WO2014024347A1 - Source de lumière infrarouge - Google Patents

Source de lumière infrarouge Download PDF

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Publication number
WO2014024347A1
WO2014024347A1 PCT/JP2013/002232 JP2013002232W WO2014024347A1 WO 2014024347 A1 WO2014024347 A1 WO 2014024347A1 JP 2013002232 W JP2013002232 W JP 2013002232W WO 2014024347 A1 WO2014024347 A1 WO 2014024347A1
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Prior art keywords
substrate
layer
insulating layer
light source
infrared
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PCT/JP2013/002232
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English (en)
Japanese (ja)
Inventor
植田　充彦
角　貞幸
辻　幸司
酒井　孝昌
吉原　孝明
桐原　昌男
吉祥 永谷
弘貴 松浪
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パナソニック株式会社
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Publication of WO2014024347A1 publication Critical patent/WO2014024347A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01K—ELECTRIC INCANDESCENT LAMPS
    • H01K1/00—Details
    • H01K1/02—Incandescent bodies
    • H01K1/04—Incandescent bodies characterised by the material thereof
    • H01K1/08—Metallic bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01K—ELECTRIC INCANDESCENT LAMPS
    • H01K1/00—Details
    • H01K1/02—Incandescent bodies
    • H01K1/04—Incandescent bodies characterised by the material thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01K—ELECTRIC INCANDESCENT LAMPS
    • H01K1/00—Details
    • H01K1/28—Envelopes; Vessels
    • H01K1/32—Envelopes; Vessels provided with coatings on the walls; Vessels or coatings thereon characterised by the material thereof
    • H01K1/325—Reflecting coating

