WO2013111253A1 - Boîtier de diode électroluminescente, élément électroluminescent à diode électroluminescente, et procédé de fabrication correspondant - Google Patents

Boîtier de diode électroluminescente, élément électroluminescent à diode électroluminescente, et procédé de fabrication correspondant Download PDF

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Publication number
WO2013111253A1
WO2013111253A1 PCT/JP2012/008434 JP2012008434W WO2013111253A1 WO 2013111253 A1 WO2013111253 A1 WO 2013111253A1 JP 2012008434 W JP2012008434 W JP 2012008434W WO 2013111253 A1 WO2013111253 A1 WO 2013111253A1
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WIPO (PCT)
Prior art keywords
lead frame
resin
led
end portion
laser processing
Prior art date
Application number
PCT/JP2012/008434
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English (en)
Japanese (ja)
Inventor
一徹 久米田
関　則彰
徳行 新名
秀幸 戸高
隆治 永江
史章 別府
博文 杉
篤史 飯尾
後藤　雄一
森田　健一
Original Assignee
パナソニック株式会社
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Priority claimed from JP2012012705A external-priority patent/JP5083472B1/ja
Priority claimed from JP2012246154A external-priority patent/JP6038598B2/ja
Application filed by パナソニック株式会社 filed Critical パナソニック株式会社
Publication of WO2013111253A1 publication Critical patent/WO2013111253A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to an LED (Light Emitting Diode) package, an LED light emitting element, and a method for manufacturing them.
  • LED Light Emitting Diode
  • the LED package has an LED chip mounted in a cavity, is molded with a sealing material such as silicone resin, and is electrically and mechanically connected to the mounting substrate by an electrode exposed to the outside.
  • a sealing material such as silicone resin
  • the most common LED package is an integrated heat sink, lead frame, and case.
  • the heat sink is required for heat diffusion
  • the lead frame is required for electrical conduction
  • the case is required for insulation and heat dissipation.
  • the LED package is required to efficiently extract the light emitted from the LED chip.
  • the LED package reflects the light by providing a reflector, and more light is emitted to the outside. Such high-brightness packages are being studied.
  • the lead frame is manufactured by etching or stamping a metal material for a lead frame made of a plate-like alloy thin plate such as iron-nickel or a metal thin plate such as copper-nickel-tin.
  • the lead frame manufactured in this way includes a pad electrode (island electrode) for mounting an LED chip, an inner lead electrode, and an outer lead electrode electrically connected to an external substrate.
  • the inner lead electrode is insulated from the pad electrode and is electrically connected to the LED chip.
  • the sealing resin is filled in the cavity to protect the LED chip and the wiring, and contains a fluorescent material to convert the wavelength of the light from the LED chip from blue to white, for example. Since the sealing resin is required to be filled in a narrow gap, a low-viscosity organic resin (for example, a silicone resin) is often used. For this reason, as a package, it is necessary to prevent the sealing resin poured into the cavity from leaking out from the side surface or the bottom surface of the package.
  • a low-viscosity organic resin for example, a silicone resin
  • the package member is made of a resin material and a metal having different thermal expansion coefficients, the adhesion and adhesion are poor.
  • the sealing resin leaks from the gap at the interface between the resin part and the metal part, the LED chip and the wiring in the reflector intended for sealing cannot be protected, and various solder mounting defects, etc. Cause problems.
  • the fluorescent material when the fluorescent material is contained in the sealing resin, the fluorescent material also leaks together with the sealing resin, resulting in deviation from the target chromaticity.
  • Patent Document 1 describes a semiconductor device in which a groove or a protrusion is formed in a part of a lead frame to prevent the sealing resin from leaking from the interface between the outer lead electrode and the package member toward the outer wall surface. ing. It is described that the forming direction of the groove and the protrusion is a direction perpendicular to the extending direction of the outer lead electrode. Further, it is described that the method of forming the groove and the protrusion is formed by punching (pressing) or etching. In addition, as a material of the lead frame, it is described that an alloy based on copper and whose surface is treated with silver is preferable from the viewpoint of conductivity, heat dissipation, mechanical strength, light reflection, and the like. ing.
  • Patent Document 1 has the following problems because it is a technique that focuses on preventing leakage of the sealing resin from the interface between the outer lead electrode and the package resin portion toward the outer wall surface.
  • a groove or protrusion is formed by punching (pressing) or etching on a lead frame made of silver-plated copper alloy surface, the formed groove or protrusion is made of copper alloy.
  • the silver plating on the surface may be damaged. Further, even if the surface is subjected to a silver treatment having a sufficient film thickness, it is inevitable that the silver treatment is not uniform in the groove or the protrusion.
  • the silver plating becomes thin or the silver plating is peeled off in the groove or the protrusion, and a hydroxide, an oxide, or the like is generated due to moisture or the like and may be corroded.
  • the copper alloy is corroded, the corroded material is exposed on the surface, and the LED characteristics such as luminance are deteriorated.
  • the sealing resin does not necessarily prevent the penetration of gas and moisture. For this reason, the deterioration of the LED chip is often caused by the penetration of moisture and gas in the air, and the reliability is often lowered.
  • An object of the present invention is to provide an LED package, an LED light-emitting element, and a method for manufacturing the same that can prevent sealing resin from leaking out of the package and prevent sulfide penetration into the cavity. .
  • An LED package includes a first lead frame including one surface on which an LED is placed, a back surface of the one surface and the other flat surface, and parallel to the one surface.
