WO2013152658A1 - Cellule solaire triple jonction et son procédé de fabrication - Google Patents

Cellule solaire triple jonction et son procédé de fabrication Download PDF

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WO2013152658A1
WO2013152658A1 PCT/CN2013/072858 CN2013072858W WO2013152658A1 WO 2013152658 A1 WO2013152658 A1 WO 2013152658A1 CN 2013072858 W CN2013072858 W CN 2013072858W WO 2013152658 A1 WO2013152658 A1 WO 2013152658A1
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gaas
layer
band gap
subcell
lattice
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PCT/CN2013/072858
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English (en)
Chinese (zh)
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毕京锋
林桂江
刘建庆
熊伟平
宋明辉
王良均
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厦门市三安光电科技有限公司
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Publication of WO2013152658A1 publication Critical patent/WO2013152658A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Definitions

  • the invention relates to a three-junction solar cell and a manufacturing method thereof, and belongs to the technical field of semiconductor materials.
  • Solar cells manufactured by photoelectric conversion technology can directly convert solar energy into electrical energy, which greatly reduces the dependence of people's production and life on coal, oil and natural gas, and becomes one of the most effective ways to use green energy.
  • silicon-based solar cells dominate in large-scale applications and industrial production, single-junction solar cells can only absorb sunlight in a specific spectral range, and their conversion efficiency is not high. If different band gaps are used Eg materials are prepared as multi-junction solar cells and these materials are pressed Eg The size is superposed from top to bottom to form a multi-junction solar cell. By allowing them to selectively absorb and convert different sub-domains of the solar spectrum, the photoelectric conversion efficiency of the solar cell can be greatly improved.
  • V-group compound semiconductor-based multi-junction solar cell has long been a mainstream technology for space photovoltaic power sources because of its advantages of high temperature resistance, strong radiation resistance, and good temperature characteristics.
  • the substrate materials of the V-group compound semiconductor solar cells are mainly monolithic wafers and gallium arsenide single wafers, which are expensive and rare materials, which greatly affect the cost of the concentrating solar cell and restrict the raw materials. Its large-scale application. Therefore, in order to make multi-junction solar cells compete with the first and second generation solar cells, and even with traditional energy sources, it is necessary to develop new multi-junction solar cells with low cost and high efficiency. Adopted in this case The replacement of a Ge substrate by a Si substrate enables the realization of a low-cost, high-efficiency solar cell. Due to the abundant raw materials of Si and mature production technology, Si is used.
  • the substrate not only greatly reduces the raw material cost of the multi-junction solar cell (the price of a 6-inch Ge substrate is about 10 times that of a Si substrate of the same size); at the same time, the multi-junction solar cell and the relatively mature Si processing technology is combined; in addition, the density of Si is small, which can reduce the weight of the entire battery, and will be beneficial to aerospace applications of multi-junction solar cells.
  • the present invention is directed to an efficient triple junction solar cell using a Si substrate and a method of fabricating the same.
  • the substrate not only greatly reduces the raw material cost of multi-junction solar cells, but also combines multi-junction solar cells with relatively mature Si processing technology for III- The application and promotion of V-group compound semiconductor-based multi-junction solar cells is of great significance.
  • a method for fabricating a three-junction solar cell the specific steps of which include:
  • a triple junction solar cell includes: a first subcell composed of a Si-based battery having a first band gap; and a GaAs x P 1-x graded buffer layer formed on Above the first sub-cell, which is a layered multilayer structure, x varies from 0.05 to 0.95, has a second band gap greater than the first band gap; and a second subcell is formed on the GaAs x P 1 Above the -x gradient buffer layer, which is composed of GaAsP, has a third band gap larger than the first band gap, and the lattice constant is matched with the GaAs x P 1-x graded buffer layer termination layer; the third subcell is formed in Above the second sub-cell, which is composed of InGaP, has a fourth band gap greater than the third band gap, and the lattice constant is matched with the second sub-cell.
