WO2013114152A1 - Dispositifs photoactifs à distribution améliorée des porteurs de charges, ainsi que leur procédé de formation. - Google Patents

Dispositifs photoactifs à distribution améliorée des porteurs de charges, ainsi que leur procédé de formation. Download PDF

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Publication number
WO2013114152A1
WO2013114152A1 PCT/IB2012/002790 IB2012002790W WO2013114152A1 WO 2013114152 A1 WO2013114152 A1 WO 2013114152A1 IB 2012002790 W IB2012002790 W IB 2012002790W WO 2013114152 A1 WO2013114152 A1 WO 2013114152A1
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Prior art keywords
quantum well
region
well region
barrier
semiconductor material
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PCT/IB2012/002790
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English (en)
Inventor
Chantal Arena
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Soitec
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Publication date
Priority claimed from US13/362,866 external-priority patent/US8471243B1/en
Priority claimed from FR1251158A external-priority patent/FR2986661B1/fr
Application filed by Soitec filed Critical Soitec
Priority to DE112012005796.1T priority Critical patent/DE112012005796T5/de
Priority to CN201280068513.5A priority patent/CN104094419A/zh
Priority to KR1020147021211A priority patent/KR20140119714A/ko
Priority to JP2014553817A priority patent/JP6155478B2/ja
Publication of WO2013114152A1 publication Critical patent/WO2013114152A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Definitions

  • Embodiments of the present invention generally relate to photoactive devices comprising III-V semiconductor materials, and to methods of forming such photoactive devices.
  • Photoactive devices are devices that are configured to convert electrical energy into electromagnetic radiation, or to convert electromagnetic radiation into electrical energy.
  • Photoactive devices include, but are not limited to, light-emitting diodes (LEDs), semiconductor lasers, photodetectors, and solar cells.
  • LEDs light-emitting diodes
  • Such photoactive devices often include one or more planar layers of III-V semiconductor material.
  • III-V semiconductor materials are materials that are predominantly comprised of one or more elements from group II IA of the periodic table (B, Al, Ga, In, and Tl) and one or more elements from group VA of the periodic table (N, P, As, Sb, and Bi).
  • the planar layers of III-V semiconductor material may be crystalline, and may comprise a single crystal of the III-V semiconductor material.
  • Layers of crystalline III-V semiconductor material generally include some quantity of defects within the crystal lattice of the III-V semiconductor material. These defects in the crystal structure may include, for example, point defects and line defects (e.g., threading dislocations). Such defects are detrimental to the performance of photoactive devices fabricated on or in the layer of III-V semiconductor material.
  • stress within the layer of III-V semiconductor material may increase until, at some critical thickness, defects, such as dislocations, become energetically favorable and form within the layer of III-V semiconductor material to alleviate the building stress therein.
  • Photoactive devices may comprise an active region that includes a number of quantum well regions, each of which may comprise a layer of III-V semiconductor material.
  • the quantum well regions may be separated from one another by barrier regions, which also may comprise a layer of III-V semiconductor material, but of different composition relative to the quantum well regions.
  • the present invention includes radiation-emitting semiconductor devices that comprise a first base region comprising an n-type III-V semiconductor material, a second base region comprising a p-type III-V semiconductor material, and a
  • the multi-quantum well structure disposed between the first base region and the second base region.
  • the multi-quantum well structure includes at least three quantum well regions and at least two barrier regions.
  • a first barrier region of the at least two barrier regions is disposed between a first quantum well region and a second quantum well region of the at least three quantum well regions.
  • a second barrier region of the at least two barrier regions is disposed between the second quantum well region and the third quantum well region of the at least three quantum well regions.
  • the first quantum well region is located closer to the first base region than the third quantum well region
  • the third quantum well region is located closer to the second base region than the third quantum well region.
  • Each of the first quantum well region, the second quantum well region, and the third quantum well region has a well region thickness in a direction extending between the first base region and the second base region of at least about two (2) nanometers, and each of the first barrier region and the second barrier region has a barrier region thickness in the direction extending between the first base region and the second base region greater than or equal to each of the well region thicknesses. Also, an electron hole energy barrier between the third quantum well region and the second quantum well region is less than an electron hole energy barrier between the second quantum well region and the first quantum well region.
  • the present invention comprises devices that include at least one light-emitting diode (LED).
  • the LED includes a first base region comprising an n-type III-V semiconductor material, a second base region comprising a p-type III-V semiconductor material, and a multi-quantum well structure disposed between the first base region and the second base region.
  • the multi-quantum well structure comprises at least three quantum well regions and at least two barrier regions. A first barrier region of the at least two barrier regions is disposed between a first quantum well region and a second quantum well region of the at least three quantum well regions, and a second barrier region of the at least two barrier regions is disposed between the second quantum well region and the third quantum well region of the at least three quantum well regions.
