WO2013179898A1 - Module de batterie solaire, son procédé de fabrication et dispositif de gestion de fabrication de module de batterie solaire - Google Patents

Module de batterie solaire, son procédé de fabrication et dispositif de gestion de fabrication de module de batterie solaire Download PDF

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Publication number
WO2013179898A1
WO2013179898A1 PCT/JP2013/063599 JP2013063599W WO2013179898A1 WO 2013179898 A1 WO2013179898 A1 WO 2013179898A1 JP 2013063599 W JP2013063599 W JP 2013063599W WO 2013179898 A1 WO2013179898 A1 WO 2013179898A1
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Prior art keywords
electrode layer
solar cell
removal
cell module
photoelectric conversion
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PCT/JP2013/063599
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English (en)
Japanese (ja)
Inventor
知弘 池田
細野　彰彦
本並　薫
伸吾 友久
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三菱電機株式会社
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Priority to JP2014518378A priority Critical patent/JPWO2013179898A1/ja
Publication of WO2013179898A1 publication Critical patent/WO2013179898A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • FIG. 1 is a cross-sectional view schematically showing the configuration of a thin film solar cell.
  • the thin film solar cell includes a photoelectric conversion cell 120 in which a surface electrode layer 111, a p-type semiconductor film 121, an i-type semiconductor film 122 and an n-type semiconductor film 123 are stacked on a glass substrate 101, and a transparent back surface.
  • the back electrode layer 130 in which the conductive film 131 and the back electrode film 132 are stacked has a structure in which the conductive film 131 and the back electrode film 132 are stacked in order.
  • the surface electrode layer 111 is made of, for example, a transparent conductive film having a concavo-convex shape on the upper surface (the surface opposite to the surface in contact with the glass substrate 101).
  • FIG. 2 is a diagram showing an example of the configuration of an integrated thin film solar cell module in a dark state
  • (a) is a plan view seen from the back side of the integrated thin film solar cell module
  • (b) is a cross-sectional view taken along the line AA in (a)
  • (c) is a diagram showing an equivalent circuit.
  • the X axis and the Y axis perpendicular to each other in the substrate surface are taken, and the direction perpendicular to the substrate surface is taken as the Z axis.
  • the integrated thin film solar cell module 100 has a structure in which a plurality of rectangular subcells 140 extending in the X direction are arranged on the glass substrate 101 at predetermined intervals in the Y direction. Specifically, on the glass substrate 101 on which the rectangular surface electrode layer 111 extending in the X direction and arranged at a predetermined interval in the Y direction is formed, a photoelectric having substantially the same size as the surface electrode layer 111 is formed. A stacked body composed of the conversion cell 120 and the back electrode layer 130 has a structure arranged at a predetermined interval in the Y direction so as to straddle the two surface electrode layers 111 adjacent in the Y direction. Then, the front electrode layer 111 and the back electrode layer 130 are connected in the photoelectric conversion cell 120.
  • the groove that separates the surface electrode layer 111 in the Y direction is referred to as a first scribe line 141
  • the groove provided in the photoelectric conversion cell 120 that connects the surface electrode layer 111 and the back electrode layer 130 is the second scribe line.
  • the groove for separating the stacked body in the Y direction is called a third scribe line 143.
  • a region formed by the set of the first to third scribe lines 141 to 143 is referred to as a first separation groove 146.
  • the subcell 140 is formed in a region partitioned between two adjacent first separation grooves 146.
  • the surface electrode layer 111 of the subcell 140 is connected to the back electrode layer 130 of one adjacent subcell 140, and the back electrode layer 130 is connected to the surface electrode layer 111 of the other adjacent subcell 140, on the glass substrate 101.
  • a plurality of subcells 140 are connected in series.
  • the film removal process corresponding to the first to third scribe lines 141 to 143 is performed three times to separate the subcell 140 within the surface of the glass substrate 101. / Connect and adjust module voltage and current.
  • Such a process in the thin film solar cell module 100 is called integration.
  • Three film removal processes, that is, processes for forming the first scribe line 141, the second scribe line 142, and the third scribe line 143 will be referred to as P1, P2, and P3 scribe processes, respectively.
  • FIG. 3 is a diagram showing types of films removed by a film removal process performed in the manufacturing process of the thin film solar cell module
  • (a) is a diagram schematically showing a cross-sectional structure of the thin film solar cell module.
  • (B) is a figure which shows the film
  • the surface electrode layer 111 is removed, and the removed groove portion becomes the first scribe line 141.
  • the semiconductor film (photoelectric conversion cell 120) or the backside transparent conductive film 131 added thereto is removed, and the removed groove portion becomes the second scribe line 142.