  • a second lead frame that faces the first lead frame without contacting the first lead frame in any direction, and a resin that connects between the connection ends of the first lead frame and the second lead frame that face each other. At least a part of the other surface of the first lead frame is exposed from the resin, and an end of the other surface of the first lead frame on the connection end side, and the connection end A rough surface is formed on at least a part of the portion by laser processing on the first lead frame.
  • LED package which can prevent the sealing resin leaking out from a package, and can prevent the penetration
  • the perspective view which shows typically the LED package which concerns on one embodiment of this invention Cross-sectional perspective view of LED package according to the present embodiment Sectional drawing of the LED package which concerns on this Embodiment Sectional drawing of the LED package which concerns on this Embodiment Diagram showing reflectivity of various metals
  • the figure which shows the formation degree of the recessed part formed by laser processing with respect to the lead frame which concerns on this Embodiment, and the surrounding silver oxide layer Diagram explaining the optimum range of laser processing from the relationship between laser frequency and peak power Diagram showing equilibrium oxygen partial pressure curves of silver, silver oxide and other metal oxides Diagram showing the reaction between silver oxide and package resin Manufacturing process diagram until sealing of sealing resin of LED package according to the present embodiment The figure which shows the photograph which expanded the lead frame of the LED package which concerns on this Embodiment.
  • An LED package includes a first lead frame including one surface on which an LED is placed, a back surface of the one surface and the other flat surface, and the one surface.
  • a second lead frame that faces the first lead frame without contacting the first lead frame in a direction parallel to the first lead frame, and a connection between the first lead frame and the second lead frame that face each other.
  • a resin, and at least a part of the other surface of the first lead frame is exposed from the resin, the end of the other surface of the first lead frame on the connection end side, and the A rough surface is formed on at least a part of the connection end portion by laser processing on the first lead frame.
  • a metal oxide layer is further formed on at least a part of the connection end portion of the first lead frame by laser processing on the first lead frame.
  • the first lead frame further includes a silver film on at least a part of the one surface, the other surface, and the connection end surface,
  • the metal oxide layer formed on the surface of the first lead frame by the laser processing is a silver oxide layer.
  • An LED light-emitting device includes the LED package, the LED placed on the first lead frame, and the one of the LED and the first and second lead frames.
  • a transparent resin that seals at least part of the surface is provided. Thereby, it is possible to prevent the sealing resin from leaking from the package and to prevent the penetration of impurities such as sulfides that contaminate or corrode the inside of the cavity.
  • An LED package manufacturing method includes: a first lead frame including one surface on which an LED is placed; and a back surface of the one surface and the other plane; A second lead frame facing the first lead frame without contacting the first lead frame in a direction parallel to the one surface; and a connecting end between the first lead frame and the second lead frame facing each other.
  • At least a part of the other surface of the first lead frame is a method of manufacturing an LED package exposed from the resin, Forming a rough portion by scraping a part of the other surface of the first lead frame by laser processing with respect to an end portion of the other surface of the first lead frame on the connecting end side; Resin that covers the connection end portion to which the scattered matter generated by scraping off the first lead frame in the step of forming the rough portion is attached and fixing the first lead frame and the second lead frame. Forming. Thereby, it is possible to prevent the sealing resin from leaking from the package and to prevent the penetration of impurities such as sulfides that contaminate or corrode the inside of the cavity.
  • the method of manufacturing an LED package according to an embodiment of the present invention further includes a roughing process by laser processing on an end portion of the other surface of the first lead frame and on a connection end portion side of the first lead frame. And forming a rough portion by laser processing at the connection end after forming the portion.
  • the lead frame and the package resin are firmly and closely connected to each other, thereby maintaining the optical characteristics by preventing intrusion of impurities such as moisture and sulfur dioxide from the outside of the package through the gap between the lead frame and the package resin.
  • impurities such as moisture and sulfur dioxide
  • the first lead frame is opposed to the second lead frame at the end of the other surface of the first lead frame. Then, on the connection end portion side of the first lead frame connected to the package resin, a part of the other surface of the first lead frame is scraped off by laser processing to form a rough portion and a metal oxide layer. And a step of forming a package resin having the metal oxide layer at a part of the connection end portion of the first lead frame and fixing the first lead frame and the second lead frame. And comprising.
  • the lead frame and the package resin are tightly connected in the presence of a metal compound, thereby preventing the entry of impurities such as moisture and sulfur dioxide from the outside of the package through the gap between the lead frame and the package resin. Characteristics can be maintained.
  • FIG. 1 is a perspective view schematically showing an LED package according to an embodiment of the present invention.
  • the LED package 100 includes a pair of rectangular lead frames 101 and 102, a rectangular insulating portion 103, and a reflector portion 104.
  • the insulating unit 103 electrically insulates the lead frame 101 and the lead frame 102 from each other.
  • the reflector unit 104 surrounds the outer periphery of the lead frames 101 and 102 and the insulating unit 103.
  • these shapes are not limited to rectangles, and may be polygonal or curved.
  • the lead frames 101 and 102, the insulating portion 103, and the reflector portion 104 are integrated.
  • the lead frames 101 and 102 are used by processing a metal plate made of copper or a copper alloy from the viewpoint of conductivity, heat dissipation, mechanical strength, light reflection, and the like.
  • the lead frames 101 and 102 are used after being silver-plated in order to improve optical characteristics.
  • a pair of the lead frame 101 and the lead frame 102 is arranged so as to sandwich the insulating portion 103 from the horizontal direction. That is, the lead frame 101 and the lead frame 102 and the insulating portion 103 are connected at the connection end where the lead frame 101 and the lead frame 102 face each other.
