WO2013077370A1 - Composition de polissage - Google Patents

Composition de polissage Download PDF

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Publication number
WO2013077370A1
WO2013077370A1 PCT/JP2012/080220 JP2012080220W WO2013077370A1 WO 2013077370 A1 WO2013077370 A1 WO 2013077370A1 JP 2012080220 W JP2012080220 W JP 2012080220W WO 2013077370 A1 WO2013077370 A1 WO 2013077370A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
polishing composition
high mobility
acid
oxidizing agent
Prior art date
Application number
PCT/JP2012/080220
Other languages
English (en)
Japanese (ja)
Inventor
周吾 横田
泰之 大和
哲 鎗田
赤塚　朝彦
修一 玉田
Original Assignee
株式会社 フジミインコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2011258344A external-priority patent/JP2013115153A/ja
Priority claimed from JP2012061153A external-priority patent/JP2013197210A/ja
Application filed by 株式会社 フジミインコーポレーテッド filed Critical 株式会社 フジミインコーポレーテッド
Publication of WO2013077370A1 publication Critical patent/WO2013077370A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Definitions

  • the present invention relates to a polishing composition used for polishing a polishing object containing a high mobility material such as a group IV material and a group III-V compound.
  • the present invention also relates to a polishing method and a substrate manufacturing method using the polishing composition.
  • polishing compositions such as those described in Patent Document 1 or Patent Document 2 conventionally used for polishing III-V compound semiconductor substrates generally include sodium dichloroisocyanurate and sodium hypochlorite. Contains oxidizing agents. This oxidizing agent is easily decomposed in the polishing composition, and the decomposition of the oxidizing agent is accompanied by discoloration of the polishing composition. Since the polishing rate of the group III-V compound semiconductor substrate by the polishing composition decreases as the oxidizing agent decomposes, these polishing compositions have difficulty in storage stability.
  • a portion containing a high mobility material such as a group IV material and a group III-V compound (hereinafter also referred to as a high mobility material portion) and a portion containing a silicon material (hereinafter also referred to as a silicon material portion).
  • a high mobility material portion such as a group IV material and a group III-V compound
  • a silicon material portion a portion containing a silicon material
  • the polishing composition described in Patent Document 1 or Patent Document 2 is sufficient for the high mobility material portion when used for polishing a polishing object having a high mobility material portion and a silicon material portion. High polishing selectivity is not exhibited.
  • an object of the present invention is to improve the storage stability of a polishing composition used for polishing a polishing object containing a high mobility material. Another object of the present invention is to exhibit high polishing selectivity for a high mobility material portion when used in an application for polishing a polishing object having a high mobility material portion and a silicon material portion. An object of the present invention is to provide a polishing composition and to provide a polishing method and a substrate manufacturing method using the polishing composition.
  • a polishing composition for use in polishing a polishing object containing a high mobility material comprising an oxidizing agent and an aprotic compound.
  • a polishing composition containing a polar solvent is provided.
  • the content of the aprotic polar solvent in the polishing composition is preferably 10% by mass or more.
  • the second aspect of the present invention provides a method for polishing a polishing object containing a high mobility material using the polishing composition of the first aspect.
  • a method for producing a substrate by polishing a polishing object having a high mobility material portion and a silicon material portion using the polishing composition of the first aspect provide.
  • a polishing composition used for polishing a polishing object containing a high mobility material it is possible to improve the storage stability of a polishing composition used for polishing a polishing object containing a high mobility material. Further, a polishing composition capable of exhibiting high polishing selectivity for a high mobility material portion when used for polishing an object to be polished having a high mobility material portion and a silicon material portion, and polishing thereof A polishing method using the composition for use and a method for producing a substrate are provided.
  • the polishing composition of the present embodiment is prepared by mixing an oxidizing agent with an aprotic polar solvent. Accordingly, the polishing composition contains an oxidizing agent and an aprotic polar solvent.
  • This polishing composition is used for polishing a polishing object containing a high mobility material such as a group IV material and a group III-V compound.
  • the high mobility material portion is selectively polished in an application of polishing a polishing object having a high mobility material portion and a silicon material portion, more specifically, in an application of polishing the polishing object and manufacturing a substrate.
  • group IV materials include silicon germanium (SiGe), germanium (Ge), and silicon carbide (SiC).
  • III-V compounds include gallium phosphide (GaP), indium phosphide (InP), gallium arsenide (GaAs), indium arsenide (InAs), indium antimonide (InSb), and the like.
  • the silicon material include polysilicon, silicon oxide, silicon nitride, and the like.
  • the electron mobility of indium phosphide, which is a high mobility material is 5400 cm 2 / V ⁇ s.
  • the electron mobility of the gallium arsenide 8500cm hole mobility in 2 / V ⁇ s is 400cm 2 / V ⁇ s
