WO2013150562A1 - Réseau d'émetteurs d'électrons et dispositif d'imagerie le comprenant - Google Patents

Réseau d'émetteurs d'électrons et dispositif d'imagerie le comprenant Download PDF

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Publication number
WO2013150562A1
WO2013150562A1 PCT/JP2012/002282 JP2012002282W WO2013150562A1 WO 2013150562 A1 WO2013150562 A1 WO 2013150562A1 JP 2012002282 W JP2012002282 W JP 2012002282W WO 2013150562 A1 WO2013150562 A1 WO 2013150562A1
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WO
WIPO (PCT)
Prior art keywords
electron
electrode layer
emission
focusing electrode
layer
Prior art date
Application number
PCT/JP2012/002282
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English (en)
Japanese (ja)
Inventor
吉成　正樹
大塚　正志
Original Assignee
パイオニア株式会社
パイオニア・マイクロ・テクノロジー株式会社
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Priority to PCT/JP2012/002282 priority Critical patent/WO2013150562A1/fr
Publication of WO2013150562A1 publication Critical patent/WO2013150562A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2203/00—Electron or ion optical arrangements common to discharge tubes or lamps
    • H01J2203/02—Electron guns
    • H01J2203/0204—Electron guns using cold cathodes, e.g. field emission cathodes
    • H01J2203/0208—Control electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2203/00—Electron or ion optical arrangements common to discharge tubes or lamps
    • H01J2203/02—Electron guns
    • H01J2203/0204—Electron guns using cold cathodes, e.g. field emission cathodes
    • H01J2203/0208—Control electrodes
    • H01J2203/024—Focusing electrodes
    • H01J2203/0244—Focusing electrodes characterised by the form or structure
    • H01J2203/0248—Shapes or dimensions of focusing electrode openings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2203/00—Electron or ion optical arrangements common to discharge tubes or lamps
    • H01J2203/02—Electron guns
    • H01J2203/0204—Electron guns using cold cathodes, e.g. field emission cathodes
    • H01J2203/0208—Control electrodes
    • H01J2203/024—Focusing electrodes
    • H01J2203/026—Relative position to the gateelectrodes, emitters, cathodes or substrates

Definitions

  • the present invention relates to an electron-emitting device array having a plurality of emission sites on the surface of an electron-emitting layer and an imaging apparatus including the same.
  • a field emission electron source imaging device including a field emission electron source array unit is known (see Patent Document 1).
  • This field emission type electron source imaging device is arranged to face a field emission type electron source array part in which a plurality of electron source cells are arranged, and the field emission type electron source array part, and converts incident light into an electric signal.
  • a target unit including a photoelectric conversion film, a deflection accelerating electrode disposed between the field emission electron source array unit and the target unit and deflecting and accelerating an electron beam emitted from an electron source cell (corresponding to a pixel); It is equipped with.
  • the plurality of electron source cells and the plurality of electron beam passage holes formed by the deflection acceleration electrodes correspond to each other one to one.
  • the deflection acceleration electrode is composed of a pair of comb-shaped horizontal deflection acceleration electrodes and a pair of comb-shaped vertical deflection acceleration electrodes, and the pair of horizontal deflection acceleration electrodes and the pair of vertical deflection acceleration electrodes intersect each other. A plurality of electron beam passage holes are formed.
  • An object of the present invention is to provide an electron-emitting device array that can sufficiently and efficiently narrow down an electron beam emitted from an electron-emitting layer and an imaging device including the same.
  • the electron-emitting device array of the present invention includes an electron-emitting portion having a plurality of emission sites on the surface, and an electric field function unit disposed above the electron-emitting unit, and the electric field function unit corresponds to each emission site.
  • the individual focusing electrode layer for individually focusing the electron beams emitted from the plurality of emission sites and the electron beams emitted from the plurality of emission sites are collectively provided corresponding to the plurality of emission sites. And a collective focusing electrode layer for focusing.
  • the electron beam emitted from the plurality of emission sites of the electron emission portion is narrowed down in two stages by the individual focusing electrode layer and the collective focusing electrode layer. That is, the electron beam emitted from each emission site is narrowed down by the individual focusing electrode layer. For example, an electron beam spread and emitted in an inverted conical shape is narrowed down into a cylindrical shape by the individual focusing electrode layer. Subsequently, the plurality of electron beams emitted from the plurality of emission sites and formed into a columnar shape are narrowed down so as to be bundled by the collective focusing electrode layer.