  • the lead frame 101 is, for example, an anode side lead portion
  • the lead frame 102 is a cathode side lead portion.
  • the insulating portion 103 is made of a thermosetting resin such as epoxy or a thermoplastic resin such as polyphthalamide, and holds the lead frame 101 and the lead frame 102.
  • the upper surface (front surface) of the insulating portion 103 which is one surface forms the concave bottom portion of the LED package 100 together with the upper surfaces (front surface) of the lead frames 101 and 102.
  • the reflector unit 104 is made of a thermosetting resin such as epoxy or a thermoplastic resin such as polyphthalamide, and efficiently reflects light from the LED element toward the upper portion of the LED package 100.
  • the reflector unit 104 is preferably a white resin containing, for example, titanium oxide. Further, the reflector unit 104 may be configured by the lead frames 101 and 102.
  • the LED chip 110 which is a light emitting element is mounted on the upper surface (front surface) of the lead frame 102 of the LED package 100.
  • the upper surface (surface) of the lead frame 102 on which the LED chip 110 is mounted, the lead frame 101, and the insulating portion 103 is surrounded by the reflector portion 104, so that the upper side of the LED package 100 has a concave LED mounting space (cavity). ) 105 is formed.
  • the light from the LED chip 110 is reflected. Therefore, it is preferable to minimize the area occupied by the insulating portion 103 having a lower reflectance and maximize the area occupied by the lead frames 101 and 102 having a higher reflectance.
  • the reflector unit 104 is not always necessary.
  • the LED chip 110 is connected (wire bonded) to the lead frames 101 and 102 by bonding wires 111 and 112 which are conductive members.
  • the diameters of the bonding wires 111 and 112 are preferably ⁇ 25 ⁇ m to 35 ⁇ m.
  • As the material Al, Cu, Pt, Au or the like is preferably used.
  • the LED chip 110 is, for example, a GaN blue light emitting diode chip.
  • the cavity 105 is filled with a sealing resin (not shown), and the LED chip 110 and the bonding wires 111 and 112 disposed in the cavity 105 are sealed by the sealing resin. Since this sealing resin has a high light transmittance at the emission wavelength of the LED element and is required to be filled in a narrow gap, an organic resin having a low viscosity (for example, a silicone resin) is often used.
  • a sealing resin for example, a silicone resin
  • FIG. 2 is a cross-sectional perspective view of the LED package 100 according to the present embodiment
  • FIG. 3 is a cross-sectional view of the LED package 100 according to the present embodiment. 2 and 3, the description of the LED chip 110 and the bonding wires 111 and 112 of FIG. 1 is omitted.
  • the portion where the lead frames 101 and 102 and the insulating portion 103 are connected has a step structure in which concave and convex portions are combined. More specifically, the connection end portions of the lead frames 101 and 102 have a step structure in which the upper surface (front surface) as one surface is wide and the lower surface (back surface) as the other surface is narrow.
  • the insulating portion 103 sandwiched between 102 has a step structure opposite to that of the insulating portion 103 having a narrow upper surface (front surface) and a lower lower surface (back surface).
  • the connection end portions of the lead frames 101 and 102 are portions where the lead frames 101 and 102 face each other and are connected to the insulating portion 103. Further, as shown in FIG.
  • connection end portion between the lead frames 101 and 102 and the reflector portion 104 has a structure in which an uneven portion is fitted, and the lead frames 101 and 102 are sandwiched by the package resin of the reflector portion 104. be able to.
  • This step structure is not actually formed at a right angle as shown in FIGS. That is, it is difficult to form the step structure at a right angle by, for example, etching, and a gentle curve may be drawn. The size of the curve depends on the processing accuracy.
  • the step structure of the lead frames 101 and 102 and the insulating portion 103 is a structure that places more importance on improving the sealing performance between the inside and outside of the cavity. Therefore, the connection end portions of the lead frames 101 and 102 may be not a step structure but a straight line perpendicular to the front and back surfaces, a slope, a curved surface, or other shapes.
  • the part is a part for which adhesion is still required.
  • the lead frames 101 and 102 are not covered with the insulating portion 103 as in the present embodiment, the lead frames 101 and 102 are exposed, so that the entry path of an external substance such as moisture is short.
  • the adhesion between the connection end of the first electrode and the insulating portion 103 is important.
  • the heat generated by the LED chip 110 is efficiently radiated by the lead frames 101 and 102 having a high electric heat rate.
  • the adhesion between the lead frames 101 and 102 and the connecting end portion of the insulating portion 103 and the connecting end portions of the lead frames 101 and 102 and the reflector portion 104 surrounded by the broken lines in FIGS. Is drastically improved.
  • FIG. 4 is a cross-sectional view of the LED package 100 according to the present embodiment.
  • FIG. 4A is a reproduction of FIG.
  • FIG. 4B is an enlarged view of a main part of a connection end portion (A portion) between the lead frames 101 and 102 and the insulating portion 103.
  • FIG. 4C is an enlarged view showing a laser-processed portion of the interface of the connection end portion (A portion).
  • FIG. 5 is a diagram showing the reflectance of various metals, which is a well-known fact.
  • the lead frames 101 and 102 are made of a copper alloy, and the surface is silver-plated.
  • the insulating part 103 and the reflector part 104 are made of epoxy resin.
