WO2013105603A1 - Composition de formation de couche d'arrêt, couche d'arrêt, procédé de production destiné à un substrat de cellule solaire, et procédé de production destiné à un élément de cellule solaire - Google Patents

Composition de formation de couche d'arrêt, couche d'arrêt, procédé de production destiné à un substrat de cellule solaire, et procédé de production destiné à un élément de cellule solaire Download PDF

Info

Publication number
WO2013105603A1
WO2013105603A1 PCT/JP2013/050306 JP2013050306W WO2013105603A1 WO 2013105603 A1 WO2013105603 A1 WO 2013105603A1 JP 2013050306 W JP2013050306 W JP 2013050306W WO 2013105603 A1 WO2013105603 A1 WO 2013105603A1
Authority
WO
WIPO (PCT)
Prior art keywords
barrier layer
forming
composition
metal
mass
Prior art date
Application number
PCT/JP2013/050306
Other languages
English (en)
Japanese (ja)
Inventor
明博 織田
吉田　誠人
野尻　剛
倉田　靖
岩室　光則
茂 野部
悠平 岡田
Original Assignee
日立化成株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立化成株式会社 filed Critical 日立化成株式会社
Priority to JP2013518614A priority Critical patent/JP5339011B1/ja
Publication of WO2013105603A1 publication Critical patent/WO2013105603A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a barrier layer forming composition, a barrier layer, a method for manufacturing a solar cell substrate, and a method for manufacturing a solar cell element.
  • a p-type silicon substrate having a texture structure formed on the light receiving surface (surface) is prepared so as to promote the light confinement effect, and then a mixed gas of phosphorus oxychloride (POCl 3 ), nitrogen and oxygen.
  • a tens of minutes of treatment is performed at 800 ° C. to 900 ° C. in an atmosphere to form an n-type diffusion layer uniformly on the surface of the p-type silicon substrate.
  • an electrode paste such as silver (Ag) on the light receiving surface and an electrode paste such as aluminum (Al) on the back side
  • the solar cell element was obtained by firing.
  • a method of forming such a back electrode type solar cell will be described.
  • a barrier layer is formed on the entire light receiving surface and back surface of the n-type silicon substrate.
  • the barrier layer has a function of suppressing the diffusion of the dopant into the silicon substrate.
  • a part of the barrier layer on the back surface of the silicon substrate is removed to form an opening.
  • a p + -type diffusion layer is formed only in a region corresponding to the opening.
  • a barrier layer is formed again on the entire back surface of the silicon substrate.
  • a part of the barrier layer in a region different from the region where the p + -type diffusion layer is formed is removed to form an opening, and an n-type dopant is diffused from the opening to the back surface of the silicon substrate.
  • a + type diffusion layer is formed.
  • a p + -type diffusion layer and an n + -type diffusion layer are formed on the back surface.
  • a back electrode type solar cell is completed by forming a texture structure, an antireflection film, a passivation film, an electrode, and the like.
  • barrier layer As the barrier layer, a method using an oxide film formed on the surface of a silicon substrate by a thermal oxidation method has been proposed (see, for example, JP-A-2002-329880). On the other hand, a method for forming a barrier layer using a masking paste containing a SiO 2 precursor has also been proposed (see, for example, Japanese Patent Application Laid-Open No. 2007-49079).
  • the method of generating an oxide film on the surface of a silicon substrate by the thermal oxidation method described in Japanese Patent Application Laid-Open No. 2002-329880 described above has a problem that the manufacturing cost is high because the throughput is long.
  • it is intended to physically prevent diffusion of a donor element or an acceptor element, and further a barrier made of SiO 2. Since it is difficult to form a dense film in the layer, pinholes are easily formed. Therefore, it is difficult to sufficiently prevent diffusion of the dopant into the substrate.
  • the present invention has been made in view of the above conventional problems, and a barrier layer forming composition capable of sufficiently preventing the diffusion of a donor element or an acceptor element into a semiconductor substrate and suppressing the surface roughness of the semiconductor substrate. It is an object to provide an object, a barrier layer formed using the same, a method for manufacturing a solar cell substrate using the same, and a method for manufacturing a solar cell element.
  • ⁇ 1> Contains an alkaline earth metal or a metal compound containing an alkali metal, a dispersion medium, and one or more specific compounds selected from the group consisting of metal alkoxides, silicon alkoxides, silicate oligomers, and silicone oils.
  • a composition for forming a barrier layer containing an alkaline earth metal or a metal compound containing an alkali metal, a dispersion medium, and one or more specific compounds selected from the group consisting of metal alkoxides, silicon alkoxides, silicate oligomers, and silicone oils.
  • composition for forming a barrier layer according to ⁇ 1> wherein the specific compound includes one or more selected from the group consisting of silicon alkoxide, methyl silicate oligomer, and ethyl silicate oligomer.
  • ⁇ 3> The barrier layer according to ⁇ 1> or ⁇ 2>, wherein the specific compound includes silicon alkoxide, and the silicon alkoxide includes one or more selected from the group consisting of tetramethoxysilane and tetraethoxysilane. Forming composition.
  • composition for forming a barrier layer according to any one of ⁇ 1> to ⁇ 3>, wherein the content of the specific compound in the nonvolatile component is 0.5% by mass or more and 50% by mass or less. .
  • the alkaline earth metal or the metal compound containing an alkali metal is selected from the group consisting of magnesium, calcium, sodium, potassium, lithium, rubidium, cesium, beryllium, strontium, barium, and radium as the metal element.
  • the alkaline earth metal or the metal compound containing an alkali metal is selected from magnesium oxide, calcium oxide, potassium oxide, magnesium carbonate, calcium carbonate, magnesium sulfate, calcium sulfate, calcium nitrate, magnesium hydroxide, and calcium hydroxide.
  • composition for forming a barrier layer according to ⁇ 8> wherein the organic binder includes one or more selected from the group consisting of an acrylic resin, a butyral resin, and a cellulose resin.
  • the dispersion medium contains one or more selected from the group consisting of water, alcohol solvents, ether solvents, glycol monoether solvents, and terpene solvents. 2.
  • ⁇ 11> Any one of the above ⁇ 1> to ⁇ 10>, wherein a content ratio of the alkaline earth metal or the metal compound containing the alkali metal in the nonvolatile component is 0.5% by mass or more and less than 100% by mass 2.
  • composition for forming a barrier layer according to any one of ⁇ 1> to ⁇ 11>, wherein the viscosity at 25 ° C. is 0.5 Pa ⁇ s or more and 400 Pa ⁇ s or less.
  • ⁇ 13> The barrier layer according to ⁇ 1> to ⁇ 12>, wherein a content of the alkaline earth metal or the metal compound containing the alkali metal in the nonvolatile component is 10% by mass to 55% by mass. Forming composition.
  • composition for forming a barrier layer according to any one of ⁇ 1> to ⁇ 13>, wherein the viscosity at 25 ° C. is 40 Pa ⁇ s or more and 200 Pa ⁇ s or less.
  • the alkaline earth metal or the metal compound containing an alkali metal includes one or more selected from the group consisting of calcium oxide and calcium carbonate
  • a barrier layer which is a dried body of the composition for forming a barrier layer according to any one of ⁇ 1> to ⁇ 17>.
  • ⁇ 20> The method for producing a solar cell substrate according to ⁇ 19>, wherein the method for applying the barrier layer forming composition is a printing method or an inkjet method.
  • a method for producing a solar cell element comprising a step of forming an electrode on a diffusion layer of a solar cell substrate obtained by the production method according to ⁇ 19> or ⁇ 20>.
  • a barrier layer forming composition that can sufficiently prevent the diffusion of a donor element or an acceptor element into a semiconductor substrate and suppress the surface roughness of the semiconductor substrate, a barrier layer formed using the composition, The manufacturing method of the board
