WO2014024306A1 - Dispositif optique et système optique de champ proche - Google Patents

Dispositif optique et système optique de champ proche Download PDF

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Publication number
WO2014024306A1
WO2014024306A1 PCT/JP2012/070510 JP2012070510W WO2014024306A1 WO 2014024306 A1 WO2014024306 A1 WO 2014024306A1 JP 2012070510 W JP2012070510 W JP 2012070510W WO 2014024306 A1 WO2014024306 A1 WO 2014024306A1
Authority
WO
WIPO (PCT)
Prior art keywords
field light
distance
energy
dielectric layer
recording medium
Prior art date
Application number
PCT/JP2012/070510
Other languages
English (en)
Japanese (ja)
Inventor
孝幸 糟谷
杉浦　聡
Original Assignee
パイオニア株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パイオニア株式会社 filed Critical パイオニア株式会社
Priority to PCT/JP2012/070510 priority Critical patent/WO2014024306A1/fr
Priority to JP2014529223A priority patent/JPWO2014024306A1/ja
Publication of WO2014024306A1 publication Critical patent/WO2014024306A1/fr

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/313—Disposition of layers
    • G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
    • G11B5/314—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure where the layers are extra layers normally not provided in the transducing structure, e.g. optical layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G11B2005/0021—Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
    • G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
    • G11B5/60—Fluid-dynamic spacing of heads from record-carriers
    • G11B5/6005—Specially adapted for spacing from a rotating disc using a fluid cushion
    • G11B5/6088—Optical waveguide in or on flying head