  • This embodiment is characterized in that the Ag plating surfaces of the lead frames 101 and 102 are roughened in a predetermined state by laser processing. That is, as shown in FIG. 4C, a rough surface with a surface roughness (Ra) of 0.1-10 ⁇ m is formed on the Ag-plated surfaces of the lead frames 101, 102 by laser processing.
  • the Ag plating surfaces of the lead frames 101 and 102 are roughened by laser processing so as to form a rough surface of 0.1 to 10 ⁇ m, and then the lead frames 101 and 102 are bonded to the epoxy resin of the insulating portion 103 or the reflector portion 104. Resin molding.
  • the step structure in the laser irradiation portion such as the A portion (connection end portion) is not actually formed at a right angle as shown in FIGS. That is, it is difficult to form the step structure at a right angle, and a gentle curve is often drawn. If the lead frames 101 and 102 are curved, irregularities cannot be formed on the surfaces of the lead frames 101 and 102 unless the laser is irradiated with high output. This is because the laser irradiation power density decreases as the irradiation area of the lead frames 101 and 102, which are objects, increases.
  • the lead frames 101 and 102 are flat and approach the direction perpendicular to the laser irradiation direction, so that irregularities are easily formed on the surfaces of the lead frames 101 and 102 even when the laser output is low. That is, the surface area of the lead frames 101 and 102 that receive the laser light is approximately the same as the area (size) of the laser light, such as the laser being irradiated onto the surfaces of the lead frames 101 and 102 more vertically. Is easy to form irregularities on the surfaces of the lead frames 101 and 102 even if the output is low.
  • the surface area of the lead frames 101 and 102 that receive the laser beam becomes too large relative to the area of the laser beam, and the lead frame 101 must be irradiated with a high output of the laser. , 102 cannot form irregularities on the surface.
  • the laser set to a high output if the laser is irradiated onto a portion where the laser hits vertically, such as a flat portion, the power is too large and the periphery of the processing portion is discolored by heat.
  • the lead frames 101 and 102 are discolored, the optical characteristics are deteriorated, and the luminance of the LED is lowered.
  • the lower surface (rear surface) of the lead frames 101 and 102 is used, the possibility of a decrease in solderability is increased due to the influence of a high-power laser.
  • the scattered matter when a large amount of scattered matter corresponding to the portion scraped by the laser is scattered, the scattered matter also scatters on the upper surface (surface) of the lead frames 101 and 102 and reflects the LED light, and is reflected on the upper surface.
  • the optical characteristics such as the rate decrease.
  • the lower surface (rear surface) of the lead frames 101 and 102 is scattered, the scattered matter becomes an obstacle and the possibility of a decrease in solderability increases. Therefore, in the laser processing, sufficient unevenness must be formed with a lower output in consideration of the influence on the surroundings that leads to quality degradation.
  • the reflectance of the surfaces of the lead frames 101 and 102 (Ag plating surface) is high, the laser beam is reflected without being absorbed by the surfaces of the lead frames 101 and 102 (Ag plating surface). Therefore, irregularities cannot be formed on the surfaces of the lead frames 101 and 102 without irradiating with a high laser output.
  • the LED package of the present invention needs to reflect the LED efficiently, and thus Ag plating is applied to improve the optical characteristics. Accordingly, the surface of the lead frames 101 and 102 (Ag plating surface) basically has high optical characteristics, and laser processing must be performed at a high output accordingly.
  • the optical characteristics are low, such as the reflectance of the surfaces of the lead frames 101 and 102 (Ag plating surface) is low, the surface of the lead frames 101 and 102 (Ag plating surface) absorbs the laser beam without reflection. Therefore, it is easy to form irregularities on the surfaces of the lead frames 101 and 102 even when the laser output is low. Further, for example, when irregularities are formed on the surfaces of the lead frames 101 and 102 (Ag plating surface) by the first laser irradiation, scattered objects corresponding to the portions of the lead frames 101 and 102 scraped around the irregularities. Splashes around. As a result, the optical characteristics of the surfaces of the lead frames 101 and 102 (Ag plating surface) are degraded.
  • laser processing of the Ag plating surfaces of the lead frames 101 and 102 is performed on the connection end portion side end portion of the lower surface (back surface) of the lead frames 101 and 102. It is applied to the boundary portion with the structure (C portion in FIG. 4B). In other words, it is applied to the lower surface (rear surface) which is the other surface of the lead frames 101 and 102 and the end portion which is the boundary portion (C portion in FIG. 4B) with the connection end portion (A portion). In addition, it may be formed on the surface (B portion in FIG. 4B) of the lead frames 101 and 102 at the connection end portion (A portion) between the lead frames 101 and 102 and the insulating portion 103 later.
  • irregularities can be easily formed in the C portion which is a planar shape even with a low-power laser. Then, scattered objects corresponding to the lead frames 101 and 102 scraped off by the formation of irregularities in the C portion are scattered, so that small irregularities due to the scattered objects are formed around the C portion (including the B portion). As a result, a rough surface is formed on the Ag-plated surface of the lead frames 101 and 102, so that the epoxy resin flows into the rough surface, and the adhesion area between the epoxy resin and the Ag-plated surface of the lead frames 101 and 102 is increased. Increase. As a result, the adhesion at the interface between the lead frames 101 and 102 and the insulating portion 103 and the reflector portion 104 is improved. However, in this case, the amount of scattered matter is not so large as to adhere to the upper surface (surface).
  • the optical characteristics of the periphery of C part deteriorate due to the above scattered matter, for example, the reflectance decreases.
