WO2013135117A1 - 磁电阻磁场梯度传感器 - Google Patents

磁电阻磁场梯度传感器 Download PDF

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WO2013135117A1
WO2013135117A1 PCT/CN2013/071090 CN2013071090W WO2013135117A1 WO 2013135117 A1 WO2013135117 A1 WO 2013135117A1 CN 2013071090 W CN2013071090 W CN 2013071090W WO 2013135117 A1 WO2013135117 A1 WO 2013135117A1
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magnetoresistive
magnetic field
bridge
field gradient
gradient sensor
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PCT/CN2013/071090
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English (en)
French (fr)
Inventor
白建军
迪克詹姆斯·G
刘明峰
沈卫锋
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江苏多维科技有限公司
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Application filed by 江苏多维科技有限公司 filed Critical 江苏多维科技有限公司
Priority to EP13761465.7A priority Critical patent/EP2827165B1/en
Priority to US14/384,666 priority patent/US9678178B2/en
Priority to JP2014561268A priority patent/JP2015511705A/ja
Publication of WO2013135117A1 publication Critical patent/WO2013135117A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R17/00—Measuring arrangements involving comparison with a reference value, e.g. bridge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/022—Measuring gradient
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors

Definitions

  • the invention relates to a magnetoresistive magnetic field gradient sensor, in particular to a magnetic field gradient sensor using an MTJ magnetoresistance as a sensitive component.
  • Magnetic sensors are widely used in modern electronic systems to sense magnetic field strength to measure physical parameters such as current, position, and direction.
  • sensors for measuring magnetic fields and other parameters such as the use of Hall elements, anisotropic magnetoresistance ( AMR) or giant magnetoresistance (GMR) as a magnetic sensor for sensitive components.
  • AMR anisotropic magnetoresistance
  • GMR giant magnetoresistance
  • the magnetic sensor with Hall element as the sensitive component has very low sensitivity.
  • the magnetic flux ring structure is used to amplify the magnetic field, which improves the sensitivity of the Hall output, thereby increasing the volume and weight of the sensor.
  • the Hall element has high power consumption and linearity. Poor defects.
  • the AMR component is much more sensitive than the Hall element, its linear range is narrow, and the magnetic sensor with AMR as the sensitive component needs to be set by the set/reset coil. The reset operation causes a complicated manufacturing process, and the arrangement of the coil structure increases the power consumption while increasing the size.
  • the magnetic sensor of the component as a sensitive component has higher sensitivity than the Hall sensor, but its linear range is low, and at the same time, GMR
  • the response curve of the component is evenly symmetrical, and only the unipolar magnetic field gradient can be measured.
  • the bipolar magnetic field gradient cannot be measured.
  • Tunnel junction magnetoresistance Magnetic Tunnel Junction
  • the component is a new magnetoresistance effect sensor that has been industrially applied in recent years, which utilizes the tunnel magnetoresistance of the magnetic multilayer film material (TMR, Tunnel Magnetoresistance).
  • TMR Tunnel Magnetoresistance
  • the effect of sensing the magnetic field has a greater rate of change in resistance than previously discovered and practical AMR components and GMR components.
  • MTJ Components have better temperature stability relative to Hall elements, higher sensitivity, lower power consumption, better linearity, no additional geomagnetic ring structure; relative to AMR Components with better temperature stability, higher sensitivity, wider linear range, no additional set/reset coil construction; relative to GMR Components have better temperature stability, higher sensitivity, lower power consumption, and a wider linear range.
  • the MTJ component has extremely high sensitivity, it is MTJ.
  • the magnetic sensor of the component as a sensitive component is interfered by the external magnetic field when the weak magnetic field is detected, and the high-sensitivity MTJ sensor does not realize low-cost mass production, especially the yield of the sensor depends on the MTJ.
  • the offset value of the reluctance output of the component makes it difficult to achieve high matching of the magnetic resistance of the MTJ component constituting the bridge, and the manufacturing process of the MTJ sensor integrated on the same semiconductor substrate is very complicated.
  • an object of the present invention is to provide an MTJ
  • the magnetic field gradient sensor with the component as a sensitive component has strong anti-external magnetic field interference capability, high magnetic field common mode rejection ratio, high sensitivity, wide linear range, low power consumption, small volume and good temperature characteristics.
  • the present invention provides a magnetoresistive magnetic field gradient sensor comprising a substrate, a magnetoresistive bridge and a permanent magnet respectively disposed on the substrate, and the magnetoresistive bridge includes two or more magnetoresistive arms
  • the magnetoresistive arm is composed of one or more magnetoresistive elements having a magnetic pinning layer, and the magnetic pinning layers of all the magnetoresistive elements have the same magnetic moment direction, and the permanent magnets are disposed on each of the magnetoresistive arms Nearby is used to provide a bias field and zero the offset of the response curve of the magnetoresistive element.
  • the pad of the magnetoresistive magnetic field gradient sensor can be connected to the lead through a lead On the package pins of the ASIC or leadframe.
  • the magnetoresistive element is an MTJ element.
  • the shape of the magnetoresistive element has anisotropy.
  • the magnetoresistive elements are prepared by the same process on the same substrate, having the same shape and resistance value.
  • the magnetoresistive bridge is a gradient half bridge.
  • the magnetoresistive bridge is a Wheatstone full bridge
  • the magnetic resistance bridge arms of the Wheatstone full bridge have the same sensitivity direction to detect the gradient magnetic field of the space, and the bridge arm resistance in the relative position of the Wheatstone full bridge structure At the same position of the gradient magnetic field, the bridge arm resistances in adjacent positions in the Wheatstone full bridge structure are at different positions of the gradient magnetic field.
