WO2013161030A1 - Module de cellules solaires et procédé de production de module de cellules solaires - Google Patents
Module de cellules solaires et procédé de production de module de cellules solaires Download PDFInfo
- Publication number
- WO2013161030A1 WO2013161030A1 PCT/JP2012/061203 JP2012061203W WO2013161030A1 WO 2013161030 A1 WO2013161030 A1 WO 2013161030A1 JP 2012061203 W JP2012061203 W JP 2012061203W WO 2013161030 A1 WO2013161030 A1 WO 2013161030A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- cell module
- connection member
- unevenness
- electrode part
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 15
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000010292 electrical insulation Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 53
- 239000000758 substrate Substances 0.000 description 19
- 239000012790 adhesive layer Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000002313 adhesive film Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 230000012447 hatching Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a solar cell module and a method for manufacturing the solar cell module.
- an anisotropic conductive adhesive having low conductivity in the in-plane direction of the solar cells and high conductivity in the film thickness direction is used.
- ACF anisotropic conductive adhesive
- anisotropic conductive adhesive is expensive, which increases the manufacturing cost of the solar cell module.
- One aspect of the present invention is a solar cell module, which connects a plurality of back junction solar cells provided with an electrode portion on only one of the main surfaces, and a plurality of back junction solar cells.
- a connecting member, and at least one of the electrode portion and the connecting member has irregularities, and the electrode portion and the connecting member are electrically connected via the irregularities.
- Another aspect of the present invention is a method for manufacturing a solar cell module, which is connected so as to straddle each collecting electrode of a plurality of back junction solar cells each provided with an electrode portion on only one of the main surfaces.
- 1st process which arrange
- the back junction solar cell module can be manufactured at low cost.
- the solar cell module 100 As shown in the plan view of FIG. 1 and the cross-sectional view of FIG. 2, the solar cell module 100 according to the embodiment of the present invention includes a solar cell 102, a connection member 104, and an adhesive layer 106.
- FIG. 1 is a view of the solar cell module 100 as seen from the back side.
- FIG. 2 is a cross-sectional view taken along line AA in FIG.
- the “light-receiving surface” is one of the main surfaces of the solar battery cell 102 and means a surface on which light from the outside is mainly incident. For example, 50% to 100% of the light incident on the solar battery cell 102 enters from the light receiving surface side.
- the “back surface” is one of the main surfaces of the solar battery cell 102 and means a surface opposite to the light receiving surface.
- the solar battery cell 102 is a back electrode junction type. That is, the solar cell 102 is provided with an electrode for collecting power generated by the solar battery on one main surface, and is not provided on the other main surface.
- the solar battery cell 102 is not particularly limited as long as it is a back electrode junction type.
- the semiconductor substrate 10 can be an n-type or p-type conductive crystalline semiconductor substrate.
- the semiconductor substrate 10 may be, for example, a single crystal silicon substrate, a polycrystalline silicon substrate, a gallium arsenide substrate (GaAs), an indium phosphorus substrate (InP), or the like.
- a texture structure may be formed on the light receiving surface of the semiconductor substrate 10.
- An i-type amorphous layer 12 i and an n-type amorphous layer 12 n are provided on the light receiving surface of the semiconductor substrate 10.
- the transparent protective layer 14 may be provided on the n-type amorphous layer 12n.
- the transparent protective layer 14 is made of, for example, a transparent insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, or a transparent conductive material such as tin oxide or indium tin oxide, and functions as an antireflection film and a light receiving surface of the solar cell module 100.
- a protective film On the back surface of the semiconductor substrate 10, an i-type amorphous layer 16i, an n-type amorphous layer 16n, an i-type amorphous layer 18i, and a p-type amorphous layer 18p are provided.
- the insulating layer 20 is provided so that the surface on the back surface side of the n-type amorphous layer 16n does not contact the surface on the light-receiving surface side of the i-type amorphous layer 18i.
- the insulating layer 20 may be transparent or opaque, and may be an insulating material such as silicon oxide, silicon nitride, silicon oxynitride, or the like.
