WO2008077615A1 - Composant électronique avec au moins un agencement de couches organiques - Google Patents

Composant électronique avec au moins un agencement de couches organiques Download PDF

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WO2008077615A1
WO2008077615A1 PCT/EP2007/011353 EP2007011353W WO2008077615A1 WO 2008077615 A1 WO2008077615 A1 WO 2008077615A1 EP 2007011353 W EP2007011353 W EP 2007011353W WO 2008077615 A1 WO2008077615 A1 WO 2008077615A1
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layer
semiconductor material
organic semiconductor
anode
organic
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PCT/EP2007/011353
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German (de)
English (en)
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Tobias Canzler
Olaf Zeika
Philipp Wellmann
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Novaled Ag
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Priority claimed from EP06026743A external-priority patent/EP1808910B1/fr
Application filed by Novaled Ag filed Critical Novaled Ag
Priority to US12/519,912 priority Critical patent/US20120025171A1/en
Priority to JP2009541910A priority patent/JP2010514174A/ja
Publication of WO2008077615A1 publication Critical patent/WO2008077615A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/26—Diodes comprising organic-organic junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/331—Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the invention relates to an electronic component, in particular a light-emitting electronic component, having an anode, a cathode and at least one organic layer arrangement which is arranged between the anode and the cathode and in electrical contact with the anode and the cathode.
  • Such electronic component are known in various embodiments. These include, for example, organic light-emitting components such as organic light-emitting diodes (OLED), organic diodes, organic solar cells and organic transistors.
  • organic light-emitting components such as organic light-emitting diodes (OLED), organic diodes, organic solar cells and organic transistors.
  • stacked organic light-emitting components are known in which a plurality of individual organic layer arrangements, in particular including a light-emitting region, are stacked between the anode and the cathode.
  • OLEDs in stacked construction are known.
  • the organic layer arrangement comprises a plurality of organic layers arranged one above the other.
  • one or more pn junctions may also be provided, as is known for stacked OLEDs (cf., EP 1 478 025 A2, such a pn junction in one embodiment using a p-doped hole transport layer and an n
  • a pn junction is an electric charge generating structure in which electric charges are generated when an electric potential is applied, preferably at the boundary between the two layers.
  • a p-doped hole transport layer is in contact with the anode or a hole injection layer disposed between the p-doped hole transport layer and the anode.
  • the n-type electron transport layer is in contact with the cathode or an electron injection layer disposed therebetween.
  • one or more dopant materials are incorporated into an organic matrix material that is an organic semiconductor material.
  • a layer is referred to as a p-doped organic layer when the organic matrix semiconductor material contains dopants in the form of acceptors.
  • a doped layer is referred to as an n-doped organic layer when the embedded dopants form donors for the organic matrix material.
  • An electrical doping in the context of the present application arises from the fact that the one or more embedded doping materials perform a redox reaction with the matrix material, resulting in an at least partial charge transfer between the one or more doping materials on the one hand and the matrix material on the other hand, d , H. a transfer of electrical charges between the materials takes place.
  • (additional) free charge carriers are formed in the layer, which in turn increase the electrical conductivity of the layer.
  • the result is a higher density of charge carriers in the matrix material compared to the undoped material.
  • carrier density x mobility of the charge carriers electrical conductivity.
  • the part of the charge carriers formed in the matrix material by means of the redox reaction need not first be injected from an electrode, but such charge carriers are already available in the layer as a result of the electrical doping.
  • a semiconductor material is referred to as a p-type semiconductor material if it is capable of transporting carriers in the form of holes, i. H. the mobility (mobility) for the holes is sufficient in the semiconductor material for transportation.
  • a semiconductor material is referred to as an n-type semiconductor material when it is capable of transporting carriers in the form of electrons, i. H. mobility (mobility) for electrons in the material is sufficient for transport.
