WO2014008682A1 - 有机发光二极管器件及相应的显示装置 - Google Patents

有机发光二极管器件及相应的显示装置 Download PDF

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Publication number
WO2014008682A1
WO2014008682A1 PCT/CN2012/079158 CN2012079158W WO2014008682A1 WO 2014008682 A1 WO2014008682 A1 WO 2014008682A1 CN 2012079158 W CN2012079158 W CN 2012079158W WO 2014008682 A1 WO2014008682 A1 WO 2014008682A1
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magnesium
silver
layer
copper alloy
emitting diode
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French (fr)
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寇浩
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US13/700,139 priority Critical patent/US9362529B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means

Definitions

  • the present invention relates to the field of organic electroluminescence, and in particular to an organic light emitting diode device and a corresponding display device capable of improving light extraction efficiency.
  • Liquid crystal display device liquid crystal Display
  • the display is perfect without external light. However, when there is external light (such as sunlight), the display effect will become very poor. Therefore, for this problem of liquid crystal display devices, an organic light emitting diode (OLED, organic) has been developed.
  • OLED organic light emitting diode
  • a display device comprising an anode, a cathode, and an organic emission layer disposed between the anode and the cathode. When the OLED display device is in operation, the holes of the anode and the electrons of the cathode recombine in the organic emission layer to form an electron-hole stimulator, and when the stimulator returns to the ground state, energy is released and light is emitted.
  • the OLED display device is a self-luminous display device. Compared with the liquid crystal display, the OLED display device has higher visibility and brightness, and a better display effect can be achieved when external light is present. At the same time, since the OLED display device does not need to separately set the color filter and the backlight module, it has the characteristics of lighter and thinner, high contrast, high color saturation, wide viewing angle, fast response and low energy consumption.
  • FIG. 1 is a schematic structural view of a prior art OLED device including a substrate 11, a metal anode 12, a transparent cathode 13, and an organic emission layer 14 disposed between the metal anode 12 and the transparent cathode 13, wherein the different organic emission layers 14 A spacer 18 is also provided between them.
  • the metal anode 12 herein is an opaque Ag electrode.
  • the metal anode 12 can also be used to reflect part of the light emitted from the organic emission layer 14 so that this portion of the light is emitted from the transparent cathode 13.
  • a reflective layer (not shown) may be disposed on the surface of the metal anode 12.
  • the material of the reflective layer is generally a silver palladium copper alloy, wherein the weight percentage of the silver element is 90%. -95%, the weight percentage of the palladium element ranges from 4% to 8%, and the weight percentage of the copper element is about 1%. Since the proportion of the precious metal silver is high, the cost of the reflective layer is too high.
  • the silver-palladium-copper alloy structure is a solid solution structure, and the metal atoms are solid-solution distribution in the material. In the preparation, the silver crystal grains tend to grow abnormally due to temperature, resulting in a rough surface of the reflective layer, which affects the light reflection efficiency of the reflective layer. , which in turn affects the light extraction efficiency of the corresponding display device.
  • An object of the present invention is to provide an organic light emitting diode device with low fabrication cost and high light extraction efficiency and a corresponding display device, which solves the problems of high production cost and low light extraction efficiency of the existing organic light emitting diode device and corresponding display device. Technical problem.
  • the present invention relates to an organic light emitting diode device comprising: a metal anode; an organic emission layer disposed on the metal anode; a transparent cathode disposed on the organic emission layer; and a reflective layer disposed between the metal anode and the organic emission layer, the reflective layer being a silver-magnesium-copper alloy layer; and the silver-magnesium-copper alloy layer
  • the weight percentage of the magnesium element ranges from 12% to 19%; the thickness of the silver-magnesium copper alloy layer ranges from 80 nm to 150 nm.
  • the weight percentage of magnesium element in the silver magnesium copper alloy layer ranges from 14% to 17%.
  • the silver magnesium copper alloy layer has a thickness ranging from 100 nm to 140 nm.
  • the organic light emitting diode device further includes a buffer layer disposed on the transparent cathode and a transparent protective layer disposed on the buffer layer.
  • the organic emission layer includes a blue organic emission layer, a green organic emission layer, and a red organic emission layer.
