WO2013168398A1 - Substrat pour élément semi-conducteur, procédé de fabrication de ce substrat, élément semi-conducteur, élément de conversion photoélectrique, élément électroluminescent et circuit électronique - Google Patents

Substrat pour élément semi-conducteur, procédé de fabrication de ce substrat, élément semi-conducteur, élément de conversion photoélectrique, élément électroluminescent et circuit électronique Download PDF

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WO2013168398A1
WO2013168398A1 PCT/JP2013/002913 JP2013002913W WO2013168398A1 WO 2013168398 A1 WO2013168398 A1 WO 2013168398A1 JP 2013002913 W JP2013002913 W JP 2013002913W WO 2013168398 A1 WO2013168398 A1 WO 2013168398A1
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substrate
layer
alkali metal
semiconductor element
metal silicate
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Japanese (ja)
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佐藤　圭吾
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富士フイルム株式会社
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a semiconductor element substrate, a method for manufacturing the same, and a semiconductor element, a photoelectric conversion element, a light emitting element, and an electronic circuit using the semiconductor element substrate.
  • metal foil As solar devices and flexible organic EL devices become smaller, thinner, lighter, and more flexible, electronic devices have become more sophisticated, more functional, smaller, and lighter.
  • the insulating layer an inorganic thin film is preferably used, and a thin film formed by a coating method is preferable from the viewpoints of suitability for production and uniform film forming property in a large area.
  • aqueous solutions of alkali metal silicates such as sodium silicate are extremely inexpensive and have a low environmental impact.
  • Use an alkali metal silicate layer formed by applying this material as an insulating layer This makes it possible to manufacture a substrate with an insulating layer at low cost.
  • alkali metal silicates have low water resistance and low aging resistance. If the substrate with an alkali metal silicate layer formed by coating is stored in the atmosphere, alkali metal ions contained in the alkali metal silicate react with carbon dioxide in the atmosphere, and the alkali metal silicate layer It is known that precipitates of alkali carbonates are generated on the surface (Non-patent Document 1). In an electronic material application such as a semiconductor element, even a small amount of precipitates becomes a defect, and has a detrimental adverse effect on the device characteristics formed on the upper part.
  • the alkali metal silicate layer on the coated side has high water resistance and chemical resistance. Is one of the biggest factors that make it difficult to apply to electronic materials.
  • Non-Patent Document 1 it is empirically described that heating at 150 ° C. or higher, desirably 220 ° C. or higher is necessary to improve the water resistance of the alkali metal silicate.
  • the temperature exceeds a certain temperature, the alkali metal silicate will undergo a phase transition from glass to crystal, so that it is expected that there is an upper limit to the heat treatment temperature.
  • Non-Patent Document 3 shows a phase diagram for N 2 O—SiO 2 glass, and the glass transition temperature is approximately 500 ° C. to 600 ° C., depending on the composition. Transition to material.
  • the upper limit temperature of the heat treatment is estimated to be about 500 ° C to 600 ° C.
  • heat treatment at a temperature as high as possible at a temperature up to about 600 ° C. is resistant to deterioration over time, It has been found preferable in terms of improving chemical resistance and the like.
  • the heat treatment temperature is limited by the heat-resistant temperature of the substrate, and it goes without saying that heat treatment at a lower temperature is preferable from the viewpoint of production suitability and production cost.
  • the generation of fine precipitates in the alkali metal silicate layer is unavoidable over time as described above, and the alkali metal silicate layer is deteriorated. Further, there is a problem that sufficient water resistance cannot be ensured due to this deterioration, and a side reaction with the functional layer formed on the alkali metal silicate layer occurs. In these problems, defects are introduced into the upper device layer, resulting in deterioration of device characteristics.
  • the present invention has been made in view of the above circumstances, and suppresses the generation of fine precipitates in the alkali metal silicate layer formed by coating, and on the alkali metal silicate layer by ensuring water resistance.
  • SEMICONDUCTOR ELEMENT SUBSTRATE METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR USING SEMICONDUCTOR ELEMENT SUBSTRATE It is an object to provide an element, a photoelectric conversion element, a light emitting element, and an electronic circuit.
  • the substrate for a semiconductor element of the present invention has an alkali metal silicate layer formed on the substrate by a liquid phase method, and the contact angle of water on the surface of the alkali metal silicate layer is 20 ° or more and 90 ° or less. It is characterized by being.
  • the alkali metal of the alkali metal silicate layer is preferably sodium.
  • the alkali metal preferably contains two kinds of lithium or potassium and sodium.
  • the thickness of the alkali metal silicate layer is preferably 2 ⁇ m or less.
  • the substrate is preferably a metal substrate.
  • the metal substrate preferably has an anodized aluminum film formed on the surface thereof.
  • the metal substrate is preferably a clad material in which one or both surfaces of aluminum, stainless steel, or steel plate are integrated with an aluminum plate.
  • the anodized aluminum film is a porous anodized aluminum film, and the porous anodized aluminum film preferably has a compressive stress.
  • an alkali metal silicate film is formed on the substrate by applying a solution containing an alkali metal silicate on the substrate, and then under a pressure lower than atmospheric pressure. It is characterized by heat treatment.
  • the semiconductor element of the present invention is formed on the semiconductor element substrate.