  • document WO 2005/109542 A1 proposes to form a pn junction with a layer of an n-type organic semiconductor material and a layer of a p-type organic material, wherein the layer of n-type organic semiconductor material is in contact with an electrode designed as an anode. On In this way, an improved injection of charge carriers in the form of holes into the layer of the p-type organic semiconductor material is achieved.
  • the object of the invention is to provide an electronic component with an anode, a cathode and at least one organic layer arrangement between the anode and the cathode with improved operating characteristics.
  • an electronic component in particular a light-emitting electronic component, having an anode, a cathode and at least one organic layer arrangement is provided which is arranged between the anode and the cathode and in electrical contact with the anode and the cathode and which has at least one of the following regions
  • a np junction region which generates electrical charges upon application of electrical potential to the anode and the cathode, formed with a layer of p-type organic semiconductor material and an n-type n-type organic semiconductor material layer which is in contact with a conductive layer of the anode, and a pn-junction region generating further electric charges when the electric potential is applied to the anode and the cathode, with a n-type organic semiconductor material layer a p-doped layer is formed of a p-type organic semiconductor material which is in contact with a conductive layer of the cathode.
  • the proposed use of pn junctions allows the use of contact materials that are out of the question in conventional organic light-emitting diodes. It is thus possible, for example, to carry out Au or ITO as the cover electrode in the form of a cathode, ie during operation of the component, this contact is connected to the negative pole of the voltage source. If certain electrode materials are desired for technical reasons, but incompatibilities with the usual organic materials for charge carrier transport layers occur in conventional device structures, such as chemical reactions or the diffusion of atoms or ions, the proposed use of a pn junction or of two pn junctions allows more freedom in the choice of metals or transport materials.
  • metals with a low work function of less than 5.IeV, and preferably less than 4.5eV, such as Al or Ag such as the anode.
  • metals with a high work function of greater than 4.2eV such as Au or ITO as the cathode.
  • hole transport materials in conjunction with the cathode and / or electron transport materials in conjunction with the anode In this way it is easier to combine suitable, compatible contact materials and organic transport materials.
  • a major problem with the use of organic light emitting devices is that the so-called inverted structure is difficult to realize. In this structure, the cathode is on the substrate and the anode forms a capping contact.
  • Such structures are conventionally characterized by a significantly higher operating voltage and a lower lifetime compared to a related non-inverted structure.
  • the use of a pn junction or two pn junctions improves the properties of the inverted structure.
  • the cause is that the electrode materials used for the anode and the cathode in the non-inverted structures, for example ITO for the anode and Ag or Al for the cathode, can continue to remain in the same position of the component, namely as a base and cover contact, however, in conjunction with the pn junction or pn junctions, the cathode and anode function in an inverted structure.
  • the mobility for charge carriers in the form of holes is greater than 10 -7 cm 2 / Vs and preferably greater than 10 -5 cm 2 / Vs doped p-type organic semiconductor material has a low oxidation potential of less than 0.5V vs. Fc / Fc + , preferably less than OV vs. Fc / Fc +, and more preferably less than -0.5V vs. Fc / Fc + .
  • the p-type doped organic semiconductor material has an electrical conductivity which is greater than 10 -7 S / cm, preferably greater than 10 -5 S / cm and more preferably 10 -5 S / cm.
  • the mobility for charge carriers in the form of electrons is greater than 10 -7 cm / Vs and preferably greater than 10 -5 cm 2 / Vs.
  • the doped n-type organic semiconductor material has a high oxidation potential of greater than -2.5V.
  • Fc / Fc + preferably greater than -2.0V vs.
  • Fc / Fc + and more preferably greater than -1.5 V vs. Identifies Fc / Fc + .
  • the n-type doped organic semiconductor material has a conductivity which is greater than 10 -7 S / cm, preferably greater than 10 -5 S / cm and more preferably greater than 10 -3 S / cm.