  • the voltage applied to the individual focusing electrode layer and the collective focusing electrode layer can be kept low, and the electric fields generated by the individual focusing electrode layer and the collective focusing electrode layer do not cause electrons to be kicked.
  • the electron beam that has passed through the focusing electrode layer can be efficiently narrowed down.
  • the collective focusing electrode layer may be provided with one pixel (one electron-emitting device) as a unit as long as an electric field can be applied to the electron beam, or with a plurality of pixels as a unit. Also good.
  • the electric field function unit further includes an acceleration electrode layer that is provided corresponding to the plurality of emission sites and accelerates the electrons emitted from the plurality of emission sites collectively.
  • the plurality of electron beams narrowed down to be bundled are accelerated so as to be pulled by the acceleration electrode layer. Thereby, the narrowed-down state is maintained and the diffusion of the electron beam can be suppressed.
  • the individual focusing electrode layer, the collective focusing electrode layer, and the acceleration electrode layer are disposed in this order from the electron emission portion side.
  • the electron beam can be sufficiently narrowed as a whole by narrowing the electron beam with the individual focusing electrode layer and further narrowing the electron beam with the collective focusing electrode layer. Furthermore, since the sufficiently narrowed electron beam is accelerated by the acceleration electrode layer, the sufficiently narrowed electron beam can be efficiently incident on the target.
  • the collective focusing electrode layer collectively focuses the electron beams emitted from the plurality of emission sites in units of electron emitting elements
  • the acceleration electrode layer is configured to emit electrons emitted from the plurality of emission sites. Is preferably accelerated in a unit of electron-emitting devices.
  • the voltage applied to the collective focusing electrode layer and the acceleration electrode layer can be kept low.
  • the distance between the individual focusing electrode layer and the collective focusing electrode layer is 0.4 ⁇ m or more and 6 ⁇ m or less.
  • the potential difference from the voltage applied to the collective focusing electrode layer is -15V or more and 5V or less with reference to the voltage applied to the individual focusing electrode layer.
  • the electron beam can be narrowed down by cooperating the individual focusing electrode layer and the collective focusing electrode layer, and the electron beam can be narrowed down sufficiently and efficiently.
  • the distance between the individual focusing electrode layer and the collective focusing electrode layer is adjusted by the insulating layer or the insulating space.
  • An imaging apparatus includes an emission array unit having the above-described electron-emitting device array, and a light receiving conversion unit having a photoelectric conversion layer facing the emission array unit in a vacuum space. To do.
  • the resolution can be increased and a clear image can be obtained.
  • FIG. 2 is a schematic cross-sectional view enlarging the emission site 1. It is explanatory drawing which represented typically the convergence state of the emitted electron beam. It is a figure showing the simulation result regarding optimization of the separation dimension and potential difference of an individual focusing electrode layer and a collective focusing electrode layer. It is a plane schematic diagram of the imaging device concerning other embodiments.
  • electron-emitting device array according to an embodiment of the present invention and an imaging apparatus including the same will be described with reference to the accompanying drawings.
  • electron-emitting devices having a cold cathode type electron source are arranged in a matrix, and one electron-emitting device constitutes one pixel in the imaging apparatus.
  • FIG. 1 is a schematic cross-sectional view in which a portion corresponding to one pixel of the image pickup apparatus is enlarged
  • FIG. 2 is a schematic cross-sectional view in which an area around any one emission site is further enlarged.
  • the imaging apparatus 1 faces the emission array section 2 having the electron emission element array 6 in which a plurality of electron emission elements 23 are arranged in a matrix, and the emission array section 2 with the vacuum space 3 present.
  • the light receiving conversion unit 3 having the photoelectric conversion layer 13 is provided.
  • the electron-emitting device array 6 includes an electron emitting portion 8 having a plurality of emission sites 35 that emit electrons, and is disposed above the electron emitting portion 8 to focus the electron beams emitted from the plurality of emission sites 35.
  • an accelerating electric field function unit 9 is provided.
  • an electron / hole pair corresponding to the amount of light incident on the photoelectric conversion layer 13 is generated.
  • the holes are accelerated by a strong electric field applied to the photoelectric conversion layer 13 and collide with electrons constituting the HARP film described later to generate new electron / hole pairs.