  • the permanent magnet is magnetized to adjust the magnetization and direction of the permanent magnet to adjust the output performance of the magnetoresistive magnetic field gradient sensor.
  • the magnetoresistive magnetic field gradient sensor is a single chip magnetoresistive magnetic field gradient sensor.
  • the invention adopts the above structure, has the advantages of strong anti-external magnetic field interference capability, high magnetic field common mode suppression ratio, high sensitivity, wide linear range, low power consumption, small volume and good temperature characteristics.
  • FIG. 1 is a schematic diagram of a tunnel junction magnetoresistive element (MTJ).
  • MTJ tunnel junction magnetoresistive element
  • Figure 2 is a graph of the magnetoresistance change response of an MTJ component suitable for linear magnetic field measurements.
  • Figure 3 is a schematic illustration of multiple MTJ elements connected in series to form an equivalent MTJ magnetoresistor 20.
  • Figure 4 is a schematic view showing the placement of the MTJ component 1 and the on-chip permanent magnet 22.
  • Figure 5 is the permanent magnet 22 and MTJ element shown in Figure 4.
  • Figure 6 shows the MTJ by setting the angle between the permanent magnet 22 and the sensitive shaft 23. Schematic diagram of the offset of the component response and the saturation field strength.
  • Figure 7 is a schematic diagram of the structure of a half-bridge MTJ magnetoresistive gradient magnetic field sensor.
  • Figure 8 is an output measurement diagram of a half-bridge MTJ magnetoresistive gradient magnetic field sensor.
  • Figure 9 is a schematic diagram of the principle of a full-bridge MTJ magnetoresistive gradient magnetic field sensor.
  • Figure 10 is a schematic diagram of the structure of a full-bridge MTJ magnetoresistive gradient magnetic field sensor.
  • Figure 11 is an output measurement diagram of a full-bridge MTJ magnetoresistive gradient magnetic field sensor.
  • FIG. 1 is a simplified conceptual diagram of a MTJ multilayer membrane element.
  • the MTJ component 1 generally includes an upper ferromagnetic layer or an artificial antiferromagnetic layer ( Synthetic Antiferromagnetic, SAF) 5.
  • Lower ferromagnetic layer or SAF layer 3, tunnel barrier layer between two magnetic layers 4 .
  • the upper ferromagnetic layer (SAF layer) 5 constitutes a magnetic free layer whose magnetic moment direction 7 changes as the external magnetic field changes.
  • Lower ferromagnetic layer (SAF layer) 3 Is a fixed magnetic layer, because its magnetic moment direction 8 is pinned in one direction, so it will not change under normal conditions, usually ferromagnetic layer (SAF layer) 3 Also known as the pinned layer.
  • the pinned layer is typically a ferromagnetic layer or a SAF layer deposited above or below the antiferromagnetic layer 2.
  • the MTJ structure is usually deposited over the conductive bottom electrode layer 9 while MTJ Above the structure is the top electrode layer 6 .
  • the measured resistance value 12 between the bottom electrode layer 9 and the top electrode layer 6 of the MTJ represents the relative magnetic moment direction of the free layer 5 and the pinned layer 3.
  • the resistance 12 of the entire element is in a low resistance state.
  • the resistance 11 of the entire element is in a high resistance state.
  • MTJ component 1 by known techniques The resistance can vary linearly between a high impedance state and a low resistance state with an applied magnetic field.
  • the bottom electrode layer 9 and the top electrode layer 6 are directly associated with the antiferromagnetic layer 2 and the magnetic free layer 5 Electrical contact.
  • the electrode layer is typically a non-magnetic conductive material that can carry current into the ohmmeter 34 .
  • Ohm meter 34 Applicable to known currents through the entire tunnel junction and measuring current (or voltage).
  • the tunnel barrier layer 4 provides most of the resistance of the device, approximately 1000 ohms, while the resistance of all conductors is approximately 10 ohms.
  • the bottom electrode layer 9 is located above the insulating substrate 10, and the insulating substrate 10 is wider than the bottom electrode layer 9, which is located above the base substrate 11 of other materials.
  • Substrate 11 The material is usually silicon, quartz, heat resistant glass, GaAs, AlTiC Or any other material that can be integrated on the wafer. Silicon is the best choice because it is easy to process into an integrated circuit (although magnetic sensors do not always need such a circuit).
  • the response of a GMR or MTJ component suitable for linear magnetic field measurements is shown in Figure 2.
  • the response curve 13 is saturated at low resistance state 14 and high resistance state 15, and R L and R H represent resistance values of low resistance state and high resistance state, respectively.
  • the region of the response curve 13 between the saturation fields varies linearly with the external field (H) 19 .
  • the outer field 19 is parallel to the sensitive axis 23 of the sensing element.
  • the direction 8 of the magnetic moment of the pinned layer 3 is anti-parallel to the sensitive axis 23, meaning that it points in the direction of -H.
  • the response curve 13 of the magnetoresistive element is the maximum value R H , and when the two are parallel, it is the minimum value R L .
  • the intermediate value of the magnetoresistance response curve 13 varies with the angle between the free layer 5 and the pinned layer 3.
  • the H O value is often referred to as the 'Orange Peel' or 'Neel Coupling' field, with a typical value of 1 to 40 Oe. It is related to the structure and flatness of the ferromagnetic film in the magnetoresistive element, depending on the material and the manufacturing process.
  • H S is a saturated field.