  • the photoelectric conversion element of the present invention is formed on the semiconductor element substrate.
  • the light emitting device of the present invention is formed on the substrate for a semiconductor device.
  • the electronic circuit of the present invention is formed on the semiconductor element substrate.
  • the substrate for a semiconductor element of the present invention Since the contact angle of water on the surface of the alkali metal silicate layer formed on the substrate by the liquid phase method is 20 ° or more and 90 ° or less, the substrate for a semiconductor element of the present invention has a very small alkali metal silicate layer. Generation of precipitates can be suppressed and water resistance can be ensured. Therefore, side reactions with the functional layer formed on the alkali metal silicate layer can be suppressed, and the characteristics of the device formed on the substrate can be improved. It can be held stably.
  • FIG. 1 It is a schematic diagram which shows the structure of the outermost surface of the alkali metal silicate layer in the heat processing under atmospheric pressure and a vacuum. It is a schematic sectional drawing which shows one Embodiment of the compound semiconductor type solar cell element using the board
  • the alkali metal silicate layer in the substrate for a semiconductor element of the present invention is formed by a liquid phase method, and the contact angle of water on the surface of the formed alkali metal silicate layer is 20 ° or more and 90 ° or less.
  • the alkali metal of the alkali metal silicate layer is preferably sodium, and more preferably contains two types of sodium and lithium or potassium, such as lithium and sodium, or potassium and sodium.
  • Preferred examples of the silicon source and alkali metal source of the alkali metal silicate layer formed by the liquid phase method include sodium silicate, lithium silicate, and potassium silicate.
  • Known methods for producing sodium silicate, lithium silicate, and potassium silicate include wet methods and dry methods. Silicon oxide is dissolved in sodium hydroxide, lithium hydroxide, and potassium hydroxide, respectively. Can be produced.
  • alkali metal silicates having various molar ratios are commercially available and can be used.
  • lithium silicate As sodium silicate, lithium silicate, and potassium silicate, various molar ratios of sodium silicate, lithium silicate, and potassium silicate are commercially available.
  • the SiO 2 / A 2 O (A: alkali metal) molar ratio is often used as an index indicating the ratio of silicon and alkali metal.
  • lithium silicate there are lithium silicate 35, lithium silicate 45, lithium silicate 75, etc. manufactured by Nissan Chemical Industries, Ltd.
  • potassium silicate No. 1 potassium silicate, No. 2 potassium silicate and the like are commercially available.
  • sodium silicate sodium orthosilicate, sodium metasilicate, No. 1 sodium silicate, No. 2 sodium silicate, No. 3 sodium silicate, No. 4 sodium silicate, etc. are known, and the molar ratio of silicon is up to several tens. Elevated high mol sodium silicate is also commercially available.
  • the alkali metal contains two types of sodium and lithium or potassium
  • the two types of sodium silicate and lithium silicate, sodium silicate and potassium silicate may be used as the source.
  • the alkali metal silicate layer includes lithium silicate and sodium silicate, lithium silicate and sodium hydroxide, or lithium hydroxide and sodium silicate
  • the alkali metal silicate layer and potassium silicate When sodium silicate is included, potassium silicate and sodium silicate or potassium silicate and sodium hydroxide can be mixed with water at an arbitrary ratio to form lithium silicate and sodium silicate or silica.
  • Alkali metal silicate layers containing potassium silicate and sodium silicate can be made .
  • the coating solution for the alkali metal silicate layer of the present invention can be obtained by mixing the silicon source and the alkali metal source with water at an arbitrary ratio. By changing the amount of water added, the viscosity of the coating solution can be adjusted to determine appropriate coating conditions.
  • a doctor blade method, a wire bar method, a gravure method, a spray method, a dip coating method, a spin coating method, a capillary coating method, or the like may be used. it can.
  • An alkali metal silicate layer can be prepared by applying a heat treatment after applying the coating solution on the substrate.
  • the heat treatment at this time is performed under a pressure lower than atmospheric pressure, preferably 1 ⁇ 10 4 Pa.
  • the contact angle of water on the surface of the alkali metal silicate layer is preferably carried out in an atmosphere having a total pressure of 1 ⁇ 10 2 Pa or less, more preferably 1 Pa or less, and particularly preferably 1 ⁇ 10 ⁇ 2 Pa or less. Can be 20 ° or more and 90 ° or less.
  • FIG. 1 is a schematic diagram showing the structure of the outermost surface of an alkali metal silicate layer (liquid phase SLG) in heat treatment under atmospheric pressure and vacuum.
  • silanol groups Si—OH
  • an alkali metal silicate layer is prepared by performing a heat treatment under atmospheric pressure, a compound having a functional group that undergoes a condensation reaction with a silanol group on the surface of the prepared alkali metal silicate layer (having a hydrophobic functional group) It is possible to reduce the silanol group density on the outermost surface by a method of binding and adsorbing a compound or a surfactant collectively called a silane coupling agent having a water contact angle on the surface of the alkali metal silicate layer. It can be set to 20 ° or more and 90 ° or less.
  • the contact angle can be set to 20 ° or more and 90 ° or less by performing heat treatment under a pressure lower than atmospheric pressure, preferably under an atmosphere having a total pressure of 1 ⁇ 10 4 Pa or less. Deterioration of the alkali metal silicate layer can be suppressed.
