WO2013082951A1 - Electrode structure for laminated metallized thin film capacitor - Google Patents

Electrode structure for laminated metallized thin film capacitor Download PDF

Info

Publication number
WO2013082951A1
WO2013082951A1 PCT/CN2012/080132 CN2012080132W WO2013082951A1 WO 2013082951 A1 WO2013082951 A1 WO 2013082951A1 CN 2012080132 W CN2012080132 W CN 2012080132W WO 2013082951 A1 WO2013082951 A1 WO 2013082951A1
Authority
WO
WIPO (PCT)
Prior art keywords
curved
strip
gap
metallized film
void
Prior art date
Application number
PCT/CN2012/080132
Other languages
French (fr)
Chinese (zh)
Inventor
朱健
林晋涛
陈国彬
Original Assignee
厦门法拉电子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 厦门法拉电子股份有限公司 filed Critical 厦门法拉电子股份有限公司
Priority to DE112012005147.5T priority Critical patent/DE112012005147B4/en
Priority to JP2014545065A priority patent/JP5984097B2/en
Priority to US14/362,684 priority patent/US9281122B2/en
Publication of WO2013082951A1 publication Critical patent/WO2013082951A1/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/005Electrodes
    • H01G4/01Form of self-supporting electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/005Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/005Electrodes
    • H01G4/012Form of non-self-supporting electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/30Stacked capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/33Thin- or thick-film capacitors 
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/14Organic dielectrics