  • the composition for forming a barrier layer of the present invention will be described, and then the method for manufacturing a solar cell substrate and the method for manufacturing a solar cell element using the composition for forming a barrier layer will be described.
  • the term “process” is not limited to an independent process, and is included in the term if the purpose of the process is achieved even when it cannot be clearly distinguished from other processes.
  • “ ⁇ ” indicates a range including the numerical values described before and after the values as the minimum value and the maximum value, respectively.
  • the amount of each component in the composition is the sum of the plurality of substances present in the composition unless there is a specific indication when there are a plurality of substances corresponding to each component in the composition. Means quantity.
  • the donor element or the acceptor element may be referred to as a dopant.
  • the barrier layer in the present invention includes not only the case where the barrier layer is formed on the entire surface when the semiconductor substrate is observed as a plan view, but also the case where the barrier layer is formed on a part thereof.
  • the composition for forming a barrier layer of the present invention includes an alkaline earth metal or a metal compound containing an alkali metal (hereinafter also referred to as “specific alkali compound”), a dispersion medium, a metal alkoxide, a silicon alkoxide, a silicate oligomer, and a silicone. And one or more specific compounds selected from the group consisting of oils.
  • the composition for forming a barrier layer of the present invention inhibits diffusion of a donor element or an acceptor element, which is a dopant, into a semiconductor substrate.
  • the donor element and the acceptor element are diffused in the region. It can be sufficiently prevented. Therefore, it is possible to selectively form a doping region in the semiconductor substrate. The reason for this can be considered as follows.
  • the specific alkali compound is preferably a basic compound.
  • the specific alkali compound of the basic compound undergoes an acid-base reaction with the doping compound, and this acid-base reaction is highly reactive, thereby more effectively preventing the donor element or acceptor element from diffusing into the semiconductor substrate. .
  • the specific alkali compound is preferably a metal compound that is thermally stable even at a high temperature of 500 ° C. or higher.
  • the basic metal compound an alkaline earth metal or a metal compound containing an alkali metal is preferable.
  • An alkaline earth metal or a metal compound containing an alkali metal does not act as a carrier recombination center in a semiconductor substrate when it is dissolved in the semiconductor substrate, thereby suppressing the problem of reducing the conversion efficiency of the solar cell substrate. be able to.
  • the barrier layer-forming composition of the present invention contains one or more specific compounds selected from the group consisting of metal alkoxides, silicon alkoxides, silicate oligomers, and silicone oils.
  • the composition for forming a barrier layer containing the specific compound By using the composition for forming a barrier layer containing the specific compound, the erosion of the semiconductor substrate by the specific alkali compound is suppressed in the barrier layer forming step, and the occurrence of surface roughness of the semiconductor substrate can be suppressed.
  • damage to the silicon substrate, which is a semiconductor substrate can be suppressed, and a decrease in power generation characteristics of a solar cell element using the semiconductor substrate can be suppressed.
  • the composition for forming a barrier layer of the present invention contains an alkaline earth metal or a metal compound containing an alkali metal.
  • the alkaline earth metal or the metal compound containing the alkali metal may be liquid or solid at room temperature (about 20 ° C.). From the viewpoint that it is necessary to be chemically stable even at a high temperature in order to maintain a sufficient barrier layer performance even at a high temperature, it is preferably a solid at a high temperature (for example, 500 ° C. or higher) at which heat is diffused.
  • the alkaline earth metal or the metal compound containing an alkali metal includes an alkaline earth metal or a metal oxide containing an alkali metal, and an alkaline earth metal or a metal salt containing an alkali metal. .
  • the metal compound containing an alkaline earth metal or an alkali metal is not particularly limited, and is preferably a material that changes to a basic compound at a high temperature of 700 ° C. or higher at which a donor element or an acceptor element is thermally diffused.
  • the metal compound contains at least one selected from the group consisting of magnesium, calcium, sodium, potassium, lithium, rubidium, cesium, beryllium, strontium, barium and radium as a metal element. It is more preferable that it contains at least one selected from the group consisting of magnesium, calcium, barium, potassium and sodium, and more preferably contains at least one selected from the group consisting of magnesium, calcium and potassium.
  • the viewpoint of low toxicity and availability it is particularly preferable to contain one or more selected from the group consisting of magnesium and calcium.
  • the group consisting of metal oxides, metal carbonates, metal nitrates, metal sulfates and metal hydroxides containing one or more selected from the group consisting of these metal elements It is preferable that it is 1 or more types selected, and it is more preferable that it is 1 or more types selected from the group which consists of a metal oxide, a metal carbonate, and a metal hydroxide.
  • metal oxides such as sodium oxide, potassium oxide, lithium oxide, calcium oxide, magnesium oxide, rubidium oxide, cesium oxide, beryllium oxide, strontium oxide, barium oxide, radium oxide, and complex oxides thereof; sodium hydroxide, Metal hydroxides such as potassium hydroxide, lithium hydroxide, calcium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, beryllium hydroxide, strontium hydroxide, barium hydroxide, radium hydroxide; sodium carbonate, carbonic acid Metal carbonates such as potassium, lithium carbonate, calcium carbonate, magnesium carbonate, rubidium carbonate, cesium carbonate, beryllium carbonate, strontium carbonate, barium carbonate, radium carbonate; sodium nitrate, potassium nitrate, lithium nitrate, calcium nitrate Metal nitrates such as magnesium nitrate, rubidium nitrate, cesium nitrate, beryllium nitrate, strontium oxide,
  • sodium carbonate, sodium oxide, potassium carbonate, potassium oxide, calcium carbonate, calcium hydroxide, calcium oxide, magnesium carbonate, magnesium hydroxide, magnesium sulfate, calcium sulfate It is preferable to use at least one selected from calcium nitrate and magnesium oxide, magnesium oxide, calcium oxide, magnesium carbonate, calcium carbonate, magnesium sulfate, calcium sulfate, calcium nitrate, potassium oxide, magnesium hydroxide, calcium stearate, And at least one selected from the group consisting of calcium hydroxide, calcium carbonate, calcium oxide, potassium oxide, calcium hydroxide, magnesium carbonate, and magnesium oxide. More preferably to use at least one selected from Neshiumu, calcium carbonate, it is particularly preferable to use at least one selected from calcium oxide.
  • the base strength of an alkaline earth metal or a metal compound containing an alkali metal or a compound obtained by heat-treating it in air or in an inert atmosphere at 800 ° C. or higher is preferably 12.2 or higher, and 17.2 or higher. It is more preferable that it is 26.5 or more.
  • 800 ° C. or higher is a temperature that can be adopted as a temperature for actually diffusing a donor element or an acceptor element and reflects an actual use environment.
  • the surface area and particle diameter of an alkaline earth metal or a metal compound containing an alkali metal are the same, the higher the base strength, the more the barrier ability of the barrier layer formed using it, i.e., the diffusion of donor and acceptor elements. Increases ability to inhibit.