  • the energy difference between the lowest unoccupied molecular orbital (LUMO - "Lowest Unoccupied Molecular Orbital") of the material of the n-type n-type and highest occupied molecular orbital (HOMO) n-type organic semiconductor layer of an adjacent layer of p-type organic semiconductor material smaller than 1.5 eV, preferably smaller than 1.OeV, and more preferably smaller
  • the energy difference is less than 2.5 eV, preferably less than 2.OeV, and more preferably less than 1.5 eV.
  • Type is less than 1.5eV, preferably less than 1.OeV, and more preferably less than 0.5eV.
  • the energy difference is less than 2.5 eV, preferably less than 2.OeV, and more preferably less than 1.5 eV ,
  • the layer of the n-type organic semiconductor material is a further n-doped layer. With the aid of n-doping, free charge carriers are provided in the form of electrons.
  • the layer of the p-type organic semiconductor material is a further p-doped layer.
  • free charge carriers are provided in the form of holes.
  • the layer of the p-type organic semiconductor material is formed as at least one layer type selected from the following group of layer types: hole transport layer and electron block layer.
  • a hole transport layer is characterized by being formed with sufficient mobility for the holes to transport the holes.
  • the layer of the p-type organic semiconductor material is an electron block layer with which the transport of electrons in the direction to the anode is prevented, whereas charge carriers are transported in the form of holes. These properties are based on different energetic barriers for the transport of electrons and holes in the electron block layer.
  • the layer of the n-type organic semiconductor material is formed as at least one layer type selected from the following group of layer types: electron transport layer and hole block layer.
  • An electron transport layer is characterized in that it is formed with sufficient mobility for the electrons to transport the electrons.
  • the n-type organic semiconductor material layer which in turn is in contact with the conductive layer of the cathode, is a hole block layer which blocks the transport of charge carriers in the organic layer assembly in a direction away from the cathode whereas electrical charge carriers are passed in the form of electrons.
  • the at least one organic layer arrangement comprises a light-emitting region, which is optionally embodied in one or more layers.
  • the free charge carriers namely electrons and holes
  • the emitter materials may be arranged in the light-emitting region, wherein in the case of a plurality of emitter materials, these may emit light of different colors, whereby white light is preferably generated in the sum.
  • the layer of the p-type organic semiconductor material is formed as part of the light-emitting region.
  • the n-type layer of the n-type organic semiconductor material then directly adjoins the light-emitting region within the organic layer arrangement.
  • a further development of the invention provides that the layer of the n-type organic semiconductor material is formed as part of the light-emitting region.
  • the light-emitting region then directly adjoins the p-type layer of the p-type organic semiconductor material within the organic layer arrangement.
  • An expedient development of the invention provides that the layer of the n-type organic semiconductor material is formed in multiple layers.
  • the layer of the organic semiconductor material of the p-type is formed in multiple layers.
  • the p-type organic semiconductor material of the p-doped layer of the p-type organic semiconductor material is an organic semiconductor material selected from the following group of organic semiconductor materials: triarylamine, phthalocyanine, organometallic Complex compound such as cobaltocene, metal complex such as Cr (hpp) 4 , free radical such as pentaphenylcyclopentadienyl and organic reductant such as tetrathiafulvalene derivatives or amino-substituted polycycles len.
  • the electronic component has been implemented as a component selected from the following group of components: organic light-emitting component, organic diode, organic solar cell, organic transistor and organic light-emitting diode.
  • intermediate layer is inserted between the layers of the p-type p-type organic semiconductor material and the n-type organic semiconductor material and the n-type n-type organic semiconductor material and the p-type organic semiconductor material, respectively thin intermediate layer is inserted.
  • Such an intermediate layer can consist, for example, of a metal or of acceptors and / or donors.
  • the intermediate layer leads in particular to an improvement in the stability of the pn junction.