  • the electron mobility of the indium arsenide is 40000cm 2 /
  • the hole mobility is 500 cm 2 / V ⁇ s at V ⁇ s
  • the electron mobility of indium antimonide is 77000 cm 2 / V ⁇ s
  • the hole mobility is 850 cm 2 / V ⁇ s
  • the electron mobility of germanium is 3900cm hole mobility in 2 / V ⁇ s indicates 1900cm 2 / V ⁇ s
  • the high mobility material for silicon material with the both or one of the electron mobility and hole mobility Significantly shows a high value.
  • the kind of oxidizing agent contained in polishing composition is not specifically limited, It is preferable to have a standard electrode potential of 0.3V or more.
  • a standard electrode potential of 0.3V or higher is used, compared with a case where an oxidant having a standard electrode potential of less than 0.3 V is used, the high mobility material portion of the polishing composition There is an advantage that the polishing rate is improved.
  • the oxidizing agent having a standard electrode potential of 0.3 V or more include hydrogen peroxide, sodium peroxide, barium peroxide, organic oxidizing agent, ozone water, silver (II) salt, iron (III) salt, and Permanganic acid, chromic acid, dichromic acid, peroxodisulfuric acid, peroxophosphoric acid, peroxosulfuric acid, peroxoboric acid, performic acid, peracetic acid, perbenzoic acid, perphthalic acid, hypochlorous acid, hypobromous acid, Examples include hypoiodous acid, chloric acid, chlorous acid, perchloric acid, bromic acid, iodic acid, periodic acid, sulfuric acid, persulfuric acid, citric acid, dichloroisocyanuric acid, and salts thereof.
  • hydrogen peroxide, ammonium persulfate, hypochlorous acid, periodic acid, and sodium dichloroisocyanurate are preferable because the polishing rate of
  • the standard electrode potential is expressed by the following equation when all chemical species involved in the oxidation reaction are in the standard state.
  • E0 is the standard electrode potential
  • ⁇ G0 is the standard Gibbs energy change of the oxidation reaction
  • K is its parallel constant
  • F is the Faraday constant
  • T is the absolute temperature
  • n is the number of electrons involved in the oxidation reaction. Therefore, since the standard electrode potential varies depending on the temperature, the standard electrode potential at 25 ° C. is adopted in this specification.
  • the standard electrode potential of the aqueous solution system is described in, for example, the revised 4th edition chemical handbook (basic edition) II, pp 464-468 (edited by the Chemical Society of Japan).
  • the content of the oxidizing agent in the polishing composition is preferably 0.01 mol / L or more, more preferably 0.1 mol / L or more. As the content of the oxidizing agent increases, the polishing rate of the high mobility material portion by the polishing composition is improved.
  • the content of the oxidizing agent in the polishing composition is also preferably 100 mol / L or less, more preferably 50 mol / L or less. As the content of the oxidizing agent decreases, the material cost of the polishing composition can be reduced, and the load on the processing of the polishing composition after polishing, that is, the waste liquid treatment can be reduced.
  • aprotic polar solvent (Aprotic polar solvent) Specific examples of the aprotic polar solvent contained in the polishing composition include acetonitrile, acetone, tetrahydrofuran, N, N-dimethylformamide, and dimethyl sulfoxide.
  • an aprotic polar solvent is used to prevent decomposition of the oxidizing agent in the polishing composition and improve the storage stability of the polishing composition. Therefore, this polishing composition is suitably used in applications for polishing a polishing object containing a high mobility material.
  • the aprotic polar solvent in the polishing composition is a silicon material. Since it functions to suppress hydrolysis of the portion, there is an advantage that the polishing selectivity of the polishing composition for the high mobility material portion is improved.
  • the embodiment may be modified as follows.
  • the polishing composition of the above embodiment may contain two or more kinds of oxidizing agents.
  • the polishing composition of the above embodiment may contain two or more aprotic polar solvents.
  • the polishing composition of the above embodiment may further contain a protic polar solvent such as water.
  • a protic polar solvent such as water.
  • the content of the aprotic polar solvent in the polishing composition is preferably 10% by mass or more.
  • the polishing composition of the above embodiment may further contain abrasive grains.
  • the abrasive grains may be either inorganic particles or organic particles.
  • the inorganic particles include particles made of a metal oxide such as silica, alumina, ceria, titania and the like.
  • Specific examples of the organic particles include polymethyl methacrylate particles.
  • the polishing composition of the above embodiment may further contain a known additive such as a preservative as necessary.
  • the polishing composition of the above embodiment may be a one-component type or a multi-component type including a two-component type.
  • the polishing composition of the above embodiment may be prepared by diluting a stock solution of the polishing composition with water.
  • Polishing compositions of Examples 1 to 9 were prepared by mixing an oxidizing agent with an aprotic polar solvent. Moreover, the polishing composition of Comparative Examples 1 and 2 was prepared by mixing an oxidizing agent with a protic polar solvent. Details of the components in each polishing composition are shown in Table 1. In Table 1, “APS” represents ammonium persulfate, and “H 2 O 2 ” represents hydrogen peroxide.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

