WO2014006566A1 - Agencement d'électrodes pour des composants électro-optiques - Google Patents

Agencement d'électrodes pour des composants électro-optiques Download PDF

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Publication number
WO2014006566A1
WO2014006566A1 PCT/IB2013/055426 IB2013055426W WO2014006566A1 WO 2014006566 A1 WO2014006566 A1 WO 2014006566A1 IB 2013055426 W IB2013055426 W IB 2013055426W WO 2014006566 A1 WO2014006566 A1 WO 2014006566A1
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Prior art keywords
layer
optoelectronic component
component according
transport layer
further embodiment
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PCT/IB2013/055426
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German (de)
English (en)
Inventor
Christian Uhrich
Toni MÜLLER
Rico Meerheim
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Heliatek Gmbh
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Publication of WO2014006566A1 publication Critical patent/WO2014006566A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • Electrode Arrangement for Optoelectronic Components The invention relates to a transparent electrode for optoelectronic components.
  • Optoelectronic components such as solar cells or LEDs, TFTs, etc. are now widely used in everyday and industrial environments. Of particular interest in this case are those components which, due to their configuration, allow an arrangement on curved curved surfaces.
  • thin-film solar cells which have a flexible configuration and thus allow an arrangement on curved surfaces.
  • Solar cells preferably have active layers of amorphous silicon (-Si) or CIGS (Cu (In, Ga) (S, Se) 2 ).
  • OLEDs organic light emitting diodes
  • solar cells with organic active layers which are flexible
  • the organic active layers can be composed of polymers (eg US7825326 B2) or small molecules (eg EP 2385556 A1). While polymers are characterized by the fact that they are not volatile and therefore only applied from solutions can, small molecules are vaporizable.
  • a solar cell converts light energy into electrical energy.
  • the term photoactive also refers to the conversion of light energy into electrical energy. in the
  • solar cells In contrast to inorganic solar cells, solar cells do not directly generate free charge carriers by light, but excitons are first formed, ie electrically neutral excitation states (bound electron-hole pairs). Only in a second step, these excitons are separated into free charge carriers, which then contribute to the electric current flow.
  • n or p denotes an n- or p-type doping, which leads to an increase in the density of free electrons or holes in the thermal equilibrium state.
  • the n-type layer (s) or p-type layer (s) are at least partially nominally undoped and only due to the material properties (e.g.
  • Ambient atmosphere preferably n-conductive or preferably p-conductive properties.
  • such layers are primarily to be understood as transport layers.
  • the term i-layer designates a nominally undoped layer (intrinsic layer).
  • One or more i-layers may in this case be layers of a material as well as a mixture of two materials (so-called interpenetrating networks or bulk heterojunction, M. Hiramoto et al., Mol., Cryst., Liq., Cryst., 2006, 444). pp. 33-40).
  • the light incident through the transparent base contact generates excitons (bound electron-hole pairs) in the i-layer or in the n- / p-layer.
  • the separating interface may be between the p (n) layer and the i-layer or between two i-layers.
  • the electrons are now transported to the n-area and the holes to the p-area.
  • the transport layers are transparent or
  • Thin films certainly fulfill this criterion.
  • the use of monocrystalline organic materials is not possible and the production of multiple layers with sufficient Structural perfection is still very difficult.
  • the task of absorbing light either takes on only one of the components or both.
  • the advantage of mixed layers is that the generated excitons only travel a very short distance until they reach a domain boundary where they are separated.
  • the doped layers are used as injection layers at the interface to the contact materials in
  • Tandemsolarzellen Hiramoto, Chem. Lett., 1990, 327 (1990).
  • the tandem cell of Hiramoto et al. There is a 2nm thick gold layer between the two single cells. The task of this gold layer is for a good electrical connection between the two single cells to ensure: the gold layer causes an efficient
  • the gold layer absorbs like any thin layer
  • the gold layer should be as thin as possible, or in the best case completely eliminated.