  • the avalanche-amplified holes move to the vacuum space 3 side of the photoelectric conversion layer 13 and are accumulated on the surface to form a hole pattern corresponding to the incident light image.
  • the electrons emitted from the respective electron-emitting devices 23 of the emission array section 2 are focused and accelerated, enter the photoelectric conversion layer 13, and combine with the hole pattern.
  • a video signal corresponding to the incident light image can be obtained by extracting the current generated during the coupling.
  • the light receiving conversion unit 4 includes a transparent upper substrate 11 made of quartz or sapphire, an anode electrode layer 12 that is a transparent electrode laminated on the lower surface of the upper substrate 11, and a photoelectric conversion layer 13 laminated on the lower surface of the anode electrode layer 12. And have.
  • the upper substrate 11 may be transparent with respect to visible light, or may be transparent with respect to ultraviolet rays or infrared rays depending on applications.
  • the photoelectric conversion layer 13 is composed of, for example, a HARP (High-gain Avalanche Rushing amorphous Photoconductor) film mainly composed of amorphous selenium, and has high sensitivity characteristics due to the avalanche multiplication described above.
  • HARP High-gain Avalanche Rushing amorphous Photoconductor
  • the light receiving conversion unit 4 configured as described above is intimately joined to the emission array unit 2 via a spacer and a seal (not shown) to form a vacuum space 3 between the emission array unit 2.
  • a color filter is formed on the upper surface of the upper substrate 11. In this case, R, G, and B video signals are detected.
  • the emission array unit 3 includes a lower substrate 21 made of glass or silicon, a drive circuit layer 22 laminated on the lower substrate 21, and a plurality of electron emission elements 23 (electron emission element array 6) laminated on the drive circuit layer 22. ) And.
  • An active matrix drive circuit (switch circuit) is formed in the drive circuit layer 22, and a clock signal, a synchronization signal, and the like are input from a horizontal scanning circuit and a vertical scanning circuit (not shown) through the active matrix drive circuit. Is done. Thereby, an electron beam is sequentially emitted from the plurality of electron-emitting devices 23 (dot sequential driving).
  • the electron emission portion 8 includes a cathode electrode layer 31 made of tungsten (W), an electron emission layer 32 laminated on the cathode electrode layer 31 and made of amorphous silicon (a-Si), and an electron emission layer. 32, a first insulator layer 33 made of silicon oxide (SiO 2 ) or tetraethoxysilane (PTEOS), a gate electrode layer 34 stacked on the first insulator layer 33, and a gate electrode A plurality of emission sites 35 penetrating the layer 34 and the first insulator layer 33 and exposing the electron emission layer 32 at the bottom; a carbon layer 36 formed from the gate electrode layer 34 to the inside of the emission site 35; have.
  • a cathode electrode layer 31 made of tungsten (W)
  • a-Si amorphous silicon
  • PTEOS tetraethoxysilane
  • the carbon layer 36 conducts the gate electrode layer 34 and the electron emission layer 32 and acts to enhance the electron emission performance of the electron emission layer 32.
  • the first insulator layer 33 has a thickness of 200 nm
  • the gate electrode layer 34 has a thickness of 60 nm
  • the carbon layer 36 has a thickness of 8 nm.
  • the diameter of each emission site 35 formed in a circular shape is set to 520 nm.
  • the electric field function unit 9 includes an individual focusing electrode layer 43 disposed above the gate electrode 34 with the second insulator layer 41 and the third insulator layer 42 (or insulating space) (see FIG. 2), A fourth insulator layer 44 laminated on the individual focusing electrode layer 43, a collective focusing electrode layer 45 laminated on the fourth insulator layer 42, and a fifth insulator layer 46 laminated on the collective focusing electrode layer 45; , And an acceleration electrode layer 47 stacked on the fifth insulator layer 46 (see FIG. 1).
  • the individual focusing electrode layer 43, the collective focusing electrode layer 45, and the accelerating electrode layer 47 are all made of tungsten (W) or the like, and all have a layer thickness of 50 nm.
  • the second insulator layer 41 is made of silicon nitride (PSIN) and has a layer thickness of 100 nm.
  • the third insulator layer 42 is made of tetraethoxysilane (PTEOS) and has a layer thickness of 50 nm.
  • PTEOS tetraethoxysilane
  • the layer end of the second insulator layer 41 is formed to recede sufficiently from the emission site 35, and the individual focusing electrode layer 43 and the gate electrode layer 34 are in a conductive state by the carbon layer 36 during the manufacturing process. Is prevented.