La présente invention concerne une composition de polissage qui est utilisée dans des applications de polissage d'un sujet de polissage contenant un matériau à mobilité élevée, et contient un agent oxydant et un solvant polaire aprotique. La composition de polissage contient : un agent oxydant tel que le peroxyde d'hydrogène, le persulfate d'ammonium, le dichloro-isocyanurate de sodium, et similaire ; et un solvant polaire aprotique tel que l'acétonitrile, l'acétone, le tétrahydrofurane, le N,N-diméthylformamide, le diméthylsulfoxyde, et similaire.
PCT/JP2012/080220 2011-11-25 2012-11-21 Composition de polissage WO2013077370A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011258344A JP2013115153A (ja) 2011-11-25 2011-11-25 研磨用組成物
JP2011-258344 2011-11-25
JP2012-061153 2012-03-16
JP2012061153A JP2013197210A (ja) 2012-03-16 2012-03-16 研磨用組成物

Publications (1)

Publication Number Publication Date
WO2013077370A1 true WO2013077370A1 (fr) 2013-05-30

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ID=48469812

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/080220 WO2013077370A1 (fr) 2011-11-25 2012-11-21 Composition de polissage

Country Status (2)

Country Link
TW (1) TW201339290A (fr)
WO (1) WO2013077370A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6327746B2 (ja) * 2014-03-31 2018-05-23 株式会社フジミインコーポレーテッド 研磨用組成物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007029465A1 (fr) * 2005-09-09 2007-03-15 Asahi Glass Company, Limited Agent de polissage, procédé de polissage de surface à polir, et procédé de fabrication de dispositif à circuit intégré semi-conducteur
JP2010540759A (ja) * 2007-10-05 2010-12-24 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド 改善された炭化ケイ素粒子、ならびにその製造方法および使用方法
JP2011513991A (ja) * 2008-03-05 2011-04-28 キャボット マイクロエレクトロニクス コーポレイション 水溶性酸化剤を用いた炭化ケイ素の研磨方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007029465A1 (fr) * 2005-09-09 2007-03-15 Asahi Glass Company, Limited Agent de polissage, procédé de polissage de surface à polir, et procédé de fabrication de dispositif à circuit intégré semi-conducteur
JP2010540759A (ja) * 2007-10-05 2010-12-24 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド 改善された炭化ケイ素粒子、ならびにその製造方法および使用方法
JP2011513991A (ja) * 2008-03-05 2011-04-28 キャボット マイクロエレクトロニクス コーポレイション 水溶性酸化剤を用いた炭化ケイ素の研磨方法

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