Definitions

  • the present invention relates to a technical field of a near-field light device that provides a minute spot in which energy is concentrated using, for example, near-field light, and a system in which the near-field light device is applied to, for example, a magnetic recording head.
  • the laser beam is condensed using an objective lens or an optical waveguide. It cannot be narrowed down to a size smaller than the wavelength of light.
  • the metal conductor which is a near-field light generating part has a size of, for example, several tens of nanometers or less and a wavelength of light or less. For this reason, most of the condensed laser light does not contribute to the generation of near-field light, and there is a technical problem that the light use efficiency is low.
  • the present invention has been made in view of the above problems, for example, and an object thereof is to provide a near-field light device and system capable of efficiently generating near-field light.
  • the near-field light device of the present invention includes a first member and a second member. Between the first member and the second member, the first member and the second member When a medium made of a material different from the second member is interposed, and the second member is a member that receives energy via near-field light generated in the first member, the second member is: The first member is disposed away from the first member by a distance at which the energy related to the near-field light propagating in the medium becomes a local maximum, and the second member does not receive energy via the near-field light. In the case of a member, the second member is disposed away from the first member by a distance at which the energy of the near-field light propagating in the medium becomes a minimum.
  • FIG. 1 is a schematic configuration diagram illustrating a configuration of a near-field light device according to the embodiment.
  • FIG. 2 is a conceptual diagram showing the concept of energy fluctuation of near-field light propagating in the medium.
  • the scale of each layer and each member is different in order to make each layer and each member recognizable on the drawing.
  • the near-field light device includes a part A and a part B. Between parts A and B, a medium made of a material different from parts A and B, such as air, a lubricant, and a dielectric, is interposed.
  • part B is a member that receives energy via the near-field light generated in the part A
  • the distance L is set so that the intensity of the propagation energy becomes a mountain at the position of the part B
  • the part A Therefore, energy can be appropriately propagated to part B.
  • part B is a member that does not receive energy through near-field light generated in part A
  • the distance L is set so that the intensity of propagation energy is a valley at the position of part B
  • the part It is possible to prevent unintended energy from being propagated from A to part B.
  • the “part A” and “part B” according to the present embodiment are examples of the “first member” and the “second member” according to the present invention, respectively.
  • FIG. 3 is a schematic configuration diagram illustrating a configuration of a system using the near-field light device according to the first embodiment.
  • a system 400 includes a near-field light device 200 and a recording medium 300.
  • the near-field optical device 200 is laminated on the mesa-shaped semiconductor layer 15 made of, for example, Si (silicon), GaN (gallium nitride), GaAs (gallium arsenide), etc., and is made of, for example, SiO (silicon oxide).
  • the near-field light device 200 when light is incident on the near-field light device 200, energy resulting from the incident light is collected on the metal film 13. The energy collected on the metal film 13 propagates to the metal particles 11.
  • the recording of information on the recording medium 300 uses, for example, that at least a part of the energy propagated to the metal particles 11 raises the temperature of a part of the recording medium 300 facing the metal particles 11 as near-field light. Done.
  • the distance between the metal particles 11 and the recording medium 300 is set to a distance A.
  • a distance between the upper surface of the dielectric layer 12 and the recording medium 300 is set to a distance B.
  • the distance between the upper surface and the lower surface of the dielectric layer 12 (that is, the thickness of the dielectric layer 12) is set to the distance C.
  • the distance between the upper surface of the dielectric layer 14 and the recording medium 300 is set to the distance D.
  • the distance A is a near-field propagating in the air interposed between the metal particles 11 and the recording medium 300.
  • the light energy intensity is set to be a mountain (see FIG. 2) at the position of the recording medium 300.
  • the distance C is determined by the energy intensity of the near-field light propagating in the dielectric layer 12 at the position of the metal particles 11. Is set to be a mountain.
  • the distance B has a trough (see FIG. Reference) is set.
  • the energy intensity of the near-field light propagating in the air becomes a valley at the position of the recording medium 300. Is set as follows.
  • the “distance A” and the “distance B” according to the present embodiment are the “first distance” according to the present invention, respectively. And “second distance”.
  • FIG. 4 is a schematic configuration diagram showing a configuration of a system using the near-field light device according to the second embodiment.
  • 2nd Example while omitting the description which overlaps with 1st Example suitably, the same code
  • the system 410 includes a near-field light device 210 and a recording medium 300.
  • the near-field light device 210 includes a mesa-shaped semiconductor layer 15 made of, for example, Si, GaN, GaAs, and the like, and a dielectric layer 12 made of a dielectric such as SiO, VaO, etc., stacked on the semiconductor layer 15;
  • the metal particles 11 are stacked on the dielectric layer 12 and made of, for example, Au, Ag, or the like.
  • the near-field light device 210 when light is incident on the near-field light device 210, energy caused by the incident light propagates to the metal particles 11.
  • the recording of information on the recording medium 300 uses, for example, that at least a part of the energy propagated to the metal particles 11 raises the temperature of a part of the recording medium 300 facing the metal particles 11 as near-field light. Done.
  • FIG. 5 is a schematic configuration diagram showing a configuration of a system using the near-field light device according to the third embodiment.
  • 3rd Example while overlapping with 1st Example is abbreviate
  • the system 420 includes a near-field light device 220 and a recording medium 300.
  • the near-field light device 220 includes a mesa-shaped semiconductor layer 15 made of, for example, Si, GaN, GaAs, and the like, and a dielectric layer 12 made of a dielectric such as SiO, VaO, etc., stacked on the semiconductor layer 15;
  • a metal particle 11 made of Au, Ag, or the like is provided.
  • the metal particles 11 are covered with a dielectric layer 12. If comprised in this way, the metal particle 11 can be protected and it is very advantageous practically.