  • the curved B portion can easily absorb the laser beam, and the unevenness can be sufficiently formed even with the low-power laser beam. That is, it is good to form a recessed part by laser processing in the boundary part with the connection surface (B part) of a lower surface, and to form a recessed part by laser processing in a connection surface (B part) after that.
  • a rough surface having large irregularities is easily formed on the Ag plating surfaces of the lead frames 101 and 102 by the low-power laser beam, so that the epoxy resin flows into the rough surface, and the epoxy resin and the lead frames 101 and 102.
  • This further increases the adhesion area between the Ag plating surface and the surface.
  • the adhesion at the interface between the lead frames 101 and 102 and the insulating portion 103 and the reflector portion 104 is greatly improved.
  • the laser irradiation portion is not always in the direction perpendicular to the lead frames 101 and 102 (directly above). Therefore, for example, when the laser beam is irradiated from an oblique direction (X direction in FIG. 4B) with respect to the lead frames 101 and 102, when the laser beam is applied to the portion B in FIG. The B part of 101 does not hit the laser well. That is, since the surface areas of the lead frames 101 and 102 that receive the laser beam are extremely different with respect to the same laser irradiation area, the degree of laser absorption between the lead frame 101 and the lead frame 102 varies greatly.
  • the surface areas of the lead frames 101 and 102 that receive the laser light are the same for the same laser irradiation area. Both are processed with approximately the same level of laser processing. Therefore, even if laser irradiation is performed from an oblique direction, the degree of laser processing is less likely to vary.
  • the lead frames 101 and 102 and the insulating portion 103 can be bonded more strongly.
  • the structure will be described below.
  • the silver plating surfaces of the lead frames 101 and 102 are roughened and oxidized in a predetermined state by laser processing. That is, as shown in FIG. 4C, a rough portion and a silver oxide layer are formed on the silver-plated surfaces of the lead frames 101 and 102 by laser processing.
  • the silver plating surfaces of the lead frames 101 and 102 are roughened and oxidized by laser processing, and the lead frames 101 and 102 are resin-molded with the epoxy resin of the insulating portion 103 or the reflector portion 104.
  • the depth of the rough portion formed by laser processing is not larger than the thickness of the silver plating. The rough portion thus formed increases the adhesion area with the resin, and the adhesion is improved by the anchor effect.
  • FIG. 5 shows the reflectance of various metal materials
  • silver has a higher reflectance in the visible light region than other metal materials. Therefore, in the laser processing, a sufficient rough portion and a silver oxide layer must be formed with a lower output in consideration of the influence on the environment that leads to quality degradation.
  • the laser processing of the lead frames 101 and 102 on the silver-plated surface is performed on the lower surface (rear surface) of the lead frames 101 and 102 and on the connection end side (C portion in FIG. 4B). It is good to apply to.
  • the laser is simultaneously applied to the lower surface (rear surface) which is the other surface of the lead frames 101 and 102, at the end portion (C portion in FIG. 4B) on the connection end portion (A portion) side and the connection end portion (A portion).
  • processing may be performed, it is preferable to process at least the end portion (C portion in FIG. 4B) on the connection end portion (A portion) side.
  • it may be formed on the surface (B portion in FIG. 4B) of the lead frames 101 and 102 at the connection end portion (A portion) between the lead frames 101 and 102 and the insulating portion 103 later.
  • the coarse portion and the silver oxide layer can be easily formed in the C portion having a planar shape even with a low-power laser. Then, when the scattered matter corresponding to the lead frames 101 and 102 scraped off by forming the rough portion of the C portion is scattered, small irregularities due to the scattered matter are formed around the C portion (including the B portion).
  • the optical properties of the periphery of C part deteriorate due to the above scattered matter and the silver oxide layer, for example, the reflectance decreases.
  • the curved portion B can easily absorb the laser beam, and the rough portion and the silver oxide layer can be sufficiently formed even with the low-power laser beam. That is, a rough portion and a silver oxide layer are formed by laser processing at the boundary with the connection surface (B portion) on the lower surface, and then a rough portion and a silver oxide layer are formed by laser processing on the connection surface (B portion). Good.
  • the epoxy resin flows into the rough surface, and the epoxy resin and the lead frame 101. , 102 further increases the adhesion area between the silver-plated surfaces.
  • the adhesion at the interface between the lead frames 101 and 102 and the insulating portion 103 and the reflector portion 104 is greatly improved.
  • the interface between the lead frames 101 and 102 and the epoxy resin of the insulating portion 103 is more closely attached through the chemical bond between the silver oxide layer and the epoxy resin formed at the same time.
  • a metal oxide layer by laser processing it is necessary to generate heat by absorbing the energy of the laser irradiated on the metal surface.
  • the heated metal surface and oxygen present in the air react to form a metal oxide layer on the metal surface.
  • a high laser output is required because it has a higher reflectance and higher thermal conductivity than other metals.
  • the area of the silver oxide layer formed by laser processing is usually larger than the area of the rough portion formed at the same time, it is more difficult to control than the formation of the rough portion.
  • the range of the wavelength of the laser is 400 to 2200 nm, preferably 800 to 1200 nm, in this embodiment, 1060 nm, peak power: 5 kW to 50 kW, preferably 8 kW or higher, and frequency: 10 to 200 kHz. .
  • the silver plating layer on the surface is appropriately oxidized.
  • FIG. 6 is a diagram showing the degree of formation of the recess formed by laser processing and the surrounding silver oxide layer on the lead frame according to the present embodiment.
