WO2013103152A1 - Dispositif d'exposition à la lumière et procédé de fabrication du matériau exposé - Google Patents

Dispositif d'exposition à la lumière et procédé de fabrication du matériau exposé Download PDF

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Publication number
WO2013103152A1
WO2013103152A1 PCT/JP2013/050011 JP2013050011W WO2013103152A1 WO 2013103152 A1 WO2013103152 A1 WO 2013103152A1 JP 2013050011 W JP2013050011 W JP 2013050011W WO 2013103152 A1 WO2013103152 A1 WO 2013103152A1
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WIPO (PCT)
Prior art keywords
exposure
alignment mark
exposed
mask
imaging
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PCT/JP2013/050011
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English (en)
Japanese (ja)
Inventor
和重 橋本
Original Assignee
株式会社ブイ・テクノロジー
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Application filed by 株式会社ブイ・テクノロジー filed Critical 株式会社ブイ・テクノロジー
Priority to KR1020147018966A priority Critical patent/KR102026107B1/ko
Priority to CN201380004517.1A priority patent/CN104024943B/zh
Publication of WO2013103152A1 publication Critical patent/WO2013103152A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7038—Alignment for proximity or contact printer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Definitions

  • the present invention relates to an exposure apparatus and an exposed material manufacturing method, and more particularly to an exposure apparatus and an exposed material manufacturing method for aligning an exposed material and an exposure mask to expose the exposed material.
  • an exposure apparatus that uses an exposure mask to expose a material to be exposed in a predetermined pattern.
  • Such an exposure apparatus is used, for example, for the manufacture of a color filter for a liquid crystal display device, the alignment treatment of a photoalignment film, and the like.
  • an exposure mask it is necessary to align the exposure mask and the material to be exposed.
  • alignment marks are used as an example (for example, Patent Document 1).
  • Patent Document 1 describes a mask having a mask mark and a position detection method for detecting the position of a wafer having a wafer mark.
  • a mask having a mask mark and a wafer having a wafer mark are arranged close to each other.
  • the mask mark and the wafer mark are imaged. Since there is a distance between the mask and the wafer at the time of imaging, the imaging positions of the mask mark and the wafer mark differ depending on this distance. Therefore, in the position detection method described in Patent Document 1, a mask mark and a wafer mark are imaged using two optical paths having different optical path lengths, and the optical path lengths of the two optical paths are adjusted, whereby the mask mark and the wafer are detected.
  • the mark is imaged on the same plane.
  • An alignment reticle having a mask alignment mark and a wafer alignment mark is arranged on the same plane.
  • the relative position between the mask alignment mark on the alignment reticle and the mask mark image on the mask is detected, and the relative position between the alignment mark on the alignment reticle and the wafer mark image on the wafer is detected. To detect. Thereby, the relative position of the mask and the wafer is detected.
  • the mask mark and the wafer mark are imaged using two optical paths having different optical path lengths, and the optical path length of the two optical paths is adjusted, whereby the mask mark and the wafer are detected.
  • the mark is imaged on the same plane.
  • the angle of the optical axis with respect to the imaging target is shifted from a predetermined angle in each optical path.
  • the optical path length also changes, and accordingly, the relative positions of the mask mark and the wafer mark also change.
  • an alignment reticle is disposed on the optical axis of each optical path, and an optical path length adjusting means for each optical path is provided. Therefore, a complicated mechanism requiring cost is required for aligning the exposure mask and the wafer that is the material to be exposed.
  • the alignment optical system is moved, or at a position where the alignment optical system does not interfere from the mask side. Exposure energy is irradiated to expose the resist layer on the wafer. Rather than performing exposure at a position where the alignment optical system does not interfere, moving the alignment optical system has less influence on the arrangement position of the light source and the exposure area on the exposed material.
  • the exposure to the wafer is started after the alignment optical system is moved, there is a problem that the operation time using the exposure apparatus is delayed by the movement time of the alignment optical system.
  • an object of the present invention is to more accurately identify the relative position of the exposure mask and the material to be exposed without using a complicated and expensive mechanism in the exposure of the material to be exposed. It is to eliminate the delay of working time used.
  • an exposure apparatus includes a light source that irradiates exposure material with exposure light, an exposure mask that is held between the light source and the exposure material, the exposure material, and exposure.
  • a material to be exposed using a microlens array disposed between the mask and a first alignment mark provided on the exposure material and a second alignment mark provided on the exposure mask And aligning the exposure mask with each other, image at least a part of the first alignment mark imaged on the exposure mask via the microlens array and the second alignment mark.
  • the imaging unit that moves in a predetermined direction so as not to prevent exposure to the exposed material, and the second alignment with at least a part of the first alignment mark imaged by the imaging unit Image for recognizing mark
  • the exposure material and the exposure mask are aligned based on positional information between the recognition unit and at least a part of the first alignment mark recognized by the image recognition unit and the second alignment mark.
  • An alignment control unit and an exposure start timing control unit that starts irradiation of exposure light from the light source before the movement of the imaging unit is completed.
  • “Material to be exposed” refers to an object to be exposed. “Material to be exposed” includes a substrate having a surface to be exposed and a base material. As an example of “material to be exposed”, exposure is performed to produce a glass substrate, a photosensitive film, and a liquid crystal panel on which a photoresist film is laminated. There are various members to be used. “Before the movement of the imaging unit is completed” is before the movement of the imaging unit is completed and the imaging unit stops at a predetermined position.
  • “before the movement of the imaging unit is completed” includes “before the movement of the imaging unit”, “simultaneously with the start of the movement of the imaging unit”, and “after the movement of the imaging unit is started and before the movement of the imaging unit is completed "including.
  • the light source emits exposure light while moving.