  • the present invention also relates to an organic light emitting diode device comprising: a metal anode; an organic emission layer disposed on the metal anode; a transparent cathode disposed on the organic emission layer; and a reflective layer disposed on the metal Between the anode and the organic emission layer, the reflective layer is a silver-magnesium-copper alloy layer.
  • the weight percentage of magnesium element in the silver magnesium copper alloy layer ranges from 12% to 19%.
  • the weight percentage of magnesium element in the silver magnesium copper alloy layer ranges from 14% to 17%.
  • the silver magnesium copper alloy layer has a thickness ranging from 80 nm to 150 nm.
  • the silver magnesium copper alloy layer has a thickness ranging from 100 nm to 140 nm.
  • the organic light emitting diode device further includes a buffer layer disposed on the transparent cathode and a transparent protective layer disposed on the buffer layer.
  • the organic emission layer includes a blue organic emission layer, a green organic emission layer, and a red organic emission layer.
  • the present invention also relates to a display device comprising: a plurality of organic light emitting diode devices including: a metal anode; an organic emission layer disposed on the metal anode; a transparent cathode disposed on the organic emission layer; and a reflection a layer disposed between the metal anode and the organic emission layer, the reflective layer being a silver-magnesium-copper alloy layer, and a driving circuit for controlling illumination of the plurality of organic light emitting diode devices.
  • a display device comprising: a plurality of organic light emitting diode devices including: a metal anode; an organic emission layer disposed on the metal anode; a transparent cathode disposed on the organic emission layer; and a reflection a layer disposed between the metal anode and the organic emission layer, the reflective layer being a silver-magnesium-copper alloy layer, and a driving circuit for controlling illumination of the plurality of organic light emitting diode devices.
  • the weight percentage of magnesium element in the silver-magnesium-copper alloy layer ranges from 12% to 19%.
  • the weight percentage of magnesium element in the silver-magnesium-copper alloy layer ranges from 14% to 17%.
  • the silver-magnesium-copper alloy layer has a thickness ranging from 80 nm to 150 nm.
  • the silver-magnesium-copper alloy layer has a thickness ranging from 100 nm to 140 nm.
  • the organic light emitting diode device further includes a buffer layer disposed on the transparent cathode and a transparent protective layer disposed on the buffer layer.
  • the organic emission layer includes a blue organic emission layer, a green organic emission layer, and a red organic emission layer.
  • the organic light emitting diode device and the corresponding display device of the invention have low manufacturing cost and high light extraction efficiency, and solve the existing organic light emitting diode device and corresponding display device.
  • FIG. 1 is a schematic structural view of a prior art organic light emitting diode device
  • FIG. 2 is a schematic structural view of a preferred embodiment of an organic light emitting diode device of the present invention
  • 3 is a schematic view showing surface roughness of a silver-magnesium-copper alloy layer having different contents of magnesium elements
  • Figure 5 is a schematic view showing the surface roughness of the silver-magnesium-copper alloy layer before heat treatment
  • FIG. 6 is a schematic view showing the surface roughness of the silver-magnesium-copper alloy layer after heat treatment
  • FIG. 7 is a schematic view showing the surface roughness of a silver palladium copper alloy layer before heat treatment
  • Figure 8 is a schematic view showing the surface roughness of the silver-palladium-copper alloy layer after heat treatment
  • Figure 9 is a reflectance map of silver-magnesium-copper alloy and silver-palladium-copper alloy at different wavelength bands.
  • FIG. 2 is a schematic structural view of a preferred embodiment of an organic light emitting diode device of the present invention.
  • the organic light emitting diode device includes a substrate 21, a metal anode 22, an organic emission layer 24, a transparent cathode 23, a reflective layer 25, a buffer layer 26, and a transparent protective layer 27.
  • the metal anode 22 is disposed on the substrate 21; the organic emission layer 24 is disposed on the metal anode 22; the transparent cathode 23 is disposed on the organic emission layer 24; and the buffer layer 26 is disposed on the transparent cathode 23 for surface of the organic light emitting diode device Flattening; a transparent protective layer 27 is disposed on the buffer layer 26 for reducing the influence of the external environment to which the organic light emitting diode device is exposed; the organic emission layer may include a blue organic emission layer, a green organic emission layer, and a red organic emission layer.
  • the different organic emissive layers are isolated by spacers 28.