  • FIG. 6A is a diagram showing the relationship between the distance from the recess formation position by laser processing and the amount of oxygen.
  • FIG. 6B is a diagram illustrating a relationship between the analysis position and the recess formation position in FIG. 6A.
  • the amount of oxygen in the laser processing peripheral portion is high, and a silver oxide layer is formed over a wide range from the rough portion by laser processing to the outside.
  • FIG. 7 is a diagram for explaining the optimum range of laser processing from the relationship between laser frequency and peak power.
  • the laser frequency when the laser frequency is high and the peak power is small, laser processing is not sufficient, and the adhesion between the lead frame and the package resin is insufficient.
  • the silver oxide layer extends beyond the region of the package resin joint of the insulating portion 103 to the silver surface corresponding to the cavity of the lead frames 101 and 102 and the outer lead portion. Many will be formed. For this reason, the resin burrs adhere firmly during subsequent molding, making it difficult to remove.
  • FIG. 8 is a diagram showing an equilibrium oxygen partial pressure curve of silver, silver oxide, and other metal oxides.
  • FIG. 8A shows the equilibrium oxygen partial pressure curves of silver and silver oxide
  • FIG. 8B shows the equilibrium oxygen partial pressure curves of various metals.
  • silver does not form silver oxide at room temperature and atmospheric pressure.
  • FIG. 8B it turns out that it is hard to oxidize compared with metal materials, such as copper, nickel, and iron. From the above, since silver is difficult to form an oxide film, a problem remains in the adhesion between the silver layer of the lead frame 102 and the package resin of the insulating portion 103.
  • 8A is a diagram showing the reflectance of various metals, which is a well-known fact (Source: R.O. Suzuki, T. Ogawa and K. Ono, J. Amer. Ceram. Soc., 82 [ 8] (1999) 2033-38).
  • FIG. 9 is a diagram showing the reaction between silver oxide and package resin.
  • FIG. 9A shows a package resin representing the insulating portion 103 and a laminate of the copper layer, the silver layer, and the silver oxide layer representing the lead frames 101 and 102.
  • a part of the package resin of the insulating portion 103 has an OH group that easily reacts with an inorganic substance.
  • the oxygen atom of Ag 2 O in the silver oxide layer reacts with moisture in the air and comes to have OH groups.
  • the insulating portion 103 and the lead frames 101 and 102 are firmly bonded to each other through chemical bonds via oxygen atoms.
  • the silane coupling agent is contained in the package resin, stronger adhesion can be expected.
  • the silver layer is changed to a silver oxide layer having oxygen atoms by being oxidized, and is thus easily bonded to the package resin.
  • the insulating portion 103 and the lead frames 101 and 102 bonded by chemical bonding can realize more stable adhesion due to a synergistic effect with the anchor effect.
  • connection end portions of the lead frames 101 and 102 may have a linear shape perpendicular to at least one of the front and back surfaces of the lead frames 101 and 102.
  • a directionality (vector) in a direction parallel to at least one of the front and back surfaces of the lead frames 101 and 102 as in the step shape shown in FIG. That is, for example, a slope shape, a curved surface shape, or an arc shape may be used.
  • the lead frames 101 and 102 approach on the front surface side of the lead frames 101 and 102, and the lead frames 101 and 102 on the back surface side of the lead frames 101 and 102. It is better to keep away.
  • the scattered matter of the lead frames 101 and 102 by laser processing becomes easy to adhere to a connection end part, and laser processing becomes easy also to a connection end part.
  • the adhesion of scattered matter includes the case where the scattered matter is simply on the connection end. Moreover, you may remove the scattered material adhering except a connection edge part.
  • the laser irradiation portion is not always in the direction perpendicular to the lead frames 101 and 102 (directly above). Therefore, for example, when the laser beam is irradiated from an oblique direction (X direction in FIG. 4B) with respect to the lead frames 101 and 102, when the laser beam is applied to the portion B in FIG. The B part of 101 does not hit the laser well. That is, since the surface areas of the lead frames 101 and 102 that receive the laser beam are extremely different with respect to the same laser irradiation area, the degree of laser absorption between the lead frame 101 and the lead frame 102 varies greatly.
  • the surface areas of the lead frames 101 and 102 that receive the laser light are comparable with respect to the same laser irradiation area. Therefore, substantially the same level of laser processing is performed on both the C portion of the lead frame 101 and the C portion of the lead frame 102. Therefore, even if laser irradiation is performed from an oblique direction, the degree of laser processing is less likely to vary.
  • Step S1 Lead frame board preparation process
  • Lead frame board used as material of lead frames 101 and 102 uses copper or copper alloy with good heat conduction.
  • Step S2 Lead Frame Processing Step
  • the lead frame is processed from the lead frame plate by etching. Further, instead of etching, the lead frame may be processed by die punching from the lead frame plate.
  • Step S3 Silver plating step
  • the processed lead frame is subjected to nickel plating + copper plating, and then silver plating is performed.
  • the nickel and copper plating is a very thin plating (flash plating).
  • the silver plating after nickel plating + copper plating is a plating having a film thickness of about 1 to 10 ⁇ m. Since silver is expensive, it is preferable to make it as thin as possible.
  • Silver plating uses glossy silver plating, but semi-glossy or matte silver plating may be used. Moreover, nickel plating and copper plating are not necessarily required.
  • Step S4 Silver plating surface processing step Laser irradiation is performed on the silver-plated lead frame to perform processing for roughening and oxidizing the surface of the lead frame.