Definitions

  • the present invention relates to an infrared light source.
  • an infrared light source including an infrared radiation element, a package in which the infrared radiation element is housed, and a window disposed in front of the infrared radiation element in the package is known (for example, Japanese Patent Publication No. 2000-236110 (hereinafter referred to as “Document 1”).
  • Document 1 describes an infrared radiator having the configuration shown in FIG. 4 as a conventional example of this type of infrared light source.
  • This infrared radiator includes an infrared radiation element 110 having a microbridge structure, a case substrate 120 on which the infrared radiation element 110 is mounted, a cylindrical case 125, and a window 126 that covers the upper surface of the cylindrical case 125.
  • the infrared radiator includes lead terminals 121 and 122 that pass through the case substrate 120 and are fixed to the case substrate 120.
  • the electrodes 114 and 115 of the infrared radiation element 110 and the lead terminals 121 and 122 are connected by gold wires 123 and 124, respectively.
  • an infrared radiation element 130 including an element substrate 131 and a reinforcing substrate 143 is proposed.
  • the element substrate 131 is made of n-type silicon.
  • the reinforcing substrate 143 is made of alumina or sapphire.
  • the element substrate 131 has a hole 132 penetrating from one surface (first surface) 131a side to the opposite surface (second surface) 131b side.
  • the infrared radiation element 130 has a heat generating portion 133 a on the one surface 131 a side of the element substrate 131.
  • the heat generating portion 133 a is formed in a bridge shape that crosses the center of the opening surface of the hole 132.
  • the infrared radiation element 130 is provided with a reflection film 144 having a high reflectance with respect to infrared rays on a portion of the upper surface 143a of the reinforcing substrate 143 that forms the bottom of the hole 132 of the element substrate 131.
  • a reflection film 144 having a high reflectance with respect to infrared rays on a portion of the upper surface 143a of the reinforcing substrate 143 that forms the bottom of the hole 132 of the element substrate 131.
  • Document 1 describes that the heat generating portion 133a is covered with the frame body and the cover on the one surface 131a side of the element substrate 131, so that the heat generating portion 133a is not deteriorated due to dirt or the like, and the reliability is improved. ing.
  • the reflective film 144 is formed on the upper surface 143a of the reinforcing substrate 143 fixed to the opposite surface 131b side of the element substrate 131. For this reason, in the infrared radiation element 130 described above, there is a concern that the infrared light reflected by the reflective film 144 enters the inner side surface 134 of the hole 132 of the element substrate 131 and is reflected or absorbed by the element substrate 131. .
  • the present invention has been made in view of the above reasons, and an object thereof is to provide an infrared light source capable of improving the infrared radiation efficiency.
  • An infrared light source of the present invention includes an infrared radiation element, a package in which the infrared radiation element is housed, and a window hole on one surface side of the infrared radiation element in the package, and the infrared radiation emitted from the infrared radiation element is transmitted. And a reflecting element that reflects infrared rays radiated from the infrared radiating element to the side opposite to the one surface side.
  • the infrared radiating element includes a first substrate and one surface side of the first substrate.
  • the first substrate is formed with a through hole exposing a surface of the first insulating layer opposite to the heating element layer side, and the second insulating layer is formed of the window material. Opposite the window hole through the second
  • the edge layer and the first insulating layer are formed of a material transparent to infrared rays emitted from the heating element layer, and the reflective element is provided on the second substrate and one surface side of the second substrate.
  • a reflective film that reflects infrared radiation emitted from the heating element layer, and the reflective film is disposed in the through hole with the reflective film side as the first insulating layer side.
  • the second substrate is preferably made of a silicon substrate.
  • the reflective film is preferably one metal film selected from the group consisting of an Au film, an Al film, an Al—Si film, and an Al—Cu film.
  • the package includes a base body to which both the infrared radiation element and the reflection element are joined, and a lid having the window hole, and the infrared radiation element is made of a first die bond material.
  • the reflective element is bonded to the substrate via a second bonding portion made of a second die bond material, and the first die bond material and the second die bond material are bonded to the substrate via one bonding portion. The same material is preferred.
  • the infrared radiation element and the reflection element are arranged on the same plane in the base.
  • the thickness dimension of the reflective element is preferably smaller than the thickness dimension of the first substrate.
  • the heating element layer preferably has a rectangular planar shape.
  • the planar size of the heating element layer is preferably set smaller than the planar size of the surface facing the through hole in the first insulating layer.
  • the opening shape of the through hole is preferably rectangular.
  • the through hole is closer to the second surface side, which is the opposite surface of the first substrate, than the first surface side, which is the one surface of the first substrate. It is preferable that the opening area is formed in a large shape.
  • the through hole is preferably formed in a shape in which the opening area gradually increases as the distance from the first insulating layer increases.
  • the window member has a stepped portion positioned on an inner peripheral surface and a peripheral portion of the window hole.
  • infrared radiation efficiency can be improved.
  • FIG. 3A is a schematic plan view of an infrared radiation element in the infrared light source of the embodiment
  • FIG. 3B is a schematic cross-sectional view along AA in FIG. 3A.
  • FIG. 6 is a sectional view taken along line BB of FIG.
  • the infrared light source 100 of the present embodiment will be described with reference to FIGS.
  • the infrared light source 100 includes an infrared radiation element 1, a package 10 in which the infrared radiation element 1 is housed, and an infrared radiation emitted from the infrared radiation element 1 by closing a window hole 25 a on the one surface 11 side of the infrared radiation element 1 in the package 10. And a window member 26 that transmits (infrared light).
  • the infrared light source 100 includes a reflective element 40 that reflects infrared radiation emitted from the infrared radiation element 1 to the side opposite to the one surface 11 side.
  • the infrared radiation element 1 includes a first substrate 2, a first insulating layer 3 formed on one surface (first surface) 2 b side of the first substrate 2, and a heating element layer 4 stacked on the first insulating layer 3. And two pads 91 and 92 electrically connected to the heating element layer 4 and a second insulating layer 5 laminated on the heating element layer 4. In FIG. 3A, the second insulating layer 5 is not shown.
  • the first substrate 2 has a through hole 2a that exposes the surface 33 of the first insulating layer 3 opposite to the heating element layer 4 side.
  • the second insulating layer 5 faces the window hole 25a through the window material 26.
  • the second insulating layer 5 and the first insulating layer 3 are made of a material that is transparent to infrared rays emitted from the heating element layer 4.
  • the infrared radiation element 1 is a pair of electrodes formed so as to be in contact with the peripheral portion of the heating element layer 4 on the one surface (first surface) 2 b side of the first substrate 2. 7,7.