  • the reflective layer 25 is disposed between the metal anode 22 and the organic emission layer 24 for reflecting the light emitted by the organic emission layer 24, so that the reflected light is emitted from the transparent cathode 23 side, thereby improving the light extraction efficiency of the organic light emitting diode device.
  • the reflective layer 25 is a silver-magnesium-copper alloy layer in which the weight percentage of the copper element in the silver-magnesium-copper alloy layer is about 1%, and the weight percentage of the magnesium element is in the range of 12% to 19%, preferably 14% to 17%.
  • the thickness of the silver-magnesium-copper alloy layer ranges from 80 nm to 150 nm.
  • the organic light emitting diode device of the present invention uses a silver-magnesium-copper alloy layer as the reflective layer 25.
  • the magnesium atom in the silver-magnesium-copper alloy layer is a close-packed hexagonal crystal structure, which can form a stable metal with silver atoms in the silver-magnesium copper alloy layer.
  • the compound phase makes the preparation of the silver-magnesium-copper alloy layer more stable.
  • the resulting stable silver-magnesium intermetallic compound can effectively pin and hinder the growth of silver crystal grains in the silver-magnesium-copper alloy layer due to the surface energy of the silver metal.
  • the surface of the silver-magnesium-copper alloy layer is more flat, and magnesium is similar to silver, and is a white-silver-like metal, which can greatly improve the reflection efficiency of light, thereby improving the display device. Light output efficiency.
  • the weight percentage of the magnesium element in the silver-magnesium-copper alloy layer is not too high or too low, and the weight percentage of the magnesium element is too high, which may result in failure to form silver atoms.
  • Stable silver-magnesium AgMg intermetallic compound but a two-phase mixture of AgMg and AgMg3.
  • the complex multi-structure will reduce the stability of the material during preparation and use.
  • the weight percentage of magnesium is too low.
  • the weight percentage of the silver element needs to be greatly increased (the copper doped here is a trace element, and the weight percentage is about 1%), so that the manufacturing cost of the reflective layer 25 is greatly increased.
  • the weight percentage of magnesium in the silver-magnesium-copper alloy layer ranges from 12% to 19%, and the weight percentage of the magnesium element in the silver-magnesium-copper alloy layer is The best is 14%-17%, as described below.
  • FIG. 3 is a schematic diagram showing the surface roughness of a silver-magnesium-copper alloy layer having different contents of magnesium.
  • a sample of 8 silver-magnesium-copper alloy layers having a weight percentage of magnesium in the silver-magnesium-copper alloy layer ranging from 12% to 19% is tested, and then each silver-magnesium-copper alloy layer sample is heat-treated, that is, the sample is placed It is heated in a nitrogen protection furnace at 250 ° C for one hour, and then taken out and then subjected to surface roughness test.
  • the weight percentage of magnesium in the silver-magnesium-copper alloy layer ranges from 14% to 17% of silver, magnesium and copper.
  • the alloy layer samples have lower roughness and better reflection performance.
  • the thickness of the silver-magnesium-copper alloy reflective layer of the present invention is preferably in the range of 80 nm to 150 nm. If the thickness of the silver-magnesium-copper alloy layer is too large, the surface roughness of the reflective layer 25 may be too high, so that the reflection efficiency of the reflective layer 25 is rather lowered. If the thickness of the silver-magnesium-copper alloy layer is too small, the light transmittance of the reflective layer 25 is increased, resulting in a decrease in the reflection efficiency of the reflective layer 25. It has been proved by experiments that the thickness of the silver-magnesium-copper alloy reflective layer ranges from 80 nm to 150 nm, which can achieve better results. When the thickness of the silver-magnesium-copper alloy reflective layer ranges from 100 nm to 140 nm, the following is the best, as follows: Said.
  • FIG. 4 is a reflectance spectrum of a silver-magnesium-copper alloy layer having different thicknesses. It can be seen from the figure that the silver-magnesium-copper alloy layer having a thickness of 100 nm to 140 nm has high reflectance and good reflection performance for both long-wavelength light and short-wavelength light.
  • FIGS. 5 to 8 The light reflection performance of the silver-magnesium-copper alloy reflective layer of the present invention is far superior to the prior art silver-palladium-copper alloy reflective layer by the corresponding test data of FIGS. 5 to 8.
