WO2014015522A1 - Procédé et appareil de stockage d'informations dans un dispositif de stockage non volatil - Google Patents

Procédé et appareil de stockage d'informations dans un dispositif de stockage non volatil Download PDF

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Publication number
WO2014015522A1
WO2014015522A1 PCT/CN2012/079288 CN2012079288W WO2014015522A1 WO 2014015522 A1 WO2014015522 A1 WO 2014015522A1 CN 2012079288 W CN2012079288 W CN 2012079288W WO 2014015522 A1 WO2014015522 A1 WO 2014015522A1
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WIPO (PCT)
Prior art keywords
block
information
empty
area
signature
Prior art date
Application number
PCT/CN2012/079288
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English (en)
Chinese (zh)
Inventor
王文希
林青合
Original Assignee
青岛海信宽带多媒体技术有限公司
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Priority to PCT/CN2012/079288 priority Critical patent/WO2014015522A1/fr
Publication of WO2014015522A1 publication Critical patent/WO2014015522A1/fr

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory

Definitions

  • the present invention relates to memory technologies, and more particularly to a method and apparatus for storing information in a non-volatile memory device. Background technique
  • Non-volatile storage media are indispensable in a variety of smart products or devices. There are many media with storage functions, such as EPROM, EEPROM, Flash EEPROM, etc. Each storage medium is used in different technical fields according to its cost and performance. For example, a normal EEPROM is flexible and can be erased in a single byte, but a large-capacity EEPROM is very expensive and sized. Therefore,
  • FLASH EEPROM FLASH
  • FLASH FLASH EEPROM
  • it When using FLASH for storage, it usually operates with the entire block (memory block): For example, if you need to modify some bytes stored in FLASH, you need to erase the block where these bytes are located, and then Write the value that needs to be written.
  • Embodiments of the present invention provide a method and apparatus for storing information in a non-volatile memory device for avoiding the formation of "bad data" when an event such as an accidental power loss or a Reset occurs during an erasing process.
  • the area does not take too long to store information.
  • a method of storing information in a non-volatile memory device wherein the memory device comprises two blocks: a first block or a second block, the method comprising:
  • the second block is checked; if it is determined that one of the blocks is empty, the information to be stored is stored in one of the empty blocks; And erase the other block.
  • the method further includes: writing the signature information in the signature area of the block.
  • the method further includes:
  • the verification information is written in the check area of the block.
  • the method further includes: determining whether the information in the first block is valid; if the information in the first block is valid, reading the information in the first block as Block information; if the information in the first block is invalid, then:
  • Determining whether the information in the second block is valid if the information in the second block is valid, reading the information in the second block as the block information;
  • the block storing the information to be stored to one of the empty blocks is specifically:
  • an apparatus for storing information in a non-volatile memory device comprising:
  • the empty module is configured to check the first block; if it is determined that the first block is not empty, the second block is checked; wherein the first block or the second block is two blocks in the storage device.
  • the information storage module is configured to store the to-be-stored information in one of the empty blocks if it is determined that one of the blocks is empty; and perform an erase operation on the other block. Further, the information storage module is further configured to write signature information in a signature area of the block after storing the to-be-stored information in one of the empty blocks.
  • the information storage module is further configured to write verification information in the check area of the block after the signature information is written in the signature area of the block.
  • the device further includes:
  • An information reading module configured to determine whether the information in the first block is valid; if the information in the first block is valid, reading the information in the first block as the block information; if the information in the first block is invalid, determining Whether the information in the second block is valid; if the information in the second block is valid, the information in the second block is read as the Block information;
  • An information modification module configured to modify the block information according to the to-be-stored information; and the information storage module stores the to-be-stored information in one of the empty blocks, specifically: the information storage module to be modified
  • the Block information carrying the information to be stored is stored in one of the blocks that is empty.
  • information storage is performed by using two blocks in turn, and at the same time, one of the blocks is empty, that is, the value in the block is OxFF, and another block stores information.
  • one of the blocks is empty, that is, the value in the block is OxFF, and another block stores information.
  • the block for writing and storing information is not the same block as the block for performing the erasing operation, even if an unexpected situation occurs during a long-time erasing process, such as a power failure, the storage is not affected. Information to another block, so that the information stored in the Block is not affected.
  • FIG. 1 and 6 are flowcharts of a method for storing information in a nonvolatile memory device according to an embodiment of the present invention
  • Figure lb is a schematic diagram of a signature area and a check area in a block according to an embodiment of the present invention
  • Figures 2a, 2b, and 2c are schematic diagrams of storing information to Block_A according to an embodiment of the present invention