  • the pads 91 and 92 are electrically connected to each electrode 7 through the wiring portion 8.
  • the reflective element 40 includes a second substrate 41 and a reflective film 42 that is provided on the one surface 411 side of the second substrate 41 and reflects infrared rays radiated from the heating element layer 4.
  • the reflective element 40 is disposed in the through hole 2 a with the reflective film 42 as the first insulating layer 3 side of the infrared radiation element 1.
  • the package 10 includes a base body 20 to which both the infrared radiation element 1 and the reflection element 40 are bonded, and a lid 25 having a window hole 25a.
  • the infrared radiation element 1 is joined to the base body 20 via a first joint portion 27 made of a first die bond material.
  • the reflective element 40 is bonded to the base body 20 via a second bonding portion 28 made of a second die bond material.
  • the infrared radiation element 1 and the reflection element 40 are preferably arranged on the same plane on the one surface 201 side of the substrate 20.
  • FIG. 2 is a diagram for schematically explaining the traveling path of infrared rays radiated from the heating element layer 4.
  • a one-dot chain line in FIG. 2 indicates a traveling path of infrared rays radiated from the heating element layer 4 to the second insulating layer 5 side.
  • the broken line in FIG. 2 has shown the advancing path
  • the infrared light source 100 not only emits infrared rays emitted from the heating element layer 4 toward the second insulating layer 5 to the outside through the window member 26 but also from the heating element layer 4 to the first.
  • Infrared radiation radiated to the insulating layer 3 side is reflected by the reflective film 42 of the reflective element 40, and is emitted to the outside through the first insulating layer 3, the heating element layer 4, the second insulating layer 5, and the window material 26.
  • the first substrate 2 of the infrared radiation element 1 is formed of a single crystal silicon substrate having the one surface (first surface) 2b of the (100) plane, but is not limited thereto, and is a single crystal of the (110) plane. Alternatively, the silicon substrate may be used.
  • the first substrate 2 is not limited to a single crystal silicon substrate, and may be a polycrystalline silicon substrate or other than a silicon substrate.
  • the material of the first substrate 2 is preferably a material having a higher thermal conductivity and a larger heat capacity than the material of the first insulating layer 3.
  • the outer peripheral shape of the first substrate 2 is a rectangular shape.
  • substrate 2 is not specifically limited, For example, it is preferable to set to 10 mm ⁇ or less (10 mm ⁇ 10 mm or less).
  • the outer peripheral shape of the first substrate 2 is not limited to a square shape as long as it is a rectangular shape, and may be a rectangular shape. Further, the outer peripheral shape of the first substrate 2 is not limited to a rectangular shape, and may be a polygonal shape other than a rectangular shape, for example.
  • the first substrate 2 has a rectangular opening shape of the through hole 2a.
  • the through hole 2a of the first substrate 2 is formed in a shape having an opening area on the other surface (second surface) 2c side larger than that on the one surface (first surface) 2b side.
  • the through hole 2 a of the first substrate 2 is formed in a shape in which the opening area gradually increases as the distance from the first insulating layer 3 increases.
  • the through hole 2a is formed in a quadrangular frustum shape.
  • the through hole 2 a of the first substrate 2 is formed by etching the first substrate 2.
  • the through hole 2 a of the first substrate 2 uses an alkaline solution as an etching solution. It can be formed by anisotropic etching.
  • substrate 2 is not specifically limited, For example, polygonal shapes other than a rectangle, circular shape, etc. may be sufficient.
  • the through-hole 2a of the first substrate 2 may be formed in a shape having a uniform opening area from the one surface (first surface) 2b side to the other surface (second surface) 2c side.
  • the infrared radiation element 1 has a mask layer remaining on the other surface (second surface) 2c side of the first substrate 2 when the mask layer used to form the through-hole 2a is made of an inorganic material during manufacture. May be.
  • the mask layer for example, a laminated film of a silicon oxide film and a silicon nitride film can be employed.
  • the first insulating layer 3 includes a diaphragm portion 3D that separates the through hole 2a and the heating element layer 4, and the through hole 2a on the one surface (first surface) 2b side of the first substrate 2. And a support portion 3S that supports the diaphragm portion 3D.
  • the first insulating layer 3 includes a silicon oxide film 31 on the first substrate 2 side and a silicon nitride film 32 stacked on the opposite side of the silicon oxide film 31 from the first substrate 2 side.
  • the first insulating layer 3 is not limited to the laminated film of the silicon oxide film 31 and the silicon nitride film 32.
  • the first insulating layer 3 may have a single layer structure of the silicon oxide film 31 or the silicon nitride film 32, or a single layer made of other materials. A structure or a laminated structure of two or more layers may be used.
  • the first insulating layer 3 is an etching stopper layer when the first substrate 2 is etched from the side of the other surface (second surface) 2c of the first substrate 2 to form the through hole 2a when the infrared radiation element 1 is manufactured. It also has a function as
  • the heating element layer 4 has a rectangular planar shape.
  • the planar size of the heating element layer 4 is preferably set smaller than the planar size of the surface 33 facing the through hole 2 a in the first insulating layer 3. That is, the heating element layer 4 is preferably set smaller than the planar size of the diaphragm portion 3D.
  • the planar size of the diaphragm 3D is not particularly limited, but is preferably set to 5 mm ⁇ or less (5 mm ⁇ 5 mm or less), for example.
  • the plane size of the heating element layer 4 is preferably set so that the plane size of the radiation area excluding the contact areas where the electrodes 7 overlap each other is 3 mm ⁇ or less (3 mm ⁇ 3 mm or less).
  • the planar shape of the heating element layer 4 is not limited to a rectangular shape, and may be, for example, a polygonal shape other than a rectangular shape, a circular shape, an elliptical shape, or a lattice shape.
  • the heating element layer 4 is made of a tantalum nitride layer.
  • the material of the heating element layer 4 is not limited to tantalum nitride, but, for example, titanium nitride, nickel chromium, tungsten, titanium, thorium, platinum, zirconium, chromium, vanadium, rhodium, hafnium, ruthenium, boron, iridium, niobium, molybdenum Tantalum, osmium, rhenium, nickel, holmium, cobalt, erbium, yttrium, iron, scandium, thulium, palladium, lutetium, and the like may be employed.
  • the heating element layer 4 may be composed of a conductive polysilicon layer.
  • the heating element layer 4 is preferably a tantalum nitride layer or a conductive polysilicon layer from the viewpoint of chemical stability at high temperatures and ease of design of sheet resistance.
  • the tantalum nitride layer can change the sheet resistance by changing its composition.
  • the conductive polysilicon layer can change the sheet resistance by changing the impurity concentration and the like.
  • the conductive polysilicon layer can be composed of an n-type polysilicon layer or a p-type polysilicon layer doped with an n-type impurity or a p-type impurity at a high concentration.
  • the conductive polysilicon layer can be constituted by an n-type polysilicon layer doped with an n-type impurity at a high concentration or a p-type polysilicon layer doped with a p-type impurity at a high concentration.
  • the impurity concentration is, for example, in the range of about 1 ⁇ 10 18 cm ⁇ 3 to 5 ⁇ 10 20 cm ⁇ 3. What is necessary is just to set suitably.