  • Organic pin tandem cells are also known from the literature (DE 102004014046): The structure of such a tandem cell consists of two single-pin cells, the layer sequence "pin” being the sequence of a p-doped one
  • doped layer systems are preferably made
  • Materials / layers and they may also be partially or wholly undoped or location-dependent different doping concentrations or over a
  • Transport layer in the border region to the active layers or in tandem or multiple cells in the border region to the adjacent pin or nip-Teilzelle, i. in the recombination zone are possible. Also any
  • tandem cell may also be a so-called inverted structure (e.g., nip tandem cell)
  • Tandem cell implementation forms with the term pin tandem cells called.
  • An advantage of such a pin tandem cell is that the use of doped transport layers makes a very simple and simple process
  • the tandem cell has e.g. a pin-pin structure on (or also possible, for example, nipnip).
  • nipnip At the interface between the two pin sub-cells are each an n-doped layer and a p-doped layer, which form a pn system (or np system).
  • the object is achieved by a device according to the
  • an optoelectronic component a substrate which comprises a first and a second electrode, wherein the first electrode is arranged on the substrate and the second electrode a
  • At least one photoactive layer system is arranged between these electrodes, wherein between the counter electrode and the photoactive layer system at least one transport layer is arranged, characterized in that between the
  • Hole transport layer an electron transport layer is arranged.
  • photoactive layer system a donor-acceptor system with organic materials.
  • Electron transport layer at least one organic compound
  • the electron transport layer contains at least one fullerene.
  • the electron transport layer contains an inorganic material.
  • the electron transport layer has an n-type doping.
  • the counter electrode contains at least one layer which is arranged in the direction of the electron transport layer and comprises at least one metal.
  • the at least one layer of the counter electrode which in
  • Direction of the electron transport layer is arranged Ag, Au, Pt, Cr, Ti, Al, Zr, Cu, Zn, Sn, Sr, La, In, Sc, Hf or alloys of at least one of the aforementioned elements.
  • the at least one layer of the counter electrode which in
  • Direction of the electron transport layer is disposed, a mixed layer, Ag, Au, Pt, Cr, Ti, Al, Zr, Cu, Zn, Sn, Sr, La, In, Sc, Hf or alloys and an alkali or alkaline earth metal, a metal oxide or an organic one
  • the at least one layer of the counter electrode which in
  • Direction of the electron transport layer is arranged, a mixed layer Ag and Ca.
  • Electron transport layer arranged.
  • Electron transport layer arranged, wherein the
  • Interlayer an alkali or alkaline earth metal, a
  • Metal oxide or an organic material comprises.
  • Electron transport layer arranged, wherein the
  • Electron transport layer arranged, wherein the
  • Interlayer a layer thickness of 0.5nm to 5nm.
  • Another embodiment of the invention is the Hole transport layer formed of an organic or inorganic material, wherein the
  • Hole transport layer is undoped or p-doped.
  • the optoelectronic component is an organic solar cell.
  • the component has the following structure:
  • the device has the following structure:
  • Electrode / (n-doped) electron transport layer / donor-acceptor system / (p-doped) hole transport layer / (n-doped) electron transport layer / counter electrode Suitable materials for the electrode are selected from a group consisting of: ITO; Metal nanowire;
  • Metal layer thin, transparent metal layer
  • Suitable donor materials are, for example:
  • Phthalocanine (ZnPc, CuPc, etc.); naphthalocyanine; Sub-naphthalocyanine; ADA oligothiophene; oligothiophene; DA-oligothiophene; Merocyanine.
  • Suitable acceptor materials include:
  • Fullerene derivative (C60; C70; PCBMC60; PCBMC70; ...), perylene derivative (PTCDA; MePTCDI; etc.); NTCDA (1,4,5,8-naphthalenetetracarboxylic dianhydride); PTCDA; NDCA; BPDCA
  • the donor-acceptor system is a combination Donor and acceptor in the form of successive
  • Suitable materials of the electron transport layer are, for example: fullerene derivative (C 6 o, C 10 , PCBMC 6 o, PCBMC70, etc.), perylene derivative (PTCDA, MePTCDI, etc.) and / or mixed layers. );
  • NTCDA (1,4,5,8-naphthalenetetracarboxylic dianhydride
  • Suitable materials of the hole transport layer are, for example:
  • Suitable p-dopants are, for example: F4-TCNQ;
  • fluorinated fullerene F36C60; F48C60.