  • this portion may be an insulating space.
  • the fourth insulator layer 44 is made of silicon oxide (SiO 2 ) or the like and has a layer thickness of 0.4 ⁇ m or more and 6 ⁇ m or less.
  • the 4th insulator layer 44 of embodiment is formed in the layer thickness of 3 micrometers.
  • the fifth insulator layer 46 is made of silicon oxide (SiO 2 ) or the like and has a layer thickness of 100 ⁇ m.
  • the individual focusing electrode layer 43 is provided corresponding to each emission site 35 and individually focuses the electron beams emitted from the plurality of emission sites 35.
  • the individual focusing electrode layer 43 does not become an obstacle to the electron beam emitted so as to spread upward from each emission site 35 and so that the electric field can be applied to the electron beam. It is formed in a similar shape that is slightly larger than 35 (see FIG. 4). That is, each circular opening portion of the individual focusing electrode layer 43 corresponding to each circular emission site 35 is formed with a diameter of 1.0 ⁇ m with respect to the diameter 520 nm of the emission site 35.
  • the collective focusing electrode layer 45 is provided corresponding to the plurality of emission sites 35, and focuses the plurality of electron beams emitted from the plurality of emission sites 35 so as to be bundled together. That is, the collective focusing electrode layer 45 corresponds to the pixel (electron-emitting device 23) and is formed in a lattice shape of 13.75 ⁇ m ⁇ or 13.75 ⁇ m ⁇ 13.75 ⁇ m.
  • the acceleration electrode layer 47 is provided corresponding to the plurality of emission sites 35 and accelerates the electrons emitted from the plurality of emission sites 35 collectively. That is, the collective focusing electrode layer 47 corresponds to the pixel (electron-emitting device 23) and is formed in a lattice shape of 13.75 ⁇ m ⁇ or 13.75 ⁇ m ⁇ 13.75 ⁇ m.
  • the collective focusing electrode layer 43 and the acceleration electrode layer 45 may be provided in units of one pixel (one electron-emitting device 23) as long as an electric field can be applied to the electron beam, or a plurality of pixels. (For example, four adjacent pixels) may be provided as a unit.
  • the separation distance between the individual focusing electrode layer 43 and the collective focusing electrode layer 45 that is, the layer thickness of the fourth insulator layer 44 is 3 ⁇ m, and the collective focusing electrode layer 45 and the acceleration electrode layer 47 are arranged.
  • the thickness of the fifth insulator layer 46 that is spaced apart from is set to 100 ⁇ m.
  • the thickness gauge of the second insulator layer 41 and the third insulator layer 42 between the individual focusing electrode layer 43 and the gate electrode 34 is set to 150 nm, and between the acceleration electrode layer 47 and the photoelectric conversion layer 13 described above. Is set to 0.40 mm.
  • the electric field function unit 9 configured in this manner has an extremely large height dimension compared to the planar dimension of the electron-emitting device 23 (pixel). It is preferable that the upper layered structure (the fourth insulator layer 44, the collective focusing electrode layer 45, the fifth insulator layer 46, and the acceleration electrode layer 47) is separately manufactured and bonded on the fourth insulator layer 44. . In addition to the individual focusing electrode layer 43, the fourth insulator layer 44 and the collective focusing electrode layer 45 may be manufactured integrally with the electron emission portion 8.
  • the individual focusing electrode layer 43 is provided corresponding to each emission site 35
  • the collective focusing electrode layer 45 and the acceleration electrode layer 47 are provided corresponding to each pixel (electron emitting element 23). It has been. That is, the electric field generated by the individual focusing electrode layer 43 to which a predetermined voltage is applied acts on the electron beam emitted from each emission site 35. In addition, the electric field generated by the collective focusing electrode layer 45 and the acceleration electrode layer 47 to which a predetermined voltage is applied acts collectively on the electron beams emitted from the plurality of emission sites 35 in the pixel.
  • the individual focusing electrode layer 43 focuses electrons (electron beams) emitted from each emission site 35 so as to diffuse upward. That is, the individual focusing electrode layer 43 focuses the electron beam emitted from each emission site 35 (emission part 35a) obliquely upward so as to spread in an inverted conical shape into a substantially cylindrical shape.