  • an alkali metal silicate layer with little deterioration can be formed, and an insulating layer, a planarization layer, a pore blocking layer, or a CIGS solar cell can be formed.
  • the substrate used in the present invention is preferably a clad substrate in which aluminum and a dissimilar metal are combined and an anodized film is formed on the aluminum surface.
  • the clad substrate is known to have high heat resistance without cracking of the anodized film even at a high temperature of 400 ° C. or higher. It is also known that compressive stress can be applied to the anodized film by heat-treating the substrate at 300 ° C. or higher in advance, heat resistance can be further improved, and long-term reliability of insulation can be ensured.
  • the thickness of the alkali metal silicate layer after the heat treatment is 0.01 to 2 ⁇ m, preferably 0.05 to 1.5 ⁇ m, more preferably 0.1 to 1 ⁇ m. If the thickness of the alkali metal silicate layer is greater than 2 ⁇ m, the amount of shrinkage of the alkali metal silicate during the heat treatment increases and cracks are likely to occur, which is not preferable.
  • the substrate for a semiconductor element of the present invention can be used as a substrate for a semiconductor device.
  • semiconductor elements such as light-emitting diodes and semiconductor lasers that convert electrical energy into light, or conversely photodiodes that are elements that convert light into electrical energy, photoelectric conversion elements such as solar cells, resistors, transistors, diodes, coils, etc.
  • a light emitting element such as an electronic circuit, LED, or organic EL provided with the above electronic element.
  • a photoelectric conversion element a compound semiconductor solar cell and an organic thin film solar cell (a solar cell comprising an organic photoelectric conversion element), an organic EL (organic electroluminescence, an organic electric field)
  • an organic EL organic electroluminescence, an organic electric field
  • the light emitting element will be described.
  • the structure of a semiconductor element and an electronic circuit is what the photoelectric conversion element part of the solar cell demonstrated below and the light emitting element part of organic EL changed to various semiconductor elements and electronic circuits, The structure and manufacturing method are Since it is publicly known, it is omitted.
  • FIG. 2 is a schematic cross-sectional view showing one embodiment of a photoelectric conversion element of a compound semiconductor solar cell.
  • the photoelectric conversion element 10 includes an anodized film 12 formed by anodic oxidation, an alkali metal silicate layer 13, a lower electrode 14, and holes /
  • a photoelectric conversion semiconductor layer 15 that generates electron pairs, a buffer layer 16, a translucent conductive layer (transparent electrode) 17, and an upper electrode (grid electrode) 18 are sequentially stacked.
  • FIG. 2 shows a photoelectric conversion element in which an anodized film 12 formed by anodization and an alkali metal silicate layer 13 are formed on a substrate 11, but as shown in FIG.
  • An embodiment in which an alkali metal silicate layer 13 is formed on the substrate 11 may be used (in FIG. 3, the same components as those in FIG. 2 are given the same numbers). .
  • each layer will be described.
  • a ceramic substrate such as alkali-free glass, quartz glass, or alumina
  • a metal substrate such as stainless steel, titanium foil, or silicon
  • a polymer substrate such as polyimide
  • a metal substrate is particularly preferable.
  • a material in which a metal oxide film generated on the surface of a metal substrate by anodic oxidation becomes an insulator can be used.
  • a substrate containing one metal or an alloy of the above metals is preferred.
  • a clad material in which one or both surfaces of aluminum, stainless steel, or steel plate are integrated with an aluminum plate is more preferable from the viewpoint of easy formation of anodization and high durability.
  • an integrated clad material with both surfaces sandwiched between aluminum plates it is possible to suppress substrate warpage due to the difference in thermal expansion coefficient between aluminum and the oxide film (Al 2 O 3 ), and film peeling due to this. Therefore, it is more preferable.
  • cleaning treatment / polishing smoothing treatment if necessary, for example, a degreasing step for removing the adhering rolling oil, a desmut treatment step for dissolving the smut on the surface of the aluminum plate, and roughening the surface of the aluminum plate It is preferable to use one subjected to a roughening treatment step.
  • the anodic oxide film formed by anodic oxidation is obtained by forming an insulating oxide film having a plurality of pores by anodic oxidation, thereby ensuring high insulation.
  • Anodization can be performed by immersing the substrate 11 as an anode in an electrolyte together with a cathode and applying a voltage between the anode and the cathode. Carbon, aluminum, or the like is used as the cathode.
  • the anodizing conditions are not particularly limited depending on the type of electrolyte used.
  • the conditions are, for example, an electrolyte concentration of 0.1 to 2 mol / L, a liquid temperature of 5 to 80 ° C., a current density of 0.005 to 0.60 A / cm 2 , a voltage of 1 to 200 V, and an electrolysis time of 3 to 500 minutes. Is appropriate.
  • the electrolyte is not particularly limited, and an acidic electrolytic solution containing one or more acids such as sulfuric acid, phosphoric acid, chromic acid, oxalic acid, malonic acid, sulfamic acid, benzenesulfonic acid, and amidosulfonic acid is preferable. Used.