  • H S is quantitatively defined as a value corresponding to the intersection of the tangent of the linear region and the tangent of the positive and negative saturation curves, which is taken in the case where the asymmetry of the response curve with respect to the H o point is eliminated.
  • Figure 2 shows the response curve 13 under ideal conditions.
  • the magnetoresistance R follows the external field H
  • the change is a perfect linear relationship, and there is no hysteresis (in the actual case, the response curve of the magnetoresistance has hysteresis with the change of the external field, which we call hysteresis.
  • the response curve of the magnetoresistance is a loop, usually used as an application.
  • the magneto-resistive material has a small hysteresis and can be regarded as a perfect linear curve in actual use. In the field of practical sensors, due to the constraints of magnetic sensing design and material defects, this curve 13 will be more curved.
  • MTJ component 1 Due to its small size, MTJ component 1 can be connected to an equivalent MTJ magnetoresistance 20 to increase sensitivity and reduce noise to 1/F (F is the number of MTJ components 1 connected in series), and its ESD performance can be improved at the same time. See Figure 3 for the implementation.
  • These MTJ component strings 20 A magnetoresistive arm that is used as a more complex circuit structure.
  • the MTJ element 1 forms a sandwich structure between the bottom electrode layer 9 and the top electrode layer 6, and the internal current 21 passes vertically through the MTJ element 1 The horizontal direction alternately flows through the top electrode layer 6 and the bottom electrode layer 9.
  • the bottom electrode layer 9 is above the insulating layer 10, and the insulating layer 10 is located on the bottom substrate 11 On.
  • each component string is the pad, which is the resistive arm and other components or ohmmeters.
  • the location of the connection can be connected by its components to other circuits on the chip without any other means of connection. In the normal case, the direction of current flow does not affect the effective resistance of the magnetoresistive arm 20, and the magnetoresistive arm 20
  • the resistance value can be set and adjusted according to the number of MTJ components 1.
  • the bridge is used to convert the resistance value of the magnetoresistive sensor into a voltage signal, so that the output voltage is easily amplified. This can change the noise of the signal, cancel the common mode signal, and reduce temperature drift or other deficiencies.
  • the above MTJ component string 20 Can be connected to form a bridge.
  • the MTJ element 1 is placed between the two permanent magnets 22.
  • the permanent magnets 22 have a gap (Gap) 38, a width (W) 39, a thickness (t) 40, and a length (L y ) 41 .
  • the permanent magnet 22 is designed to provide a bias field H cross 27 perpendicular to the gage sensitive shaft 23.
  • the permanent magnet 22 is magnetized by applying a large magnetic field, and finally the magnetic field distribution 43 around the permanent magnet 22 is as shown in FIG.
  • the magnetic field of the permanent magnet 22 is believed to be the result of the magnetic charge and magnetic moment boundary conditions formed between the edges 35 of the magnet as shown in FIG.
  • the magnitude of the magnetic charge varies with the magnitude and direction ⁇ 37 of the residual magnetization M r and is related to the tilt angle ⁇ sns 44 of the permanent magnet:
  • the magnetic field generated by the magnetic charge is: (3)
  • Equation (4) is a function of W39 and Gap38 shown in Figure 4, which represents the change of permanent magnets 22
  • the shape dimension and direction change the magnetic field generated by the permanent magnet at the position of the MTJ element, thereby changing the saturation field of the MTJ element 1.
  • the magnetic field applied by the permanent magnet 22 to the MTJ element is (5)
  • the magnetic field applied by the permanent magnet 22 is (6)
  • H off can be changed by adjusting the thickness, shape and angle ⁇ mag of the permanent magnet to compensate the Neil coupling field Ho of the MTJ element itself, so that the output characteristics are easier to apply and obtain better. performance.
  • H cross can also be adjusted to change the saturation field of the output characteristics of the MTJ component and adjust its sensitivity accordingly.
  • H cross 27 and the offset field H off 26 can be simultaneously generated, and the saturation field of the MTJ element can be set while the Neel coupling offset is eliminated.
  • the response curve of the MTJ component is zeroed in order to optimize the symmetry, negnet shift and sensitivity of the bridge output.
  • the angle ⁇ mag 37 of the remanence M r and the direction 23 of the sensitive axis is set to provide a fine adjustment device after the preparation of the gradiometer chip, which can minimize the offset value or symmetry, and the method can improve the product. Excellent rate.
  • the shape of the MTJ element 1 is generally anisotropic to provide shape anisotropy energy and is equivalent to an equivalent anisotropy field H k .
  • Commonly used shapes are long ellipse, long rectangle, rhomboid, and the like.
  • H s saturation field
  • the response characteristics of the MTJ element can be changed by changing the shape of the permanent magnet and the MTJ element.
  • FIG. 7 is a schematic diagram of the structure of a half-bridge MTJ gradient magnetic field sensor.
  • the MTJ magnetoresistors R1, R2 placed in the same sensitive direction form a half bridge, and the magnetoresistance is fabricated on the substrates 10, 11 and has electrical contacts on the substrate through which electrical interconnection can be achieved.
  • Typical connection structures include: chip-integrated connections, wire bonds, and solder ball connections.
  • the MTJ magnetoresistive 20 is surrounded by a slanted permanent magnet 22, and a constant voltage Vbias is input across the pad 28 and the pad 29, and the external field H changes in a gradient along the direction 23 of the sensitive axis, along the direction of the magnetic line.