  • a test circuit group (hereinafter referred to as TEG) pattern, which is a minicell group that also operates as a power generation region, is provided in the thin-film solar cell module 100.
  • TEG test circuit group
  • a TEG pattern layout and a probing method are described. explain.
  • the TEG is provided for the purpose of acquiring the electrical characteristics of each element of the equivalent circuit shown in FIG.
  • FIG. 4 is a diagram schematically illustrating an example of a method for measuring the diode characteristics of the subcell according to the embodiment. Since the subcell 140 is represented by an equivalent circuit as shown in FIG. 2C, as shown in FIG. 4A, the probe pins 201a and 201b are formed on the back electrode layer 130 of the subcell 140 adjacent in the Y-axis direction. The diode characteristics can be measured by lowering 201b and measuring with a measuring device 200 such as an IV meter.
  • a measuring device 200 such as an IV meter.
  • a voltage is applied to the guard pins 203a and 203b and the guard pins 203a and 203b as shown in FIG. 4B. It is desirable to prepare the guard pin driver 202 and lower the guard pins 203a and 203b on the back electrode layer 130 of the two subcells 140a adjacent to the subcell 140 where the probe pins 201a and 201b are lowered as necessary. At this time, a voltage is applied from the guard pin driver 202 to the guard pins 203a and 203b so that the guard pin 203a has the same voltage as the probe pin 201a and the guard pin 203b has the same voltage as the probe pin 201b.
  • FIG. 5 is an equivalent circuit diagram in a state where the diode characteristics of the subcell are measured using the guard pin.
  • the voltage of the guard pin 203a is made equal to the voltage of the probe pin 201a
  • the voltage of the guard pin 203b is made equal to the voltage of the probe pin 201b so that no current flows in the adjacent subcell 140. Therefore, it is possible to accurately measure the current-voltage characteristics of the diode in units of subcells 140.
  • any of two-terminal and four-terminal methods may be used.
  • FIG. 6 is a diagram schematically showing another example of a method for measuring a diode characteristic of a subcell using a guard pin.
  • all the probe pins 201a and 201b and the guard pins 203a and 203b are measured on the back electrode layer 130 of the subcell 140, but as shown in FIG. 6, the probe pins 201a and the guard pins 203b are measured. (Or the probe pin 201b and the guard pin 203a) may be brought into direct contact with the surface electrode layer 111 exposed at the bottom of the third scribe line 143 provided in the thin film solar cell module 100.
  • FIG. 9A and 9B are diagrams showing an example of patterning of a minicell, where FIG. 9A is a plan view, FIG. 9B is a sectional view taken along line BB in FIG. 9A, and FIG. It is C sectional drawing.
  • FIG. 10 is an equivalent circuit diagram of the thin film solar cell module shown in FIG.
  • the rectangular subcells 140-1 to 140-3 extending in the X direction are separated in the Y direction by the first separation groove 146, but the minicells 170a and 170b are formed. Requires three or more subcells 140-1 to 140-3 to be arranged in series.
  • the second separation grooves 145 are formed continuously in the two subcells 140-1 and 140-2 adjacent in the Y direction, so that the minicells 170a and 170b are separated from the subcells 140-1 and 140-2, respectively.
  • the second separation groove 145 that separates the minicells 170a and 170b is a first separation groove 146 extending in the X direction that separates the subcells 140-1 to 140-3, that is, the first to third scribe lines 141 to 143. Cross against the pair.
  • the subcells 140-1 to 140-3 are separated by first separation grooves 146 extending in the parallel X direction at substantially constant intervals.
  • Minicells 170a and 170b are formed by providing a second separation groove 145 extending in the vertical Y direction.
  • the second separation groove 145 can be constituted by, for example, a fourth scribe line that removes the back electrode layer 130, the photoelectric conversion cell 120, and the front electrode layer 111.
  • the second separation groove 145 is also configured by a first / third / first scribe line that is a combination of the first scribe line 145a, the third scribe line 145b, and the first scribe line 145a extending in the Y direction. be able to.
  • FIG. 9 described above shows a case where the second separation groove 145 is configured by the first / third / first scribe lines.
  • a pair of first scribe lines 145a are formed on the surface electrode layers 111 at both ends in the X-axis direction of the minicell formation region so as to cross two subcells 140-1 and 140-2 adjacent in the Y direction.
  • the pair of first scribe lines 145a is formed in the same process as the process of forming the first scribe lines 141 of the subcell 140.
  • one third scribe line 145b is crossed between the photoelectric conversion cell 120 and the back surface so as to cross the two subcells 140-1 and 140-2 adjacent in the Y direction.