  • the impurity concentration is in the range of about 1 ⁇ 10 18 cm ⁇ 3 to 1 ⁇ 10 20 cm ⁇ 3. What is necessary is just to set suitably.
  • a material having a small difference in linear expansion coefficient from the material of the first substrate 2 is preferable.
  • the infrared radiation element 1 emits infrared rays from the heating element layer 4 by energizing the heating element layer 4.
  • the peak wavelength of infrared rays emitted from the heating element layer 4 in the infrared radiation element 1 depends on the temperature of the heating element layer 4.
  • T [K] the absolute temperature of the heating element layer 4
  • ⁇ [ ⁇ m] the peak wavelength of the infrared rays emitted from the heating element layer 4
  • the heating element layer 4 constitutes a black body.
  • the infrared radiation element 1 can change Joule heat generated in the heating element layer 4 by adjusting input power applied between the pair of pads 91 and 92 from an external power source (not shown). The temperature of can be changed. Therefore, the infrared radiation element 1 can change the temperature of the heating element layer 4 according to the input power to the heating element layer 4. In addition, the infrared radiation element 1 can change the peak wavelength ⁇ of infrared rays emitted from the heating element layer 4 by changing the temperature of the heating element layer 4. For this reason, the infrared radiation element 1 can emit infrared rays in a wide infrared wavelength range.
  • the infrared light source 100 when used as an infrared light source of a gas sensor, it is preferable that the peak wavelength ⁇ of infrared rays emitted from the heating element layer 4 is about 4 ⁇ m, and the temperature of the heating element layer 4 is about 700K. And it is sufficient.
  • the heating element layer 4 forms a black body as described above.
  • the infrared radiation element 1 is estimated that the total energy E radiated per unit time in the unit area of the heating element layer 4 is approximately proportional to the absolute temperature T (that is, the infrared radiation element 1 is a Stefan-Boltzmann It is presumed that the above law is satisfied).
  • the infrared radiation element 1 can increase the amount of infrared radiation as the temperature of the heating element layer 4 is increased.
  • the second insulating layer 5 is composed of a silicon nitride film.
  • the second insulating layer 5 is not limited to this.
  • the second insulating layer 5 may be formed of a silicon oxide film, or may have a stacked structure of a silicon oxide film and a silicon nitride film.
  • the second insulating layer 5 preferably has a high transmittance with respect to infrared rays of a desired wavelength or wavelength range radiated from the heating element layer 4 when the heating element layer 4 is energized, but it is essential that the transmittance is 100%. It is not something to do.
  • the first insulating layer 3 described above preferably has a high transmittance with respect to infrared rays having a desired wavelength or wavelength range radiated from the heating element layer 4 when the heating element layer 4 is energized, but the transmittance is 100%. It is not essential to be.
  • Infrared radiation element 1 takes into account the stress balance of the sandwich structure composed of first insulating layer 3, heating element layer 4 and second insulating layer 5, and each of first insulating layer 3 and second insulating layer 5. It is preferable to set the material and thickness. As a result, the infrared radiation element 1 can improve the stress balance of the above-described sandwich structure, and can further suppress warping and breakage of the sandwich structure, thereby further improving the mechanical strength. It is possible to improve.
  • the thickness of the heating element layer 4 is preferably 0.2 ⁇ m or less from the viewpoint of reducing the heat capacity of the heating element layer 4.
  • the total thickness of the first insulating layer 3, the heating element layer 4 and the second insulating layer 5 is preferably 10 ⁇ m or less. Further, this total thickness is, for example, from the viewpoint of reducing the heat capacity of the laminated structure of the first insulating layer 3, the heating element layer 4, and the second insulating layer 5 and improving the infrared radiation efficiency, for example, It is preferably set in the range of about 0.1 ⁇ m to 1 ⁇ m, more preferably 0.7 ⁇ m or less.
  • the pair of electrodes 7 and 7 are formed on the one surface (first surface) 2b side of the first substrate 2 so as to be in contact with the peripheral portion (left and right end portions in FIG. 3A) of the heating element layer 4.
  • Each electrode 7 is formed on the heating element layer 4 through a contact hole 5 a formed in the second insulating layer 5, and is electrically connected to the heating element layer 4.
  • each electrode 7 is in ohmic contact with the heating element layer 4.
  • each electrode 7 is an aluminum alloy (Al—Si).
  • the material of each electrode 7 is not particularly limited, and for example, gold or copper may be employed.
  • each electrode 7 should just be a material in which the part which contact
  • each electrode 7 has a three-layer structure in which a first layer, a second layer, and a third layer are laminated in order from the heating element layer 4 side, and the material of the first layer in contact with the heating element layer 4 is a refractory metal. (E.g., chromium), the second layer material may be nickel, and the third layer material may be gold.
  • Each wiring part 8 and each pad 91, 92 are preferably made of the same material as each electrode 7 and set to the same layer structure and the same thickness. Thereby, the infrared radiation element 1 can form each wiring part 8 and each pad 91 and 92 simultaneously with each electrode 7.
  • the thickness of the pads 91 and 92 is preferably set in the range of about 0.5 to 2 ⁇ m.
  • the infrared radiation element 1 for example, the first insulating layer 3, the heating element layer 4, and the second insulating layer 5 are sequentially formed on the one surface (first surface) 2 b side of the first substrate 2. Then, the contact hole 5a is formed in the second insulating layer 5, and thereafter, each electrode 7, each wiring portion 8 and each pad 91, 92 are formed, and subsequently, the through hole 2a is formed in the first substrate 2. .
  • a method for forming the silicon oxide film 31 of the first insulating layer 3 for example, a thin film forming technique such as a thermal oxidation method or a CVD (Chemical Vapor Deposition) method can be adopted, and a thermal oxidation method is preferable.
  • a thin film formation technique such as a CVD method can be used, and an LPCVD (Low Pressure Chemical Vapor Deposition) method is preferable.
  • a method for forming the heating element layer 4 for example, a thin film forming technique such as a sputtering method, a vapor deposition method, or a CVD method, and a processing technique using a photolithography technique and an etching technique can be used.
  • a thin film forming technique such as a sputtering method, a vapor deposition method, or a CVD method
  • a processing technique using a photolithography technique and an etching technique can be used.
  • a method for forming the second insulating layer 5 for example, a thin film forming technique such as a CVD method and a processing technique using a photolithography technique and an etching technique can be used.
  • a CVD method for forming the second insulating layer 5 a plasma CVD method is preferable.
  • a photolithography technique and an etching technique may be used.
  • each electrode 7, each wiring portion 8, and each pad 91, 92 for example, a thin film forming technique such as a sputtering method, a vapor deposition method, and a CVD method, and a processing technique using a photolithography technique and an etching technique Can be used.
  • a thin film forming technique such as a sputtering method, a vapor deposition method, and a CVD method
  • a processing technique using a photolithography technique and an etching technique can be used.