  • the microlens array is between the first alignment mark provided on the exposed material and the second alignment mark provided on the exposure mask while the imaging unit is imaging. While moving in one direction and the light source irradiates exposure light, it moves in the opposite direction of the one direction together with the light source.
  • the microlens array moves between the first alignment mark provided on the exposed material and the second alignment mark provided on the exposure mask while the imaging unit is imaging.
  • the imaging unit captures at least a part of the first alignment mark imaged on the exposure mask through the moving microlens array together with the second alignment mark a plurality of times or continuously.
  • the image recognizing unit generates a composite image for identifying the position of the first alignment mark with respect to the second alignment mark by superimposing images captured multiple times or continuously. You may comprise so that it may do.
  • the present invention also relates to a method for producing an exposed material.
  • a light source for irradiating exposure material with exposure light an exposure mask held between the light source and the exposure material, and a microlens array disposed between the exposure material and the exposure mask
  • An exposed material manufacturing method for manufacturing an exposed material using an exposure apparatus comprising: a first alignment mark provided on an exposed material and a second alignment provided on an exposure mask At least a portion of the first alignment mark imaged on the exposure mask via the microlens array, for aligning the object to be exposed and the exposure mask using the mark for exposure, Image recognition of the second alignment mark on the mask by the imaging unit, image recognition of at least a part of the first alignment mark imaged by the imaging step and the second alignment mark Recognized And an exposure material and an exposure mask based on position information of at least a part of the first alignment mark and the second alignment mark recognized by the image recognition step, An alignment step in which the alignment control unit aligns, an imaging unit moving step in which the imaging unit moves in a predetermined direction so as
  • the “exposed material” refers to an exposed material, and the “exposed material” is exposed.
  • the “exposed material” includes an exposed substrate and a base material.
  • an exposure step of irradiating exposure light while the light source moves is further included.
  • the microlens array moves in one direction between the first alignment mark provided on the exposed material and the second alignment mark provided on the exposure mask, In the exposure step, the microlens array moves in the reverse direction of one direction together with the light source.
  • the microlens array moves between the first alignment mark provided on the exposure material and the second alignment mark provided on the exposure mask, and the moving microlens array
  • the imaging unit images at least a part of the first alignment mark imaged on the exposure mask via the second alignment mark a plurality of times or continuously with the second alignment mark.
  • the image recognition unit May be configured to generate a composite image for specifying the position of the first alignment mark with respect to the second alignment mark by superimposing images captured multiple times or continuously.
  • An exposure apparatus includes an imaging unit that images at least a part of a first alignment mark imaged on an exposure mask via a microlens array and a second alignment mark; An image recognition unit that recognizes at least a part of the first alignment mark imaged by the imaging unit and the second alignment mark is provided. Since at least a part of the first alignment mark to be imaged is formed on the exposure mask through the microlens array, the imaging unit has the second position provided on the exposure mask. At least a part of the alignment mark and the first alignment mark imaged on the exposure mask via the microlens array can be imaged on the same plane. Therefore, the first alignment mark and the first alignment mark, which are caused by the distance between the material to be exposed provided with the first alignment mark and the exposure mask provided with the second alignment mark, The shift of the image forming position of the alignment mark 2 can be eliminated.
  • a method of adjusting the optical path length of the optical path with respect to the imaging object is not employed in order to eliminate the above-described shift of the imaging position. Therefore, even when the optical axis of the imaging unit that images the first and second alignment marks deviates from a predetermined angle, the first image that is captured by the imaging unit and recognized by the image recognition unit. The relative positions of the second alignment mark and the second alignment mark do not change. Therefore, the relative position of the exposure mask and the material to be exposed can be specified more accurately.
  • the exposure apparatus also includes an imaging unit that moves in a predetermined direction so as not to prevent exposure to the exposed material when imaging is completed, and exposure from the light source before the movement of the imaging unit is completed.
  • An exposure start timing control unit for starting light irradiation is provided. Therefore, since the exposure is started before the movement of the image pickup unit is completed, a delay in work time using the exposure apparatus can be eliminated.
  • the relative position of the exposure mask and the exposed material can be more accurately specified in the exposure of the exposed material without using a complicated and expensive mechanism.
  • a delay in work time using the exposure apparatus can be eliminated.
  • the microlens array is arranged in one direction between the first alignment mark provided on the exposed material and the second alignment mark provided on the exposure mask while the imaging unit is imaging.
  • the light source is configured to move in the opposite direction of the one direction while the light source irradiates the exposure light
  • the first alignment mark imaging and the exposure of the exposed material are performed.
  • the imaging unit images at least a part of the first alignment mark imaged on the exposure mask through the moving microlens array together with the second alignment mark a plurality of times or continuously.
  • image recognition is to generate a composite image for specifying the position of the first alignment mark with respect to the second alignment mark by superimposing images captured multiple times or continuously.
  • the position information of the first alignment mark is obtained by superimposing partial images of the first alignment mark formed on the exposure mask via the microlens array. You can get more. Therefore, the position of the first alignment mark imaged by the microlens array can be specified more reliably.
  • An exposed material manufacturing method includes at least a part of a first alignment mark imaged on an exposure mask via a microlens array, and a second alignment mark of the exposure mask.
  • An imaging step in which the imaging unit images an image recognition step in which an image recognition unit that recognizes at least a part of the first alignment mark and the second alignment mark imaged in the imaging step, and including.
  • the imaging unit Since at least a part of the first alignment mark to be imaged is formed on the exposure mask through the microlens array, the imaging unit has the second position provided on the exposure mask. At least a part of the alignment mark and the first alignment mark imaged on the exposure mask via the microlens array can be imaged on the same plane. Therefore, the first alignment mark and the first alignment mark, which are caused by the distance between the material to be exposed provided with the first alignment mark and the exposure mask provided with the second alignment mark, The shift of the image forming position of the alignment mark 2 can be eliminated.
