WO2013111599A1 - 真空蒸着装置 - Google Patents

真空蒸着装置 Download PDF

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Publication number
WO2013111599A1
WO2013111599A1 PCT/JP2013/000374 JP2013000374W WO2013111599A1 WO 2013111599 A1 WO2013111599 A1 WO 2013111599A1 JP 2013000374 W JP2013000374 W JP 2013000374W WO 2013111599 A1 WO2013111599 A1 WO 2013111599A1
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WO
WIPO (PCT)
Prior art keywords
vapor deposition
evaporation
film thickness
deposition rate
evaporation source
Prior art date
Application number
PCT/JP2013/000374
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English (en)
French (fr)
Japanese (ja)
Inventor
一樹 北村
展幸 宮川
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パナソニック株式会社
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Application filed by パナソニック株式会社 filed Critical パナソニック株式会社
Priority to KR1020147022362A priority Critical patent/KR20140110082A/ko
Priority to CN201380006704.3A priority patent/CN104066865A/zh
Publication of WO2013111599A1 publication Critical patent/WO2013111599A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate

Definitions

  • the present invention relates to a vacuum deposition apparatus for forming a thin film by depositing a deposition material on a plurality of types of deposition objects such as a substrate.
  • the vacuum evaporation apparatus arranges an evaporation source containing an evaporation material in a vacuum chamber and a deposition target such as a substrate, and heats the evaporation source in a state where the inside of the vacuum chamber is depressurized to vaporize the evaporation source.
  • the vaporized vapor deposition material is deposited on the surface of the vapor deposition target to form a thin film.
  • a part of the vapor deposition material vaporized from the evaporation source does not travel toward the deposition target and may not adhere to the surface of the deposition target.
  • the use efficiency of the material decreases and the deposition rate decreases.
  • the mixed thin film deposited on the deposition target is irradiated with light of two wavelengths, and the material composition in the mixed coating is calculated from the attenuation rate of each wavelength in the reflected light.
  • a thin film forming apparatus that feeds back to the control of the deposition rate is known (see, for example, Patent Document 2).
  • the thin film forming apparatus described in Patent Document 2 calculates the material composition in the thin film actually deposited on the deposition target, and linearly monitors the evaporation amount of the deposition material in each evaporation source. I can't. Therefore, the vapor deposition rate cannot be appropriately corrected during vapor deposition, and a configuration such as a laser device that outputs light and a photodiode that detects reflected light is separately required.
  • the present invention solves the above-mentioned problems, and in the case where a plurality of types of vapor deposition materials are vapor-deposited on an object to be vapor-deposited, the vapor deposition rate of an evaporation source for evaporating each vapor deposition material can be individually monitored with a simple configuration, and a thin film
  • An object of the present invention is to provide a vacuum vapor deposition apparatus capable of accurately controlling the film thickness and the mixture concentration ratio.
  • the present invention is a vacuum vapor deposition apparatus that vapor-deposits a plurality of vapor deposition materials on an object to be vapor-deposited, and vaporizes one vapor deposition material and another vapor deposition material.
  • a vapor deposition material evaporated from each of the first vapor deposition source and the set vapor deposition rate storage unit to be stored is attached, and the mixed vapor deposition rate Y1 of each vapor deposition material is measured from the film thickness, and the second vaporization source is measured.
  • the first film thickness meter disposed closer to the first evaporation source than the first evaporation source, and the mixed vapor deposition rate Y2 of each evaporation material are measured to be closer to the second evaporation source than the first evaporation source.
  • the second film thickness meter disposed at the position, and the mixed deposition rate Y measured by the two film thickness meters , Y2 respectively, and the first film thickness meter of the one vapor deposition material per unit time that reaches each of the two film thickness meters from the first evaporation source.
  • the second film of the second film thickness meter reaches the deposition amount ratio B1.