  • 5 is a schematic view showing the surface roughness of the silver-magnesium-copper alloy layer before heat treatment
  • FIG. 6 is a schematic view showing the surface roughness of the silver-magnesium-copper alloy layer after heat treatment
  • FIG. 7 is a surface roughness of the silver-palladium-copper alloy layer before heat treatment
  • FIG. 8 is a schematic view showing the surface roughness of the silver-palladium-copper alloy layer after heat treatment.
  • the silver-palladium-copper alloy layer and the silver-magnesium-copper alloy layer are all prepared by sputtering method, and both have a thickness of 120 nm.
  • the surface roughness test using atomic mechanical microscope
  • the surface roughness value (Ra) of the silver magnesium copper alloy layer in FIG. 5 was 0.72 nm.
  • the surface roughness value of the silver-palladium-copper alloy layer in FIG. 7 is 0.84 nm, and it can be seen that the surface flatness of the silver-magnesium-copper alloy layer is superior to that of the silver-palladium-copper alloy layer in the case where the thickness of the reflective layer is the same.
  • the silver-palladium-copper alloy layer and the silver-magnesium-copper alloy layer were heat-treated, and they were placed in a nitrogen protection furnace at 250 ° C for one hour, and then taken out for surface roughness test, and the heat-treated silver-magnesium copper in FIG.
  • the surface roughness value of the alloy layer was 1.29 nm
  • the surface roughness value of the heat-treated silver palladium copper alloy layer in Fig. 8 was 2.71 nm.
  • the surface roughness of the silver-palladium-copper alloy layer is increased by more than three times, and the surface roughness of the silver-magnesium-copper alloy layer is only increased by less than 2 times, so the reliability or tolerance of the silver-magnesium-copper alloy layer is improved.
  • the properties are also superior to the silver palladium copper alloy layer.
  • FIG. 9 is a reflectance map of silver-magnesium-copper alloy and silver-palladium-copper alloy under different wavelength bands.
  • the silver palladium copper alloy layer and the silver magnesium copper alloy layer are also prepared by sputtering method, and both have a thickness of 120 nm.
  • the reflectance of the silver-magnesium-copper alloy layer is 95.3%, and the reflectance of the silver-palladium-copper alloy layer is 92.1%; for the yellow-green light of 550 nm, the reflectance of the silver-magnesium-copper alloy layer is 97.1%.
  • the reflectance of the silver palladium copper alloy layer was 94.6%; for the red light of 650 nm, the reflectance of the silver magnesium copper alloy layer was 97.9%, and the reflectance of the silver palladium copper alloy layer was 96.2%. From the 450 nm band to the 650 nm band, the silver-magnesium-copper alloy layer has better reflectivity than the silver-palladium-copper alloy layer.
  • the present invention also relates to a display device comprising a plurality of organic light emitting diode devices, comprising: a substrate; a metal anode disposed on the substrate; an organic emission layer disposed on the metal anode; a transparent cathode disposed on the organic emission layer; and a reflective layer disposed between the metal anode and the organic emission layer, the reflective layer being a silver-magnesium-copper alloy layer; and a driving circuit for controlling the A plurality of organic light emitting diode devices emit light.
  • the weight percentage of the magnesium element in the silver-magnesium-copper alloy layer is preferably in the range of 12% to 19%, and the weight percentage of the magnesium element in the silver-magnesium-copper alloy layer is preferably in the range of 14% to 17%, and the silver-magnesium-copper alloy layer
  • the preferred thickness range is from 80 nanometers to 150 nanometers.
  • the organic light emitting diode device and the corresponding display device of the present invention use metal magnesium instead of metal palladium to form an alloy reflective layer, which can greatly reduce the manufacturing cost of the reflective layer; and the silver magnesium copper alloy layer can be used as a reflective layer to increase the reflective layer.
  • the reliability, the tolerance and the reflection efficiency further improve the light extraction efficiency of the display device.
  • the invention solves the technical problems of high production cost and low light extraction efficiency of the existing organic light emitting diode device and the corresponding display device.

