WO2012128284A1 - Pile solaire du type électrode de surface arrière, son procédé de fabrication et module de piles solaires - Google Patents

Pile solaire du type électrode de surface arrière, son procédé de fabrication et module de piles solaires Download PDF

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Publication number
WO2012128284A1
WO2012128284A1 PCT/JP2012/057178 JP2012057178W WO2012128284A1 WO 2012128284 A1 WO2012128284 A1 WO 2012128284A1 JP 2012057178 W JP2012057178 W JP 2012057178W WO 2012128284 A1 WO2012128284 A1 WO 2012128284A1
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electrode
thin wire
solar cell
electrodes
bus bar
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PCT/JP2012/057178
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English (en)
Japanese (ja)
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三島　孝博
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三洋電機株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a back electrode type solar cell in which positive and negative electrodes are arranged on the back side opposite to the light receiving surface and a solar cell module using the back electrode type solar cell.
  • the solar cell constituting the solar cell module is, for example, a layer having a conductivity type opposite to the conductivity type of the silicon substrate on the surface (light receiving surface) on the side where sunlight enters among the surfaces of the single crystal or polycrystalline silicon substrate And a pn junction is formed, and electrodes are formed on the light receiving surface of the silicon substrate and the back surface on the opposite side. Further, it is generally used to increase the output by the back surface field effect by diffusing impurities of the same conductivity type as the silicon substrate at a high concentration on the back surface of the silicon substrate. However, in the solar cell having such a structure, there is a problem that the output of the solar cell is lowered because the electrode formed on the light receiving surface side blocks sunlight incident thereon.
  • a so-called back electrode type solar cell has been developed in which an electrode of a different conductivity type is formed only on the back surface of the silicon substrate without forming an electrode on the light receiving surface of the silicon substrate.
  • a back electrode type solar cell a p-type region and an n-type region are formed on the back surface of the silicon substrate without forming an electrode on the light-receiving surface side of the solar cell, and both positive and negative carriers are taken out in a comb shape.
  • a back-junction solar cell taken out from see, for example, Patent Document 1).
  • a conventional back junction solar cell will be described with reference to FIG.
  • a p-type region and an n-type region are alternately formed at predetermined intervals on the back surface of the n-type silicon substrate 101 opposite to the light-receiving surface.
  • a p-type thin wire electrode 111 is formed on the p-type region, and an n-type thin wire electrode 112 is formed on the n-type region.
  • the p-type fine wire electrode 111 and the n-type fine wire electrode 112 are formed so as to cover substantially the entire silicon substrate 101.
  • a p-type bus bar electrode 113 extending in a direction intersecting with the p-type thin wire electrode 111 is formed at an end portion on the back surface of the silicon substrate 101, and an n-type thin wire is formed at the other end portion on the back surface of the silicon substrate 101.
  • An n-type bus bar electrode 114 extending in a direction intersecting with the electrode 12 is formed.
  • the bus bar electrodes 113 and 114 and the thin wire electrodes 112 or 111 are formed with a predetermined width. For this reason, this area becomes an invalid part from the viewpoint of collecting carriers.
  • This invention makes it the 1st subject to improve the efficiency of the solar cell of a back electrode type solar cell. Moreover, this invention makes it 2nd subject to reduce the resistance of a back surface electrode and to improve the efficiency of a solar cell.
  • the solar cell of the present invention includes a semiconductor substrate and an electrode portion formed on the back surface of the semiconductor substrate, and the electrode portion includes a plurality of first thin wire electrodes formed on the back surface, and the first A plurality of second thin wire electrodes formed adjacent to the thin wire electrodes, and extending in a direction intersecting on the first thin wire electrode and the second thin wire electrode, the plurality of first thin wire electrodes being connected to each other.
  • a plurality of second bus electrodes extending in a direction intersecting the first bus bar electrode, the second thin line electrode, and the first thin line electrode. The thin wire electrodes are connected to each other, and the second bus bar electrodes are insulated from the first thin wire electrodes.
  • a semiconductor substrate is prepared, and on the back surface of the semiconductor substrate, a plurality of ground electrodes for the first thin wire electrodes and the ground electrodes for the first thin wire electrodes are adjacent.