  • FIG. 1 It forms in the laminated body of the electrode layer 130.
  • FIG. 1 The one third scribe line 145b is formed in the same process as the process of forming the third scribe line 143 of the subcell 140. As a result, a second separation groove 145 composed of the first / third / first scribe lines is formed.
  • a leakage current flows through the semiconductor layer (particularly the p layer) on the first scribe line 141 to the adjacent subcell 140.
  • a leakage current originally flows even when the subcells 140 are connected in series at the time of integration, and is not so great as to have a significant adverse effect on the cell characteristics. It is desirable to use it separately from the scribe line.
  • the second separation groove 145 that separates the minicell 170 is not formed in the adjacent subcell 140, and the electrode of the minicell 170 is connected to the subcell 140 in series. Therefore, the minicell 170 and the subcell 140 portion excluding the minicell 170 are connected in parallel. As a result, during power generation, the power generated by the minicell 170 can also be used effectively.
  • the TEG pattern formed by the minicell 170 according to this embodiment can be used for evaluating the characteristics of the thin-film solar battery module 100, and can also be used as a power generation layer thereafter.
  • the ratio of the area occupied by the scribe line itself to the area of one subcell 140 is preferably at least 5% or less from the viewpoint of current matching.
  • the patterning process for the first to third scribe lines 141 to 143 includes various methods such as laser scribe, blast, mechanical scribe, photolithography, mask lithography using ink jet / screen printing, etc. An explanation will be given by taking the case of using a process as an example.
  • FIG. 11 is a diagram schematically showing an example of a TEG pattern.
  • one TEG pattern is formed by a plurality (four in this case) of minicells 170a to 170d having different sizes (areas).
  • the purpose of this pattern is to acquire scribe damage and bulk pn junction characteristics.
  • Laser scribing itself is a rough technique that removes the film by ablation. By creating burrs around the removal region, film damage due to local heating, formation of a leak path due to exposure of the pn junction end face after film removal, etc.
  • the vicinity of the scribe line has a leaky characteristic as compared with the cell bulk.
  • I1 S1 ⁇ Is + L1 ⁇ IL (1-1)
  • the measurement result (measured value) can be divided into scribe damage and bulk pn junction characteristics. Then, a diode characteristic evaluation is performed for each of the obtained Is and IL to determine whether or not it has a standard characteristic value, and which characteristic has a strong influence on the measurement result (measured value). And quantify the degree of its impact. More specifically, the measurement result (measurement value) deviates from the standard value because of the scribe process or the pn junction characteristics, that is, the film formation (CVD) process of the photoelectric conversion cell 120. Can be carved out.
  • CVD film formation
  • FIG. 12 is a diagram schematically illustrating an example of a TEG pattern. This pattern aims to acquire scribe damage. As shown in FIG. 12, n minicells 170a and 170b having the same area are prepared, and n1 to nn third scribe lines 171 are intentionally provided in the minicells 170a and 170b. Apply.
  • the direction of the third scribe line 171 to be formed is not particularly limited. In this example, the third scribe line 171 extends in the Y direction, for example, and is formed so as not to be connected to the first separation groove 146 extending in the X direction that partitions the subcell 140.
  • the vicinity of the third scribe line 171 provided in the minicells 170a and 170b by the scribe process has a leaky characteristic. Therefore, assuming that the current component of the cell bulk is ID and the leak current component due to damage is Ileak, the current flowing in this pattern is obtained by the following equations (2-1) to (2-n). Then, ID and Ileak that minimize the error of the simultaneous equations (2-1) to (2-n) are obtained.
  • I1 ID-n1 ⁇ Ileak (2-1)
  • I2 ID-n2 ⁇ Ileak (2-2) &
  • In ID-nn ⁇ Ileak (2-n)
  • the measurement result (measured value) can be divided into scribe damage and bulk pn junction characteristics. Then, diode characteristics evaluation is performed for each of the obtained ID and Ileak to determine whether or not it has a standard characteristic value, and which characteristic has a strong influence on the measurement result (measurement value)? And quantify the degree of its impact.
  • a linear pattern is formed, but a pattern may be formed by arranging linear, rectangular, or circular patterns on a straight line.
  • FIG. 13 is a diagram schematically showing an example of a TEG pattern.
  • the purpose of this pattern is to obtain the surface electrode layer resistance Rs_TCO_F and the contact resistance Rs_CON at the second scribe line 142.
  • a second separation groove 145 (first / third / first scribe line) that intersects at an angle that is not perpendicular to the X direction is inserted into the subcell 140 to produce n parallelogram-shaped minicells 170a to 170c.