  • an electrolyte concentration of 0.2 to 1 mol / L, a liquid temperature of 10 to 80 ° C., a current density of 0.05 to 0.30 A / cm 2 , and a voltage of 30 to 150 V are preferable.
  • the anodic oxide film is preferably composed of a barrier layer portion and a porous layer portion, and the porous layer portion has a compressive strain at room temperature.
  • the barrier layer has compressive stress and the porous layer has tensile stress, it is known that the whole anodic oxide film becomes tensile stress in a thick film of several ⁇ m or more.
  • a porous layer having a compressive stress can be produced.
  • the entire anodic oxide film can be subjected to compressive stress, no cracking occurs due to the difference in thermal expansion during film formation, and long-term reliability near room temperature is excellent. Insulating film can be obtained.
  • the magnitude of the compressive strain is preferably 0.01% or more, more preferably 0.05% or more, and particularly preferably 0.10% or more. Moreover, it is preferable that it is 0.25% or less.
  • the compressive strain is less than 0.01%, although it is compressive strain, it is insufficient and the effect of crack resistance cannot be obtained. Therefore, when the final product is subjected to bending strain, undergoes a temperature cycle over a long period of time, or receives impact or stress from the outside, cracks occur in the anodized film formed as an insulating layer, resulting in insulating properties. Leading to a decline.
  • the compressive strain is preferably 0.25% or less.
  • the Young's modulus of the anodic oxide film is known to be about 50 to 150 GPa. Therefore, the magnitude of the compressive stress is preferably about 5 to 300 MPa.
  • the heat treatment may be performed after the anodizing treatment.
  • compressive stress is applied to the anodized film, and crack resistance is increased. Therefore, heat resistance and insulation reliability are improved, and the metal substrate with an insulating layer can be more suitably used.
  • the heat treatment temperature is preferably 150 ° C. or higher. When the above clad material is used, heat treatment at 300 ° C. or higher is preferable. By performing the heat treatment in advance, the amount of water contained in the porous anodic oxide film can be reduced, and the insulation can be improved.
  • An anodized film is an oxide film formed in an aqueous solution, and it is described in, for example, “Chemistry Letters Vol. 34, No. 9, (2005) p1286” that moisture is retained inside a solid.
  • aqueous solution As known. From the solid-state NMR measurement of the anodic oxide film as in this document, it was found that the amount of water (OH group) inside the solid of the anodic oxide film decreased when heat-treated at 100 ° C. or higher, particularly at 200 ° C. or higher. is there. Therefore, it is presumed that the combined state of Al—O and Al—OH changes due to heating and stress relaxation (annealing effect) occurs.
  • the anodic oxide film preferably has a thickness of 3 to 50 ⁇ m.
  • a film thickness of 3 ⁇ m or more it is possible to achieve both insulation, heat resistance during film formation by having compressive stress at room temperature, and long-term reliability.
  • the film thickness is preferably 5 ⁇ m or more and 30 ⁇ m or less, and particularly preferably 5 ⁇ m or more and 20 ⁇ m or less.
  • the film thickness is extremely thin, there is a possibility that damage due to mechanical insulation during handling and electrical insulation cannot be prevented. In addition, the insulation and heat resistance are drastically lowered, and deterioration with time is also increased. This is because the influence of the unevenness on the surface of the anodized film becomes relatively large due to the thin film thickness, the crack becomes the starting point of cracks, and the anodization derived from metal impurities contained in aluminum. The effect of metal precipitates, intermetallic compounds, metal oxides, and voids in the film is relatively large, resulting in a decrease in insulation, and breakage when the anodized film is subjected to external impact or stress. This is because cracks are likely to occur. As a result, when the anodic oxide film is less than 3 ⁇ m, the insulating property is lowered, so that it is not suitable for use as a flexible heat-resistant substrate or for production by roll-to-roll.
  • the cause of the decrease in bending resistance is that when the anodized film is bent, the tensile stress at the interface between the surface and the aluminum differs, so the stress distribution in the cross-sectional direction increases and local stress concentration occurs. This is presumed to be easier.
  • the cause of the decrease in thermal strain resistance is that when a tensile stress is applied to the anodized film due to the thermal expansion of the base material, a greater stress is applied to the interface with aluminum, and the stress distribution in the cross-sectional direction increases, resulting in local stress. It is estimated that this is because stress concentration tends to occur.
  • the anodic oxide film exceeds 50 ⁇ m, bending resistance and thermal strain resistance are lowered, so that it is not suitable for use as a flexible heat-resistant substrate or roll-to-roll production. Also, the insulation reliability is lowered.
  • the component of the lower electrode (back electrode) is not particularly limited, and Mo, Cr, W, and combinations thereof are preferable, and Mo and the like are particularly preferable.
  • the film thickness of the lower electrode (back electrode) 40 is not limited and is preferably about 200 to 1000 nm.
  • the photoelectric conversion semiconductor layer is a compound semiconductor-based photoelectric conversion semiconductor layer, and is not particularly limited as a main component (the main component means a component of 20% by mass or more), and a high photoelectric conversion efficiency is obtained.
  • a semiconductor, a compound semiconductor having a chalcopyrite structure, or a compound semiconductor having a defect stannite structure can be preferably used.