  • FIG. 6 is a schematic configuration diagram showing a configuration of a system using a near-field light device according to a modification of the third embodiment.
  • the near-field light device 220 or 230 when light is incident on the near-field light device 220 or 230, energy caused by the incident light propagates to the metal particles 11.
  • the recording of information on the recording medium 300 uses, for example, that at least a part of the energy propagated to the metal particles 11 raises the temperature of a part of the recording medium 300 facing the metal particles 11 as near-field light. Done.
  • FIG. 7 is a schematic configuration diagram showing a configuration of a system using the near-field light device according to the fourth embodiment.
  • symbol is attached
  • the system 440 includes a near-field light device 240 and a recording medium 300.
  • the near-field light device 240 is laminated on a semiconductor layer 16 having a mesa shape having a plurality of quantum dots made of, for example, InAs (indium arsenide), for example, inside a semiconductor made of, for example, GaAs,
  • a dielectric layer 12 made of a dielectric material such as SiO or VaO and metal particles 11 made of Au or Ag, for example, are provided. If comprised in this way, the energy of the light which injected into the semiconductor layer 16 can be propagated to the metal particle 11 comparatively efficiently by the quantum dot.
  • the semiconductor layer 17 includes a plurality of quantum dot layers in which quantum dots are regularly arranged in a lattice shape. May be.
  • FIG. 8 is a schematic configuration diagram showing the configuration of a system using a near-field light device according to a modification of the fourth embodiment.
  • quantum dots for example, particles having a size that exhibits a quantum effect such as metal nanoparticles may be included in the semiconductor layer.
  • the band gap can be controlled freely by controlling the size of the quantum dots.
  • the semiconductor layer 16 can be designed so that light of an arbitrary wavelength can be efficiently absorbed and emitted.
  • white light from an LED (Light Emitting Diode) or the like is used as incident light, and the semiconductor layer 16 can absorb a wavelength suitable for the size of the quantum dots.
  • the near-field light device 240 or 250 when light is incident on the near-field light device 240 or 250, energy caused by the incident light propagates to the metal particles 11.
  • the recording of information on the recording medium 300 uses, for example, that at least a part of the energy propagated to the metal particles 11 raises the temperature of a part of the recording medium 300 facing the metal particles 11 as near-field light. Done.
  • FIG. 9 is a diagram illustrating an example of magnetic recording using the magnetic head according to the example.
  • the near-field light device 230 shown in FIG. 6 is used.
  • the present invention is not limited to the near-field light device 230, and various near-field light devices described above can be applied.
  • a light source such as a surface emitting laser is controlled so as to emit light according to an input signal.
  • the metal particles 11 and a part of the magnetic recording medium 310 facing the metal particles 11 are integrated to generate magnetism. Energy is applied to the recording medium 310.
  • the coercive force of the region of the magnetic recording medium 310 given energy by the near-field light is reduced, and magnetic recording by the writing magnetic pole can be easily performed.
  • the recording signal recorded on the magnetic recording medium 310 is read by the reading magnetic pole.
  • the recording density can be improved as the size of the metal particles 11 is reduced.
  • the distance between the metal particles 11 of the near-field light device and the magnetic recording medium 310 is such that the energy intensity of the near-field light propagating in the air is a peak at the position of the magnetic recording medium 310 (see FIG. 2). Is set to a distance A that is For this reason, energy is efficiently transmitted to the portion of the magnetic recording medium 310 that faces the metal particles 11, so that the portion can be efficiently heated.
  • the distance between the surface of the semiconductor layer facing the magnetic recording medium 310 in the near-field light device and the magnetic recording medium 310 is such that the energy intensity of the near-field light propagating in the air is such that the magnetic recording medium 310 Is set to a distance B which is a distance that becomes a valley (see FIG. 2).
  • the “distance B” according to the application example is another example of the “second distance” according to the present invention.
  • the magnetic head is attached to the tip of an arm not shown here.
  • the distance A and the distance B are realized by riding on the air flow generated by the rotation of the magnetic recording medium 310 and flying the magnetic head from the surface of the magnetic recording medium 310 at a certain height. Further, as a method of maintaining the distance A, a distance is measured by a photo sensor or the like (not shown), and a heater (not shown) provided at the tip of the arm is driven according to the measurement result to maintain the distance A. Also good.
  • the distance between the peaks and valleys should be adjusted according to the energy intensity of the near-field light propagating in the lubricant. , Distance A and distance B are set.
  • FIG. 10 is a perspective view showing a schematic configuration of an element having an optical circuit.
  • FIG. 11 is a diagram illustrating an example of a configuration of an optical waveguide inside the optical circuit.
  • FIG. 11 five optical waveguides Line1, Line2, Line3, Line4, and Line5 are provided in the optical circuit.
  • Fibers corresponding to input lines are connected to the input-side end portions In1, In2, In3, In4, and In5 of the optical waveguides Line1, Line2, Line3, Line4, and Line5.
  • output fibers corresponding to output lines are connected to the output-side ends Out1, Out2, and Out3 of the optical waveguides Line1, Line2, and Line5.
  • near-field light is used for optical connection between optical waveguides.
  • the distance between the optical waveguides to be optically connected is a distance at which the energy intensity of the near-field light propagating in the air becomes a mountain (see FIG. 2) in the optical waveguide to which the energy is to be propagated (see “Distance S see 1 "and” distance S 2 ").
  • the distance between the optical waveguides that are not desired to be optically connected is the distance at which the energy intensity of the near-field light propagating in the air becomes a valley in the adjacent optical waveguide (“distance W 1 ”, “distance W 2 ”). , “Distance W 3 ”, “Distance W 4 ”, “Distance W 5 ” and “Distance W 6 ”).
  • the optical waveguide Line2 and the optical waveguide Line3 are optically connected to each other at a portion that is a distance S 1.
  • the optical waveguide Line4 and the optical waveguide Line5, are optically connected to each other at a portion that is the distance S 2.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Recording Or Reproducing By Magnetic Means (AREA)
  • Optical Head (AREA)
  • Magnetic Heads (AREA)