Definitions

  • This invention relates to electronic components, and more particularly to an electrode structure for a laminated metallized film capacitor.
  • a film capacitor is one of the capacitors. It is a capacitor with superior performance. It has the following main characteristics: no polarity, high insulation resistance, excellent frequency characteristics (wide frequency response), and low dielectric loss. Due to its small size and large capacity, film capacitors have a wide range of applications and can form different series of products, such as high specific energy storage capacitors, anti-electromagnetic interference capacitors, radiation-resistant capacitors, safety film capacitors, long-life capacitors, and high reliability. Capacitors, high voltage full film capacitors, etc.
  • One form of structure of a film capacitor is made of a metallized film which is formed by vacuum evaporation of a thin layer of metal on a plastic film which is used as an electrode.
  • two or more metallized films and/or a plurality of light films are wound into a capacitor core mother roll by a winding device, and after being processed by a gold injection process, the chips are cut into individual laminated capacitors by a cutter.
  • the core is finally made up of a capacitor using a laminated capacitor core.
  • This laminated metallized film capacitor has a defect.
  • the position of the cut surface of the capacitor core, the insulation distance between the metal electrodes of different potentials is only the thickness of the medium between the electrodes, and the thickness is several micrometers to several tens of micrometers, depending on the coating.
  • the coating material on the cut surface is insulated to ensure the withstand voltage, and the pressure resistance of this cut surface is not too high.
  • the object of the present invention is to overcome the deficiencies of the prior art and provide an electrode structure of a laminated metallized film capacitor.
  • the metallization between the different potentials of the capacitor core is increased.
  • the distance can improve the section pressure resistance of the laminated metallized film capacitor core.
  • an electrode structure of a laminated metallized film capacitor comprising at least two metallized films laminated together; adjacent upper and lower metallized films in the longitudinal direction That is, the vertical film edge is stacked in a staggered state with a predetermined wrong edge width; each of the metallized films respectively includes a conductive metal plating layer and an insulating dielectric layer, and the conductive metal plating film is coated on the insulating dielectric layer; Each of the metallized films is provided with at least one void strip which is not covered with a metal plating and has a width along the lateral direction, and the void strip constitutes a residual edge of the metallized film.
  • a plurality of curved gap strips which are not covered with metal plating and have a certain width are arranged along the cutting plane direction of the laminated metallized film capacitor core to connect adjacent metal plating units Partially spaced or completely separated;
  • the curved gap strip has a concave shape in the middle, the two sides of the recess form a shoulder shape with a misaligned distribution, and the opposite direction of the recess opening is convex; in the adjacent two curved gaps In the strip, the most convex end of one of the curved void strips enters at least the recess of the other curved void strip.
  • the notch shape of the curved gap strips of the adjacent upper and lower two metallized films may be in the same direction or different directions of the notch openings; that is, the notches may be oriented differently in the same direction.
  • the adjacent upper and lower metallized films, the metal plating of the upper metallized film is connected to the first electrode, and the metal plating of the lower metallized film is connected to the second electrode, and the first electrode is on the cut surface There is a predetermined distance between the second electrodes.
  • each curved gap strip is equal or unequal, and the width of each curved gap strip is greater than or equal to 0.1 mm; that is, the curved gap strip may be of equal width or unequal width, and the width is greater than or equal to 0.1mm.
  • the curved void strip is composed of a first curved void strip, a second curved void strip, a third curved void strip, and a fourth curved void strip that are integrally connected in series.
  • the curved gap strip is disposed along a cross-sectional direction of the laminated metallized film capacitor core, the cut surface direction and the longitudinal direction are at a predetermined angle, the cut surface direction is consistent with the longitudinal direction, and the preset angle is zero degrees; the cut surface and the The first curved void strip, the second curved void strip, the third curved void strip, and the fourth curved void are formed after the curved gap strip is reversely twisted by the predetermined angle, and the tangent direction is consistent with the longitudinal direction.
  • the article satisfies the following conditions:
  • the fourth curved type gap strip is a curved section between a preset position in the curved gap strip to the trailing edge of the metallized film, and the second curved type gap strip is a curved type gap strip after the fourth curved type gap strip is removed.
  • the curve segment between the endpoint at the far left of the segment and the endpoint at the far right.
  • the invention has the beneficial effects that a plurality of curved gaps which are not covered with metal plating and have a certain width are provided on the surface of the laminated metallized film capacitor core on each metallized film.
  • a strip for partially or completely separating adjacent metal plating units; the curved gap strip has a concave shape in the middle, and the two sides of the recess form a shoulder shape which is misaligned; in the adjacent two curved gaps
  • the most convex end of one of the curved void strips enters at least the recess of the other curved void strip.
  • the structure increases the insulation distance between the metallized electrodes of different potentials on the cut surface of the capacitor core, and can improve the cut surface pressure resistance of the laminated metallized film capacitor core.
  • FIG. 1 is a schematic view showing a state in which two upper and lower metallized films of the present invention are separated according to the first embodiment
  • Figure 2 is a front elevational view showing the laminated state of the upper and lower two metallized films of the first embodiment of the present invention
  • Figure 3 is a left side cutaway view showing the stacked state of the upper and lower two metallized films of the first embodiment of the present invention
  • Figure 4 is a right side sectional view showing the stacked state of the upper and lower two metallized films of the first embodiment of the present invention
  • Figure 5 is a schematic view of the first metallized film of the present invention.
  • Figure 6 is a schematic view showing the configuration of a curved type void strip of the present invention.
  • Figure 7 is a schematic view showing the following one metallized film of the present invention.
  • Figure 8 is a schematic view of a metallized film of the present invention (the cut surface and the longitudinal direction are at a predetermined angle);
  • Figure 9 is a schematic view showing a metallized film of the present invention.
  • Figure 10 is a schematic view showing the state in which the upper and lower two metallized films of the present invention are separated according to the third embodiment
  • Figure 11 is a cross-sectional view showing a state in which two upper and lower metallized films of the present invention are laminated in the third embodiment.
  • an electrode structure of a laminated metallized film capacitor of the present invention includes at least two metallized films laminated together; adjacent upper and lower metallized films Laminated in a longitudinal direction in a staggered state having a predetermined wrong side width, the film widths of the upper and lower metallized films are equal, and the upper metallized film 1 and the lower metallized film 2 are laminated to have a wrong width.
  • Each of the metallized films comprises a conductive metal plating layer and an insulating dielectric layer, and the conductive metal plating film is coated on the insulating dielectric layer.
  • the upper metallized film 1 comprises a conductive metal plating layer 10 and an insulating dielectric layer 100.
  • the conductive metal plating layer 10 is coated on the insulating dielectric layer 100.
  • the lower metallized film 2 includes a conductive metal plating layer 20 and an insulating dielectric layer 200.
  • the conductive metal plating layer 20 is coated on the insulating dielectric layer 200.
  • the strip metallized film is provided with at least one gap strip which is not covered with a metal plating layer and has a certain width along the lateral direction, and the gap strip constitutes a margin of the metallized film, and the upper metallization is thin.
  • 1 has a left side 101, the sheet 2 is provided with metallization film 201 left side;
  • a plurality of curved gap strips which are not covered with metal plating and have a certain width are disposed along the longitudinal direction to partially or completely separate adjacent metal plating units, and the upper metal is separated.
  • the film 1 is further provided with a plurality of curved void strips 15 which are not covered with a metal plating and have a certain width along the longitudinal direction to partially or completely separate adjacent metal plating units, and a plurality of curved patterns.
  • the gap strip 15 forms a grid curve on the metallized film 1.
  • the lower metallized film 2 is further provided with a plurality of curved gap strips 25 which are not covered with a metal plating and have a certain width along the longitudinal direction to be adjacent.
  • the metal plating units are partially spaced or completely separated, and a plurality of curved void strips 25 form a grid curve on the metallized film 2;
  • the above-mentioned sheet metallized film 1 is taken as an example.
  • the center-side gap of the curved-shaped gap strip 15 is bent into a shape of a notch 151, and the notch opening faces the right side, and the two sides of the notch 151 are dislocated.