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Description

有机发光二极管器件及相应的显示装置 技术领域
本发明涉及有机电致发光领域，特别是涉及一种可提高出光效率的有机发光二极管器件及相应的显示装置。
 背景技术
液晶显示装置（LCD，liquid crystal display）在没有外界光的情况下，显示效果非常完美。但是当存在外界光时（如太阳光）,显示效果就会变得很差。因此，针对液晶显示装置的这个问题，开发了一种有机发光二极管（OLED，organic light emitting diodes）显示装置，该OLED显示装置包括阳极、阴极以及设置在阳极和阴极之间的有机发射层。该OLED显示装置工作时，阳极的空穴与阴极的电子在有机发射层内复合，从而形成电子-空穴的激励子，当激励子返回基态时，就会释放出能量进而发出光线。
因此OLED显示装置是一种自发光的显示装置，相对于液晶显示器，OLED显示装置的可视度和亮度更高，当存在外界光时也可达到较佳的显示效果。同时由于OLED显示装置不需要单独设置彩色滤光板及背光模组，因此其还具有更轻薄、高对比、高色彩饱和度、广视角、快速反应以及低能耗的特点。
图1为现有技术的OLED器件的结构示意图，其包括基板11、金属阳极12，透明阴极13以及设置在金属阳极12和透明阴极13之间的有机发射层14，其中不同的有机发射层14之间还设置有隔离子18。这里的金属阳极12为不透明的Ag电极，该金属阳极12除了作为电极使用外，还可用于将有机发射层14出射的部分光线反射，使这部分光线从透明阴极13射出。为了加强金属阳极12对光线的反射，也可在金属阳极12表面设置反射层（图中未示出），该反射层的材料一般为银钯铜合金，其中银元素的重量百分比范围为90%-95%，钯元素的重量百分比范围为4%-8%，铜元素的重量百分比为1%左右，由于贵金属银的比例很高，这样使得反射层的成本过高。同时银钯铜合金结构体系为固溶结构，金属原子在材料中为固溶分布，在制备中由于温度原因银晶粒容易异常增长，导致反射层表面较为粗糙，影响了反射层的光反射效率，进而影响了相应显示装置的出光效率。
故，有必要提供一种有机发光二极管器件及相应的显示装置，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种制作成本低、出光效率高的有机发光二极管器件及相应的显示装置,解决了现有的有机发光二极管器件及相应的显示装置的制作成本较高、出光效率较低的技术问题。
 技术解决方案
本发明涉及一种有机发光二极管器件，其包括：金属阳极；有机发射层，设置在所述金属阳极上； 透明阴极，设置在所述有机发射层上；以及反射层，设置在所述金属阳极与所述有机发射层之间，所述反射层为银镁铜合金层；所述银镁铜合金层中镁元素的重量百分比的范围为12%-19%；所述银镁铜合金层的厚度范围为80纳米至150纳米。
在本发明所述的有机发光二极管器件中，所述银镁铜合金层中镁元素的重量百分比的范围为14%-17%。
在本发明所述的有机发光二极管器件中，所述银镁铜合金层的厚度范围为100纳米至140纳米。
在本发明所述的有机发光二极管器件中，所述有机发光二极管器件还包括设置在所述透明阴极上的缓冲层以及设置在所述缓冲层上的透明保护层。
在本发明所述的有机发光二极管器件中，所述有机发射层包括蓝色有机发射层、绿色有机发射层以及红色有机发射层。
本发明还涉及一种有机发光二极管器件，其包括：金属阳极；有机发射层，设置在所述金属阳极上；透明阴极，设置在所述有机发射层上；以及反射层，设置在所述金属阳极与所述有机发射层之间，所述反射层为银镁铜合金层。
在本发明所述的有机发光二极管器件中，所述银镁铜合金层中镁元素的重量百分比的范围为12%-19%。
在本发明所述的有机发光二极管器件中，所述银镁铜合金层中镁元素的重量百分比的范围为14%-17%。
在本发明所述的有机发光二极管器件中，所述银镁铜合金层的厚度范围为80纳米至150纳米。
在本发明所述的有机发光二极管器件中，所述银镁铜合金层的厚度范围为100纳米至140纳米。