  • the n-type organic semiconductor material of the n-doped layer of the n-type organic semiconductor material may be an organic semiconductor material selected from the following group of organic semiconductor materials: fullerenes C60, hexaazatriphenylenes, in particular hexanitriles hexaazatriphenylenes, and 1, 3,4,5,7,8-hexafluoronaphtho-2,6-quinonetetracyanomethane. Description of preferred embodiments of the invention
  • FIG. 1 shows a schematic representation of an organic electronic component in which an organic layer arrangement is arranged in contact with the electrode and the counterelectrode between an electrode and a counterelectrode;
  • FIG. 2 shows a graph of the current density as a function of the voltage for various exemplary embodiments of an organic electronic component;
  • FIG. Fig. 3 is a graph of luminance versus voltage for the various embodiments of the organic electronic device;
  • Fig. 5 is a graph of current density and brightness versus voltage for an example 10 of an organic electronic device.
  • an organic layer arrangement 4 is arranged between an electrode 1 and a counterelectrode 2, which is formed on a substrate 3, which in turn is in electrical contact with the electrode 1 and the counterelectrode 2.
  • an electrical voltage can be applied to the organic layer arrangement 4.
  • the application of the electrical voltage causes free charge carriers, namely electrons and holes, to migrate within the organic layer arrangement 4 to a light-emitting region and recombine there with the emission of light.
  • ETL - electron transport layer HTL - hole transport layer
  • EBL electron block layer HBL hole block layer
  • EL light emitting region ETL - electron transport layer
  • the organic layer arrangement 4 in the organic electronic component shown in FIG. 1 can be constructed as a layer structure in different configurations.
  • the following layer arrangements are advantageous:
  • layers HBL and / or EBL may be omitted, for example, when layer EL is electron transporting / hole transporting.
  • At least one pn / np junction is always formed, in which charge carriers are generated on application of an electrical voltage to the two electrodes, namely electrons and holes.
  • the aforementioned embodiments for the organic layer arrangement 4 can also be combined with one another as desired, so that two transitions in the organic layer arrangement 4 can also be formed.
  • one or more charge-generating regions or charge-generating layers are formed, for example: anode / n-doped ETL / EBL / EL / HBL / p-doped HTL / cathode or anode / n doped ETL / p-doped HTL / EBL / EL / HBL / n-doped ETL / p-doped HTL / cathode. It has been found that, in a simple embodiment, efficient charge generation occurs between the n-doped ETL and the EBL. In an analogous manner, charge generation was observed between the p-doped HTL and the HBL.
  • the energy difference between the lowest unoccupied molecular orbital (LUMO) of the material of the n-doped ETL and the highest occupied molecular orbital (HOMO) of the material the EBL is less than 1.5eV, preferably less than 1.OeV, and more preferably less than 0.5eV.
  • the energy difference between the HOMO of the material of the p-doped HTL and the LUMO of the material of the HBL is less than 1.5 eV, preferably less than 1.OeV and more preferably less than 0.5 eV.
  • ITO - indium tin oxide; Al-aluminum; STTB 2,7-tetra- (di-p-tolylamine) -9,9'-spirobifluorene; Pdop - 1,3,4,5,7,8-hexafluoronaphtho-2,6-quinone tetracyanoethane; NPB - N, N'-di (naphthalen-2-yl) -N, N'-diphenylbenzidine; Ndop - tetrakis (l, 2,3,3a, 4,5,6,6a, 7,8-decahydro-l, 9,9b-triazaphenalenyl) first (II); ETM -2,4,7,9-tetraphenyl phenanthrolines: ORE - iridium (III) bis (2-methyldi- benzo [f, h] quinoxalines) (acetylacetonates); HTM
  • P-dop has a reduction potential of about + 0.2V vs. Fc / Fc + .
  • NPB has an oxidation potential of about 0.3V.
  • Ndop has an oxidation potential of about -2.2V vs Fc / Fc + .
  • ETM has a reduction potential of about -2.2V vs. Fc / Fc + .
  • HTM has an oxidation potential of about 0.2 V vs. Fc / Fc + .
