid LQ contains a plurality of positive conductive components. In this case, the negative electrode of the power supply device 17 is connected to the first electrode 11 by the wiring LN1. On the other hand, the positive electrode of the power supply device 17 is connected to the second electrode 32 by the wiring LN2. In addition, the power supply device 17 applies a DC voltage between the first electrode 11 and the second electrode 32. Therefore, a positive charge is supplied to the substrate W from the positive electrode of the power supply device 17. As a result, the surfaces of the plurality of structures 23 become positively charged.

When the surface of the plurality of structures 23 is positively charged, the polarity of the surface of the structure 23 is the same as the polarity of the positive conductive component of the treatment liquid LQ. As a result, it is suppressed that the positive conductive component enters the gap GP between the plurality of structures 23. As a result, the etching of the plurality of structures 23 by the positive conductive component can be quickly stopped.

In addition, when the processed product PD existing in the gap GP between the plurality of structures 23 is positively charged, the processed product PD is pushed out from the gap GP by the positive charge on the surface of the plurality of structures 23. As a result, the processed product PD can be quickly discharged from the gap GP. The product PD after the treatment is, for example, a substance produced by the reaction between the positive conductive component of the treatment liquid LQ and the structure 23.

As described above with reference to FIGS. 5 and 6, according to the first embodiment, the power supply device 17 applies a DC voltage between the first electrode 11 and the second electrode 32 so that the plurality of structures 23 of the substrate W are each The polarity of the surface thereof becomes the same polarity as the polarity of the treatment liquid LQ (specifically, the polarity of the conductive component of the treatment liquid LQ). Therefore, the conductive component contained in the treatment liquid LQ repels the electric charge on the surface of the structure 23, thereby suppressing entry into the gap GP between the plurality of structures 23. As a result, the etching of the plurality of structures 23 by the conductive component of the treatment liquid LQ can be stopped quickly. In addition, the processed product PD existing in the gap GP of the plurality of structures 23 can be quickly discharged from the gap GP.

In addition, in the case where the DC voltage is applied between the first electrode 11 and the second electrode 32 so that the polarity of the surface of each of the plurality of structures 23 of the substrate W becomes the same polarity as the polarity of the processing liquid LQ, the power supply The device 17 may also apply a DC voltage between the first electrode 11 and the second electrode 32 and charge the surface of each of the plurality of structures 23 to cancel the boundary potential of the surface of each of the plurality of structures 23.

Next, the substrate processing method according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 7. The substrate processing apparatus 100 executes a substrate processing method. In the substrate processing method, a substrate W having a pattern PT is processed, and the pattern PT includes a plurality of structures 23. Fig. 7 is a flowchart showing the substrate processing method. As shown in FIG. 7, the substrate processing method includes step S1 to step S15.

As shown in FIGS. 1 and 7, in step S1, the control unit 191 of the substrate processing apparatus 100 controls the transfer robot (not shown) so that the transfer robot carries the substrate W into the substrate processing apparatus 100. As a result, the transfer robot transfers the substrate W to the substrate processing apparatus 100.

Next, in step S2, the control unit 191 controls the plurality of clamp members 31 so that the plurality of clamp members 31 hold the substrate W. As a result, the plurality of clamp members 31 hold the substrate W. In addition, the plurality of jig members 31 are in contact with the substrate W. Step S2 is equivalent to an example of “a step for bringing the second electrode 32 into contact with the substrate W”. The reason for this is that the clamp member 31 functions as the second electrode 32.

Next, in step S3, the control unit 191 controls the rotation motor 7 so that the rotation motor 7 drives the rotation jig 3 and starts rotating the substrate W. As a result, the rotation jig 3 rotates, and the substrate W rotates.

Next, in step S4, the control unit 191 controls the valve V1 and the nozzle moving unit 10 so that the nozzle 9 starts supplying the processing liquid LQ to the substrate W. As a result, the nozzle 9 moves to the processing position and supplies the processing liquid LQ to the substrate W. Specifically, the nozzle 9 supplies the processing liquid LQ to the substrate W throughout the first predetermined period.

Next, in step S5, the control unit 191 controls the valve V1 and the nozzle moving unit 10 so that the nozzle 9 ends the supply of the processing liquid LQ to the substrate W. As a result, the nozzle 9 ends the supply of the processing liquid LQ to the substrate W and moves to the retracted position.

Next, in step S6, the control unit 191 controls the electrode moving unit 13 so that the first electrode 11 contacts the processing liquid LQ attached to the substrate W. As a result, the first electrode 11 is in contact with the processing liquid LQ attached to the substrate W.