  • the base strength here is an acidity function H ⁇ using a Hammett indicator and can be measured by a change in color when the indicator is adsorbed. Specifically, when 2,4,6-trinitroaniline is used as an indicator, H ⁇ is 12.2 or more when yellow changes to red-orange, and when 2,4-dinitroaniline is used, it changes from yellow to purple. When H ⁇ is 15.0 or higher and 4-chloro-2-nitroaniline is used, the color changes from yellow to orange. When H ⁇ is 18.4 or higher and 4-chloroaniline is used, the color changes from yellow to pink. In this case, H ⁇ is 26.5 or more.
  • the surface of the alkaline earth metal or the metal compound containing the alkali metal may be surface-treated with a metal oxide such as silicon oxide, zirconium oxide, zinc oxide, titanium oxide, or aluminum oxide.
  • a metal oxide such as silicon oxide, zirconium oxide, zinc oxide, titanium oxide, or aluminum oxide.
  • the particle diameter of the particles is preferably 30 ⁇ m or less. It is more preferably from 01 ⁇ m to 30 ⁇ m, further preferably from 0.02 ⁇ m to 10 ⁇ m, and particularly preferably from 0.03 ⁇ m to 5 ⁇ m.
  • the particle diameter is 30 ⁇ m or less, the donor element or the acceptor element is easily diffused (doped) into a desired region of the semiconductor substrate.
  • the alkaline earth metal or the metal compound containing an alkali metal may be dissolved in the dispersion medium.
  • the particle diameter represents a volume average particle diameter, and can be measured with a laser scattering diffraction particle size distribution measuring apparatus or the like.
  • the volume average particle diameter can be calculated based on the Mie scattering theory by detecting the relationship between the scattered light intensity and the angle of the laser light applied to the particles.
  • the method for obtaining particles of a specific alkali compound having a particle size of 30 ⁇ m or less is not particularly limited, and can be obtained by, for example, pulverization.
  • a grinding method a dry grinding method and a wet grinding method can be employed.
  • a jet mill, a vibration mill, a ball mill, or the like can be employed.
  • a wet pulverization method a bead mill, a ball mill or the like can be used.
  • the lifetime of the carriers in the semiconductor substrate may be reduced. It is preferable to select a material with little influence.
  • the material of the container and the like that are preferably used during pulverization include alumina and partially stabilized zirconia.
  • a gas phase oxidation method, a hydrolysis method, or the like can be used in addition to the pulverization method.
  • the particles of the specific alkali compound are particles made of a compound other than an alkaline earth metal or a metal compound containing an alkali metal (for example, silicon oxide particles) as a carrier, and an alkaline earth metal or alkali is formed on the surface of the carrier.
  • a material in which a metal compound containing a metal is coated or dispersedly supported may be used.
  • it is possible to increase the effective surface area of the alkaline earth metal or the metal compound containing the alkali metal it is possible to increase the effective surface area of the alkaline earth metal or the metal compound containing the alkali metal, and there is a possibility that the property of inhibiting the diffusion of the donor element or the acceptor element into the semiconductor substrate may be improved. .
  • the carrier is preferably a material having a BET specific surface area of 10 m 2 / g or more, and examples thereof include particles of inorganic materials such as SiO 2 , activated carbon, carbon fiber, and zinc oxide.
  • the shape of the particles of the specific alkali compound is not particularly limited, and may be any of a substantially spherical shape, a flat shape, a scale shape, a block shape, an oval shape, a plate shape, a sea gall shape, a porous sphere shape, and a rod shape.
  • the shape of the particles can be confirmed by an electron microscope or the like.
  • the content of the alkaline earth metal or the metal compound containing the alkali metal in the composition for forming the barrier layer is determined in consideration of the coating property, the diffusibility of the donor element or the acceptor element, and the like.
  • the content of the alkaline earth metal or the metal compound containing an alkali metal in the barrier layer forming composition is preferably 0.1% by mass or more and 95% by mass or less, and more preferably 0.1% by mass or more. It is more preferably 80% by mass or less, further preferably 0.1% by mass or more and 70% by mass or less, particularly preferably 2% by mass or more and 60% by mass or less, and 10% by mass or more and 55% by mass or less.
  • the content of the alkaline earth metal or the metal compound containing the alkali metal is 0.1% by mass or more, the diffusion of the donor element or the acceptor element into the semiconductor substrate can be sufficiently inhibited.
  • the content is 95% by mass or less, the dispersibility of the alkaline earth metal or the metal compound containing the alkali metal in the barrier layer forming composition is improved, and the coating property to the substrate is improved.
  • the content of the alkaline earth metal and the metal compound containing the alkali metal in the total nonvolatile components of the barrier layer forming composition is preferably 0.5% by mass or more and less than 100% by mass, preferably 5% by mass. It is more preferably 70% by mass or less, and further preferably 10% by mass or more and 55% by mass or less. Within the above range, a sufficient barrier layer control effect tends to be obtained.
  • the non-volatile component refers to a component that does not volatilize when heat-treated at 600 ° C. or higher and 1500 ° C. or lower.
  • the non-volatile component can be obtained by a thermogravimetric analyzer TG, and the total content of the alkaline earth metal and the metal compound containing the alkali metal in the non-volatile component is determined by ICP emission spectroscopy / mass spectrometry (ICP-MS). Method) and atomic absorption method.
  • the composition for forming a barrier layer of the present invention contains one or more specific compounds selected from the group consisting of metal alkoxides, silicon alkoxides, silicate oligomers, and silicone oils.
  • specific compounds selected from the group consisting of metal alkoxides, silicon alkoxides, silicate oligomers, and silicone oils.
  • the roughness of the surface of the semiconductor substrate is the arithmetic average roughness (Ra), maximum height (Ry), ten-point average roughness (Rz), and average interval of irregularities (Sm) in each part extracted at random from the surface of the semiconductor substrate. ),
  • the arithmetic average roughness (Ra) of the obtained semiconductor substrate is preferably 0.1 ⁇ m or less, more preferably 0.05 ⁇ m or less, and still more preferably 0.01 ⁇ m or less.
  • Ra is 0.1 ⁇ m or less, the characteristics of a solar cell using the same tend not to be deteriorated.
  • the content of the specific compound in all nonvolatile components of the barrier layer forming composition is preferably 0.5% by mass or more and 50% by mass or less, and more preferably 1% by mass or more and 25% by mass or less. Preferably, it is 5 mass% or more and 20 mass% or less.
  • the metal alkoxide is a compound obtained by reacting a specific metal atom and an alcohol, and is preferably represented by the following general formula (1).
  • M is Li, Na, K, Mg, Ca, Sr, Ba, La, Ti, B, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co
  • a is a positive number from 1 to 7 depending on the valence of the metal M
  • R 1 excludes the OH group of the alcohol Residue.
  • Examples of the alcohol that forms the metal alkoxide include those represented by the following formula (2).
  • R 1 represents a saturated or unsaturated hydrocarbon group having 1 to 6 carbon atoms, or a saturated or saturated group having 2 to 20 carbon atoms substituted with an alkoxy group having 1 to 6 carbon atoms.
  • An unsaturated hydrocarbon group is a saturated or unsaturated hydrocarbon group having 1 to 6 carbon atoms, or a saturated or saturated group having 2 to 20 carbon atoms substituted with an alkoxy group having 1 to 6 carbon atoms. An unsaturated hydrocarbon group.
  • the saturated or unsaturated hydrocarbon group having 1 to 6 carbon atoms represented by R 1 may be linear, branched or cyclic. Moreover, it is preferable that it is a saturated hydrocarbon group.
  • R 1 is a saturated or unsaturated hydrocarbon group having 1 to 6 carbon atoms