  • the solar cell module of the present invention is a solar cell module including a plurality of electrically connected solar cells, and the solar cell includes a semiconductor substrate and electrodes formed on the back surface of the semiconductor substrate. A plurality of first thin wire electrodes formed on the back surface, a plurality of second thin wire electrodes formed adjacent to the first thin wire electrode, and on the first thin wire electrode.
  • a first bus bar electrode that extends in a direction intersecting on the second thin wire electrode, connects the plurality of first thin wire electrodes to each other, and is insulated from the second thin wire electrode;
  • a second bus bar electrode provided extending in a direction intersecting on the two thin wire electrodes and on the first thin wire electrode, interconnecting the plurality of second thin wire electrodes to each other and insulated from the first thin wire electrode And have.
  • the first fine wire electrode and the second fine wire electrode can be provided up to the bottom of the bus bar electrode. Therefore, the invalid area of the bus bar electrode portion can be reduced, the carrier collection efficiency is improved, and the solar cell Efficiency can be improved.
  • FIG. 1 is a plan view showing a solar cell according to a first embodiment.
  • FIG. 2 is a cross-sectional view taken along line A-A ′ of FIG. 1.
  • FIG. 2 is a sectional view taken along line B-B ′ of FIG. 1.
  • FIG. 2 is a sectional view taken along line C-C ′ of FIG. 1.
  • FIG. 3 is a schematic cross-sectional view showing a manufacturing process of the solar cell according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view showing a manufacturing process of the solar cell according to the first embodiment.
  • FIG. 3 is a plan view showing a manufacturing process of the solar cell according to the first embodiment.
  • FIG. 8 is a sectional view taken along line D-D ′ of FIG. 7.
  • FIG. 10 is a sectional view taken along line E-E ′ of FIG. 9.
  • FIG. 10 is a sectional view taken along line F-F ′ of FIG. 9.
  • FIG. 3 is a plan view showing a manufacturing process of the solar cell according to the first embodiment.
  • FIG. 13 is a sectional view taken along line G-G ′ of FIG. 12.
  • FIG. 13 is a sectional view taken along line H-H ′ of FIG. 12.
  • FIG. 16 is a sectional view taken along line I-I ′ of FIG. 15. It is a top view of the solar cell concerning 3rd Embodiment.
  • FIG. 10 is a sectional view taken along line E-E ′ of FIG. 9.
  • FIG. 10 is a sectional view taken along line F-F ′ of FIG. 9.
  • FIG. 3 is a plan view showing a manufacturing process of the solar cell according to the first embodiment.
  • FIG. 13 is a sectional view taken along line G-G ′ of FIG. 12.
  • FIG. 18 is a cross-sectional view taken along the line F-F ′ of FIG. 17. It is principal part sectional drawing of the solar cell concerning 4th Embodiment. It is a top view of the solar cell concerning 4th Embodiment.
  • FIG. 21 is a sectional view taken along line G-G ′ of FIG. 20. It is a schematic sectional drawing which shows the back junction type solar cell using the structure which improved the interface of heterojunction. It is a schematic sectional drawing which shows a back electrode type solar cell. It is a schematic sectional drawing which shows the solar cell module using the solar cell concerning each embodiment. It is a schematic plan view which shows the connection of the solar cell concerning each embodiment, and a wiring tab.
  • the “light receiving surface” means a surface of a semiconductor substrate in a solar cell or a solar cell module on the side on which sunlight is mainly incident
  • the “back surface” is a light receiving surface in the semiconductor substrate. Means the opposite surface.
  • FIG. 1 is a plan view showing the solar cell according to the first embodiment
  • FIG. 2 is a cross-sectional view taken along the line AA ′ in FIG. 1
  • FIG. 3 is a cross-sectional view taken along the line BB ′ in FIG.
  • FIG. 4 is a cross-sectional view taken along the line CC ′.
  • the solar cell 10 is formed by diffusing a plurality of n-type regions 12 and p-type regions 13 alternately spaced along the back surface of an n-type single crystal silicon (Si) substrate 11. Is formed.
  • An n-type thin wire electrode 16 f is formed on the n-type region 12 on the back side of the substrate 11, and a p-type thin wire electrode 17 f is formed on the p-type region 13.
  • a highly conductive material such as silver or aluminum is used so that a current generated in the solar cell can be taken out sufficiently.