  • a method of adjusting the optical path length of the optical path with respect to the imaging object is not employed in order to eliminate the shift of the imaging position.
  • the optical axis of the imaging unit that images the first and second alignment marks deviates from a predetermined angle, the first image that is captured by the imaging unit and recognized by the image recognition unit.
  • the relative positions of the second alignment mark and the second alignment mark do not change. Therefore, the relative position of the exposure mask and the material to be exposed can be specified more accurately.
  • the exposed material manufacturing method includes an imaging unit moving step in which the imaging unit moves in a predetermined direction so as not to prevent exposure to the exposed material after imaging in the imaging step is completed, and an imaging unit Before the movement of the imaging unit in the moving step is completed, the exposure start timing control unit starts exposure of exposure light from the light source to the exposed material and the exposure mask aligned in the alignment step. Steps.
  • the exposure start step the light source starts exposure before the movement of the imaging unit is completed, so that it is possible to eliminate a delay in work time using the exposure apparatus.
  • the exposure mask and the exposed material can be positioned more accurately in the exposure of the exposed material without using a complicated and expensive mechanism. It is possible to accurately specify, and in addition, delay of working time using the exposure apparatus can be eliminated.
  • the exposure step of irradiating the exposure light while moving the light source is further included, it is possible to use a smaller light source and to save space in the exposure apparatus.
  • the microlens array moves in one direction between the first alignment mark provided on the exposed material and the second alignment mark provided on the exposure mask.
  • the microlens array can be used to perform the imaging of the first alignment mark and the exposure of the exposed material in a smaller and common microlens. It can be performed using an array. Since a large microlens array is expensive, the exposure of the first alignment mark and exposure of the exposed material can be performed using a smaller and common microlens array. Cost can be reduced.
  • the imaging unit images at least a part of the first alignment mark imaged on the exposure mask via the moving microlens array a plurality of times or continuously with the second alignment mark.
  • a composite image for specifying the position of the first alignment mark with respect to the second alignment mark is obtained by superimposing images captured multiple times or continuously by the image recognition unit.
  • the position of the first alignment mark is obtained by superimposing partial images of the first alignment mark formed on the exposure mask via the microlens array. More information can be acquired. Therefore, the position of the first alignment mark imaged by the microlens array can be specified more reliably.
  • FIG. 1 is a side view of an exposure apparatus according to a first embodiment.
  • A It is the top view which looked at the mask for exposure shown in FIG. 1 from the to-be-exposed material side.
  • B It is the top view which looked at the to-be-exposed material shown in FIG. 1 from the light source part side.
  • C It is a top view of the 1st mark for alignment and the 2nd mark for alignment shown in FIG.
  • A It is a schematic diagram which shows the structure of the microlens array shown in FIG.
  • B It is a schematic diagram which shows the positional relationship of the field stop and aperture stop of the microlens array shown in FIG. It is a schematic diagram which shows the arrangement
  • FIG. 1 shows a side view of an exposure apparatus according to the first embodiment.
  • the exposure apparatus according to the first embodiment exposes a material to be exposed through an exposure mask having a predetermined mask pattern.
  • the exposure apparatus 1 includes a light source unit 3 that irradiates exposure material 2 with exposure light, an exposure mask 4 that is held between the light source unit 3 and the exposure material 2, an exposure material 2, and an exposure mask 4. And a microlens array 6 disposed between the two.
  • the exposure apparatus 1 uses the first alignment mark 7 provided on the exposure material 2 and the second alignment mark 8 provided on the exposure mask 4 to expose the exposure material 2 and the exposure material 2.
  • the imaging mask 10 is configured to align with the mask 4 for imaging, and the imaging unit 10 that images the first alignment mark 7 and the second alignment mark 8, and the captured first alignment mark 7.
  • an image recognition unit 12 for recognizing the second alignment mark 8 and a control unit 14 for executing various controls.
  • the control unit 14 controls the position of the exposure mask relative to the exposed material based on the position information of the first alignment mark 7 and the second alignment mark 8 recognized by the image recognition unit 12.
  • An alignment control unit 16, a camera retract movement control unit 17 that controls movement of the imaging unit, and an exposure start timing control unit 18 that starts irradiation of exposure light from the light source unit are provided.
  • the exposed material 2 is a glass substrate having a photoresist layer on the exposure side surface 2a.
  • This glass substrate is, for example, G6 size (about 1850 mm ⁇ 1500 mm).
  • the exposed glass substrate is used for a color filter of a liquid crystal panel member as an example.
  • the exposed material 2 is supported by a support portion (not shown).
  • the light source unit 3 includes a light source such as an ultra-high pressure mercury lamp or a xenon flash lamp, and the exposure wavelength range is 280 nm to 400 nm as an example.
  • the light source unit 3 includes a photo integrator and a condenser lens.
  • the photo integrator makes the luminance distribution in the cross section of the exposure light emitted from the light source unit 3 uniform.
  • the photo integrator may be a fly-eye lens, a rod lens, a light pipe, or the like.
  • the exposure light having a uniform luminance distribution enters the condenser lens and becomes parallel light having a uniform luminance distribution.
  • the optical axis of the parallel light is set in a direction perpendicular to the exposure side surface 2a of the exposed material 2.
  • the light source unit 3 is configured to be movable in the X-axis direction by an arbitrary driving means (not shown), and irradiates the exposed material 2 with exposure light while moving.
  • the irradiation area of the exposure material 2 is 150 mm in the X-axis direction and 450 mm in the Y-axis direction (perpendicular to the paper surface in FIG. 1) perpendicular to the X-axis.