  • the above GaAs x P 1-x graded buffer layer has a lattice constant a GaAsP as a function of As composition in accordance with Vergard's theorem.
  • the band gap of the first subcell is preferably 1.11 eV.
  • the lattice constant of the GaAs x P 1-x graded buffer layer ranges from 5.43 to 5.51 ⁇ , and the band gap varies from 1.54 to 2.62 eV, including a GaAs x P 1-x lattice gradation layer, a GaAs stress balance layer, and GaAs x P 1-x target lattice layer.
  • the As component in the GaAs x P 1-x lattice gradation layer varies from 0.05 to 0.95 and gradually increases; the GaAs stress balance layer is located above the GaAs x P 1-x lattice gradation layer; GaAs The x P 1-x target lattice layer is a termination layer of a GaAs x P 1-x graded buffer layer over the GaAs stress balance layer and having a lower lattice constant than the GaAs stress balance layer.
  • the second sub-cell is composed of GaAsP, and the band gap is adjusted to 1.40 ⁇ 1.60 eV by the As composition change, and the lattice constant is matched with the GaAs x P 1-x graded buffer stop layer, but smaller than the GaAs crystal. Grid constant.
  • the third sub-cell is composed of In y Ga 1-y P, and the band gap is adjusted to 1.90-2.20 eV by the change of the In composition, and the lattice constant thereof is matched with the second sub-cell.
  • the innovations of the present invention are: 1) The replacement of expensive Ge or GaAs substrates with Si substrates greatly reduces battery cost. 2) Using GaAs x P 1-x material as the graded buffer layer can overcome the lattice mismatch between the bottom cell Si (5.4309 ⁇ ) and the middle cell GaAsP (5.43 ⁇ 5.51 ⁇ : according to different As and P ratios). Effectively reduces the dislocation density.
  • the GaAs x P 1-x graded buffer layer has a multilayer structure, and the range of x varies from 0.05 to 0.95, the lattice constant ranges from 5.43 to 5.51 ⁇ , and the band gap varies from 1.54 to 2.62 eV.
  • the lattice constant is gradually increased, and the sub-terminating layer is a GaAs stress-balancing layer, and the stress is slowly released, overcoming the lattice mismatch between the first two sub-cells.
  • the two-junction cell can be realized in the case of lattice matching.
  • the diversity of the bandgap combination (the black solid line range in Figure 1 is the bandgap range of the second and third sub-cells) greatly expands the choice of multi-junction solar cells, and can be selected according to actual needs (ground or space). Gap combination to obtain a current matching high efficiency solar cell.
  • Figure 1 is a plot of the lattice constant and band gap of a semiconductor material.
  • FIG. 2 is a schematic structural view of a triple junction solar cell in accordance with a preferred embodiment of the present invention.
  • Figure 3 is a three-junction solar cell shown in Figure 2.
  • GaAs x P 1-x Schematic diagram of the gradient buffer layer.
  • 100 first sub-battery; 110: p-type Si substrate; 120: first sub-cell window layer; 200: second sub-cell (GaAsP sub-cell); 210: second sub-battery back-field layer; 220: second Subcell base; 230: second subcell emitting region; 240: second subcell window layer; 300: third subcell (InGaP subcell); 310: third subcell backfield layer; 320: third sub Battery base; 330: third sub-cell emitting region; 340: third sub-cell window layer; 401: first and second sub-cell tunneling junctions; 402: second and third sub-cell tunneling junctions; 500: GaAs x P 1-x graded buffer layer; 510: GaAs x P 1-x lattice graded layer; 520: GaAs stress balance layer; 530: GaAs x P 1-x target lattice layer; 600: highly doped cap layer.
  • a method for preparing a three-junction solar cell comprising the following steps:
  • a p-type Si substrate 110 having a doping concentration of 2 ⁇ 10 17 cm -3 to 5 ⁇ 10 17 cm -3 is selected as the first sub-cell base region.
  • An n-type emitter region is obtained by diffusion method on the surface of the substrate to obtain a first subcell having a band gap of 1.11 eV and a thickness of the emitter region of preferably 100 nm; and an n-type InGaP window layer 110 is grown on the emitter region, the thickness of which is At 25 nm, the doping concentration is around 1 ⁇ 10 18 cm -3 .
  • GaAs x P 1-x graded buffer layer 500 is epitaxially grown on the first sub-cell 100.
  • the details are as follows: First, a series of GaAs x P 1-x material layers with increasing As composition are deposited as GaAs x P 1-x lattice grading layer 510 with a variation range of 0.05-0.95; then a layer of GaAs material is deposited as a layer.
  • the stress balance layer 520 has a thickness greater than the thickness of the front graded layer; finally, a layer of GaAs x P 1-x material is deposited as the GaAs x P 1-x target lattice layer 530, and the lattice constant of the layer is smaller than that of the GaAs crystal.
  • the grid constant, the thickness can be the same as the thickness of the previous gradient layer.