  • the first quantum well region is located closer to the first base region than the third quantum well region
  • the third quantum well region is located closer to the second base region than the third quantum well region.
  • Each of the first quantum well region, the second quantum well region, and the third quantum well region comprises In x Gai_ x N and has a well region thickness in a direction extending between the first base region and the second base region of at least about two (2) nanometers.
  • Each of the first barrier region and the second barrier region comprises In y Gai -y N, wherein y is at least about 0.05, and has a barrier region thickness in the direction extending between the first base region and the second base region greater than or equal to each of the well region thicknesses and at least about two nanometers (2).
  • the present invention includes methods of forming radiation-emitting devices.
  • a plurality of III-V semiconductor material volumes may be sequentially epitaxially deposited over a substrate to form a
  • multi-quantum well structure comprising a first barrier region disposed between a first quantum well region and a second quantum well region, and a second barrier region disposed between the second quantum well region and a third quantum well region.
  • Each of the first quantum well region, the second quantum well region, and the third quantum well region may be formed to have a well region thickness of at least about two (2) nanometers.
  • Each of the first barrier region and the second barrier region may be formed to have a barrier region thickness greater than or equal to each of the well region thicknesses.
  • composition of each of the first quantum well region, the second quantum well region, and the third quantum well region may be selected such that an electron hole energy barrier between the third quantum well region and the second quantum well region is less than an electron hole energy barrier between the second quantum well region and the first quantum well region.
  • the present invention includes methods of forming radiation-emitting devices.
  • a plurality of openings are formed that extend through a layer of strained semiconductor material over a strain relaxation layer.
  • the strained semiconductor material and the strain relaxation layer are thermally treated to cause deformation of the strain relaxation layer and relaxation of the strained semiconductor material to form at least one volume of relaxed semiconductor material.
  • a plurality of III-V semiconductor material volumes are sequentially epitaxially deposited over the at least one volume of relaxed semiconductor material to form a multi-quantum well structure comprising a first barrier region disposed between a first quantum well region and a second quantum well region, and a second barrier region disposed between the second quantum well region and a third quantum well region.
  • Each of the first quantum well region, the second quantum well region, and the third quantum well region are formed to have a well region thickness of at least about two (2) nanometers.
  • Each of the first barrier region and the second barrier region are formed to have a barrier region thickness greater than or equal to each of the well region thicknesses.
  • Compositions of each of the first quantum well region, the second quantum well region, and the third quantum well region are selected such that an electron hole energy barrier between the third quantum well region and the second quantum well region is less than an electron hole energy barrier between the second quantum well region and the first quantum well region.
  • FIG. 1 is a simplified cross-sectional view of a radiation-emitting semiconductor device and a corresponding energy band diagram for the device;
  • FIG. 2 through FIG. 5 are used to illustrate a method for forming a
  • FIG. 2 is a simplified cross-sectional view of a layer of strained semiconductor material over a strain relaxation layer on a base substrate;
  • FIG. 3 is a simplified cross-sectional like that of FIG. 2 illustrating a plurality of openings extending through the layer of strained semiconductor material
  • FIG. 4 is a simplified cross-sectional view like those of FIGS. 2 and 3 illustrating volumes of relaxed semiconductor material formed by relaxing the strained semiconductor material with the assistance of the strain relaxation layer;
  • FIG. 5 is a simplified cross-sectional view of a radiation emitting semiconductor device disposed on a volume of relaxed semiconductor material like those shown in FIG. 4.
  • III-V semiconductor material means and includes any material predominantly comprised of one or more elements from group IIIA of the periodic table (B, Al, Ga, In, and Tl) and one or more elements from group VA of the periodic table (N, P, As, Sb, and Bi).
  • critical thickness when used with respect to a material, means the maximum thickness above which the formation of defects, such as dislocations, within the material becomes energetically favorable.
  • epi layer of material means a layer of material that is at least substantially a single crystal of the material and that has been formed such that the single crystal exhibits a known crystallographic orientation.
  • growth lattice parameter when used with respect to an epitaxial layer of semiconductor material, means an average lattice parameter exhibited by the layer of semiconductor material as the layer of semiconductor material is epitaxially grown at an elevated temperature.
  • the term “lattice strain,” when used with respect to a layer of material, means strain of the crystal lattice in directions at least substantially parallel to the plane of the layer of material and may be compressive strain or tensile strain.
  • the term “average lattice parameter,” when used with respect to a layer of material, means the average lattice parameters in dimensions at least substantially parallel to the plane of the layer of material.
  • the term "strained” is used to indicate that the crystal lattice has been deformed (e.g., stretched or compressed) from the normal spacing for such material so that its lattice spacing is different than what would normally be encountered for such material in a homogeneous relaxed crystal.