  • the resistance values of the two MTJ magnetoresistors R1 and R2 at different positions are different, the arrow 8 represents the two MTJ magnetoresistances 20, the direction of the magnetic moment of the pinned layer 3, and the pad 30 is the output terminal V OUT .
  • the resistance of the MTJ magnetoresistance 20 prepared on the same substrate is almost the same, and it is impossible to be completely the same. There is a certain difference.
  • the resistance values of the two MTJ magnetoresistors are replaced by R1 and R2, respectively. The strongest are H1 and H2, and H1 and H2 can be decomposed into: , (9)
  • H CM and H dM are respectively called common mode external magnetic field and differential mode external magnetic field.
  • the gradient half-bridge only responds to the differential mode magnetic field and outputs a signal, and has good resistance to external field interference.
  • the measurement result of the typical output of the gradient half-bridge is shown in Fig. 8.
  • the difference from the ordinary half bridge is that the horizontal axis is a gradient magnetic field, the magnetic field is a gradient field, and the intensity of the magnetic field is attenuated along the direction of the magnetic induction line, and the magnetoresistances at different positions of the gradient magnetic field (such as R1 and R2)
  • the external field strengths H1 and H2 are different.
  • the gradient half-bridge sensor in practical application has a certain response to the common mode magnetic field H CM , but its response sensitivity to the common mode magnetic field is much lower than that.
  • the differential mode magnetic field, its ability to interfere with the external field can be expressed by the common mode rejection ratio CMRR: (15)
  • Figure 9 is a conceptual diagram of a full-bridge MTJ gradient magnetic field sensor
  • Figure 10 is a schematic diagram of a full-bridge MTJ gradient magnetic field sensor.
  • the MTJ magnetoresistors R1, R2, R3, and R4 with the same sensitive direction form a full bridge.
  • the magnetoresistance is fabricated on the substrates 10, 11 and has electrical contacts on the substrate through which electrical connections can be made. .
  • the bridge arm resistances R1 and R4 in the relative position of the Wheatstone full-bridge structure are at the same position of the gradient magnetic field, and R2 and R3 in the relative position of the Wheatstone full-bridge structure are in the same position of the gradient magnetic field.
  • the sensitivity directions of all the bridge arm resistances are the same.
