JPH1145819A - Metallized film capacitor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve withstand voltage and current resistance of a capacitor in a metallized film capacitor by facilitating the formation of insulating slits for segmenting a metal vapor deposition electrode, enhancing the working accuracy of a fuse portion provided between segments, and improving the connection between the vapor deposition metal electrode and an electrode drawing portion made by metal spraying. SOLUTION: A metal vapor deposition element 6 of a film 1 is provided with a band path 2 which is connected to a electrode drawing portion, a region 8 which is divided into segments 7 by first insulating slits 3, 4, 5 imparted with three directions other than the direction of the width of the film 1, and a second insulating slit 9 interposed between the band path 2 and the region 8. A first fuse portion 11 is provided at the point where the first insulating slits 3, 4, 5 meet together. Further, a second fuse portion 12 is provided between the band path 2 and the individual segments 7. The individua slits are end round in shape at the individual fuse portions. In this case, the width of the second fuse portion 12 is selected to be not less than 1.0 times that of the fuse portion 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metallized film having a metal-deposited electrode divided into a plurality of segments and having a self-recovery function and a security mechanism, for electric power, charge / discharge or DC filter. The present invention relates to a high-voltage capacitor.

[0002]

2. Description of the Related Art Conventionally, high-voltage capacitors for electric power, charging / discharging or filters use insulating paper or plastic film as a dielectric, or a combination of insulating paper and plastic film, and aluminum as an electrode. A foil electrode type capacitor has been used in which a foil is used and the dielectric and electrode foil are alternately stacked and wound to form a capacitor element. In some cases, a metalized paper or metalized film on which metal is deposited is used instead of the aluminum foil electrode.

[0003]

The dielectric of a foil electrode type capacitor is as thin as several μm to several tens μm and has a large area. Therefore, if the dielectric contains an insulation defect, the dielectric is locally broken down. However, since there is no self-healing function, it is necessary to design in consideration of the defective portion. For this reason, in the conventional design, a method has been adopted in which several dielectrics are overlapped to compensate for a minute defect portion of one dielectric by another dielectric. In this method, the effect was increased as the number of superposed dielectrics increased.However, the thickness between the electrodes was increased, and the disadvantages were that the external dimensions increased, corona was easily generated, and the life of the capacitor was shortened. was there.

Further, in a metallized film capacitor, even if a local dielectric breakdown occurs, the insulation is restored by a self-healing function by scattering of the metal deposition electrode. However, the high-voltage capacitor mainly has a pressure switch protection method by increasing the internal pressure of a container housing the capacitor element as protection at the time of dielectric breakdown, and thus has a drawback that the higher the voltage, the more difficult it is to protect.

For this reason, in a metallized film capacitor disclosed in Japanese Patent Application Laid-Open No. 6-310368, a metal deposition electrode is divided into small portions by grid-like insulating slits, and a fuse portion crossing the insulating slit between adjacent segments. The purpose of the fuse effect is to secure the self-recovery action of the metallized film and the reliability against dielectric breakdown, and to minimize the capacity decrease due to the fuse operation, etc., but in the width direction of the metallized film. In the insulating slit,
Since it is difficult to completely eliminate metal deposition, productivity and yield have been impaired.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks. It is an object of the present invention to improve the pattern of the insulating slit and the shape and dimensions of the fuse portion, and to improve the security function and the effect of the fuse to improve the metallized film. It is an object of the present invention to provide a small and lightweight high-voltage capacitor while dramatically improving the insulation recovery characteristics at the time of dielectric breakdown at a defective portion.

[0007]

According to the metallized film capacitor of the present invention, a metallized film having a metallized electrode on one side or a metallized film having a metallized electrode on both sides and an insulating film are superposed. Or two metalized films with metallized electrodes on one side and two
An insulating film and a plurality of insulating films are alternately wound, and a metal lead is sprayed on both winding end surfaces to provide an electrode lead portion. At least one of the metal-deposited electrodes is formed of a plurality of strip-shaped conductive paths formed continuously along the side edge of the film in contact with the electrode lead portion, and a first insulating slit in three directions other than the width direction of the film. The film includes a region divided into hexagonal segments, and a second insulating slit formed in a longitudinal direction of the film at a boundary between the band-shaped current path and the region divided into the segments.