  • a fiber laser is used for laser processing.
  • the surface roughness (Ra) of the silver plating surface of the lead frame is determined by the energy of the fiber laser.
  • the surface roughness (Ra) is applied to the silver plating surface of the lead frame by laser processing under the conditions of fiber laser (wavelength: 1060 nm, peak power of 5 kW or more, preferably 8 kW or more, frequency: 10 to 200 kHz).
  • a silver oxide layer is formed on a rough surface of 0.1 to 10 ⁇ m and a peripheral portion.
  • the silver plating surface of the lead frame processed with silver plating has a desired surface roughness (Ra): a rough surface of 0.1 to 10 ⁇ m and a silver oxide layer on the periphery.
  • Step S5 Resin Molding Process
  • the resin molding uses transfer molding or injection molding.
  • an epoxy resin is used in this embodiment, the resin material can be changed to another material.
  • silicone resin polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS) resin, liquid crystal polymer (LCP) resin, ABS resin, phenol resin, acrylic resin, PBT resin, etc. Resin or composite resin of resin and inorganic material.
  • Step S6 Thermosetting process
  • the package resin is thermoset to stabilize the chemical and mechanical properties of the package resin. Depending on the type of molding resin and the molding method, this step may be unnecessary.
  • Step S7 Deflash process
  • the package resin may protrude from the insulating portion 103 into a thin burr shape on the light reflecting surface and the back surface of the lead frames 101 and 102.
  • the resin burr is removed by a process such as electrolysis (deflash).
  • the silver oxide layer formed by laser processing exceeds the resin adhesion portion of the lead frames 101 and 102 and reaches the light reflecting surface and back surface of the lead frames 101 and 102, the resin burr and the silver oxide layer are strongly bonded. Therefore, deflashing becomes difficult.
  • the LED package 100 is completed.
  • FIG. 10 is a manufacturing process diagram up to sealing of the sealing resin of the LED package according to the present embodiment.
  • LED package 100 preparation process As shown in FIG. 10A, an LED package 100 having lead frames 101 and 102 having a rough surface formed on a silver-plated surface produced by an LED package manufacturing method is prepared.
  • the following silver plated surfaces (1) to (3) are resin-molded after a rough surface having a surface roughness (Ra) of 0.1-10 ⁇ m is formed by laser processing.
  • a surface roughness (Ra) of 0.1-10 ⁇ m is formed by laser processing.
  • Silver-plated surface of the lead frames 101 and 102 at the connection end portion between the lead frames 101 and 102 and the insulating portion 103 (2) Silver-plated surface between the lead frames 101 and 102 and the outer peripheral connection end portion of the reflector portion 104 3) Silver-plated surfaces at the connecting ends of the lead frames 101 and 102 and the trapezoidal bottom of the reflector 104
  • the LED chip 110 mounting process (see FIG. 10B) As shown in FIG. 10B, the LED chip 110 is placed on the upper surface (front surface) of the lead frame 102 of the LED package 100, and fixed via, for example, a die bonding paste.
  • a die bonding paste made of a heat-resistant / light-resistant resin such as epoxy or silicone, or a metal having higher thermal conductivity can be used.
  • the LED chip 110 is mounted on a substantially central portion of the bottom surface of the LED mounting space (cavity) 105 of the LED package 100. Further, the outer peripheral direction of the LED chip 110 is surrounded by the reflector portion 104.
  • Wire bonding process As shown in FIG. 10C, the anode electrode pad (not shown) of the LED chip 110 placed on the upper surface of the lead frame 102 and the lead frame 101 are wire-bonded by a bonding wire 111. Then, the cathode electrode pad (not shown) of the LED chip 110 and the lead frame 102 are electrically connected by wire bonding with the bonding wire 112.
  • the cavity 105 is filled with a sealing resin 120 containing a fluorescent material so as to cover the LED chip 110 and the bonding wires 111 and 112 disposed in the cavity 105.
  • the LED chip 110 and the bonding wires 111 and 112 disposed in the cavity 105 are sealed with the sealing resin 120.
  • a low-viscosity organic resin for example, a silicone resin
  • the sealing resin 120 contains a fluorescent material that converts the wavelength of light from the LED element.
  • the fluorescent material is variously selected according to the wavelength of light from the light emitting element. For example, when an LED element emitting blue light is used, nitrogen-containing CaO—Al activated with YAG: Ce, Eu and / or Cr is used.
  • An inorganic fluorescent material such as 2 O 3 —SiO 2 is preferably used.
  • Fluorescent substance that converts light from the LED element to a longer wavelength is good in luminous efficiency.
  • the mixed color light that has been wavelength-converted by the LED element and the fluorescent material is preferably white.
  • a silicone material is used as the fluorescent material (wavelength conversion member) that converts the wavelength of light emitted from the LED chip 110.
  • This silicone resin contains (Si ⁇ Al) 6 (O ⁇ N) 8 : Eu as a green phosphor and CaAlSiN 3 : Eu as a red phosphor. Thereby, part of the blue light emitted from the LED chip 110 is converted into red or green light having a longer wavelength than the blue light.
  • silicone resin that does not contain the fluorescent material may be used, or a sealing resin other than the silicone resin may be used.
  • FIG. 11 is a view showing an enlarged photograph of the lead frame of the LED package according to the present embodiment. It can be seen that laser processing is performed on the portion C in FIG. 4B.
  • the first step is performed in one of the first lead frame 102 having one surface (upper surface) on which the LED chip 110 is placed and the second lead frame 101 facing the first lead frame 102.