  • the light source unit 3 is disposed about 1 m above the exposure mask 4.
  • the exposure mask 4 is a glass photomask formed in a plate shape.
  • FIG. 2A shows a mask surface 4a on the side facing the material 2 to be exposed.
  • the exposure mask 4 is rectangular, the short side of the exposure mask 4 extends in the X-axis direction, and the long side of the exposure mask 4 is the X-axis and the Y-axis direction perpendicular to the X-axis (perpendicular to the paper surface in FIG. 1). ).
  • the exposure mask 4 has a predetermined mask pattern 20 including a light shielding region that shields exposure light from the light source unit 3 and a light-transmitting region that transmits exposure light from the light source unit 3.
  • the pattern area where the mask pattern 20 is formed in the exposure mask 4 is rectangular.
  • the exposure material 2 is exposed to a predetermined pattern by irradiating the exposure side surface 2a of the exposure material 2 with the exposure light transmitted through the exposure mask 4.
  • the light shielding region is formed by laminating a light shielding film on one surface of the glass substrate.
  • the light shielding film is an opaque thin film that shields exposure light, and as an example, is a thin film of chromium (Cr).
  • Cr chromium
  • the portion where the opaque thin film is not laminated becomes a light transmitting region because the glass substrate transmits the exposure light.
  • the mask pattern 20 is a pattern in which light shielding regions and light transmission regions extending in a straight line are alternately arranged.
  • the exposure mask 4 is held between the light source unit 3 and the exposed material 2 by an arbitrary mask holding means.
  • the distance between the exposed material 2 and the exposure mask 4 is about 5 to 15 mm.
  • the exposure mask 4 held by the mask holding means can be moved in the X-axis direction and the Y-axis direction perpendicular to the X-axis direction (perpendicular to the paper surface in FIG. 1) by an arbitrary driving means (not shown). .
  • each second alignment mark 8 is disposed near the center of each short side of the pattern region outside the pattern region.
  • the second alignment mark 8 formed on the mask surface 4 a passes through the light-transmitting portion of the exposure mask 4. Images can be taken from the imaging unit 10. The exposure light is not irradiated outside the pattern area of the mask pattern 20.
  • FIG. 2B shows an exposure side surface 2a of the material 2 to be exposed.
  • the exposed material 2 has an exposure region 21.
  • the exposure area 21 is formed in a rectangle having the same size as the rectangle of the pattern area in which the mask pattern 20 is formed.
  • the short side of the exposure region 21 extends in the X-axis direction, and the long side of the exposure region 21 extends in the Y-axis direction (perpendicular to the paper surface in FIG. 1) perpendicular to the X-axis and the X-axis.
  • the length of the long side of the exposure region 21 is 450 mm, which corresponds to the length in the Y-axis direction of the irradiation region described above.
  • Two first alignment marks 7 are provided for one exposure region 21. Each first alignment mark 7 is arranged near the center of each short side of the exposure region 21 outside the exposure region 21.
  • FIG. 2C shows an enlarged view of the first alignment mark 7 and the second alignment mark 8.
  • the second alignment mark 8 is formed in a rectangular frame shape
  • the first alignment mark 7 is rectangular.
  • the first alignment mark 7 is used for the second alignment.
  • the exposure mask 4 and the exposed material 2 are correctly aligned. Therefore, by aligning the center of the first alignment mark 7 with the center of the second alignment mark 8, the exposure mask 4 and the exposed material 2 can be aligned.
  • the imaging unit 10 is a single CCD (Charge Coupled Device) camera having a field of view of about 1.5 mm square, and includes a single focus lens and a camera light source.
  • the imaging unit 10 employs a coaxial epi-illumination method, and uses an optical system such as a half mirror to match the optical axis of illumination irradiated from the camera light source to the object with the optical axis of the single focus lens. .
  • the optical axis 11 of illumination irradiated from the imaging unit 10 toward the exposure mask 4 is set perpendicular to the mask surface 4 a of the exposure mask 4.
  • Laser light or lamp light transmitted through an interference filter may be used as the camera light source, and a halogen lamp may be used as the lamp light source.
  • the camera light source emits red light having a wavelength of about 600 nm.
  • the imaging unit 10 is configured to be movable by any driving means (not shown).
  • the image recognition unit 12 recognizes an image picked up by the image pickup unit 10.
  • the image recognition unit 12 has a function of generating a composite image by performing image processing on a captured image group.
  • the image recognition unit 12 generates a composite image for specifying the position of the first alignment mark 7 with respect to the second alignment mark 8 by superimposing images captured multiple times or continuously. can do.
  • the image recognition unit 12 and the control unit 14 include, for example, a calculation unit such as a CPU and a storage unit such as a memory, and executes a predetermined program.
  • the microlens array 6 is an array of microlenses, and in this embodiment, the microlens array 6 constitutes a 1 ⁇ upright projection lens.
  • the exposure light irradiated from the light source unit 3 through the exposure mask 4 is further applied to the exposed material 2 through the microlens array 6.
  • FIG. 3A shows the configuration of the microlens array 6.
  • the microlens array 6 has a structure in which four unit microlens arrays 61, 62, 63, 64 are laminated.
  • Each of the unit microlens arrays 61, 62, 63, and 64 includes a plurality of microlenses 60 formed of two convex lenses. Therefore, the exposure light that has entered the unit microlens array 61 through the exposure mask 4 once converges between the unit microlens array 62 and the unit microlens array 63 and is positioned below the unit microlens array 64. An image is formed on the exposure-side surface 2a of the material 2 to be exposed.
  • an inverted equal magnification image of the mask pattern 20 of the exposure mask 4 is formed between the unit microlens array 62 and the unit microlens array 63, and the mask pattern is formed on the exposure side surface 2 a of the exposed material 2. Twenty erecting equal-magnification images are formed.