  • the lengths in the hypotenuse direction between the n minicells 170a to 170c are LI1 to LIn.
  • the measurement result (measured value) can be divided into the surface electrode layer resistance and the contact resistance. Then, a characteristic evaluation is performed for each of the obtained Rs_TCO_F and Rs_CON to determine whether or not it has a standard characteristic value, and which characteristic has a strong influence on the measurement result (measured value). Judge and quantify the degree of the impact.
  • FIG. 14 is a diagram schematically illustrating an example of a TEG pattern.
  • the purpose of this pattern is to obtain the surface electrode layer resistance Rs_TCO_F and the contact resistance Rs_CON at the second scribe line 142.
  • the second separation grooves 145 (first / third / first scribe lines) are inserted into the minicells 170a and 170b, and n mini-cells 170a and 170b having a meander shape (a zigzag shape) are produced.
  • the number of folds between the n minicells 170a and 170b is n1 to nn.
  • the measurement result (measured value) can be divided into the surface electrode layer resistance and the contact resistance. Then, a characteristic evaluation is performed for each of the obtained Rs_TCO_F and Rs_CON to determine whether or not it has a standard characteristic value, and which characteristic has a strong influence on the measurement result (measured value). Judge and quantify the degree of the impact.
  • FIG. 15 is a diagram schematically showing an example of a TEG pattern, where (a) is a plan view and (b) is a DD cross-sectional view of (a). The purpose of this pattern is to obtain the contact resistance Rs_CON of the front electrode layer 111 / back electrode layer 130.
  • n minicells 170a and 170b having the same area are prepared, and n1 to nn second scribe lines 172 are intentionally provided in each minicell 170a and 170b.
  • the scribe direction is not particularly limited in the above-described core 2 (third scribe line 171), but the second scribe line 172 applied with this TEG pattern is perpendicular to the direction (Y direction) in which the subcells 140 are connected in series. In other words, it is parallel to the long side direction (X direction) of the elongated subcell 140. Since the series resistance decreases in accordance with the number of second scribe lines 172 formed in the minicells 170a and 170b, the error of the simultaneous equations of the following equations (5-1) to (5-n) is minimized. Rs and Rs_CON are obtained.
  • FIG. 16 is a diagram schematically showing an example of a TEG pattern, where (a) is a plan view, (b) is a cross-sectional view taken along line FF in (a), and (c) is another example.
  • FIG. This pattern is intended to be divided into a resistance Rs_TCO_F of the surface electrode layer 111 and a contact resistance Rs_CON_TCO-Cell between the surface electrode layer 111 and the photoelectric conversion cell 120.
  • second separation grooves 145A and 145B are formed across three adjacent subcells 140-1 to 140-3.
  • the first separation grooves 146A and 146B and the second separation grooves 145A and 145B that separate the minicells 170f to 170i have different depths depending on the location.
  • the first separation groove 146A is constituted by a third scribe line 146a
  • the first separation groove 146B is constituted by a third scribe line 146a and a fourth scribe line 146b.
  • the second separation groove 145A is constituted by a fourth scribe line 145c
  • the second separation groove 145B is constituted by a third scribe line 145b and a fourth scribe line 145c.
  • the second separation groove 145B is disposed between each of the three second separation grooves 145A.
  • two sets of minicells adjacent on the left and right sides across the second separation groove 145B are set as one set, and n sets (n is set so that only the width of the left region is different without changing the width of the right region). 2 or more natural numbers).
  • the dimensions in the X direction of the minicells 170g and 170i arranged on the right side are equal, and the dimensions in the X direction of the minicells 170f and 170h arranged on the left side are different.
  • the measurement result (measured value) can be divided into the surface electrode layer resistance and the contact resistance. Then, each of the obtained Rs_TCO_F and Rs_CON_TCO-Cell is evaluated for characteristics to determine whether or not it has a standard characteristic value, and the measurement result (measured value) is strongly influenced by which characteristic. And quantify the degree of the impact.
  • a hole 147 is formed by a plurality of third scribe lines in the photoelectric conversion cell 120 of the left minicell 170h of one set, and a measurement terminal is directly connected from the hole 147. It may be dropped on the surface electrode layer 111.
  • FIG. 17 is a diagram schematically showing an example of a TEG pattern
  • (a) is a plan view
  • (b) is a diagram schematically showing a potential distribution in a minicell under measurement
  • (C) is a plan view schematically showing the state of measurement of the minicell.
  • the purpose of this pattern is to acquire the temperature characteristics of the photoelectric conversion cell 120.