  • examples of the alcohol represented by the formula (2) include methanol, ethanol, 1-propanol 2-propanol, butanol, amyl alcohol, cyclohexanol and the like.
  • examples of the alcohol represented by the formula (2) include methoxymethanol, methoxyethanol, Examples thereof include ethoxymethanol, ethoxyethanol, methoxypropanol, ethoxypropanol, and propoxypropanol.
  • the silicon alkoxide is preferably represented by the following formula (3).
  • R 2 represents a methyl group, a phenyl group, a vinyl group, an epoxy group, a styryl group, a methacryl group, an acrylic group, an amino group, a ureido group, a mercapto group, a sulfide group or an isocyanate group
  • R 3 Represents a methyl group, an ethyl group or a propyl group, and n represents 0 to 3.
  • R 2 is preferably a methyl group or a phenyl group
  • R 3 is preferably a methyl group or an ethyl group.
  • n is preferably 0 to 2, more preferably 0 or 1, and still more preferably 0.
  • the silicon alkoxide it is preferable to use one or more selected from the group consisting of tetraethoxysilane, tetramethoxysilane, methyltrimethoxysilane, and methyltriethoxysilane, and tetraethoxysilane and tetramethoxysilane. It is more preferable to use one or more selected from the group consisting of Since tetraethoxysilane and tetramethoxysilane are rich in reactivity, it is easy to form a silicon oxide layer at the interface between the semiconductor substrate and the specific alkali compound, and to suppress surface roughness of the semiconductor substrate.
  • silicon alkoxide is preferable from the viewpoint of suppressing surface roughness of the semiconductor substrate.
  • Silicon alkoxide may be used in the form of a partially polymerized silicate oligomer or silicone oil. That is, you may use in the state which the hydrolysis and polycondensation of silicon alkoxide advanced.
  • Catalysts include inorganic acids such as hydrochloric acid, nitric acid, sulfuric acid, boric acid, phosphoric acid, hydrofluoric acid; and formic acid, acetic acid, propionic acid, butyric acid, oleic acid, linoleic acid, salicylic acid, benzoic acid, phthalic acid, oxalic acid And organic acids such as lactic acid and succinic acid.
  • bases such as ammonia and an amine, as a catalyst.
  • An alkaline earth metal or a metal compound containing an alkali metal may also serve as a catalyst.
  • the silicate oligomer here is a compound represented by Si n O n-1 (OR) 2 (n + 1) obtained by hydrolysis and polycondensation of silicon alkoxide [R represents a methyl group, an ethyl group or a propyl group, n is preferably an integer of 3 to 10.
  • the silicate oligomer may be dissolved or dispersed in an alcohol solvent such as methanol, ethanol, propanol, or butanol.
  • silicate oligomer or silicone oil examples include silicates manufactured by Tama Chemical Co., Ltd. (silicate 40, silicate 45, M silicate 51, etc.), and silicates manufactured by Colcoat Co., Ltd. (methyl silicate 51, methyl silicate 53A, ethyl silicate 40).
  • Silicate oligomers such as ethyl silicate 48) and EMS-485, methyl silicone oils such as polydimethylsiloxane, silicone oils such as methylphenyl silicone oil, methyl hydrogen silicone oil, and modified silicone oil.
  • the inclusion of one or more selected from the group consisting of silicon alkoxide, methyl silicate oligomer and ethyl silicate oligomer is preferable because it tends to suppress surface roughness without reducing barrier performance.
  • the barrier layer forming composition of the present invention contains a dispersion medium.
  • the dispersion medium is a medium in which the alkaline earth metal or the metal compound containing the alkali metal is dispersed or dissolved in the composition.
  • the solvent examples include acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl isopropyl ketone, methyl-n-butyl ketone, methyl isobutyl ketone, methyl-n-pentyl ketone, methyl-n-hexyl ketone, diethyl ketone, Ketone solvents such as propyl ketone, diisobutyl ketone, trimethylnonanone, cyclohexanone, cyclopentanone, methylcyclohexanone, 2,4-pentanedione, acetonylacetone; diethyl ether, methyl ethyl ether, methyl-n-propyl ether, diisopropyl Ether, tetrahydrofuran, methyltetrahydrofuran, dioxane, dimethyldioxane, ethylene glycol dimethyl ether, ethylene
  • Alcohol solvents ethylene glycol monomethyl ether, ethylene glycol monoethyl ether (cellosolve), ethylene glycol Nophenyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol mono-n-butyl ether, diethylene glycol mono-n-hexyl ether, ethoxytriglycol, tetraethylene glycol mono-n-butyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl Glycol monoether solvents such as ether, dipropylene glycol monoethyl ether, tripropylene glycol monomethyl ether; ⁇ -terpinene, ⁇ -terpineol, myrcene, alloocimene, limonene, dipentene, ⁇ -pinene, ⁇ -pinene, terpineol, carvone, Terpene solvents such as osymene and ferrand
  • the dispersion medium is preferably water, an alcohol solvent, a glycol monoether solvent, or a terpene solvent, and is water, alcohol, cellosolve, ⁇ -terpineol, diethylene glycol monoester.
  • N-Butyl ether or diethylene glycol mono-n-butyl ether is preferred, and water, alcohol, ⁇ -terpineol or cellosolve are preferred.
  • the content of the dispersion medium in the barrier layer forming composition is determined in consideration of the coating property and the dopant concentration.
  • the content is preferably 5% by mass or more and 99% by mass or less. It is more preferably 20% by mass or more and 95% by mass or less, and further preferably 40% by mass or more and 90% by mass or less.
  • the barrier layer-forming composition of the present invention preferably contains an organic binder.
  • the organic binder By containing the organic binder, the alkaline earth metal or the metal compound containing the alkali metal is bound to each other at a high temperature, and the alkaline earth metal or the metal compound containing the alkali metal is bound to the semiconductor substrate. It becomes easy to make.
  • organic binder examples include polyvinyl alcohol; polyacrylamide resin; polyvinyl amide resin; polyvinyl pyrrolidone resin; polyethylene oxide resin; polysulfone resin; acrylamide alkyl sulfone resin; cellulose derivatives such as cellulose ether, carboxymethyl cellulose, hydroxyethyl cellulose, and ethyl cellulose; Starch, starch derivative; sodium alginate; xanthan; guar, gua derivative; scleroglucan, scleroglucan derivative; tragacanth, tragacanth derivative; dextrin, dextrin derivative; (meth) acrylic acid resin; alkyl (meth) (Meth) acrylic acid ester resins such as acrylate resins and dimethylaminoethyl (meth) acrylate resins; Tajien resin; a styrene resin; butyral resin; and may select these copolymers as appropriate.
  • an acrylic acid resin, a butyral resin, or a cellulose derivative is included from a viewpoint of decomposability and prevention of dripping at the time of screen printing. These are used singly or in combination of two or more.
  • the molecular weight of the organic binder is not particularly limited, and it is desirable to adjust appropriately in view of the desired viscosity as the composition.
  • the content rate in the case of containing an organic binder is 0.5 mass% or more and 30 mass% or less in the composition for barrier layer formation, and it is 3 mass% or more and 25 mass% or less. More preferably, it is 3 mass% or more and 20 mass% or less.
  • the mass ratio of the total content of the alkaline earth metal and the metal compound containing the alkali metal to the total content of the organic binder (alkaline earth metal and alkali metal metal compound) / (organic binder) is 99.9. /0.1 to 0.1 / 99.9 is preferable, and 99/1 to 20/80 is more preferable.
  • a dispersion medium in which an organic binder is dissolved may be used as the dispersion medium and the organic binder.
  • composition for barrier layer formation may use isobornyl cyclohexanol exemplified as a solvent together with the organic binder or as a material replacing the organic binder.
  • Isobornylcyclohexanol is commercially available as “Telsolve® MTPH” (trade name, manufactured by Nippon Terpene Chemical Co., Ltd.).
  • Isobornylcyclohexanol has a high boiling point of 308 ° C to 318 ° C, and when it is removed from the barrier layer, it does not need to be degreased by firing like an organic binder, but must be vaporized by heating. Can do.
  • the content of isobornylcyclohexanol is 0.5% by mass to 85% by mass in the total mass of the composition for forming a barrier layer. It is preferably 1% by mass to 80% by mass, more preferably 2% by mass to 80% by mass.