  • the component consists of a combination of nip, ni, ip, pnip, pni, pip, nipn, nin, ipn, pnipn, pnin or pipn structures, in which a plurality of independent combinations comprising at least one i Layer are stacked on top of each other.
  • the substrate is made transparent.
  • the substrate is made flexible. Under a flexible substrate is in the sense of
  • a substrate understood which is a deformability due to external force
  • Flexible substrates are, for example, films or metal strips.
  • the electrode which is arranged on the substrate is made opaque.
  • the electrode is arranged on the substrate
  • the electrode which is arranged on the substrate comprises a
  • Metal Metal, metal alloy, metal oxide, metal grid, metal-metal oxide layer system, metal particles, metal nanowires, graphene or an organic semiconductor.
  • the active layer comprises at least one mixed layer having at least two main materials which form a photoactive donor-acceptor system.
  • At least one main material is an organic material.
  • the organic material is small molecules.
  • small molecules is understood to mean monomers which evaporate and thus on the
  • Substrate can be deposited.
  • the organic material is at least partially polymers.
  • At least one of the active mixed layers comprises as acceptor a material from the group of fullerenes or
  • At least one of the electrode and the counterelectrode is provided
  • Transport layer arranged.
  • a doped, partially doped or undoped one is present between the counterelectrode and the photoactive layer system
  • Transport layer is arranged.
  • the component is at least somewhat
  • the device is colored in the human eye
  • the optoelectronic component is an organic solar cell.
  • Optoelectronic component an organic light emitting diode.
  • the component is a pin single, pin tandem cell, pin multiple cell, nip single cell, nip tandem cell or nip multiple cell.
  • the component consists of a combination of nip, ni, ip, pnip, pni, pip, nipn, nin, ipn, pnipn, pnin or pipn structures, in which a plurality of independent combinations comprising at least one i Layer are stacked on top of each other.
  • the invention also provides an electrode device comprising a layer system comprising at least one first
  • the invention also relates to the use of an electrode device in an optoelectronic component.
  • the optoelectronic component has more than one photoactive layer between the electrode and the counterelectrode.
  • the active layers of the component absorb as much light as possible.
  • the spectral range in which the component absorbs light designed as wide as possible.
  • the active layer system of the optoelectronic component consists of at least two mixed layers, which are direct
  • Each mixed layer consists of at least two main materials which form a photoactive donor-acceptor system.
  • the donor-acceptor system is characterized in that, at least for the photoexcitation of the donor component, the excitons formed at the interface to the acceptor are preferably separated into a hole on the donor and an electron on the acceptor.
  • Main material refers to a material ⁇ its volume or mass fraction in the layer is greater than 16%.
  • the component contains three or four different absorber materials, so that it can cover a spectral range of approximately 600 nm or approximately 800 nm.
  • Double mixed layer can also be used to achieve significantly higher photocurrents for a given spectral range by mixing materials that preferentially absorb in the same spectral range. This can then be used in the following to adjust the current in a tandem solar cell or multiple solar cell
  • the Mixed layers preferably from two main materials.
  • the optoelectronic component is designed as a tandem cell and it consists by the use of double or
  • the individual materials may be positioned in different maxima of the light distribution of the characteristic wavelengths which this material absorbs. For example, a material in a mixed layer in the second.
  • the optoelectronic component in particular an organic solar cell, consists of an electrode and a counterelectrode and, between the electrodes, at least two organic active mixed layers, the mixed layers each being in the
  • the two main materials consist essentially of two materials and the two main materials each form a mixed layer donor acceptor system and the two mixed layers directly adjacent to each other and at least one of the two main materials of a mixed layer another
  • Organic material is considered the two main materials of another mixed layer.
  • several or all of the main materials of the mixed layers are different from one another.
  • one or more of the further organic layers are doped wide-gap layers, the maximum of the absorption being ⁇ 450 nm.
  • at least two main materials of the mixed layers are doped wide-gap layers, the maximum of the absorption being ⁇ 450 nm.
  • the main materials of the mixed layers have different optical absorption spectra, which complement each other to cover the widest possible spectral range.