  • 2d is a schematic diagram of erasing Block_B after storing information to Block_A according to an embodiment of the present invention
  • FIG. 3a, 3b, and 3c are schematic diagrams for storing information to Block_B according to an embodiment of the present invention
  • FIG. 3d is a block diagram for storing Block_B according to an embodiment of the present invention. After the information, the schematic diagram of Block_A is erased
  • FIG. 4a, 4b, 4c are schematic diagrams of Block_A or Block_B storage abnormality according to an embodiment of the present invention
  • FIG. 5 is a method for reading information from a nonvolatile memory device according to an embodiment of the present invention
  • FIG. 7 is a block diagram showing the internal structure of an apparatus for storing information in a nonvolatile memory device according to an embodiment of the present invention.
  • a module can be, but is not limited to: a process running on a processor, a processor, an object, an executable, a thread of execution, a program, and/or a computer.
  • an application running on a computing device and this computing device can be modules.
  • One or more modules may be located within a process and/or thread of execution, and a module may be located on one computer and/or distributed between two or more computers.
  • the main idea of the present invention is to utilize two blocks in a non-volatile memory device to perform information storage in turn.
  • two blocks in a non-volatile memory device a first block (Block_A) and a second block (Block_B) are used to perform information storage in turn.
  • a first block (Block_A) and a second block (Block_B) are used to perform information storage in turn.
  • one of the blocks is empty, that is, the value in the block is OxFF, and another block stores information.
  • Flash it can be directly written by " ⁇ "0", and changed from "0" to "1". It needs to be erased before writing. So when there is information to be saved, first determine the non-volatileness.
  • Block_A or Block_B in the storage device is empty: for example, first check the first block; if it is determined that the first block is not empty, check the second block; if it is determined that one of the blocks is empty, The information to be stored is stored in one of the empty blocks; the other block is erased. Thus, before the information is stored in the empty block, the erasing operation is not necessary, thereby avoiding the erasing process. If an accidental power failure or an event such as Reset occurs, the entire block forms a "bad data"area; and, since only one block needs to be erased during the storage process, instead of the prior art method, two blocks need to be erased.
  • a non-volatile memory device is taken as an example of Flash, and a method for storing information in a non-volatile memory device is specifically described:
  • Block_A and Block_B are used to store information in turn.
  • the first area (or area A) and the second area (or area B) may be divided in the Flash, and the number of blocks included in the area A and the area B is equal; for example, in the area A and the area B There are N blocks (N is a natural number).
  • the mth block in area A corresponds to the mth block in area B, where m is a natural number less than N.
  • the two blocks in the area A and the area B can be stored in the block storage mode of the block_A and the block_B as shown in FIG.
  • step S101 Checking Block_A in Flash; if it is determined that Block_A is empty, step S102 is performed; otherwise, step S111 is performed;
  • Block_A and Block_B may be the corresponding two blocks in the above area A and area B.
  • Block_A is the nth block in area A
  • Block_B is the nth block in area B
  • Block_B is the nth in area A.
  • Block, Block_A is the nth block in area B, where n is a natural number less than N. That is, Block_A and Block_B are the two corresponding Blocks in Flash.
  • Block_A the nth block in area A or the nth block (Block_B) in area B can be stored; therefore, first for Block_A and Block_B performs a check.
  • the check of Block_A specifically includes: Judging whether Block_A is empty, that is, determining whether all values in Block_A are OXFF. If all values in Block_A are OXFF, then Block_A is judged to be empty; otherwise, 81( ⁇ 1 ⁇ _ is not empty.
  • S102 Store the information to be stored in Block_A.
  • Block_A If Block_A is empty, the information to be saved is written to Block_A.
  • each block in the Flash usually has M bytes (M can be 256 or 512), and the M bytes are divided into three areas: where, the first M-2 bytes
  • the storage information is called the information area; the M-1 byte is used to store the signature, which is called the signature area; the Mth byte is used to store the checksum (check information), which is called the check area. .
  • the signature in Block_A The name field writes the signature information, indicating that the block is successfully written; the signature information may be 0X00, or other values.
  • the verification information can also be written to the check area of Block_A.
  • the check information may specifically be a checksum of the first M-1 bytes in Block_A.
  • the check information in the Mth byte in Block_A is specifically obtained according to the following formula 1:
  • i l where the i-th byte refers to the i-th byte in Block_A.
  • Figures 2a, 2b, and 2c show the process of storing information to Block_A:
  • Block_A is empty
  • Figure 2b shows Block_A and Block_B after changing the value of 124 to 125, where the value of 125 is written to the empty Block_A
  • Figure 2c After the 125 value is written to Block_A, the signature information and the verification information are written in Block_A, where S represents signature information and C represents verification information.
  • step S103 After erasing Block_B, the process goes to step S151 to end the information storage process.