- the electrode layer 22 is provided on the n-type amorphous layer 16n and the p-type amorphous layer 18p.
- the electrode layer 22 serves as a seed layer for forming the electrode part 24.
- the electrode layer 22 may have a laminated structure of a transparent conductive film 22a and a conductive layer 22b containing a metal.
- the electrode part 24 is provided on the electrode layer 22.
- the electrode part 24 may have a laminated structure of, for example, an electrode part 24a made of copper (Cu) and an electrode part 24b made of tin (Sn).
- the electrode part 24 becomes an n-side electrode part 24n provided on the n-type amorphous layer 16n and a p-side electrode part 24p provided on the p-type amorphous layer 18p.
- the n-side electrode portion 24n and the p-side electrode portion 24p constitute fingers and are combined in a comb shape.
- a bus bar 24bn for connecting a plurality of n-side electrode portions 24n and a bus bar 24bp for connecting a plurality of p-side electrode portions 24p are provided.
- the i-type amorphous layer 12i, the n-type amorphous layer 12n, the i-type amorphous layer 16i, the n-type amorphous layer 16n, the i-type amorphous layer 18i, and the p-type amorphous layer 18p are It can be formed by plasma enhanced chemical vapor deposition (PECVD) or the like.
- PECVD plasma enhanced chemical vapor deposition
- the transparent protective layer 14 and the insulating layer 20 can be formed using a sputtering method, a chemical vapor deposition method (CVD), or the like.
- the i-type amorphous layer 16i, the n-type amorphous layer 16n, the i-type amorphous layer 18i, the p-type amorphous layer 18p, and the insulating layer 20 are patterned by etching or the like as necessary.
- the electrode layer 22 can be formed by plasma enhanced chemical vapor deposition (PECVD), sputtering, or the like.
- the electrode part 24 can be formed by forming a metal layer by an electrolytic plating method.
- connection member 104 includes a substrate 30 and connection wirings 32 as shown in the plan view of FIG. 5 and the cross-sectional view of FIG. FIG. 5 is a plan view of the connecting member 104 as seen from the light receiving surface side.
- the substrate 30 is a member that becomes a base of the connection member 104.
- the substrate 30 may be a conductor, a semiconductor, or an insulator, and may be either transparent or opaque.
- the substrate 30 may be made of a material such as metal, resin, glass, or plastic.
- connection wiring 32 is a conductive layer that connects a plurality of solar cells 102.
- the connection wiring 32 may be made of, for example, a metal or a transparent conductor.
- the connection wiring 32 has the 1st area
- region 32a has the unevenness
- the height of the unevenness 32c is not particularly limited as long as it is within a range that can contact the bus bars 24bn and 24bp as described later, but is preferably 1 ⁇ m or more and 200 ⁇ m or less.
- the height of the irregularities 32c means the interval h from the concave / convex concave portions (valleys) to the convex portions (peaks).
- the height of the unevenness 32c is not uniform, the height of the unevenness 32c is the average value of the unevenness in the first region 32a.
- the shape of the irregularities 32c is not particularly limited, and may be a conical shape, a quadrangular pyramid shape, a polygonal pyramid shape, a groove shape, a combination thereof, or the like.
- connection member 104 may be configured by only the connection wiring 32 without providing the substrate 30.
- connection wiring 32 may be a metal foil such as copper.
- connection wiring 32 can be formed on the substrate 30 by sputtering, vapor deposition, screen printing, or the like.
- the unevenness 32c can be formed by adjusting the formation conditions of the connection wiring 32 in these manufacturing methods.
- the height of the unevenness 32c formed on the surface of the printed connection wiring 32 can be adjusted by changing the mesh or emulsion thickness of the screen screen used in the screen printing method. In this case, for example, a 250 mesh with a wire diameter of 25 ⁇ m and an emulsion thickness of 5 ⁇ m are preferable.