Next, in step S7, the control unit 191 controls the power supply device 17 to apply a DC voltage between the first electrode 11 and the second electrode 32 so that the polarity of the plurality of structures 23 of the substrate W becomes the same as that of the processing liquid LQ. Opposite polarity. As a result, the power supply device 17 applies a DC voltage between the first electrode 11 and the second electrode 32 throughout the second predetermined period so that the polarity of the surface of each of the plurality of structures 23 becomes opposite to that of the treatment liquid LQ The polarity. Next, the power supply device 17 stops applying the DC voltage.

Next, in step S8, the control unit 191 switches the polarity of the power supply device 17.

Next, in step S9, the control unit 191 controls the power supply device 17 to apply a DC voltage between the first electrode 11 and the second electrode 32 so that the polarity of the plurality of structures 23 of the substrate W becomes the same as that of the processing liquid LQ. Same polarity. As a result, the power supply device 17 applies a DC voltage between the first electrode 11 and the second electrode 32 throughout the third predetermined period so that the polarity of the surface of each of the plurality of structures 23 of the substrate W becomes equal to that of the processing liquid LQ The polarity is the same as the polarity. Next, the power supply device 17 stops applying the DC voltage.

Next, in step S10, the control unit 191 controls the electrode moving unit 13 so that the first electrode 11 is separated from the processing liquid LQ attached to the substrate W. As a result, the first electrode 11 is separated from the processing liquid LQ and moved to the retracted position.

Next, in step S11, the control unit 191 controls the valve V2 so that the nozzle 15 supplies the cleaning liquid to the substrate W. As a result, the nozzle 15 supplies the cleaning liquid to the substrate W. Specifically, the nozzle 15 supplies the cleaning liquid to the substrate W throughout the fourth predetermined period. As a result, the processing liquid LQ on the substrate W is rinsed by the cleaning liquid, so that the substrate W is cleaned.

Next, in step S12, the control unit 191 controls the rotation motor 7 to accelerate the rotation jig 3 to a high rotation speed and maintain the rotation speed of the rotation jig 3 at the high rotation speed. As a result, the substrate W is rotated at a high rotation speed, and the cleaning liquid adhering to the substrate W is thrown away to dry the substrate W.

Next, in step S13, the control unit 191 controls the autorotating motor 7 so that the autorotating motor 7 stops the autorotating jig 3 to stop rotating the substrate W. As a result, the rotation jig 3 stops and the substrate W is stopped.

Next, in step S14, the control unit 191 controls the plurality of clamp members 31 so that the plurality of clamp members 31 release the holding of the substrate W. As a result, the plurality of clamp members 31 release the holding of the substrate W and release the substrate W.

Next, in step S15, the control unit 191 controls the transfer robot (not shown) so that the transfer robot unloads the substrate W from the substrate processing apparatus 100. As a result, the transfer robot unloads the substrate W from the substrate processing apparatus 100. Then, the processing ends.

As described above with reference to FIG. 7, according to the substrate processing method of the first embodiment, the power supply device 17 applies a DC voltage between the first electrode 11 and the second electrode 32 (step S7 or step S9). Therefore, it is possible to use a plurality of structures 23 constituting the pattern PT of the substrate W to be charged positively or negatively. As a result, it is possible to control the movement of the conductive component of the processing liquid LQ with respect to the gap GP between the plurality of structures 23 constituting the pattern PT of the substrate W.

In addition, in the semiconductor manufacturing method of the first embodiment, a semiconductor substrate W having a pattern PT containing a plurality of structures 23 is processed by a substrate processing method including steps S1 to S15, and a semiconductor substrate W belonging to the processed semiconductor substrate W is manufactured. semiconductor.

In addition, the substrate processing method and the semiconductor manufacturing method should just include at least one of the steps S7 and S9. In this case, step S8 is not necessary. In addition, step S5 can also be performed between step S6 and step S7, between step S7 and step S8, between step S8 and step S9, or between step S9 and step S10 It can also be executed between step S10 and step S11.

In addition, in the first embodiment, although a plurality of jig members 31 function as the "substrate holding portion", the structure of the "substrate holding portion" is not particularly limited as long as the substrate W can be held. For example, the substrate processing apparatus 100 may be provided with a vacuum jig functioning as a "substrate holding part". The vacuum jig holds the substrate W by vacuum suction. In this case, the vacuum clamp system can function as the second electrode 32.

