CN107316795A - A kind of focusing ring and plasma processing apparatus - Google Patents
A kind of focusing ring and plasma processing apparatus Download PDFInfo
- Publication number
- CN107316795A CN107316795A CN201610264269.XA CN201610264269A CN107316795A CN 107316795 A CN107316795 A CN 107316795A CN 201610264269 A CN201610264269 A CN 201610264269A CN 107316795 A CN107316795 A CN 107316795A
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- China
- Prior art keywords
- annular step
- substrate
- step surface
- focusing ring
- base station
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
Abstract
The present invention provides a kind of focusing ring and plasma processing apparatus.The focusing collar is located in processing chamber housing on the outside of for the base station of carrying substrates, including first annular step face and the second annular step surface, first annular step face and the second annular step surface are respectively positioned on the side towards substrate of focusing ring, second annular step surface is located at the inner side in first annular step face, and less than first annular step face, concaveconvex structure is provided with the second annular step surface.The focusing ring can reduce absorption of the polymer being deposited in processing procedure between substrate back edge and the second annular step surface to substrate back, reduce substrate and the occurrence probability of polymer adhesion, so as to increase the stability of substrate transfer, it is to avoid substrate occur and crush；Attachment of polymers is also avoided that at the back side of substrate simultaneously, so as to avoid substrate from being polluted in transmitting procedure to Transmission system, while also avoiding substrate from being polluted during handling process to handling process.
Description
Technical field
The present invention relates to plasma treatment technique field, in particular it relates to which a kind of focus on
Ring and plasma processing apparatus.
Background technology
Plasma apparatus is widely used in the system of integrated circuit (IC) or MEMS
Make in technique.Contain substantial amounts of electronics, ion, excitation state in the plasma of this system
Atom, molecule and free radical isoreactivity particle, these active particles and substrate phase interaction
With making material surface occur various physical and chemical reactions, so that material surface performance
Changed.
Perform etching the schematic diagram of technique in plasma chamber room for chip as shown in Figure 1.
As shown in Fig. 2 process of the electrostatic chuck 4 (ESC) in corona treatment chip 5
In, chip 5 is fixed using the principle of Electrostatic Absorption.Lower electrode arrangement is (i.e.
Abutment structure) in focusing ring 6 be located at electrostatic chuck 4 around, its main function have with
Lower 2 points, one be chip 5 is carried out it is spacing, it is ensured that the phase of chip 5 and electrostatic chuck 4
To position in an accurate relative position, it is ensured that electrostatic chuck 4 is to chip 5
Absorption fix；Two be to carry out part to being distributed in the plasma of the marginal portion of chip 5
Control, it is ensured that the uniformity of the etching edge of chip 5.
The flow chart that chip is transferred into and out reaction chamber is illustrated in figure 3, in etching work
Electrostatic chuck supply applies backward voltage to electrode after the completion of skill, by sensing on chip
Go out the electric charge with chip charged opposed polarity itself to be neutralized, complete electrostatic and release
Put；As shown in figure 4, after Electro-static Driven Comb is completed, pin is driven by up-down mechanism 7
8 (pin) are risen, and chip 5 is caught reaction chamber by vacuum hand.
As shown in Figure 5 and Figure 6, the front of traditional focusing ring is by the He of terrace 61 of appearing on the stage
The circular step surface composition of leave from office terrace 62 two.Wherein, the platform of focusing ring inner ring
Terrace is more slightly lower than the upper surface of electrostatic chuck, the purpose so designed be can allow chip by
The suction-operated of electrostatic chuck and the electrostatic chuck upper surface back of the body blow the pressure effect of helium, and
And keep balance to fix under two kinds of active forces.The annulus external diameter of the leave from office terrace of focusing ring
Size is more slightly larger than chip, and the purpose being arranged such is that the position of chip is controlled, and protects
Card chip falls to ensure that the accuracy of relative position at electrostatic chuck upper surface, and really
Protect chip and do not occur lateral sliding.