  • a measurement unit that calculates the deposition rates X1 and X2 of the first and second evaporation sources from the reaching amount ratios B1 and B2 stored in the reaching amount ratio storage unit, and the deposition rate control unit includes: Decrease in vapor deposition rates X1 and X2 of the first and second evaporation sources calculated by the measurement unit Are configured to control at least one of the first and second evaporation sources so as to coincide with at least one of the set vapor deposition rates A1 and A2 stored in the set vapor deposition rate storage unit, respectively.
  • the measurement unit may reach the set deposition rates A2 and A1 stored in the set deposition rate storage unit from the mixed deposition rates Y1 and Y2 stored in the mixed deposition rate storage unit. It is preferable to calculate the vapor deposition rates X1 and X2 of the first and second evaporation sources by subtracting the values obtained by multiplying the reach amount ratios B2 and B1 stored in the ratio storage unit, respectively.
  • the first evaporation rates C1 and C2 respectively measured by the first and second film thickness meters, and the second evaporation in advance.
  • a value obtained by adding the second vapor deposition rates D1 and D2 respectively measured by the first and second film thickness meters when only the evaporation source is operated is the first virtual mixed vapor deposition rate E1, E2 and the values measured by the first and second film thickness gauges when both the first and second evaporation sources are operated in advance are the second virtual mixed vapor deposition rates F1 and F2, respectively.
  • the measurement unit uses a vapor deposition rate correction coefficient K1, K2, which is a value obtained by dividing the first virtual mixed vapor deposition rate E1, E2 by the second virtual mixed vapor deposition rate F1, F2, respectively, as the mixed vapor deposition rate Y1, Multiply Y2 to calculate corrected mixed vapor deposition rates Y'1 and Y'2, respectively.
  • K1, K2 is a value obtained by dividing the first virtual mixed vapor deposition rate E1, E2 by the second virtual mixed vapor deposition rate F1, F2, respectively, as the mixed vapor deposition rate Y1, Multiply Y2 to calculate corrected mixed vapor deposition rates Y'1 and Y'2, respectively.
  • K1, K2 is a value obtained by dividing the first virtual mixed vapor deposition rate E1, E2 by the second virtual mixed vapor deposition rate F1, F2, respectively.
  • Multiply Y2 to calculate corrected mixed vapor deposition rates Y'1 and Y'2, respectively.
  • the reach ratio storage unit stores the reach ratios B1 and B2 in advance, and the deposition rate correction coefficients K1 and K2 are preset in the measurement unit. preferable.
  • the vacuum deposition apparatus preferably further includes a display unit for displaying the deposition rates X1 and X2 of the first and second evaporation sources calculated by the calculation unit.
  • the deposition rate control unit controls the temperatures of the first and second evaporation sources, respectively.
  • the vapor deposition rate control unit controls an opening degree of a valve that changes an opening area of each evaporation opening of the first and second evaporation sources.
  • a separation distance between the second evaporation source and the second film thickness meter is shorter than a separation distance between the first evaporation source and the first film thickness meter.
  • a cylindrical flow path having an opening is provided in the vicinity of the evaporation opening of the second evaporation source and in the vicinity of the second film thickness meter.
  • a cylindrical flow path having an opening is provided in the vicinity of the evaporation opening of the first evaporation source and in the vicinity of the first film thickness meter.
  • the vacuum deposition apparatus preferably further includes a cylindrical body that surrounds a space between the first and second evaporation sources and the deposition target and has an opening surface on the deposition target side.
  • the vapor deposition of each vapor deposition material from the first and second vapor sources when the reach ratios B1 and B2 are measured in advance and the mixed vapor deposition rates Y1 and Y2 of the two film thickness meters are measured, the vapor deposition of each vapor deposition material from the first and second vapor sources.
  • the speeds X1 and X2 (deposition rate) can be monitored individually.