  • Fullerene C60 has a reduction potential of about -IV.
  • STTB has an oxidation potential of about 0.1 V vs. Fc / Fc + .
  • HAT has a reduction potential of about -0.6V vs. Fc / Fc + .
  • p denotes a p-type layer
  • i denotes an undoped layer (insulator)
  • n denotes an n-type layer.
  • Example 1 an organic electronic component having a conventional pin structure was produced as a reference.
  • the device has the following layer structure: Substrate: Glass / anode: 90 nm ITO / p-doped layer: 50 nm Pdop in STTB (1.5 percent by weight) / intrinsic layer: 10 nm NPB / intrinsic EL: 20 nm ORE in NPB (10%) / intrinsic interlayer: lOnm ETM / n-doped layer: 55nm Ndop in ETM (8 wt%) / Cathode: 100nm Al.
  • Example 2 an organic electronic device with an npin structure was fabricated: glass / anode: 90nm ITO / 45nm Ndop in ETM (8wt%) / 5nm Pdop in HTM (1.5wt%) / 10nm NPB / 20nm ORE in NPB ( 10%) / 10nm ETM / 55nm Ndop in ETM (8% by weight) / 100nm Al.
  • the conductivity of the layer of Ndop in ETM is about 2 * 10 "5 S / cm
  • an organic electronic device was fabricated with the following pin-layer structure: glass / anode: 90nm ITO / 50nm Pdop in STTB (1.5wt%) / 10nm NPB / 20nm ORE in NPB (10%) / 10nm ETM / 55nm Ndop in ETM (8 wt%) / 5nm Pdop in HTM (1.5 wt%) / 100nm Al.
  • the conductivity of the layer of PDOP in HTM is about 4 * 10 "5 S / cm
  • an organic electronic component with the following layer structure was produced as example 4 (npinp): glass / anode: 90 nm ITO / 45 nm Ndop in ETM (8% by weight) / 5 nm Pdop in HTM (1.5% by weight) / 10 nm NPB / 20 nm ORE in NPB (10%) / 10nm ETM / 55nm Ndop in ETM (8wt%) / 5nm Pdop in HTM (1.5wt%) / 100nm Al.
  • an organic electronic component with the following layer structure (pnipn) was produced as example 5: glass / 90 nm ITO / 5 nm Pdop in HTM (1.5% by weight) / 45 nm Ndop in ETM (8% by weight) / 10 nm ETM / 20 nm ORE in NPB (10 %) / lOnm NPB / 5nm Pdop in HTM (1.5 wt%) / 55nm Ndop in ETM (8 wt%) / Anode: 1 OOnm Al
  • Example 6 an organic electronic device having a simplified structure was prepared as follows: Glass / Anode: ITO / 1, 3,4,5,7,8-hexafluoronaphtho-2,6-quinetonetetracyanomethane doped with Ndop (50nm) / NPD: ORE (20nm, 10% by weight) /
  • a current density of 10 mA / cm 2 was measured.
  • the electrical conductivity of the layer of l, 3,4,5,7,8-Hexafluoronaphtho-2,6-chinontetracyanomethan doped with Ndop is about g * 10 "5 S / cm
  • Example 7 a structure was prepared for comparison: glass / anode: ITO / 1, 3,4,5,7,8-hexafluoronaphtho-2,6-quinetonetetracyanomethane (50nm) / NPD: ORE (20nm, 10% by weight) / BPhen (10nm) / BPhen: Cs (60nm) / Al. At an operating voltage of 3.3V, a current density of 10mA / cm 2 was measured.
