WO2013067914A1 - 一种led兼顾导热散热和绝缘耐压的装置 - Google Patents

一种led兼顾导热散热和绝缘耐压的装置 Download PDF

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WO2013067914A1
WO2013067914A1 PCT/CN2012/084149 CN2012084149W WO2013067914A1 WO 2013067914 A1 WO2013067914 A1 WO 2013067914A1 CN 2012084149 W CN2012084149 W CN 2012084149W WO 2013067914 A1 WO2013067914 A1 WO 2013067914A1
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layer
plate
heat dissipation
withstand voltage
led
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PCT/CN2012/084149
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French (fr)
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欧阳伟
欧阳杰
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江苏日月照明电器有限公司
格瑞电子（厦门）有限公司
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Publication of WO2013067914A1 publication Critical patent/WO2013067914A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

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  • the present invention relates to the field of LED applications, and more particularly to an LED device that combines heat dissipation and insulation withstand voltage.
  • LED based on energy saving, environmental protection, long life, fast start-up speed and many other traditional light sources can not be compared, it is being widely promoted.
  • high-power LED is one of the most important environmentally friendly light sources in the future, and its market demand is huge.
  • polycrystalline array type package light sources are widely used at present.
  • FIG. 1 it is a cross-sectional view of a conventional LED heat conducting structure having a solder resist layer 81, a tin-spraying layer 82, a copper foil layer 83, an adhesive insulating layer 84, and an aluminum layer 85 stacked in this order.
  • the copper foil layer 83 is etched with a circuit, and the LED die 9 is directly connected to the copper foil layer 83.
  • the adhesive insulating layer 84 is used on the one hand to adhere the copper foil layer 83 to the aluminum layer 85, and on the other hand.
  • the copper foil layer 83 and the aluminum layer 85 are prevented from being electrically connected, that is, the insulating effect is achieved, and the aluminum layer mainly serves to improve the heat dissipation effect, that is, the heat dissipation layer.
  • the above traditional LED heat conduction structure can meet the application of low power LED, but in the face of high power LED, there is often a problem of poor heat dissipation, which affects its life and luminous flux.
  • An object of the present invention is to provide a device for taking into consideration both heat conduction and insulation resistance of an LED, so as to solve the problem that the LED package base in the prior art cannot achieve both heat dissipation and insulation withstand voltage.
  • the solution of the present invention is:
  • the invention relates to a device which combines heat conduction heat dissipation and insulation withstand voltage, and comprises a hollow structure for directly transferring heat between the LED die and the heat dissipation layer, and an insulation withstand voltage structure which is stacked on a side of the heat dissipation layer away from the LED die.
  • the hollow structure is a through hole formed on the solder resist layer, the copper foil layer, and the adhesion insulating layer, and the LED die is directly connected to the heat dissipation layer.
  • adhesion insulating layer is selected from the group consisting of FR4, CEM1, CEM3 or an insulating paste.
  • the heat dissipation pad of the LED die is connected to the heat dissipation layer by a tin-spraying layer.
  • the heat dissipation layer is an aluminum layer, a copper layer or a temperature equalization plate which is treated with nickel or tin.
  • the insulating withstand voltage structure is an aluminum plate, a copper plate or a temperature equalizing plate on which a surface is coated with a nano ceramic insulating coating or a surface is subjected to anodization to form a protective film.
  • the thickness of the nano ceramic insulating coating or the protective film on the insulating withstand voltage structure LED base withstand voltage value / basic withstand voltage value * unit thickness value, the unit thickness value is corresponding to a basic withstand voltage value measured in advance The thickness of the nano ceramic insulating coating or protective film.
  • the insulating withstand voltage structure has at least one basic plate, which is an aluminum plate, a copper plate or a temperature equalizing plate whose surface is coated with a nano ceramic insulating coating or a surface is formed by anodizing to form a protective film, and is located on an aluminum plate, a copper plate or a temperature equalizing plate.
  • the nano ceramic insulating coating or protective film on the upper and lower sides is flush with the end of the aluminum plate, the copper plate or the temperature equalizing plate.
  • the invention relates to a device that combines heat conduction heat dissipation and insulation withstand voltage, thereby allowing heat transfer between the LED die directly and the heat dissipation layer, thereby greatly improving the heat conduction and heat dissipation performance of the entire LED; Since the LED has both an insulation and a withstand voltage structure, the insulation withstand voltage structure allows the entire device to meet the withstand voltage conditions required for use.