- the adhesive layer 106 bonds the plurality of solar cells 102 and the connection member 104 in order to connect the plurality of solar cells 102 with the connection member 104.
- a thermosetting adhesive containing an adhesive resin material such as an epoxy resin, an acrylic resin, or a urethane resin can be used.
- an adhesive is applied to a region of the electrode portion 24 of the solar battery cell 102 that is in contact with the connection wiring 32 of the connection member 104, and then the connection wiring 32 of the connection member 104 is aligned and crimped.
- the bus bars 24bn and 24bp and the first region 32a are connected to each other through the irregularities 32c. That is, the bus bars 24bn and 24bp and the first region 32a are bonded to each other by the adhesive layer 106 filled between the projections and depressions 32c provided on the connection wiring 32 of the connection member 104, and the projections of the projections and depressions 32c are formed on the bus bars 24bn and 24bn.
- the bus bars 24bn and 24bp and the first region 32a are electrically connected in contact with 24bp. Thereby, the two photovoltaic cells 102 are electrically connected by the connection member 104.
- the conductive adhesive paste (SCP) or the conductive adhesive film (SCF) in which the conductive particles are dispersed or the anisotropic conductive adhesive having low conductivity in the in-plane direction and high conductivity in the film thickness direction ( A plurality of solar cells 102 can be electrically connected without using ACF). Thereby, the manufacturing cost of the solar cell module 100 can be reduced.
- corrugation 32c should just be provided in the at least one part area
- the unevenness 32 c may be provided on the entire surface of the connection member 104. Accordingly, it is only necessary to form the irregularities 32c on the entire surface of the connection wiring 32 without distinguishing the regions, and the manufacturing can be simplified and the manufacturing cost can be reduced.
- irregularities 24c may be provided on the bus bars 24bn and 24bp.
- the height of the unevenness 24c is not particularly limited as long as it can be in contact with the connection wiring 32, but is preferably 1 ⁇ m or more and 200 ⁇ m or less.
- the electrode part 24 can be formed by a plating method as described above.
- the unevenness 24c can be formed on the surface of the electrode portion 24 by adjusting the plating conditions.
- the height of the unevenness 24c of the electrode portion 24 can be changed by adjusting the voltage applied when plating.
- any one of the conductive adhesive paste (SCP), the conductive adhesive film (SCF), and the anisotropic conductive adhesive (ACF) is not used.
- a plurality of solar cells 102 can be electrically connected. Thereby, the manufacturing cost of the solar cell module 100 can be reduced.
- the unevenness 32c and the unevenness 24c may be provided simultaneously.
- the unevenness 24c may be provided in at least a part of the bus bars 24bn and 24bp, but more preferably in the entire region. Thereby, the connection between the bus bars 24bn and 24bp and the connection wiring 32 becomes more reliable, and the contact resistance can be reduced.
- the unevenness 24c is not limited to the bus bars 24bn and 24bp, but may be provided on the entire surface of the n-side electrode part 24n and the p-side electrode part 24p. Accordingly, it is only necessary to form the unevenness 24c without distinguishing the regions, and the manufacturing can be simplified and the manufacturing cost can be reduced.
- the adhesive layer 106 any one of a conductive adhesive paste (SCP), a conductive adhesive film (SCF), and an anisotropic conductive adhesive (ACF) may be used.
- SCP conductive adhesive paste
- SCF conductive adhesive film
- ACF anisotropic conductive adhesive
- the adhesive layer 106 may be an insulating substance (eg, resin) that does not include a conductive material. In this case, not only the region of the unevenness 24c or the unevenness 32c, but the entire region other than the contact portion between the electrode portion 24 and the connection member 104 may be covered.
- the electrode portion 24 and the connection member 104 are in electrical contact at the projections of the projections and depressions 24c or 32c, and the electrode portion 24 and the connection member 104 are connected by the adhesive layer 106 at the depressions of the projections and depressions 24c or 32c. Glued.
- connection member 104 is connected to the bus bars 24bn and 24bp.