  • the composition for forming a barrier layer is one or more specific compounds selected from the group consisting of an alkaline earth metal or an alkali metal-containing metal compound, a dispersion medium, a metal alkoxide, a silicon alkoxide, a silicate oligomer, and a silicone oil.
  • various additives such as a thickener, a wetting agent, a surfactant, an inorganic powder, and a thixotropic agent may be contained as necessary.
  • the surfactant examples include nonionic surfactants, cationic surfactants, and anionic surfactants.
  • nonionic surfactants or cationic surfactants are preferable because impurities such as heavy metals are not brought into the semiconductor device.
  • silicon surfactants, fluorine surfactants and hydrocarbon surfactants are exemplified as nonionic surfactants, and since they are rapidly baked during heating such as diffusion, hydrocarbon surfactants are preferable.
  • hydrocarbon-based surfactant examples include ethylene oxide-propylene oxide block copolymers, acetylene glycol compounds, and the like, and acetylene glycol compounds are more preferable because variations in resistance values of semiconductor devices are further reduced.
  • Examples of the inorganic powder include silicon oxide, silicon nitride, silicon oxide, silicon carbide powder and the like.
  • the barrier layer forming composition may contain a thixotropic agent.
  • a thixotropic property can be easily controlled, and a barrier layer forming composition for screen printing having a viscosity suitable for screen printing and a barrier layer forming composition for ink jet having a viscosity suitable for ink jet printing are provided. Can be configured. Furthermore, since the thixotropy is controlled, it is possible to suppress bleeding and sagging from the printed pattern of the barrier layer forming composition during printing.
  • thixotropic agents polyether compounds, fatty acid amide, organic filler, inorganic filler, hydrogenated castor oil, urea urethane amide, bio gum, guar gum, locust bean gum, carrageenan, pectin, agar, ⁇ -glucan, tamarind seed gum, psyllium seed gum , Polyvinyl pyrrolidone, silicone-based thickening gelling agent and oil-based gelling agent (trade name: Gelol (manufactured by Nippon Nippon Chemical Co., Ltd.)).
  • the organic binder described above may also serve as a thixotropic agent. Examples of such a material include ethyl cellulose.
  • the composition for forming a barrier layer of the present invention does not contaminate the semiconductor substrate, that is, from the viewpoint of suppressing carrier recombination in the semiconductor substrate, the content of iron, tungsten, gold, nickel, chromium, manganese, etc.
  • it is preferably 10% by mass or less, more preferably 5% by mass or less, and further preferably 1% by mass or less.
  • the viscosity of the barrier layer forming composition is not particularly limited. Specifically, the viscosity measured at 25 ° C. with an E-type viscometer at a rotational speed of 0.5 rpm to 5 rpm is preferably 0.5 Pa ⁇ s to 400 Pa ⁇ s, preferably 40 Pa ⁇ s to 200 Pa ⁇ s. It is more preferable that When the barrier layer forming composition has a viscosity of 0.5 Pa ⁇ s or more, liquid dripping hardly occurs when applied to a semiconductor substrate, and when it is 400 Pa ⁇ s or less, a fine coating pattern can be formed. Become.
  • the composition for forming a barrier layer of the present invention is one or more selected from the group consisting of an alkaline earth metal or a metal compound containing an alkali metal, a dispersion medium, a metal alkoxide, a silicon alkoxide, a silicate oligomer, and a silicone oil.
  • a component added as necessary can be obtained by mixing using a blender, a mixer, a mortar, or a rotor.
  • the heating temperature at this time can be, for example, 30 ° C. to 100 ° C.
  • the barrier layer forming composition is formed on a semiconductor substrate to form a patterned barrier layer, and the barrier layer on the semiconductor substrate is formed. And a step of diffusing a donor element or an acceptor element in a portion where the diffusion layer is not formed to partially form a diffusion layer in the semiconductor substrate.
  • the manufacturing method of the solar cell element of this invention includes the process of forming an electrode on the diffusion layer of the board
  • FIG. 1 is a schematic cross-sectional view conceptually showing an example of a manufacturing process of a solar cell substrate and a solar cell element of the present invention.
  • FIG. 1 demonstrates a back electrode type solar cell substrate and a solar cell element
  • the composition for forming a barrier layer of the present invention can be applied to any type of solar cell substrate and solar cell element.
  • a selective emitter type and a double-sided light receiving type can be exemplified.
  • a diffusion layer having a dopant concentration higher than that of other regions is formed immediately below the electrode on the light receiving surface side.
  • the barrier layer forming composition of the present invention can be used to form the high concentration diffusion layer region.
  • finger bars and bus bars are formed on both surfaces as electrodes, an n + type diffusion layer is formed on one surface of the semiconductor substrate, and a p + type diffusion layer is formed on the other surface.
  • the barrier layer forming composition of the present invention can be used.
  • an alkaline solution is applied to a silicon substrate which is an n-type semiconductor substrate 10 to remove a damaged layer, and a texture structure is obtained by etching.
  • the damaged layer on the surface of the silicon substrate generated when slicing from the ingot is removed with 20% by mass caustic soda.
  • the silicon substrate is etched with a mixed solution of 1% by mass caustic soda and 10% by mass isopropyl alcohol to form a texture structure on the n-type semiconductor substrate 10 (the description of the texture structure is omitted in the figure).
  • the solar cell element by forming a texture structure on the light-receiving surface (front surface) side of the n-type semiconductor substrate 10, a light confinement effect is promoted, and high efficiency is achieved.
  • the barrier layer forming composition 11 of the present invention is applied to the front surface (that is, the light receiving surface) of the n-type semiconductor substrate 10 and the back surface opposite to the light receiving surface.
  • the application method is not limited, and examples thereof include a printing method, a spin method, a brush coating, a spray method, a doctor blade method, a roll coater method, and an ink jet method, and it is preferable to use a printing method or an ink jet method.
  • the composition for forming a barrier layer there is no particular limitation as application amount of the composition for forming a barrier layer, it is possible to 0.01 g / m 2 or more 100 g / m 2 or less and preferably, 0.1 g / m 2 or more 20 g / m 2 or less Is more preferable.
  • a drying step for volatilizing the dispersion medium contained in the composition may be necessary after application.
  • drying is performed at a temperature of about 80 ° C. to 300 ° C. for about 1 to 10 minutes when using a hot plate, and about 10 to 30 minutes when using a dryer or the like.
  • This drying condition depends on the content of the dispersion medium of the barrier layer forming composition and is not particularly limited to the above condition in the present invention.
  • the barrier layer can be obtained as a dried product obtained by drying the barrier layer forming composition.
  • the patterned barrier layer can be obtained by applying the barrier layer forming composition 11 in a pattern in the case of a printing method, an inkjet method or the like.
  • the barrier layer forming composition 11 is applied to the entire surface, it is partially removed by etching or the like.
  • the barrier layer is obtained.
  • coating diffusion materials 12 and 13 for forming an n + type diffusion layer and a p + type diffusion layer are applied.
  • an n + -type diffusion layer 14 and a p + -type diffusion layer 15 are formed on the n-type semiconductor substrate 10 by thermal diffusion.
  • the heat treatment temperature for thermal diffusion is not particularly limited, but the heat treatment is preferably performed at a temperature of 750 ° C. to 1050 ° C. for 1 minute to 300 minutes.