  • two second separation grooves 145A are formed across three adjacent subcells 140-1 to 140-3, and are separated by the two second separation grooves 145A of the subcells 140-1 and 140-3.
  • One second separation groove 145C is formed in the center of the region.
  • These second separation grooves 145A and 145C are constituted by a fourth scribe line 145c.
  • the first separation groove 146A is constituted by a third scribe line 146a
  • the first separation groove 146B is constituted by a third scribe line 146a and a fourth scribe line 146b.
  • the minicell 170j in the figure is used, and the temperature is raised by Joule heat by flowing a temperature-raising bias current through the front electrode layer 111 and the back electrode layer 130.
  • the measurement terminal 201A (IV source meter 200A) of the back bias current / photoelectric conversion cell 120 is dropped at the right end and the left end of the minicell 170j.
  • the measurement terminal 201B (IV source meter 200B) of the surface bias current / photoelectric conversion cell 120 is dropped at the right end and the left end of the subcell below the minicell 170j.
  • the temperature-dependent current-voltage characteristics of the photoelectric conversion cell 120 can be obtained from the current value difference between the IV source meters 200A and 200B. Can be acquired.
  • the temperature itself may be separately measured using a thermocouple, a radiation thermometer, a thermography, or the like.
  • the temperature characteristics of the resistance values of the front electrode layer 111 and the back electrode layer 130 can be acquired.
  • the measurement result (measured value) can be divided into the temperature characteristics of the front and back electrode layers and the temperature characteristics of the photoelectric conversion cell. Then, perform a characteristic evaluation for each temperature characteristic, determine whether or not it has a standard characteristic value, determine which characteristic the measurement result (measurement value) is strongly influenced by, Quantify the degree of impact.
  • FIG. 18 is a diagram schematically illustrating an example of a TEG layout.
  • the purpose of this layout is to obtain in-plane uniformity of TEG inspection results. Therefore, the arrangement is such that the minicells (TEG patterns) are uniformly distributed in the substrate surface.
  • minicells 170a to 170e (TEG patterns) are provided in a total of five regions including the center and four corners of the thin film solar cell module 100.
  • a total of 25 TEG patterns of 5 ⁇ 5 in the X direction and the Y direction may be provided.
  • the arrangement of the TEG pattern can be determined according to the distribution characteristics of a target process (for example, a conductive film formation process, a semiconductor film formation process, a scribe process, etc.).
  • a CVD method in which film formation is often performed in one chamber often has an elliptical distribution from the center to the outer periphery
  • a PVD method in which film formation is often performed in-line is only one-dimensional in a direction perpendicular to the moving direction.
  • the TEG pattern is arranged according to such distribution characteristics.
  • FIG. 19 is a diagram schematically illustrating an example of a TEG layout.
  • the purpose of this layout is to acquire damage caused by the fourth scribe line applied before the tab line is pasted. Therefore, the minicell 170 (TEG pattern) is provided along the outer periphery of the glass substrate (thin film solar cell module 100).
  • the TEG pattern may be provided entirely along the outer periphery of the glass substrate, or the TEG pattern may be provided at predetermined intervals along the outer periphery of the glass substrate.
  • FIG. 20 is a cross-sectional view schematically showing an example of a TEG layout.
  • the purpose of this layout is to manage the quality of the texture according to the shift amount of the TEG measurement result when texture glass is used for the glass substrate 101.
  • a TEG pattern is arranged in each of the regions 101a and 101b of the surface roughness 102 of the glass substrate 101 having a plurality of surface roughnesses 102 by a texturing process.
  • FIG. 21 is a block diagram schematically showing an example of the configuration of the solar cell module manufacturing management apparatus according to this embodiment.
  • the solar cell module production management apparatus 10 includes a surface electrode layer film forming apparatus 21, a semiconductor film film forming apparatus 22, a back surface transparent conductive film forming apparatus 23, a back electrode film forming apparatus 24, and a scribe that manufacture the thin film solar cell module 100. It is connected to the line forming device 25, and it is necessary to discard the thin-film solar cell module 100 manufactured using information obtained from the measurement result of the TEG pattern, and to correct the process conditions in each of the connected devices. Device.
  • the electrical property measuring unit 12 measures electrical properties of a thin-film solar cell configured by attaching a plurality of thin-film solar cell modules 100 with tabs. For example, conversion efficiency, short-circuit current, open-circuit voltage, curvature factor, and the like are measured as primary characteristic information by a solar simulator.
  • the error of the simultaneous equations expressed by the equations (1-1) to (1-n) is minimized from the measured current value flowing through the minicell.
