WO2013105346A1 - Corps fluorescent et dispositif électroluminescent - Google Patents

Corps fluorescent et dispositif électroluminescent Download PDF

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Publication number
WO2013105346A1
WO2013105346A1 PCT/JP2012/080544 JP2012080544W WO2013105346A1 WO 2013105346 A1 WO2013105346 A1 WO 2013105346A1 JP 2012080544 W JP2012080544 W JP 2012080544W WO 2013105346 A1 WO2013105346 A1 WO 2013105346A1
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phosphor
content
ppm
light
nitride
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PCT/JP2012/080544
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Japanese (ja)
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真太郎 渡邉
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電気化学工業株式会社
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

Definitions

  • the present invention relates to a phosphor that converts the wavelength of light of a light emitting element such as an LED, and a light emitting device using the phosphor. More specifically, the present invention relates to a nitride or oxynitride phosphor having a high emission peak intensity, and a light emitting device having superior luminance due to the use of the phosphor.
  • Light-emitting devices combining semiconductor light-emitting elements and phosphors are attracting attention as next-generation light-emitting devices that are expected to have low power consumption, small size, high brightness, and wide color reproducibility, and are actively researched and developed.
  • a white LED that combines white light emitting from a blue to violet short-wavelength visible light with a phosphor and obtains white light by mixing the light emitted from the semiconductor light emitting device and light converted in wavelength by the phosphor is currently available It is widely distributed.
  • demands for the heat resistance and durability of the phosphor are increasing, and there is a demand for a phosphor excellent in durability with a small decrease in light emission intensity due to a temperature rise.
  • the crystal structure is relatively stable, and the emission characteristics, thermal stability, and chemical stability are good, so that nitride or oxynitride is used as a base material, transition metal or Nitride or oxynitride phosphors activated by rare earth metals are widely used.
  • Typical nitride or oxynitride phosphors include ⁇ sialon, ⁇ sialon, CASN (ie, CaAlSiN 3 ) and the like.
  • a nitride or oxynitride having a ⁇ -type Si 3 N 4 crystal structure is used as a base crystal, and metal element M (where M is selected from Mn, Ce, Eu)
  • metal element M where M is selected from Mn, Ce, Eu
  • This phosphor has higher green luminance than a conventional rare earth activated sialon phosphor, and is more durable than a conventional oxide phosphor.
  • a lanthanide metal Re1 (Re1 is Ce, Pr, Eu, Tb) in which a part or all of a metal that is solid-solved in ⁇ sialon as a base material is a light emission center. , Yb, or Er) or two kinds of lanthanide metals Re1 and Re2 as a coactivator (Re2 is Dy), and a crystalline oxynitride phosphor has been proposed.
  • the phosphor has an excitation spectrum shifted to a longer wavelength side as compared with a conventional oxide phosphor, and is said to be excellent in thermal and mechanical properties and chemical stability (Patent Document 2).
  • CASN which uses an inorganic compound having the same crystal structure as that of the CaAlSiN 3 crystal as a base crystal, emits a longer wavelength orange or red light than conventional rare earth activated sialon phosphors, and conventionally reported nitrides and acids. It is said that the luminance is higher than that of a red phosphor having nitride as a base crystal (Patent Document 3).
  • Patent Document 4 a method in which the raw material mixture is sintered in a specific pressure range in a specific temperature range, and then the obtained sintered body is pulverized until the average particle size is in a specific range.
  • Patent Document 5 a method for obtaining coarse single crystal particles by liquid phase sintering
  • Patent Document 6 a method for controlling to a specific composition region range, etc.
  • Patent Document 7 limiting the content of metal elements such as Fe and Mn in the nitride or oxynitride phosphor
  • Patent Document 8 including halogen and limiting the oxygen content
  • the present invention has been made in view of the above-described problems, and an object of the present invention is to provide a phosphor having high emission intensity and to provide a high-luminance light-emitting device using such a phosphor.