  • a material in which copper or the like is grown on the base electrode by plating to form a low resistance electrode is used.
  • copper layers (plating layers) 16c and 17c are grown on the base electrodes 16a and 17a formed by sputtering or the like by plating.
  • a protective film (not shown) such as an insulating film is formed on the substrate 11, and the protective film at predetermined positions on the n-type region 12 and the p-type region 13 is removed.
  • An n-type thin wire electrode 16f connected to the region 12 and a p-type thin wire electrode 17f connected to the p-type region 13 are provided.
  • the n-type bus bar electrode 16i extending in the direction intersecting on the n-type thin wire electrode 16f on the one end side of the substrate 11 and connected to the n-type thin wire electrode 16f is formed in multiple layers.
  • An insulating layer 20 is provided between the n-type bus bar electrode 16 located on the p-type thin wire electrode 17f, and the p-type thin wire electrode 17f and the n-type bus bar electrode 16i are not short-circuited. .
  • an insulating layer 20 having an opening on the base electrode 16a for the n-type thin wire electrode is provided on the substrate 11, a base electrode 16b is provided thereon, and a plating layer 16c is formed on the base electrode 16b. It is constituted by.
  • the n-type electrode 16 is constituted by the n-type thin wire electrode 16f and the bus bar electrode 16i.
  • a p-type bus bar electrode 17i extending in a direction intersecting on the p-type thin wire electrode 17f on the other end side of the substrate 11 and connected to the p-type thin wire electrode 17f is formed in multiple layers.
  • An insulating layer 20 is provided between the p-type bus bar electrode 17i located on the n-type thin wire electrode 16f, and the n-type thin wire electrode 16f and the p-type bus bar electrode 17 are not short-circuited. .
  • an insulating layer 20 having an opening on the base electrode 17a for the p-type thin wire electrode is provided on the substrate 11, a base electrode 17b is provided thereon, and a plating layer 17c is formed on the base electrode 17b. It is constituted by.
  • the p-type electrode 17 is composed of the p-type thin wire electrode 17f and the bus bar electrode 17i.
  • a surface passivation layer 18a made of an n-type doping layer and an antireflection film 18b such as titanium oxide (TiO 2 ) are formed.
  • the thin wire electrodes 16f and 17f described above are electrodes that mainly collect current generated in the solar cell 10.
  • the bus bar electrodes 16i and 17i are electrodes used to collect currents collected by the thin wire electrodes 16f and 17f, respectively, and are mainly used for connection with other solar cells.
  • the n-type thin wire electrode 16f and the p-type thin wire electrode 17f can be provided up to the bottom of the bus bar electrodes 16i and 17i. Can be reduced, carrier collection efficiency can be improved, and solar cell efficiency can be improved.
  • FIGS. 5 and 6 are schematic cross-sectional views showing the manufacturing process of the solar cell according to the first embodiment
  • FIG. 7 is a plan view showing the manufacturing process of the solar cell
  • FIG. 8 is a DD of FIG. 9 is a plan view showing a manufacturing process of the solar cell
  • FIG. 10 is a cross-sectional view taken along the line EE ′ of FIG. 9
  • FIG. 13 is a cross-sectional view taken along the line GG ′ of FIG. 12
  • FIG. 14 is a cross-sectional view taken along the line HH ′ of FIG.
  • the single crystal silicon substrate 11 is obtained by slicing an ingot of silicon crystal. When the substrate 11 is sliced, a damaged layer is formed in the vicinity of the surface thereof. Therefore, it is preferable to remove the damaged layer by etching using an acidic or alkaline solution.
  • the conductivity type of the substrate 11 may be n-type or p-type. In this embodiment, an n-type single crystal silicon substrate is used. Further, the size and thickness of the substrate 11 can be appropriately changed. In this embodiment, a substrate having a thickness of 200 ⁇ m, a size of 100 mm square, and a resistivity of 1 ⁇ cm was used.
  • a pyramidal microstructure called a texture is formed on the light receiving surface of the substrate 11 in order to suppress loss due to reflection of incident sunlight, the surface orientation of the light receiving surface of the substrate 11 is (100). Preferably there is.
  • 13a is attached in a predetermined pattern.
  • means for attaching the paste materials 12a and 13a in a predetermined pattern include screen printing and inkjet printing.