  • a field stop 67 is disposed between the unit microlens array 62 and the unit microlens array 63, and an aperture stop 66 is disposed between the unit microlens array 63 and the unit microlens array 64.
  • a field stop 67 and an aperture stop 66 are provided for each microlens 60.
  • the field stop 67 is formed in a hexagonal shape, and the field stop is narrowed down to a hexagonal shape near the imaging position.
  • the aperture stop 66 is formed in a circular shape, defines the numerical aperture (NA) of each microlens 60, and shapes the light transmission region of the microlens 60 into a circular shape.
  • FIG. 3B The relationship between the field stop 67 and the aperture stop 66 is shown in FIG. As shown in FIG. 3B, the field stop 67 is formed in the aperture stop 66 as a hexagonal opening. Therefore, the exposure light transmitted through the microlens 60 is irradiated only from the region surrounded by the hexagon shown in FIG.
  • the positional relationship of the field stop 67 in the microlens array 6 is shown in FIG.
  • the microlens array 6 is configured to be movable by any driving means (not shown).
  • the size of the microlens array 6 is substantially the same as the size of the irradiation region from the light source unit 3, and the microlens array 6 moves in the X-axis direction in synchronization with the light source unit 3 that irradiates exposure light.
  • the exposed material 2 is exposed through an exposure mask 4 and a moving microlens array 6.
  • the plurality of microlenses 60 are arranged side by side in the Y-axis direction perpendicular to the X-axis to form a microlens array.
  • a plurality of microlens rows are arranged in the X-axis direction.
  • the hexagon of each field stop 67 is composed of a central rectangular portion 67a, a triangular portion 67b on the left side, and a triangular portion 67c on the right side.
  • the opening area of the left triangular portion 67b and the right triangular portion 67c is 1 ⁇ 2 of the opening area of the quadrangular portion 67a.
  • the plurality of microlens rows are arranged so as to be shifted from each other so that the triangular portion 67b of the next microlens row is located at a position corresponding to the triangular portion 67c of the microlens row.
  • the plurality of microlens rows are arranged to form a group of three rows, and the first and fourth microlens rows are arranged in the Y-axis direction. Are the same.
  • the microlens array 6 moves in the upward direction of FIG. 4 along the X axis in synchronization with the light source unit 3 that irradiates the exposure light, the first row of the exposure lens 2 on the exposure side surface 2a
  • the area exposed through the right triangular portion 67c of the field stop 67 of the microlens column is subsequently exposed through the left triangular portion 67b of the field stop 67 of the second microlens column.
  • the micro lens array is not exposed.
  • the area exposed through the rectangular portion 67a of the field stop 67 of the first microlens array is not exposed in the second and third microlens arrays.
  • the area exposed through the left triangular portion 67b of the field stop 67 of the first microlens array is not exposed by the second microlens array, and the right side of the field stop 67 of the third microlens array. Exposure is made through the triangular portion 67c.
  • the exposure side surface 2a of the exposure object 2 is exposed through the two triangular portions 67b and 67c of the field stop 67 every time three micro lens rows pass, or one exposure lens 2 is exposed. It exposes through the square part 67a. Since the opening area of the left triangular portion 67b and the right triangular portion 67c is 1 ⁇ 2 of the opening area of the rectangular portion 67a, the exposed material 2 is exposed with a uniform amount of light each time three micro lens rows pass. Will receive. Therefore, the exposure object 2 is exposed with a uniform amount of light by configuring the microlens array 6 so that 3n (n is a natural number) microlens arrays move on the exposure area 21 of the exposure object 2. can do.
  • the microlens array 6 is used for aligning the exposure mask 4 and the exposed material 2 that are executed prior to the exposure processing, in addition to the exposure processing for the exposed material 2.
  • the microlens array 6 is configured to move between the first alignment mark 7 and the second alignment mark 8 in the X-axis direction.
  • the first alignment mark 7 forms an image on the mask surface 4 a on the side facing the exposed material 2 in the exposure mask 4 via the microlens array 6.
  • the second alignment mark 8 is formed on the mask surface 4a, it is formed on at least a part of the first alignment mark 7 imaged via the microlens array 6 and the mask surface 4a.
  • the second alignment mark 8 is positioned on the same plane. Therefore, the imaging unit 10 can image the first alignment mark 7 and the second alignment mark 8 on the same plane.
  • FIG. 5A to 5C show the microlens array 6 and an image of the first alignment mark 7 that forms an image on the mask surface 4a via the microlens array 6.
  • FIG. As described above, the field stop 67 is disposed between the unit microlens array 62 and the unit microlens array 63. Therefore, the image of the first alignment mark 7 formed on the mask surface 4 a is an image corresponding to the hexagonal opening of the field stop 67.
  • the microlens array 6 includes the first alignment mark 7 provided on the exposed material 2 and the second mask provided on the exposure mask 4 while the imaging unit 10 is imaging. It moves between the alignment marks 8. The imaging unit 10 images at least a part of the first alignment mark 7 imaged on the exposure mask 4 via the moving microlens array 6 together with the second alignment mark 8 a plurality of times.
  • FIG. 5A shows an image of the first alignment mark 7 when the microlens array 6 is at the first position.
  • the edge on the left side of the first alignment mark 7 is not located at a position corresponding to the opening of the field stop 67, so that no image is formed on the mask surface 4a.
  • An image of the first alignment mark 7 imaged at the first position is shown on the right side of the microlens array 6.
  • 5A to 5C for the sake of explanation, only the image of the first alignment mark 7 is shown in the captured image.