  • nitride or oxynitride phosphors As a result of repeated studies, the present inventors have focused on the presence of non-metallic S (sulfur element) and P (phosphorus element), which have not been noticed so far, in nitride or oxynitride phosphors. It has been found that a phosphor having a high emission intensity can be obtained by controlling the content of the phosphor to a certain value or less, and the present invention has been completed. Thereby, when a semiconductor light emitting element, particularly, a blue LED or an ultraviolet LED is used as a light source, it is possible to provide a nitride or oxynitride phosphor having high emission intensity, and a highly efficient light emitting device using these.
  • a semiconductor light emitting element particularly, a blue LED or an ultraviolet LED
  • MI Li, Mg, Ca, Sr, Ba, Y and lanthanide elements (La and Ce) 1 at least one element containing at least Ca selected from the group consisting of: (1) the fluorescence of (1) which is ⁇ sialon represented by 0 ⁇ x ⁇ 3.0, 0.005 ⁇ y ⁇ 0.4) body.
  • MI is Ca.
  • a light emitting device including a light emitting element that emits primary light, and a wavelength conversion unit that absorbs part of the primary light and emits secondary light having a wavelength longer than the wavelength of the primary light,
  • a nitride or oxynitride phosphor having high emission intensity can be provided, and further, a light-emitting device capable of realizing high luminance by using the phosphor can be provided.
  • the phosphor of the present invention can include an activating element M 1 , a divalent metal element M 2 , a trivalent metal element M 3 , and a tetravalent metal element M 4, and is represented by the following general formula [1]. It must be the nitride or oxynitride phosphor represented. M 1 a M 2 b M 3 c M 4 d N e O f [1]
  • the activator element M 1 various light-emitting ions that can be contained in the crystal matrix constituting the nitride or oxynitride phosphor can be used, but Cr, Mn, Fe, Ce, Pr, Nd, Sm can be used. , Eu, Tb, Dy, Ho, Er, Tm, and Yb are preferably used because one or more elements selected from the group consisting of Yb can be used because a phosphor with high emission characteristics can be produced. Among the elements M 1 as an emission center also, Eu or Ce is particularly preferred because the resulting high brightness.
  • the divalent metal element M 2 is one or more elements selected from the group consisting of Mg, Ca, Sr, Ba, and Zn
  • the trivalent metal element M 3 is Al.
  • ⁇ sialon phosphors activated with divalent Eu in particular, ⁇ sialon phosphors activated with divalent Eu, and the main crystal phase is CaAlSiN 3
  • a CASN phosphor activated with divalent Eu having the same crystal structure as is particularly preferred.
  • the Eu-activated ⁇ sialon phosphor has a ⁇ sialon represented by the general formula: Si 6-Z Al Z O Z N 8-Z as a host crystal, and Eu 2+ is dissolved as a luminescent center. is there.
  • This ⁇ -sialon phosphor is represented by the general formula: Si 6-z Al z O z N 8-z : Eu (0 ⁇ z ⁇ 4.2).
  • the Eu-activated ⁇ sialon phosphor has a general formula: (MI) x (Eu) y (Si, Al) 12 (O, N) 16 (where the MI element is Li, Mg, Ca, Sr, Ba, Y and One or more elements including at least Ca selected from the group consisting of lanthanide elements (excluding La and Ce) are represented by 0 ⁇ x ⁇ 3.0 and 0.005 ⁇ y ⁇ 0.4.
  • the MI element Ca which is advantageous in terms of chromaticity adjustment is preferable.
  • the Eu-activated phosphor whose main crystal phase has the same crystal structure as CaAlSiN 3 has the general formula: (MII) x (Si, Al) 2 (N, O) 3 ⁇ y (where the MII element is Li, Mg) One or more alkali metal elements or alkaline earth metal elements selected from Ca, Sr and Ba, 0.8 ⁇ x ⁇ 1.2, 0 ⁇ y ⁇ 0.2), and one of the MII elements It is a phosphor whose part is substituted with Eu element.
  • the MII element is preferably at least one or both of Ca and Sr, which are advantageous in terms of chromaticity adjustment.