  • the paste materials 12a and 13a are formed on the back surface of the substrate 11 by screen printing.
  • the n-type paste material 12 a and the p-type paste material 13 a are formed along the back surface of the substrate 11 at intervals.
  • the substrate 11 is heated and diffused for 30 minutes at a temperature of about 800 ° C. to 900 ° C., for example, 850 ° C. in this embodiment.
  • the n-type impurity (phosphorus) contained in the n-type paste material 12a and the p-type impurity (boron) contained in the p-type paste material 13a are diffused into the substrate 11, and as shown in FIG.
  • a plurality of n-type regions 12 and p-type regions 13 are alternately formed along the back surface.
  • both the n-type region 12 and the p-type region 13 have a size of 0.8 mm ⁇ 98 mm, a gap of 0.4 mm, and a junction depth of 0.3 ⁇ m.
  • the number of p-type regions 13 is 41 and the number of n-type regions 12 is 40.
  • a number, thickness, etc. differ from an actual thing.
  • the oxide film formed on the surface of the substrate 11 is removed using dilute hydrofluoric acid (2%), and a surface passivation layer 18a made of an n-type doping layer is formed on the light receiving surface.
  • An antireflection film 18b is formed on the passivation layer 18a by thermal CVD (Chemical Vapor Deposition) to a thickness of about 80 nm.
  • the base electrode 16 a for the n-type thin wire electrode and the base electrode 17 a for the p-type thin wire electrode are provided on the n-type region 12 and the p-type region 13 on the back surface side of the substrate 11. Formed.
  • Each of the underlying electrodes 16a and 17a is 0.8 mm ⁇ 98 mm in size, 1 ⁇ m to 4 ⁇ m in thickness, and in this embodiment, 2 ⁇ m of copper is formed by sputtering using a metal mask.
  • rectangular insulating materials 20 each having a width of 10 mm and a length of 100 mm are provided on both ends of the substrate 11 so as to cover the base electrodes 16a and 17a.
  • This insulating material 20 is formed so as to cover all of one electrode end. That is, on the side where the n-type bus bar electrode is provided, an insulating layer 20 is provided which is opened on the base electrode 16a for the n-type thin wire electrode and patterned so as to cover the base electrode 17a for the p-type thin wire electrode. .
  • an insulating layer 20 which is open on the base electrode 17a for the p-type thin wire electrode and patterned so as to cover the base electrode 16a for the n-type thin wire electrode. It is done.
  • the size of each open area is 0.8 mm wide and 2 mm long.
  • the insulating layer 20 was formed by applying a polyimide resin with a film thickness of 1 ⁇ m to 10 ⁇ m, in this embodiment 5 ⁇ m, with a dispenser and heating temperature of 200 ° C. and heating time of 5 minutes.
  • a bus bar base electrode 16b connected to the base electrode 16a and a bus bar base electrode 17b connected to the base electrode 17a are formed on the insulating layer 20.
  • the base electrodes 16b and 17b have a width of 8 mm ⁇ a length of 98 mm, and a branch portion connected to each base electrode has a width of 0.8 mm.
  • the base electrodes 16b and 17b had a thickness of 1 ⁇ m to 4 ⁇ m, and in this embodiment, 2 ⁇ m of copper was formed by sputtering using a metal mask.
  • the base electrodes 16b and 17b are overlapped with each other by about 2 mm in length to ensure electrical connection.
  • the base electrodes 16a, 16b, 17a, and 17b are subjected to electric field plating while being individually fed to form plated layers 16c and 17c.
  • FIGS. Battery 10 is obtained.
  • the anode was phosphor-containing copper
  • the cathode was the base electrode 16a, 16b or 17a, 17b
  • the plating thickness was 10 ⁇ m to 30 ⁇ m, and in this embodiment, 10 ⁇ m.
  • the plating current was 2A
  • the plating solution was copper sulfate
  • the distance between the electrodes was 5 cm
  • the temperature was 40 ° C.
  • the thickness of the electrode can be increased by plating, and the resistance loss can be reduced.