At six vertices of the hexagonal segment, or at some of the regularly distributed vertices, the electrode is formed at a set point where insulating slits are gathered from three directions. A first fuse portion is formed by the metal deposition layer, and each fuse portion connects three segments arranged around the first fuse portion to each other. The ends of each of the insulating slits in these fuse portions are rounded and terminated. A second fuse portion formed of a metal vapor deposition layer that traverses the second insulating slit and forms the electrode intersects with the segment adjacent to the second insulating slit. Connected.

In the above-described capacitor, when a defective portion exists in the film as in the case of the conventional metallized film capacitor, discharge occurs through the defective portion, and the discharge causes the surrounding metal deposition electrode to evaporate. It is. If the discharge for self-healing becomes large-scale so as to penetrate several layers of the film, the fuse around the segment including the defective portion is blown to limit the discharge current. As a result, the discharge scale can be kept to a minimum, so that a decrease in the capacitance of the capacitor due to the discharge at the defective portion can be suppressed. And since there is no thing in the width direction of the film in the insulating slit, it is possible to form an insulating slit that functions well even if the width is small, and the end of each insulating slit in the fuse portion is rounded. Thus, the fusing current of each fuse portion can be accurately defined.

[0010] In addition, a place where the electrical connection is not good is apt to occur between the metal deposition electrode and the electrode lead-out part, and when the connection at this place is cut off by a large charge / discharge current, A number of segments following it lose their function and result in a significant reduction in capacitor capacitance. But,
By providing the strip-shaped conducting path, the charge / discharge current of the segment where the connection with the electrode lead-out portion is bad can be led to the place where the connection is good, so that the function of these segments is maintained. Can be.

The area of each segment is preferably small in order to suppress the discharge current at the defective portion. However, if the area is too small, the ratio of the area of the insulating slit becomes large, so that the area of 25 mm ² or more is appropriate. Moreover, when the excessively large area of each segment, the loss of capacitance due to a single fuse operation increases, it is appropriate 900 mm ² or less.

[0012] The width W ₂ of the first insulating slit width W ₁ of the narrowest portion of the first fuse part is desirably about the same value. If each segment has a fuse unit three by three, the insulating slit width W ₂ and the fuse unit width W ₁ are both suitably 0.2 to 2.0 mm, if each segment has a fuse unit by six , insulating slit width W ₂ and the fuse unit width W ₁ are both appropriate 0.2～1.75Mm. Further, the film resistance of the metal deposition layer in the segment divided region including each segment and the first fuse portion is suitably from 6 to 40 Ω / □. The width W ₃ of the narrowest portion of the second fuse portion is equal to the width W ₁ of the narrowest portion of the first fuse portion.
The film resistance value of the metal deposition layer in the second fuse portion and the belt-like conductive path is 2 to 10 Ω / □.
Is appropriate.

As described above, according to the present invention, the potential gradient of the film can be safely increased so that the rated voltage of the capacitor can be set high, or the size of the capacitor can be reduced.
It can contribute to weight reduction. Further, it is possible to realize a capacitor suitable for severe use such as power, charge / discharge, and DC filter with a large charge / discharge current.

[0014]

DETAILED DESCRIPTION OF THE INVENTION The capacitor of the present invention has two metallized films having metallized electrodes on one side or one metallized film having metallized electrodes on both sides. Appropriate materials such as a polypropylene film and a polyethylene terephthalate film can be used as the material of these films, and appropriate materials such as zinc, aluminum, and a mixture of zinc and aluminum can be used as the metal to be deposited.

As shown in FIGS. 1 to 4, at least one of these metal-deposited electrodes has a belt-like shape formed continuously along the side edge of the film 1 on the side in contact with the electrode lead-out portion. .., 4, 4... In the three directions other than the width direction of the film 1.
A film 8 between the band-shaped current path 2 and the region 8 in which the metal deposition electrode 6 is divided into a number of hexagonal segments 7, 7,. And a second insulating slit 9 formed in the longitudinal direction. In the illustrated example, the insulating slits 3, 3,... Are in the longitudinal direction of the film 1, and the insulating slits 4, 4,. + 120 ° and -120 ° or + 135 ° and -13
At an angle of 5 °. The shape of the segments 7, 7,... Is appropriate, such as a regular hexagon, a hexagon long in the longitudinal direction of the film 1, and a hexagon long in the width direction of the film 1, but is preferably arranged regularly. .