在本发明所述的有机发光二极管器件中，所述有机发光二极管器件还包括设置在所述透明阴极上的缓冲层以及设置在所述缓冲层上的透明保护层。
在本发明所述的有机发光二极管器件中，所述有机发射层包括蓝色有机发射层、绿色有机发射层以及红色有机发射层。
本发明还涉及一种显示装置，其包括：多个有机发光二极管器件，包括：金属阳极；有机发射层，设置在所述金属阳极上；透明阴极，设置在所述有机发射层上；以及反射层，设置在所述金属阳极与所述有机发射层之间，所述反射层为银镁铜合金层；以及驱动电路，用于控制所述多个有机发光二极管器件发光。
在本发明所述的显示装置中，所述银镁铜合金层中镁元素的重量百分比的范围为12%-19%。
在本发明所述的显示装置中，所述银镁铜合金层中镁元素的重量百分比的范围为14%-17%。
在本发明所述的显示装置中，所述银镁铜合金层的厚度范围为80纳米至150纳米。
在本发明所述的显示装置中，所述银镁铜合金层的厚度范围为100纳米至140纳米。
在本发明所述的显示装置中，所述有机发光二极管器件还包括设置在所述透明阴极上的缓冲层以及设置在所述缓冲层上的透明保护层。
在本发明所述的显示装置中，所述有机发射层包括蓝色有机发射层、绿色有机发射层以及红色有机发射层。
 有益效果
相较于现有的有机发光二极管器件及相应的显示装置，本发明的有机发光二极管器件及相应的显示装置制作成本低、出光效率高，解决了现有的有机发光二极管器件及相应的显示装置的制作成本较高、出光效率较低的技术问题。
 附图说明
图1为现有技术的有机发光二极管器件的结构示意图；
图2为本发明的有机发光二极管器件的优选实施例的结构示意图；
图3为具有不同含量镁元素的银镁铜合金层的表面粗糙度示意图；
图4为具有不同厚度的银镁铜合金层的反射率图谱；
图5为热处理前的银镁铜合金层的表面粗糙情况示意图；
图6为热处理后的银镁铜合金层的表面粗糙情况示意图；
图7为热处理前的银钯铜合金层的表面粗糙情况示意图；
图8为热处理后的银钯铜合金层的表面粗糙情况示意图；
图9为在不同波段下的银镁铜合金和银钯铜合金的反射率图谱。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
在图中，结构相似的单元是以相同标号表示。
请参照图2，图2为本发明的有机发光二极管器件的优选实施例的结构示意图。有机发光二极管器件包括基板21、金属阳极22、有机发射层24、透明阴极23、反射层25、缓冲层26以及透明保护层27。其中金属阳极22设置在基板21上；有机发射层24设置在金属阳极22上；透明阴极23设置在有机发射层24上；缓冲层26设置在透明阴极23上，用于使有机发光二极管器件表面平坦化；透明保护层27设置在缓冲层26上，用于减小有机发光二极管器件受到的外界环境的影响；有机发射层可包括蓝色有机发射层、绿色有机发射层以及红色有机发射层，不同的有机发射层之间通过隔离子28进行隔离。反射层25设置在金属阳极22与有机发射层24之间，用于反射有机发射层24发出的光线，使被反射的光线由透明阴极23侧射出，从而提高有机发光二极管器件的出光效率。该反射层25为银镁铜合金层，其中银镁铜合金层中铜元素的重量百分比为1%左右，镁元素的重量百分比的范围为12%-19%，优选为14%-17%。银镁铜合金层的厚度范围为80纳米至150纳米。
本发明的有机发光二极管器件使用银镁铜合金层作为反射层25，银镁铜合金层中的镁原子为密排六方晶体结构，能够与银镁铜合金层中的银原子生成稳定的金属间化合物相，使得银镁铜合金层的制备更加稳定。同时制备和使用银镁铜合金层时，生成的稳定的银镁金属间化合物能够有效钉扎和阻碍由于银金属表面能引起的，银镁铜合金层中银晶粒的增长。使得银镁铜合金层在制备和使用时，银镁铜合金层的表面都更加平整，同时镁与银类似，均为类白银色的金属，这样能够大大提高光线的反射效率，进而提高显示装置的出光效率。