  • Table 1 and FIG. 29 show the simulation results of the relationship between the electrode thickness and the resistance loss. Measurement is based on the assumption that the cell area is 100 cm 2 , the copper resistivity is 1.72 ⁇ cm, the resistance loss occurs in the length direction of the copper electrode, the electrode width is 0.8 mm, the number of electrodes is 41, and the pattern shape is the same as in FIG. did. Since FIG. 1 is simplified as described above, the number of electrodes is different from the number shown in FIG.
  • the base electrodes 16a and 17a for thin wire electrodes and the base electrodes 16b and 17b for bus bar electrodes can be easily and reliably connected. Therefore, when the plating power is supplied, power can be reliably supplied to all the underlying electrodes, and a plating layer having an optimum thickness can be formed on all the underlying electrodes. As a result, the thickness of all the electrodes can be formed to 10 ⁇ m or more, and the power loss at the electrodes can be reduced as much as possible.
  • a vapor-deposited metal film is used as the base electrode.
  • a transparent conductive film made of a mixture of indium oxide and tin oxide, a zinc oxide-based transparent conductive film, or the like is used as the base electrode. It can also be used as an electrode.
  • FIG. 15 is a plan view of a solar cell according to the second embodiment
  • FIG. 16 is a cross-sectional view taken along the line I-I ′ of FIG.
  • the base electrode for the bus bar electrode connected to the base electrode for the fine wire electrode is formed by the sputtering method.
  • the bus bar base electrodes 16h and 17h are connected to the base electrodes 16a and 17a for the thin wire electrodes using the conductive adhesive 21.
  • the bus bar base electrodes 16h and 17h in this embodiment are made of a copper foil plate having a thickness of 5 ⁇ m to 50 ⁇ m. Specifically, in the second embodiment, a copper foil plate having a width of 8 mm, a length of 98 mm, and a thickness of 10 ⁇ m was used. The process until the insulating layer 20 is formed is the same as that in the first embodiment.
  • the conductive resin adhesive 21 includes a resin adhesive component and conductive particles dispersed therein.
  • the conductive adhesive 21 is applied onto the insulating layer 20 with a dispenser, and base electrodes 16h and 17h made of a copper foil plate are placed thereon.
  • the conductive adhesive is cured while pressing the underlying electrodes 16h and 17h, and the underlying electrodes 16h and 17h are connected to the underlying electrodes 16a and 17a, respectively, thereby forming the underlying electrodes.
  • the resin adhesive component of the conductive resin adhesive 21 is composed of a composition containing a thermosetting resin, and for example, epoxy resin, phenoxy resin, acrylic resin, polyimide resin, polyamide resin, and polycarbonate resin can be used. These thermosetting resins are used singly or in combination of two or more, and one or more thermosetting resins selected from the group consisting of epoxy resins, phenoxy resins and acrylic resins are preferable. In addition, it is possible to use an ultraviolet curable resin as a resin adhesive component.
  • Examples of the conductive particles of the conductive resin adhesive 21 include metal particles such as gold particles, silver particles, copper particles, and nickel particles, or conductive or insulating properties such as gold plated particles, copper plated particles, and nickel plated particles. Conductive particles obtained by coating the surfaces of the core particles with a conductive layer such as a metal layer are used.
  • a liquid or a film can be used as the conductive adhesive 21 .
  • the underlying electrodes 16h and 17h made of a copper foil plate are placed on the conductive adhesive 21 and heated at 200 ° C. for 5 minutes under a pressure of about 1 to 2 MPa, for example, to cure the conductive adhesive 21.
  • the base electrodes 16h and 17h are bonded to the base electrodes 16a and 17a, respectively. This heating is preferably performed in a nitrogen atmosphere in order to prevent oxidation of the copper foil.
  • the electrodes 16 and 17 are formed by plating the same as in the first embodiment described above, so that the solar cell of the present invention is formed. Is obtained.
  • the p side and the n side can be plated simultaneously.
  • FIG. 17 is a plan view of a solar cell according to the third embodiment
  • FIG. 18 is a cross-sectional view taken along the line F-F ′ of FIG.
  • the base electrode for the bus bar electrode connected to the base electrode for the fine wire electrode is formed by the sputtering method.
  • the bus bar base electrodes 16d and 17d are connected to the base electrodes 16a and 17a for the thin wire electrodes by using a thermosetting conductive paste. The process until the insulating layer 20 is formed is the same as that in the first embodiment.
  • thermosetting Ag paste is used as the conductive paste, and the thickness is 2 ⁇ m to 20 ⁇ m.