  • the first substrate 2 is used as a mask layer with a laminated film (not shown) of a silicon oxide film and a silicon nitride film on the other surface (second surface) 2c side of the first substrate 2 as a first substrate. 2 may be formed by etching from the other surface (second surface) 2c side.
  • the silicon oxide film 31 serving as the basis of the mask layer is formed on the other surface (second surface) 2c side of the first substrate 2 simultaneously with the formation of the silicon oxide film 31 of the first insulating layer 3.
  • a film is formed, and simultaneously with the formation of the silicon nitride film 32 of the first insulating layer 3, a silicon nitride film is formed on the other surface (second surface) 2 c side of the first substrate 2.
  • the patterning of the laminated film of the silicon oxide film and the silicon nitride film that is the basis of the mask layer may be performed using a photolithography technique and an etching technique.
  • the manufacturing method of the infrared radiation element 1 of the present embodiment it is possible to increase the thickness accuracy of the first insulating layer 3 by using the first insulating layer 3 as an etching stopper layer when forming the through hole 2a. In addition, it becomes possible to prevent a part of the first substrate 2 and residues from remaining on the through hole 2a side in the first insulating layer 3. In this manufacturing method, it is possible to suppress variations in mechanical strength of the first insulating layer 3 and variations in heat capacity of the entire diaphragm portion 3D of the first insulating layer 3 for each infrared radiation element 1.
  • the process until the formation of the through hole 2a is completed at the wafer level, and after forming the through hole 2a, the individual infrared radiation elements 1 may be separated. That is, in manufacturing the infrared radiation element 1, for example, a silicon wafer as a basis of the first substrate 2 is prepared, and a plurality of infrared radiation elements 1 are formed on the silicon wafer according to the above-described manufacturing method. The infrared radiation element 1 may be separated.
  • the infrared radiation element 1 can be manufactured using a manufacturing technology of MEMS (micro-electro-mechanical systems).
  • MEMS micro-electro-mechanical systems
  • the heating element layer 4 has a sheet resistance set in the package 10 so as to suppress a decrease in infrared emissivity due to impedance mismatch with an atmosphere (for example, a nitrogen gas atmosphere) in contact with the second insulating layer 5. It is.
  • the sheet resistance of the heating element layer 4 is determined by the nitrogen gas used when the tantalum nitride layer that forms the basis of the heating element layer 4 is formed by reactive sputtering. It is possible to control by partial pressure. In short, when tantalum nitride is adopted as the material of the heating element layer 4, it is possible to change the sheet resistance by changing the composition of the tantalum nitride layer.
  • conductive polysilicon is employed as the material of the heating element layer 4
  • the sheet resistance of the heating element layer 4 is changed by changing the impurity concentration of the conductive polysilicon layer that is the basis of the heating element layer 4. It is possible.
  • As a method for controlling the impurity concentration of the conductive polysilicon layer there are a method of doping impurities after forming a non-doped polysilicon layer, a method of doping impurities during film formation, and the like.
  • the atmosphere in contact with the second insulating layer 5 is a nitrogen gas atmosphere
  • tantalum nitride is adopted as the material of the heating element layer 4
  • the heating element layer 4 is heated to, for example, 500 ° C. as a desired use temperature.
  • the sheet resistance at which the emissivity of infrared rays from the heating element layer 4 becomes maximum at this operating temperature is 189 ⁇ / ⁇ (189 ⁇ / sq.), And the maximum value of emissivity is 50%. . That is, if the sheet resistance of the heating element layer 4 is 189 ⁇ / ⁇ , the infrared radiation element 1 can maximize the infrared emissivity by impedance matching with air.
  • the infrared radiation element 1 may set the sheet resistance of the heating element layer 4 in the range of 73 to 493 ⁇ / ⁇ in order to suppress a decrease in the emissivity and to secure an emissivity of 40% or more, for example. .
  • the sheet resistance at which the emissivity is maximized at a desired use temperature is referred to as a prescribed sheet resistance
  • the sheet resistance of the heating element layer 4 at the desired use temperature is within a range of the prescribed sheet resistance ⁇ 10%. It is more preferable to set.
  • the infrared radiation element 1 reduces the heat capacity of the laminated structure (here, the first insulating layer 3, the heating element layer 4, and the second insulating layer 5) formed on the one surface (first surface) 2b side of the substrate 2. By doing so, it becomes possible to speed up the response of the temperature change of the heating element layer 4 to the voltage waveform applied between the pair of pads 91 and 92. As a result, the temperature of the heating element layer 4 is likely to rise, and it becomes possible to increase the output and increase the response speed.
  • the first substrate 2 is formed from a single crystal silicon substrate, and the first insulating layer 3 is composed of a silicon oxide film 31 and a silicon nitride film 32.
  • the infrared radiation element 1 has a larger heat capacity and thermal conductivity of the first substrate 2 than the first insulating layer 3, and the first substrate 2 has a function as a heat sink. It becomes possible to increase the response speed and to improve the stability of infrared radiation characteristics.
  • the temperature of the heating element layer 4 is set to the highest use temperature of silicon (a temperature slightly lower than the melting point of silicon). ) And the amount of infrared radiation can be greatly increased as compared with infrared light emitting diodes.
  • the temperature of the heating element layer 4 is restricted by the material of each electrode 7 as long as at least a portion in contact with the heating element layer 4 is formed of a metal having a melting point higher than that of silicon. It is possible to raise without having to.
  • the infrared radiation element 1 has the heating element layer 4, the electrode 7, the wiring portion 8, and the pads 91 and 92 as symmetry axes with the center line of the infrared radiation element 1 orthogonal to the direction in which the pair of electrodes 7 and 7 are arranged in plan view. It is preferable that they are arranged in line symmetry. Thereby, the infrared radiation element 1 can further improve the mechanical strength, and can suppress the in-plane variation of the temperature of the heating element layer 4.
  • the second substrate 41 of the reflective element 40 is formed by a single crystal silicon substrate having the one surface 411 having a (100) plane, but is not limited thereto, and is formed by a single crystal silicon substrate having a (110) plane. May be.
  • the second substrate 41 is not limited to a single crystal silicon substrate, and may be a metal substrate, a glass substrate, or the like, for example.
  • As the second substrate 41 one having a small surface roughness of the one surface 411 is preferable.
  • the arithmetic average roughness Ra specified in JIS B 0601-2001 (ISO 4287-1997) is preferably 10 nm or less, and more preferably several nm or less.
  • the outer peripheral shape of the second substrate 41 is a rectangular shape.
  • the external size of the second substrate 41 is smaller than the opening size of the through hole 2 a of the first substrate 2.
  • the outer peripheral shape of the second substrate 41 is preferably similar to the surface 33 facing the through hole 2 a in the first insulating layer 3 of the infrared radiation element 1. Further, it is preferable that the outer size of the second substrate 41 is set large so as not to contact the infrared radiation element 1.
  • the relative positional relationship between the reflective film 42 of the reflective element 40 and the first insulating layer 3 of the infrared radiation element 1 is made closer as long as the reflective element 40 can be regarded as not affecting the temperature of the heating element layer 4. Is preferred.