  • the vapor deposition rates X1 and X2 coincide with the set vapor deposition rates A1 and A2, respectively, the vapor deposition rate of the vapor deposition material that actually evaporates from the first and second evaporation sources can be set to the set value.
  • the film thickness and the mixture concentration ratio of the thin film can be accurately controlled.
  • the figure which shows the side cross section of the vacuum evaporation system which concerns on the 1st Embodiment of this invention, and the block configuration of a control apparatus The figure which shows the side cross section of the vacuum evaporation system which concerns on the modification of the said embodiment, and the block structure of a control part apparatus. The figure which shows the side cross section of the vacuum evaporation system which concerns on another modification of the said embodiment, and the block structure of a control part apparatus. The figure which shows the side cross section of the vacuum evaporation system which concerns on another modification of the said embodiment, and the block configuration of a control part apparatus. The figure which shows the side cross section of the vacuum evaporation system which concerns on the 2nd Embodiment of this invention, and the block configuration of a control apparatus.
  • the vacuum vapor deposition apparatus 1 of this embodiment is for vapor-depositing a plurality of (two kinds in this example) vapor deposition materials on an object to be vapor-deposited 2, a first evaporation source 3 for evaporating one vapor deposition material 30, and the like. And a second evaporation source 4 for evaporating the evaporation material 40.
  • the vacuum deposition apparatus 1 includes a cylindrical body 5 that surrounds a space between the first and second evaporation sources 3 and 4 and the deposition target 2 and has an opening surface on the deposition target 2 side, and a deposition target. 2 and a vacuum chamber 6 that evacuates the space in which the first and second evaporation sources 3 and 4 and the cylindrical body 5 are arranged.
  • the vacuum chamber 6 is configured such that the vacuum pump 61 can be evacuated to a vacuum state.
  • the cylindrical body 5 has an opening surface 51 at one end, and the deposition target body 2 such as a substrate is disposed so as to face the opening surface 51.
  • the vapor-deposited body 2 is transported from the front side of the drawing to the back side by a transport mechanism (not shown).
  • the first and second evaporation sources 3, 4 are arranged at different positions, and the portion where the first and second evaporation sources 3, 4 are not arranged is formed by the bottom 52. It is connected.
  • a cylindrical body heater (hereinafter referred to as a heater 53) formed of a sheathed heater or the like is wound around the outer periphery of the cylindrical body 5.
  • the heater 53 is connected to a power source 54 and receives power to heat the inside of the cylindrical body 5. Further, a temperature sensor 55 for measuring the temperature in the cylindrical body 5 is provided at the bottom 52 of the cylindrical body 5, and the measurement information of the temperature sensor 55 is a cylindrical body configured by a CPU, a memory, and the like. It is output to the temperature controller 56.
  • the cylindrical body temperature controller 56 can adjust the temperature in the cylindrical body 5 by receiving the measurement information of the temperature sensor 55 and controlling the amount of power supplied from the power source 54 to the heater 53.
  • the opening surface 51 is provided with a correction plate (not shown) having a plurality of openable and closable openings in order to control the flow rate of vaporized vapor deposition material from the cylindrical body 5 to the vapor deposition target body 2. Also good.
  • the cylindrical body 5 is attached with a first film thickness meter 7a and a second film thickness meter 7b so as to face a side opening (not shown) provided on the side wall.
  • These two film thickness gauges 7a and 7b are composed of a crystal oscillator film thickness gauge or the like, and by detecting the film thickness of the vapor deposition materials 30 and 40 per unit time adhered to the surfaces by vapor deposition, the vapor deposition rate. Measure.
  • the first film thickness meter 7a is disposed at a position relatively closer to the first evaporation source 3 than the second film thickness meter 7b
  • the second film thickness meter 7b is the first film thickness meter 7a. It is arranged at a position relatively closer to the second evaporation source 4 than.