Each of the insulating slits 3, 3,..., 4, 4,.
,..., 5, 5,... And 9 are formed by not depositing metal on the film 1. On the side edge of the film 1 opposite to the belt-shaped conducting path 2, an insulating margin 10 on which no metal deposition is performed is formed continuously in the longitudinal direction of the film.

At each vertex of the hexagonal segment 7,
The first insulating slits 3, 4, and 5 in three directions are gathered in a star shape. The first fuse portions 11, 11,... Are formed of the above-described vapor-deposited metal at every other three or six locations among these gathering points. Three segments 7 arranged,
7, 7 are electrically coupled to each other. Each fuse part 1
The end of each of the first insulating slits 3, 4, and 5 in FIG. 1 ends in a rounded shape such as a semicircle. At the point where the fuse portion 11 is not formed at the gathering point of the first insulating slits 3, 4, and 5, the insulating slits are connected to each other. The segments 7, 7,... Facing the strip-shaped current path 2 with the second insulating slit 9 interposed therebetween are the second fuse portions 12, 12,. Is connected to the belt-like conducting path 2 by. A belt-shaped conduction path 2 and a second fuse portion 12;
The thickness of the metal deposition layer in 12... Is equal to or larger than the segment divided region 8.

FIGS. 1 and 2 show each segment 7, 7.
3 shows a case where each segment 7, 7,... Is a hexagon long in the longitudinal direction of the film 1. FIG. FIGS. 1 and 3 show a case where first fuse portions 11 are provided at six locations around each segment 7, and FIGS. 2 and 4 show first fuse portions 11 at three locations around each segment. The case where it is provided is shown.

In the case of the films 20 having the metal-deposited electrode 6 on one side as described above, the films 20 are superposed and wound as shown in FIG. , 20 and insulating films 21 and 21 are alternately stacked and wound, and a film 2 having metal-deposited electrodes on both surfaces
In the case of No. 2, as shown in FIG.
6 are wound together, and as shown in FIG. 6, electrode lead portions 23, 23 are provided on both winding ends by metal spraying to form a capacitor element 24. In this case, the films 20, 2
0, or one of the metal-deposited electrodes 6 on both sides of the film 22 is not necessarily divided into segments 7, 7,... As shown in FIGS. However, a band-shaped conducting path 2 made of a thick metal vapor-deposited layer exists on one side edge, and an insulating margin 10 exists on the other side edge.

The above-described capacitor element 24 is shown in FIG.
6 or a suitable number of them are connected in series, parallel, or series-parallel as shown in FIG.
5 and 26 are contained in a container 27, and if necessary, filled with an insulating agent 28 to obtain a product. The insulating agent 28 may be any of gas, liquid, and solid (resin).

Example 1 A test capacitor was manufactured according to the following specifications from a pair of metallized films having the metal deposition pattern shown in FIG. -Metallized polypropylene film: 12 m, 100 m
m width ・ Zinc deposited film resistance value Belt-shaped conduction path and second fuse part: 2Ω / □ Segment division area: 6Ω / □ ・ Segment area: 101.9mm ²・ First fuse part narrowest part width (W ₁ ): 1 0.0 mm ・ First insulating slit width (W ₂ ): 1.0 mm ・ Second fuse section narrowest portion width (W ₃ ): 2.0 mm ・ Second insulating slit width (W ₄ ): 1.0 mm ・ Capacitor capacity : 12μF ・ Insulating agent: Rapeseed oil ・ Container: Square tin case ・ Number of samples: 10

The test method is a cumulative overvoltage test, in which a DC voltage 1 equivalent to 125 V / μm is applied to a test capacitor at room temperature.
500 V is applied for 24 hours, and the capacitance of the capacitor is measured at 1 kHz after the application. Next, a voltage of 1800 V corresponding to 150 V / μm is applied in the same manner, and then the capacitance is measured. Thereafter, the measurement is sequentially repeated while increasing the applied voltage by 300 V (25 V / μm), and the applied voltage is 480.
The test was performed until the voltage reached 0 V (400 V / μm) to evaluate the rate of change in capacitance. FIG. 7 shows the test results.

