WO2013156568A3 - Schaltungsanordnung zur thermisch leitfähigen chipmontage und herstellungsverfahren - Google Patents
Schaltungsanordnung zur thermisch leitfähigen chipmontage und herstellungsverfahren Download PDFInfo
- Publication number
- WO2013156568A3 WO2013156568A3 PCT/EP2013/058094 EP2013058094W WO2013156568A3 WO 2013156568 A3 WO2013156568 A3 WO 2013156568A3 EP 2013058094 W EP2013058094 W EP 2013058094W WO 2013156568 A3 WO2013156568 A3 WO 2013156568A3
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- WIPO (PCT)
- Prior art keywords
- circuit arrangement
- production method
- thermally conductive
- chip assembly
- conductive chip
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Abstract
Eine erfindungsgemäße Schaltungsanordnung weist ein Substrat (10), ein Verbindungselement (18) und einen Chip (16) auf. Das Substrat (10) weist auf seiner Oberfläche eine zumindest teilweise Metallisierung (11) auf. Das Verbindungselement (18) ist auf der Metallisierung (11) aufgebracht. Der Chip (16) ist auf dem Verbindungselement (18) aufgebracht. Das Verbindungselement (18) weist eine elektrisch nichtleitende Glasschicht (14), welche direkt auf der Metallisierung (11) aufgebracht ist, und eine Kleberschicht (15) zwischen dem Chip (16) und der Glasschicht (14) auf.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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DE102012206362.5 | 2012-04-18 | ||
DE102012206362.5A DE102012206362B4 (de) | 2012-04-18 | 2012-04-18 | Schaltungsanordnung zur thermisch leitfähigen Chipmontage und Herstellungsverfahren |
US13/466,317 US9224666B2 (en) | 2012-04-18 | 2012-05-08 | Circuit arrangement for a thermally conductive chip assembly and a manufacturing method |
US13/466,317 | 2012-05-08 |
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WO2013156568A2 WO2013156568A2 (de) | 2013-10-24 |
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DE (1) | DE102012206362B4 (de) |
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US9781842B2 (en) * | 2013-08-05 | 2017-10-03 | California Institute Of Technology | Long-term packaging for the protection of implant electronics |
DE102015215011A1 (de) * | 2015-08-06 | 2017-02-09 | Robert Bosch Gmbh | Thermisches und/oder elektrisches Kontaktelement, Kontaktanordnung und Verfahren zur Reduzierung einer Formtoleranz eines Kontaktelementes und/oder einer Kontaktanordnung |
US10130302B2 (en) * | 2016-06-29 | 2018-11-20 | International Business Machines Corporation | Via and trench filling using injection molded soldering |
EP3457434B1 (de) * | 2017-09-13 | 2020-11-18 | Infineon Technologies AG | Verfahren zur herstellung eines halbleitersubstrats für eine leistungshalbleitermodulanordnung |
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DE2727364A1 (de) * | 1977-06-16 | 1979-01-04 | Siemens Ag | Verfahren zur herstellung von keramiksubstraten |
JPS5762539A (en) * | 1980-10-01 | 1982-04-15 | Hitachi Ltd | Mounting method for semiconductor element |
DE3227815A1 (de) | 1981-08-03 | 1983-02-24 | Johnson Matthey Inc., Malvern, Pa. | Silber enthaltende metallisierungspaste sowie deren verwendung zum verkleben von siliciumhalbleitern auf substraten |
JP3173410B2 (ja) * | 1997-03-14 | 2001-06-04 | 松下電器産業株式会社 | パッケージ基板およびその製造方法 |
DE10120928C1 (de) * | 2001-04-30 | 2002-10-31 | Infineon Technologies Ag | Verfahren zum Erstellen einer Kontaktverbindung zwischen einem Halbleiterchip und einem Substrat, insbesondere zwischen einem Speichermodulchip und einem Speichermodulboard |
DE10206818A1 (de) * | 2002-02-18 | 2003-08-28 | Infineon Technologies Ag | Elektronisches Bauteil mit Klebstoffschicht und Verfahren zur Herstellung derselben |
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US20130277846A1 (en) | 2013-10-24 |
DE102012206362A1 (de) | 2013-10-24 |
WO2013156568A2 (de) | 2013-10-24 |
DE102012206362B4 (de) | 2021-02-25 |
US9224666B2 (en) | 2015-12-29 |
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