During plasma etch process, as shown in Figure 7.Due to atomic group 9
The directionality of motion is poor, causes some atomic groups 9 can be with the poly- of the edge of electrostatic chuck 4
Burnt ring 6 produces collision, so that part of atoms group 9 is in the dorsal edge of chip 5 and poly-
It is enriched between the burnt leave from office terrace 62 of ring 6, produces some polymer 10.
These polymer formed in the back side of chip 5 and the leave from office terrace 62 of focusing ring 6
10 can produce certain suction-operated to chip 5.As shown in figure 8, when chip 5 enters
When having gone technique by pin 8 (pin) jack-up, the phenomenon while tilting can occur for chip 5,
Even occur that bonding die or the drift condition of chip 5 occur, cause chip 5 not pass normally
Go out.The presence of this bonding die phenomenon is more dangerous hidden danger, especially in automated production
In, because liter pin and vacuum arm stretch into pulldown for sequence, bonding die can cause chip
5 scratch with manipulator, cause manipulator to occur arm damage or even chip occurs
5 broken serious conditions.On the other hand, some polymer 10 are had and are adhered to crystalline substance
The back side of piece 5, these polymer 10 can be during chip 5 be passed back to transmission
Manipulator, transmission chamber, the box of placement chip 5 cause certain pollution, also can be right
Follow-up technological process produces certain pollution.
The content of the invention
The present invention is focused on for above-mentioned technical problem present in prior art there is provided one kind
Ring and plasma processing apparatus.The focusing ring can reduce the second annular step surface and base
The contact surface at the piece back side, substrate back edge and are deposited on so as to reduce in processing procedure
Absorption of the polymer to substrate back between second ring step surface, reduction substrate is with polymerizeing
The occurrence probability of thing adhesion, and then increase the stability of substrate transfer, it is to avoid there is substrate
It is broken；Attachment of polymers is also avoided that at the back side of substrate simultaneously, so as to avoid substrate from existing
Transmission system is polluted in transmitting procedure, while also avoiding substrate in handling process mistake
Handling process is polluted in journey.
The present invention provides a kind of focusing ring, encloses and sets in the processing chamber for carrying substrates
On the outside of base station, including first annular step face and the second annular step surface, first ring
Shape step surface and second annular step surface be respectively positioned on the focusing ring towards described
The side of substrate, second annular step surface is located at the interior of the first annular step face
Side, and less than the first annular step face, be provided with second annular step surface
Concaveconvex structure.
Preferably, the concaveconvex structure includes being arranged in second annular step surface
Depressed part and lug boss, the depressed part and the lug boss are interspersed successively.
Preferably, the depressed part and the lug boss are uniformly distributed.
Preferably, area occupied of the depressed part in second annular step surface with
The ratio of area occupied of the lug boss in second annular step surface is more than
1:1 and less than 20:1.
Preferably, vertical section shape of the depressed part along second annular step surface circumference
Shape includes rectangle, semicircle, trapezoidal, square or del；
The lug boss includes along the circumferential vertical section shape of second annular step surface
Rectangle, semicircle, trapezoidal, square or del.
Preferably, second annular step surface and the first annular step face parallel to
The loading end of the carrying substrate of the base station, and second annular step surface is less than
The loading end of the base station.
Preferably, the center of second annular step surface and the center weight of the base station
Close, the external diameter of second annular step surface is more than the diameter of the substrate.
Preferably, the first annular step face is higher than the loading end of the base station.
Preferably, the material of the focusing ring is identical with the material of the substrate.
The present invention also provides a kind of plasma processing apparatus, including above-mentioned focusing ring.
Beneficial effects of the present invention：Focusing ring provided by the present invention, by the second ring
Concaveconvex structure is set on shape step surface, the second annular step surface and substrate back can be reduced
Contact surface so that reduce be deposited in processing procedure substrate back edge and second annular
Absorption of the polymer to substrate back between step surface, reduction substrate and polymer adhesion
Occurrence probability, and then increase substrate transfer stability, it is to avoid occur substrate crush；
Attachment of polymers is also avoided that at the back side of substrate simultaneously, so as to avoid substrate from being transmitted across
Transmission system is polluted in journey, while also avoiding substrate right during handling process
Handling process is polluted.