According to the test results, the dielectric potential gradient was 15
From 0 to 300 V / μm, there is almost no change in the capacitance.
2.5% at 5 V / μm, 5.7% at 350 V / μm, 3
The capacity was reduced by 12.5% at 75 V / μm and 22% at 400 V / μm. Therefore, the rated voltage of the capacitor is 4
140 V or less (dielectric potential gradient is 345 V / μm or less)
It was confirmed that the capacity reduction could be kept to 5% or less by setting to.

Example 2 Using two metallized films of the metal deposition pattern shown in FIG. 1 (the first fuse portion around each segment is six), a test capacitor was manufactured according to the following specifications. -Metallized polypropylene film: 12 m, 100 m
m width ・ Zinc deposited film resistance value Band-shaped current path and second fuse part: 1, 2, 3, 5, 10
Ω / □ Segment division area: 5, 6, 10, 15, 20, 3,
0, 40Ω / □ ・ Segment area: 101.9 mm ² , 122.3 mm
^2. First fuse section narrowest section width (W ₁ ): 0.1, 0.
2, 1.0, 1.75, 2.0mm · first insulating slit width _{(W 2): 0.1, 0.2} ,
1.0, 1.75,2.0mm · second fuse portion narrowest section width (W _3): 3.25mm · second insulating slit width _{(W 4): 0.1, 0.2} ,
1.0, 1.75, 2.0mm ・ Capacitor capacity: 12μF ・ Insulating agent: Rapeseed oil ・ Container: Square tin case ・ Number of samples: 1 type 5 pieces, 19 types total 95 pieces

The test method is a continuous DC conduction test at 70 ° C.
3375V (281V / μm) in hot air circulation type thermostat
Was continuously applied for 4000 hours, and the rate of change in capacity and tan δ after voltage application were evaluated. The test results are shown in Table 1 and FIGS.

[0026]

[Table 1]

From the test results, the following has been found. The number of the first fuse portions around each segment is 6, and the resistance value of the deposited film is 2 to 10Ω in the belt-like conductive path and the second fuse portion.
/ □, 6 to 40Ω / □ in the segmented area,
If the first fuse part width W ₁ is 0.2～1.75Mm, the capacity change rate and tanδ are both good, the first
When fuse portion width W ₁ is small as 0.1 mm, not preferable volume reduction for easy first fuse portion is blown becomes 5% or more, the first fuse part width increases with 2.0mm Conversely, Since the operability of the fuse deteriorates, ta
nδ increases. Further, the first fuse part width W ₁ is desirably equal to the insulating slit width W ₂ in terms of stability and production operations, when the fuse unit width W ₁ is small and 0.1mm insulating slit width W because ₂ is also narrowed, the cause problems in insulation, since the reverse when the fuse unit width W ₁ is as large as more than 2.0mm is greater insulating slit width W _2, the material utilization efficiency of the segment area is reduced Disadvantage in terms of

Even when the first fuse portion width W ₁ is 1.0 mm, which is an appropriate value, the film resistance value of the metal deposition electrode is 1 Ω / □ in the band-shaped current path and the second fuse portion, and 5 Ω in the segment divided region. If it is relatively low, the thickness of the metal deposition film of the first fuse portion is too large, so that the operability of the fuse deteriorates and tan δ increases. Conversely, when the film resistance value is relatively high at 12 Ω / □ or more in the belt-shaped conduction path and the second fuse portion and 50 Ω / □ or more in the segment division region, the thickness of the metal deposition film itself is extremely thin. It is not preferable because the stability of the film resistance value is poor, and the productivity and the yield are reduced.

Therefore, when the number of the first fuse portions around each segment is six as shown in FIG. 1, the resistance of the deposited film in the segment divided region is 6 to 40 Ω / □, the band-shaped conductive path and the second fuse portion. Has a resistance value of 2 to 10 Ω / □ and a first fuse portion width W ₁ and a first insulating slit width W ₂ of 0.
When it was 2 to 1.75 mm, it was found that both the capacity change rate and tan δ were good.