  • the film thickness gauges 7a and 7b are independent of the type and composition of the vapor deposition materials 30 and 40, for example, during the operation of the first evaporation source 3, the vapor deposition rate of the vapor deposition material 30 and during the operation of the second evaporation source 4. Measures the vapor deposition rate of the vapor deposition material 40 and the mixed vapor deposition rates Y1, Y2 of the vapor deposition materials 30, 40 during both operations. Data relating to the deposition rate measured by the film thickness meters 7 a and 7 b is output to the control device 8 that controls the operation of the vacuum deposition apparatus 1.
  • the first and second evaporation sources 3 and 4 are obtained by holding vapor deposition materials 30 and 40 in heating containers 31 and 41 such as a pile.
  • the heating containers 31 and 41 are embedded in the cylindrical body 5 so that the opening side thereof is at the same height as the bottom 52 of the cylindrical body 5.
  • These first and second evaporation sources 3 and 4 are arranged at different positions on the bottom 52 of the cylindrical body 5.
  • the vapor deposition material 30 filled in the first evaporation source 3 is a host material constituting the main body of the vapor deposition film
  • the vapor deposition material 40 filled in the second evaporation source 4 is the host material. It is assumed that the doped dopant material.
  • Evaporation source heaters 32 and 42 are disposed in the peripheral portions of the heating containers 31 and 41, respectively. These evaporation source heaters 32 and 42 are connected to power supplies 33 and 43 and are supplied with power, thereby heating the heating containers 31 and 41 and the vapor deposition materials 30 and 40, respectively.
  • the heating containers 31 and 41 are provided with thermometers 34 and 44 for measuring their temperatures, and the measurement information of the thermometers 34 and 44 is output to the evaporation source temperature controllers 35 and 45.
  • the evaporation source temperature controllers 35 and 45 are connected to the vapor deposition rate control unit 81 of the control device 8.
  • the vapor deposition rate control unit 81 adjusts the temperature in the heating containers 31 and 41 by receiving the measurement information of the thermometers 34 and 44 and controlling the amount of power supplied from the power sources 33 and 43 to the evaporation source heaters 32 and 42. Then, the evaporation rates of the first and second evaporation sources 3 and 4 are controlled. Thereby, the vapor deposition rate of the actual vapor deposition materials 30 and 40 vapor-deposited on the to-be-deposited body 2 is controlled.
  • the control device 8 is measured by the set vapor deposition rate storage units 82a and 82b for storing the preset vapor deposition rates A1 and A2 of the first and second evaporation sources 3 and 4 and the film thickness meters 7a and 7b, respectively. And mixed vapor deposition rate storage units 83a and 83b for storing the mixed vapor deposition rates Y1 and Y2, respectively.
  • the control device 8 includes reaching amount ratio storage units 84a and 84b for storing the reaching amount ratios B1 and B2 of the vapor deposition materials 30 and 40 per unit time reaching the film thickness meters 7a and 7b, respectively.
  • One reach ratio storage unit 84a includes the second deposition material 30a for the first film thickness meter 7a out of one vapor deposition material 30 per unit time reaching the film thickness meters 7a and 7b from the first evaporation source 3.
  • the reach ratio B1 of the vapor deposition material 30 of the film thickness meter 7b is stored. That is, the reaching amount ratio B1 reaches the second film thickness meter 7b per unit time when the film thickness of the vapor deposition material 30 that reaches the first film thickness meter 7a per unit time is “1”.
  • the film thickness of the deposited vapor deposition material 30 is said. Since the second film thickness meter 7b is away from the first evaporation source 3, the concentration of the vapor deposition material 30 is lower in the vicinity of the second film thickness meter 7b than in the vicinity of the first film thickness meter 7a.
  • the value of the reach ratio B1 is normally “1” or less.
  • the other reaching amount ratio storage unit 84b includes the first film thickness meter 7b among the other vapor deposition materials 40 per unit time reaching the film thickness meters 7a and 7b from the second evaporation source 4.
  • the reach ratio B2 of the other vapor deposition material 40 of the film thickness meter 7a is stored.