  • a current component Is caused by a pn junction of a large cell bulk and a leaky current component IL around the scribe line are obtained.
  • the expressions (1-1) to (1-n) are the characteristic value calculation conditions necessary for acquiring the secondary characteristic information
  • Is and IL are the secondary characteristic information. The same applies to other TEG patterns.
  • the recombination leakage component J02 can be obtained by performing the junction characteristic evaluation by the two-diode model shown in the following formula (7) on the current component Is caused by the cell bulk pn junction obtained above.
  • Is J01 (exp (q (V ⁇ Is ⁇ Rs) / kT) ⁇ 1) + J02 (exp (q (V ⁇ Is ⁇ Rs) / 2kT) ⁇ 1) (7)
  • V is the applied voltage
  • Rs is the total series resistance
  • J01 and J02 are diode saturation currents
  • q is the elementary charge
  • k is the Boltzmann constant
  • T room temperature
  • equation (7) is a characteristic value calculation condition necessary for acquiring the third characteristic information
  • J02 is the third characteristic information.
  • the characteristic value calculation unit 14 performs a process of calculating secondary characteristic information from the measurement value obtained by the TEG measurement unit 11 using the characteristic value calculation condition in the characteristic value calculation condition storage unit 13. In addition, a process for calculating the third characteristic information from the first characteristic information and the calculated second characteristic information using the characteristic value calculation condition in the characteristic value calculation condition storage unit 13 is performed.
  • the reference value storage unit 15 stores values (or ranges) of characteristic information necessary for the thin film solar cell module 100 and the thin film solar cell as products.
  • the reference value is held corresponding to the secondary characteristic information and the primary characteristic information which is a measurement result measured by the electrical characteristic measurement unit 12.
  • the discard determination unit 16 compares the secondary characteristic information obtained from the characteristic value calculation unit 14 or the measurement value obtained by the electrical characteristic measurement unit 12 with a reference value stored in the reference value storage unit 15, It is determined whether the produced thin film solar cell module 100 or the thin film solar cell is to be discarded. Specifically, if the secondary characteristic information or measurement value does not satisfy the reference value, the target is discarded. If the secondary characteristic information or measurement value satisfies the reference value, the target is discarded. Must not. Since one thin-film solar cell module 100 is provided with a plurality of TEGs, the average value of the secondary characteristic information in the plurality of TEGs is used to determine whether or not to be discarded. If there is any TEG that does not satisfy the reference value, it can be determined to be discarded.
  • the process management information storage unit 17 stores process management information in which characteristic information (secondary characteristic information or tertiary characteristic information) is associated with a process condition for setting the characteristic information to a desired value.
  • characteristic information secondary characteristic information or tertiary characteristic information
  • the process condition is the film formation condition of the photoelectric conversion cell 120 (semiconductor film) formed by the CVD method, for example, the gas flow rate, the pressure, the substrate temperature, and the RF power film thickness direction.
  • Conditional profiling and other conditions are included in the process management information.
  • process management information for example, process conditions for obtaining a desired recombination leakage current value are determined and stored for each recombination leakage current value. The process conditions for each recombination leakage current are obtained in advance by experiments.
  • the process condition correction unit 18 acquires a process condition corresponding to the characteristic information obtained by the characteristic value calculation unit 14 from the process management information storage unit 17, and sets a correction condition for correcting the current process condition based on the process condition. Then, the correction condition is reflected on the apparatus for manufacturing the thin-film solar cell module 100.
  • FIGS. 22 to 23 are flowcharts showing an example of the procedure of the method for manufacturing the solar cell module according to this embodiment.
  • FIGS. 24-1 to 24-6 are diagrams schematically showing an example of the procedure of the manufacturing method of the solar cell module according to this embodiment, and (a) in each drawing is a top view, b) is a sectional view taken along line EE of FIG.
  • a semiconductor film (photoelectric conversion cell 120) is formed on the surface electrode layer 111 separated by the first scribe lines 141 and 145a by a film forming method such as a CVD method (step S14).
  • a film forming method such as a CVD method
  • the semiconductor film for example, a laminated film of a p-type amorphous silicon film, an i-type amorphous silicon film, and an n-type amorphous silicon film can be exemplified.
  • the back transparent conductive film 131 is formed on the semiconductor film by a film forming method such as sputtering (step S15, FIG. 24-3).
  • a back electrode film 132 is formed on the back transparent conductive film 131 on which the second scribe line 142 is formed by a method such as sputtering (step S17, FIG. 24-5).
  • the back electrode film 132 is also formed in the second scribe line 142 (groove), and the front electrode layer 111 and the back electrode film 132 are connected.