  • Embodiments of the present disclosure include photoactive devices, such as radiation-emitting structures (e.g., LEDs), which include a multi-quantum well structure having an energy band structure that is tailored to provide an improved distribution of electron holes across the multi-quantum well structure during operation of the photoactive device.
  • radiation-emitting structures e.g., LEDs
  • multi-quantum well structure having an energy band structure that is tailored to provide an improved distribution of electron holes across the multi-quantum well structure during operation of the photoactive device.
  • FIG. 1 illustrates an example embodiment of a radiation-emitting semiconductor device 100 of the present disclosure.
  • the semiconductor device 100 may comprise an LED, for example.
  • a simplified energy band diagram exhibited by the semiconductor device 100 is shown over the semiconductor device 100 in FIG. 1. The different regions within the energy band structure are respectively aligned with the regions of the semiconductor device 100 to which they correspond.
  • the radiation-emitting semiconductor device 100 includes a first base region 102, a second base region 104, and a multi-quantum well structure 106 disposed between the first base region 102 and the second base region 104.
  • the multi-quantum well structure 106 includes at least three quantum well regions.
  • the semiconductor device 100 includes a first quantum well region 108, a second quantum well region 1 10, a third quantum well region 1 12, and a fourth quantum well region 1 14.
  • the radiation-emitting semiconductor device 100 may include only three quantum well regions or more than four quantum well regions.
  • Each of the quantum well regions 108-1 14 has a respective well region thickness 115 in a direction extending between the first base region 102 and the second base region 104.
  • the respective well region thicknesses 1 15 of the quantum well regions 108-1 14 may be the same or different.
  • each of the respective well region thicknesses 1 15 may be about two (2) nanometers or more, about five (5) nanometers or more, about ten (10) nanometers or more, or even about twenty (20) nanometers or more.
  • the first quantum well region 108 is located proximate the first base region 102, and the fourth quantum well region 1 14 is located proximate the second base region 104.
  • the first quantum well region 108 is located closer to the first base region 102 than the second quantum well region 1 10, which is located closer to the first base region 102 than the third quantum well region 1 12, which is located closer to the first base region 102 than the fourth quantum well region 1 14.
  • the fourth quantum well region 1 14 is located closer to the second base region 104 than the third quantum well region 1 12, which is located closer to the second base region 104 than the second quantum well region 1 10, which is located closer to the second base region 104 than the first quantum well region 108.
  • a barrier region may be disposed between adjacent quantum well regions 108-1 14.
  • a first barrier region 1 16 is disposed between the first quantum well region 108 and the second quantum well region 1
  • a second barrier region 1 18 is disposed between the second quantum well region 1 10 and the third quantum well region 1
  • a third barrier region 120 is disposed between the third quantum well region 1 12 and the fourth quantum well region 1 14.
  • Each of the barrier regions 1 16-120 has a respective barrier region thickness 121 in a direction extending between the first base region 102 and the second base region 104.
  • the respective barrier region thicknesses 121 of the barrier regions 1 16-120 may be the same or different.
  • Each of the respective barrier region thicknesses 121 may be greater than or equal to the well region thicknesses 1 15 to prevent tunneling of electrons through the barrier regions 1 16-120 between the quantum well regions 108-1 14.
  • each of the respective barrier region thicknesses 121 may be about two (2) nanometers or more, about five (5) nanometers or more, about ten ( 10) nanometers or more, about fifteen (15) nanometers or more, or even about twenty (20) nanometers or more.
  • the multi-quantum well structure 106 may have a total structure thickness 122 in the direction extending between the first base region 102 and the second base region 104 of, for example, about ten (10) nanometers or more, about twenty (20) nanometers or more, about fifty (50) nanometers or more, about eighty five (85) nanometers or more, or even about one hundred and forty (140) nanometers or more.
  • the first base region 102 may comprise an n-type semiconductor material
  • the second base region 104 may comprise a p-type semiconductor material.
  • each of the first base region 102 and the second base region 104 may comprise a III-V semiconductor material, such ln z Ga].
  • z N wherein z is between about 0.02 and about 0.17.
  • the first base region 102 may be an intrinsic or doped n-type III-V semiconductor material
  • the second base region 104 may be an intrinsic or doped p-type semiconductor material.
  • the first base region 102 may be electrically and structurally coupled to a first conductive contact 142
  • the second base region 104 may be electrically and structurally coupled to a second conductive contact 144.
  • Each of the first conductive contact 142 and the second conductive contact 144 may comprise, for example, one or more metals (e.g., aluminum, titanium, platinum, nickel gold, etc.) or metal alloys, and may comprise a number of layers of such metals or metal alloys.