  • the reflective element 40 can be regarded as not affecting the temperature of the heating element layer 4 means that the reflective element 40 and the heating element layer 4 can be regarded as being thermally insulated. This means that the temperature rise of the heating element layer 4 is not suppressed by the influence of the reflection element 40.
  • the distance between the reflective film 42 of the reflective element 40 and the first insulating layer 3 of the infrared radiation element 1 may be set in a range of about 50 ⁇ m to 100 ⁇ m, for example. Therefore, the thickness dimension of the second substrate 41 is set smaller than the thickness dimension of the first substrate 41. For this reason, the thickness dimension of the silicon wafer that is the origin of the second substrate 41 is set smaller than the thickness dimension of the silicon wafer that is the origin of the first substrate 2.
  • the reflective film 42 of the reflective element 40 is preferably, for example, one metal film selected from the group of an Au film, an Al film, an Al—Si film, and an Al—Cu film. If the reflecting film 40 employs an Au film as the reflecting film 42, it has higher reflectivity and higher corrosion resistance than the case of employing an Al film, so that it is possible to improve reflectivity and reliability. Become. Further, if the reflecting element 40 employs an Al film, an Al—Si film, an Al—Cu film, or the like as the reflecting film 42, the cost can be reduced as compared with the case where an Au film is employed. .
  • the reflective element 40 may employ another metal film such as an Ag film or a Cu film as the reflective film 42.
  • the reflective film 42 is formed of a metal film, it is preferable to form the film under film forming conditions in which the surface of the metal film is a mirror surface.
  • the reflective film 42 is not limited to a metal film but may be a dielectric multilayer film.
  • the reflective element 40 employs a metal film or a dielectric multilayer film as the reflective film 42, the reflective film 42 can be easily formed by vapor deposition, sputtering, CVD, or the like.
  • the reflective element 40 can be manufactured using a general semiconductor manufacturing process by adopting a silicon substrate as the second substrate 41. In this case, in manufacturing the reflective element 40, the process until the formation of the reflective film 42 is completed at the wafer level, and then the individual reflective elements 40 are separated. That is, in manufacturing the reflective element 40, for example, a silicon wafer that is the basis of the second substrate 41 is prepared, and a plurality of reflective elements 40 are formed on the silicon wafer, and then separated into individual reflective elements 40. That's fine.
  • the reflective element 40 can make the one surface 401 a mirror surface by adopting a silicon substrate as the second substrate 41.
  • At least one surface of the silicon wafer is generally a mirror surface, and if the silicon wafer is used as the source of the second substrate 41, the one surface 411 of the second substrate 41 can be a mirror surface.
  • the reflective element 40 can improve productivity and reduce costs compared to the case where the individual reflective elements 40 are individually manufactured. It becomes.
  • the reflective element 40 is disposed in the through hole 2 a with the reflective film 42 as the first insulating layer 3 side of the infrared radiation element 1.
  • the base body 20 of the package 10 has the infrared radiation element 1 and the reflection element 40 joined to each other through a first joint 27 and a second joint 28, respectively. That is, the base 20 of the package 10 has the infrared radiation element 1 bonded thereto via the first bonding portion 27 and the reflection element 40 bonded via the second bonding portion 28.
  • first die bond material of the first joint portion 27 for example, silicone resin, epoxy resin, low-melting glass, solder, or the like can be used.
  • the second die bonding material of the second bonding portion 28 for example, silicone resin, epoxy resin, low melting point glass, solder, or the like can be employed.
  • the curing of the silicone resin may be hindered by mixing them. That is, when the first die bond material is an epoxy resin and the second die bond material is a silicone resin, or when the second die bond material is an epoxy resin and the first die bond material is a silicone resin, curing of the silicone resin is inhibited. It may be done.
  • the bonding performance is deteriorated by mixing the first die bonding material and the second die bonding material.
  • the first die bond material and the second die bond material are the same material.
  • the infrared light source 100 by using the same material for the first die bond material and the second die bond material, it becomes possible to mount the infrared radiation element 1 and the reflection element 40 in the same process at the time of manufacture, and productivity is improved. It becomes possible to improve.
  • the infrared radiation element 1 and the reflection element 40 may be bonded to the base body 20 by, for example, a surface activated bonding method or a eutectic bonding method without using the first die bonding material and the second die bonding material. .
  • the base body 20 is composed of a metal stem.
  • the base 20 is formed in a disk shape.
  • the base 20 is provided with two lead terminals 21 and 22 that penetrate in the thickness direction of the base 20.
  • the first pad (one pad) 91 of the pair of pads 91, 92 of the infrared radiation element 1 is electrically connected to the first lead terminal (one lead terminal) 21 via the wire 23.
  • the second pad (the other pad) 92 is electrically connected to the second lead terminal (the other lead terminal) 22 via the wire 24.
  • the wires 23 and 24 for example, gold wires or Al wires can be employed.
  • the first lead terminal (one lead terminal) 21 is inserted into the first hole 20b of the base 20 and sealed by a first sealing portion 20d made of sealing glass having electrical insulation.
  • the second lead terminal (the other lead terminal) 22 is inserted into a second hole (not shown) of the base body 20 and sealed by a second sealing portion (not shown).
  • sealing glass having electrical insulation may be employed, or a sealing metal material may be employed.
  • the infrared light source 100 can make the 2nd lead terminal 22 and the base
  • the lid 25 is composed of a metal cap.
  • the lid 25 is formed in a bottomed cylindrical shape, and the open end side (rear side) is closed by the base body 20.
  • the lid 25 has a window hole 25 a formed in the front wall located on the one surface 11 side of the infrared radiation element 1.
  • the opening shape of the window hole 25a is a rectangular shape, but is not limited thereto, and may be, for example, a polygonal shape other than a rectangular shape or a circular shape.
  • a flange portion 20c formed on the peripheral portion of the base body 20 and an outer flange portion 25c extending outward from the open end (rear end edge) of the lid 25 are sealed by welding.
  • the outer peripheral shape of the base body 20 and the lid 25 is circular, but is not limited to a circular shape, and may be, for example, a rectangular shape.
  • the package 10 is configured as a can package, but is not limited thereto, and may be a surface-mount package.
  • the base body 20 is composed of, for example, a ceramic substrate provided with an appropriate conductor pattern.
  • the ceramic substrate may have a flat plate shape or a box shape (for example, a rectangular box shape) with one surface open.
  • the lid 25 can be constituted by, for example, a box-shaped metal cap with one surface on the base 20 side open.
  • cover 25 can be comprised by the flat metal plate which plugs up the said one surface of the base
  • the lid 25 and the metal pattern of the substrate 20 are metal-bonded by seam welding (resistance welding method), Airtightness can be increased.
  • the lid 25 is preferably made of, for example, Kovar and plated with nickel.