Example 3 A test capacitor was manufactured according to the following specifications using a pair of metallized films of the metal deposition pattern shown in FIG. 2 (three first fuse portions around each segment). -Metallized polypropylene film: 12 m, 100 m
m width ・ Zinc deposited film resistance value Band-shaped current path and second fuse part: 1, 2, 3, 5, 10
Ω / □, segment division area: 5, 6, 10, 15, 20, 3,
0, 40Ω / □ ・ Segment area: 101.9 mm ² , 122.3 mm
^2. First fuse section narrowest section width (W ₁ ): 0.1, 0.
2, 1.0, 2.0, 2.5mm · first insulating slit width _{(W 2): 0.1, 0.2} ,
1.0, 2.0, 2.5mm · second fuse portion narrowest section width (W _3): 3.25mm · second insulating slit width _{(W 4): 0.1, 0.2} ,
1.0, 2.0, 2.5mm ・ Capacitor capacity: 12μF ・ Insulating agent: Rapeseed oil ・ Container: Square tin case ・ Number of samples: 5 types, 95 each type

The test method is a continuous DC conduction test at 70 ° C.
3375 V (281 V / μ) in a hot air circulating thermostat
m) was applied continuously for 4000 hours, and the rate of change in capacity and tan δ after voltage application were evaluated. The test results are shown in Table 2 and FIGS.

[0032]

[Table 2]

The following was found from the test results. The number of the first fuse portions around each segment is three, and the resistance value of the deposited film is 2 to 10Ω in the band-shaped current path and the second fuse portion.
/ □, 6 to 40Ω / □ in the segmented area,
If the first fuse part width W ₁ is 0.2~2.0mm,
Although both the capacity change rate and the tan δ are good, when the first fuse portion width W ₁ is as small as 0.1 mm, the fuse portion is liable to be blown and the capacity decrease becomes 5% or more, which is not preferable. When the section width is as large as 2.5 mm, the operability of the fuse is deteriorated, so that tan δ is increased. Further, since when the fuse unit width W ₁ is small and 0.1mm becomes narrower insulating slit width W _2, the resulting problems in the insulating reverse when the fuse unit width W ₁ is as large as more than 2.5mm insulating because the slit width W ₂ becomes larger, the segment area is disadvantageous in terms of efficiency of use of reduced materials.

The fuse width W ₁ is set to an appropriate value of 1.0.
mm, the metal deposition film of the first fuse portion is relatively low when the film resistance value of the metal deposition electrode is relatively low at 1 Ω / □ in the band-shaped current path and the second fuse portion and 5 Ω / □ in the segment division region. Is too thick, the operability of the fuse deteriorates, and tan δ increases. Conversely, when the film resistance value is relatively high at 12 Ω / □ or more in the belt-shaped conduction path and the second fuse portion and 50 Ω / □ or more in the segment division region, the thickness of the metal deposition film itself is extremely thin. It is not preferable because the stability of the film resistance value is poor, and the productivity and the yield are reduced.

Therefore, when the number of the first fuse portions around each segment is three as shown in FIG. 2, the resistance of the deposited film in the segment divided region is 6 to 40 Ω / □, the band-shaped conductive path and the second fuse portion. Has a resistance value of 2 to 10 Ω / □ and a first fuse portion width W ₁ and a first insulating slit width W ₂ of 0.
When it is 2 to 2.0 mm, it was found that both the rate of change in capacity and tan δ were good.

Example 4 A test capacitor was prepared from a pair of metallized films having the metal deposition pattern shown in FIG. 1 for a current resistance test according to the following specifications. -Metallized polypropylene film: 12 m, 100 m
m width ・ Zinc vapor deposition film resistance value Band-shaped current path and second fuse part: 5Ω / □ Segment division area: 15Ω / □ ・ Segment area: 101.9mm ²・ First fuse part narrowest part width (W ₁ ): 1 1.0 mm ・ First insulating slit width (W ₂ ): 1.0 mm ・ Second fuse section narrowest part width (W ₃ ): 0.8,
0, 1.3, 2.0, 5.0, 10.0, 1
5.0mm ・ Second insulating slit width (W ₄ ): 1.0mm and lack of slit ・ Capacitor capacity: 12μF ・ Insulating agent: Rapeseed oil ・ Container: Square tin case ・ Number of samples: 8

Since there is no approved and appropriate method for evaluating the current resistance of a capacitor, FIG.
A new method using the circuit shown in FIG. FIG.
3A, a series circuit including a side of a changeover switch 42, a variable DC power supply 45, a power supply switch 44, and a charging resistor 43 is provided between both ends of a sample capacitor 41. , A series circuit including a circuit inductance 46 and a peak ammeter 47 is provided. Reference numeral 48 denotes a controller of the changeover switch 42. The changeover switch 42 is set to the a side for a time set within a range of 0.1 to 10 seconds in accordance with the capacity of the sample capacitor 41, and then 0 is set in accordance with the capacity of the capacitor. The changeover switch 42 is switched to the b side for a time set within a range of 0.5 to 5 seconds, and this operation is repeated as one cycle.