  • third scribe lines 143 extending in the X direction at different positions from the first and second scribe lines 141 and 142 are formed at predetermined intervals in the Y direction by a P3 scribe process using a laser scribe method ( Step S18, FIG. 24-6).
  • the characteristic value calculation unit 14 calculates the third characteristic information using the characteristic value calculation condition, the measured value, and the second characteristic information in the characteristic value calculation condition storage unit 13 (step S32). For example, information to be calculated (third characteristic information) is calculated using the above-described equation (7). Thus, the characteristic value calculation process ends.
  • the calculation up to the third characteristic information is performed here, the purpose is to obtain the electric characteristics of the desired element among the elements as shown in FIG. 5, so that the electric characteristics of the desired element can be obtained.
  • the process may be completed until the calculation of the secondary characteristic information, or the calculation process after the fourth characteristic information may be performed.
  • the discard determination unit 16 determines whether or not to discard the thin film solar cell module 100 to be measured (step S21). Specifically, the discard determination unit 16 determines whether the measured value or the calculated characteristic information (secondary characteristic information or third characteristic information) satisfies a reference value that is a standard value as a product. . Here, when the reference value is satisfied, the product is used without being discarded, and when the reference value is not satisfied, the product is discarded.
  • the discard determination can be performed using, for example, photoelectric conversion efficiency, short-circuit current, open-circuit voltage, curvature factor, and the like.
  • FIG. 23B is a flowchart illustrating an example of a specific processing procedure of the process condition correction processing.
  • the process condition correction unit 18 includes certain elements (for example, the resistance of the front electrode layer 111, the resistance of the back electrode layer 130, the contact resistance between the back electrode layer 130 / the front electrode layers 111, and the shunt, which constitute the TEG shown in FIG.
  • the electrical characteristics of the diode, shunt resistor, etc. are acquired (step S51).
  • the electrical characteristics are acquired from the characteristic information calculated in the characteristic value calculation process in step S20.
  • the process condition correction unit 18 determines whether the electrical characteristics of the acquired element are within an appropriate range (step S52). Specifically, a reference value corresponding to the electrical characteristic of the acquired element is acquired from the reference value storage unit 15, and the two are compared to determine whether the electrical characteristic of the acquired element is an appropriate value. If the acquired electrical characteristics of the element are not within the appropriate range (No in step S52), the process condition correction unit 18 sets the process condition in which the electrical characteristics of the element have a desired value as the process management information. Obtained from the process management information in the storage unit 17 (step S53). Then, the process condition correction unit 18 corrects the process condition of the process related to the element (any one of the process steps S12 to S18) with the acquired process condition (step S54), and the process condition correction process ends. Then, the process returns to FIG.
  • step S52 when the electrical characteristics of the acquired element are within a desired range (Yes in step S52), the process condition correction unit 18 corrects the processing condition (process condition) of the process related to the element. If not performed (step S55), the process condition correction process ends, and the process returns to FIG.
  • condition correction process a plurality of correlated characteristic conditions (electrical characteristics) are separated from the measured values, and among the separated characteristic conditions, a characteristic condition deviating from a desired value (proper value) is extracted.
  • a characteristic condition deviating from a desired value proper value
  • the manufacturing processes of the thin-film solar cell module 100 processes that are not performed under appropriate conditions can be extracted.
  • the performance of the thin film solar cell module manufactured after that can be prevented from further deteriorating by changing the process condition of the manufacturing process. That is, by extracting parameters (characteristic information) indicating the suitability of processing in each processing step, it is possible to determine the suitability of the processing conditions in each processing step, and to correct the processing conditions based on the parameters. Can do.
  • step S23 tab wires are attached to the thin film solar cell modules 100 that are not to be discarded (step S23), and the plurality of thin film solar cell modules 100 are connected in series or in parallel. Subsequently, the plurality of thin film solar cell modules 100 connected by tab wires are sealed (step S24), and a thin film solar cell is manufactured. Next, the electrical property measuring unit 12 measures electrical properties of the manufactured thin film solar cell (step S25).
  • the discard determination unit 16 determines whether or not to discard the manufactured thin-film solar cell (step S26). Specifically, the discard determination unit 16 compares the measured value, which is the primary characteristic information obtained by the electrical characteristic evaluation, with the reference value indicating the standard as the product in the reference value storage unit 15, It is determined whether or not desired electrical characteristics are obtained for the thin film solar cell. When the desired electrical characteristics are obtained (No in step S26), the thin film solar cell is sorted as a product. If the desired electrical characteristics are not obtained (Yes in step S26), the thin film solar cell is discarded (step S27). Thus, the manufacturing process of the thin film solar cell is completed.