  • Example 8
  • Example 8 an organic electronic device with a simplified structure was fabricated as follows: Glass / anode: ITO / HAT doped with Ndop (50nm) / NPD: ORE (20nm, 10wt%) / BPhen (10nm) / BPhen: Cs (8 : 1, 60nm) / Al. At an operating voltage of 4.4 V, a current density of 10 mA / cm 2 was measured. The conductivity of the layer is doped with Ndop is about 5 * 10 "5 S / cm
  • Example 9 an organic electronic device having the following layer structure was further prepared:
  • Example 10 an organic electronic device having the following layer structure was prepared:
  • the layers 22 and 24 form a pn junction, wherein the layer 23 of gold is provided between the two layers as a stabilizing metal layer, which in turn is not closed.
  • the electrical conductivity of the layer 22 was less than 0.5 S / cm.
  • FIGS. 5 and 6 show data for example 10.
  • Examples 9 and 10 a doped layer of fullerene is used in each case.
  • Fullenes in particular the Buckminster fullerene C60, have been extensively researched since their discovery in 1985 and are used, for example, in organic solar cells as acceptor material (see US Pat. No. 6,580,027 B2).
  • the document WO 92/04279 discloses a process for the production of C60 and C70 in larger quantities.
  • Fullerenes are now available as inexpensive starting materials.
  • fullerene C60 doped with dopants have conductivities of more than 2 S / cm.
  • the layer formed from fullerene is preferably applied in a high vacuum by means of simultaneous evaporation of the fullerene and of the organic dopant, ie with the method customary for organic thin films.
  • the application of such a fullerene layer adds without additional effort in the production process of the organic light-emitting component.
  • Example 1 Cathode ITO / 75 nm ETM doped with Ndop (9% by weight) / 10 nm ETM / 20 nm BAIq doped with Ir (pic) 3 (10% by weight) / 100 nm NPB / 45nm STTB doped with Pdop (6% by weight) / anode 100 nm Al.
  • the ITO cathode is located on a transparent glass substrate.
  • Example 12 an organic electronic device having the following layer structure was fabricated (nipn): Cathode ITO / 75nm ETM doped with Ndop (9wt%) / 10nm ETM / 20nm BAIq doped with Ir (pic) 3 (10wt%) / 10nm NPB / 20nm STTB doped with Pdop (6wt%) / 25nm ETM doped with Ndop (9wt%) / Anode 100nm Al. Compared to Example 11, a low operating voltage and higher current efficiency were measured using a pn junction in conjunction with the anode.
  • An organic electronic device was fabricated with the following layer structure: Anode: 90nm ITO / 50nm Pdop in STTB (1.5wt%) / 10nm NPB / 20nm ORE in NPB (10%) / 10nm ETM / 10nm Ndop in ETM (8wt%) / 5nm Pdop in HTM (1.5 Weight percent) / 40nm Pdop in STTB (1.5% by weight) / 100nm Al.
  • the p-type p-type layer is multilayered to improve the stability of the device.
  • FIG. 2 shows a graph of the current density as a function of the voltage for various embodiments of an organic component.
  • FIG. 3 shows a graph of the luminance as a function of the voltage for the various embodiments of the organic electronic component.

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  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un composant électronique, en particulier un composant électronique d'émission de lumière, avec une anode, une cathode et au moins un agencement de couches organiques, qui est disposé entre l'anode et la cathode et qui est en contact électrique avec l'anode et la cathode et qui présente au moins une des zones suivantes : une zone générant des charges électriques lors de l'application d'un potentiel électrique à l'anode et à la cathode avec une transition np, laquelle est formée par une couche de matériau semi-conducteur organique de type p et une couche de dotation n en un matériau semi-conducteur organique de type n, laquelle est en contact avec une couche conductrice de l'anode, et une zone de génération d'autres charges électriques lors de l'application du potentiel électrique à l'anode et à la cathode avec une transition pn, laquelle est formée par une couche en un matériau semi-conducteur organique de type n et une couche de dotation p en un matériau semi-conducteur organique de type p, laquelle est en contact avec une couche conductrice de la cathode.