In addition, the substrate processing apparatus 100 may be individually provided with a "substrate holding portion" such as the second electrode 32 and the jig member 31.

[Embodiment 2] Referring to FIG. 8, a substrate processing apparatus 100A according to the second embodiment of the present invention will be described. The main difference between the second embodiment and the first embodiment is that the nozzle 9 functions as the first electrode 11 in the second embodiment. Hereinafter, the difference between the second embodiment and the first embodiment will be mainly explained.

FIG. 8 is a schematic cross-sectional view showing the substrate processing apparatus 100A of the second embodiment. As shown in FIG. 8, in the substrate processing apparatus 100A, the nozzle 9 functions as the first electrode 11. Therefore, compared with the case where the first electrode 11 is provided as a dedicated part, the number of parts can be reduced. The material of the nozzle 9 functioning as the first electrode 11 is, for example, a resin material containing carbon. That is, the material of the nozzle 9 is the same as the material of the first electrode 11 of the first embodiment. By configuring the nozzle 9 in this manner, the conductivity of the nozzle 9 that functions as the first electrode 11 can be secured and the chemical resistance can be improved. In addition, the second embodiment has the same effect as the first embodiment. In addition, the wiring LN1 connects the nozzle 9 and the power supply device 17.

In addition, in the second embodiment, in step S6 shown in FIG. 7, the control unit 191 controls the nozzle moving unit 10 so that the nozzle 9 functioning as the first electrode 11 contacts the processing liquid attached to the substrate W. LQ. As a result, the nozzle 9 functioning as the first electrode 11 comes into contact with the processing liquid LQ attached to the substrate W.

In addition, in step S10, the control unit 191 controls the nozzle moving unit 10 so that the nozzle 9 functioning as the first electrode 11 is separated from the processing liquid LQ attached to the substrate W. As a result, the nozzle 9 functioning as the first electrode 11 is separated from the processing liquid LQ and moved to the retracted position.

The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above-mentioned embodiments, and can be implemented in various forms within the scope of the spirit of the present invention. In addition, the plural constituent elements disclosed in the above-mentioned embodiment may be appropriately changed. For example, one of all the components shown in a certain embodiment may be added to the components of another embodiment, or some of all the components disclosed in a certain embodiment may be added. This component is deleted from the implementation form.

In addition, in order to facilitate the understanding of the present invention, each constituent element is displayed mainly and schematically. The thickness, length, number, interval, etc. of each constituent element in the drawings may also be different from actual ones due to the relationship between the drawings. The situation. In addition, the structure of each component shown in the said embodiment is only an example, and is not specifically limited, As long as it does not substantially deviate from the effect of this invention, various changes can be made. [Industry Availability]

The present invention relates to a substrate processing apparatus, a substrate processing method, and a semiconductor manufacturing method, and has industrial applicability.

1: chamber 3: Rotation fixture 5: Rotation axis 5a: Internal space 7: Rotating motor 9: Nozzle (processing liquid supply part) 10: Nozzle moving part 11: First electrode 13: Electrode moving part 15: Nozzle 16: protective cover 17: Power supply unit (power supply section) 19: Control device 21: Substrate body 21a: surface 23: Structure 31: Jig member (board holding part) 32: second electrode 33: Rotation base 100, 100A: Substrate processing equipment 111,131: arm 113, 133: axis of rotation 115: nozzle moving mechanism 135: Electrode moving mechanism 191: Control Department 193: Memory Department AX: axis of rotation D: predetermined direction ECN: negative conductive component GP: gap L: distance LN1, LN2: Wiring LQ: Treatment liquid P1, P2: Piping PD: product after treatment PT: Pattern V1, V2: Valve W: substrate ZP: boundary potential

[FIG. 1] A schematic cross-sectional view showing a substrate processing apparatus according to Embodiment 1 of the present invention. Fig. 2 is a schematic diagram showing the dynamics of the processing liquid attached to the substrate W in a general substrate processing apparatus. Fig. 3 is a schematic diagram showing the structure of the substrate processing apparatus of the first embodiment when the surfaces of a plurality of structures constituting a pattern of the substrate are charged to be plus. Fig. 4 is a schematic diagram showing the behavior of the processing liquid when the substrate processing apparatus of the first embodiment has charged the surfaces of a plurality of structures of the substrate to a timing. Fig. 5 is a schematic diagram showing the structure of the substrate processing apparatus according to the first embodiment when the surface of a plurality of structures constituting the pattern of the substrate is charged to minus. Fig. 6 is a schematic diagram showing the behavior of the processing liquid when the substrate processing apparatus of the first embodiment has charged negatively the surfaces of a plurality of structures of the substrate. [Fig. 7] A flowchart showing the substrate processing method of the first embodiment. [Fig. 8] A schematic cross-sectional view showing a substrate processing apparatus according to Embodiment 2 of the present invention.