Plasma processing apparatus provided by the present invention, by using above-mentioned focusing ring,
Avoid in processing procedure because polymer adhesion substrate is to the plasma processing apparatus
Transmission system and the process system pollution and damage that cause, so as to improve the plasma
The processing quality of body processing unit.
Brief description of the drawings
Fig. 1 is the structural representation in plasma etch chamber room in the prior art；
Fig. 2 is the structure sectional view of focusing ring set location in Fig. 1；
Fig. 3 is transferred into and out the flow chart of reaction chamber for chip in Fig. 1；
Fig. 4 is after chip discharges from electrostatic chuck in Fig. 1, and up-down mechanism is by crystalline substance
The schematic diagram of piece jack-up；
Fig. 5 is the structure top view of focusing ring in Fig. 2；
Fig. 6 is the structure sectional view of focusing ring in Fig. 2；
Fig. 7 is in plasma etch process, atomic group is in chip back surface edge and focusing
Aggregation forms the schematic diagram of polymer between ring leave from office terrace；
Fig. 8 be chip by up-down mechanism jack-up when, due to by polymer adhesion
Occur while the schematic diagram tilted；
Fig. 9 is the structure top view of focusing ring in the embodiment of the present invention 1；
Figure 10 is the structure top view after the second annular step surface partial enlargement in Fig. 9；
Figure 11 is structure sectional view of the focusing ring at a depressed part in Fig. 9；
Figure 12 is interspersed for depressed part in the second annular step surface in Fig. 9 with lug boss
Structure sectional view；
Figure 13 is the structure sectional view of focusing ring set location in Fig. 9.
Description of reference numerals therein：
1. base station；11. loading end；12. substrate；2. first annular step face；3. second
Annular step surface；31. concaveconvex structure；310. depressed part；311. lug boss；4. electrostatic
Chuck；5. chip；6. focusing ring；61. terrace of appearing on the stage；62. leave from office terrace；7. about
Motion；8. pin；9. atomic group；10. polymer.
Embodiment
To make those skilled in the art more fully understand technical scheme, below
With reference to the drawings and specific embodiments to a kind of focusing ring provided by the present invention and wait from
Daughter processing unit is described in further detail.
Embodiment 1：
The present embodiment provides a kind of focusing ring, as Figure 9-Figure 11, encloses and is located at processing
The outside of base station 1 in chamber for carrying substrates, including first annular step face 2 and the
Second ring step surface 3, the annular step surface 3 of first annular step face 2 and second is respectively positioned on
The side towards substrate of focusing ring, the second annular step surface 3 is located at first annular step
The inner side in face 2, and less than first annular step face 2, set in the second annular step surface 3
It is equipped with concaveconvex structure 31.
By setting concaveconvex structure 31 in the second annular step surface 3, the can be reduced
The contact surface of second ring step surface 3 and substrate back, is deposited so as to reduce in processing procedure
Polymer between substrate back edge and the second annular step surface 3 is to substrate back
Absorption, the occurrence probability of reduction substrate and polymer adhesion, and then increase substrate transfer
Stability, it is to avoid occur substrate crush；Also it is avoided that attachment of polymers in substrate simultaneously
The back side, so as to avoid substrate from being polluted in transmitting procedure to Transmission system, simultaneously
Also substrate is avoided to be polluted during handling process to handling process.
In the present embodiment, as shown in Figure 10, concaveconvex structure 31 includes being arranged on the second ring
Depressed part 310 and lug boss 311 on shape step surface 3, depressed part 310 and lug boss
311 are interspersed successively.The setting of depressed part 310, can make to be deposited in processing procedure
Polymer overwhelming majority aggregation between substrate back edge and the second annular step surface 3
In depressed part 310, so as to reduce the second annular step surface 3 and substrate back edge
Contact area, and then reduce absorption of the polymer to substrate back.