  • the width of the curved void strip is greater than or equal to 0.1 mm; the width of each curved void strip may be equal or unequal. In this embodiment, the width of each curved void strip is equal.
  • the curved void strip 15 is composed of a first curved void strip L1, a second curved void strip L2, a third curved void strip L3, and a fourth curved void strip L4 which are integrally connected in series.
  • the fourth curved type gap strip L4 is a curved section between a preset position E of the curved gap strip to the left edge of the metallized film
  • the second curved type gap strip L2 is after the fourth curved type gap strip is removed a curved section between the end point at the leftmost side of the curved gap section and the end point of the rightmost side, that is, the second curved type gap strip L2 is the end point A to the curved type at the rightmost side of the curved gap strip a curved section between the end points B at the leftmost side of the gap strip;
  • the upper metallized film 1 is formed with the notch opening facing the right side. Therefore, the first curved type gap strip L1 is one end of the curved gap segment after the fourth curved type gap strip is removed to the curved type. a curved section between the end points A at the far right side of the gap section, and the third curved type gap strip L3 is the end point B at the leftmost side of the curved gap section after the fourth curved type gap strip is removed to the curve A curved section between preset positions in a type of gap strip.
  • the film width of the upper metallized film 1 is set to b1, and the distance from the preset position on the upper metallized film 1 to the edge of the film on the remaining side is set to B11, the width of the upper metallized film 1 with respect to the lower metallized film 2 is b12; the film width of the lower metallized film 2 is set to b2, and the preset position on the lower metallized film 2 is The distance between the edges of the film on the left side is set to b21.
  • the width of the lower metallized film 2 relative to the upper metallized film 1 is b22; the following formula should be satisfied between them:
  • the film widths of the adjacent upper and lower metallized films are the same, the width of the wrong side is also equal, and the distance from the preset position to the edge of the film on the left side is also the same:
  • One end of the first curved void strip L1 is connected to the second curved void strip L2, and the other end of the first curved void strip L1 is provided with an end edge of the metallized film or an end of the metallized film.
  • a preset distance In this embodiment, the other end of the first curved type gap strip L1 and the edge of the metallized film are provided with a preset distance b13.
  • another design may be adopted, that is, the first curved type gap strip L1.
  • the other end of the metal film is opened to the end, which is equivalent to b13 ⁇ 0.
  • the length of the first curved type void strip L1 may be designed to be greater than or equal to 0 mm.
  • the end point on the left side of the preset position on the fourth curved type gap strip L4 is set to C, and the end point on the right side of the L4 preset position on the fourth curved type gap strip is D.
  • the rightmost curved strip has the end point B2 at the leftmost side of the curved void strip after the fourth curved void strip is removed.
  • the left side of the end point D1 at the right side of the preset position on the fourth curved type gap strip of the gap strip of course, the right side of the curved type gap strip after the fourth curved type gap strip is removed.
  • the end point B2 at the position is flush with the end point D1 on the right side of the preset position on the fourth curved type gap strip of the left curved type gap strip, and is equivalent to being set to b14 ⁇ 0.
  • the rightmost point C3 of the metal plating between the adjacent left and right curved lines is stripped of the fourth curved gap in the left curved gap strip.
  • the left side of the rightmost end point A2 of the curved gap section after the strip may be the rightmost point C3 of the metal plating between the adjacent left and right curved lines, and the left curved type gap strip.
  • the rightmost end point A2 of the curved gap section after the fourth curved type gap strip is flush; the equivalent is set to b15 ⁇ 0.
  • One end of the fourth curved type gap strip L4 is connected to the third curved type gap strip L3, and the other end of the fourth curved type gap strip L4 is connected to the left side 101 of the metallized film.
  • the fourth curved type gap strip L4 is a straight line segment of the vertical film edge.
  • b16 is the width of the curve
  • b17 is the distance between the grid curves.
  • b17 can be unequal spacing, but adjacent curves should satisfy b14 ⁇ 0 and b15 ⁇ 0.
  • Adjacent upper and lower metallized films Adjacent upper and lower metallized films, the metal plating of the upper metallized film 1 is connected to the first electrode, and the metal plating of the lower metallized film 2 is connected to the second electrode.
  • the metal plating layer 1.1, the metal plating layer 1.2, and the metal plating layer 1.3 are connected to the first electrode, and the metal plating layer 1.4 is not connected to the first electrode.
  • the metal plating layer 2.1, the metal plating layer 2.2, and the metal plating layer 2.3 are connected to the second electrode, and the metal plating layer 2.4 is not connected to the second electrode.
  • the metal plating layer 1.5 is connected to the first electrode, and the metal plating layer 1.6, the metal plating layer 1.7, and the metal plating layer 1.8 are not connected to the first electrode.
  • the metal plating layer 2.5 is connected to the second electrode, and the metal plating layer 2.6, the metal plating layer 2.7, and the metal plating layer 2.8 are not connected to the second electrode.
  • At least the metal plating (1.4, 1.8, 2.4, 2.8) near the left side is not connected to the electrode.
  • the shortest insulation distance b31, b32 between the first electrode and the second electrode On the tangential surface, the shortest insulation distance b31, b32 between the first electrode and the second electrode.
  • the preset position E is the same.
  • the shortest insulation distance b31, b32 of the first electrode and the second electrode, according to the design, b31, b32 is much larger than the thickness of the medium between the electrodes, and the withstand voltage is proportional to the insulation distance, thereby increasing the laminated metallized film capacitance.
  • the cut surface of the core is pressure resistant.
  • the underlying metallized film 2 as shown in FIG. 7, is conventionally used.
  • the margin is viewed on the bottom side, and therefore, the notched shape of the metallized film 2 is obtained.
  • the notch opening faces the left side; b24 in FIG. 7 is the same as b14 in FIG. 5, and b25 in FIG. 7 is the same as b15 in FIG.
  • the cross-sectional direction of the laminated metallized film capacitor core is consistent with the longitudinal direction, that is, the preset angle is zero degrees, and the curved gap strip is disposed in the longitudinal direction.
  • the curved gap strips can also be set at a predetermined angle along the longitudinal direction of the offset.
  • the direction of the cut surface of the laminated metallized film capacitor core is at an angle to the longitudinal direction, so that all the curved gap strips Both form an angle with the longitudinal direction (as shown in FIG. 8).
  • the curved gap strip 55 of the metallized film 1 is reversely twisted to the same angle as in FIG. 5, and is arranged in the longitudinal direction when the curved gap strip is arranged.
  • Embodiment 2 Referring to FIG. 9, the electrode structure of a laminated metallized film capacitor of the present invention is different from that of Embodiment 1 in that other electrode structures 61 are added between the grid curves to improve the product. Performance.
  • the electrode structure of a laminated metallized film capacitor of the present invention can also be improved by using the same electrode structure for a plurality of stacked metallized film capacitors.
  • the cut surface pressure resistance of the laminated metallized film capacitor core is not limited to FIG. 10 to FIG. 11
  • the upper metallized film 3 includes a conductive metal plating layer 30 and an insulating dielectric layer 300.
  • the conductive metal plating layer 30 is coated on the insulating dielectric layer 300
  • the underlying metallized film 4 includes a conductive metal plating layer 40.
  • an insulating dielectric layer 400, the conductive metal plating layer 40 is coated on the insulating dielectric layer 400;
  • the upper metallized film 3 is provided with the longitudinal gap strip 31 in the middle, and each of the two sides is provided with a plurality of strips as described in the first embodiment.
  • the lower strip metallized film 4 has longitudinal gap strips 41 disposed on both sides, and a plurality of curved gap strips connected by two curved gap strips 42 as described in the first embodiment. .
  • the structure of the invention increases the insulation distance between the metallized electrodes of different potentials on the cut surface of the capacitor core, and can improve the cut surface pressure resistance of the laminated metallized film capacitor core.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

An electrode structure for a laminated metallized thin film capacitor, including at least two metallized thin films (1) laminated together, several curve gap strips (15) not covered with a metal coating and having a certain width also being provided in the direction of the laminated metallized thin film capacitor core slice on each metallized thin film (1), so as to locally or completely space apart adjacent metal coating units; the middle portion of the curve gap strip (15) being in the shape of a recess, two sides of a recess (151) forming an alternately distributed shoulder shape; in two adjacent curve gap strips (15), the endpoint at the most raised area of one curve gap strip (15) at least entering into the recess (151) of another curve gap strip (15). The structure enlarges the insulation distance between metallized electrodes with difference potential on the capacitor core slice, and can improve the slice pressure tolerance of the laminated metallized thin film capacitor core.