  • the width is 8 mm, the length is 98 mm, and the thickness is 10 ⁇ m.
  • Formed by screen printing. The curing condition is 180 ° C. for 30 minutes.
  • An Ag paste was formed on the insulating layer 20 by screen printing, heated at 200 ° C. for 5 minutes to cure the Ag paste, and formed with an Ag paste connected to the underlying electrodes 16a and 17a for the thin wire electrodes. Bus bar base electrodes 16d and 17d are formed.
  • FIGS. 19 is a cross-sectional view of the main part of the solar cell according to the fourth embodiment
  • FIG. 20 is a plan view of the solar cell according to the fourth embodiment
  • FIG. 21 is a cross-sectional view taken along the line GG ′ of FIG. It is.
  • the base electrode for the bus bar electrode connected to the base electrode for the fine wire electrode is formed by the sputtering method.
  • the copper foil 19 is connected by welding to the base electrodes 16a and 17a for the thin wire electrodes. The process until the insulating layer 20 is formed is the same as that in the first embodiment.
  • each electrode is plated to form a plating layer 19a around the copper foil 19.
  • the electrodes including the bus bar electrodes 16e and 17e are formed.
  • a metal wire may be used for connection by welding, and then plating may be performed.
  • the back surface junction is formed by the diffusion layer.
  • the solar cell shown in FIG. 22 is a back junction solar cell using a so-called Hetero-junction with Intrinsic thin-layer structure in which the heterojunction interface is improved.
  • a passivation film 31 is formed on the light receiving surface of the n-type silicon substrate 11.
  • an intrinsic amorphous silicon layer 30 is formed on substantially the entire surface, and an n-type amorphous silicon layer 12i and a p-type amorphous silicon layer 13i are alternately formed in a comb shape thereon.
  • the n-type and p-type amorphous silicon layers 12i and 13i are provided with thin wire electrodes 16 and 17 for taking out, respectively, and the charges generated in the solar cell are taken out from the p side and the electrons are taken out from the n side.
  • an n-type bus bar electrode extending in a direction intersecting on the thin wire electrode 16 on one end side of the substrate 11 and connected to the thin wire electrode 16 is formed in multiple layers. Yes. An insulating layer is provided between the n-type bus bar electrode and the n-type bus bar electrode positioned on the fine wire electrode 17 so that the p-type fine wire electrode 17 and the n-type bus bar electrode are not short-circuited.
  • a p-type bus bar electrode that extends in the direction intersecting on the thin wire electrode 17 on the other end side of the substrate 11 and is connected to the thin wire electrode 17 is formed in multiple layers.
  • An insulating layer is provided between the n-type thin wire electrode 16 and the p-type bus bar electrode, and the n-type fine wire electrode 16 and the p-type bus bar electrode are not short-circuited.
  • the configuration other than the element structure of the solar cell is the same as that of the above-described embodiment.
  • the above-described solar cell is provided with a semiconductor junction on the back surface side, but the example shown in FIG. 23 is an electrode provided on the back surface side, and the semiconductor junction is provided on the light receiving surface side. That is, the p or n type impurity region 13 is provided on the surface side of the n or p type semiconductor substrate 11.
  • An electrode 16 having the same polarity as that of the substrate 11 is provided on the back side of the substrate 11, and an electrode of the impurity region 13 on the front side is provided on the back side of the substrate 11 through a through hole 31.
  • the electrodes 16 and 17 are the same as the electrodes described above.
  • the base electrode for the fine wire electrode and the base electrode for the bus bar are wired in multiple layers through the insulating layer, as in the above-described embodiment. What is necessary is just to comprise.
  • FIG. 24 is a schematic cross-sectional view showing a solar cell module using the solar cell of each embodiment
  • FIGS. 25 and 26 are schematic plan views showing the connection between the solar cell and a wiring tab.
  • the solar cell module electrically connects the p-side electrode 17 of one solar cell 10 and the n-side electrode 16 of the other solar cell 10 using a wiring tab 50 to form a string shape. Furthermore, as shown in FIG. 26, the solar cell module has a crossover wiring 52 that connects the strings. From the solar cell 10 located at the end, a wiring 52 is connected to the electrode 17 via a wiring tab 51, and this wiring 52 is connected to a terminal of a terminal box (not shown). An insulating sheet 55 is interposed between the wiring 52 and the solar cell 10 to prevent a short circuit between the wiring 52 and the electrode of the solar cell 10. As shown in FIG. 26, the bus bar electrodes of adjacent strings are arranged so as to have different polarities, and are considered so that they can be easily connected when connecting both strings using the crossover wiring 52.