  • a heavily doped p++/n++-InGaP tunneling junction 401 is grown over the GaAs x P 1-x graded buffer layer 500 with a total thickness of 50 nm and a doping concentration of up to 2 ⁇ 10 19 cm -3 .
  • a second sub-cell 200 is formed over the tunnel junction 401.
  • a p-AlGaInP material layer is epitaxially grown as a back field layer 210 over the tunneling junction 401, having a thickness of 50 nm, a doping concentration of 1 to 2 ⁇ 10 18 cm -3 , and then, in the back field layer 210
  • the p-GaAs 0.90 P 0.10 material layer is grown as the base region 220, the band gap is 1.60 eV, the thickness is 3 micrometers, and the gradient doping method is used, the concentration is 1 ⁇ 5 ⁇ 10 17 cm -3 ; then, above the base region 220
  • the n+-GaAs 0.90 P 0.10 material layer is grown as an emitter region 230 having a thickness of 100 nm and a doping concentration of about 2 ⁇ 10 18 cm -3 .
  • an n-type InAlP material layer is grown on the emitter region 230 as a window layer 240. The thickness is
  • a heavily doped P++/n++-InGaAsP tunneling junction 402 is grown over the second subcell 200 with a thickness of 50 nm and a doping concentration of up to 2 ⁇ 10 19 cm -3 .
  • a third sub-cell 300 is epitaxially grown over the tunnel junction 402.
  • the p+-AlInP material layer is epitaxially grown as a back field layer 310 with a thickness of 40 nm and a doping concentration of about 1 ⁇ 10 18 Cm -3
  • the P material layer serves as the base region 320, has a thickness of 2 ⁇ m, and has a doping concentration of 5 ⁇ 10 17 Cm -3
  • the P material layer serves as the emitter region 330 with a thickness of 200 nm and a doping concentration of up to 2 ⁇ 10 18 Cm -3
  • an n-type InAlP material layer is grown over the emitter region 330 as a window layer 340 having a thickness of 25 Nm, doping concentration is 1 ⁇ 10 18 Cm -3 about.
  • a layer of heavily doped n++-InGaP capping layer 600 is overlying the third subcell 300.
  • thickness is 1000 nm
  • doping concentration is 1 ⁇ 10 19 Cm -3 .
  • the surface of the sample is subjected to anti-reflection vapor deposition, preparation of a metal electrode, and the like, to complete the required solar cell.
  • a three-junction solar cell prepared according to the above method includes: a Si-based first sub-cell 100, GaAsP second sub-cell 200, InGaP third sub-cell 300 and GaAs x P 1-x Gradient buffer layer 500, each subcell passes through a tunnel junction 401, 402 connect them.
  • the Si-based first sub-cell 100 is formed on the p-type Si substrate, and an n-type region is formed as an emission region over the substrate by a diffusion method, and has a band gap of 1.11 eV.
  • the GaAs x P 1-x graded buffer layer 500 is located between the Si-based subcell and the GaAsP subcell to overcome the lattice mismatch between the two junction cells.
  • the GaAs x P 1-x graded buffer layer 500 is a layered multilayer structure with a lattice constant ranging from 5.43 to 5.51 ⁇ and a band gap variation range of 1.54 to 2.62 eV, which is close to the end of the Si cell and consists of a series of
  • the As-component gradually increasing GaAs x P 1-x lattice grading layer 510 is composed of a range of 0.05 to 0.95; above the lattice-grading layer 510 is a GaAs stress-balancing layer 520 having a thickness of about 500 nm in GaAs.
  • the stress balance layer 520 is a GaAs x P 1-x target lattice layer 530 having a lattice constant smaller than the GaAs lattice constant as a termination layer of the graded buffer layer 500.
  • the GaAs stress balancing layer 520 balances the stress generated by the stack of upper and lower materials.
  • the GaAs x P 1-x graded buffer layer 500 has a total of 8 layers, respectively GaAs 0.15 P 0.85 , GaAs 0.30 P 0.70 , GaAs 0.40 P 0.60 , GaAs 0.55 .
  • the first 6 layers are GaAs x P 1-x lattice grading layer 510, each layer has a thickness of 250 nm, and the seventh layer is GaAs stress balance layer 520, the thickness of which is preferably 500 nm, and the eighth layer is GaAs x P 1-x target lattice layer 530.
  • the GaAsP subcell 200 is adjusted by the As composition to adjust the band gap to 1.40 to 1.60 eV, and the lattice constant is matched with the GaAs x P 1-x graded buffer layer termination layer.
  • the InGaP subcell 300 is adjusted to have a band gap of 1.90 to 2.20 eV by a change in In composition, and the lattice constant is matched with the GaAsP subcell 200.
  • GaAs 0.90 P 0.10 is selected as the material of the second sub-cell PN junction
  • the band gap is 1.60 eV
  • In 0.37 Ga 0.63 P is selected as the material of the third sub-cell PN junction.
  • the two-junction cell can be realized in the case of lattice matching.
  • the solid line range of Figure 1 is the bandgap range of the second and third sub-cells.
  • the band gap of the second sub-cell is generally 1.40 ⁇ 1.60 eV
  • the band gap of the third sub-cell is 1.90 ⁇ 2.20 eV.