  • the other surface (lower surface) opposite to the surface (upper surface) of the first lead frame 102 and the boundary surface (C portion) between the connection surface (B portion) where the second lead frame 101 faces.
  • a coarse part and a silver oxide layer are formed.
  • the scattered matter of the lead frame 102 adheres in the first step, covers the connection surface (B part) formed with the silver oxide layer, and the first lead frame 102 and the second lead frame 101 are connected.
  • a package resin (insulating portion 103) to be fixed is formed.
  • planar shapes of the lead frames 101 and 102 and the insulating portion 103 are substantially rectangular, but the shape is not limited to this, and may be, for example, a circle, an ellipse, or a polygon.
  • one LED chip 110 is disposed in the cavity 105, but the number of LED chips may be one or more, and is not limited to this.
  • the name “LED package” is used. However, this is for convenience of explanation, and may be a package for a semiconductor element, a package for an optical semiconductor element, or the like. Moreover, the manufacturing method of an LED package may be called the manufacturing method of an optical semiconductor element.
  • each component constituting the LED package for example, the type of the substrate, the resin sealing method, etc. is not limited to the above-described embodiment.
  • the LED package, LED light-emitting element, and manufacturing method thereof of the present invention are suitable for use in a package on which an LED chip is mounted.
  • it is excellent in reliability and useful for use as a long-life light-emitting device having liquid leakage resistance of a sealing resin.
  • LED package 101 100 LED package 101, 102 Lead frame 103 Insulating part 104 Reflector part 105 Cavity (LED mounting space) 110 LED chip 111, 112 Bonding wire 120 Sealing resin

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un boîtier de diode électroluminescente évitant que de la résine d'étanchéité ne fuie du boîtier, et que du sulfure ne pénètre par perméation à l'intérieur d'une cavité. Ce boîtier de diode électroluminescente comprend : un premier réseau de conducteurs (102), lui-même pourvu d'une première face sur laquelle est placée une diode électroluminescente, l'autre face étant la face située au verso de la première face ; un second réseau de conducteurs (101) ; et de la résine (103) qui est reliée à une section d'extrémité de connexion (Section A) des deux réseaux de conducteurs (101, 102) qui sont opposés l'un à l'autre. Une partie au moins de l'autre face du premier réseau de conducteurs (102) est visible depuis la résine. Une surface dépolie est réalisée sur la section d'extrémité (Section C) au niveau, d'une part du côté de la section d'extrémité de connexion (Section A) de l'autre face du premier réseau de conducteurs (102), et d'autre part de parties au moins de la section d'extrémité de connexion (Section A) par réalisation d'un traitement au laser effectué sur le premier réseau de conducteurs (102).
PCT/JP2012/008434 2012-01-25 2012-12-28 Boîtier de diode électroluminescente, élément électroluminescent à diode électroluminescente, et procédé de fabrication correspondant WO2013111253A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012-012705 2012-01-25
JP2012012705A JP5083472B1 (ja) 2012-01-25 2012-01-25 Ｌｅｄパッケージの製造方法
JP2012-246154 2012-11-08
JP2012246154A JP6038598B2 (ja) 2012-11-08 2012-11-08 Ｌｅｄパッケージ、ｌｅｄ発光素子及びそれらの製造方法

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10326845A (ja) * 1997-03-25 1998-12-08 Mitsui Chem Inc 樹脂パッケージ，半導体装置，および樹脂パッケージの製造方法
JP2002083917A (ja) * 2000-06-28 2002-03-22 Noge Denki Kogyo:Kk 表面に突起を有するリードフレーム、リードフレームの製造方法、半導体装置、および、半導体装置の製造方法
JP2004349497A (ja) * 2003-05-22 2004-12-09 Shinko Electric Ind Co Ltd パッケージ部品及び半導体パッケージ
JP2007234629A (ja) * 2006-02-27 2007-09-13 Matsushita Electric Ind Co Ltd 半導体装置用パッケージ部品とこれを用いた半導体装置
JP2009266931A (ja) * 2008-04-23 2009-11-12 Nec Tokin Corp 固体電解コンデンサ
JP2011176270A (ja) * 2010-01-29 2011-09-08 Toshiba Corp Ｌｅｄパッケージ
JP2011233821A (ja) * 2010-04-30 2011-11-17 Nichia Chem Ind Ltd 発光装置および発光装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10326845A (ja) * 1997-03-25 1998-12-08 Mitsui Chem Inc 樹脂パッケージ，半導体装置，および樹脂パッケージの製造方法
JP2002083917A (ja) * 2000-06-28 2002-03-22 Noge Denki Kogyo:Kk 表面に突起を有するリードフレーム、リードフレームの製造方法、半導体装置、および、半導体装置の製造方法
JP2004349497A (ja) * 2003-05-22 2004-12-09 Shinko Electric Ind Co Ltd パッケージ部品及び半導体パッケージ
JP2007234629A (ja) * 2006-02-27 2007-09-13 Matsushita Electric Ind Co Ltd 半導体装置用パッケージ部品とこれを用いた半導体装置
JP2009266931A (ja) * 2008-04-23 2009-11-12 Nec Tokin Corp 固体電解コンデンサ
JP2011176270A (ja) * 2010-01-29 2011-09-08 Toshiba Corp Ｌｅｄパッケージ
JP2011233821A (ja) * 2010-04-30 2011-11-17 Nichia Chem Ind Ltd 発光装置および発光装置の製造方法

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