  • the first film ratio B2 is the first film.
  • attained the thickness meter 7a per unit time is said.
  • the arrival amount ratios B1 and B2 are measured by individually operating the first and second evaporation sources 3 and 4 in advance before starting the vacuum deposition on the deposition target body 2. Unless the arrangement of the cylindrical body 5 and the film thickness gauges 7a and 7b to be applied is changed, it is given as a constant.
  • control device 1 performs the first operation based on the mixed vapor deposition rates Y1 and Y2 stored in the mixed vapor deposition rate storage units 83a and 83b and the reach amount ratios B1 and B2 stored in the reach amount ratio storage units 84a and 84b.
  • a measuring unit 85 for calculating the deposition rates X1 and X2 of the second evaporation source.
  • the following relational expression is established among the mixed vapor deposition rates Y1, Y2, the reaching amount ratios B1, B2, and the vapor deposition rates X1, X2 of the first and second evaporation sources.
  • the measuring unit 85 solves the simultaneous equations of the above expressions 1 and 2.
  • the vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4 can be calculated individually.
  • control device 8 includes a display unit 86 for displaying the vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4 measured by the measuring unit 85.
  • the display unit 86 may use a liquid crystal display provided in the control device 8 itself, or may output a predetermined display signal to a display terminal outside the device.
  • the vapor deposition rate control unit 81 uses the vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4 measured by the measurement unit 85 as the set vapor deposition rates A1 and X2 stored in the set vapor deposition rate storage units 82a and 82b.
  • a control signal is output to the evaporation source temperature controllers 35 and 45 so as to coincide with A2.
  • the evaporation source temperature controllers 35 and 45 adjust the temperature in the heating containers 31 and 41 by controlling the amount of power supplied from the power sources 33 and 43 to the evaporation source heaters 32 and 42, so that the first and The evaporation amount of the vapor deposition materials 30 and 40 from the second evaporation sources 3 and 4 is controlled.
  • the film thickness meters 7a and 7b continuously measure the mixed vapor deposition rates Y1 and Y2, respectively, and in response to this, the measuring unit 85 deposits the vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4. Is calculated. Thereby, the vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4 are linearly monitored.
  • the first and first ratios can be obtained by measuring the reach ratios B1 and B2 in advance and measuring the mixed deposition rates Y1 and Y2 of the two film thickness meters 7a and 7b.
  • the vapor deposition rates X1 and X2 (vapor deposition rate) of the vapor deposition materials 30 and 40 from the two evaporation sources 3 and 4 can be individually monitored.
  • the vapor deposition rates of the vapor deposition materials 30 and 40 that actually evaporate from the first and second vapor sources 3 and 4 are set according to the set values by matching the vapor deposition rates X1 and X2 with the set vapor deposition rates A1 and A2, respectively. Can be corrected.
  • the film thickness may have a greater influence on the light emission characteristics than the concentration of the vapor deposition material in the vapor deposition film.
  • one of the vapor deposition rates X1 and X2 may be controlled.
  • the vapor deposition rate X1 of the first evaporation source 3 is small, the measurement accuracy of the vapor deposition rate X1 is deteriorated.
  • the vapor deposition rate X2 of the second evaporation source 4 is larger, it is better to control only the vapor deposition rate X2 of the second evaporation source 4 than to control both the vapor deposition rates X1 and X2.
  • the deposition rate of the host material is larger than the deposition rate of the dopant material, it is preferable to control the deposition rate of the host material.
  • control device 8 includes an operation unit (not shown) for manually controlling the vapor deposition rates of the first and second evaporation sources 3 and 4 respectively. Therefore, the operator appropriately adjusts the vapor deposition rates of the first and second evaporation sources 3 and 4 by operating the operation unit while referring to the vapor deposition rates X1 and X2 displayed on the display unit 86. Can do.