  • the subcell 140 is divided so as to operate as an integrated solar cell module.
  • various films are removed in an appropriate pattern so that the subcells 140 are connected in series.
  • a TEG pattern is newly added in the scribe processes S13, S16, and S18 so that the subcell 140 and the minicell 170 can be simultaneously formed. No additional process is necessary.
  • the addition of the process does not limit the effect of the present invention, and it is also possible to newly add steps such as lead electrode formation and insulating film formation according to the required TEG pattern. .
  • FIG. 25 is a diagram showing an example of the state of the characteristic parameters before and after correcting the CVD process conditions from the TEG measurement results.
  • the values of the recombination leak component, the power generation efficiency, and the curvature factor are normalized with the corrected value as 100%. Further, the film formation temperature and the power profile indicate process conditions changed from the TEG measurement results.
  • both the power generation efficiency and the curvature factor are degraded as compared with the corrected value (appropriate value). Further, since the recombination leak component is considerably different from that after correction (appropriate value), the deterioration of the power generation efficiency and the curvature factor is the recombination leak component, that is, the formation of the semiconductor film (photoelectric conversion cell 120) in step S14. It can be estimated that the membrane treatment is the cause.
  • the conditions for feedback correction from the TEG evaluation result include gas flow rate, pressure, substrate temperature, RF power, and condition profiling in the film thickness direction.
  • the pressure is 1200 Pa
  • the H 2 flow rate is 15 SLM
  • the SiH 4 flow rate is 0.3 SLM
  • the electrode / stage interval is 13.2 mm
  • the film forming temperature is 180 ° C.
  • the RF power profile in the film thickness direction It is assumed that the semiconductor film is formed with the initial 6 kW and the latter 6 kW.
  • the film formation temperature is changed from 180 ° C. to 160 ° C., and the process condition is corrected so that the profile in the film thickness direction of the RF power is changed from the initial 6 kW to the late 6 kW to the initial 6 kW.
  • the recombination leak component returns from 163% by changing the process conditions.
  • the power generation efficiency and the curvature factor also return from 90.6% and 97.5%, respectively. From the above, it can be confirmed that the use of the TEG evaluation results for process management is also useful in the production of thin film solar cells.
  • the process condition feedback control is performed so that the thin film solar cell module 100 can obtain desired characteristics from the measurement result using the TEG. It has the effect that it can be executed.
  • the TEG pattern is arranged in the substrate surface so as to be connected in series with the adjacent subcells, the TEG region itself also operates as a subcell (power generation region) in the module, and suppresses a decrease in characteristics due to the introduction of TEG. Has the effect of being able to.
  • the measurement result can be separated into the characteristics of the elements constituting the thin film solar cell module 100, the manufacturing process of the thin film solar cell module 100 related to the characteristics of the elements is obtained, and the thin film Even in the manufacture of the solar cell module 100, the process management can be executed.
  • a plurality of TEGs can be provided on the substrate surface, and the correlation between the measurement results makes it easier to determine the amount of correction across multiple processes, which is difficult with a single layout, allowing more complex process management. it can.

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Abstract

L'invention concerne un module de batterie solaire dans lequel des sous-cellules (140-1 à 140-3) sont formées par séparation, par des premières rainures de séparation (146), d'un film stratifié comprenant une première couche d'électrode (111), une cellule de conversion photoélectrique (120) et une seconde couche d'électrode (130), lesdites sous-cellules (140-1 à 140-3) étant connectées en série dans une seconde direction qui coupe une première direction. Le module de batterie solaire comporte un groupe de mini-cellules comprenant une pluralité de mini-cellules (170) formées dans les sous-cellules (140-1 à 140-3) par formation d'une pluralité de secondes rainures de séparation (145) s'étendant dans la seconde direction et chevauchant au moins deux desdites sous-cellules (140-1 à 140-3). Chaque rainure de séparation (146) connecte électriquement, en série, les sous-cellules (140-1 à 140-3) qui sont adjacentes l'une à l'autre dans la première direction. Chaque seconde rainure de séparation (145) isole électriquement le film stratifié entre des régions qui sont adjacentes l'une à l'autre à travers la seconde rainure de séparation (145).
PCT/JP2013/063599 2012-05-29 2013-05-15 Module de batterie solaire, son procédé de fabrication et dispositif de gestion de fabrication de module de batterie solaire WO2013179898A1 (fr)

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CN110635051A (zh) * 2019-09-23 2019-12-31 中国科学技术大学 太阳能电池组件及其制作方法
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