  • a two-dot chain line surrounding a partial image of the first alignment mark 7 in a quadrangle is a virtual line, and the position of the corresponding edge of the first alignment mark 7 is virtually illustrated for the sake of explanation. It is displayed.
  • FIG. 5B shows an image of the first alignment mark 7 when the microlens array 6 is at the second position.
  • the edge on the right side of the first alignment mark 7 is not located at the position corresponding to the opening of the field stop 67, so that no image is formed on the mask surface 4a.
  • the image of the first alignment mark 7 imaged at the second position is superimposed on the image of the first alignment mark 7 previously imaged at the first position by the image recognition unit 12. Is done.
  • This superimposed image is shown on the right side of the microlens array 6. In this way, by superimposing the image of the first alignment mark 7 imaged at the second position on the image of the first alignment mark 7 imaged at the first position, The left and right edges of the alignment mark 7 can be detected.
  • FIG. 5C shows an image of the first alignment mark 7 when the microlens array 6 further moves in the movement direction D1 and reaches the third position.
  • the image of the first alignment mark 7 picked up at the third position is superimposed on the image picked up at the first and second positions by the image recognition unit 12.
  • a partial image of the first alignment mark 7 formed on the mask surface 4 a through the microlens array 6 is captured a plurality of times, and a plurality of images are captured.
  • the edge of the first alignment mark 7 can be detected more reliably. Therefore, the center position of the first alignment mark 7 can be specified more accurately.
  • the spatial imaging interval is set to an interval that does not become an integral multiple of the arrangement pitch of the microlens rows in the microlens array 6. Further, it is desirable that the number of times of imaging is equal to or greater than the number of microlens rows constituting the microlens row group. As described above, in the present embodiment, since the microlens array 6 forms one group by three microphone lens rows, it is desirable that the number of times of imaging is three or more.
  • FIG. 5D shows a composite image obtained by superimposing the three images picked up in FIGS. 5A to 5C.
  • the imaging unit 10 can simultaneously capture a partial image of the first alignment mark 7 formed on the mask surface 4a and the second alignment mark 8 in the same image.
  • the second alignment mark 8 is formed on the mask surface 4a of the exposure mask 4, and the imaging unit 10 performs imaging without moving during imaging. Accordingly, the position of the second alignment mark 8 does not change in the image captured a plurality of times.
  • FIG. 5D as an example for explanation, a case where the first alignment mark 7 is shifted to the lower right side toward the second alignment mark 8 is illustrated.
  • FIG. 2C in this embodiment, the position where the center of the first alignment mark 7 and the center of the second alignment mark 8 coincide with the exposure mask 4 and the object to be exposed.
  • the material 2 is correctly placed.
  • the center of the first alignment mark 7 is specified from the composite image, and the exposure mask 4 and the exposed material 2 are aligned so as to coincide with the center of the second alignment mark 8. Can do.
  • FIG. 6 and 7 show the positional relationship between the constituent members in the exposure apparatus 1
  • FIG. 8 shows the steps related to the operation of the exposure apparatus 1 and the method of manufacturing the exposed material using the exposure apparatus 1.
  • FIG. 6A the exposure mask 4 and the exposed material 2 are aligned prior to the exposure of the exposed material 2.
  • the imaging unit 10 is arranged outside the exposure mask 4, and the microlens array 6 includes the exposed material 2 and the exposure mask 4. Between them.
  • the imaging unit 10 moves in the movement direction D2, and as shown in FIG. Above the mark 7 and the second alignment mark 8, it stops at a predetermined position for imaging.
  • the moving direction D2 of the imaging unit 10 is the same direction as the moving direction D1 of the microlens.
  • the alignment of the exposure mask 4 and the exposed material 2 using the first alignment mark 7 and the second alignment mark 8 is performed with extremely high accuracy (for example, the exposure material 2 and the exposure mask 4). , About ⁇ 1 ⁇ m). Therefore, the exposure mask 4 and the material 2 to be exposed before this high-precision alignment include the image of the first alignment mark 7 formed on the mask surface 4a via the microlens array 6, and the exposure mask. 4 and the second alignment mark 8 provided at 4 are positioned so as to be captured in the same image by the imaging unit 10.
  • the light source unit 3 is placed stationary above the end of the exposure mask 4 until the exposure of the exposed material 2 starts.
  • the imaging unit 10 stops at a predetermined position for imaging, as shown in FIG. 6B, the microlens array 6 moves in the moving direction D1, and is connected to the exposure mask 4 via the moving microlens array 6.
  • At least a part of the imaged first alignment mark 7 and the second alignment mark 8 provided on the exposure mask 4 are imaged by the imaging unit 10 (FIG. 8, step 1). This imaging is performed a plurality of times as described above with reference to FIG.
  • the exposed material 2, the exposure mask 4, and the imaging unit 10 are fixed at predetermined positions without moving.
  • the image recognition unit 12 generates a composite image (see FIG. 5D) obtained by superimposing a plurality of captured images, and the captured first alignment mark is captured from the composite image. 7 and the second alignment mark 8 are recognized (FIG. 8, step 2). Next, the exposure material 2 and the exposure mask 4 are aligned based on the positional information of the recognized first alignment mark 7 and at least a part of the second alignment mark 8 (step 3). ). In the present embodiment, as described above, the position where the centers of the first alignment mark 7 and the second alignment mark 8 coincide is the correct positional relationship between the exposure mask 4 and the material to be exposed. .
  • the center position of the first alignment mark 7 and the second position are determined from at least a part of the first alignment mark 7 and the second alignment mark 8 in the composite image (see FIG. 5D).
  • the center position of the alignment mark 8 is specified by the image recognition unit 12.
  • the position of the exposure mask 4 is adjusted by an alignment control unit 16 via an arbitrary driving means so that the center of the first alignment mark 7 and the center of the second alignment mark 8 coincide. Adjusted.