  • the first conductive contact 142 and/or the second conductive contact 144 may comprise a doped or intrinsic n-type or p-type semiconductor material, respectively.
  • Metals and metal alloys may not be transparent to a wavelength or wavelengths of electromagnetic radiation generated within the multi-quantum well structure 106 during operation of the semiconductor device 100.
  • the second conductive contact 144 may not cover the entire surface of the second base region 104.
  • the second conductive contact 144 may be patterned such that one or more apertures extend through the second conductive contact 144. In this configuration, radiation generated within the multi-quantum well structure 106 to be transmitted out from the semiconductor device 100 through the second base region 104 and past the second conductive contact 144.
  • the first conductive contact 142 could be patterned as described with reference to the second conductive contact 144.
  • the first conductive contact 142 and the first base region 102 may supply the multi-quantum well structure 106 with electrons 146.
  • the second conductive contact 144 and the second base region 104 may supply the multi-quantum well structure 106 with electron holes 148.
  • the electrons 146 may exhibit a higher mobility within the multi-quantum well structure 106 relative to the electron holes 148.
  • the electron holes 148 may be more unevenly distributed across the multi-quantum well structure 106 and may be more highly concentrated in the quantum well regions nearest to the second base region 104. Such an uneven distribution of electron holes 148 across the multi-quantum well structure 106 increases the probability of undesirable, non-radiant Auger recombination of electron 146 and electron hole 148 pairs.
  • the multi-quantum well structure 106 of embodiments of the present disclosure has an energy band structure that is tailored to provide an improved distribution of electron holes 148 across the multi-quantum well structure 106 during operation of the semiconductor device 100.
  • the quantum well regions 108- 1 14 may have a material composition and structural configuration selected to provide each of the quantum well regions 108-1 14 with a bandgap energy 132.
  • the bandgap energy 132 is at least substantially equal in the different quantum well regions 108-1 14.
  • a bandgap energy 132 of one or more of the quantum well regions 108-1 14 may differ from a bandgap energy of another of the quantum well regions 108-1 14.
  • the barrier regions 1 16-120 may have a material composition and structural configuration selected to provide each of the barrier regions 1 16-120 with respective bandgap energies 124- 128.
  • the bandgap energy 124 in the first barrier region 1 16 may be greater than the bandgap energy 126 in the second barrier region 1 18, and the bandgap energy 126 in the second barrier region 1 18 may be greater than the bandgap energy 128 in the third barrier region 120, as shown in the energy band diagram of FIG. 1. Further, each of the bandgap energies 132 of the quantum well regions 108-1 14 may be less than each of the bandgap energies 124- 128 of the barrier regions 1 16-120.
  • an electron hole energy barrier 136 between the fourth quantum well 1 14 and the third quantum well 1 12 may be less than an electron hole energy barrier 138 between the third quantum well 1 12 and the second quantum well 1 10, and an electron hole energy barrier 138 between the third quantum well 1 12 and the second quantum well 1 10 may be less than an electron hole energy barrier 140 between the second quantum well 1 10 and the first quantum well 108.
  • the electron hole energy barriers 136-140 across the barrier regions 1 16-120 may increase in a step-wise manner across the multi-quantum well structure 106 in the direction extending from the second base region 104 (which supplies electron holes 148 to the multi-quantiim well structure 106) to the first base region 102.
  • the electron hole energy barriers 136- 140 are the differences in the energies of the valence band across the interfaces between the quantum well regions 108- 1 14 and the adjacent barrier regions 1 16-120. As a result of the increasing electron hole energy barriers 136-140 across the barrier regions 1 16-120 moving from the second base region 104 toward the first base region 102, a more even distribution of electron holes 148 may be achieved within the multi-quantum well structure 106, which may result in improved efficiency during operation of the radiation-emitting semiconductor device 100.
  • the barrier regions 1 16-120 may have a material composition and structural configuration selected to provide each of the barrier regions 1 16-120 with their different, respective bandgap energies 124-128.
  • each of the barrier regions 1 16- 120 may comprise a ternary Ill-nitride material, such as In y Gai_ y N, wherein y is at least about 0.05.
  • Increasing the indium content (i.e., increasing the value of y) in the In y Gai. y N of the barrier regions 1 16-120 may decrease the bandgap energy of the barrier regions 1 16-120.
  • the second barrier region 1 18 may have a higher indium content relative to the first barrier region 1 16, and the third barrier region 120 may have a higher indium content relative to the second barrier region 1 18.
  • the first barrier region 1 16 may comprise as In y Gai. y N, wherein y is between about 0.05 and about 0.15
  • the second barrier region 1 18 may comprise In y Gai -y N, wherein y is between about 0.10 and about 0.20
  • the third barrier region 120 may comprise In y Gai -y N, wherein y is between about 0.15 and about 0.25.