After the capacitance (μF) of the sample capacitor 41 at room temperature and tan δ (%) at 1 kHz are measured in advance, the sample capacitor 41 is connected to the circuit shown in FIG.
When the changeover switch 42 is switched to the b side, the charged electric charge is discharged in an attenuated oscillation waveform as shown in FIG. 12 (b), and the oscillation cycle is determined by the capacitor capacity and the circuit inductance. 46. At this time,
The voltage of the power supply 45 is adjusted so that the initial peak current Ip of the discharge is 100 A per 1 m of the length of the electrode of the sample capacitor, and the controller 48 is operated to repeat charging and discharging under the following conditions. Discharge frequency: 100 kHz Discharge peak current Ip: 100 A / m Charge / discharge cycle: 2 times / sec Charge / discharge circuit: 10000 times The test results are shown in Table 3.

[0039]

[Table 3]

In the course of this test, the sample capacitor 41 is damaged by repeated charging and discharging, and the capacitance and tan
and the value of δ changes. Therefore, the change rate (%) of the capacity compared with the initial value and the value of tan δ were examined. tan δ
For all the samples, regardless of the size of the fuse portion in the longitudinal direction, the sample was almost the same, but the capacity was changed for the width of the second fuse portion provided between the second insulating slits with respect to the width of the first fuse portion (W ₁ ) (W ₁ ). When the dimensional ratio of W ₃ ) is 0.8 times, the capacity reduction due to the operation of the second fuse portion during the current resistance test is 5 times.
% Or more and 1.0 times or more, there was little decrease in capacity, and it was found that current withstanding performance could be improved.

According to Examples 1, 2, 3, and 4, the width of the second fuse portion (W ₃ ) is equal to or larger than the width of the first fuse portion (W ₁ ), and the deposition film resistance of the segmented region is small. If the value is 6 to 40 Ω / □ and the deposited film resistance value of the belt-shaped conductive path and the second fuse portion is 2 to 10 Ω / □, the first fuse portion is 6 if the number of the first fuse portions around each segment is six. Width of the narrowest part (W ₁ ) and the width of the first insulating slit (W ₁ )
₂ ) are both 0.2 to 1.75 mm, and if the number of the first fuse portions around each segment is three, the width of the narrowest portion (W ₁ ) of the first fuse portion and the width of the first insulating slit ( When both W ₂ ) are 0.2 to 2.0 mm, both capacity reduction and tan δ are good.

[0042]

As is apparent from the above embodiments, according to the present invention, since there is no insulating slit in the width direction of the metallized film, the productivity and product yield are good, and the width of the insulating slit is reduced. As a result, the decrease in the electrode area related to the capacitance of the capacitor can be reduced. In addition, the fuse operation is accurate because the edge of the insulating slit in each fuse section is rounded. In the event of an abnormality, the fuse is reliably blown, minimizing the decrease in capacitor capacity, and the capacitor capacity due to undesired blowing. Can be prevented from decreasing. The current resistance of the capacitor is increased by the band-shaped current path and the fuse portion adjacent thereto. Therefore, a small and lightweight metallized film capacitor having high safety, voltage resistance and current resistance can be provided at low cost.

[Brief description of the drawings]

FIG. 1 shows a metallized film according to an embodiment of the present invention, wherein (a) is a front view and (b) is a partially enlarged view thereof.

FIG. 2 shows a metallized film according to another embodiment of the present invention, wherein (a) is a front view and (b) is a partially enlarged view thereof.

3A and 3B show a metallized film according to still another embodiment of the present invention, wherein FIG. 3A is a front view and FIG. 3B is a partially enlarged view thereof.

4A and 4B show a metallized film according to still another embodiment of the present invention, wherein FIG. 4A is a front view and FIG. 4B is a partially enlarged view thereof.

FIG. 5 is a cross-sectional view showing various combinations of a plastic film and a metal-deposited electrode according to the present invention.

FIG. 6 is a cross-sectional view of a product in which one and three capacitor elements embodying the present invention are housed in a container, respectively.