  • Block_B Since the erase operation of Block_B is performed after the information to be stored is stored in Block_A, even if an abnormality such as a power failure occurs during the erasure of Block_B, the information stored in Block_A is not affected. That is to say, this is different from the prior art. In the prior art, since the block is to be erased before the information is written, if the power is lost during the erasing process, the information cannot be directly stored into the block, thereby causing the block. The information in the error is incorrect.
  • Block_B Before erasing Block_B, it may first determine whether Block_B is empty; if Block_B is empty, it is not necessary to perform an erase operation, and directly jumps to step S151; if 81 0 ⁇ 8 is not empty, After the erase operation is performed on Block_B, the process proceeds to step S151, and the information storage process is ended. After erasing Block_B, all values in Block_B are OXFF.
  • Figure 2d shows that after writing a 125 value to Block_A, Block_B is erased to empty.
  • the check of Block_B specifically includes: Judging whether Block_B is empty, that is, determining whether all values in Block_B are OXFF. If all the values in Block_B are OXFF, then judge
  • Block_B is empty; otherwise, Block_B is not empty.
  • S112 Store the information to be stored in Block_B.
  • Block_B If Block_B is empty, the information to be saved is written to Block_B.
  • the signature area and the check area may also be included in the Block_B.
  • the signature information is written in the signature area of Block_B, indicating that the block is successfully written; and the verification information is written to the check area of Block_B.
  • the check information is specifically the checksum of the first M-1 bytes in Block_B.
  • the check information in the Mth byte in Block_B is specifically obtained according to the following formula 2:
  • i l where the i-th byte refers to the i-th byte in Block_B.
  • Figures 3a, 3b, 3c show the process of storing information to Block_B:
  • Block_B is empty;
  • Figure 3b shows Block_A and Block_B after changing the value of 123 to 124, where the value of 124 is written to the empty Block_B;
  • Figure 3c After the 124 value is written to Block_B, the signature information and the check information are written in Block_B, and SC in Fig. 3c represents the check information.
  • step S113 After erasing Block_A, the process goes to step S151 to end the information storage process.
  • Block_A Since the erase operation of Block_A is performed after the information to be stored is stored in Block_B, even if an abnormality such as a power failure occurs during the erasure of Block_A, the information stored in Block_B is not affected. That is to say, this is different from the prior art.
  • the block since the block is to be erased before the information is written, if the power is lost during the erasing process, the information cannot be directly stored into the block, thereby causing the block. The information in the error is incorrect.
  • Block_A After erasing Block_A, all values in Block_A are OXFF.
  • Figure 3d shows that after writing a 124 value to Block_B, Block_A is erased to empty.
  • Block_A and Block_B are empty, it indicates that an abnormal condition may occur during the last stored procedure. If the erase operation of Block_A or Block_B is not completed, the Block_B is erased, and after step S112, The above S112 and S113 will continue to be performed.
  • Figures 4a, 4b, and 4c show the case where 810 ⁇ or 81 0 ⁇ 8 stores an exception, respectively:
  • Figure 4a shows the case where the memory is accidentally powered down when the write information to Block_B is not completed, resulting in a storage exception;
  • Figure 4b shows The case where the memory is abnormally caused by the accidental power-down before the erase of the spare block 81 0 ⁇ is shown;
  • FIG. 4c shows the case where the memory is accidentally powered down during the erasing of the spare block Block_A to cause the storage abnormality.
  • S151 End the information storage process.
  • the non-volatile memory device may further include: a third block (or Block_C) for storing default information.
  • the default information is stored in Block_C for use when the data in Block_A and Block_B is corrupted.
  • the specific method flow is as shown in the figure. 5, including the following steps:
  • Whether the information in the Block_A is valid or not includes: first determining whether the signature area in the Block_A has signature information; if there is no signature information, determining that the information in the Block_A is invalid and cannot be read; if there is signature information, continuing the following judgment :
  • Block_A It is determined whether the verification information in the check area in Block_A is correct; if the verification information is correct, it is determined that the information in Block_A is valid and can be read; if the verification information is incorrect, it is determined that the information in Block_A is invalid, cannot Read.
  • step S502 After reading the information in the Block_A, the process goes to step S551 to end the information reading process.
  • the information in the Block_A After judging that the information in the Block_A is valid, the information is read from the Block_A into the RAM, and the flow jumps to step S551 to end the information reading process.
  • Block_A After judging that the information in Block_A is invalid, it is further determined whether the information in Block_B is valid.
  • the method for determining whether the information in the Block_B is valid is the same as the method for determining whether the information in the Block_A is valid in the above step S501, and specifically includes: first determining whether the signature area in the Block_B has signature information; if there is no signature information, determining that the Block_B is in the Block_B The information is invalid and cannot be read. If there is signature information, continue with the following judgment:
  • Block_B Determine whether the check information in the check area in Block_B is correct; if the check information is correct, it is determined that the information in Block_B is valid and can be read; if the check information is wrong, it is determined that the information in Block_B is invalid, cannot Read.