  • Examples of other nitride or oxynitride phosphors represented by the general formula [1] include the following. Ca 2 Si 5 N 8 : Eu, Sr 2 Si 5 N 8 : Eu, (Sr 0.5 Ca 0.5 ) 2 Sr 5 N 8 : Eu, Ca 2 Si 5 O 0.1 N 7.9 : Eu , Sr 2 Si 5 O 0.1 N 7.9: Eu, (Sr 0.5 Ca 0.5) 2 Sr 5 O 0.1 N 7.9: Eu, BaSi 2 O 2 N 2: Eu, SrSi 2 O 2 N 2 : Eu, CaSi 2 O 2 N 2 : Eu, Sr 2 Al 3 Si 7 ON 13 : Eu, Sr 3 Al 3 Si 13 O 2 N 21 : Eu, Ca 3 Si 2 N 2 O 4 : Eu, Sr 3 Si 2 N 2 O 4 : Eu, CaAlSi 4 N 7 : Eu, CaAlSi 4 N 7 : Ce, SrAlSi 4 N 7 : Eu, SrAlS
  • the main feature of the present invention is that the allowable amount of S and P in the nitride or oxynitride phosphor represented by the general formula [1] is defined.
  • various studies have been made to achieve high emission intensity of nitride and oxynitride phosphors.
  • metals and oxygen give emission characteristics.
  • the influence has been studied, the influence of nonmetallic elements on the light emission characteristics has hardly been studied.
  • the present inventor has discovered for the first time that S and P will decrease the emission intensity in a nitride or oxynitride phosphor from among a myriad of non-metallic elements that can be present, and the emission intensity will be reduced.
  • the present invention has been completed which provides new conditions for producing excellent phosphors.
  • the S content in the nitride or oxynitride phosphor of the present invention is 5 ppm or less, preferably 3 ppm or less. If the S content in the phosphor exceeds 5 ppm, the emission intensity tends to decrease significantly.
  • the content of S in each phosphor can be calculated by performing analysis using, for example, combustion ion chromatography. Since the S content of the phosphor reflects the S content contained in the raw material powder, it can be controlled by using a raw material with a low S content. Further, the P content in the nitride or oxynitride phosphor of the present invention is 30 ppm or less, preferably 20 ppm or less.
  • the P content in each phosphor can be calculated, for example, by performing a microanalysis using an ICP emission analyzer equipped with a mass spectrometer. Since the P content of the phosphor reflects the P content contained in the raw material powder, it can be controlled by using a raw material with a low P content.
  • the present invention also relates to a light-emitting device using each of the phosphors. That is, a light-emitting device according to the present invention includes a light-emitting element that emits primary light, and a wavelength conversion unit that absorbs part of the primary light and emits secondary light having a wavelength longer than the wavelength of the primary light. And the wavelength converter includes at least one of the above-described nitride or oxynitride phosphor. Since the nitride or oxynitride phosphor used in the light-emitting device has a Cu content of a certain value or less and high light emission intensity, the luminance of the light-emitting device can be improved.
  • Example 1 The phosphor of Example 1 will be described using ⁇ sialon. Silicon nitride powder, aluminum nitride powder, and aluminum oxide powder are blended so that the z value of ⁇ sialon (Si 6-z Al z O z N 8-z ) after synthesis is 0.2, Then, 0.8% by mass of europium oxide powder was blended as an outer portion to obtain a raw material mixture. This raw material mixture was mixed by a dry ball mill using a nylon pot and silicon nitride balls. After mixing with the ball mill, a sieve having an opening of 150 ⁇ m was passed through to remove aggregates to obtain a raw material mixed powder.
  • the raw material mixed powder was filled in a cylindrical boron nitride container with a lid, and was subjected to a heat treatment at 2000 ° C. for 10 hours in a pressurized nitrogen atmosphere of 0.8 MPa in an electric furnace of a carbon heater.
  • the obtained composite was lightly crushed in a mortar and passed through a sieve having an opening of 150 ⁇ m to obtain a phosphor powder.
  • the crystal phase was examined by powder X-ray diffraction measurement using CuK ⁇ rays, the crystal phase was a ⁇ sialon single phase.