- connection member 104 may be connected to the n-side electrode part 24n and the p-side electrode part 24p.
- FIG. 10 is a plan view showing the connecting member 120 in the second embodiment.
- the connection member 120 includes a connection wiring 32 having an n-side wiring 32n connected to the n-side electrode portion 24n of the solar battery cell 102 and a p-side wiring 32p connected to the p-side electrode portion 24p.
- FIG. 11 is a plan view seen from the back side of the solar cell module 200 in which the solar cells 102 are connected using the connection member 120.
- 12 is a sectional view taken along line BB in FIG. 11, and
- FIG. 13 is a sectional view taken along line CC in FIG.
- the connection wiring 32 of the connection member 120 is shown to be seen through, and the n-side electrode part 24 n and the p-side electrode part 24 p of the solar battery cell 102 are hatched with the same hatching.
- the connection wiring 32 of the connection member 120 is indicated by hatching in the opposite direction.
- the n-side wiring 32n of the connection member 120 overlaps on one n-side electrode portion 24n of the solar cells 102 connected to each other, and the p-side wiring of the connection member 120 on the p-side electrode portion 24p of the other solar cell 102.
- the connecting member 120 is arranged so that 32p overlaps (in the figure, hatching is shown in a cross state).
- the n-side electrode portion 24n and the n-side wiring 32n, and the p-side electrode portion 24p and the p-side wiring 32p are connected by the adhesive layer 106.
- irregularities 32 c are provided on the surfaces of the n-side wiring 32 n and the p-side wiring 32 p of the connection wiring 32.
- the unevenness 32c may be provided in at least a partial region of the n-side wiring 32n and the p-side wiring 32p, but is more preferably provided in the entire region. Thereby, the connection between the connection wiring 32 and the n-side electrode part 24n and the p-side electrode part 24p becomes more reliable, and the contact resistance can be reduced.
- the unevenness 32c may be provided on the entire surface of the n-side wiring 32n and the p-side wiring 32p.
- connection between the connection wiring 32 and the n-side electrode part 24n and the p-side electrode part 24p becomes more reliable, and the contact resistance can be further reduced.
- the n-side electrode portion 24n and the p-side electrode portion 24p of the solar battery cell 102 are formed.
- the unevenness 24c may be provided.
- the conductive adhesive paste (SCP), the conductive adhesive film (SCF), and the anisotropic conductive adhesive (ACF) can be used as in the case where the unevenness 32c is provided on the n-side wiring 32n and the p-side wiring 32p.
- a plurality of solar battery cells 102 can be electrically connected without using either. Thereby, the manufacturing cost of the solar cell module 100 can be reduced.
- the unevenness 32c and the unevenness 24c may be provided simultaneously.
- the unevenness 24c may be provided in at least a partial region of the n-side electrode portion 24n and the p-side electrode portion 24p. It is more preferable. Thereby, the connection between the n-side electrode portion 24n and the p-side electrode portion 24p and the connection member 104 becomes more reliable, and the contact resistance can be further reduced. In addition, this makes it possible to form the unevenness 24c without distinguishing the regions, simplifying the manufacturing and reducing the manufacturing cost.
- any one of a conductive adhesive paste (SCP), a conductive adhesive film (SCF), and an anisotropic conductive adhesive (ACF) may be used.