  • the camera retraction movement control unit 17 performs image capturing so that the image capturing unit 10 that is stationary at the predetermined image capturing position does not hinder the exposure of the material to be exposed 2.
  • the unit 10 is moved in a predetermined direction via any driving means (FIG. 8, step 4).
  • the exposure start timing control unit 18 starts irradiation of exposure light from the light source unit 3 before the movement of the imaging unit 10 is completed (step 5). While the material to be exposed 2 is being exposed, the material to be exposed 2 and the exposure mask 4 are fixed at the aligned positions without moving.
  • step 4 the imaging unit 10 starts moving in the moving direction D3 as shown in FIG.
  • the light source unit 3 starts irradiation of the exposure light 5 simultaneously with the start of the movement of the imaging unit 10.
  • the light source unit 3 moves in the moving direction D4 while irradiating the exposure light 5.
  • the microlens array 6 moves in the movement direction D5 in synchronization with the light source unit 3.
  • the moving directions D3 to D5 are the same direction, which is the reverse direction of the moving direction D1 of the microlens array 6 during imaging.
  • the imaging unit 10 moves to a predetermined retracted position outside the exposure mask 4 and stops.
  • the light source unit 3 moves from one end of the exposure mask 4 to the other end together with the microlens array 6 while irradiating the exposure light 5 to complete the exposure of the exposed material 2 to the exposure region 21.
  • the exposure apparatus 1 As described above, the exposure apparatus 1 according to the first embodiment is described by taking as an example the alignment and exposure of the exposure mask 4 with respect to one exposure area 21 and the exposure area 21 formed on the exposed material 2. However, the exposure apparatus 1 is configured such that a plurality of exposure regions 21 formed on the exposed material 2 can be exposed simultaneously.
  • FIG. 9 shows an exposure side surface 2a of the exposure target material 2 on which a plurality of exposure regions 21 are formed.
  • the exposure apparatus 1 can simultaneously expose four exposure areas 4 at a time by arranging four exposure masks 4 for four exposure areas out of the exposure areas 21a to 21p. It is configured as follows. The four exposure masks 4 are held by mask holding means (not shown).
  • each exposure mask 4 is set in the exposure regions 21a, 21c, 21i, and 21k, and the alignment of each exposure mask 4 and the material 2 to be exposed (FIG. 8, step). 1 to 3) are executed.
  • the four imaging units 10 arranged corresponding to the four exposure masks 4 move simultaneously (FIG. 8, step 4).
  • irradiation of the exposure light 5 from the four light source units 3 respectively arranged corresponding to the four exposure masks 4. are simultaneously started (step 5 in FIG.
  • each light source unit 3 moves in synchronization with each corresponding microlens while irradiating each exposure region 21a, 21c, 21i, 21k with exposure light 5. (See FIG. 7 (c)).
  • the next exposure areas 21b, 21d, 21j, and 21l are arbitrarily set to correspond to the four exposure masks 4 that are held.
  • the object to be exposed 2 is moved in the X-axis direction (FIG. 1) by the driving means (not shown).
  • the next exposure areas 21f, 21h, 21n The exposed material 2 is moved in the Y-axis direction (perpendicular to the paper surface in FIG. 1) so that 21p corresponds.
  • the next exposure areas 21e, 21g, and 21m are further continued with respect to the four exposure masks 4.
  • 21o are moved in the X-axis direction so as to correspond to each other.
  • the imaging unit 10 includes the second alignment mark 8 provided on the exposure mask 4 and the first alignment mark 7 imaged on the exposure mask 4 via the microlens array 6. At least a part can be imaged on the same plane. Therefore, it is possible to eliminate the deviation of the imaging positions of the first alignment mark 7 and the second alignment mark 8 due to the distance between the exposure object 2 and the exposure mask 4.
  • the exposure apparatus 1 does not employ a method of adjusting the optical path length of the optical path with respect to the object to be imaged in order to eliminate the shift of the imaging position. Therefore, the optical axis 11 of the imaging unit 10 that captures the first alignment mark 7 and the second alignment mark 8 deviates from a predetermined angle and is inclined with respect to the mask surface 4 a of the exposure mask 4. Even if it is tilted, the relative positions of the first alignment mark 7 and the second alignment mark 8 captured by the imaging unit 10 and recognized by the image recognition unit 12 are It does not change. Therefore, the relative positions of the exposure mask 4 and the exposed material 2 can be specified more accurately.
  • the exposure apparatus 1 in order to image the first alignment mark 7 and the second alignment mark 8, there is no need to provide two optical paths having different optical path lengths and optical path length adjusting means for each optical path. In addition, it is not necessary to place an alignment reticle on the optical axis of each optical path. Therefore, a complicated mechanism requiring cost is not required for aligning the exposure mask 4 and the exposed material 2.
  • the imaging unit 10 in the exposure apparatus 1 is a single camera, and the first alignment mark 7 imaged on the exposure mask 4 via the microlens array 6 and the second alignment mark. 8 are simultaneously captured in the same image. Therefore, the first alignment mark 7 and the second alignment mark 8 are compared with the case where the first alignment mark 7 and the second alignment mark 8 are separately captured by different cameras, respectively. The relative positional relationship of the mark 8 can be specified more accurately.
  • the imaging unit 10 moves in a predetermined direction so as not to prevent exposure to the exposed material 2, and the movement of the imaging unit 10 is completed.
  • the exposure start timing control unit 18 is configured to start irradiation of the exposure light 5 from the light source unit 3 with respect to the exposure target material 2 and the exposure mask 4 that have been aligned. Therefore, since the exposure is started before the movement of the imaging unit 10 is completed, a delay in work time using the exposure apparatus 1 can be eliminated.