  • the thickness may vary slightly. Therefore, the mixed vapor deposition rates Y1 and Y2 can be corrected by measuring these vapor deposition rates in advance.
  • the values measured by the first and second film thickness meters 7a and 7b when only the first evaporation source 3 is operated in advance are set as the first deposition rates C1 and C2.
  • the values measured by the first and second film thickness meters 7a and 7b when only the second evaporation source 4 is operated in advance are set as the second deposition rates D1 and D2.
  • the measurement unit 85 is a deposition rate correction coefficient that is a value obtained by dividing the first virtual mixed deposition rate E1 and E2 by the second virtual mixed deposition rate F1 and F2, respectively. K1 and K2 are calculated.
  • vapor deposition rate correction coefficients K1 and K2 are set in the measurement unit 85 in advance.
  • the measurement unit 85 multiplies the above-described mixed vapor deposition rates Y1 and Y2 to calculate corrected mixed vapor deposition rates Y′1 and Y′2, respectively.
  • the mixed vapor deposition rates Y′1 and Y′2 are used in place of the mixed vapor deposition rates Y1 and Y2 represented by the above formulas (1) and (2), respectively.
  • the measuring unit 85 By solving the simultaneous equations of the above formulas 1 and 2, the vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4 can be calculated individually. As a result, it is possible to more appropriately manage the deposition rate of the actual deposition materials 30 and 40 onto the deposition target 2.
  • the thin film is manufactured under the condition that the evaporation amount of the evaporation material 40 from the second evaporation source 4 is smaller than the evaporation amount of the evaporation material 30 from the first evaporation source 3.
  • the vacuum evaporation apparatus 1 of the modification shown in FIG. 2 is such that the distance between the second evaporation source 4 and the second film thickness meter 7b is such that the first evaporation source 3 and the first film thickness meter.
  • the positional relationship of these devices is set so as to be shorter than the separation distance from 7a.
  • Other configurations are the same as in the above embodiment.
  • the distance between the second evaporation source 4 and the second film thickness meter 7b is short, and the vapor deposition material 40 evaporated from the second evaporation source 4 is reduced.
  • the concentration increases in the vicinity of the second film thickness meter 7b. Therefore, in the 2nd film thickness meter 7b, it becomes easy to detect adhesion of the vapor deposition material 40 from the 2nd evaporation source 4, and the control precision of the vapor deposition rate at the time of manufacturing a thin film
  • the vacuum evaporation apparatus 1 of the modification shown in FIG. 3 is provided with a cylindrical flow path 91 having openings in the vicinity of the evaporation opening of the second evaporation source 4 and in the vicinity of the second film thickness meter 7b. ing. Other configurations are the same as in the above embodiment. Also in the vacuum vapor deposition apparatus 1 of this modified example, the vapor deposition material 40 evaporated from the second evaporation source 4 flows in the vicinity of the second film thickness meter 7 b through the cylindrical channel 91.
  • the 2nd film thickness meter 7b it becomes easy to detect adhesion of the vapor deposition material 40 from the 2nd evaporation source 4, and the control precision of the vapor deposition rate at the time of manufacturing a thin film
  • concentration can be improved.
  • the vacuum deposition apparatus 1 of the modified example shown in FIG. 4 is provided in the vicinity of the evaporation opening of the first evaporation source 3 and in the vicinity of the first film thickness meter 7a.
  • a cylindrical channel 92 having an opening is provided.
  • the vapor deposition material 30 evaporated from the first evaporation source 3 flows in the vicinity of the first film thickness meter 7a through the cylindrical flow path 92, so that the detection capability of the vapor deposition material 30 is detected. As a result, the control accuracy of the deposition rate can be improved.
  • a vacuum deposition apparatus according to a second embodiment of the present invention will be described with reference to FIG.
  • the vacuum evaporation apparatus 1 of this embodiment differs from the said 1st Embodiment in the measuring method in the measurement part 85.