  • I-III-VI Group 2 compounds CuInSe 2 , CuGaSe 2 , Cu (In, Ga) Se 2 , CuInS 2 , CuGaSe 2 , Cu (In, Ga) (S, Se) 2, etc.
  • I-III 3 -VI 5 group compounds Culn 3 Se 5 , CuGa 3 Se 5 , Cu (ln, Ga) 3 Se 5 and the like.
  • I-III-VI Group 2 compounds CuInSe 2 , CuGaSe 2 , Cu (In, Ga) Se 2 , CuInS 2 , CuGaSe 2 , Cu (In, Ga) (S Se) 2, etc.
  • I-III 3 -VI 5 group compounds CuIn 3 Se 5 , CuGa 3 Se 5 , Cu (In, Ga) 3 Se 5 and the like can be preferably mentioned.
  • the method for forming the photoelectric conversion semiconductor layer is not particularly limited.
  • a CI (G) S-based photoelectric conversion semiconductor layer containing Cu, In, (Ga), and S can be formed using a method such as a selenization method or a multi-source evaporation method.
  • the film thickness of the photoelectric conversion semiconductor layer 50 is not particularly limited, and is preferably 1.0 to 3.0 ⁇ m, particularly preferably 1.5 to 2.0 ⁇ m.
  • the buffer layer is not particularly limited, but CdS, ZnS, Zn (S, O) and / or Zn (S, O, OH), SnS, Sn (S, O) and / or Sn (S, O, OH), It contains a metal sulfide containing at least one metal element selected from the group consisting of Cd, Zn, Sn, and In, such as InS, In (S, O) and / or In (S, O, OH). preferable.
  • the thickness of the buffer layer 40 is preferably 10 nm to 2 ⁇ m, and more preferably 15 to 200 nm.
  • the translucent conductive layer is a layer that captures light and functions as an electrode through which a current generated in the photoelectric conversion layer flows while paired with the lower electrode.
  • the composition of the translucent conductive layer is not particularly limited, and n-ZnO such as ZnO: Al is preferable.
  • the film thickness of the translucent conductive layer is not particularly limited, and is preferably 50 nm to 2 ⁇ m.
  • the thickness of the upper electrode 80 is not particularly limited and is preferably 0.1 to 3 ⁇ m.
  • a cover glass, a protective film, or the like can be attached to the photoelectric conversion element 10 to obtain a semiconductor solar cell.
  • FIG. 4 is a schematic cross-sectional view showing one embodiment of a photoelectric conversion element (organic electronic device) of an organic solar cell element.
  • the organic electronic device 20 includes an alkali metal silicate layer 23, a transparent electrode layer 24, an organic active layer 25, an n-type oxide semiconductor layer 26, a metal electrode layer 27, and an upper sealing member 28 in this order on a substrate 21. It is laminated.
  • each layer will be described.
  • Each layer can be provided by a known method according to the material constituting the layer.
  • substrate 21 and the alkali metal silicate layer 23 are the same as that of what was demonstrated by the said compound semiconductor type solar cell, it abbreviate
  • substrate 21 and the alkali metal silicate layer 23 is the same as that of the said compound semiconductor type solar cell.
  • the transparent electrode layer is a layer containing at least a transparent conductive material.
  • a transparent electrode layer is a positive electrode normally in an organic thin film solar cell.
  • the transparent electrode layer needs to be transparent in the emission spectrum or action spectrum range of the organic electronic device to be applied, and usually needs to be excellent in light transmittance from visible light to near infrared light.
  • the average light transmittance of the formed layer in the wavelength region of 400 nm to 800 nm is 50% or more and 75% or more. Preferably, it is 85% or more.
  • the transparent conductive material used for the transparent electrode layer is required to have high conductivity, and the specific resistance after film formation is preferably 8 ⁇ 10 ⁇ 3 ⁇ ⁇ cm or less.
  • the transparent conductive material is a metal oxide (indium-tin oxide, antimony oxide, aluminum-zinc oxide, boron-zinc oxide, tin fluoride oxide, etc.) , Dispersions of conductive nanomaterials (eg, silver nanowires, carbon nanotubes, graphene, etc.) on acrylic polymers, etc., conductive polymers (eg, polythiophene, polypyrrole, polyaniline, polyphenylene vinylene, polyphenylene, polyacetylene, polyquinoxaline, poly Oxadiazole, polybenzothiadiazole and the like, and polymers having a plurality of these conductive skeletons).
  • the organic active layer means a layer of an organic material that functions as an organic electronic device.
  • examples of the organic active layer include a hole transport layer, a hole injection layer, a hole block layer, an electron transport layer, an electron injection layer, an electron block layer, and a photoelectric conversion layer.
  • the laminated body of a hole transport layer and an electron carrying layer may serve as a photoelectric converting layer. Details of the organic active layer will be described below.
  • the electron blocking layer is a hole transport layer that is located between the transparent electrode layer and the photoelectric conversion layer and has a function of blocking electrons from moving from the photoelectric conversion layer to the transparent electrode layer.
  • a material having a function of blocking the movement of electrons is an organic compound having a HOMO level of 5.5 eV or less and a LUMO level of 3.3 eV or less. Specific examples of such an organic compound include aromatic amine derivatives, thiophene derivatives, condensed aromatic ring compounds, carbazole derivatives, polyaniline, polythiophene, and polypyrrole. In addition, Chem. Rev. The group of compounds described as Hole Transport material in 2007, 107, 953-1010 is also applicable.