In the present embodiment, depressed part 310 and lug boss 311 are uniformly distributed.It is arranged such,
The electric fields uniform distribution of the fringe region of base station 1 can be applied to, so that in processing procedure
The plasma in correspondence substrate edge region is evenly distributed, and then ensures substrate edge region
The uniformity of processing.
In the present embodiment, as shown in figure 12, depressed part 310 is in the second annular step surface
Area occupied and area occupied of the lug boss 311 in the second annular step surface 3 on 3
Ratio be more than 1:1 and less than 20:1.I.e. the area occupied of depressed part 310 is more than convex
The area occupied in portion 311 is played, is arranged such, can make to be deposited on substrate in processing procedure
The polymer overwhelming majority between 12 dorsal edges and the second annular step surface 3 is gathered in
In depressed part 310, and only fraction is gathered in the surface of lug boss 311, i.e., only poly-
Collect the fraction polymer on the surface of lug boss 311 to be in contact with the dorsal edge of substrate 12,
And it is gathered in most polymer in depressed part 310 and the dorsal edge of substrate 12 not
It is in contact, so as to reduce connecing for the second annular step surface 3 and the dorsal edge of substrate 12
Contacting surface is accumulated, and then reduces absorption of the polymer to the back side of substrate 12.
In the present embodiment, vertical section of the depressed part 310 along the circumference of the second annular step surface 3
It is shaped as rectangle, vertical section shape of the lug boss 311 along the circumference of the second annular step surface 3
Also it is rectangle, i.e. the shape of depressed part 310 and lug boss 311 is rectangle.
It should be noted that rip cutting of the depressed part 310 along the circumference of the second annular step surface 3
Face shape can also be the other shapes such as semicircle, trapezoidal, square or del；
Lug boss 311 can also be semicircle along the circumferential vertical section shape of the second annular step surface 3
The other shapes such as shape, trapezoidal, square or del, to depressed part 310 and projection
The concrete shape in portion 311 is not limited, as long as can ensure that the fovea superior of the second annular step surface 3
Fall into portion 310 and lug boss 311 is uniformly distributed.
In the present embodiment, as shown in figure 13, the second annular step surface 3 and first annular
Step surface 2 parallel to the carrying substrates 12 of base station 1 loading end 11, and second annular
Step surface 3 is less than the loading end 11 of base station 1.It is arranged such, makes the focusing ring be in integrally
Annular groove-shaped, the second step face 3 in first annular step face 2, energy are less than by height
The substrate 12 being opposite on the loading end 11 of base station 1 plays position restriction effect, makes substrate
12 set location on base station 1 is limited in the area of the second annular step surface 3 delineation
In domain, so that the relative position of substrate 12 and base station 1 is more accurate, so as to base station
1 loading end 11 is treated being fixedly secured in journey to substrate 12, while can also be true
Lateral sliding will not be occurred by protecting substrate 12.In addition, the height of the second annular step surface 3
Slightly below the loading end 11 of base station 1, is arranged such, and substrate 12 can be made to be held with base station 1
Section 11 is fitted, so that the loading end 11 of base station 1 carries out absorption fixation to substrate 12,
Ensure the stability of substrate 12 in processing procedure.
In the present embodiment, the external diameter of the second annular step surface 3 is more than the diameter of substrate 12.
In actual design, the external diameter of the second annular step surface 3 is slightly larger than the diameter of substrate 12,
Set location of the substrate 12 on base station 1 can be so controlled well, protected
The accuracy for the relative position that card substrate 12 is placed on the loading end 11 of base station 1.
In the present embodiment, first annular step face 2 is higher than the loading end 11 of base station 1.