  • the collective focusing electrode layer 45 focuses the cylindrical electron beam so as to be bundled in units of pixels. That is, by the action of the electric field of the collective focusing electrode layer 45, the electron beam passing through the central portion of the electric field is emitted upward as it is, while the electron beam passing away from the central portion of the electric field is slightly deflected, A plurality of electron beams for each pixel are focused so as to be bundled. Thereby, the plurality of electron beams for each pixel are focused so as to be integrated or close to each other. Further, the accelerating electrode layer 47 accelerates the plurality of narrowed electron beams so as to pull them, and makes them incident on the photoelectric conversion layer 13 in a spot shape while suppressing the diffusion of electrons.
  • the collective focusing electrode layer 45 and the acceleration electrode layer 47 are provided in units of a plurality of pixels, for example, four adjacent pixels, the collective focusing electrode layer 45 and the acceleration electrode layer 47 are In addition to bundling a plurality of electron beams of each pixel, the plurality of electron beams as a whole are focused so as to be bundled. For this reason, the four sets of electron beams are incident on the photoelectric conversion layer 13 at positions close to the centers of the four pixels (the corners of each pixel or the center of the four pixels). The emission current generated in the photoelectric conversion layer 13 is extracted as a video signal in units of pixels.
  • FIG. 4 is a diagram showing a simulation result regarding optimization of the distance between the individual focusing electrode layer 43 and the collective focusing electrode layer 45 and optimization of the potential difference.
  • a voltage of 20 V was applied to the gate electrode layer 34
  • a voltage of 5 V was applied to the individual focusing electrode layer 43
  • a voltage of 400 V was applied to the acceleration electrode layer 47.
  • 27 emission sites 35 are formed in one pixel.
  • the distance between the individual focusing electrode layer 43 and the collective focusing electrode layer 45 is changed stepwise to 0.4 ⁇ m, 1 ⁇ m, 2 ⁇ m, 3 ⁇ m, 4 ⁇ m, 5 ⁇ m, and 6 ⁇ m
  • the applied voltage to the collective focusing electrode layer 45 is changed in accordance with the separation dimension so that the potential (voltage) becomes ⁇ 10 V, 0 V, 0 V, 0 V, 0 V, 10 V, 10 V, that is, the individual focusing electrode layer 43.
  • the simulation was performed so that the potential difference from (5V) was ⁇ 15V, ⁇ 5V, ⁇ 5V, ⁇ 5V, ⁇ 5V, 5V, and 5V.
  • FIG. 4B is a simulation result showing the relationship between the separation dimension (potential difference) and the emission current generated in the photoelectric conversion layer 13. As shown in the figure, it was confirmed that the emission current was approximately 1.0 ⁇ A except for the separation size of 4 ⁇ m (potential 0 V: potential difference ⁇ 5 V). Since the emission current for the function of the imaging apparatus 1 is 0.2 ⁇ A, an emission current five times that is obtained.
  • FIG. 4C is a simulation result showing the relationship between the above-described separation dimension (potential difference) and the diameter of the electron beam incident on the photoelectric conversion layer 13, so-called spot diameter.
  • the spot diameter of the electron beam on the back surface of the photoelectric conversion layer 13 was 30 ⁇ m to 60 ⁇ m.
  • the separation size was 3 ⁇ m (potential 0 V: potential difference ⁇ 5 V)
  • the spot diameter was 28 ⁇ m.
  • the distance between the individual focusing electrode layer 43 and the collective focusing electrode layer 45 is 0.4 ⁇ m to 6 ⁇ m.
  • the potential difference between the individual focusing electrode layer 43 and the collective focusing electrode layer 45 is appropriately set to ⁇ 15 V or more and 5 or less.
  • the applied voltage (potential) of the gate electrode layer 34 is 20 V
  • the applied voltage (potential) of the individual focusing electrode layer 43 is 5 V
  • the applied voltage (potential) of the collective focusing electrode layer 45 is 0 V
  • the applied voltage (potential) of the layer 47 is set to 400 V
  • the distance between the individual focusing electrode layer 43 and the collective focusing electrode layer 45 is set to 3 ⁇ m.
  • the electron emission portion 8 (electron emission element 23) is provided.
  • the electron beams emitted from the plurality of emission sites 35 are individually narrowed and further collectively narrowed and accelerated. Therefore, the voltage applied to the individual focusing electrode layer 43 and the collective focusing electrode layer 45 can be kept low, and the electron beam can be efficiently narrowed and incident on the photoelectric conversion layer 13. For this reason, it is possible to obtain a high emission current as compared with the applied voltage for electron emission, and the resolution of the imaging device 1 can be significantly increased.