使用本发明的银镁铜合金层作为反射层25时，镁元素在银镁铜合金层中的重量百分比不宜太高或太低，如镁元素的重量百分比过高，可能导致无法和银原子生成稳定的银镁AgMg金属间化合物，而是生成AgMg及AgMg3的两相混合物，复杂的多元结构会一定程度的降低了材料制备及使用过程中的稳定性；如镁元素的重量百分比过低，使得银元素的重量百分比需要大大增加（这里掺杂的铜为微量元素，重量百分比为1%左右），从而使得反射层25的制作成本大大提高。经试验证明，镁元素在银镁铜合金层中的重量百分比的范围为12%-19%时，可以达到较佳的效果，当采用镁元素在银镁铜合金层中的重量百分比的范围为14%-17%时最佳，具体如下所述。
请参照图3，图3为具有不同含量镁元素的银镁铜合金层的表面粗糙度示意图。其中对镁元素在银镁铜合金层中的重量百分比的范围为12%-19%的8个银镁铜合金层样品进行测试，然后对各银镁铜合金层样品进行热处理，即将上述样品放置于250℃的氮气保护炉中加热一小时，取出后再进行表面粗糙度测试，从图中可见，镁元素在银镁铜合金层中的重量百分比的范围为14%-17%的银镁铜合金层样品的粗糙度较低，反射性能较好。
同时本发明的银镁铜合金反射层的厚度范围最佳为80纳米至150纳米。如银镁铜合金层的厚度过大，则反射层25的表面粗糙度会过高，使得反射层25的反射效率反而降低。如银镁铜合金层的厚度过小，则反射层25的光透过率会提升，导致反射层25的反射效率降低。经试验证明，银镁铜合金反射层的厚度范围为80纳米至150纳米时，可以达到较佳的效果，当银镁铜合金反射层的厚度范围为100纳米至140纳米时最佳，具体如下所述。
请参照图4，图4为具有不同厚度的银镁铜合金层的反射率图谱。从图中可见，无论对于长波长的光还是短波长的光，厚度为100纳米至140纳米的银镁铜合金层的反射率均较高，反射性能较好。
下面通过图5至图8的相应的试验数据，说明本发明的银镁铜合金反射层的光反射性能远优越于现有技术的银钯铜合金反射层。其中图5为热处理前的银镁铜合金层的表面粗糙情况示意图，图6为热处理后的银镁铜合金层的表面粗糙情况示意图，图7为热处理前的银钯铜合金层的表面粗糙情况示意图，图8为热处理后的银钯铜合金层的表面粗糙情况示意图。
其中银钯铜合金层和银镁铜合金层均采用溅射法制得，两者的厚度均为120纳米。在进行热处理前，对银钯铜合金层和银镁铜合金层进行表面粗糙度测试（使用原子力学显微镜），图5中的银镁铜合金层的表面粗糙度值（Ra）为0.72纳米，图7中的银钯铜合金层的表面粗糙度值为0.84纳米，可见在反射层厚度相同的情况下，银镁铜合金层的表面平整度优于银钯铜合金层。随后对银钯铜合金层和银镁铜合金层进行热处理，将它们放置于250℃的氮气保护炉中加热一小时，取出后再进行表面粗糙度测试，图6中的热处理后的银镁铜合金层的表面粗糙度值为1.29纳米，图8中的热处理后的银钯铜合金层的表面粗糙度值为2.71纳米。可见经过热处理后，银钯铜合金层的表面粗糙度提高了3倍多，而银镁铜合金层的表面粗糙度只提高了不到2倍，因此银镁铜合金层的可靠性或耐受性也优于银钯铜合金层。
请参照图9，图9为在不同波段下的银镁铜合金和银钯铜合金的反射率图谱。其中银钯铜合金层和银镁铜合金层同样采用溅射法制得，两者的厚度均为120纳米。由图可见，对于450nm的蓝光，银镁铜合金层的反射率为95.3%，银钯铜合金层的反射率为92.1%；对于550nm的黄绿光，银镁铜合金层的反射率为97.1%，银钯铜合金层的反射率为94.6%；对于650nm的红光，银镁铜合金层的反射率为97.9%，银钯铜合金层的反射率为96.2%。从450纳米的波段至650纳米的波段，银镁铜合金层的反射率均优于银钯铜合金层。
本发明还涉及一种显示装置，该显示装置包括多个有机发光二极管器件，包括：基板；金属阳极，设置在所述基板上；有机发射层，设置在所述金属阳极上； 透明阴极，设置在所述有机发射层上；以及反射层，设置在所述金属阳极与所述有机发射层之间，所述反射层为银镁铜合金层；以及驱动电路，用于控制所述多个有机发光二极管器件发光。银镁铜合金层中镁元素的重量百分比的较佳范围为12%-19%，银镁铜合金层中镁元素的重量百分比的最佳范围为14%-17%，该银镁铜合金层的较佳厚度范围为80纳米至150纳米。
本发明的显示装置的具体实施方式和有益效果，与上述的有机发光二极管器件的具体实施例中描述的相同或相似，具体请参见上述有机发光二极管器件的具体实施例。