Description

一种叠片式金属化薄膜电容器的电极结构  Electrode structure of laminated chip metallized film capacitor 技术领域  Technical field
本发明涉及电子元件,特别是涉及一种叠片式金属化薄膜电容器的电极结构。  This invention relates to electronic components, and more particularly to an electrode structure for a laminated metallized film capacitor.
背景技术Background technique
薄膜电容器是电容器中的一种,它是一种性能优越的电容器,其具有如下主要特性:无极性,绝缘阻抗很高,频率特性优异(频率响应宽广),而且介质损失很小。由于薄膜电容器体积小容量大,因此,有着较为广泛的用途,可以形成不同的系列产品,如高比能储能电容器、抗电磁干扰电容器、抗辐射电容器、安全膜电容器、长寿命电容器、高可靠电容器、高压全膜电容器等。A film capacitor is one of the capacitors. It is a capacitor with superior performance. It has the following main characteristics: no polarity, high insulation resistance, excellent frequency characteristics (wide frequency response), and low dielectric loss. Due to its small size and large capacity, film capacitors have a wide range of applications and can form different series of products, such as high specific energy storage capacitors, anti-electromagnetic interference capacitors, radiation-resistant capacitors, safety film capacitors, long-life capacitors, and high reliability. Capacitors, high voltage full film capacitors, etc.
薄膜电容器的一种结构形式,是采用金属化薄膜来制作,金属化薄膜是由塑料薄膜上真空蒸镀上一层很薄的金属构成,该层金属被用来作为电极。One form of structure of a film capacitor is made of a metallized film which is formed by vacuum evaporation of a thin layer of metal on a plastic film which is used as an electrode.
现有技术中,两张以上金属化膜和(或)若干光膜用卷绕设备卷成一电容芯子母卷,经喷金等加工工序后,再用切刀切成一个个叠片式电容器芯子,最后用叠片式电容器芯子做成电容器。这种叠片式金属化薄膜电容器有个缺陷,电容芯子的切面位置,不同电位的金属化电极间绝缘距离仅为电极间介质的厚度,厚度为几微米到几十微米,依赖涂敷在切面上的涂敷材料来绝缘保证耐压,这个切面承受的耐压不会太高。In the prior art, two or more metallized films and/or a plurality of light films are wound into a capacitor core mother roll by a winding device, and after being processed by a gold injection process, the chips are cut into individual laminated capacitors by a cutter. The core is finally made up of a capacitor using a laminated capacitor core. This laminated metallized film capacitor has a defect. The position of the cut surface of the capacitor core, the insulation distance between the metal electrodes of different potentials is only the thickness of the medium between the electrodes, and the thickness is several micrometers to several tens of micrometers, depending on the coating. The coating material on the cut surface is insulated to ensure the withstand voltage, and the pressure resistance of this cut surface is not too high.
发明内容Summary of the invention
本发明的目的在于克服现有技术之不足,提供一种叠片式金属化薄膜电容器的电极结构,通过对电极结构的特殊设计,加大了电容芯子切面上不同电位的金属化电极间绝缘距离,能够提高叠片式金属化薄膜电容芯子的切面耐压。The object of the present invention is to overcome the deficiencies of the prior art and provide an electrode structure of a laminated metallized film capacitor. By special design of the electrode structure, the metallization between the different potentials of the capacitor core is increased. The distance can improve the section pressure resistance of the laminated metallized film capacitor core.
本发明解决其技术问题所采用的技术方案是:一种叠片式金属化薄膜电容器的电极结构,包括至少两张层叠在一起的金属化薄膜;相邻的上下两张金属化薄膜在纵方向即垂直薄膜边缘方向上层叠成具有预设错边宽度的错边状态;每张金属化薄膜分别包括导电的金属镀层和绝缘的介质层,且导电的金属镀层镀膜在绝缘的介质层上;在每张金属化薄膜上沿着横向至少设有一条未覆盖有金属镀层的且具有一定宽度的空隙条,该空隙条构成该金属化薄膜的留边。The technical solution adopted by the present invention to solve the technical problem thereof is: an electrode structure of a laminated metallized film capacitor, comprising at least two metallized films laminated together; adjacent upper and lower metallized films in the longitudinal direction That is, the vertical film edge is stacked in a staggered state with a predetermined wrong edge width; each of the metallized films respectively includes a conductive metal plating layer and an insulating dielectric layer, and the conductive metal plating film is coated on the insulating dielectric layer; Each of the metallized films is provided with at least one void strip which is not covered with a metal plating and has a width along the lateral direction, and the void strip constitutes a residual edge of the metallized film.
在每张金属化薄膜上沿着叠片式金属化薄膜电容芯子的切面方向还设有若干条未覆盖有金属镀层的并具有一定宽度的曲线型空隙条,以将相邻的金属镀层单元局部隔开或完全隔开;该曲线型空隙条的中间呈凹口形状,凹口的两边构成错位分布的肩形,凹口开口的反方向形成凸出;在相邻的两条曲线型空隙条中,其中一曲线型空隙条的最凸处的端点至少进入另一曲线型空隙条的凹口中。On each metallized film, a plurality of curved gap strips which are not covered with metal plating and have a certain width are arranged along the cutting plane direction of the laminated metallized film capacitor core to connect adjacent metal plating units Partially spaced or completely separated; the curved gap strip has a concave shape in the middle, the two sides of the recess form a shoulder shape with a misaligned distribution, and the opposite direction of the recess opening is convex; in the adjacent two curved gaps In the strip, the most convex end of one of the curved void strips enters at least the recess of the other curved void strip.
所述的相邻的上下两张金属化薄膜的曲线型空隙条的凹口形状,其凹口开口的朝向为同向或不同向;即,其凹口朝向可以同向也可以不同向。The notch shape of the curved gap strips of the adjacent upper and lower two metallized films may be in the same direction or different directions of the notch openings; that is, the notches may be oriented differently in the same direction.
所述的相邻的上下两张金属化薄膜,上面一张金属化薄膜的金属镀层接至第一电极,下面一张金属化薄膜的金属镀层接至第二电极,在切面上第一电极与第二电极之间存在一个预设的距离。The adjacent upper and lower metallized films, the metal plating of the upper metallized film is connected to the first electrode, and the metal plating of the lower metallized film is connected to the second electrode, and the first electrode is on the cut surface There is a predetermined distance between the second electrodes.
各曲线型空隙条的宽度为相等或不相等,每条曲线型空隙条的宽度大于或等于0.1mm;即曲线型空隙条可以是等宽度也可以是不等宽度,同时,宽度要大于或等于0.1mm。The width of each curved gap strip is equal or unequal, and the width of each curved gap strip is greater than or equal to 0.1 mm; that is, the curved gap strip may be of equal width or unequal width, and the width is greater than or equal to 0.1mm.
所述的曲线型空隙条由依次一体相连接的第一曲线型空隙条、第二曲线型空隙条、第三曲线型空隙条和第四曲线型空隙条构成。The curved void strip is composed of a first curved void strip, a second curved void strip, a third curved void strip, and a fourth curved void strip that are integrally connected in series.
所述曲线型空隙条沿着叠片式金属化薄膜电容芯子的切面方向设置,切面方向与纵向成一个预设的角度,切面方向与纵向一致,预设的角度为零度;切面及所述曲线型空隙条在反扭曲该预设的角度后,切面方向与纵向一致情况下,所述第一曲线型空隙条、第二曲线型空隙条、第三曲线型空隙条和第四曲线型空隙条满足下列条件:The curved gap strip is disposed along a cross-sectional direction of the laminated metallized film capacitor core, the cut surface direction and the longitudinal direction are at a predetermined angle, the cut surface direction is consistent with the longitudinal direction, and the preset angle is zero degrees; the cut surface and the The first curved void strip, the second curved void strip, the third curved void strip, and the fourth curved void are formed after the curved gap strip is reversely twisted by the predetermined angle, and the tangent direction is consistent with the longitudinal direction. The article satisfies the following conditions:
第四曲线型空隙条为曲线型空隙条中的一个预置位置至金属化薄膜的留边之间的曲线段,第二曲线型空隙条为剔除第四曲线型空隙条后的曲线型空隙条段的最左侧处的端点至最右侧处的端点之间的曲线段。The fourth curved type gap strip is a curved section between a preset position in the curved gap strip to the trailing edge of the metallized film, and the second curved type gap strip is a curved type gap strip after the fourth curved type gap strip is removed The curve segment between the endpoint at the far left of the segment and the endpoint at the far right.
本发明的有益效果是,由于采用了在每张金属化薄膜上沿着叠片式金属化薄膜电容芯子的切面方向还设有若干条未覆盖有金属镀层的并具有一定宽度的曲线型空隙条,以将相邻的金属镀层单元局部隔开或完全隔开;该曲线型空隙条的中间呈凹口形状,凹口的两边构成错位分布的肩形;在相邻的两条曲线型空隙条中,其中一曲线型空隙条的最凸处的端点至少进入另一曲线型空隙条的凹口中。该结构加大了电容芯子切面上不同电位的金属化电极间绝缘距离,能够提高叠片式金属化薄膜电容芯子的切面耐压。The invention has the beneficial effects that a plurality of curved gaps which are not covered with metal plating and have a certain width are provided on the surface of the laminated metallized film capacitor core on each metallized film. a strip for partially or completely separating adjacent metal plating units; the curved gap strip has a concave shape in the middle, and the two sides of the recess form a shoulder shape which is misaligned; in the adjacent two curved gaps In the strip, the most convex end of one of the curved void strips enters at least the recess of the other curved void strip. The structure increases the insulation distance between the metallized electrodes of different potentials on the cut surface of the capacitor core, and can improve the cut surface pressure resistance of the laminated metallized film capacitor core.
以下结合附图及实施例对本发明作进一步详细说明;但本发明的一种叠片式金属化薄膜电容器的电极结构不局限于实施例。The present invention will be further described in detail below with reference to the accompanying drawings and embodiments; however, the electrode structure of a laminated metallized film capacitor of the present invention is not limited to the embodiment.
附图说明DRAWINGS
图1是实施例一本发明的上下两张金属化薄膜分开状态的示意图;1 is a schematic view showing a state in which two upper and lower metallized films of the present invention are separated according to the first embodiment;
图2是实施例一本发明的上下两张金属化薄膜层叠状态的前视图;Figure 2 is a front elevational view showing the laminated state of the upper and lower two metallized films of the first embodiment of the present invention;
图3是实施例一本发明的上下两张金属化薄膜层叠状态的左侧切面图;Figure 3 is a left side cutaway view showing the stacked state of the upper and lower two metallized films of the first embodiment of the present invention;
图4是实施例一本发明的上下两张金属化薄膜层叠状态的右侧切面图;Figure 4 is a right side sectional view showing the stacked state of the upper and lower two metallized films of the first embodiment of the present invention;