  • the individual focusing electrode layer 43, the collective focusing electrode layer 45, and the acceleration electrode layer 47 are arranged in this order from the electron emission unit 8 side.
  • the order is not limited.
  • the individual focusing electrode layer 43, the acceleration electrode layer 47, and the collective focusing electrode layer 45 may be arranged in this order from the electron emission portion 8 side, or the collective focusing electrode layer 45, the individual focusing electrode layer 43, and the acceleration electrode layer. You may arrange
  • portions different from the first embodiment are mainly described for the imaging device 1 according to another embodiment.
  • the electrons are emitted from the bottom corner (emission part 35a) of the emission site 35.
  • the individual focusing electrode 43 is formed in a similar shape that is wider than the emission site 35A in plan view (not shown).
  • the electron beam emitted from the ring-shaped emission site 35A is focused by the individual focusing electrode 43 so as to form an approximately triple cylinder, and further, the photoelectric conversion layer is collected by the collective focusing electrode layer 45 so as to be combined into a circular cross section. 13 is incident.
  • the spot diameter of the electron beam was 30 ⁇ m, and an emission current of 1.36 ⁇ A was obtained.
  • a single spiral emission site 35B is provided in a plan view (for each pixel). Also in this case, the individual focusing electrode 43 is formed in a similar shape that is wider than the emission site 35B in plan view (not shown). Thereby, the total extension of the emission part 35a can be formed long, and a high emission current can be obtained. Note that the emission site 35B may be formed in an angular spiral shape together with a rectangular pixel.
  • a single meandering emission site 35C in a plan view is provided (for each pixel).
  • the individual focusing electrode 43 is formed in a similar shape that is wider than the emission site 35C in plan view (not shown). Thereby, the total extension of the emission part can be formed long, and a high emission current can be obtained.
  • 1, 1A, 1B, 1C imaging device 2 emission array section, 3 vacuum space, 4 light receiving conversion section, 6 electron emission element array, 8 electron emission section, 9 electric field function section, 13 photoelectric conversion layer, 23 electron emission element, 31 cathode electrode layer, 32 electron emission layer, 33 first insulator layer, 34 gate electrode layer, 35, 35A, 35b, 35c emission site, 36 carbon layer, 41 second insulator layer, 42 third insulator layer, 43 individual focusing electrode layers, 44 fourth insulator layer, 45 collective focusing electrode layer, 46 fifth insulator layer, 47 acceleration electrode layer

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  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

La présente invention a pour but de fournir un réseau d'émetteurs d'électrons capable de faire converger suffisamment et efficacement des faisceaux d'électrons émis d'une couche émettrice d'électrons, ainsi qu'un dispositif d'imagerie comprenant le réseau d'émetteurs d'électrons. A cette fin, le réseau d'émetteurs d'électrons comprend : une partie émettrice d'électrons qui comprend plusieurs sites d'émission sur la surface, et une partie à fonction de champ électrique qui est disposée au-dessus de la partie émettrice d'électrons. La partie à fonction de champ électrique comprend : des couches d'électrodes de focalisation distinctes disposées de manière à correspondre aux sites d'émission respectifs et de manière à faire converger séparément les faisceaux d'électrons émis desdits plusieurs sites d'émission, et une couche d'électrode de focalisation commune conçue pour correspondre auxdits plusieurs sites d'émission de manière à faire converger collectivement tous les faisceaux d'électrons émis depuis lesdits plusieurs sites d'émission.
PCT/JP2012/002282 2012-04-02 2012-04-02 Réseau d'émetteurs d'électrons et dispositif d'imagerie le comprenant WO2013150562A1 (fr)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09219155A (ja) * 1996-02-13 1997-08-19 Nec Corp 冷陰極電子銃装置とこれを用いた陰極線管装置
JP2011210641A (ja) * 2010-03-30 2011-10-20 Nippon Hoso Kyokai <Nhk> 電子放出源アレイ、撮像装置、及び表示装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09219155A (ja) * 1996-02-13 1997-08-19 Nec Corp 冷陰極電子銃装置とこれを用いた陰極線管装置
JP2011210641A (ja) * 2010-03-30 2011-10-20 Nippon Hoso Kyokai <Nhk> 電子放出源アレイ、撮像装置、及び表示装置

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