FIG. 7 is a graph showing a relationship between a film potential gradient and a capacitance change rate in a cumulative overvoltage test of a capacitor embodying the present invention.

FIG. 8 shows the first fuse portion width W ₁ , the rate of change in capacitance, and t after the DC continuous conduction test in the embodiment shown in FIG. 1 of the present invention.
FIG. 3 is a diagram showing a relationship with an δ.

9 is a diagram showing a relationship between a resistance value of a deposited film, a rate of change in capacitance, and tan δ in a segment divided area after a DC continuous conduction test in the example shown in FIG. 1 of the present invention.

10 is a diagram showing a first fuse portion width W ₁ , a capacitance change rate, and t after a DC continuous conduction test in the embodiment shown in FIG. 2 of the present invention.
FIG. 3 is a diagram showing a relationship with an δ.

11 is a diagram showing a relationship between a resistance value of a deposited film, a rate of change in capacitance, and tan δ in a segmented area after a DC continuous conduction test in the example shown in FIG. 2 of the present invention.

FIG. 12 is a circuit diagram of a current resistance test circuit of a capacitor and a waveform diagram of a discharge current thereof.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 film 2 strip-shaped conducting path 3 to 5 first insulating slit 6 metal-deposited electrode 7 segment 8 segment division area 9 second insulating slit 10 insulating margin 11 first fuse section 12 second fuse section 20 single-sided metal-deposited film 21 insulating film 22 sided metallized film 23 electrode lead portions 24 a capacitor element 25, 26 terminal 27 container 28 insulation material W ₁ first fuse portion width W ₂ first insulating slit width W ₃ second fuse portion width W ₄ second insulating slit width

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Noboru Nishiguchi, Nichicon Co., Ltd., 3rd floor of Uehara Bldg., 3rd floor, 191 Nakaboricho, Ichidori-Karasuma, Nakagyo-ku, Kyoto-shi, Kyoto (72) Inventor Toru Nakaji Kyoto Nichicon Corporation

Claims (7)

[Claims] 1. A metallized film having a metallized electrode on one side, or a metallized film having a metallized electrode on both sides or an insulating film, or two metallized films having a metallized electrode on one side. And two insulating films are alternately overlapped and wound, and a metal is sprayed on both winding end surfaces to provide an electrode lead-out portion. At least one of the metal-deposited electrodes includes the electrode A band-shaped current path formed continuously along the side edge of the film in contact with the drawer, and a region divided into a number of hexagonal segments by first insulating slits in three directions other than the width direction of the film; A second insulating slit formed in a longitudinal direction of the film at a boundary between the band-shaped current path and the region divided into the segments; At least a part of the six vertices crosses the first insulating slit, and three segments sharing the vertices are connected to each other by a first fuse portion formed by a metal deposition layer constituting the electrode. The segment adjacent to the second insulating slit and the strip-shaped conducting path are connected to each other by a second fuse portion formed by a metal deposition layer constituting the electrode across the second insulating slit. The ends of the first and second insulating slits in the first and second fuse portions are each rounded, and the width of the narrowest portion of the second fuse portion is the narrowest of the first fuse portion. Part width 1.0
A metallized film capacitor characterized by being at least twice as large. 2. Each of the segments has six first fuse portions around the segment, the width of the first insulating slit is 0.2 to 1.75 mm, and the width of the first fuse portion is the narrowest. The metallized film capacitor according to claim 1, wherein the width of the portion is 0.2 to 1.75 mm. 3. Each of the segments has three first fuse portions around the segment, the width of the first insulating slit is 0.2 to 2.0 mm, and the width of the first fuse portion is the narrowest. The metallized film capacitor according to claim 1, wherein the width of the portion is 0.2 to 2.0 mm. 4. The film resistance of the metal deposition layer in the segment and the first fuse portion is 6 to 40Ω / □,
2. The metallized film capacitor according to claim 1, wherein a film resistance value of the metal deposition layer in the band-shaped current path and the second fuse portion is 2 to 10 Ω / □. 5. The area of the segment is 25 to 900 m.
metalized film capacitor according to claim 1, characterized in that the m ^2. 6. The metallized film capacitor according to claim 1, wherein a potential gradient of the film at a rated voltage of the capacitor is 150 to 345 V / μm. 7. The metallized film capacitor according to claim 1, wherein the capacitor is used for power, charge / discharge, or DC filter.