  • FIG. Further, valves 36 and 46 for changing the respective opening areas are provided in the respective evaporation openings of the first and second evaporation sources 3 and 4.
  • the vapor deposition rate control part 81 controls the vapor deposition rate of the 1st, 2nd evaporation sources 3 and 4 by controlling the opening degree of these valves 36 and 46, respectively.
  • the vapor deposition rate control unit 81 may perform temperature control of the first and second evaporation sources 3 and 4 together as shown in the first embodiment.
  • the first film thickness meter 7a Since the first film thickness meter 7a is separated from the second evaporation source 4, when the first film thickness meter 7a measures the mixed evaporation rate Y1, the influence of the evaporation rate X2 of the second evaporation source 4 is affected.
  • the deposition rate X2 of the second evaporation source 4 is almost the same as the preset deposition rate A2.
  • the second film thickness meter 7b measures the mixed vapor deposition rate Y2, and thus the vapor deposition rate X1 of the first vapor source 3 is measured.
  • the vapor deposition rate X1 of the first evaporation source 3 is hardly different from the preset vapor deposition rate A1.
  • the reach ratios B1 and B2 are given in advance as constants, and the set deposition rates A1 and A2 are set values. Therefore, if the mixed deposition rates Y1 and Y2 are measured by the two film thickness meters 7a and 7b, the above formulas 9 and When 10 is measured, the vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4 can be calculated individually. That is, the measurement units 85a and 85b provided in the control device 8 subtract the values obtained by multiplying the set vapor deposition rates A2 and A1 by the reach ratios B2 and B1, respectively, from the mixed vapor deposition rates Y1 and Y2, respectively.
  • the vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4 can be calculated, respectively. In other words, if the above equations 9 and 10 are calculated instead of the simultaneous equations shown in the first embodiment, the vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4 are calculated. Can do.
  • the vacuum vapor deposition apparatus 1 of the present embodiment is useful for individually calculating one of the vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4, and is used as a thin film to be formed.
  • the deposition rate of each material can be accurately controlled according to the required material composition.
  • the vacuum evaporation apparatus 1 of this embodiment since the opening degree of the valves 36 and 46 provided in the 1st and 2nd evaporation sources 3 and 4 is controlled, respectively, compared with the case of controlling those temperatures. In addition, the vapor deposition rates of the first and second evaporation sources 3 and 4 can be quickly adjusted.
  • the present invention is not limited to the above-described embodiment, and various modifications are possible.
  • the present invention has been described based on an example in which two evaporation materials are evaporated by two evaporation sources. Three kinds of vapor deposition materials may be evaporated by three evaporation sources. In this case, if the mixed vapor deposition rate is measured using the third film thickness meter and the solution of the three simultaneous equations is obtained, the vapor deposition rates of the respective evaporation sources can be calculated individually.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2013/000374 2012-01-26 2013-01-25 真空蒸着装置 WO2013111599A1 (ja)

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KR1020147022362A KR20140110082A (ko) 2012-01-26 2013-01-25 진공 증착 장치
CN201380006704.3A CN104066865A (zh) 2012-01-26 2013-01-25 真空蒸镀装置

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JP2012-013969 2012-01-26
JP2012013969 2012-01-26

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KR (1) KR20140110082A (zh)
CN (1) CN104066865A (zh)
TW (1) TW201346049A (zh)
WO (1) WO2013111599A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
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WO2016114225A1 (ja) * 2015-01-14 2016-07-21 日東電工株式会社 有機蒸着膜の製造方法及び有機エレクトロルミネッセンス装置
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JP2014109072A (ja) * 2012-12-03 2014-06-12 Samsung Display Co Ltd 蒸着源、これを含む蒸着装置および蒸着方法
WO2016114225A1 (ja) * 2015-01-14 2016-07-21 日東電工株式会社 有機蒸着膜の製造方法及び有機エレクトロルミネッセンス装置
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