  • This phosphor powder was subjected to combustion-ion chromatography analysis and ICP emission analysis. As a result, the S content was 1 ppm, the P content was 12 ppm, and Eu 0.15 Si 5.8 Al 0.2 O 0.2 N. It was ⁇ sialon represented by 7.8 .
  • Example 2 Production was carried out in the same manner as in Example 1 except that a raw material mixed powder having an S content of 9 ppm and a P content of 35 ppm was used as a raw material.
  • the S content was 3 ppm
  • the P content was 25 ppm
  • Eu 0.15 ⁇ sialon represented by Si 5.8 Al 0.2 O 0.2 N 7.8 was obtained.
  • Example 1 Production was carried out in the same manner as in Example 1 except that a raw material mixed powder having an S content of 22 ppm and a P content of 50 ppm was used as a raw material.
  • the S content was 10 ppm
  • the P content was 35 ppm
  • Eu 0.15 ⁇ sialon represented by Si 5.8 Al 0.2 O 0.2 N 7.8 was obtained.
  • Example 3 Description will be made using ⁇ sialon as the phosphor of Example 3.
  • the silicon nitride powder was 71.6% by mass
  • the aluminum nitride powder was 25.8% by mass
  • the europium oxide powder was 2.6% by mass
  • these were wet mixed in an ethanol solvent with a silicon nitride pot and balls for 1 hour.
  • the resulting slurry was suction filtered to remove the solvent and dried to obtain a premixed powder.
  • this premixed powder was put in a glove box under a nitrogen atmosphere, mixed with calcium nitride powder and a mortar, and passed through a sieve having an opening of 250 ⁇ m to obtain a raw material mixed powder.
  • the S content was 4 ppm and the P content was 18 ppm.
  • the raw material mixed powder was filled in a boron nitride crucible and subjected to heat treatment at 1750 ° C. for 16 hours in an atmospheric pressure nitrogen atmosphere in an electric furnace of a carbon heater. Since calcium nitride contained in the raw material mixed powder is easily hydrolyzed in the air, the crucible filled with the raw material mixed powder is taken out of the glove box and immediately set in an electric furnace and immediately evacuated. Prevented the reaction of calcium nitride.
  • the obtained composite was lightly crushed in a mortar and passed through a sieve having an opening of 150 ⁇ m to obtain a phosphor powder.
  • the crystal phase was examined by powder X-ray diffraction measurement using CuK ⁇ ray, the existing crystal phase was ⁇ sialon single phase.
  • Example 4 Production was carried out in the same manner as in Example 3 except that a raw material mixed powder having an S content of 11 ppm and a P content of 38 ppm was used as a raw material.
  • the S content was 4 ppm
  • the P content was 27 ppm
  • Ca 1.7 ⁇ sialon represented by Eu 0.1 Si 8.5 Al 3.5 O 0.1 N 15.9 was obtained.
  • Example 2 When manufactured in the same manner as in Example 3 except that the raw material mixed powder having an S content of 19 ppm and a P content of 50 ppm was used, the S content was 8 ppm, the P content was 37 ppm, and Ca 1.7 Eu 0 .Alpha . Sialon represented by .1 Si 8.5 Al 3.5 O 0.1 N 15.9 was obtained.
  • Example 5 The phosphor of Example 5 is represented by the general formula: (MII) x (Si, Al) 2 (N, O) 3 ⁇ y , and a part of the MII element is substituted with Eu element, and the main crystal phase is CaAlSiN 3 Description will be made using phosphors having the same crystal structure.
  • the raw material mixed powder was filled in a boron nitride crucible and subjected to a heat treatment at 1800 ° C. for 2 hours in a nitrogen atmosphere in a carbon heater electric furnace.
  • the obtained composite was lightly crushed with a mortar, and passed through a sieve having an opening of 100 ⁇ m to obtain a phosphor powder.
  • the main crystal phase had the same crystal structure as CaAlSiN 3 .