  • the MTJ magnetoresistance 20 is surrounded by the inclined permanent magnets 22, and the constant voltage Vbias is input across the pads 28 and 29, and the external field H is gradient along the direction of the sensitive axis 23.
  • the resistance values of the two MTJ magnetoresistors R1 and R2 (R3 and R4) are different along the direction of the magnetic line, and the arrow 8 represents the direction of the magnetic moment of the pinned layer 3 of the four MTJ magnetoresistors 20, and the output
  • the voltage difference (V2-V1) between the terminal pads 32 and 33 is the output voltage V OUT .
  • the V OUT of the gradient full bridge does not respond to the common mode magnetic field H dM .
  • H dM common mode magnetic field
  • the above-described half-bridge and full-bridge gradiometers can be fabricated in one time on the same substrate using the same process, which we usually refer to as a single chip magnetoresistive magnetic field gradient sensor. It can also be fabricated in different chip packages using the same process on the same substrate. n A magnetoresistance is then used to form a half-bridge or full-bridge structure by cutting a single magnetoresistive chip and then electrically connecting the electrical contacts of the magnetoresistance by wire-bonding. Whether it is a single chip package or a multi-chip package gradiometer, its external pads can be connected to ASIC (Application Specific Integrated Circuit) or lead frame on the package leads.
  • ASIC Application Specific Integrated Circuit

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Abstract

本发明公开了一种磁电阻磁场梯度传感器，它包括基片、分别设置在基片上的磁电阻电桥和永磁体，所述磁电阻电桥包括两个或两个以上的磁电阻臂，所述磁电阻臂由一个或多个磁电阻元件构成，该磁电阻元件具有磁性钉扎层，且所有磁电阻元件的磁性钉扎层的磁矩方向相同，所述永磁体设置在每个磁电阻臂的附近用于提供偏置场并使磁电阻元件的响应曲线的偏移归零，该磁电阻磁场梯度传感器的焊盘可以通过引线连接到ASIC或引线框的封装引脚上。

Description

磁电阻磁场梯度传感器
技术领域
本发明涉及一种磁电阻磁场梯度传感器，尤其是一种采用 MTJ 磁电阻作为敏感元件的磁场梯度传感器。
背景技术
磁传感器广泛用于现代电子系统中，以感应磁场强度，来测量电流、位置、方向等物理参数。在现有技术中，有许多不同类型的传感器用于测量磁场和其他参数，例如采用霍尔元件，各向异性磁电阻（ AMR ）或巨磁电阻（ GMR ）作为敏感元件的磁传感器。
以霍尔元件作为敏感元件的磁传感器灵敏度非常低，通常使用聚磁环结构来放大磁场，提高霍尔输出灵敏度，从而增加了传感器的体积和重量，同时霍尔元件具有功耗大，线性度差的缺陷。 AMR 元件虽然灵敏度比霍尔元件高很多，但是其线性范围窄，同时以 AMR 作为敏感元件的磁传感器需要设置 set/reset 线圈对其进行预设 - 复位操作，造成其制造工艺的复杂，线圈结构的设置在增加尺寸的同时也增加了功耗。以 GMR 元件作为敏感元件的磁传感器较之霍尔传感器有更高的灵敏度，但是其线性范围偏低，同时， GMR 元件的响应曲线呈偶对称，只能测量单极性的磁场梯度，不能测量双极性磁场梯度。
隧道结磁电阻（ MTJ, Magnetic Tunnel Junction ）元件是近年来开始工业应用的新型磁电阻效应传感器，其利用的是磁性多层膜材料的隧道磁电阻（ TMR, Tunnel Magnetoresistance ）效应对磁场进行感应，比之前所发现并实际应用的 AMR 元件和 GMR 元件具有更大的电阻变化率。 MTJ 元件相对于霍尔元件具有更好的温度稳定性，更高的灵敏度，更低的功耗，更好的线性度，不需要额外的聚磁环结构；相对于 AMR 元件具有更好的温度稳定性，更高的灵敏度，更宽的线性范围，不需要额外的 set/reset 线圈结构；相对于 GMR 元件具有更好的温度稳定性，更高的灵敏度，更低的功耗，更宽的线性范围。
虽然 MTJ 元件具有极高的灵敏度，但是以 MTJ 元件作为敏感元件的磁传感器在微弱磁场探测时会受到外界磁场的干扰，同时高灵敏度的 MTJ 传感器并没有实现低成本大规模生产，特别是传感器的成品率取决于 MTJ 元件磁阻输出的偏移值，构成电桥的 MTJ 元件的磁阻很难达到高的匹配度，同时 MTJ 传感器在同一半导体基片上集成的制造工艺非常复杂。