  • the quantum well regions 108- 1 14 also may comprise a ternary Ill-nitride material, such as In x Gai. x N, wherein x may be at least about 0.12, or even about 0.17 or more.
  • the quantum well regions 108-1 14 and the barrier regions 1 16-120 described above may comprise a generally planar layer of III-V semiconductor material (e.g., ternary Ill-nitride material, such as indium gallium nitride (InGaN)).
  • III-V semiconductor material e.g., ternary Ill-nitride material, such as indium gallium nitride (InGaN)
  • the layers of III-V semiconductor material may be crystalline, and may comprise a single crystal of the III-V semiconductor material.
  • layers of crystalline III-V semiconductor material generally include some quantity of defects within the crystal lattice of the III-V semiconductor material. These defects in the crystal structure may include, for example, point defects and line defects (e.g., threading dislocations). Such defects are detrimental to the performance of photoactive devices comprising the layers of III-V semiconductor material.
  • the layers of crystalline III-V semiconductor material may be fabricated by epitaxially growing the layers of III-V semiconductor material on the surface of an underlying substrate, which has a crystal lattice similar to, but slightly different from the crystal lattice of the crystalline III-V semiconductor material.
  • the crystal lattice of the crystalline III-V semiconductor material may be mechanically strained.
  • indium gallium nitride InGaN
  • the critical thickness of the layers of indium gallium nitride decreases with increasing indium content.
  • recently developed methods may be used to fabricate a multi-quantum well structure 106 including quantum well regions 108- 1 14 and barrier regions 1 16-120 of a ternary Ill-nitride material, such as indium gallium nitride, as described hereinabove.
  • Non-limiting examples of methods that may be used to fabricate a multi-quantum well structure 106 of a radiation-emitting semiconductor device 100 as described herein are described below with reference to FIGS. 2 through 5.
  • a substrate 152 may be provided that includes a layer of strained semiconductor material 158 over a base substrate 156 with a strain relaxation layer 154 disposed therebetween.
  • the base substrate 156 may comprise, for example, any one or more of sapphire, silicon carbide, silicon, and a metallic material (e.g., molybdenum, tantalum, etc.).
  • the strain relaxation layer 154 may comprise a material such as, for example, silicate glass,
  • the strained semiconductor material 158 ultimately may be used as a seed layer for epitaxially depositing a plurality of layers thereon to form a multi-quantum well structure 106 hereinabove.
  • the layer of strained semiconductor material 158 may comprise In z Gai -z N, wherein z is between about 0.06 and about 0.08.
  • the layer of strained semiconductor material 158 may comprise a III-V
  • the layer of strained semiconductor material 158 may comprise at least one of gallium nitride (GaN), indium gallium nitride
  • Al x Gai -x N aluminum gallium nitride
  • a plurality of openings 160 may be formed that extend through the layer of strained semiconductor material 158.
  • a masking and etching process may be used to form the openings 160 through the layer of strained semiconductor material 158.
  • the structure may be subjected to a thermal treatment process at a temperature at which the strain relaxation layer 154 may deform plastically or elastically in such a manner as to allow an accompanying relaxation of the stress and/or strain in the remaining portion of the layer of strained semiconductor material 158, so as to transform the remaining portion of the layer of strained semiconductor material 158 into at least one volume of relaxed semiconductor material 162, as illustrated in FIG. 4.
  • various layers of the radiation-emitting semiconductor device 100 may be formed by sequentially epitaxially depositing a plurality of III-V
  • a first base region 102 of n-type ternary Ill-nitride material having a composition and configuration as previously described may be epitaxially deposited on the volume of relaxed semiconductor material 162.
  • Quantum well regions 108-114 and barrier regions 1 16-120 comprising ternary Ill-nitride materials having compositions and configurations as described hereinabove then may be epitaxially deposited on the first base region 102 to form a multi-quantum well structure 106.
  • a second base region 104 of p-type semiconductor material having a composition and configuration as previously described then may be epitaxially deposited on the multi-quantum well structure 106.
  • the substrate 152 may be removed to provide access to the first base region 102, for example, to form one or more electrical contacts or contact layers thereon.
  • One or more of an etching process, a grinding process, a chemical-mechanical polishing (CMP) process, a laser ablation process, and a SMART CUT® process may be used to remove the substrate 152.
  • the first conductive contact 142 then may be formed or otherwise provided on the first base region 102, and the second conductive contact 144 may be formed or otherwise provided on the second base region 104.