  • step S512 After reading the information in Block_B, the process goes to step S551 to end the information reading process. After judging that the information in the Block_B is valid, the information is read from the Block_B into the RAM, and the flow jumps to step S551 to end the information reading process.
  • step S521 After reading the default information from the Block_C, the process jumps to step S551 to end the information reading process.
  • Block_A and Block_B After it is determined that the information in Block_A and Block_B is invalid, in order to prevent the product or device from reading the wrong data, the program runs away or performs an error, so as to avoid serious consequences, the product or device can be read from Block_C.
  • the default information written at the factory is sent to RAM.
  • the flowchart of the method for storing information in the non-volatile storage device includes the following steps:
  • the specific method for reading the valid information may adopt the method shown in FIG. 5 above, that is, the method of steps S501-S551, and details are not described herein again.
  • this article will read the information in the RAM from the Block of Flash called Block information.
  • S602 Modify the information of the corresponding byte in the block information in the RAM.
  • the first byte in the block information is modified to the information to be stored.
  • the specific method flow for writing the modified Block information carrying the information to be stored into the Flash is similar to the method flow shown in FIG. 1 except that the information to be stored is stored in the Block_A in step S102.
  • the modified Block information carrying the information to be stored is stored in the Block_A; in Step S112, the information to be stored is stored in the Block_B as follows:
  • the modified Block information carrying the information to be stored is: Stored in Block_B; the other steps are basically the same, and will not be described here.
  • the method further includes: first determining whether there is signature information in the signature area of the Block_A; if there is signature information, determining that the Block_A is not empty; The signature information is further determined whether all the values in Block_A are OXFF. If all values in Block_A are OXFF, then Block_A is judged to be empty; otherwise, 81 ( ⁇ 1 ⁇ _ is not empty.
  • the check of Block_B in Flash may also be performed. Including: first determining whether there is signature information in the signature area of Block_B; if there is signature information, it is determined that Block_B is not empty; if there is no signature information, it is further determined whether all values in Block_B are OXFF. If all values in Block_B are OXFF, then it is determined that Block_B is empty; otherwise, 81 ( ⁇ 1 ⁇ _8 is not empty.
  • the device for storing information in the non-volatile storage device includes: a check module 701 and an information storage module 702.
  • the empty module 701 is configured to check the first block; if it is determined that the first block is not empty, the second block is checked; wherein the first block or the second block is two blocks in the storage device.
  • the storage device includes a first area and a second area, where the first area and the second area respectively include N blocks; the mth block in the first area corresponds to the mth block in the second area Where N is a natural number, m is a natural number less than N; and the first block and the second block are two corresponding blocks in the first area and the second area.
  • the information storage module 702 is configured to store the information to be stored into one of the blocks that is empty if it is determined that one of the blocks is empty; and perform an erase operation on the other block.
  • the information storage module 702 writes the signature information in the signature area of the block after storing the information to be stored in one of the blocks, and writes the verification information in the check area of the block.
  • the apparatus for storing information in the non-volatile storage device of the embodiment of the present invention further includes: an information reading module 703 and an information modification module 704.
  • the information reading module 703 is configured to determine whether the information in the first block is valid; if the information in the first block is valid, the information in the first block is read as the block information; if the information in the first block is invalid, Whether the information in the second block is valid; if the information in the second block is valid, the information in the second block is read as the Block information.
  • the information reading module 703 determines whether the information in the second block is valid, if the information in the second block is invalid, the default information stored in the third block is read as the block information; wherein, the third block is the A block in which the default information is stored in the storage device.
  • the information modification module 704 is configured to modify the block information according to the to-be-stored information.
  • the information of the information storage module 702 storing the information to be stored to one of the blocks is: the information storage module 702 stores the modified block information carrying the information to be stored to one of the blocks. Block.
  • the specific working process involved in each module in the apparatus for storing information in the non-volatile storage device may refer to the related disclosure in the method flow shown in the foregoing diagrams la, 5, and 6. Content, no more details here.
  • information storage is performed by using two blocks in turn, and at the same time, one of the blocks is empty, that is, the value in the block is OxFF, and another block stores information.
  • the block for writing and storing information is not the same block as the block for performing the erasing operation, even if an unexpected situation occurs during a long-time erasing process, such as a power failure, the storage is not affected. Information to another block, so that the information stored in the Block is not affected.