  • the metal pattern of the substrate 20 is preferably formed of, for example, kovar, plated with nickel, and further plated with gold.
  • the window material 26 for example, a silicon substrate, a sapphire substrate, or the like can be adopted.
  • the material of the window material 26 is not limited to silicon or sapphire, and for example, germanium, zinc sulfide, gallium arsenide, or the like can be employed.
  • the window material 26 is made of silicon, which has less environmental burden than zinc sulfide or gallium arsenide, can be reduced in cost compared to germanium, and has a smaller wavelength dispersion than zinc sulfide. It is preferable to do.
  • an appropriate material may be adopted based on the peak wavelength ⁇ of infrared rays emitted from the infrared radiation element 1.
  • the window material 26 has an anti-reflection coating (AR coat) that prevents reflection of infrared rays emitted from the infrared radiation element 1 on both the infrared incidence surface 26a side and the infrared emission surface 26b side. It is preferable to provide it.
  • the window member 26 may be provided with an optical filter film instead of the antireflection film.
  • the optical characteristics (filter characteristics) of the optical filter film may be appropriately designed based on the peak wavelength and wavelength band of infrared rays emitted from the infrared radiation element 1.
  • the optical filter film can be formed, for example, by alternately laminating a plurality of types of thin films having different refractive indexes.
  • the infrared light source 100 can cut infrared light and visible light in an unnecessary wavelength region other than a desired wavelength region with the optical filter film.
  • the window member 26 may have a configuration in which an optical filter film is provided on one of the infrared incident surface 26a side and the infrared emission surface 26b side, and an antireflection film for preventing infrared reflection is provided on the other side. That is, the window member 26 may be configured such that an optical filter film is provided on the infrared incident surface 26a side and an antireflection film is provided on the infrared outgoing surface 26b side, or an optical filter film is provided on the infrared outgoing surface 26b side. An antireflection film may be provided on the incident surface 26a side. For the antireflection film, the same material as that of the optical filter film may be used, and the laminated structure may be appropriately designed.
  • the optical films such as the optical filter film and the antireflection film described above are formed using a thin film forming technique such as a vapor deposition method or a sputtering method, and then patterned using a photolithography technique and an etching technique. Alternatively, patterning using laser light or patterning using a dicing saw may be performed.
  • a thin film forming technique such as a vapor deposition method or a sputtering method
  • an optical film is formed only in a predetermined region by arranging an appropriate shadow mask. A step of patterning the optical film after the film is formed becomes unnecessary.
  • the window material 26 is joined to the lid 25 via a joint portion 29.
  • cover 25 are joined over the perimeter.
  • solder, epoxy resin, low melting point glass, or the like can be employed as a material of the joint portion 29 that joins the window material 26 and the lid 25 for example.
  • solder When solder is employed as the material of the joint portion 29, it is preferable to provide a metallized film (metal film) made of a metal material having good wettability with respect to the solder in a region corresponding to the joint portion 29 in the window material 26.
  • a metallized film metal film
  • the low melting point glass lead-free low melting point glass is preferably used.
  • the window material 26 is formed with a step portion 26c positioned on the inner peripheral surface and the peripheral portion of the window hole 25a in the lid 25 over the entire periphery.
  • the window member 26 may be formed by joining the stepped portion 26 c over the entire circumference of the peripheral portion of the window hole 25 a of the lid 25 through the joint portion 29.
  • the infrared light source 100 is provided with the step portion 26 c in the window member 26, thereby suppressing the material of the joint portion 29 from flowing into the infrared incident surface 26 a and the infrared emitting surface 26 b of the window member 26.
  • the stepped portion 26c may be formed using a dicing blade or the like at the stage of the silicon wafer before the division, or may be formed using a photolithography technique and an etching technique before the dicing process. Also good.
  • the window material 26 has a flat plate shape, and a stepped portion 26c is formed in the peripheral portion, but is not limited to this shape.
  • the window member 26 may be constituted by a semiconductor lens in which a lens part and a flange part surrounding the lens part over the entire circumference are formed integrally.
  • a semiconductor lens has an anode whose contact pattern is designed with a semiconductor substrate (for example, a silicon substrate) according to a desired lens shape, and an ohmic contact with the semiconductor substrate on one surface (first surface) side of the semiconductor substrate.
  • a method for manufacturing this type of semiconductor lens for example, a method for manufacturing a semiconductor lens disclosed in Japanese Patent No. 3897055, Japanese Patent No. 3897056, and the like can be applied.
  • the semiconductor lens described above may be separated into individual semiconductor lenses by dicing or the like after forming a large number of semiconductor lenses (silicon lenses) using, for example, a semiconductor wafer (for example, a silicon wafer) as a semiconductor substrate.
  • the above-mentioned semiconductor lens may form the level
  • the internal space (airtight space) surrounded by the package 10 and the window material 26 is a nitrogen gas atmosphere, but is not limited thereto, and may be a vacuum atmosphere, for example.
  • a getter that absorbs residual gas in the package 10 is provided in the package 10.
  • the material of the getter for example, a non-evaporable getter made of a zirconium alloy or a titanium alloy may be employed.
  • the infrared light source 100 of the present embodiment described above includes the infrared radiation element 1, the package 10, the window material 26, and the reflection element 40.
  • the infrared radiation element 1 includes a first substrate 2, a first insulating layer 3 formed on the one surface (first surface) 2 b side of the first substrate 2, and heat generated on the first insulating layer 3.
  • a body layer 4, two pads 91 and 92 electrically connected to the heating element layer 4, and a second insulating layer 5 laminated on the heating element layer 4, and a through hole 2 a is formed in the first substrate 2. Is formed.
  • the second insulating layer 5 and the first insulating layer 3 are made of a material that is transparent to infrared rays emitted from the heating element layer 4.
  • the reflective element 40 includes a second substrate 41 and a reflective film 42 that is provided on the one surface 411 side of the second substrate 41 and reflects infrared radiation emitted from the heating element layer 4.
  • the reflective film 42 emits infrared radiation.
  • the element 1 is disposed in the through hole 2a as the first insulating layer 3 side. Therefore, in the infrared light source 100 of the present embodiment, it is possible to suppress the infrared light reflected by the reflecting element 40 from entering the inner peripheral surface 2d of the through hole 2a of the first substrate 2 in the infrared radiation element 1. Thus, the infrared radiation efficiency can be improved.
  • the distance between the first insulating layer 3 and the reflective film 42 can be determined by the difference between the thickness dimension of the first substrate 2 and the thickness dimension of the reflective element 40.
  • the reflecting film 42 can be brought close to the first insulating layer 3 without being brought into contact therewith.