Abstract

L'invention concerne un dispositif optique de champ proche pourvu d'un premier élément et d'un second élément. Un milieu constitué d'un matériau qui est différent des premier et second éléments est interposé entre le premier élément et le second élément. Lorsque le second élément est un élément qui reçoit de l'énergie au moyen d'une lumière de champ proche générée dans le premier élément, le second élément est séparé du premier élément selon une distance où l'énergie associée à la lumière de champ proche se propageant dans le milieu est presque au maximum. Lorsque le second élément est un élément qui ne reçoit pas d'énergie au moyen de la lumière de champ proche, le second élément est séparé du premier élément selon une distance où l'énergie associée à la lumière de champ proche se propageant dans le milieu est presque au minimum.
PCT/JP2012/070510 2012-08-10 2012-08-10 Dispositif optique et système optique de champ proche WO2014024306A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2012/070510 WO2014024306A1 (fr) 2012-08-10 2012-08-10 Dispositif optique et système optique de champ proche
JP2014529223A JPWO2014024306A1 (ja) 2012-08-10 2012-08-10 近接場光デバイス及びシステム

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2012/070510 WO2014024306A1 (fr) 2012-08-10 2012-08-10 Dispositif optique et système optique de champ proche

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WO2014024306A1 true WO2014024306A1 (fr) 2014-02-13

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015186240A1 (fr) * 2014-06-06 2015-12-10 パイオニア株式会社 Dispositif et appareil d'enregistrement

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006080459A (ja) * 2004-09-13 2006-03-23 Japan Science & Technology Agency ナノフォトニックデバイス
JP2007334936A (ja) * 2006-06-12 2007-12-27 Hitachi Ltd 近接場光発生器及び記録再生装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231601A (ja) * 2008-03-24 2009-10-08 Pioneer Electronic Corp 量子ドットの形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006080459A (ja) * 2004-09-13 2006-03-23 Japan Science & Technology Agency ナノフォトニックデバイス
JP2007334936A (ja) * 2006-06-12 2007-12-27 Hitachi Ltd 近接場光発生器及び記録再生装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015186240A1 (fr) * 2014-06-06 2015-12-10 パイオニア株式会社 Dispositif et appareil d'enregistrement
JPWO2015186240A1 (ja) * 2014-06-06 2017-04-20 パイオニア株式会社 デバイス及び記録装置
US10079032B2 (en) 2014-06-06 2018-09-18 Innovastella Co., Ltd Device and recording apparatus

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