图5是实施例一本发明的上面一张金属化薄膜的示意图;Figure 5 is a schematic view of the first metallized film of the present invention;
图6是实施例一本发明的曲线型空隙条的构造示意图;Figure 6 is a schematic view showing the configuration of a curved type void strip of the present invention;
图7是实施例一本发明的下面一张金属化薄膜的示意图;Figure 7 is a schematic view showing the following one metallized film of the present invention;
图8是本发明的一张金属化薄膜(切面与纵向成一个预设的角度)的示意图;Figure 8 is a schematic view of a metallized film of the present invention (the cut surface and the longitudinal direction are at a predetermined angle);
图9是实施例二本发明的一张金属化薄膜的示意图;Figure 9 is a schematic view showing a metallized film of the present invention;
图10是实施例三本发明的上下两张金属化薄膜分开状态的示意图;Figure 10 is a schematic view showing the state in which the upper and lower two metallized films of the present invention are separated according to the third embodiment;
图11是实施例三本发明的上下两张金属化薄膜层叠状态的切面图。Figure 11 is a cross-sectional view showing a state in which two upper and lower metallized films of the present invention are laminated in the third embodiment.
具体实施方式detailed description
实施例一,参见图1至图7所示,本发明的一种叠片式金属化薄膜电容器的电极结构,包括至少两张层叠在一起的金属化薄膜;相邻的上下两张金属化薄膜在纵方向上层叠成具有一个预设错边宽度的错边状态,上下两张金属化薄膜的膜宽相等,上张金属化薄膜1和下张金属化薄膜2层叠后设有一个错边宽度b12;每张金属化薄膜分别包括导电的金属镀层和绝缘的介质层,且导电的金属镀层镀膜在绝缘的介质层上,上张金属化薄膜1包括导电的金属镀层10和绝缘的介质层100,导电的金属镀层10镀膜在绝缘的介质层100上,下张金属化薄膜2包括导电的金属镀层20和绝缘的介质层200,导电的金属镀层20镀膜在绝缘的介质层200上;在每张金属化薄膜上沿着横向至少设有一条未覆盖有金属镀层的且具有一定宽度的空隙条,该空隙条构成该金属化薄膜的留边,上张金属化薄膜1设有留边101,下张金属化薄膜2设有留边201; Embodiment 1 Referring to FIG. 1 to FIG. 7, an electrode structure of a laminated metallized film capacitor of the present invention includes at least two metallized films laminated together; adjacent upper and lower metallized films Laminated in a longitudinal direction in a staggered state having a predetermined wrong side width, the film widths of the upper and lower metallized films are equal, and the upper metallized film 1 and the lower metallized film 2 are laminated to have a wrong width. Each of the metallized films comprises a conductive metal plating layer and an insulating dielectric layer, and the conductive metal plating film is coated on the insulating dielectric layer. The upper metallized film 1 comprises a conductive metal plating layer 10 and an insulating dielectric layer 100. The conductive metal plating layer 10 is coated on the insulating dielectric layer 100. The lower metallized film 2 includes a conductive metal plating layer 20 and an insulating dielectric layer 200. The conductive metal plating layer 20 is coated on the insulating dielectric layer 200. The strip metallized film is provided with at least one gap strip which is not covered with a metal plating layer and has a certain width along the lateral direction, and the gap strip constitutes a margin of the metallized film, and the upper metallization is thin. 1 has a left side 101, the sheet 2 is provided with metallization film 201 left side;
在每张金属化薄膜上沿着纵向还设有若干条未覆盖有金属镀层的并具有一定宽度的曲线型空隙条,以将相邻的金属镀层单元局部隔开或完全隔开,上张金属化薄膜1上沿着纵向还设有若干条未覆盖有金属镀层的并具有一定宽度的曲线型空隙条15,以将相邻的金属镀层单元局部隔开或完全隔开,若干条的曲线型空隙条15在金属化薄膜1上形成网格曲线,下张金属化薄膜2上沿着纵向还设有若干条未覆盖有金属镀层的并具有一定宽度的曲线型空隙条25,以将相邻的金属镀层单元局部隔开或完全隔开,若干条的曲线型空隙条25在金属化薄膜2上形成网格曲线;On each metallized film, a plurality of curved gap strips which are not covered with metal plating and have a certain width are disposed along the longitudinal direction to partially or completely separate adjacent metal plating units, and the upper metal is separated. The film 1 is further provided with a plurality of curved void strips 15 which are not covered with a metal plating and have a certain width along the longitudinal direction to partially or completely separate adjacent metal plating units, and a plurality of curved patterns. The gap strip 15 forms a grid curve on the metallized film 1. The lower metallized film 2 is further provided with a plurality of curved gap strips 25 which are not covered with a metal plating and have a certain width along the longitudinal direction to be adjacent. The metal plating units are partially spaced or completely separated, and a plurality of curved void strips 25 form a grid curve on the metallized film 2;
以上张金属化薄膜1为例,参见图5和图6;该曲线型空隙条15的中间偏向一边的位置弯成凹口151形状,且凹口开口朝向右侧,凹口151的两边构成错位分布的肩形;左右相邻的两条曲线型空隙条中,右边曲线型空隙条的最左侧处的端点B至少进入左边曲线型空隙条的凹口151中。The above-mentioned sheet metallized film 1 is taken as an example. Referring to FIG. 5 and FIG. 6 , the center-side gap of the curved-shaped gap strip 15 is bent into a shape of a notch 151, and the notch opening faces the right side, and the two sides of the notch 151 are dislocated. The shoulder shape of the distribution; of the two curved gap strips adjacent to each other, the end point B at the leftmost side of the right curved void strip enters at least the recess 151 of the left curved void strip.
所述的曲线型空隙条的宽度为大于或等于0.1mm;各曲线型空隙条的宽度可以为相等,也可以为不相等,本实施例中,各曲线型空隙条的宽度为相等。The width of the curved void strip is greater than or equal to 0.1 mm; the width of each curved void strip may be equal or unequal. In this embodiment, the width of each curved void strip is equal.
所述的曲线型空隙条15由依次一体相连接的第一曲线型空隙条L1、第二曲线型空隙条L2、第三曲线型空隙条L3和第四曲线型空隙条L4构成,The curved void strip 15 is composed of a first curved void strip L1, a second curved void strip L2, a third curved void strip L3, and a fourth curved void strip L4 which are integrally connected in series.
其中,第四曲线型空隙条L4为曲线型空隙条中的一个预置位置E至金属化薄膜的留边之间的曲线段,第二曲线型空隙条L2为剔除第四曲线型空隙条后的曲线型空隙条段的最左侧处的端点至最右侧处的端点之间的曲线段,即第二曲线型空隙条L2为曲线型空隙条的最右侧处的端点A至曲线型空隙条的最左侧处的端点B之间的曲线段;Wherein, the fourth curved type gap strip L4 is a curved section between a preset position E of the curved gap strip to the left edge of the metallized film, and the second curved type gap strip L2 is after the fourth curved type gap strip is removed a curved section between the end point at the leftmost side of the curved gap section and the end point of the rightmost side, that is, the second curved type gap strip L2 is the end point A to the curved type at the rightmost side of the curved gap strip a curved section between the end points B at the leftmost side of the gap strip;
本实施例上张金属化薄膜1采用的是凹口开口朝向右侧,因此,第一曲线型空隙条L1为剔除第四曲线型空隙条后的曲线型空隙条段的一端头至该曲线型空隙条段最右侧处的端点A之间的曲线段,第三曲线型空隙条L3为剔除第四曲线型空隙条后的曲线型空隙条段的最左侧处的端点B至所述曲线型空隙条中的预置位置之间的曲线段。In the present embodiment, the upper metallized film 1 is formed with the notch opening facing the right side. Therefore, the first curved type gap strip L1 is one end of the curved gap segment after the fourth curved type gap strip is removed to the curved type. a curved section between the end points A at the far right side of the gap section, and the third curved type gap strip L3 is the end point B at the leftmost side of the curved gap section after the fourth curved type gap strip is removed to the curve A curved section between preset positions in a type of gap strip.
在相邻的上下两张金属化薄膜中,设定上面一张金属化薄膜1的膜宽为b1,该上金属化薄膜1上的预置位置到其留边侧的薄膜边缘的距离设为b11,该上金属化薄膜1相对于下金属化薄膜2的错边宽度为b12;设定下面一张金属化薄膜2的膜宽为b2,该下金属化薄膜2上的预置位置到其留边侧的薄膜边缘的距离设为b21,该下金属化薄膜2相对于上金属化薄膜1的错边宽度为b22;则它们之间应满足下列公式:In the adjacent upper and lower metallized films, the film width of the upper metallized film 1 is set to b1, and the distance from the preset position on the upper metallized film 1 to the edge of the film on the remaining side is set to B11, the width of the upper metallized film 1 with respect to the lower metallized film 2 is b12; the film width of the lower metallized film 2 is set to b2, and the preset position on the lower metallized film 2 is The distance between the edges of the film on the left side is set to b21. The width of the lower metallized film 2 relative to the upper metallized film 1 is b22; the following formula should be satisfied between them:
b11+b12+b21>b1B11+b12+b21>b1
b21+b22+b11>b2B21+b22+b11>b2
由于本实施例中,所述的相邻的上下两张金属化薄膜的膜宽相一致,错边宽度也相等,且预置位置到留边侧的薄膜边缘的距离也相同,则有:In this embodiment, the film widths of the adjacent upper and lower metallized films are the same, the width of the wrong side is also equal, and the distance from the preset position to the edge of the film on the left side is also the same:
b1=b2,b12=b22,b11=b21;B1=b2, b12=b22, b11=b21;
b11>〔b1-b12〕/2;B11>[b1-b12]/2;
b21>〔b2-b22〕/2。B21>[b2-b22]/2.
所述第一曲线型空隙条L1的一端与第二曲线型空隙条L2相连接,第一曲线型空隙条L1的另一端通出金属化薄膜的端边或与金属化薄膜的端边设有一个预置的距离。本实施例中,第一曲线型空隙条L1的另一端与金属化薄膜的端边设有一个预置的距离b13,当然,也可以是另一种设计,即,第一曲线型空隙条L1的另一端通出金属化薄膜的端边,相当于设定为b13≥0。One end of the first curved void strip L1 is connected to the second curved void strip L2, and the other end of the first curved void strip L1 is provided with an end edge of the metallized film or an end of the metallized film. A preset distance. In this embodiment, the other end of the first curved type gap strip L1 and the edge of the metallized film are provided with a preset distance b13. Of course, another design may be adopted, that is, the first curved type gap strip L1. The other end of the metal film is opened to the end, which is equivalent to b13 ≥ 0.
第一曲线型空隙条L1的长度可以设计为大于或等于0mm。The length of the first curved type void strip L1 may be designed to be greater than or equal to 0 mm.
设定第四曲线型空隙条L4上预置位置左侧处的端点为C,第四曲线型空隙条上L4预置位置右侧处的端点为D。The end point on the left side of the preset position on the fourth curved type gap strip L4 is set to C, and the end point on the right side of the L4 preset position on the fourth curved type gap strip is D.