  • Embodiment 1 A radiation-emitting semiconductor device, comprising: a first base region comprising an n-type III-V semiconductor material; a second base region comprising a p-type III-V semiconductor material; and a multi-quantum well structure disposed between the first base region and the second base region, the multi-quantum well structure comprising at least three quantum well regions and at least two barrier regions, a first barrier region of the at least two barrier regions disposed between a first quantum well region and a second quantum well region of the at least three quantum well regions, a second barrier region of the at least two barrier regions disposed between the second quantum well region and a third quantum well region of the at least three quantum well regions, the first quantum well region located closer to the first base region than the third quantum well region, and the third quantum well region located closer to the second base region than the first quantum well region; wherein each of the first quantum well region, the second quantum well region, and the third quantum well region has a well region thickness in a direction extending between the first base region
  • Embodiment 2 The radiation-emitting semiconductor device of Embodiment 1 , wherein each of the first quantum well region, the second quantum well region, and the third quantum well region comprises a ternary Ill-nitride material.
  • Embodiment 3 The radiation-emitting semiconductor device of Embodiment 2, wherein the ternary Ill-nitride material comprises In x Gai -x N.
  • Embodiment 4 The radiation-emitting semiconductor device of Embodiment 3, wherein x is at least about 0.12.
  • Embodiment 5 The radiation-emitting semiconductor device of any one of Embodiments 1 through 4, wherein each of the first barrier region and the second barrier region comprises a ternary Ill-nitride material.
  • Embodiment 6 The radiation-emitting semiconductor device of Embodiment 5, wherein the ternary Ill-nitride material of the first barrier region and the second barrier region comprises In y Gai -y N.
  • Embodiment 7 The radiation-emitting semiconductor device of Embodiment 6, wherein y is at least about 0.05.
  • Embodiment 8 The radiation-emitting semiconductor device of any one of Embodiments 1 through 4, wherein each of the first barrier region and the second barrier region comprises a binary Ill-nitride material.
  • Embodiment 9 The radiation-emitting semiconductor device of Embodiment 8, wherein the binary Ill-nitride material of the first barrier region and the second barrier region comprises GaN.
  • Embodiment 10 The radiation-emitting semiconductor device of any one of Embodiments 1 through 9, wherein the well region thickness of each of the first quantum well region, the second quantum well region, and the third quantum well region is at least about five (5) nanometers.
  • Embodiment 1 1 The radiation-emitting semiconductor device of Embodiment 10, wherein the well region thickness of each of the first quantum well region, the second quantum well region, and the third quantum well region is at least about ten (10) nanometers.
  • Embodiment 12 The radiation-emitting semiconductor device of Embodiment 1 1 , wherein the well region thickness of each of the first quantum well region, the second quantum well region, and the third quantum well region is at least about twenty (20) nanometers.
  • Embodiment 13 The radiation-emitting semiconductor device of any one of Embodiments 1 through 12, wherein the first barrier region has a first bandgap energy and the second barrier region has a second bandgap energy, the second bandgap energy being less than the first bandgap energy.
  • Embodiment 14 The radiation-emitting semiconductor device of any one of Embodiments 1 through 13, wherein the multi-quantum well structure further comprises one or more additional quantum well regions and one or more additional barrier regions, and wherein the electron hole energy barriers between adjacent quantum well regions in the multi-quantum well structure decrease in a step-wise manner across the multi-quantum well structure from the first base region to the second base region.
  • Embodiment 15 A device including at least one light-emitting diode (LED), comprising: a first base region comprising an n-type III-V semiconductor material; a second base region comprising a p-type III-V semiconductor material; and a multi-quantum well structure disposed between the first base region and the second base region, the multi-quantum well structure comprising at least three quantum well regions and at least two barrier regions, a first barrier region of the at least two barrier regions disposed between a first quantum well region and a second quantum well region of the at least three quantum well regions, a second barrier region of the at least two barrier regions disposed between the second quantum well region and the third quantum well region of the at least three quantum well regions, the first quantum well region located closer to the first base region than the third quantum well region, and the third quantum well region located closer to the second base region than the third quantum well region; wherein each of the first quantum well region, the second quantum well region, and the third quantum well region comprises In x Gai -x N and
  • y is at least about 0.05, and has a barrier region thickness in the direction extending between the first base region and the second base region greater than each of the well region thicknesses and at least about two (2) nanometers; and wherein an electron hole energy barrier between the third quantum well region and the second quantum well region is less than an electron hole energy barrier between the second quantum well region and the first quantum well region.
  • Embodiment 16 The device of Embodiment 15, wherein the well region thickness of each of the first quantum well region, the second quantum well region, and the third quantum well region is at least about five (5) nanometers.
  • Embodiment 17 The device of Embodiment 15 or Embodiment 16, wherein the first barrier region has a first bandgap energy and the second barrier region has a second bandgap energy, the second bandgap energy being less than the first bandgap energy.