  • Example 6 Production was carried out in the same manner as in Example 5 except that a raw material mixed powder having an S content of 8 ppm and a P content of 40 ppm was used as a raw material.
  • the S content was 4 ppm
  • the P content was 26 ppm
  • Ca 1.0 A phosphor represented by Eu 0.01 Si 1.0 Al 1.0 N 2.8 O 0.2 was obtained.
  • Example 3 Production was carried out in the same manner as in Example 5 except that a raw material mixed powder having an S content of 18 ppm and a P content of 52 ppm was used as a raw material.
  • the S content was 8 ppm
  • the P content was 38 ppm
  • Ca 1.0 A phosphor represented by Eu 0.01 Si 1.0 Al 1.0 N 2.8 O 0.2 was obtained.
  • Example 7 26.6% by mass of silicon nitride powder, 23.3% by mass of aluminum nitride powder, 5.6% by mass of calcium nitride powder, 43.7% by mass of strontium nitride powder, and 0.8% by mass of europium nitride powder
  • the obtained mixture was passed through a sieve having an opening of 500 ⁇ m to remove aggregates to obtain a raw material mixed powder.
  • the powder weighing, mixing and molding steps were all performed in a glove box capable of maintaining a nitrogen atmosphere with a moisture content of 1 ppm or less and oxygen of 1 ppm or less.
  • the S content was 4 ppm and the P content was 25 ppm.
  • This raw material mixed powder was filled into a crucible made of boron nitride, and was heat-treated at 1800 ° C. for 2 hours in an atmospheric atmosphere of nitrogen with an electric furnace of a carbon heater. The obtained composite was lightly crushed with a mortar, and passed through a sieve having an opening of 100 ⁇ m to obtain a phosphor powder.
  • the crystal phase was examined by powder X-ray diffraction measurement using CuK ⁇ rays, the main crystal phase had the same crystal structure as CaAlSiN 3 .
  • this phosphor powder was analyzed, this powder had an S content of 1 ppm and a P content of 16 ppm, and Sr 0.8 Ca 0.2 Eu 0.01 Si 1.0 Al 1.0 N 2.8. was phosphor represented by O 0.2.
  • Example 8 Production was performed in the same manner as in Example 7 except that a raw material mixed powder having an S content of 10 ppm and a P content of 39 ppm was used as a raw material.
  • the S content was 4 ppm
  • the P content was 26 ppm
  • Sr 0.8 A phosphor represented by Ca 0.2 Eu 0.01 Si 1.0 Al 1.0 N 2.8 O 0.2 was obtained.
  • Example 4 Production was carried out in the same manner as in Example 7 except that a raw material mixed powder having an S content of 19 ppm and a P content of 50 ppm was used as a raw material.
  • the S content was 7 ppm
  • the P content was 35 ppm
  • Sr 0.8 A phosphor represented by Ca 0.2 Eu 0.01 Si 1.0 Al 1.0 N 2.8 O 0.2 was obtained.
  • Table 1 shows the results of measuring the emission peak intensity of the phosphors obtained in Examples 1 to 8 and Comparative Examples 1 to 4 using a spectrofluorometer (manufactured by Hitachi High-Technologies Corporation, “F4500”). In the measurement, blue light having a wavelength of 455 nm was used as excitation light. The emission intensity was expressed as a relative intensity (%) for each corresponding phosphor type. That is, the values of Example 1 and Comparative Example 1 are the relative intensity when the emission peak intensity of Example 2 is 100%, and the values of Example 3 and Comparative Example 2 are the emission peak intensity of Example 4 being 100%. Relative intensities, values in Example 5 and Comparative Example 3 are relative intensities when the emission peak intensity of Example 6 is 100%, and values in Example 7 and Comparative Example 4 are emission peak intensities in Example 8. Is the relative strength when 100 is 100%.
  • the S content is controlled to 5 ppm or less, particularly 3 ppm or less, and the P content is controlled to 30 ppm or less, particularly 20 ppm or less.
  • the S content is controlled to 5 ppm or less, particularly 3 ppm or less
  • the P content is controlled to 30 ppm or less, particularly 20 ppm or less.