3: Rotation fixture

5: Rotation axis

11: First electrode

17: Power supply unit (power supply section)

31: Jig member (board holding part)

32: second electrode

33: Rotation base

100: Substrate processing device

LN1, LN2: Wiring

LQ: Treatment liquid

W: substrate

Claims (15)

A substrate processing device for processing a substrate with a pattern, the pattern including a plurality of structures; The aforementioned substrate processing device is equipped with: The processing liquid supply part supplies conductive processing liquid to the aforementioned substrate; The first electrode is in contact with the processing solution that has been attached to the substrate; The second electrode is in contact with the aforementioned substrate; and The power supply unit applies a DC voltage between the first electrode and the second electrode. The substrate processing apparatus according to claim 1, wherein the power supply section applies the DC voltage between the first electrode and the second electrode so that the polarity of the surface of each of the plurality of structures becomes the same as that of the processing The polarity of the liquid is the opposite polarity. The substrate processing apparatus according to claim 1, wherein the power supply section applies the DC voltage between the first electrode and the second electrode so that the polarity of the surface of each of the plurality of structures becomes the same as that of the processing The polarity of the liquid is the same polarity. The substrate processing apparatus according to any one of claims 1 to 3, wherein the power supply unit applies the DC voltage between the first electrode and the second electrode and charges the surface of each of the plurality of structures , In order to offset the boundary potential of each of the multiple aforementioned structures. The substrate processing apparatus according to any one of claims 1 to 3, wherein the processing liquid supply unit functions as the first electrode. The substrate processing apparatus according to any one of claims 1 to 3, which further includes a substrate holding portion for holding the aforementioned substrate; The substrate holding portion functions as the second electrode. The substrate processing apparatus according to any one of claims 1 to 3, wherein the material of at least one of the material of the first electrode and the material of the second electrode is a resin material containing carbon. A substrate processing method is used to process a substrate with a pattern, the pattern including a plurality of structures; The aforementioned substrate processing method has: The process of supplying a conductive treatment liquid to the aforementioned substrate; The step of bringing the first electrode into contact with the treatment solution that has been attached to the substrate; The step of bringing the second electrode into contact with the aforementioned substrate; and The step of applying a DC voltage between the first electrode and the second electrode. The substrate processing method according to claim 8, wherein in the step for applying the direct current voltage, the direct current voltage is applied between the first electrode and the second electrode so that each of the plurality of structures is The polarity of the surface becomes opposite to the polarity of the aforementioned treatment liquid. The substrate processing method according to claim 8, wherein in the step for applying the direct current voltage, the direct current voltage is applied between the first electrode and the second electrode so that each of the plurality of structures is The polarity of the surface becomes the same polarity as that of the aforementioned treatment liquid. The substrate processing method according to any one of claims 8 to 10, wherein in the step for applying the DC voltage, the DC voltage is applied between the first electrode and the second electrode and a plurality of The surface of each of the aforementioned structures is charged so as to cancel the boundary potential of the surface of each of the plural aforementioned structures. The substrate processing method according to any one of claims 8 to 10, wherein in the step for supplying the processing liquid to the substrate, the processing liquid supply unit supplies the processing liquid to the substrate; In the step for bringing the first electrode into contact, the processing liquid supply unit functions as the first electrode. The substrate processing method according to any one of claims 8 to 10, wherein in the step for bringing the second electrode into contact, a substrate holding portion for holding the substrate functions as the second electrode. The substrate processing method according to any one of claims 8 to 10, wherein the material of at least one of the material of the first electrode and the material of the second electrode is a resin material containing carbon. A semiconductor manufacturing method for processing a semiconductor substrate with a pattern containing a plurality of structures and manufacturing a semiconductor belonging to the processed semiconductor substrate; The aforementioned semiconductor manufacturing method has: The process of supplying a conductive treatment liquid to the aforementioned semiconductor substrate; A step of bringing the first electrode into contact with the processing solution that has been attached to the semiconductor substrate; The step of making the second electrode system contact the aforementioned semiconductor substrate; and The step of applying a DC voltage between the first electrode and the second electrode.

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