- SCP conductive adhesive paste
- SCF conductive adhesive film
- ACF anisotropic conductive adhesive
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
La présente invention concerne un module de cellules solaires équipé : de plusieurs cellules solaires de type liaison à la surface arrière dans lequel une partie électrode n'est disposée que sur leur surface principale, et d'un élément de connexion destiné à connecter les plusieurs cellules solaires de type liaison à la surface arrière, la partie électrode et/ou l'élément de connexion présentant une surface irrégulière, et la partie électrode et l'élément de connexion étant connectés électriquement au moyen des irrégularités de surface.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014512231A JP5999527B2 (ja) | 2012-04-26 | 2012-04-26 | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
PCT/JP2012/061203 WO2013161030A1 (fr) | 2012-04-26 | 2012-04-26 | Module de cellules solaires et procédé de production de module de cellules solaires |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2012/061203 WO2013161030A1 (fr) | 2012-04-26 | 2012-04-26 | Module de cellules solaires et procédé de production de module de cellules solaires |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013161030A1 true WO2013161030A1 (fr) | 2013-10-31 |
Family
ID=49482399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/061203 WO2013161030A1 (fr) | 2012-04-26 | 2012-04-26 | Module de cellules solaires et procédé de production de module de cellules solaires |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5999527B2 (fr) |
WO (1) | WO2013161030A1 (fr) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2869350A1 (fr) * | 2013-10-29 | 2015-05-06 | LG Electronics Inc. | Module de cellule solaire |
US20160149065A1 (en) * | 2014-11-26 | 2016-05-26 | Thomas Pass | Solar module interconnect |
WO2017076996A1 (fr) * | 2015-11-05 | 2017-05-11 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Substrat pour encre conductrice |
JP2017118112A (ja) * | 2015-12-21 | 2017-06-29 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
JP2017529704A (ja) * | 2014-09-28 | 2017-10-05 | 蘇州中来光伏新材股▲ふん▼有限公司Jolywood (Suzhou) Sunwatt Co.,Ltd. | メインゲートフリーで高効率なバックコンタクト太陽電池モジュール、アセンブリ及び製造プロセス |
WO2018055863A1 (fr) * | 2016-09-20 | 2018-03-29 | 株式会社カネカ | Matériau de ligne de câblage pour cellule solaire et module de cellule solaire |
KR20230038896A (ko) * | 2021-09-13 | 2023-03-21 | 삼성에스디아이 주식회사 | 배터리 팩 |
JP7492888B2 (ja) | 2020-09-10 | 2024-05-30 | 株式会社カネカ | 太陽電池及び太陽電池製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011159747A (ja) * | 2010-01-29 | 2011-08-18 | Toppan Printing Co Ltd | 太陽電池用絶縁基板、太陽電池モジュール及び太陽電池用絶縁基板の製造方法 |
WO2011108634A1 (fr) * | 2010-03-05 | 2011-09-09 | 三洋電機株式会社 | Module de cellule solaire |
JP2012084560A (ja) * | 2010-10-06 | 2012-04-26 | Hitachi High-Technologies Corp | 結晶系太陽電池モジュール |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5595850B2 (ja) * | 2010-09-27 | 2014-09-24 | 三洋電機株式会社 | 太陽電池の製造方法 |
-
2012
- 2012-04-26 WO PCT/JP2012/061203 patent/WO2013161030A1/fr active Application Filing
- 2012-04-26 JP JP2014512231A patent/JP5999527B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011159747A (ja) * | 2010-01-29 | 2011-08-18 | Toppan Printing Co Ltd | 太陽電池用絶縁基板、太陽電池モジュール及び太陽電池用絶縁基板の製造方法 |
WO2011108634A1 (fr) * | 2010-03-05 | 2011-09-09 | 三洋電機株式会社 | Module de cellule solaire |