  • a method of forming the n + -type diffusion layer 14 and the p + -type diffusion layer 15 at the same time is illustrated, but they may be diffused individually. That is, first, the coating diffusion material 13 for forming the p + -type diffusion layer 15 is applied and thermally diffused to remove the fired product 13 ′ of the coating diffusion material, and then the n + -type diffusion layer 14 is formed. The coating diffusion material 12 may be applied and thermally diffused to remove the fired product 12 'of the coating diffusion material.
  • the present invention can be similarly applied to a method using POCl 3 gas or BBr 3 gas.
  • a region where the p + -type diffusion layer 15 is to be formed is used as an opening, and a barrier layer is formed using the barrier layer forming composition other than the region used as the opening.
  • the barrier layer is removed.
  • a region where the n + -type diffusion layer 14 is to be formed is used as an opening, and a barrier layer is formed using the barrier layer forming composition other than the region used as the opening.
  • an n + type diffusion layer 14 is formed in the n type semiconductor substrate 10 corresponding to the opening.
  • the barrier layer forming composition 11 and the fired products 12 ′ and 13 ′ of the diffusion material for coating are removed to obtain a solar cell substrate.
  • the removal method include a method of immersing in an aqueous solution containing an acid, and a diffusion for coating for forming the barrier layer forming composition 11, and the n + type diffusion layer 14 and the p + type diffusion layer 15. It is preferably determined by the composition of the fired product 12 ', 13' of the material. Specifically, it is preferable to include a step of etching a glass layer formed on the semiconductor substrate by a thermal diffusion treatment with an aqueous solution containing hydrofluoric acid.
  • an alkaline earth metal or a metal compound containing an alkali metal is removed with hydrochloric acid (for example, 10% by mass HCl aqueous solution), washed with water, and further hydrofluoric acid aqueous solution (for example 2.5% by mass HF).
  • hydrochloric acid for example, 10% by mass HCl aqueous solution
  • hydrofluoric acid aqueous solution for example 2.5% by mass HF.
  • an antireflection film 16 is provided on the front surface which is a light receiving surface, and a passivation film 17 is provided on the back surface.
  • the antireflection film 16 and the passivation film 17 may have the same composition or different compositions.
  • Examples of the antireflection film 16 include a silicon nitride film, and examples of the passivation film 17 include a silicon oxide film.
  • the thickness of the antireflection film and the passivation film is not particularly limited, and is preferably 10 nm to 300 nm, and more preferably 30 nm to 150 nm.
  • a portion for forming an electrode is opened in the passivation film 17.
  • the opening can be formed by applying an etching solution (for example, a solution containing hydrofluoric acid, ammonium fluoride, or phosphoric acid) to a portion where the opening is desired by an inkjet method or the like, and performing heat treatment.
  • an etching solution for example, a solution containing hydrofluoric acid, ammonium fluoride, or phosphoric acid
  • an n electrode 18 and a p electrode 19 are formed on the n + type diffusion layer 14 and the p + type diffusion layer 15, respectively.
  • the material and forming method of the n electrode 18 and the p electrode 19 are not particularly limited.
  • the n-electrode 18 and the p-electrode 19 may be formed by applying an electrode forming paste containing aluminum, silver, or copper metal and drying the paste.
  • the n electrode 18 and the p electrode 19 are fired to complete the solar cell element.
  • the step of opening shown in FIG. 1 (7) can be omitted.
  • the glass frit melts the passivation film 17 on the back side, and the metal particles in the paste (For example, silver particles) form a contact portion with the silicon substrate 10 and solidify. Thereby, the formed surface electrodes 18 and 19 and the silicon substrate 10 are electrically connected. This is called fire-through.
  • the solar cell includes one or more of the solar cell elements, and is configured by arranging a wiring material on the electrode of the solar cell element.
  • a plurality of solar cell elements may be connected via a wiring material as necessary, and may be further sealed with a sealing material.
  • the wiring material and the sealing material are not particularly limited, and can be appropriately selected from those usually used in the industry.
  • % Means “% by mass” unless otherwise specified.
  • the volume average particle size of the alkaline earth metal or the metal compound containing the alkali metal in the examples is measured using a laser diffraction scattering method particle size distribution analyzer (LS 13 320 manufactured by Beckman Coulter), and the particle size in a dispersed state. Was measured.
  • composition 1 for forming a barrier layer 10 g (18% by mass) of calcium oxide (“CSQ” manufactured by Ube Materials, volume average particle diameter of 15.0 ⁇ m, amorphous particles), 10 g of tetraethoxysilane (“Taka Kagaku Kogyo”, “normal ethyl silicate”), pure water 25 g and 8.75 g of butyl carbitol (manufactured by Wako Pure Chemical Industries, Ltd.) were placed in a zirconia pot. Further, 50 g of a 3 mm bead mill was put in a zirconia pot, and a dispersion was obtained using a planetary ball mill (“pulverisete” manufactured by Fritsch) for 30 minutes at 600 rpm.
  • CSQ calcium oxide
  • Fritsch planetary ball mill
  • terpineol-LW manufactured by Terpene Chemical
  • ethylcellulose manufactured by Dow Chemical Co., Ltd., STD200
  • the viscosity of this composition 1 for forming a barrier layer 1 at 25 ° C. and 5 rpm was 45 Pa ⁇ s.
  • the viscosity was measured using an E-type viscometer (manufactured by Tokyo Keiki Co., Ltd.) with the sampling amount of the barrier layer forming composition being 0.5 ml.
  • the barrier layer-forming composition 1 was applied by screen printing (MT-320T, manufactured by Microtech) and heated at 150 ° C. After drying on the plate for 5 minutes, it was dried on a hot plate at 500 ° C. for 1 minute. This is a substrate with a barrier layer.
  • a phosphorus diffusion solution was spin-coated at 500 rpm (MS-A100, manufactured by Mikasa) and dried at 200 ° C. This is a counter diffusion substrate.
  • the substrate with the barrier layer and the counter diffusion substrate were opposed to each other at a distance of 1 mm, and heated at 950 ° C. for 10 minutes to diffuse phosphorus into the substrate with the barrier layer. Thereafter, the substrate with the barrier layer was immersed in a 10% by mass HCl aqueous solution for 5 minutes, washed with water, and further immersed in a 2.5% by mass HF aqueous solution for 5 minutes. This was washed with water and dried, and then evaluated as follows.
  • the sheet resistance of the substrate to which the barrier layer forming composition 1 was applied was measured by a four-probe method using a Loresta-EP MCP-T360 type low resistivity meter manufactured by Mitsubishi Chemical Corporation.
  • the sheet resistance of the portion to which the barrier layer forming composition 1 was applied was 240 ⁇ / ⁇ .
  • the sheet resistance of the uncoated part was 40 ⁇ / ⁇ .
  • the n-type silicon substrate after slicing was immersed in a 2.5% by mass HF aqueous solution for 5 minutes, washed with water, and measured for sheet resistance after drying, which was 240 ⁇ / ⁇ . .
  • the surface roughness of the portion where the barrier layer was applied was measured using a surface roughness measuring device (manufactured by Mitutoyo Corporation, Surf Test “SJ-2100”.
  • the average surface roughness Ra was 0.01 ⁇ m or less.
  • the surface roughness was measured on one side of the pyramid shape of the texture structure.
  • the barrier layer forming composition contains an alkaline earth metal or a metal compound containing an alkali metal, a dispersion medium, and one or more specific compounds selected from the group consisting of metal alkoxides, silicon alkoxides, silicate oligomers, and silicone oils. It has been found that by using the barrier layer forming composition, it is possible to sufficiently prevent the dopant from diffusing into the semiconductor substrate and to suppress the occurrence of roughness on the surface of the semiconductor substrate where the barrier layer is formed.