Landscapes

  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Resistance Heating (AREA)

Abstract

L'invention concerne une source de lumière infrarouge qui comprend un élément rayonnant de rayons infrarouges, un conditionnement, un matériau de fenêtre et un élément réfléchissant. L'élément rayonnant de rayons infrarouges comprend : un premier substrat ; une première couche isolante formée sur un côté de surface du premier substrat ; une couche de génération de chaleur stratifiée sur la première couche isolante ; deux plots connectés électriquement à la couche de génération de chaleur ; et une deuxième couche isolante stratifiée sur la couche de génération de chaleur. Un trou traversant est formé dans le premier substrat. La deuxième et la première couche isolante sont formées à partir d'un matériau qui est transparent aux rayons infrarouges rayonnés par la couche de génération de chaleur. L'élément réfléchissant comprend : un deuxième substrat et un film réfléchissant qui est placé sur un côté de surface du deuxième substrat et qui réfléchit les rayons infrarouges rayonnés par la couche de génération de chaleur. L'élément réfléchissant est agencé à l'intérieur du trou traversant, comme le premier côté de couche isolante de l'élément rayonnant de rayons infrarouges.
PCT/JP2013/002232 2012-08-07 2013-04-01 Source de lumière infrarouge WO2014024347A1 (fr)

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JP2012-174975 2012-08-07
JP2012174975A JP2014035817A (ja) 2012-08-07 2012-08-07 赤外光源

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WO2014024347A1 true WO2014024347A1 (fr) 2014-02-13

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WO2018185159A1 (fr) * 2017-04-07 2018-10-11 Siemens Aktiengesellschaft Structure de substrat pour un capteur de gaz ou une source de lumière infrarouge
WO2020215030A1 (fr) * 2019-04-18 2020-10-22 Surface Igniter, LLC Source infrarouge pour applications de feux de piste d'aéroport

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Publication number Priority date Publication date Assignee Title
KR102221892B1 (ko) * 2016-10-24 2021-03-02 미쓰비시덴키 가부시키가이샤 반도체 장치
CN208298251U (zh) * 2018-04-17 2018-12-28 深圳市道通科技股份有限公司 车载摄像头的标定装置及系统

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JP2000236110A (ja) * 1999-02-15 2000-08-29 Anritsu Corp 赤外線放射素子
JP2005114534A (ja) * 2003-10-07 2005-04-28 Denso Corp 赤外線光源
JP2009210287A (ja) * 2008-02-29 2009-09-17 Panasonic Electric Works Co Ltd 赤外線放射素子

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JP2000236110A (ja) * 1999-02-15 2000-08-29 Anritsu Corp 赤外線放射素子
JP2005114534A (ja) * 2003-10-07 2005-04-28 Denso Corp 赤外線光源
JP2009210287A (ja) * 2008-02-29 2009-09-17 Panasonic Electric Works Co Ltd 赤外線放射素子

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018185159A1 (fr) * 2017-04-07 2018-10-11 Siemens Aktiengesellschaft Structure de substrat pour un capteur de gaz ou une source de lumière infrarouge
WO2020215030A1 (fr) * 2019-04-18 2020-10-22 Surface Igniter, LLC Source infrarouge pour applications de feux de piste d'aéroport
US11112087B2 (en) 2019-04-18 2021-09-07 Surface Igniter, LLC Infrared source for airport runway light applications
CN113677598A (zh) * 2019-04-18 2021-11-19 表面点火装置有限责任公司 用于机场跑道灯的红外光源
GB2597204A (en) * 2019-04-18 2022-01-19 Surface Igniter Llc Infrared source for airport runway light applications
RU2767557C1 (ru) * 2019-04-18 2022-03-17 СЕРФЕЙС ИГНИТЕР, ЭлЭлСи Источник инфракрасного излучения для применений, связанных с огнями взлетно-посадочных полос аэропортов
DE112020001966B4 (de) 2019-04-18 2022-04-14 Surface Igniter, LLC Infrarotquelle für die Befeuerung von Flughafenlandebahnen
CN113677598B (zh) * 2019-04-18 2022-04-26 表面点火装置有限责任公司 用于机场跑道灯的红外光源
US11333321B2 (en) 2019-04-18 2022-05-17 Surface Igniter, LLC Infrared source for airport runway light applications
GB2597204B (en) * 2019-04-18 2022-08-10 Surface Igniter Llc Infrared source for airport runway light applications

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TW201407658A (zh) 2014-02-16
TWI470670B (zh) 2015-01-21
JP2014035817A (ja) 2014-02-24

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