  • the light source unit 3 is configured to irradiate the exposure light 5 while moving, a smaller light source can be used, and space saving in the exposure apparatus 1 can be achieved.
  • the microlens array 6 is configured to be movable between the exposed material 2 and the exposure mask 4, the imaging of the first alignment mark 7 and the exposure of the exposed material 2 can be performed more. It can be implemented using a small and common microlens array 6. Since the large-sized microlens array 6 is expensive, the imaging of the first alignment mark 7 and the exposure of the exposed material 2 can be performed using a smaller and common microlens array 6. The manufacturing cost of the exposure apparatus 1 can be reduced.
  • the imaging unit 10 together with the second alignment mark 8, at least part of the first alignment mark 7 formed on the exposure mask 4 via the moving microlens array 6.
  • the image recognition unit 12 generates a composite image obtained by superimposing images captured a plurality of times. In this way, the position information of the first alignment mark 7 is obtained by superimposing the partial images of the first alignment mark 7 formed on the exposure mask 4 through the microlens array 6. You can get more. Therefore, the position of the first alignment mark 7 imaged by the microlens array 6 can be specified more reliably.
  • the present invention is not limited to the above-described embodiments, and various modifications and changes can be made based on the technical idea of the present invention.
  • the plurality of exposure masks 4 are simultaneously arranged in the plurality of exposure regions 21a to 21p, but the present invention is not limited to this.
  • a single exposure mask 4 may be used.
  • the plurality of exposure regions 21a to 21p are formed on the exposure target material 2, but the present invention is not limited to this.
  • a single exposure region 21 may be formed on the material 2 to be exposed.
  • the shapes of the first alignment mark 7 and the second alignment mark 8 are not limited to those illustrated in FIG. Any mark may be used as long as the position of the first alignment mark 7 and the second alignment mark 8 can be specified.
  • the number of the first alignment mark 7 and the second alignment mark 8 is desirably two or more with respect to the exposure region in order to maintain alignment accuracy, but the number is not limited. .
  • the arrangement positions of the first alignment mark 7 and the second alignment mark 8 are not limited to the positions illustrated in FIGS. 2 (a) and 2 (b).
  • four first alignment marks 7 may be arranged for each exposure area, or each first alignment mark 7 may be arranged at the four corners outside each exposure area. Good.
  • the imaging unit 10 is configured to move in a predetermined direction after the alignment of the exposure mask 4 and the material to be exposed 2 is completed, but is not limited thereto.
  • the imaging unit 10 can start moving before the alignment between the exposure mask 4 and the exposed material 2 is completed.
  • the exposure start timing control unit 18 irradiates the exposure light 5 from the light source unit 3 after the alignment of the exposure mask 4 and the exposed material 2 is completed and before the movement of the imaging unit 10 is completed. To start. If the movement of the imaging unit 10 is not completed, irradiation of the exposure light 5 from the light source unit 3 may be started.
  • the irradiation start of the exposure light 5 may be before the movement of the imaging unit 10 is started, may be simultaneously with the start of the movement of the imaging unit 10, and after the movement of the imaging unit 10 is started and the movement of the imaging unit 10 May be before completion.
  • the imaging unit 10 uses at least a part of the first alignment mark 7 imaged on the exposure mask 4 via the moving microlens array 6 as a second alignment mark.
  • the present invention is not limited to this.
  • the alignment of the exposure mask 4 and the exposed material 2 may be executed.
  • the temporal imaging interval may be extremely short (for example, 30 times per second), continuous imaging may be performed, and a composite image may be generated by superimposing continuously captured images.
  • the imaging unit 10 is a CCD camera that adopts a coaxial epi-illumination method using a built-in camera light source, but is not limited thereto.
  • the camera light source may not be built in the CCD camera, and a single light source may be provided as a separate camera light source.
  • a CMOS (complementary metal oxide semiconductor) camera may be used instead of the CCD camera.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

La position relative d'un masque d'exposition et d'un matériau cible d'exposition est déterminée avec plus de précision sans utiliser un mécanisme complexe et coûteux. De plus, les retards dans le temps de travail lorsqu'un dispositif d'exposition à la lumière est utilisé sont éliminés. Un dispositif d'exposition à la lumière est équipé d'une unité d'imagerie qui prend une Image d'au moins une partie d'une première marque de positionnement et d'une seconde marque de positionnement formée sur un masque d'exposition à travers un réseau de microlentilles, et qui, lorsque la prise d'images se termine, se déplace dans la direction spécifiée, de sorte que la lumière d'exposition dirigée vers la cible d'exposition ne soit pas obstruée lorsque l'image de la seconde marque de position est prise ; un contrôleur de positionnement pour positionner le matériau cible d'exposition et le masque d'exposition sur la base des informations de position des première et deuxième marques de positionnement ; et une unité de commande du moment de démarrage pour lancer la lumière d'exposition provenant de la source de lumière avant la fin du mouvement de l'unité d'imagerie.
PCT/JP2013/050011 2012-01-06 2013-01-04 Dispositif d'exposition à la lumière et procédé de fabrication du matériau exposé WO2013103152A1 (fr)

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CN104702340A (zh) * 2015-02-15 2015-06-10 长芯盛（武汉）科技有限公司 一种光传输端子
JP6744588B2 (ja) * 2015-03-31 2020-08-19 株式会社ニコン 露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、及び露光方法
CN110232867B (zh) * 2019-05-13 2022-01-04 Tcl华星光电技术有限公司 显示面板的母板曝光结构

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JP5842251B2 (ja) 2016-01-13
KR20140119697A (ko) 2014-10-10
JP2013142719A (ja) 2013-07-22
CN104024943B (zh) 2016-03-02
CN104024943A (zh) 2014-09-03

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