  • Example Light-emitting device using the phosphors of Examples 1 to 8)
  • a gallium nitride (GaN) -based semiconductor having a peak wavelength at 440 nm was used as the light-emitting element.
  • a single substance or a composite of the phosphors of Examples 1 to 8 was used for the wavelength converter.
  • These phosphors were dispersed in a predetermined silicone resin to form a wavelength conversion part, and a light emitting device was manufactured. All of the obtained light emitting devices had high luminance.
  • the phosphor according to the present invention can be applied as an LED phosphor.
  • the light emitting device using the phosphor according to the present invention can be applied to an illumination device, a backlight of a liquid crystal panel, a projector for image display, and a light source of a signal display device.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne : un corps fluorescent présentant une puissance d'émission lumineuse plus élevée que celle de corps fluorescents classiques ; et un dispositif électroluminescent d'intensité élevée qui utilise le corps fluorescent. Le corps fluorescent de nitrure ou d'oxynitrure présente une teneur en S non supérieure 5 ppm et une teneur en P non supérieure à 30 ppm. Le corps fluorescent de nitrure ou d'oxynitrure contient : un β-SiAlON représenté par la formule générale Si6-zAlzOzN8-z (0 < z ≤ 4,2) et contenant Eu comme centre électroluminescent ; un β-SiAlON représenté par la formule générale (MI)x(Eu)y(Si, Al)12(O, N)16 ; et un corps fluorescent représenté par la formule générale (MII)x(Si, Al)2(N,O)3±y, une partie de l'élément MII étant remplacée par l'élément Eu, et la phase cristalline primaire ayant la même structure cristalline que CaAlSiN3.
PCT/JP2012/080544 2012-01-12 2012-11-27 Corps fluorescent et dispositif électroluminescent WO2013105346A1 (fr)

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Cited By (5)

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CN105899641A (zh) * 2013-12-26 2016-08-24 电化株式会社 荧光体和发光装置
US9680066B2 (en) 2014-02-26 2017-06-13 Denka Company Limited Phosphor, light emitting element, and light emitting device
US9676999B2 (en) 2014-02-26 2017-06-13 Denka Company Limited Phosphor, light emitting element, and light emitting device
CN113388400A (zh) * 2021-06-03 2021-09-14 西安鸿宇光电技术有限公司 一种黄绿色力致发光材料及其制备方法和应用
WO2022054764A1 (fr) * 2020-09-10 2022-03-17 デンカ株式会社 LUMINOPHORE À BASE DE SIALON DE TYPE β ACTIVATEUR D'EUROPIUM ET DISPOSITIF ÉLECTROLUMINESCENT

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CN106574181B (zh) 2014-08-07 2020-10-16 三菱化学株式会社 荧光体、发光装置、图像显示装置及照明装置
WO2018056447A1 (fr) * 2016-09-26 2018-03-29 三菱ケミカル株式会社 Phosphore, dispositif électroluminescent, dispositif d'éclairage, et dispositif d'affichage d'images

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CN105899641A (zh) * 2013-12-26 2016-08-24 电化株式会社 荧光体和发光装置
US10093854B2 (en) 2013-12-26 2018-10-09 Denka Company Limited Phosphor and light emitting device
US9680066B2 (en) 2014-02-26 2017-06-13 Denka Company Limited Phosphor, light emitting element, and light emitting device
US9676999B2 (en) 2014-02-26 2017-06-13 Denka Company Limited Phosphor, light emitting element, and light emitting device
WO2022054764A1 (fr) * 2020-09-10 2022-03-17 デンカ株式会社 LUMINOPHORE À BASE DE SIALON DE TYPE β ACTIVATEUR D'EUROPIUM ET DISPOSITIF ÉLECTROLUMINESCENT
CN116018388A (zh) * 2020-09-10 2023-04-25 电化株式会社 铕活化β型塞隆荧光体和发光装置
CN113388400A (zh) * 2021-06-03 2021-09-14 西安鸿宇光电技术有限公司 一种黄绿色力致发光材料及其制备方法和应用

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