  • the thickness of the electron blocking layer is preferably 0.1 nm or more and 50 nm or less. A more preferred thickness is in the range of 1 nm to 20 nm.
  • the hole transport layer contains a hole transport material.
  • the hole transport material is a ⁇ -electron conjugated compound having a HOMO level of 4.5 eV to 6.0 eV, specifically, various arenes (for example, thiophene, carbazole, fluorene, silafluorene, thienopyrazine, thienobenzothiophene, Examples include conjugated polymers obtained by coupling dithienosilol, quinoxaline, benzothiadiazole, thienothiophene, etc.), phenylene vinylene polymers, porphyrins, phthalocyanines, and the like.
  • the compound group described as Hole Transport material in 2007, 107, 953-1010 and the porphyrin derivative described in Journal of the American Chemical Society Vol. 131, page 16048 (2009) are also applicable.
  • the thickness of the hole transport layer is preferably 5 to 500 nm, and particularly preferably 10 to 200 nm.
  • the hole injection layer is included in the concept of the hole transport layer.
  • the electron transport layer is made of an electron transport material.
  • the electron transport material is a ⁇ -electron conjugated compound having a LUMO level of 3.5 eV to 4.5 eV.
  • fullerene and its derivatives, phenylene vinylene polymers, naphthalene tetracarboxylic imide derivatives, perylene tetra Examples thereof include carboxylic acid imide derivatives. Of these, fullerene derivatives are preferred.
  • fullerene derivative examples include C 60 , phenyl-C 61 -methyl butyrate (fullerene derivative referred to as PCBM, [60] PCBM, or PC 61 BM in the literature), C 70 , phenyl-C 71 -methyl butyrate (Fullerene derivatives referred to as PCBM, [70] PCBM, or PC 71 BM in many literatures), and fullerene derivatives described in Advanced Functional Materials Vol. 19, pp. 779-788 (2009), journal Examples of the fullerene derivative SIMEF and the like described in The American Chemical Society Vol. 131, page 16048 (2009).
  • the thickness of the electron transport layer is preferably 5 to 500 nm, and particularly preferably 10 to 200 nm.
  • the electron injection layer and the hole block layer are included in the concept of the electron transport layer.
  • the photoelectric conversion layer may be a planar heterostructure composed of a hole transport layer and an electron transport layer, or a bulk heterostructure in which a hole transport material and an electron transport material are mixed.
  • the positive electrode side is a hole transport layer and the negative electrode side is an electron transport layer.
  • middle layer of a planar heterostructure may be sufficient.
  • the bulk hetero layer is a photoelectric conversion layer in which a hole transport material and an electron transport material are mixed.
  • the mixing ratio of the hole transport material and the electron transport material contained in the bulk hetero layer is adjusted so that the conversion efficiency is the highest.
  • the mixing ratio of the hole transport material and the electron transport material is usually selected from the range of 10:90 to 90:10 by mass ratio.
  • a method for forming such a mixed organic layer for example, a co-evaporation method by vacuum deposition may be mentioned.
  • the film thickness of the bulk hetero layer is preferably 10 nm to 500 nm, particularly preferably 20 nm to 300 nm.
  • the n-type oxide semiconductor layer is an electron transport layer, and the material thereof is an n-type inorganic oxide semiconductor (for example, titanium oxide, zinc oxide, tin oxide, tungsten oxide, or the like). Among these, titanium oxide and zinc oxide are preferable.
  • the film thickness of the n-type oxide semiconductor (inorganic electron transport layer) is 1 nm to 30 nm, preferably 2 nm to 15 nm.
  • the electron transport layer made of an n-type oxide semiconductor can be suitably formed by any of various film forming methods, dry film forming methods such as vapor deposition and sputtering, transfer methods, and printing methods.
  • the metal electrode layer is usually a negative electrode.
  • the negative electrode is usually a metal having a relatively small work function, and examples thereof include aluminum, magnesium, silver, and a silver-magnesium alloy.
  • an electron injection layer of 0.1 to 5 nm such as lithium fluoride or lithium oxide may be provided.
  • the film thickness of the negative electrode is 10 nm to 500 nm, preferably 50 nm to 300 nm.
  • the organic electronic device is isolated from the ambient atmosphere by the upper sealing member.
  • the upper sealing member may include a known gas barrier layer, or may include a known protective layer, adhesive layer, or plastic support.
  • FIG. 5 is a schematic cross-sectional view showing an embodiment of an organic EL.
  • the organic EL element 30 includes an alkali metal silicate layer 33, an anode 34, a hole injection layer 35, a hole transport layer 36, a light emitting layer 37, an electron transport layer 38, and an electron on a substrate 31.
  • the injection layer 39 and the cathode 40 are laminated in this order.
  • the anode 34 and the cathode 40 are connected to each other via a power source.
  • each layer will be described.
  • Each layer can be provided by a known method according to the material constituting the layer.
  • the substrate 31 and the alkali metal silicate layer 33 are the same as those described in the compound semiconductor solar cell, and will be omitted. Moreover, the point which may have an anodic oxide film between the board
  • substrate 31 and the alkali metal silicate layer 33 is the same as that of the said compound semiconductor type solar cell.