所述相邻的两条曲线型空隙条中,参见图5所示,右边曲线型空隙条剔除第四曲线型空隙条后的曲线型空隙条段的最左侧处的端点B2在左边曲线型空隙条的第四曲线型空隙条上预置位置的右侧处端点D1的左边,当然,也可以是右边曲线型空隙条剔除第四曲线型空隙条后的曲线型空隙条段的最左侧处的端点B2与左边曲线型空隙条的第四曲线型空隙条上预置位置的右侧处端点D1相平齐,相当于设定为b14≥0。In the two adjacent curved gap strips, as shown in FIG. 5, the rightmost curved strip has the end point B2 at the leftmost side of the curved void strip after the fourth curved void strip is removed. The left side of the end point D1 at the right side of the preset position on the fourth curved type gap strip of the gap strip, of course, the right side of the curved type gap strip after the fourth curved type gap strip is removed The end point B2 at the position is flush with the end point D1 on the right side of the preset position on the fourth curved type gap strip of the left curved type gap strip, and is equivalent to being set to b14 ≥ 0.
所述相邻的两条曲线型空隙条中,参见图5所示,相邻的左右两第四曲线型空隙条间金属镀层最右侧点C3在左边曲线型空隙条剔除第四曲线型空隙条后的曲线型空隙条段的最右侧的端点A2的左侧;当然,也可以是相邻的左右两第四曲线型空隙条间金属镀层最右侧点C3与左边曲线型空隙条剔除第四曲线型空隙条后的曲线型空隙条段的最右侧的端点A2相平齐;相当于设定为b15≥0。In the two adjacent curved gap strips, as shown in FIG. 5, the rightmost point C3 of the metal plating between the adjacent left and right curved lines is stripped of the fourth curved gap in the left curved gap strip. The left side of the rightmost end point A2 of the curved gap section after the strip; of course, it may be the rightmost point C3 of the metal plating between the adjacent left and right curved lines, and the left curved type gap strip The rightmost end point A2 of the curved gap section after the fourth curved type gap strip is flush; the equivalent is set to b15 ≥ 0.
所述第四曲线型空隙条L4的一端与第三曲线型空隙条L3相连接,第四曲线型空隙条L4的另一端接至金属化薄膜的留边101。本实施例中,第四曲线型空隙条L4为垂直薄膜边缘的直线段。One end of the fourth curved type gap strip L4 is connected to the third curved type gap strip L3, and the other end of the fourth curved type gap strip L4 is connected to the left side 101 of the metallized film. In this embodiment, the fourth curved type gap strip L4 is a straight line segment of the vertical film edge.
相邻网格曲线(即曲线型空隙条)间位置关系,b16为曲线的宽度,b17为网格曲线间的距离。b16 ≥0.1mm,b17可以为不等间距,但相邻曲线要满足b14 ≥ 0及b15 ≥ 0。The positional relationship between adjacent grid curves (ie, curved gap strips), b16 is the width of the curve, and b17 is the distance between the grid curves. B16 ≥0.1mm, b17 can be unequal spacing, but adjacent curves should satisfy b14 ≥ 0 and b15 ≥ 0.
相邻的上下两张金属化薄膜,将上面一张金属化薄膜1的金属镀层接至第一电极,将下面一张金属化薄膜2的金属镀层接至第二电极。Adjacent upper and lower metallized films, the metal plating of the upper metallized film 1 is connected to the first electrode, and the metal plating of the lower metallized film 2 is connected to the second electrode.
在左切面处,金属镀层1.1、金属镀层1.2、金属镀层1.3与第一电极相连,金属镀层1.4与第一电极不连接。金属镀层2.1、金属镀层2.2、金属镀层2.3与第二电极相连,金属镀层2.4与第二电极不连接。At the left side, the metal plating layer 1.1, the metal plating layer 1.2, and the metal plating layer 1.3 are connected to the first electrode, and the metal plating layer 1.4 is not connected to the first electrode. The metal plating layer 2.1, the metal plating layer 2.2, and the metal plating layer 2.3 are connected to the second electrode, and the metal plating layer 2.4 is not connected to the second electrode.
在右切面处,金属镀层1.5与第一电极相连,金属镀层1.6、金属镀层1.7、金属镀层1.8与第一电极不连接。金属镀层2.5与第二电极相连,金属镀层2.6、金属镀层2.7、金属镀层2.8与第二电极不连接。At the right cut surface, the metal plating layer 1.5 is connected to the first electrode, and the metal plating layer 1.6, the metal plating layer 1.7, and the metal plating layer 1.8 are not connected to the first electrode. The metal plating layer 2.5 is connected to the second electrode, and the metal plating layer 2.6, the metal plating layer 2.7, and the metal plating layer 2.8 are not connected to the second electrode.
在切面上,至少靠近留边的金属镀层(1.4,1.8,2.4,2.8)是不与电极相连的。b18≥b11,b19≥b11,b28≥b21,b29≥b21。On the cut surface, at least the metal plating (1.4, 1.8, 2.4, 2.8) near the left side is not connected to the electrode. B18 ≥ b11, b19 ≥ b11, b28 ≥ b21, b29 ≥ b21.
在切面上,第一电极与第二电极的最短绝缘距离b31,b32。On the tangential surface, the shortest insulation distance b31, b32 between the first electrode and the second electrode.
上下两张金属化薄膜一样,预置位置E一样。b1=b2,b12=b22,b11=b21。Like the upper and lower two metallized films, the preset position E is the same. B1=b2, b12=b22, b11=b21.
b31=b18+b28+b12-b1B31=b18+b28+b12-b1
b32=b19+b29+b12-b1B32=b19+b29+b12-b1
由b1=b2,b12=b22,b11=b21,b18≥b11,b19≥b11,b28≥b21,b29≥b21,得:From b1=b2, b12=b22, b11=b21, b18≥b11, b19≥b11, b28≥b21, b29≥b21, get:
b31≥2b11+b12-b1B31≥2b11+b12-b1
b32≥2b11+b12-b1B32 ≥ 2b11 + b12-b1
在预置位置E时,b11>(b1-b12)/2At preset position E, b11>(b1-b12)/2
所以:b31>0,b32>0So: b31>0, b32>0
在切面上,第一电极与第二电极的最短绝缘距离b31、b32,根据设计,b31、b32远大于电极间介质的厚度,耐压与绝缘距离成正比,从而提高叠片式金属化薄膜电容芯子的切面耐压。On the tangential surface, the shortest insulation distance b31, b32 of the first electrode and the second electrode, according to the design, b31, b32 is much larger than the thickness of the medium between the electrodes, and the withstand voltage is proportional to the insulation distance, thereby increasing the laminated metallized film capacitance. The cut surface of the core is pressure resistant.
本实施例下张金属化薄膜2,参见图7所示,按照行业的惯例,对于单张的金属化薄膜,是以留边在底侧来看,因此,该金属化薄膜2的凹口形状的凹口开口朝向左侧;图7中的b24与图5中的b14的条件相同,图7中的b25与图5中的b15的条件相同。In the present embodiment, the underlying metallized film 2, as shown in FIG. 7, is conventionally used. For a single metallized film, the margin is viewed on the bottom side, and therefore, the notched shape of the metallized film 2 is obtained. The notch opening faces the left side; b24 in FIG. 7 is the same as b14 in FIG. 5, and b25 in FIG. 7 is the same as b15 in FIG.
本实施例中,叠片式金属化薄膜电容芯子的切面方向与纵向一致,也就是预设的角度为零度,曲线型空隙条是沿纵向设置。当然,曲线型空隙条也可以沿着偏移纵向一个预设的角度来设置,此时,叠片式金属化薄膜电容芯子的切面方向与纵向有一个角度,这样,所有的曲线型空隙条都与纵向形成一个角度(如图8所示),图8中,金属化薄膜1的曲线型空隙条55在反扭曲该角度后则与图5一样,是符合曲线型空隙条沿纵向设置时的条件,这种结构在偏移纵向该角度的切面上,第一电极与第二电极之间同样会存在一个预设的距离;b5为金属化薄膜1的膜宽,该金属化薄膜5上的预置位置E到其留边501侧的薄膜边缘的距离设为b51。In this embodiment, the cross-sectional direction of the laminated metallized film capacitor core is consistent with the longitudinal direction, that is, the preset angle is zero degrees, and the curved gap strip is disposed in the longitudinal direction. Of course, the curved gap strips can also be set at a predetermined angle along the longitudinal direction of the offset. At this time, the direction of the cut surface of the laminated metallized film capacitor core is at an angle to the longitudinal direction, so that all the curved gap strips Both form an angle with the longitudinal direction (as shown in FIG. 8). In FIG. 8, the curved gap strip 55 of the metallized film 1 is reversely twisted to the same angle as in FIG. 5, and is arranged in the longitudinal direction when the curved gap strip is arranged. The condition that the structure is offset from the longitudinal direction of the angle, there is also a predetermined distance between the first electrode and the second electrode; b5 is the film width of the metallized film 1, and the metallized film 5 is The distance from the preset position E to the edge of the film on the side of the remaining side 501 is set to b51.
实施例二,参见图9所示,本发明的一种叠片式金属化薄膜电容器的电极结构,与实施例一的不同之处在于,在网格曲线间增加其它电极结构61,以改善产品的性能。 Embodiment 2 Referring to FIG. 9, the electrode structure of a laminated metallized film capacitor of the present invention is different from that of Embodiment 1 in that other electrode structures 61 are added between the grid curves to improve the product. Performance.
实施例三,参见图10至图11所示,本发明的一种叠片式金属化薄膜电容器的电极结构,对于多串叠片式金属化薄膜电容,也可采用同样的电极结构,来提高叠片式金属化薄膜电容芯子的切面耐压。 Embodiment 3, referring to FIG. 10 to FIG. 11, the electrode structure of a laminated metallized film capacitor of the present invention can also be improved by using the same electrode structure for a plurality of stacked metallized film capacitors. The cut surface pressure resistance of the laminated metallized film capacitor core.
该实施例中,上张金属化薄膜3包括导电的金属镀层30和绝缘的介质层300,导电的金属镀层30镀膜在绝缘的介质层300上,下张金属化薄膜4包括导电的金属镀层40和绝缘的介质层400,导电的金属镀层40镀膜在绝缘的介质层400上;上张金属化薄膜3是将纵向空隙条31设在中间,两边各设有若干条如实施例一所述的曲线型空隙条32;下张金属化薄膜4是将纵向空隙条41设在两边,中间则有若干条由两条如实施例一所述的曲线型空隙条42连接在一起的曲线型空隙条。In this embodiment, the upper metallized film 3 includes a conductive metal plating layer 30 and an insulating dielectric layer 300. The conductive metal plating layer 30 is coated on the insulating dielectric layer 300, and the underlying metallized film 4 includes a conductive metal plating layer 40. And an insulating dielectric layer 400, the conductive metal plating layer 40 is coated on the insulating dielectric layer 400; the upper metallized film 3 is provided with the longitudinal gap strip 31 in the middle, and each of the two sides is provided with a plurality of strips as described in the first embodiment. Curved void strips 32; the lower strip metallized film 4 has longitudinal gap strips 41 disposed on both sides, and a plurality of curved gap strips connected by two curved gap strips 42 as described in the first embodiment. .
工业实用性Industrial applicability
本发明的结构加大了电容芯子切面上不同电位的金属化电极间绝缘距离,能够提高叠片式金属化薄膜电容芯子的切面耐压。The structure of the invention increases the insulation distance between the metallized electrodes of different potentials on the cut surface of the capacitor core, and can improve the cut surface pressure resistance of the laminated metallized film capacitor core.
上述实施例仅用来进一步说明本发明的一种叠片式金属化薄膜电容器的电极结构,但本发明并不局限于实施例,凡是依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均落入本发明技术方案的保护范围内。The above embodiments are only used to further explain the electrode structure of a laminated metallized film capacitor of the present invention, but the present invention is not limited to the embodiment, and any simple modification of the above embodiment in accordance with the technical essence of the present invention is provided. Equivalent changes and modifications are all within the scope of protection of the technical solutions of the present invention.