Abstract

La présente invention a trait à une composition de formation de couche d'arrêt, qui contient : un composé métallique qui contient un métal alcalino-terreux ou un métal alcalin ; un milieu de dispersion ; et au moins un type de composé spécifique choisi dans le groupe constitué par un alcoxyde métallique, un alcoxyde de silicium, un oligomère de silicate et une huile de silicone.
PCT/JP2013/050306 2012-01-10 2013-01-10 Composition de formation de couche d'arrêt, couche d'arrêt, procédé de production destiné à un substrat de cellule solaire, et procédé de production destiné à un élément de cellule solaire WO2013105603A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013518614A JP5339011B1 (ja) 2012-01-10 2013-01-10 太陽電池用基板の製造方法及び太陽電池素子の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-002633 2012-01-10
JP2012002633 2012-01-10

Publications (1)

Publication Number Publication Date
WO2013105603A1 true WO2013105603A1 (fr) 2013-07-18

Family

ID=48781545

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2013/050306 WO2013105603A1 (fr) 2012-01-10 2013-01-10 Composition de formation de couche d'arrêt, couche d'arrêt, procédé de production destiné à un substrat de cellule solaire, et procédé de production destiné à un élément de cellule solaire
PCT/JP2013/050302 WO2013105601A1 (fr) 2012-01-10 2013-01-10 Composition de formation de masque, procédé de production destiné à un substrat de cellule solaire, et procédé de production destiné à un élément de cellule solaire

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/050302 WO2013105601A1 (fr) 2012-01-10 2013-01-10 Composition de formation de masque, procédé de production destiné à un substrat de cellule solaire, et procédé de production destiné à un élément de cellule solaire

Country Status (4)

Country Link
JP (4) JP5339012B1 (fr)
CN (2) CN104319296A (fr)
TW (2) TW201335070A (fr)
WO (2) WO2013105603A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014175490A (ja) * 2013-03-08 2014-09-22 Nissan Chem Ind Ltd 半導体ウェハの不純物熱拡散処理プロセス

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5339012B1 (ja) * 2012-01-10 2013-11-13 日立化成株式会社 太陽電池用基板の製造方法および太陽電池素子の製造方法
WO2013111840A1 (fr) * 2012-01-26 2013-08-01 日本合成化学工業株式会社 Liquide d'application pour formation de couche anti-diffusion, procédé de fabrication de substrat semi-conducteur avec couche de diffusion de dopant mettant en œuvre ce liquide d'application, et procédé de fabrication de batterie solaire
KR102124920B1 (ko) * 2013-08-02 2020-06-19 도레이 카부시키가이샤 마스크 페이스트 조성물, 이것을 사용해서 얻어지는 반도체 소자 및 반도체 소자의 제조 방법
CN103646992A (zh) * 2013-11-28 2014-03-19 奥特斯维能源（太仓）有限公司 一种p型晶体硅双面电池的制备方法
CN103646991A (zh) * 2013-11-28 2014-03-19 奥特斯维能源（太仓）有限公司 P型晶体硅双面电池的制备方法
KR20180118609A (ko) * 2016-02-25 2018-10-31 데이진 가부시키가이샤 이온 주입 마스크 형성용 분산체, 이온 주입 마스크의 형성 방법 및 반도체 디바이스 제조 방법
JP6842841B2 (ja) * 2016-04-28 2021-03-17 帝人株式会社 イオン注入用マスクの形成方法及び半導体デバイス製造方法
WO2018003141A1 (fr) * 2016-06-28 2018-01-04 日立化成株式会社 Composition de formation de couche de passivation, substrat semi-conducteur à couche de passivation, procédé de fabrication de substrat semi-conducteur à couche de passivation, élément de cellule solaire, procédé de fabrication d'élément de cellule solaire, et cellule solaire
CN111403537B (zh) * 2018-12-27 2021-05-25 江苏日托光伏科技股份有限公司 一种基于碱抛的选择性发射极电池正面保护方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007020833A1 (fr) * 2005-08-12 2007-02-22 Sharp Kabushiki Kaisha Pâte de masquage, son procédé de production, et procédé de fabrication d’une cellule solaire utilisant cette pâte de masquage
JP2009091548A (ja) * 2007-09-21 2009-04-30 Ricoh Co Ltd ペースト組成物、絶縁膜、多層配線構造、プリント基板、画像表示装置、及びペースト組成物の製造方法
WO2010016186A1 (fr) * 2008-08-07 2010-02-11 京都エレックス株式会社 Pâte conductrice pour la formation d'une électrode d'élément de cellule solaire, élément de cellule solaire, et procédé de fabrication dudit élément de cellule solaire
WO2011090216A1 (fr) * 2010-01-25 2011-07-28 日立化成工業株式会社 COMPOSITION DE FORMATION DE COUCHE DE DIFFUSION DE TYPE n, PROCÉDÉ DE FABRICATION D'UNE COUCHE DE DIFFUSION DE TYPE n ET PROCÉDÉ DE FABRICATION D'UNE CELLULE SOLAIRE
WO2011132777A1 (fr) * 2010-04-23 2011-10-27 日立化成工業株式会社 COMPOSITION FORMANT UNE COUCHE DE DIFFUSION DE TYPE n, PROCÉDÉ DE PRODUCTION D'UNE COUCHE DE DIFFUSION DE TYPE n ET PROCÉDÉ DE PRODUCTION D'UN ÉLÉMENT DE CELLULE SOLAIRE