  • the hole injection layer and the hole transport layer are layers having a function of receiving holes from the anode or the anode side and transporting them to the cathode side.
  • the hole injection material and hole transport material used for these layers may be a low molecular compound, a high molecular compound, or an inorganic compound.
  • the hole injection material and the hole transport material are not particularly limited and may be appropriately selected depending on the purpose.
  • pyrrole derivatives for example, pyrrole derivatives, carbazole derivatives, triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, Polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amine compounds, styrylamine Compounds, aromatic dimethylidin compounds, phthalocyanine compounds, porphyrin compounds, thiophene derivatives, organic silane derivatives, carbon, molybdenum trioxide, and the like.
  • the thicknesses of the hole injection layer and the hole transport layer are preferably 1 nm to 500 nm, more preferably 5 nm to 200 nm, and particularly preferably 10 nm to 100 nm.
  • the light emitting layer includes at least a host material and a phosphorescent light emitting material, and the host material is not particularly limited and may be appropriately selected depending on the purpose.
  • the host material is not particularly limited and may be appropriately selected depending on the purpose.
  • an electron transporting host material a hole transporting host material Etc.
  • the electron transporting host material is not particularly limited and may be appropriately selected depending on the intended purpose.
  • examples thereof include azine derivatives such as pyridine derivatives, pyrimidine derivatives and triazine derivatives, imidazoles, pyrazoles, triazoles and oxazoles.
  • Azole derivatives such as oxadiazol, fluorenone, anthraquinodimethane, anthrone, diphenylquinone, thiopyran dioxide, carbodiimide, fluorenylidenemethane, distyrylpyrazine, fluorine-substituted aromatic compounds, benzimidazole derivatives, imidazopyridine derivatives , Phthalocyanine, metal complexes of 8-quinolinol derivatives, metal phthalocyanine, benzoxazole, metal complexes having benzothiazole as a ligand, and the like.
  • the hole transporting host material is not particularly limited and may be appropriately selected depending on the purpose.
  • indole derivatives carbazole derivatives, azaindole derivatives, azacarbazole derivatives, aromatic tertiary amine compounds, and thiophene derivatives are preferable.
  • Those having an aromatic group tertiary amine skeleton are more preferred, and compounds having a carbazole skeleton are particularly preferred.
  • the hole-transporting host material a material obtained by substituting part or all of the hydrogen in the hole-transporting host material with deuterium can also be used.
  • the complex etc. which contain a transition metal atom and a lanthanoid atom are mentioned. These may be used alone or in combination of two or more.
  • the transition metal atom include ruthenium, rhodium, palladium, tungsten, rhenium, osmium, iridium, platinum, and the like. Among these, rhenium, iridium, and platinum are preferable, and iridium and platinum are particularly preferable.
  • Examples of the lanthanoid atom include lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium.
  • neodymium, europium, and gadolinium are particularly preferable.
  • the complex ligand examples include aromatic carbocyclic ligands such as halogen ligands, cyclopentadienyl anion, benzene anion, and naphthyl anion, and phenylpyridine, benzoquinoline, quinolinol, bipyridyl, phenanthroline, and the like.
  • a nitrogen-containing heterocyclic ligand is particularly preferable.
  • the thickness of the light emitting layer is preferably 1 nm to 100 nm, more preferably 3 nm to 50, and particularly preferably 10 nm to 30 nm.
  • the electron transport layer and the electron injection layer are layers having a function of receiving electrons from the cathode or the cathode side and transporting them to the anode side.
  • the material for the electron transport layer and the electron injection layer is not particularly limited and can be appropriately selected according to the purpose.
  • quinoline derivatives, oxadiazole derivatives, triazole derivatives, phenanthroline derivatives, perylene derivatives, pyridine derivatives examples include pyrimidine derivatives, quinoxaline derivatives, diphenylquinone derivatives, and nitro-substituted fluorene derivatives.
  • quinoline derivatives examples include 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (bathocuproine; BCP), BCP doped with Li, tris (8-quinolinolato) aluminum (Alq), etc. And organometallic complexes having 8-quinolinol or a derivative thereof as a ligand, BAlq (bis- (2-methyl-8-quinolinolato) -4- (phenyl-phenolato) -aluminum (III)), and the like. Among these, BCP doped with Li and BAlq are particularly preferable.
  • the thickness of the electron transport layer is not particularly limited and may be appropriately selected depending on the intended purpose.
  • the thickness is preferably 1 nm to 500 nm, and more preferably 10 nm to 50 nm.
  • the thickness of the electron injection layer is not particularly limited and may be appropriately selected depending on the purpose.
  • the thickness is preferably 0.1 nm to 200 nm, more preferably 0.2 nm to 100 nm, and particularly preferably 0.5 nm to 50 nm.
  • the anode is not particularly limited as long as it has a function as an electrode for supplying holes to the light emitting layer.
  • at least one of the anode and the cathode is preferably transparent.
  • the material constituting the anode include conductive oxides such as antimony, fluorine-doped tin oxide (ATO, FTO), tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and zinc indium oxide (IZO).