  • the absorption region extends at least one of
  • the absorption region extends at least one of
  • the HOMO and LUMO levels of the main materials are adjusted so that the system allows for maximum open circuit voltage, maximum short circuit current, and maximum fill factor.
  • at least one of the photoactive mixed layers contains as acceptor a material from the group of fullerenes or
  • Fullerene derivatives (eo, C 7 o, etc.).
  • all photoactive compound layers contain as an acceptor a material from the group of fullerenes or fullerene derivatives (C6o, C 7 o, etc.).
  • At least one of the photoactive mixed layers contains as donor a material from the class of phthalocyanines,
  • At least one of the photoactive mixed layers contains as acceptor the material fullerene and as donor the material 4P-TPD.
  • the electrode consists of metal, a conductive oxide, in particular ITO, ZnO: Al or other TCOs or a conductive
  • Polymer in particular PEDOT: PSS or PA I.
  • polymer solar cells which comprise two or more photoactive mixed layers are also included, the mixed layers being directly adjacent to one another.
  • the materials are applied from solution and thus a further applied layer very easily causes the underlying layers to be dissolved, dissolved or changed in their morphology.
  • polymer solar cells therefore, only a very limited multiple mixed layers can be produced and only by the fact that different material and solvent systems are used, which in the production of each other hardly or hardly
  • Multiple mixed layer structure can be used very widely and can be realized with any combination of materials.
  • electron-conducting layer (n-layer) and the electrode located on the substrate is still a p-doped layer, so that it is a pnip or pni structure, wherein preferably the doping is chosen so high that the direct pn Contact has no blocking effect, but it comes to low-loss recombination, preferably through a tunneling process.
  • a p-doped layer may be present in the device between the active layer and the electrode located on the substrate, so that it is a pip or pi structure, wherein the additional p-doped layer a Fermi level, which is at most 0.4 eV, but preferably less than 0.3 eV below the electron transport level of the i-layer, so that it is too low-loss
  • Electron extraction can come from the i-layer in this p-layer.
  • an n-layer system is still present between the p-doped layer and the counterelectrode, so that it is a nipn or ipn structure, wherein preferably the doping is chosen to be so high that the direct pn Contact none
  • Recombination preferably by a tunneling process.
  • the photoactive layer and the counterelectrode so that it is a nin- or in-structure, wherein the additional n-doped layer has a Fermiislage which is not more than 0.4 eV, but preferably less than 0.3 eV above the Lochertransportnivaus the i-layer is located, so that there may be lossy hole extraction from the i-layer in this n-layer.
  • Component is that the device contains an n-layer system and / or a p-layer system, so that it is a pnipn, pnin, pipn or pin structure, which are characterized in all cases in that - regardless of Conduction type - the layer adjacent to the photoactive i-layer on the substrate side has a lower thermal work function than that of the substrate
  • a plurality of conversion contacts are connected in series, so that e.g. is an npnipn, pnipnp, npnipnp, pnpnipnpn or pnpnpnipnpnpn structure.
  • these are designed as organic tandem solar cell or multiple solar cell. So it may be at the
  • Component to a tandem cell of a combination of nip, ni, ip, pnip, pni, pip, nipn, nin, ipn, pnipn, pnin or pipn structures act in which several independent combinations containing at least one i-layer, one above the other are stacked (cross combinations).
  • this is a pnipnipn tandem cell
  • the acceptor material is at least partially in the mixed layer
  • the donor material in the blend layer is at least partially in crystalline form.
  • both are
  • the acceptor material has an absorption maximum in the wavelength range> 450 nm.
  • another embodiment has the donor Material over an absorption maximum in the wavelength range> 450nm.
  • the active contains
  • the n-material system consists of one or more layers.
  • the p-material system consists of one or more layers. In another embodiment, the n-material system consists of one or more layers.
  • Material system one or more doped wide-gap
  • Material system one or more doped wide-gap
  • the component between the first electron-conducting layer (n-layer) and the electrode located on the substrate contains a p-doped layer, so that it is a pnip or pni structure.
  • the device between the photoactive i-layer and the electrode located on the substrate contains a p-doped layer, so that it is a pip or pi structure, wherein the
  • the additional p-doped layer has a Fermi level position which is at most 0.4 eV, but preferably less than 0.3 eV, below the electron transport level of the i-layer.