Abstract

Cette invention concerne une cellule solaire triple jonction et son procédé de fabrication. Ledit procédé comprend les étapes consistant à : utiliser un substrat de type P à base de Si (110) au-dessus duquel est formée par diffusion une première sous-cellule (100) dotée d'une première bande interdite; une couche tampon graduée à base de GaAsxP1-x (500) comprenant des composants gradués développés par croissance épitaxiale au-dessus de la première sous-cellule et dotée d'une deuxième bande interdite, supérieure à la première bande interdite; une deuxième sous-cellule à base de GaAsP (200) formée au-dessus de la couche tampon graduée (500), et dotée d'une troisième bande interdite supérieure à la première bande interdite; et une troisième sous-cellule à base de InGaP (300) formée au-dessus de la deuxième sous-cellule, dotée d'une quatrième bande interdite supérieure à la troisième bande interdite et présentant un pas de réseau correspondant à la deuxième sous-cellule (200). La régulation simultanée des constituants x et y de l'As et du P dans la deuxième sous-cellule à base de GaAsxP1-x (200) et dans la troisième sous-cellule à base de InyGa1-yP (300), l'invention permet de réaliser une cellule à double jonction présentant diverses combinaisons de bande interdite en accord de réseau, et d'agrandir considérablement l'espace de sélection des cellules solaires multi-jonction.
PCT/CN2013/072858 2012-04-11 2013-03-19 Cellule solaire triple jonction et son procédé de fabrication WO2013152658A1 (fr)

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Publication number Priority date Publication date Assignee Title
CN102637775A (zh) * 2012-04-11 2012-08-15 天津三安光电有限公司 三结太阳能电池及其制备方法
CN103633181B (zh) * 2013-11-28 2016-07-06 上海空间电源研究所 一种含有ii型异质结窗口层的太阳电池
CN105322044B (zh) * 2014-07-25 2017-12-19 江苏宜兴德融科技有限公司 多结太阳能电池外延结构
CN104465809B (zh) * 2014-11-28 2017-01-18 中山德华芯片技术有限公司 一种双面生长的硅基四结太阳电池
CN114649437A (zh) * 2020-12-18 2022-06-21 江苏宜兴德融科技有限公司 一种锗多结太阳能电池及其制备方法
CN113921642B (zh) * 2021-10-21 2024-04-19 北京工业大学 一种Si基双面三结太阳能电池及其制备方法
CN114171615B (zh) * 2021-11-10 2023-12-29 江苏华兴激光科技有限公司 一种硅基多结太阳电池及其渐变缓冲层

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101241945A (zh) * 2008-02-04 2008-08-13 苏州纳米技术与纳米仿生研究所 硅基高效多结太阳电池及其制备方法
CN101728458A (zh) * 2008-12-26 2010-06-09 上海联孚新能源科技有限公司 多结太阳电池的制造方法
CN102011182A (zh) * 2010-09-28 2011-04-13 中国电子科技集团公司第十八研究所 一种晶格渐变缓冲层的制备方法
CN102637775A (zh) * 2012-04-11 2012-08-15 天津三安光电有限公司 三结太阳能电池及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10069026B2 (en) * 2005-12-19 2018-09-04 The Boeing Company Reduced band gap absorber for solar cells
CN103354250B (zh) * 2010-03-19 2016-03-02 晶元光电股份有限公司 一种具有渐变缓冲层太阳能电池

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101241945A (zh) * 2008-02-04 2008-08-13 苏州纳米技术与纳米仿生研究所 硅基高效多结太阳电池及其制备方法
CN101728458A (zh) * 2008-12-26 2010-06-09 上海联孚新能源科技有限公司 多结太阳电池的制造方法
CN102011182A (zh) * 2010-09-28 2011-04-13 中国电子科技集团公司第十八研究所 一种晶格渐变缓冲层的制备方法
CN102637775A (zh) * 2012-04-11 2012-08-15 天津三安光电有限公司 三结太阳能电池及其制备方法

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