发明内容
针对上述问题，本发明目的是提供一种以 MTJ 元件作为敏感元件的磁场梯度传感器，具有抗外磁场干扰能力强，磁场共模抑制比高，灵敏度高，线性范围宽，功耗低，体积小，温度特性好的优点。
为达到上述目的，本发明提供一种磁电阻磁场梯度传感器，它包括基片、分别设置在基片上的磁电阻电桥和永磁体，磁电阻电桥包括两个或两个以上的磁电阻臂，磁电阻臂由一个或多个磁电阻元件构成，该磁电阻元件具有磁性钉扎层，且所有磁电阻元件的磁性钉扎层的磁矩方向相同，永磁体设置在每个磁电阻臂的附近用于提供偏置场并使磁电阻元件的响应曲线的偏移归零。该磁电阻磁场梯度传感器的焊盘能够通过引线连接到 ASIC 或引线框的封装引脚上。
优选地，磁电阻元件为 MTJ 元件。
优选地，磁电阻元件的形状具有各向异性。
优选地，磁电阻元件在同一基片上采用同一工序制备，具有相同的形状和电阻值。
优选地，磁电阻电桥为梯度半桥。
优选地，磁电阻电桥为惠斯通全桥，惠斯通全桥的磁电阻桥臂的灵敏度方向相同，以检测空间的梯度磁场，惠斯通全桥结构中处于相对位置的桥臂电阻处于梯度磁场的同一位置，惠斯通全桥结构中处于相邻位置的桥臂电阻处于梯度磁场的不同位置。
优选地，对永磁体充磁来调节该永磁体的磁化强度和方向，以调节磁电阻磁场梯度传感器的输出性能。
优选地，磁电阻磁场梯度传感器为单一芯片磁电阻磁场梯度传感器。
本发明采用以上结构，具有抗外磁场干扰能力强，磁场共模抑制比高，灵敏度高，线性范围宽，功耗低，体积小，温度特性好的优点。
附图说明
图 1 是隧道结磁电阻元件（ MTJ ）的示意图。
图 2 是适用于线性磁场测量的 MTJ 元件的磁阻变化响应图。
图 3 是多个 MTJ 元件串联而形成一个等效 MTJ 磁电阻 20 的示意图。
图 4 是 MTJ 元件 1 与片上永磁体 22 摆放位置示意图。
图 5 是图 4 所示的永磁体 22 和 MTJ 元件 1 的截面图，图中描绘了一组偏置磁体的磁感线分布图。
图 6 是通过设置永磁体 22 和敏感轴 23 的夹角来控制 MTJ 元件响应的偏移和饱和场强度的示意图。
图 7 是半桥型 MTJ 磁电阻梯度磁场传感器的结构示意图。
图 8 是半桥型 MTJ 磁电阻梯度磁场传感器的输出测量图。
图 9 是全桥型 MTJ 磁电阻梯度磁场传感器的原理示意图。
图 10 是全桥型 MTJ 磁电阻梯度磁场传感器的结构示意图。
图 11 是全桥型 MTJ 磁电阻梯度磁场传感器的输出测量图。
具体实施方式
图 1 是一 MTJ 多层膜元件的功能概念简图。 MTJ 元件 1 一般包括上层的铁磁层或人工反铁磁层（ Synthetic Antiferromagnetic, SAF ） 5 、下层的铁磁层或 SAF 层 3 、两个磁性层之间的隧道势垒层 4 。在这种结构中，上层的铁磁层（ SAF 层） 5 构成了磁性自由层，其磁矩方向 7 随外部磁场的改变而变化。下层的铁磁层（ SAF 层） 3 是一个固定的磁性层，因为其磁矩方向 8 被钉扎在一个方向，所以在一般条件下是不会改变的，通常铁磁层（ SAF 层） 3 也被称为被钉扎层。被钉扎层通常是在反铁磁层 2 的上方或下方沉积的铁磁层或 SAF 层。 MTJ 结构通常是沉积在导电的底电极层 9 的上方，同时 MTJ 结构的上方为顶电极层 6 。 MTJ 的底电极层 9 和顶电极层 6 之间的测量电阻值 12 代表自由层 5 和被钉扎层 3 的相对磁矩方向。当上层的铁磁层（ SAF 层） 5 的磁矩方向 7 与下层的铁磁层 3 的磁矩方向 8 平行时，整个元件的电阻 12 在低阻态。当上层的铁磁层（ SAF 层） 5 的磁矩方向与下层的铁磁层 3 的磁矩方向反平行时，整个元件的电阻 11 在高阻态。通过已知的技术， MTJ 元件 1 的电阻可随着外加磁场在高阻态和低阻态之间线性变化。
底电极层 9 和顶电极层 6 直接与相关的反铁磁层 2 和磁性自由层 5 电接触。电极层通常采用非磁性导电材料，能够携带电流输入欧姆计 34 。欧姆计 34 适用于已知的穿过整个隧道结的电流，并对电流（或电压）进行测量。通常情况下，隧道势垒层 4 提供了器件的大多数电阻，约为 1000 欧姆，而所有导体的阻值约为 10 欧姆。底电极层 9 位于绝缘基片 10 上方，绝缘基片 10 要比底电极层 9 要宽，其位于其他材料构成的底基片 11 的上方。底基片 11 的材料通常是硅、石英、耐热玻璃、 GaAs 、 AlTiC 或者是能够于晶圆集成的任何其他材料。硅由于其易于加工为集成电路（尽管磁性传感器不总是需要这种电路）成为最好的选择。
适合线性磁场测量的 GMR 或 MTJ 元件的响应图如图 2 所示。响应曲线 13 在低阻态 14 和高阻态 15 处饱和， RL 和 RH 分别代表低阻态和高阻态的阻值。响应曲线 13 在饱和场之间的区域是随外场（ H ） 19 线性变化的。外场 19 平行于传感元件的敏感轴 23 。被钉扎层 3 的磁矩方向 8 与敏感轴 23 反平行，意味着其指向 -H 的方向。当自由层 5 的磁矩方向 7 与被钉扎层 3 的磁矩方向 8 反平行时，磁电阻元件的响应曲线 13 为最大值 RH ，当两者平行时，为最小值 RL 。磁电阻响应曲线 13 的中间值随自由层 5 和被钉扎层 3 之间的角度的变化而变化。响应曲线 13 不是沿 H=0 的点对称的。饱和场 17 、 18 是沿着 HO 点 16 典型的偏移场，因此 RL 值对应的饱和场更接近 H=0 的点。 HO 值通常被称为'橘子皮效应（ Orange Peel ）'或'奈尔耦合（ Neel Coupling ）'场，其典型值为 1 到 40 Oe 。其与磁电阻元件中铁磁性薄膜的结构和平整度有关，依赖于材料和制造工艺。
如图 2 所示的响应曲线在饱和场 17 和 18 之间的区域的工作状态可以近似为方程：
Figure PCTCN2013071090-appb-I000001
(1)
其中， HS 是饱和场。 HS 被定量地定义为线性区域的切线与正负饱和曲线的切线的交点对应的值，该值是在响应曲线相对于 HO 点的不对称性消除的情况下所取的。