PCT/EP2007/011353 2006-01-11 2007-12-21 Composant électronique avec au moins un agencement de couches organiques WO2008077615A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/519,912 US20120025171A1 (en) 2006-01-11 2007-12-21 Electronic Component with at Least One Organic Layer Arrangement
JP2009541910A JP2010514174A (ja) 2006-12-22 2007-12-21 少なくとも１つの有機層配列を有する電子素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06026743A EP1808910B1 (fr) 2006-01-11 2006-12-22 Composant électronique doté dýau moins un dispositif de couche organique
EP06026743.2 2006-12-22

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WO2008077615A1 true WO2008077615A1 (fr) 2008-07-03

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JP2011222976A (ja) * 2010-03-23 2011-11-04 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器、および照明装置
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WO2014006566A1 (fr) * 2012-07-02 2014-01-09 Heliatek Gmbh Agencement d'électrodes pour des composants électro-optiques
WO2014005766A1 (fr) * 2012-07-06 2014-01-09 Osram Opto Semiconductors Gmbh Composant électroluminescent organique
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EP2752904A4 (fr) * 2012-05-31 2015-05-27 Lg Chemical Ltd Diode électroluminescente organique
EP2752903A4 (fr) * 2012-05-31 2015-05-27 Lg Chemical Ltd Diode électroluminescente organique
EP2752906A4 (fr) * 2012-05-31 2015-05-27 Lg Chemical Ltd Diode électroluminescente organique

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WO2010034431A3 (fr) * 2008-09-26 2010-11-18 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Composant organique opto-électrique et procédé de production d'un composant organique opto-électrique
US8766286B2 (en) 2008-09-26 2014-07-01 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Organic opto-electric device and a method for manufacturing an organic opto-electric device
WO2010134432A1 (fr) * 2009-05-22 2010-11-25 コニカミノルタホールディングス株式会社 Élément de conversion photoélectrique organique
JP5488595B2 (ja) * 2009-05-22 2014-05-14 コニカミノルタ株式会社 有機光電変換素子
JP2012529169A (ja) * 2009-06-05 2012-11-15 ヘリアテク・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 逆層配列を含む光活性コンポーネントおよび前記コンポーネントを製造する方法
CN102460761A (zh) * 2009-06-05 2012-05-16 赫里亚泰克有限责任公司 包含倒置的层顺序的光活性元件以及制备所述元件的方法
JP2011222976A (ja) * 2010-03-23 2011-11-04 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器、および照明装置
US9023491B2 (en) 2010-03-23 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
EP2752904A4 (fr) * 2012-05-31 2015-05-27 Lg Chemical Ltd Diode électroluminescente organique
CN104321896A (zh) * 2012-05-31 2015-01-28 株式会社Lg化学 堆叠式有机发光二极管
EP2752903A4 (fr) * 2012-05-31 2015-05-27 Lg Chemical Ltd Diode électroluminescente organique
EP2752906A4 (fr) * 2012-05-31 2015-05-27 Lg Chemical Ltd Diode électroluminescente organique
EP2752905A4 (fr) * 2012-05-31 2015-08-26 Lg Chemical Ltd Diode électroluminescente organique empilée
US9190626B2 (en) 2012-05-31 2015-11-17 Lg Chem, Ltd. Organic light emitting diode having low driving voltage, high brightness, and excellent light emitting efficiencies
US9269919B2 (en) 2012-05-31 2016-02-23 Lg Chem, Ltd. Stacked organic light emitting diode
US9281490B2 (en) 2012-05-31 2016-03-08 Lg Chem, Ltd. Organic electroluminescent device
US9508950B2 (en) 2012-05-31 2016-11-29 Lg Display Co., Ltd. Organic light emitting diode
WO2014006566A1 (fr) * 2012-07-02 2014-01-09 Heliatek Gmbh Agencement d'électrodes pour des composants électro-optiques
WO2014005766A1 (fr) * 2012-07-06 2014-01-09 Osram Opto Semiconductors Gmbh Composant électroluminescent organique

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