It is arranged such, the focusing ring of overall channel-shaped in a ring can be made to be formed on the periphery of base station 1 and enclosed
Column, focusing ring fence to form certain maintenance work to being uniformly distributed for the fringe field of base station 1
With so that in processing procedure, the plasma distribution of the fringe region of substrate 12 is kept
Uniformly, so ensure that substrate 12 handle uniformity.
In the present embodiment, the material of focusing ring is identical with the material of substrate 12.As focused on
Ring uses quartz material with substrate 12, is arranged such, makes the setting of focusing ring will not
Impurity is introduced in the processing procedure of substrate 12, so as to ensure that the quality of handling process.
The beneficial effect of embodiment 1：The focusing ring provided in embodiment 1, by
Concaveconvex structure is set on second ring step surface, the second annular step surface and substrate can be reduced
The contact surface at the back side, substrate back edge and second are deposited on so as to reduce in processing procedure
Absorption of the polymer to substrate back between annular step surface, reduction substrate and polymer
The occurrence probability of adhesion, and then increase the stability of substrate transfer, it is to avoid there is substrate and break
It is broken；Attachment of polymers is also avoided that at the back side of substrate simultaneously, so as to avoid substrate in biography
Transmission system is polluted during defeated, while also avoiding substrate in handling process process
In handling process is polluted.
Embodiment 2：
The present embodiment provides a kind of plasma processing apparatus, including poly- in embodiment 1
Jiao Huan.Plasma processing apparatus in the present embodiment includes plasma etching apparatus.
By using the focusing ring in embodiment 1, it is to avoid due to polymerization in processing procedure
Thing adhesion substrate is caused to the Transmission system and process system of the plasma processing apparatus
Pollution and damage, so as to improve the processing quality of the plasma processing apparatus.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present
And the illustrative embodiments used, but the invention is not limited in this.For ability
For those of ordinary skill in domain, the situation of spirit and substance of the present invention is not being departed from
Under, various changes and modifications can be made therein, and these variations and modifications are also considered as the present invention's
Protection domain.
Claims (10)
1. a kind of focusing ring, enclose to set is used for outside the base station of carrying substrates in the processing chamber
Side, including first annular step face and the second annular step surface, the first annular step
Face and second annular step surface be respectively positioned on the focusing ring towards the substrate
Side, second annular step surface is located at the inner side in the first annular step face, and
Less than the first annular step face, it is characterised in that in second annular step surface
It is provided with concaveconvex structure.
2. focusing ring according to claim 1, it is characterised in that the bumps
Structure includes the depressed part and lug boss being arranged in second annular step surface, described
Depressed part and the lug boss are interspersed successively.
3. focusing ring according to claim 2, it is characterised in that the depression
Portion and the lug boss are uniformly distributed.
4. focusing ring according to claim 2, it is characterised in that the depression
Area occupied of the portion in second annular step surface and the lug boss are described the
The ratio of area occupied on second ring step surface is more than 1:1 and less than 20:1.
5. focusing ring according to claim 2, it is characterised in that the depression
Portion along the circumferential vertical section shape of second annular step surface include rectangle, semicircle,
Trapezoidal, square or del；
The lug boss includes along the circumferential vertical section shape of second annular step surface
Rectangle, semicircle, trapezoidal, square or del.
6. focusing ring according to claim 1, it is characterised in that described second
Annular step surface and the first annular step face are parallel to described in the carrying of the base station
The loading end of substrate, and second annular step surface is less than the loading end of the base station.
7. focusing ring according to claim 6, it is characterised in that described second
The external diameter of annular step surface is more than the diameter of the substrate.
8. focusing ring according to claim 6, it is characterised in that described first
Annular step surface is higher than the loading end of the base station.
9. focusing ring according to claim 1, it is characterised in that the focusing
The material of ring is identical with the material of the substrate.