图 2 所示的是在理想情况下的响应曲线 13 。在理想状态下，磁电阻 R 随外场 H 的变化是完美的线性关系，同时没有磁滞（在实际情况下，磁电阻的响应曲线随外场变化具有滞后的现象，我们称之为磁滞。磁电阻的响应曲线为一个回路，通常作为应用的磁电阻材料的磁滞很小，在实际使用中可以看做一个完美的线性曲线）。在实际应用的传感器领域，由于磁传感设计的制约以及材料的缺陷，这条曲线 13 会更弯曲。
由于尺寸小， MTJ 元件 1 能够连接成一等效的 MTJ 磁电阻 20 以增加灵敏度，噪声减少至 1/F （ F 为串联的 MTJ 元件 1 的个数），同时可以提高其 ESD 性能，其实施方式参见图 3 所示。这些 MTJ 元件串 20 被用来作为更为复杂的电路结构的磁电阻臂。 MTJ 元件 1 在底电极层 9 和顶电极层 6 中间，形成三明治结构，内部的电流 21 垂直通过 MTJ 元件 1 水平方向交替流过顶电极层 6 和底电极层 9 。底电极层 9 在绝缘层 10 的上方，而绝缘层 10 位于底基片 11 上。在每个元件串的末端是焊盘，也就是电阻臂和其他元件或欧姆表 34 连接的地方或者可以通过其和芯片上其他电路的部件连接而没有任何其他的连接方式。在通常情况下电流流动的方向并不对磁电阻臂 20 的有效阻值产生影响，磁电阻臂 20 的电阻值可以根据 MTJ 元件 1 的个数设置和调整。
电桥用来将磁电阻传感器的电阻值变化转化为电压信号，使其输出电压便于被放大。这可以改变信号的噪声，取消共模信号，减少温漂或其他的不足。上述的 MTJ 元件串 20 可以连接构成电桥。
如图 4 所示， MTJ 元件 1 安置在两个永磁体 22 之间。永磁体 22 之间具有间隙（ Gap ） 38 ，宽度（ W ） 39 ，厚度（ t ） 40 和长度（ Ly ） 41 。永磁体 22 被设计为提供一个垂直于梯度计敏感轴 23 的偏置场 Hcross27 。通过施加一个大磁场对永磁体 22 充磁，最终永磁体 22 周围的磁场分布 43 如图 5 所示。
永磁体 22 的磁场被认为是在如图 6 所示的磁体的边缘 35 之间形成的磁荷和磁矩边界条件作用的结果。磁荷大小随着剩磁 Mr 的大小和方向θ 37 进行变化，并且与永磁体的倾斜角 θ sns 44 相关：
Figure PCTCN2013071090-appb-I000002
(2)
磁荷产生的磁场为：
Figure PCTCN2013071090-appb-I000003
(3)
当θ mag = θ ref = π /2 时， MTJ 元件 1 的中心磁场强度为剩磁 Mr 的函数：
Figure PCTCN2013071090-appb-I000004
(4)
公式 (4) 是图 4 所示的 W39 和 Gap38 的函数，该函数表示可以通过改变永磁体 22 的形状维度以及方向来改变永磁体在 MTJ 元件位置产生的磁场，进而改变 MTJ 元件 1 的饱和场。
沿垂直于 MTJ 元件的灵敏度方向 23 ，永磁体 22 为 MTJ 元件所加的磁场为
Figure PCTCN2013071090-appb-I000005
（ 5 ）
沿 MTJ 元件的灵敏度方向 23 ，永磁体 22 所加的磁场为
Figure PCTCN2013071090-appb-I000006
(6)
从以上可以看出，可以通过调节永磁体的厚度、形状和角度θ mag ，从而改变 Hoff ，用以补偿 MTJ 元件本身的奈耳耦合场 Ho ，以使输出特性更易于应用并获得更好的性能。另一方面，也可以调节 Hcross ，从而改变 MTJ 元件输出特性的饱和场，并相应的调节其灵敏度。
通过设置永磁体 22 和敏感轴的方向 23 的夹角θ mag 37 ，可以同时产生 Hcross27 和偏移场 Hoff26 ，可以设定 MTJ 元件的饱和场，同时消除奈尔耦合偏移，使 MTJ 元件的响应曲线归零，该方法是为了优化电桥输出的对称性、奈尔偏移和灵敏度。此外，设置剩磁 Mr 和敏感轴的方向 23 的夹角θ mag 37 是为了在梯度计芯片制备以后，可以提供一个微调装置，能够最小化偏移值或对称性，这种方法可以提高产品优率。
MTJ 元件 1 的形状通常具有各向异性以提供形状各向异性能，并等效于一等效各向异性场 Hk 。常用的形状为长椭圆，长矩形，长菱形等。对于 MTJ 元件 1 ，其饱和场 Hs 为：
Figure PCTCN2013071090-appb-I000007
(7)
单个 MTJ 元件的磁电阻响应方程为公式（ 1 ）所示，则其灵敏度为：
Figure PCTCN2013071090-appb-I000008
(8)
即可以通过改变永磁体和 MTJ 元件的形状来改变 MTJ 元件的响应特性。
图 7 是半桥型 MTJ 梯度磁场传感器的结构示意图。如图 7 所示，相同敏感方向放置的 MTJ 磁电阻 R1 、 R2 构成一半桥，磁电阻在基片 10 、 11 上制备且具有基片上的电触点，可通过其实现电联。目前有很多种方式连接磁电阻和电桥的外接焊盘。典型的连接结构包括：芯片集成连接、引线键合以及焊球连接。 MTJ 磁电阻 20 周围是倾斜设置的永磁体 22 ，在焊盘 28 和焊盘 29 两端输入稳恒电压 Vbias ，外场 H 顺着敏感轴的方向 23 呈梯度变化，沿着磁感线方向，不同位置的两个 MTJ 磁电阻 R1 和 R2 的阻值变化不同，箭头 8 代表两个 MTJ 磁电阻 20 、被钉扎层 3 的磁矩方向，焊盘 30 为输出端 VOUT 。通常情况下在同一基片上制备的 MTJ 磁电阻 20 的阻值近乎相同，不可能完全相同，存在一定的差异，两个 MTJ 磁电阻的阻值分别用 R1 和 R2 代替，其所处的磁场场强分别为 H1 和 H2 ，而 H1 和 H2 可分解为：
Figure PCTCN2013071090-appb-I000009
,
Figure PCTCN2013071090-appb-I000010
(9)
其中，
Figure PCTCN2013071090-appb-I000011
,
Figure PCTCN2013071090-appb-I000012
,(10)
其中 HCM ， HdM 分别称为共模外磁场和差模外磁场。