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182577A (ja) * 1983-03-31 1984-10-17 Hoxan Corp 太陽電池用シリコンウエハの製造方法
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
JP5283824B2 (ja) * 2006-01-18 2013-09-04 東京応化工業株式会社 膜形成組成物
US20090078458A1 (en) * 2007-09-21 2009-03-26 Ricoh Company, Ltd. Paste composition, insulating film, multilayer interconnection structure, printed-circuit board, image display device, and manufacturing method of paste composition
KR101631711B1 (ko) * 2008-03-21 2016-06-17 신에쓰 가가꾸 고교 가부시끼가이샤 확산용 인 페이스트 및 그것을 이용한 태양 전지의 제조 방법
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
JP5271189B2 (ja) * 2009-08-04 2013-08-21 シャープ株式会社 裏面電極型太陽電池セルの製造方法
JP5646950B2 (ja) * 2009-11-06 2014-12-24 東京応化工業株式会社 マスク材組成物、および不純物拡散層の形成方法
JP2011119341A (ja) * 2009-12-01 2011-06-16 Sharp Corp 拡散防止マスクの形成方法およびそれを用いた太陽電池の製造方法
JP5339012B1 (ja) * 2012-01-10 2013-11-13 日立化成株式会社 太陽電池用基板の製造方法および太陽電池素子の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007020833A1 (fr) * 2005-08-12 2007-02-22 Sharp Kabushiki Kaisha Pâte de masquage, son procédé de production, et procédé de fabrication d’une cellule solaire utilisant cette pâte de masquage
JP2009091548A (ja) * 2007-09-21 2009-04-30 Ricoh Co Ltd ペースト組成物、絶縁膜、多層配線構造、プリント基板、画像表示装置、及びペースト組成物の製造方法
WO2010016186A1 (fr) * 2008-08-07 2010-02-11 京都エレックス株式会社 Pâte conductrice pour la formation d'une électrode d'élément de cellule solaire, élément de cellule solaire, et procédé de fabrication dudit élément de cellule solaire
WO2011090216A1 (fr) * 2010-01-25 2011-07-28 日立化成工業株式会社 COMPOSITION DE FORMATION DE COUCHE DE DIFFUSION DE TYPE n, PROCÉDÉ DE FABRICATION D'UNE COUCHE DE DIFFUSION DE TYPE n ET PROCÉDÉ DE FABRICATION D'UNE CELLULE SOLAIRE
WO2011132777A1 (fr) * 2010-04-23 2011-10-27 日立化成工業株式会社 COMPOSITION FORMANT UNE COUCHE DE DIFFUSION DE TYPE n, PROCÉDÉ DE PRODUCTION D'UNE COUCHE DE DIFFUSION DE TYPE n ET PROCÉDÉ DE PRODUCTION D'UN ÉLÉMENT DE CELLULE SOLAIRE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014175490A (ja) * 2013-03-08 2014-09-22 Nissan Chem Ind Ltd 半導体ウェハの不純物熱拡散処理プロセス

Also Published As

Publication number Publication date
TW201339248A (zh) 2013-10-01
JP2013219372A (ja) 2013-10-24
JPWO2013105601A1 (ja) 2015-05-11
JP5339011B1 (ja) 2013-11-13
TW201335070A (zh) 2013-09-01
JP2013168677A (ja) 2013-08-29
CN104067395A (zh) 2014-09-24
JP5339012B1 (ja) 2013-11-13
WO2013105601A1 (fr) 2013-07-18
CN104319296A (zh) 2015-01-28
JPWO2013105603A1 (ja) 2015-05-11

Similar Documents

Publication Publication Date Title
JP5339011B1 (ja) 太陽電池用基板の製造方法及び太陽電池素子の製造方法
JP5927793B2 (ja) ｐ型拡散層形成組成物、ｐ型拡散層の製造方法及び太陽電池素子の製造方法
JP6447493B2 (ja) バリア層形成用組成物、バリア層付き半導体基板、太陽電池用基板の製造方法及び太陽電池素子の製造方法
JP5339013B1 (ja) 太陽電池用基板の製造方法および太陽電池素子の製造方法
JP2013235942A (ja) 不純物拡散層形成組成物、不純物拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池
JP6008026B2 (ja) 太陽電池素子の製造方法
WO2013105604A1 (fr) Composition de formation de couche d'arrêt, procédé de production destiné à un substrat de cellule solaire, et procédé de production destiné à un élément de cellule solaire
JP5541138B2 (ja) ｐ型拡散層形成組成物、ｐ型拡散層の製造方法及び太陽電池セルの製造方法
JP2014072437A (ja) 半導体基板パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法
JP2014167961A (ja) パッシベーション膜用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法
WO2012096311A1 (fr) COMPOSITION DE FORMATION DE COUCHE DE DIFFUSION DE TYPE p, PROCÉDÉ DE PRODUCTION D'UN SUBSTRAT DE SILICIUM AYANT UNE COUCHE DE DIFFUSION DE TYPE p, PROCÉDÉ DE PRODUCTION D'UN ÉLÉMENT DE PILE PHOTOVOLTAÏQUE, ET PILE PHOTOVOLTAÏQUE
JP2013026525A (ja) ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池
JP2014090020A (ja) バリア層形成用組成物、バリア層付き半導体基板、太陽電池用基板の製造方法および太陽電池素子の製造方法
JP2016213230A (ja) ｐ型拡散層付き半導体基板の製造方法、ｐ型拡散層付き半導体基板、太陽電池素子の製造方法及び太陽電池素子
WO2018012547A1 (fr) Procédé de fabrication d'un substrat semi-conducteur avec une couche de diffusion de type p, substrat semi-conducteur avec couche de diffusion de type p, procédé de production d'un élément de cellule solaire et élément de cellule solaire
JP2017059835A (ja) 不純物拡散層形成組成物、不純物拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池
JP2016213231A (ja) ｐ型拡散層付き半導体基板の製造方法、ｐ型拡散層付き半導体基板、太陽電池素子の製造方法及び太陽電池素子

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2013518614

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13735712

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13735712

Country of ref document: EP

Kind code of ref document: A1