综上所述，本发明的有机发光二极管器件及相应的显示装置使用金属镁代替金属钯制作合金反射层，可大大降低反射层的制作成本；同时银镁铜合金层作为反射层可以增加反射层的可靠性、耐受性以及反射效率，进而提高了显示装置的出光效率。解决了现有有机发光二极管器件及相应的显示装置的制作成本较高、出光效率较低的技术问题。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
 本发明的实施方式
工业实用性
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Claims (19)

  1. 一种有机发光二极管器件，其包括：
    金属阳极；
    有机发射层，设置在所述金属阳极上；
    透明阴极，设置在所述有机发射层上；以及
    反射层，设置在所述金属阳极与所述有机发射层之间，
    所述反射层为银镁铜合金层；
    所述银镁铜合金层中镁元素的重量百分比的范围为12%-19%；
    所述银镁铜合金层的厚度范围为80纳米至150纳米。
  2. 根据权利要求1所述的有机发光二极管器件，其中所述银镁铜合金层中镁元素的重量百分比的范围为14%-17%。
  3. 根据权利要求1所述的有机发光二极管器件，其中所述银镁铜合金层的厚度范围为100纳米至140纳米。
  4. 根据权利要求1所述的有机发光二极管器件，其中所述有机发光二极管器件还包括设置在所述透明阴极上的缓冲层以及设置在所述缓冲层上的透明保护层。
  5. 根据权利要求1所述的有机发光二极管器件，其中所述有机发射层包括蓝色有机发射层、绿色有机发射层以及红色有机发射层。
  6. 一种有机发光二极管器件，其包括：
    金属阳极；
    有机发射层，设置在所述金属阳极上；
    透明阴极，设置在所述有机发射层上；以及
    反射层，设置在所述金属阳极与所述有机发射层之间，
    所述反射层为银镁铜合金层。
  7. 根据权利要求6所述的有机发光二极管器件，其中所述银镁铜合金层中镁元素的重量百分比的范围为12%-19%。
  8. 根据权利要求7所述的有机发光二极管器件，其中所述银镁铜合金层中镁元素的重量百分比的范围为14%-17%。
  9. 根据权利要求6所述的有机发光二极管器件，其中所述银镁铜合金层的厚度范围为80纳米至150纳米。
  10. 根据权利要求9所述的有机发光二极管器件，其中所述银镁铜合金层的厚度范围为100纳米至140纳米。
  11. 根据权利要求6所述的有机发光二极管器件，其中所述有机发光二极管器件还包括设置在所述透明阴极上的缓冲层以及设置在所述缓冲层上的透明保护层。
  12. 根据权利要求6所述的有机发光二极管器件，其中所述有机发射层包括蓝色有机发射层、绿色有机发射层以及红色有机发射层。
  13. 一种显示装置，其包括：
    多个有机发光二极管器件，包括：
    金属阳极；
    有机发射层，设置在所述金属阳极上；
    透明阴极，设置在所述有机发射层上；以及
    反射层，设置在所述金属阳极与所述有机发射层之间，
    所述反射层为银镁铜合金层；以及
    驱动电路，用于控制所述多个有机发光二极管器件发光。
  14. 根据权利要求13所述的显示装置，其中所述银镁铜合金层中镁元素的重量百分比的范围为12%-19%。
  15. 根据权利要求14所述的显示装置，其中所述银镁铜合金层中镁元素的重量百分比的范围为14%-17%。
  16. 根据权利要求13所述的显示装置，其中所述银镁铜合金层的厚度范围为80纳米至150纳米。
  17. 根据权利要求16所述的显示装置，其中所述银镁铜合金层的厚度范围为100纳米至140纳米。
  18. 根据权利要求13所述的显示装置，其中所述有机发光二极管器件还包括设置在所述透明阴极上的缓冲层以及设置在所述缓冲层上的透明保护层。
  19. 根据权利要求13所述的显示装置，其中所述有机发射层包括蓝色有机发射层、绿色有机发射层以及红色有机发射层。
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