在理想情况下， R1=R2 ， SR1=SR2 ，即 MTJ 磁电阻 R1 和 R2 的一致性相同，给半桥加一电压 Vbias ，则对于共模磁场 HCM ，半桥输出端 VOUT 30 的电压为：
Figure PCTCN2013071090-appb-I000013
(11)
取 Vbias = 1V ，则其共模磁场灵敏度 SCM = dV1/dHCM =0
其输出不随 HCM 变化，即梯度半桥对外场不敏感，可以防止外磁场的干扰。
对于差模磁场 HCM ，则有：
Figure PCTCN2013071090-appb-I000014
, (12)
理想情况下， R1=R2 ， SR1=SR2 ，则有：
Figure PCTCN2013071090-appb-I000015
(13)
可以看出，该半桥梯度计对的输出随差模外磁场 HdM 的变化而变化，取 Vbias=1V ，则其灵敏度为：
Figure PCTCN2013071090-appb-I000016
(14)
由上式可以看出，梯度半桥只对差模磁场产生响应，并输出信号，同时具有良好的抗外场干扰能力，梯度半桥的典型输出的测量结果如图 8 所示，其中与普通半桥不同的是，横轴为梯度磁场，磁场是一个梯度场，顺着磁感线方向磁场的强度是衰减的，位于梯度磁场不同位置的磁电阻（如 R1 和 R2 ）的外场强度 H1 和 H2 是不同的。
由于 R1 和 R2 存在微小差异，同时 SR1 和 SR2 存在微小差异，使得实际应用当中的梯度半桥传感器对共模磁场 HCM 存在一定的响应，但其对共模磁场的响应灵敏度远低于差模磁场，其对外场的干扰的能力可用共模抑制比 CMRR 表示：
Figure PCTCN2013071090-appb-I000017
(15)
根据工艺能力，通常可达 40dB 或以上。
图 9 是全桥型 MTJ 梯度磁场传感器的概念图，而图 10 是全桥型 MTJ 梯度磁场传感器的结构示意图。如图 9 所示，敏感方向相同的 MTJ 磁电阻 R1 、 R2 、 R3 、 R4 构成一全桥，磁电阻在基片 10 、 11 上制备且具有基片上的电触点，可通过其实现电联。目前有很多种方式连接磁电阻和电桥的外接焊盘。典型的连接结构包括：芯片集成连接、引线键合以及焊球连接。如图 10 所示，惠斯通全桥结构中处于相对位置的桥臂电阻 R1 和 R4 处于梯度磁场的同一位置，惠斯通全桥结构中处于相对位置的 R2 和 R3 处于梯度磁场同一位置，所有桥臂电阻的灵敏度方向相同， MTJ 磁电阻 20 周围是倾斜设置的永磁体 22 ，在焊盘 28 和焊盘 29 两端输入稳恒电压 Vbias ，外场 H 顺着敏感轴 23 的方向呈梯度变化，沿着磁感线方向不同位置两个 MTJ 磁电阻 R1 和 R2 （ R3 和 R4 ）的阻值变化不同，箭头 8 代表四个 MTJ 磁电阻 20 的被钉扎层 3 的磁矩方向，输出端焊盘 32 和 33 之间的电压差（ V2-V1 ）为输出电压 VOUT 。
在理想情况下，梯度全桥的 VOUT 对共模磁场 HdM 没有响应，对于差模磁场，则有：
Figure PCTCN2013071090-appb-I000018
(16)
Figure PCTCN2013071090-appb-I000019
(17)
理想情况下， R1=R2=R3=R4 ， SR1=SR2=SR3=SR4=S R 则有：
Figure PCTCN2013071090-appb-I000020
(18)
其中， R 为 MTJ 磁电阻 20 的阻值， SR 为 MTJ 磁电阻 20 的灵敏度。可以看出全桥型梯度计与半桥型梯度计具有相同的抑制共模外场干扰能力，同时其输出灵敏度为半桥型梯度计的两倍，梯度全桥的典型输出测量结果如图 11 所示。
上述的半桥和全桥型梯度计可以在同一基片上采用相同的工艺一次性制备而成，我们通常称之为单一芯片磁电阻磁场梯度传感器。也可以采用不同芯片封装，在同一基片上采用相同的工艺制备 n 个磁电阻，然后将单个磁电阻芯片切割加工之后通过引线连接磁电阻的电触点实现电连，构成半桥或全桥结构。无论是单一芯片封装还是多芯片封装的梯度计，其外接焊盘可以连接到 ASIC （ Application Specific Integrated Circuit, 专用集成电路）或引线框的封装引脚上。
以上对本发明的特定实施例结合图示进行了说明，很明显，在不离开本发明保护的范围和精神的基础上，可以对现有技术和工艺进行很多修改。在本发明的所属技术领域中，只要掌握通常知识，就可以在本发明的技术要旨范围内，进行多种多样的变更。

Claims (8)

1. 一种磁电阻磁场梯度传感器，其特征在于：它包括基片、分别设置在基片上的磁电阻电桥和永磁体，所述磁电阻电桥包括两个或两个以上的磁电阻臂，所述磁电阻臂由一个或多个磁电阻元件构成，该磁电阻元件具有磁性钉扎层，且所有磁电阻元件的磁性钉扎层的磁矩方向相同，所述永磁体设置在每个磁电阻臂的附近用于提供偏置场，并使磁电阻元件的响应曲线的偏移归零，该磁电阻磁场梯度传感器的焊盘能够通过引线连接到 ASIC 或引线框的封装引脚上。
2. 根据权利要求1 所述的磁电阻磁场梯度传感器，其特征在于：所述磁电阻元件为 MTJ 元件。
3. 根据权利要求 2 所述的磁电阻磁场梯度传感器，其特征在于：所述的磁电阻元件的形状具有各向异性。
4. 如权利要求 3 所述的磁电阻磁场梯度传感器，其特征在于：所述磁电阻元件在同一基片上采用同一工序制备，具有相同的形状和电阻值。
5. 根据权利要求 1 所述的磁电阻磁场梯度传感器，其特征在于：所述磁电阻电桥为梯度半桥。
6. 根据权利要求 1 所述的磁电阻磁场梯度传感器，其特征在于：所述磁电阻电桥为惠斯通全桥，惠斯通全桥的磁电阻桥臂的灵敏度方向相同，以检测空间的梯度磁场，惠斯通全桥结构中处于相对位置的桥臂电阻处于梯度磁场的同一位置，惠斯通全桥结构中处于相邻位置的桥臂电阻处于梯度磁场的不同位置。
7. 根据权利要求 1 所述的磁电阻磁场梯度传感器，其特征在于：对永磁体充磁来调节该永磁体的磁化强度和方向，以调节磁电阻磁场梯度传感器的输出性能。
8. 根据权利要求 1 所述的磁电阻磁场梯度传感器，其特征在于：该磁电阻磁场梯度传感器为单一芯片磁电阻磁场梯度传感器。
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