  • Metal oxides metals such as gold, silver, chromium and nickel, mixtures or laminates of these metals and conductive metal oxides, inorganic conductive materials such as copper iodide and copper sulfide, polyaniline, polythiophene and polypyrrole Organic conductive materials such as these, and laminates of these and ITO.
  • the material constituting the cathode include alkali metals, alkaline earth metals, rare earth metals, other metals, alloys of these metals, and the like.
  • the thickness of the anode is not particularly limited and may be appropriately selected depending on the material, but is preferably 10 nm to 5 ⁇ m, and the thickness of the cathode is preferably 10 nm to 1,000 nm.
  • the substrate for a semiconductor device of the present invention will be described in more detail with reference to examples.
  • This coating solution was applied on a SUS430 substrate (thickness: 100 ⁇ m), and heat treatment was performed in an atmosphere shown in Table 1.
  • Example 4 after heat treatment, it was immersed in a 1% methyltrimethoxysilane / methanol solution and then dried.
  • a CIGS solar cell was formed on the Mo electrode.
  • granular raw materials of high-purity copper and indium (purity 99.9999%), high-purity Ga (purity 99.999%), and high-purity Se (purity 99.999%) were used as the evaporation source.
  • a chromel-alumel thermocouple was used as a substrate temperature monitor. After the main vacuum chamber is evacuated to 10 ⁇ 6 Torr (1.3 ⁇ 10 ⁇ 3 Pa), the deposition rate from each evaporation source is controlled, and the film thickness is about 530 ° C. under the film forming conditions. A 1.8 ⁇ m CIGS thin film was formed.
  • a CdS thin film of about 90 nm was deposited as a buffer layer by a solution growth method, and a ZnO: A1 film of a transparent conductive film was formed thereon with a thickness of 0.6 ⁇ m by a DC sputtering method.
  • an Al grid electrode was formed as an upper electrode by a vapor deposition method to produce a solar battery cell.
  • the contact angle of water on the surface of the alkali metal silicate layer is 20 ° or more and 90 ° or less as shown in FIG.
  • Comparative Example 1 1000 or more foreign matters were observed per 1 mm square, and it can be seen that the difference is conspicuous.
  • the leakage current was low in the example, whereas the leakage current was significantly high in the comparative example. This is presumed that the insulating properties of the silicate layer were lowered due to the influence of precipitates.
  • the photoelectric conversion efficiency was significantly high in the solar cell of the example. In the solar cell of the comparative example, it is estimated that a defect occurred in the upper device due to the influence of the precipitate.
  • Example 11 Comparative Example 11
  • a 10 ⁇ m anodic oxide film is formed on both surfaces of a 50 ⁇ m aluminum foil, a coating solution prepared according to the same formulation as in Example 1 is applied, and heat treatment is performed at 200 ° C. in the atmosphere shown in Table 2 to form a semiconductor element substrate. Produced.
  • (contact angle) was measured and (aging deterioration) was evaluated.
  • Example 11 On the substrates of Example 11 and Comparative Example 11, Ag was vacuum deposited to provide a lower electrode (positive electrode). Next, a strongly acidic polymer, polyethylene dioxythiophene / polystyrene sulfonic acid complex (PEDOT-PSS), was spin-coated at 140 ° C. to provide a hole transport layer. Subsequently, P3HT (poly-3-hexylthiophene, Lisicon SP-001 (trade name), manufactured by Merck) -ICBA was spin-coated at 140 ° C. to provide a photoelectric conversion layer. On top of this, Al / Ag / ITO was vacuum-deposited / sputtered at 160 ° C.
  • PEDOT-PSS polyethylene dioxythiophene / polystyrene sulfonic acid complex

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Abstract

Le problème décrit par la présente invention est d'assurer la résistance à l'eau d'un substrat pour un élément semi-conducteur et de permettre un bon maintien des caractéristiques d'un dispositif formé sur ce substrat tout en évitant les réactions secondaires avec une couche fonctionnelle qui se trouve sur le dessus. La solution selon l'invention porte sur un substrat destiné à un élément semi-conducteur, qui possède une couche de silicate de métal alcalin (13) obtenue grâce à un procédé en phase liquide sur un substrat (11). L'angle de contact de l'eau sur la surface de la couche de silicate de métal alcalin (13) est de 20 à 90°.
PCT/JP2013/002913 2012-05-11 2013-05-02 Substrat pour élément semi-conducteur, procédé de fabrication de ce substrat, élément semi-conducteur, élément de conversion photoélectrique, élément électroluminescent et circuit électronique WO2013168398A1 (fr)

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WO2002062872A1 (fr) * 2001-02-08 2002-08-15 Asahi Kasei Kabushiki Kaisha Materiaux complexes du domaine organique/anorganique et leur utilisation
JP2005117012A (ja) * 2003-09-17 2005-04-28 Matsushita Electric Ind Co Ltd 半導体膜とその製造方法、およびそれを用いた太陽電池とその製造方法
JP2006210424A (ja) * 2005-01-25 2006-08-10 Honda Motor Co Ltd カルコパイライト型薄膜太陽電池の製造方法
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WO2002062872A1 (fr) * 2001-02-08 2002-08-15 Asahi Kasei Kabushiki Kaisha Materiaux complexes du domaine organique/anorganique et leur utilisation
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