  • the component contains an n-layer system between the p-doped layer and the counterelectrode, so that it is a nipn or ipn structure.
  • the component contains an n-layer system between the photoactive i-layer and the counterelectrode, so that it is a n or in ⁇ structure, wherein the additional n-doped layer has a Fermicertainlage which is at most 0, 4eV, but preferably less than 0.3eV is above the hole transport level of the i-layer.
  • the component contains an n-layer system and / or a p-layer system, so that it is a pnipn, pnin, pipn or p-i-n structure.
  • the additional p-material system and / or the additional n-material system contains one or more doped wide-gap layers.
  • the component contains further n-layer systems and / or p-layer systems, such as e.g. is an npnipn, pnipnp, npnipnp, pnpnipnpn, or pnpnpnipnpnpn structure.
  • one or more of the further p-material systems and / or the further n-material systems contains one or more doped wide-gap
  • the device is a tandem cell of a combination of nip, ni, ip, pnip, pni, pip, nipn, nin, ipn, pnipn, pnin or pipn structures.
  • the organic materials at least partially to polymers, but at least one photoactive i-layer is formed of small molecules.
  • the p-type material system contains a TPD derivative (triphenylamine dimer), a spiro compound such as spiropyrane, spiroxazine, MeO-TPD ( ⁇ , ⁇ , ⁇ ', ⁇ '-tetrakis (4-methoxyphenyl) - benzidine), di-NPB ( ⁇ , ⁇ '-di (1-naphthyl) -N, N'-diphenyl- (1, 1'-biphenyl) 4, 4'-diamines), MTDATA (4, 4 ', 4 "-tris ( N-3-methylphenyl-N-phenyl-amino) -triphenylamine), TNATA
  • TPD derivative triphenylamine dimer
  • MeO-TPD ⁇ , ⁇ , ⁇ ', ⁇ '-tetrakis (4-methoxyphenyl) - benzidine
  • di-NPB ⁇ , ⁇ '-di (1-
  • Material system fullerenes such as ⁇ , C70; NTCDA (1,4,5,8-naphthalene-tetracarboxylic dianhydride), NTCDI (naphthalenetetracarboxylic diimide) or PTCDI (perylene-3,4,9,10-bis (dicarboximide)
  • NTCDA 1,4,5,8-naphthalene-tetracarboxylic dianhydride
  • NTCDI naphthalenetetracarboxylic diimide
  • PTCDI perylene-3,4,9,10-bis (dicarboximide
  • the n- Material system an n-dopant
  • said n-dopant is a TTF derivative (tetrathiafulvalene derivative) or DTT derivative (dithienothiophene), an n-dopant as described in DE10338406,
  • the organic materials used have a low melting point, preferably ⁇ 100 ° C, on.
  • the organic materials used have a low
  • Glass transition temperature preferably ⁇ 150 ° C, on.
  • the optical path of the incident light in the active system is increased.
  • the component is designed as an organic pin solar cell or organic pin tandem solar cell.
  • a tandem solar cell while a solar cell is referred to, which consists of a vertical stack of two series-connected solar cells.
  • the light trap is realized in that the component is constructed on a periodically microstructured substrate and the homogeneous function of the component, ie a short-circuit-free
  • Ultrathin components have an increased risk of forming local short circuits on structured substrates, such that ultimately the functionality of the entire component is jeopardized by such obvious inhomogeneity. This risk of short circuit is caused by the
  • the light trap is realized in that the component is constructed on a periodically microstructured substrate and the homogeneous function of the component whose
  • Short-circuit-free contacting and a homogeneous distribution of the electric field over the entire surface is ensured by the use of a doped wide-gap layer. It is particularly advantageous that the light the
  • pyramid-like structures on the surface having heights and widths in the range of one to several hundred micrometers, respectively. Height and width can be chosen the same or different. Likewise, the pyramids can be constructed symmetrically or asymmetrically. In a further embodiment of the invention, the
  • Light trap realized by a doped wide-gap layer has a smooth interface with the i-layer and a rough interface to the reflective contact.