Claims (10)

  1. 一种叠片式金属化薄膜电容器的电极结构,包括至少两张层叠在一起的金属化薄膜;相邻的上下两张金属化薄膜在纵方向上层叠成具有预设错边宽度的错边状态;每张金属化薄膜分别包括导电的金属镀层和绝缘的介质层,且导电的金属镀层镀膜在绝缘的介质层上;在每张金属化薄膜上沿着横向至少设有一条未覆盖有金属镀层的且具有一定宽度的空隙条,该空隙条构成该金属化薄膜的留边;其特征在于: An electrode structure of a laminated metallized film capacitor comprising at least two metallized films laminated together; adjacent upper and lower metallized films are stacked in a longitudinal direction to have a staggered state with a predetermined wrong width Each of the metallized films respectively comprises a conductive metal plating layer and an insulating dielectric layer, and the conductive metal plating layer is coated on the insulating dielectric layer; at least one uncoated metal plating layer is provided on each metallized film along the lateral direction. And a gap strip having a width, the void strip constituting a margin of the metallized film; characterized by:
    在每张金属化薄膜上沿着叠片式金属化薄膜电容芯子的切面方向还设有若干条未覆盖有金属镀层的并具有一定宽度的曲线型空隙条,以将相邻的金属镀层单元局部隔开或完全隔开;该曲线型空隙条的中间呈凹口形状,凹口的两边构成错位分布的肩形,凹口开口的反方向形成凸出;在相邻的两条曲线型空隙条中,其中一曲线型空隙条的最凸处的端点至少进入另一曲线型空隙条的凹口中。 On each metallized film, a plurality of curved gap strips which are not covered with metal plating and have a certain width are arranged along the cutting plane direction of the laminated metallized film capacitor core to connect adjacent metal plating units Partially spaced or completely separated; the curved gap strip has a concave shape in the middle, the two sides of the recess form a shoulder shape with a misaligned distribution, and the opposite direction of the recess opening is convex; in the adjacent two curved gaps In the strip, the most convex end of one of the curved void strips enters at least the recess of the other curved void strip.
  2. 根据权利要求1所述的叠片式金属化薄膜电容器的电极结构,其特征在于:所述的相邻的上下两张金属化薄膜的曲线型空隙条的凹口形状,其凹口开口的朝向为同向或不同向。The electrode structure of the laminated metallized film capacitor according to claim 1, wherein the shape of the notch of the curved gap strip of the adjacent upper and lower two metallized films, the orientation of the notch opening For the same direction or different directions.
  3. 根据权利要求1所述的叠片式金属化薄膜电容器的电极结构,其特征在于:所述的相邻的上下两张金属化薄膜,上面一张金属化薄膜的金属镀层接至第一电极,下面一张金属化薄膜的金属镀层接至第二电极,在切面上第一电极与第二电极之间存在一个预设的距离。The electrode structure of the laminated metallized film capacitor according to claim 1, wherein: the adjacent upper and lower metallized films, the metal plating of the upper metallized film is connected to the first electrode, A metallization of a metallized film is attached to the second electrode, and a predetermined distance exists between the first electrode and the second electrode on the tangential surface.
  4. 根据权利要求1所述的叠片式金属化薄膜电容器的电极结构,其特征在于:各曲线型空隙条的宽度为相等或不相等,每条曲线型空隙条的宽度大于或等于0.1mm。The electrode structure of a laminated metallized film capacitor according to claim 1, wherein the width of each of the curved void strips is equal or unequal, and the width of each curved void strip is greater than or equal to 0.1 mm.
  5. 根据权利要求1所述的叠片式金属化薄膜电容器的电极结构,其特征在于:所述的曲线型空隙条由依次一体相连接的第一曲线型空隙条、第二曲线型空隙条、第三曲线型空隙条和第四曲线型空隙条构成。The electrode structure of a laminated metallized film capacitor according to claim 1, wherein the curved gap strip is formed by a first curved gap strip, a second curved void strip, and a plurality The three-curve type void strip and the fourth curved type void strip are formed.
  6. 根据权利要求5所述的叠片式金属化薄膜电容器的电极结构,其特征在于:The electrode structure of a laminated metallized film capacitor according to claim 5, wherein:
    所述曲线型空隙条沿着叠片式金属化薄膜电容芯子的切面方向设置,切面方向与纵向成一个预设的角度,切面及所述曲线型空隙条在反扭曲该预设的角度后,切面方向与纵向一致情况下,所述第一曲线型空隙条、第二曲线型空隙条、第三曲线型空隙条和第四曲线型空隙条满足下列条件:The curved gap strip is disposed along a cross-sectional direction of the laminated metallized film capacitor core, and the cut surface direction is at a predetermined angle with the longitudinal direction, and the cut surface and the curved gap strip are reversely twisted by the preset angle When the cutting plane direction is consistent with the longitudinal direction, the first curved gap strip, the second curved void strip, the third curved void strip, and the fourth curved void strip satisfy the following conditions:
    第四曲线型空隙条为曲线型空隙条中的一个预置位置至金属化薄膜的留边之间的曲线段,第二曲线型空隙条为剔除第四曲线型空隙条后的曲线型空隙条段的最左侧处的端点至最右侧处的端点之间的曲线段;The fourth curved type gap strip is a curved section between a preset position in the curved gap strip to the trailing edge of the metallized film, and the second curved type gap strip is a curved type gap strip after the fourth curved type gap strip is removed a curved segment between the endpoint at the far left of the segment and the endpoint at the far right;
    在凹口开口朝向左侧,第一曲线型空隙条为剔除第四曲线型空隙条后的曲线型空隙条段的一端头至该曲线型空隙条段最左侧处的端点之间的曲线段,第三曲线型空隙条为剔除第四曲线型空隙条后的曲线型空隙条段的最右侧处的端点至所述曲线型空隙条中的预置位置之间的曲线段;With the notch opening facing the left side, the first curved type gap strip is a curved section between the end of the curved gap section after the fourth curved type gap strip is removed to the leftmost end of the curved gap section a third curved type gap strip is a curved line between an end point at a rightmost side of the curved gap strip segment after the fourth curved type gap strip is removed to a preset position in the curved type gap strip;
    在凹口开口朝向右侧,第一曲线型空隙条为剔除第四曲线型空隙条后的曲线型空隙条段的一端头至该曲线型空隙条段最右侧处的端点之间的曲线段,第三曲线型空隙条为剔除第四曲线型空隙条后的曲线型空隙条段的最左侧处的端点至所述曲线型空隙条中的预置位置之间的曲线段。With the notch opening facing the right side, the first curved type gap strip is a curved section between the end of the curved gap section after the fourth curved type gap strip is removed to the rightmost end of the curved type of void section The third curved type void strip is a curved section between the end point of the leftmost curved portion of the curved void strip after the fourth curved type void strip is removed to a preset position in the curved gap strip.
  7. 根据权利要求6所述的叠片式金属化薄膜电容器的电极结构,其特征在于:在相邻的上下两张金属化薄膜中,设定上面一张金属化薄膜的膜宽为b1,该上金属化薄膜上的预置位置到其留边侧的薄膜边缘的距离设为b11,该上金属化薄膜相对于下金属化薄膜的错边宽度为b12;设定下面一张金属化薄膜的膜宽为b2,该下金属化薄膜上的预置位置到其留边侧的薄膜边缘的距离设为b21,该下金属化薄膜相对于上金属化薄膜的错边宽度为b22;则它们之间应满足下列公式:The electrode structure of a laminated metallized film capacitor according to claim 6, wherein in the adjacent upper and lower metallized films, the film width of the upper metallized film is set to b1. The distance from the preset position on the metallized film to the edge of the film on the left side is set to b11, and the width of the upper metallized film relative to the lower metallized film is b12; the film of the next metallized film is set. The width is b2, the distance from the preset position on the lower metallized film to the edge of the film on the side of the remaining side is b21, and the width of the lower metallized film relative to the upper metallized film is b22; The following formula should be met:
    b11+b12+b21>b1B11+b12+b21>b1
    b21+b22+b11>b2B21+b22+b11>b2
    当所述的相邻的上下两张金属化薄膜的膜宽相一致,错边宽度也相等,且预置位置到留边侧的薄膜边缘的距离也相同时,则有:When the film widths of the adjacent upper and lower metallized films are the same, the widths of the wrong sides are also equal, and when the distance from the preset position to the edge of the film on the left side is also the same, then:
    b1=b2,b12=b22,b11=b21;B1=b2, b12=b22, b11=b21;
    b11>〔b1-b12〕/2;B11>[b1-b12]/2;
    b21>〔b2-b22〕/2。B21>[b2-b22]/2.
  8. 根据权利要求6所述的叠片式金属化薄膜电容器的电极结构,其特征在于:所述第一曲线型空隙条的一端与第二曲线型空隙条相连接,第一曲线型空隙条的另一端通出金属化薄膜的端边或与金属化薄膜的端边设有一个预置的距离;The electrode structure of a laminated metallized film capacitor according to claim 6, wherein one end of the first curved void strip is connected to the second curved void strip, and the first curved void strip is further One end of the metallized film is provided with an end edge or a predetermined distance from the end of the metallized film;
    该预置的距离大于或等于0mm;The preset distance is greater than or equal to 0 mm;
    第一曲线型空隙条的长度大于或等于0mm。The length of the first curved void strip is greater than or equal to 0 mm.
  9. 根据权利要求6所述的叠片式金属化薄膜电容器的电极结构,其特征在于:所述相邻的两条曲线型空隙条中;The electrode structure of a laminated metallized film capacitor according to claim 6, wherein: the two adjacent curved gap strips;
    无论凹口朝向,右边曲线型空隙条剔除第四曲线型空隙条后的曲线型空隙条段的最左侧处的端点与左边曲线型空隙条的第四曲线型空隙条上预置位置的右侧处端点相平齐,或者右边曲线型空隙条剔除第四曲线型空隙条后的曲线型空隙条段的最左侧处的端点在左边曲线型空隙条的第四曲线型空隙条上预置位置的右侧处端点的左边。Regardless of the notch orientation, the right curved type gap strip excludes the leftmost end point of the curved gap section after the fourth curved type gap strip and the right end position of the fourth curved type gap strip of the left curved type gap strip. The end point at the side is flush, or the left end of the curved gap strip after the fourth curved gap strip is removed from the leftmost edge of the curved gap strip is preset on the fourth curved gap strip of the left curved gap strip. The left side of the endpoint at the right side of the position.
    无论凹口朝向,左边曲线型空隙条剔除第四曲线型空隙条后的曲线型空隙条段的最右侧处的端点与右边曲线型空隙条的第四曲线型空隙条上预置位置的左侧处端点相平齐,或者左边曲线型空隙条剔除第四曲线型空隙条后的曲线型空隙条段的最右侧处的端点在右边曲线型空隙条的第四曲线型空隙条上预置位置的左侧处端点的右边。Regardless of the notch orientation, the left curved groove strip excludes the rightmost end point of the curved gap segment after the fourth curved gap strip and the left end of the fourth curved void strip of the right curved void strip. The end points at the sides are flush, or the leftmost end of the curved gap strip after the left curved gap strip is removed from the fourth curved gap strip is preset on the fourth curved gap strip of the curved outer gap strip. The right side of the endpoint at the left side of the position.
  10. 根据权利要求6所述的叠片式金属化薄膜电容器的电极结构,其特征在于:所述第四曲线型空隙条的一端与第三曲线型空隙条相连接,第四曲线型空隙条的另一端接至金属化薄膜的留边;The electrode structure of a laminated metallized film capacitor according to claim 6, wherein one end of the fourth curved void strip is connected to the third curved void strip, and the fourth curved void strip is further One end is connected to the left side of the metallized film;
    无论凹口朝向,相邻的左右两第四曲线型空隙条间金属镀层最右侧点与左边曲线型空隙条剔除第四曲线型空隙条后的曲线型空隙条段的最右侧的端点相平齐;或者相邻的左右两第四曲线型空隙条间金属镀层最右侧点在左边曲线型空隙条剔除第四曲线型空隙条后的曲线型空隙条段的最右侧的端点的左侧;Regardless of the notch orientation, the rightmost point of the curved gap section after the fourth curved gap strip is removed from the rightmost point of the adjacent left and right four curved stripe strips and the left curved stripe strip Flush; or the rightmost point of the metal plating between the adjacent left and right 4th curved gap strips is left at the rightmost end of the curved void strip after the left curved void strip is removed from the fourth curved void strip side;
    无论凹口朝向,相邻的左右两第四曲线型空隙条间金属镀层最左侧点与右边曲线型空隙条剔除第四曲线型空隙条后的曲线型空隙条段的最左侧的端点相平齐;或者相邻的左右两第四曲线型空隙条间金属镀层最左侧点在右边曲线型空隙条剔除第四曲线型空隙条后的曲线型空隙条段的最左侧的端点的右侧。Regardless of the notch orientation, the leftmost point of the curved gap section after the fourth curved type gap strip is removed from the leftmost point of the adjacent left and right second curved type interstitial strips and the left curved point of the left curved type gap strip Flush; or the leftmost point of the metal plating between the adjacent left and right 4th curved gap strips is on the right side of the leftmost end of the curved void strip after the fourth curved void strip is removed side.
PCT/CN2012/080132 2011-12-07 2012-08-15 Electrode structure for laminated metallized thin film capacitor WO2013082951A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE112012005147.5T DE112012005147B4 (en) 2011-12-07 2012-08-15 An electrode structure of a stacked metallized film capacitor
JP2014545065A JP5984097B2 (en) 2011-12-07 2012-08-15 Electrode structure of laminated metallized film capacitor
US14/362,684 US9281122B2 (en) 2011-12-07 2012-08-15 Electrode structure of a laminated metallization film capacitor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110408341.9 2011-12-07
CN201110408341.9A CN102543438B (en) 2011-12-07 2011-12-07 Electrode structure of laminated metallic film capacitor