10. a kind of plasma processing apparatus, it is characterised in that including claim
Focusing ring described in 1-9 any one.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610264269.XA CN107316795B (en) | 2016-04-26 | 2016-04-26 | Focusing ring and plasma processing device |
| PCT/CN2017/072324 WO2017185842A1 (en) | 2016-04-26 | 2017-01-24 | Focusing ring and plasma treatment device |
| TW106102644A TWI646573B (en) | 2016-04-26 | 2017-01-24 | Focusing ring and plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610264269.XA CN107316795B (en) | 2016-04-26 | 2016-04-26 | Focusing ring and plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107316795A true CN107316795A (en) | 2017-11-03 |
| CN107316795B CN107316795B (en) | 2020-01-03 |
Family
ID=60161809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610264269.XA Active CN107316795B (en) | 2016-04-26 | 2016-04-26 | Focusing ring and plasma processing device |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN107316795B (en) |
| TW (1) | TWI646573B (en) |
| WO (1) | WO2017185842A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113205991A (en) * | 2021-04-09 | 2021-08-03 | 华虹半导体(无锡)有限公司 | Focusing ring |
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|---|---|---|---|---|
| CN1373899A (en) * | 1999-06-30 | 2002-10-09 | 兰姆研究有限公司 | Techniques for improving etch rate uniformity |
| CN1779921A (en) * | 2004-11-17 | 2006-05-31 | 上海华虹Nec电子有限公司 | Internal focusing ring for etching plasma |
| CN101625958A (en) * | 2008-07-09 | 2010-01-13 | 世界先进积体电路股份有限公司 | Semiconductor process unit and focusing ring thereof |
| CN202405228U (en) * | 2012-01-20 | 2012-08-29 | 中微半导体设备(上海)有限公司 | Focusing ring for plasma processing device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI375270B (en) * | 2008-06-30 | 2012-10-21 | Vanguard Int Semiconduct Corp | Semiconductor manufacturing apparatuses and focus rings thereof |
| CN102522305B (en) * | 2011-12-27 | 2015-01-07 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and focus ring assembly |
| JP6400273B2 (en) * | 2013-03-11 | 2018-10-03 | 新光電気工業株式会社 | Electrostatic chuck device |
| CN103247507A (en) * | 2013-04-08 | 2013-08-14 | 上海华力微电子有限公司 | Compound plasma focusing ring and method for replacing same |
| JP6689020B2 (en) * | 2013-08-21 | 2020-04-28 | 東京エレクトロン株式会社 | Plasma processing device |
| JP2015115421A (en) * | 2013-12-10 | 2015-06-22 | 東京エレクトロン株式会社 | Plasma processing apparatus and focus ring |
| CN104752138B (en) * | 2013-12-27 | 2017-03-15 | 宁波江丰电子材料股份有限公司 | Focusing ring and the sputterer of application focusing ring |
-
2016
- 2016-04-26 CN CN201610264269.XA patent/CN107316795B/en active Active
-
2017
- 2017-01-24 TW TW106102644A patent/TWI646573B/en active
- 2017-01-24 WO PCT/CN2017/072324 patent/WO2017185842A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1373899A (en) * | 1999-06-30 | 2002-10-09 | 兰姆研究有限公司 | Techniques for improving etch rate uniformity |
| CN1779921A (en) * | 2004-11-17 | 2006-05-31 | 上海华虹Nec电子有限公司 | Internal focusing ring for etching plasma |
| CN101625958A (en) * | 2008-07-09 | 2010-01-13 | 世界先进积体电路股份有限公司 | Semiconductor process unit and focusing ring thereof |
| CN202405228U (en) * | 2012-01-20 | 2012-08-29 | 中微半导体设备(上海)有限公司 | Focusing ring for plasma processing device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113205991A (en) * | 2021-04-09 | 2021-08-03 | 华虹半导体(无锡)有限公司 | Focusing ring |
| CN113205991B (en) * | 2021-04-09 | 2022-09-20 | 华虹半导体(无锡)有限公司 | Focusing ring |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017185842A1 (en) | 2017-11-02 |
| CN107316795B (en) | 2020-01-03 |
| TW201805991A (en) | 2018-02-16 |
| TWI646573B (en) | 2019-01-01 |
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