  • interface can be defined by a periodic
  • Microstructuring can be achieved. Particularly advantageous is the rough interface when it reflects the light diffused, resulting in an extension of the light path within the photoactive layer.
  • the light trap is realized in that the component is built up on a periodically microstructured substrate and a
  • doped wide-gap layer a smooth interface with the i-layer and a rough interface to the reflective
  • the overall structure of the optoelectronic component is provided with transparent base and cover contact.
  • Solar cells can be applied to flexible substrates such as films, textiles, etc.
  • FIG. 1 shows a schematic representation of a first
  • Fig. 2 is a schematic representation of a second
  • FIG. 3 shows the current-voltage curve of a component with a counter electrode according to the invention in comparison to an identical component with a non-inventive counter electrode and in
  • Dashed line indicates the dark curve and the solid line indicates the current-voltage curve under illumination.
  • an optoelectronic component 1 such as a solar cell, is shown in FIG.
  • the optoelectronic component 1 is arranged on a substrate 2 and comprises a first and a second electrode 3, 4, the first electrode 3, for example ITO, being arranged on the substrate 2 and the second electrode 4 being a counter electrode
  • Electrodes 3, 4, at least one photoactive layer system 5 is arranged.
  • the photoactive layer system 5 comprises, for example, at least one donor-acceptor system with organic materials, such as ZnPc: C6o- Furthermore, between the counter electrode 4 and the photoactive
  • Layer system 5 at least one transport layer 6 is arranged.
  • MeO-TPD F4TCNQ.
  • Transport layer 6 an electron transport layer. 7
  • Electrode 3 which is made for example of a nanowire wire mesh and the photoactive layer 5, which comprises about C60: ZnPc, a
  • Electron transport layer 8 is arranged.
  • Electron-transport layer 8 comprises, for example, C60: AOB.
  • a sample is placed on glass once according to the invention with an ETL between the
  • the layer structure corresponds to a pnip single cell on a substrate with ITO electrode, im
  • Substrate Glass electrode: ITO - p-doped
  • Hole transport layer - 3a n-doped
  • Electron transport layer - counter electrode Ag.
  • FIG. 3 shows the current-voltage curve of the two samples 3a (solid line) and 3b (dashed line), which clearly show that device 3a according to the invention shows significantly higher performance and efficiency than
  • Substrate Glass electrode: ITO - p-doped
  • Transport layer - absorber mixture layer 1: 1 acceptor / donor - p-doped hole transport layer - n-doped
  • Electron transport layer n-C60 - Interlayer: Ca - Counterelectrode: 1: 1 Ag / Ca - organic coupling layer.

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  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
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Abstract

L'invention concerne un composant électro-optique appliqué sur un substrat (2) et comprenant une première (3) et une deuxième (4) électrode, la première électrode étant disposée sur un substrat et la deuxième électrode formant une contre-électrode, au moins un système de couches photo-actives (5) intercalé entre ces électrodes comportant au moins un système donneur-accepteur ayant des matières organiques.
PCT/IB2013/055426 2012-07-02 2013-07-02 Agencement d'électrodes pour des composants électro-optiques WO2014006566A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012105812.1 2012-07-02
DE102012105812.1A DE102012105812A1 (de) 2012-07-02 2012-07-02 Elektrodenanordnung für optoelektronische Bauelemente

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WO2022079211A1 (fr) 2020-10-16 2022-04-21 Adc Therapeutics Sa Glycoconjugués
WO2022081895A1 (fr) 2020-10-16 2022-04-21 University Of Georgia Research Foundation, Inc. Glycoconjugués

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Publication number Priority date Publication date Assignee Title
GB2589174A (en) * 2019-07-24 2021-05-26 Rockley Photonics Ltd Electro-optic modulator
GB2589174B (en) * 2019-07-24 2022-06-15 Rockley Photonics Ltd Electro-optic modulator
WO2022079211A1 (fr) 2020-10-16 2022-04-21 Adc Therapeutics Sa Glycoconjugués
WO2022081895A1 (fr) 2020-10-16 2022-04-21 University Of Georgia Research Foundation, Inc. Glycoconjugués

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