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Abstract

L'invention porte sur un procédé et un appareil de stockage d'informations dans un dispositif de stockage non volatil. Le dispositif de stockage comprend deux blocs : un premier bloc et un second bloc. Le procédé consiste à : déterminer si le premier bloc est ou non vide; s'il est déterminé que le premier bloc n'est pas vide, déterminer si le second bloc est ou non vide; s'il est déterminé que l'un des blocs est vide, stocker dans le bloc vide des informations à stocker; et effacer l'autre bloc. Les deux blocs sont utilisés en alternance pour stocker les informations, et il est assuré qu'un bloc est vide et que l'autre bloc stocke des informations. De cette manière, avant que des informations ne soient stockées dans le bloc vide, il n'est pas nécessaire d'effectuer une opération d'effacement, ce qui permet d'éviter un accident dans le processus d'effacement afin d'empêcher le bloc entier de former une zone de « mauvaises données ».
PCT/CN2012/079288 2012-07-27 2012-07-27 Procédé et appareil de stockage d'informations dans un dispositif de stockage non volatil WO2014015522A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112908390A (zh) * 2021-02-02 2021-06-04 深圳市显控科技股份有限公司 数据存储方法、装置、电子设备及存储介质

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030069671A1 (en) * 2001-10-09 2003-04-10 Honda Giken Kogyo Kabushiki Kaisha Vehicle controller for controlling rewriting data in a nonvolatile memory
CN101162608A (zh) * 2006-10-10 2008-04-16 北京华旗资讯数码科技有限公司 闪存的存储块的标识方法
CN102789426A (zh) * 2012-07-27 2012-11-21 青岛海信宽带多媒体技术有限公司 在非易失性存储器件中存储信息的方法和装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030069671A1 (en) * 2001-10-09 2003-04-10 Honda Giken Kogyo Kabushiki Kaisha Vehicle controller for controlling rewriting data in a nonvolatile memory
CN101162608A (zh) * 2006-10-10 2008-04-16 北京华旗资讯数码科技有限公司 闪存的存储块的标识方法
CN102789426A (zh) * 2012-07-27 2012-11-21 青岛海信宽带多媒体技术有限公司 在非易失性存储器件中存储信息的方法和装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112908390A (zh) * 2021-02-02 2021-06-04 深圳市显控科技股份有限公司 数据存储方法、装置、电子设备及存储介质

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