JP2012084560A (ja) * | 2010-10-06 | 2012-04-26 | Hitachi High-Technologies Corp | 結晶系太陽電池モジュール |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10636921B2 (en) | 2013-10-29 | 2020-04-28 | Lg Electronics Inc. | Solar cell module and method for manufacturing the same |
EP2869350A1 (fr) * | 2013-10-29 | 2015-05-06 | LG Electronics Inc. | Module de cellule solaire |
US9799782B2 (en) | 2013-10-29 | 2017-10-24 | Lg Electronics Inc. | Solar cell module and method for manufacturing the same |
JP2017529704A (ja) * | 2014-09-28 | 2017-10-05 | 蘇州中来光伏新材股▲ふん▼有限公司Jolywood (Suzhou) Sunwatt Co.,Ltd. | メインゲートフリーで高効率なバックコンタクト太陽電池モジュール、アセンブリ及び製造プロセス |
US11784270B2 (en) * | 2014-11-26 | 2023-10-10 | Maxeon Solar Pte. Ltd. | Solar module interconnect |
US20160149065A1 (en) * | 2014-11-26 | 2016-05-26 | Thomas Pass | Solar module interconnect |
US10636924B2 (en) * | 2014-11-26 | 2020-04-28 | Sunpower Corporation | Solar module interconnect |
WO2017076996A1 (fr) * | 2015-11-05 | 2017-05-11 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Substrat pour encre conductrice |
FR3043359A1 (fr) * | 2015-11-05 | 2017-05-12 | Commissariat Energie Atomique | Substrat pour encre conductrice |
JP2017118112A (ja) * | 2015-12-21 | 2017-06-29 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
JPWO2018055863A1 (ja) * | 2016-09-20 | 2019-07-04 | 株式会社カネカ | 太陽電池用配線材および太陽電池モジュール |
WO2018055863A1 (fr) * | 2016-09-20 | 2018-03-29 | 株式会社カネカ | Matériau de ligne de câblage pour cellule solaire et module de cellule solaire |
JP7492888B2 (ja) | 2020-09-10 | 2024-05-30 | 株式会社カネカ | 太陽電池及び太陽電池製造方法 |
KR20230038896A (ko) * | 2021-09-13 | 2023-03-21 | 삼성에스디아이 주식회사 | 배터리 팩 |
KR102558415B1 (ko) * | 2021-09-13 | 2023-07-24 | 삼성에스디아이 주식회사 | 배터리 팩 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2013161030A1 (ja) | 2015-12-21 |
JP5999527B2 (ja) | 2016-09-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5999527B2 (ja) | 太陽電池モジュール及び太陽電池モジュールの製造方法 | |
JP4429306B2 (ja) | 太陽電池セル及び太陽電池モジュール | |
US6803513B2 (en) | Series connected photovoltaic module and method for its manufacture | |
JP5025135B2 (ja) | 光起電力モジュール | |
JP5687506B2 (ja) | 太陽電池及び太陽電池モジュール | |
EP2053661B1 (fr) | Module de cellules solaires | |
JP5874011B2 (ja) | 太陽電池及び太陽電池モジュール | |
US20120031480A1 (en) | Current collection system for a photovoltaic cell | |
CN104205347A (zh) | 包含搭叠光伏瓦片的光伏模块及其制造工艺 | |
JP5014503B2 (ja) | 太陽電池セル及び太陽電池モジュール | |
JP2008135655A (ja) | 太陽電池モジュール、太陽電池モジュールの製造方法、及び太陽電池セル | |
KR20100019389A (ko) | 태양 전지 모듈 | |
EP3188257B1 (fr) | Module de cellule solaire | |
JP2010239167A (ja) | 太陽電池モジュール | |
WO2016158299A1 (fr) | Cellule solaire, procédé de fabrication associé, module de cellule solaire et feuille de câblage | |
JP2015207598A (ja) | 太陽電池モジュール、太陽電池およびこれに用いられる素子間接続体 | |
JP5174226B2 (ja) | 太陽電池モジュール | |
JP2015230985A (ja) | 太陽電池セルおよびその製造方法、太陽電池パネル | |
JP6037175B2 (ja) | 太陽電池モジュール | |
WO2012128284A1 (fr) | Pile solaire du type électrode de surface arrière, son procédé de fabrication et module de piles solaires | |
JP5014502B2 (ja) | 太陽電池セルの製造方法及び太陽電池モジュールの製造方法 | |
WO2020031574A1 (fr) | Module de cellules solaires | |
JP5906422B2 (ja) | 太陽電池及び太陽電池モジュール | |
US11515439B2 (en) | Photovoltaic devices and photovoltaic modules | |
JP2013229359A (ja) | 太陽電池パネル、太陽電池モジュールおよび太陽光発電システム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12875193 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2014512231 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 12875193 Country of ref document: EP Kind code of ref document: A1 |