  • Embodiment 18 The device of Embodiment 15 or Embodiment 17, wherein the multi-quantum well structure has a total structure thickness in the direction extending between the first base region and the second base region of at least about 10 nm.
  • Embodiment 19 A method of forming a radiation-emitting device, comprising: sequentially epitaxially depositing a plurality of III-V semiconductor material volumes over a substrate to form a multi-quantum well structure comprising a first barrier region disposed between a first quantum well region and a second quantum well region, and a second barrier region disposed between the second quantum well region and a third quantum well region; forming each of the first quantum well region, the second quantum well region, and the third quantum well region to have a well region thickness of at least about two (2) nanometers; forming each of the first barrier region and the second barrier region to have a barrier region thickness greater than or equal to each of the well region thicknesses; and selecting a composition of each of the first quantum well region, the second quantum well region, and the third quantum well region such that an electron hole energy barrier between the third quantum well region and the second quantum well region is less than an electron hole energy barrier between the second quantum well region and the first quantum well region.
  • Embodiment 20 The method of Embodiment 19, further comprising forming each of the first quantum well region, the second quantum well region, and the third quantum well region to comprise a ternary Ill-nitride material.
  • Embodiment 21 The method of Embodiment 20, further comprising selecting the ternary Ill-nitride material to comprise In x Ga ]-x N.
  • Embodiment 22 The method of Embodiment 21 , further comprising formulating the In x Gai -x N such that x is at least about 0.12.
  • Embodiment 23 The method of any one of Embodiments 19 through 22, further comprising forming each of the first barrier region and the second barrier region to comprise a ternary I II -nitride material.
  • Embodiment 24 The method of Embodiment 23, further comprising selecting the ternary Ill-nitride material of the first barrier region and the second barrier region to comprise In y Gai -y N.
  • Embodiment 25 The method of Embodiment 24, further comprising formulating the In y Gai- y N such that y is at least about 0.05.
  • Embodiment 26 The method of any one of Embodiments 19 through 22, further comprising forming each of the first barrier region and the second barrier region to comprise a binary Ill-nitride material.
  • Embodiment 27 The method of Embodiment 26, further comprising selecting the binary Ill-nitride material of the first barrier region and the second barrier region to comprise GaN.
  • Embodiment 28 The method of any one of Embodiments 19 through 27, further comprising forming each of the first quantum well region, the second quantum well region, and the third quantum well region to have a respective well region thickness of at least about five (5) nanometers.
  • Embodiment 29 The method of Embodiment 28, further comprising forming each of the first quantum well region, the second quantum well region, and the third quantum well region to have a respective well region thickness of at least about ten (10) nanometers.
  • Embodiment 30 The method of Embodiment 29, further comprising forming each of the first quantum well region, the second quantum well region, and the third quantum well region to have a respective well region thickness of at least about twenty (20) nanometers.
  • Embodiment 31 The method of any one of Embodiments 19 through 30, further comprising forming the first barrier region to have a first bandgap energy, and forming the second barrier region to have a second bandgap energy less than the first bandgap energy.
  • Embodiment 32 The method of any one of Embodiments 19 through 27, further comprising forming the multi-quantum well structure to have a total structure thickness of at least about 10 nm.
  • Embodiment 33 A method of forming a radiation-emitting device, comprising: forming a plurality of openings extending through a layer of strained semiconductor material over a strain relaxation layer; thermally treating the strained semiconductor material and the strain relaxation layer and causing deformation of the strain relaxation layer and relaxation of the strained semiconductor material to form at least one volume of relaxed semiconductor material; sequentially epitaxially depositing a plurality of III-V semiconductor material volumes over the at least one volume of relaxed semiconductor material to form a multi-quantum well structure comprising a first barrier region disposed between a first quantum well region and a second quantum well region, and a second barrier region disposed between the second quantum well region and a third quantum well region; forming each of the first quantum well region, the second quantum well region, and the third quantum well region to have a well region thickness of at least about two (2) nanometers; forming each of the first barrier region and the second barrier region to have a barrier region thickness greater than or equal to each of the well region thicknesses; and
  • Embodiment 34 The method of Embodiment 33, further comprising forming each of the first quantum well region, the second quantum well region, and the third quantum well region to comprise a ternary Ill-nitride material.
  • Embodiment 35 The method of Embodiment 34, further comprising selecting the ternary Ill-nitride material to comprise In x Gai -x N.
  • Embodiment 36 The method of Embodiment 35, further comprising formulating the In x Gai_ x N such that x is at least about 0.12.
  • Embodiment 37 The method of any one of Embodiments 33 through 36, further comprising forming each of the first barrier region and the second barrier region to comprise a ternary ⁇ -nitride material.