  • the wiring 52 is a copper foil having a thickness of about 100 ⁇ m to 300 ⁇ m and a width of about 6 mm, and its entire surface is solder-coated, cut into a predetermined length, and soldered to a wiring tab or the like.
  • the surface of the output wiring is covered with an insulating film.
  • the solar cell module includes a plurality of solar cell modules connected from the light receiving surface side by a surface protection member 41 such as glass, a light-transmitting sealing material 43 such as EVA, a wiring tab 50, a crossover wiring 52, and the like.
  • the solar cell 10, the rear surface side light-transmitting sealing material 43, and the back surface protection member 42 composed of a back sheet and the like are stacked in this order, laminated and integrated. By this laminating process, the solar cell 10 and the wiring tab 30 are integrated in a connected state.
  • the wiring tab 51 connected to the bus bar electrode 17 (16) is connected to the crossover wiring 52 and is taken out as a lead line.
  • the wiring tab 51 and the transition wiring 52 cross over the n-type electrode 16 and the p-type electrode 17.
  • an insulating sheet 55 made of a filler or an insulating material is sandwiched between the wirings 51 and 52 and the solar cell 10 in order to prevent a short circuit due to the wiring.
  • the n-type electrode 16 and the p-type electrode 17 are connected by the wiring tab 50.
  • the position where the bus bar electrode is provided is not limited to the end.
  • one bus bar electrode 16x can be provided at the end, and the other bus bar electrode 17x can be provided at a predetermined distance from the end.
  • FIG. 28 by separating the bus bar electrode 17 from the end portion by a predetermined distance, a layout that reduces the overlapping of the crossover wirings 52 is possible, and there is an advantage that the overlapping of wirings of the solar cell module can be reduced. can get.
  • the electrode is formed by electrolytic plating, but may be formed by electroless plating.
  • the base electrode may be formed of a metal such as tin or nickel that has a higher ionization tendency than copper.
  • the electroless plating solution for example, a solution containing at least one of cupric sulfate, ethylenediaminetetraacetic acid, formaldehyde, and alkali hydroxide as a main component can be used.

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Abstract

L'objet de la présente invention consiste à augmenter l'efficacité d'une pile solaire du type électrode de surface arrière. Cette pile solaire possède, sur un substrat (11), une surface de réception de la lumière permettant de recevoir la lumière du soleil et une surface arrière située sur le côté opposé de la surface de réception de la lumière, et comprend des sections électrode (16, 17) formées sur la surface arrière du substrat (11). La section électrode comporte une pluralité d'électrodes fines du type n (16f) formées sur la surface arrière ; une pluralité d'électrodes fines du type p (17f) formées de façon adjacente aux électrodes fines de type n (16f) ; une électrode à barre omnibus de type n (16i) qui s'étend dans une direction qui coupe les électrodes fines de type n (16f) et les électrodes fines de type p (17f) et qui, tout en connectant mutuellement la pluralité d'électrodes fines de type n (16f), est isolée des électrodes fines de type p (17f) ; et une électrode à barre omnibus de type p (17i) qui est formée dans une direction qui coupe les électrodes fines de type p (17f) et les électrodes fines de type n (16f) et qui, tout en connectant mutuellement la pluralité d'électrodes fines de type p (17f), est isolée des électrodes fines de type n (16f).
PCT/JP2012/057178 2011-03-24 2012-03-21 Pile solaire du type électrode de surface arrière, son procédé de fabrication et module de piles solaires WO2012128284A1 (fr)

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JP2011-065459 2011-03-24

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JP2016174191A (ja) * 2013-10-29 2016-09-29 エルジー エレクトロニクス インコーポレイティド 太陽電池モジュール及びその製造方法
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WO2018066273A1 (fr) * 2016-10-03 2018-04-12 豊田鉄工株式会社 Procédé de fabrication d'un article moulé en résine de barres omnibus

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