Publications (1)

Publication Number Publication Date
WO2013082951A1 true WO2013082951A1 (en) 2013-06-13

Family

ID=46350090

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2012/080132 WO2013082951A1 (en) 2011-12-07 2012-08-15 Electrode structure for laminated metallized thin film capacitor

Country Status (5)

Country Link
US (1) US9281122B2 (en)
JP (1) JP5984097B2 (en)
CN (1) CN102543438B (en)
DE (1) DE112012005147B4 (en)
WO (1) WO2013082951A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019146707A1 (en) 2018-01-29 2019-08-01 京セラ株式会社 Film capacitor, connection-type capacitor, inverter, and electric vehicle
WO2020189312A1 (en) 2019-03-19 2020-09-24 京セラ株式会社 Laminated capacitor, linked capacitor, inverter, and electric vehicle

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102543438B (en) 2011-12-07 2014-04-16 厦门法拉电子股份有限公司 Electrode structure of laminated metallic film capacitor
WO2017104113A1 (en) * 2015-12-15 2017-06-22 パナソニックIpマネジメント株式会社 Metalized film and film capacitor
JP7115481B2 (en) * 2017-08-15 2022-08-09 王子ホールディングス株式会社 metallized film, metallized film roll, plate roll
CN107933969B (en) * 2017-10-31 2022-04-01 中国电子科技集团公司第五十五研究所 Addressing ignition circuit for MEMS micro-thruster array chip and preparation method
EP4030450A4 (en) 2019-09-13 2023-10-11 Kyocera Corporation Film capacitor element
JPWO2021085219A1 (en) 2019-10-30 2021-05-06

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201374252Y (en) * 2009-01-16 2009-12-30 厦门法拉电子股份有限公司 Novel stacked wound film capacitor
CN201449904U (en) * 2009-06-09 2010-05-05 佛山市顺德区丰明电子科技有限公司 Safety type metallized film capacitor
WO2011073401A1 (en) * 2009-12-18 2011-06-23 Helmut Birkelbach Film capacitor
CN102543438A (en) * 2011-12-07 2012-07-04 厦门法拉电子股份有限公司 Electrode structure of laminated metallic film capacitor

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4890192A (en) * 1987-04-09 1989-12-26 Microelectronics And Computer Technology Corporation Thin film capacitor
JP3027869B2 (en) * 1991-05-08 2000-04-04 松下電器産業株式会社 Manufacturing method of multilayer film capacitor
JPH06267786A (en) * 1993-03-16 1994-09-22 Shizuki Denki Seisakusho:Kk Capacitor
JP3195265B2 (en) * 1997-01-18 2001-08-06 東京応化工業株式会社 Coating solution for forming Bi-based ferroelectric thin film, ferroelectric thin film formed using the same, and ferroelectric memory
JPH1145819A (en) 1997-07-28 1999-02-16 Nichicon Corp Metallized film capacitor
US6631068B1 (en) * 2002-09-17 2003-10-07 Parallax Power Components Llc Segmented metallized film
JP2005072427A (en) * 2003-08-27 2005-03-17 Shizuki Electric Co Inc Metallized film capacitor
JP2005085870A (en) * 2003-09-05 2005-03-31 Matsushita Electric Ind Co Ltd Metallized film capacitor
JP2007053222A (en) * 2005-08-18 2007-03-01 Matsushita Electric Ind Co Ltd Metallized film capacitor
JP2007103534A (en) * 2005-09-30 2007-04-19 Nippon Chemicon Corp Metallization film capacitor
CN2916877Y (en) * 2006-02-21 2007-06-27 高鹏 Metallized safety film explosion-proof capacitor
JP5493328B2 (en) * 2008-10-09 2014-05-14 株式会社村田製作所 Manufacturing method of multilayer electronic component
CN201549382U (en) * 2009-09-30 2010-08-11 长兴华强电子有限公司 Capacitor for energy-saving lamp ballast
JP5562169B2 (en) * 2010-08-09 2014-07-30 小島プレス工業株式会社 Multilayer film capacitor and manufacturing method thereof
JP2013247206A (en) * 2012-05-25 2013-12-09 Kojima Press Industry Co Ltd Film capacitor element and film capacitor and manufacturing method of film capacitor
US8654503B2 (en) * 2012-06-29 2014-02-18 Zoll Medical Corporation Humidity resistant electronic components

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201374252Y (en) * 2009-01-16 2009-12-30 厦门法拉电子股份有限公司 Novel stacked wound film capacitor
CN201449904U (en) * 2009-06-09 2010-05-05 佛山市顺德区丰明电子科技有限公司 Safety type metallized film capacitor
WO2011073401A1 (en) * 2009-12-18 2011-06-23 Helmut Birkelbach Film capacitor
CN102543438A (en) * 2011-12-07 2012-07-04 厦门法拉电子股份有限公司 Electrode structure of laminated metallic film capacitor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019146707A1 (en) 2018-01-29 2019-08-01 京セラ株式会社 Film capacitor, connection-type capacitor, inverter, and electric vehicle
US11335504B2 (en) 2018-01-29 2022-05-17 Kyocera Corporation Film capacitor, combination type capacitor, inverter, and electric vehicle
WO2020189312A1 (en) 2019-03-19 2020-09-24 京セラ株式会社 Laminated capacitor, linked capacitor, inverter, and electric vehicle
US11854747B2 (en) 2019-03-19 2023-12-26 Kyocera Corporation Stacked capacitor, connected capacitor, inverter, and electric vehicle

Also Published As

Publication number Publication date
DE112012005147T5 (en) 2014-10-09
US20140301019A1 (en) 2014-10-09
DE112012005147B4 (en) 2024-05-23
JP2015503236A (en) 2015-01-29
JP5984097B2 (en) 2016-09-06
CN102543438A (en) 2012-07-04
CN102543438B (en) 2014-04-16
US9281122B2 (en) 2016-03-08

Similar Documents

Publication Publication Date Title
WO2013082951A1 (en) Electrode structure for laminated metallized thin film capacitor
EP1297543B1 (en) Ceramic multilayer capacitor array
WO2017166344A1 (en) Stacked flexible substrate and manufacturing method
CN102299003B (en) Multi-layered ceramic capacitor
KR101871281B1 (en) Multilayer ceramic capacitor, mounting structure of multilayer ceramic capacitor, and taping electronic component array
US9748042B2 (en) Multilayer feedthrough capacitor
JP4134675B2 (en) Multilayer electronic component and manufacturing method thereof
WO2014208843A1 (en) Superconducting wire material having laminated structure and manufacturing method therefor
WO2015167302A1 (en) Method for manufacturing electrode structure for flexible energy storage device, electrode structure manufactured thereby, and energy storage device including same
WO2020050534A1 (en) Hexagonal column-shaped battery cell, manufacturing method therefor, and battery module comprising same
US10117333B2 (en) Multilayer ceramic capacitor, mounting structure of multilayer ceramic capacitor, and taped electronic component array
TW201440309A (en) Crosstalk cancellation in striplines
US20220301776A1 (en) Film capacitor device
JP5141715B2 (en) Multilayer capacitor
CN211654587U (en) High-frequency low equivalent series resistance high-frequency capacitor
JPH0396205A (en) Laminated capacitor
WO2021241957A1 (en) Broadband capacitor
CN203871183U (en) Laminated ceramic capacitor
CN217521858U (en) Multilayer ceramic capacitor
CN217544374U (en) Multilayer ceramic capacitor
CN103928232A (en) Laminating ceramic capacitor
JPH0993069A (en) Multiseries noise filter
CN217768131U (en) Multilayer ceramic capacitor
US11961678B2 (en) Film capacitor device
CN217521859U (en) Multilayer ceramic capacitor

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12855710

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2014545065

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 14362684

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 1120120051475

Country of ref document: DE

Ref document number: 112012005147

Country of ref document: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12855710

Country of ref document: EP

Kind code of ref document: A1