  • Embodiment 38 The method of Embodiment 37, further comprising selecting the ternary Ill-nitride material of the first barrier region and the second barrier region to comprise In y Gai -y N.
  • Embodiment 39 The method of Embodiment 38, further comprising formulating the In y Gau y N such that y is at least about 0.05.
  • Embodiment 40 The method of any one of Embodiments 33 through 36, further comprising forming each of the first barrier region and the second barrier region to comprise a binary Ill-nitride material.
  • Embodiment 41 The method of Embodiment 40, further comprising selecting the binary Ill-nitride material of the first barrier region and the second barrier region to comprise GaN.
  • Embodiment 42 The method of any one of Embodiments 33 through 41 , further comprising forming each of the first quantum well region, the second quantum well region, and the third quantum well region to have a respective well region thickness of at least about five (5) nanometers.
  • Embodiment 43 The method of Embodiment 42, further comprising forming each of the first quantum well region, the second quantum well region, and the third quantum well region to have a respective well region thickness of at least about ten ( 10) nanometers.
  • Embodiment 44 The method of Embodiment 43, further comprising forming each of the first quantum well region, the second quantum well region, and the third quantum well region to have a respective well region thickness of at least about twenty (20) nanometers.
  • Embodiment 45 The method of any one of Embodiments 33 through 44, further comprising forming the first barrier region to have a first bandgap energy, and forming the second barrier region to have a second bandgap energy less than the first bandgap energy.
  • Embodiment 46 The method of any one of Embodiments 33 through 41 , further comprising forming the multi-quantum well structure to have a total structure thickness of at least about 10 nm.
  • Embodiment 47 The method of any one of Embodiments 33 through 46, further comprising forming the strained semiconductor material to comprise In z Gai_ z N.
  • Embodiment 48 The method of Embodiment 47, further comprising formulating the In 2 Gai -z N such that z is between about 0.06 and about 0.08.
  • Embodiment 49 The method of any one of Embodiments 33 through 48, further comprising forming the strain relaxation layer to comprise at least one of a silicate glass, a phosphosilicate glass, a borosilicate glass, and a borophosphosilicate glass.

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Abstract

L'invention concerne des dispositifs semiconducteurs émetteurs de rayonnement qui comprennent une première région de base comportant un matériau semiconducteur III-V de type n, une deuxième région de base comportant un matériau semiconducteur III-V de type p et une structure de puits quantiques multiples disposée entre la première région de base et la deuxième région de base. La structure de puits quantiques multiples comprend au moins trois régions de puits quantiques et au moins deux régions barrières. Une barrière énergétique opposée aux électrons et trous entre une troisième des régions de puits quantiques et une deuxième des régions de puits quantiques est inférieure à la barrière énergétique opposée aux électrons et trous entre la deuxième des régions de puits quantiques et une première région de puits quantiques. Des procédés de formation de tels dispositifs comprennent successivement le dépôt par épitaxie de couches d'une telle structure de puits quantiques multiples et la sélection d'une composition et d'une configuration des couches de telle sorte que les barrières énergétiques opposées aux électrons et trous varient sur la structure de puits quantiques multiples.
PCT/IB2012/002790 2012-01-31 2012-12-17 Dispositifs photoactifs à distribution améliorée des porteurs de charges, ainsi que leur procédé de formation. WO2013114152A1 (fr)

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DE112012005796.1T DE112012005796T5 (de) 2012-01-31 2012-12-17 Photoaktive Bauelemente mit einer verbesserten Verteilung von Ladungsträgern sowie Verfahren zum Ausbilden derselben
CN201280068513.5A CN104094419A (zh) 2012-01-31 2012-12-17 具有电荷载流子的改进分布的光敏器件及其形成方法
KR1020147021211A KR20140119714A (ko) 2012-01-31 2012-12-17 향상된 전하 캐리어들의 분포를 갖는 광활성 장치들 및 그 형성 방법들
JP2014553817A JP6155478B2 (ja) 2012-01-31 2012-12-17 電荷キャリアの分布が改善された光活性デバイス及びその形成方法

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US13/362,866 US8471243B1 (en) 2012-01-31 2012-01-31 Photoactive devices with improved distribution of charge carriers, and methods of forming same
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FR1251158A FR2986661B1 (fr) 2012-02-08 2012-02-08 Dispositifs photoactifs avec une repartition amelioree des porteurs de charge, et procedes de formation de ces dispositifs

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US10062805B2 (en) 2014-11-07 2018-08-28 Stanley Electric Co., Ltd. Semiconductor light-emitting element
US10186671B2 (en) 2014-11-07 2019-01-22 Stanley Electric Co., Ltd. Semiconductor light-emitting element
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DE112012005796T5 (de) 2014-10-16

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