  • the present invention can meet the use requirements in both heat dissipation performance and pressure resistance performance, thereby having the characteristics of high practical application value.
  • Figure 1 is a cross-sectional view of a conventional LED heat conducting structure
  • FIG. 2 is a cross-sectional view showing a heat-dissipating heat-dissipating portion of an LED having both heat-conducting heat dissipation and insulation withstand voltage;
  • FIG. 3 is a cross-sectional view of a first embodiment of an apparatus for insulating and withstanding a voltage in a device that combines both heat conduction and heat dissipation and insulation withstand voltage;
  • FIG. 4 is a cross-sectional view showing a second embodiment of an insulating and withstand voltage acting portion of an apparatus for both heat conduction and heat dissipation and insulation withstand voltage;
  • Figure 5 is a cross-sectional view of Figure 2 in combination with Figure 4;
  • Figure 6 is a cross-sectional view of the structure shown in Figure 2 and the fourth layer of Figure 4 combined;
  • Figure 7 is a cross-sectional view of the structure shown in Figure 2 and 11 in combination with the structure shown in Figure 4;
  • FIG. 8 is a schematic diagram of heat dissipation of a structure according to the present invention.
  • Solder mask 1 tinned layer 2
  • Copper foil layer 3 adheres to insulating layer 4
  • Tin-plated layer 82 copper foil layer 83
  • LED die 9 heat sink pad 91
  • the present invention relates to an LED device that combines heat conduction heat dissipation and insulation withstand voltage.
  • the device includes a hollow structure and an insulation withstand voltage structure, and the hollow structure directly heats the LED die 9 and the heat dissipation layer.
  • the insulating and withstand voltage structure is stacked on the side of the heat dissipating layer away from the LED die 9. Specifically, the insulating withstand voltage structure can be directly fixed on the heat dissipating layer by using a screw fixing manner.
  • the specific heat dissipation layer in the specific implementation, it may be a nickel-plated or tin-plated aluminum layer, a copper layer or a temperature equalization plate 5; the adhesion insulation layer 4 may be selected from FR4, CEM1, CEM3 or insulating glue. .
  • the hollow structure is a through hole formed on the solder resist layer 1, the copper foil layer 3 and the adhesive insulating layer 4, and the LED die 9 is directly connected to the heat dissipation layer; specifically, the LED die 9
  • the heat dissipation pad 91 is connected to the heat dissipation layer by the tin-spraying layer 2.
  • the positive and negative electrodes of the LED die 9 are connected to the copper foil layer 3 through the tin-plated layer 2.
  • the structure shown in FIG. 3 or FIG. 4 can be adopted.
  • the surface of the aluminum plate, the copper plate or the temperature equalization plate 6 is coated to form a nano ceramic insulating coating film 61.
  • the structure obtained by anodizing the surface of the aluminum plate, the copper plate or the temperature equalizing plate 6 to form the protective film 61 is obtained by anodizing the surface of the aluminum plate, the copper plate or the temperature equalizing plate 6 to form the protective film 61.
  • the thickness of the nano ceramic insulating coating or the protective film 61 on the insulating withstand voltage structure LED base withstand voltage value / basic withstand voltage value * unit thickness value, the unit thickness value is in advance
  • the measured thickness of a nano-ceramic insulating coating or protective film 61 corresponds to a basic withstand voltage value.
  • the insulating withstand voltage structure can selectively stack different number of basic boards 7 according to current withstand voltage requirements, and
  • the structure of the combination of Figure 2 is shown in Figures 5, 6 and 7, which can optionally meet UL or VDE certification.
  • the insulating pressure-resistant structure has at least one basic plate 7 which is an aluminum plate, a copper plate or a temperature equalizing plate 6 whose surface is coated to form a nano ceramic insulating coating 61 or whose surface is anodized to form a protective film 61, wherein the aluminum plate is located
  • the nano ceramic insulating coating or protective film 61 on the upper and lower sides of the copper plate or the temperature equalizing plate 6 is flush with the ends of the aluminum plate, the copper plate or the temperature equalizing plate 6.
  • the present invention relates to a device that combines heat conduction and insulation withstand voltage, thereby allowing heat transfer between the LED die 9 and the heat dissipation layer, thereby greatly improving the heat conduction and heat dissipation performance of the entire LED;
  • the device that combines both heat conduction and insulation withstand voltage has an insulation withstand voltage structure, and the insulation withstand voltage structure allows the entire device to meet the withstand voltage conditions required for use. Therefore, compared with the prior art, the present invention can meet the use requirements in both heat dissipation performance and pressure resistance performance, thereby having the characteristics of high practical application value.

Abstract

一种LED兼顾导热散热和绝缘耐压的装置，其涉及LED应用领域，该装置包括让LED晶粒（9）与散热层（5）直接热传递的镂空结构以及叠设在散热层（5）远离LED晶粒（9）一侧的绝缘耐压结构（7）。与现有技术相比，散热性能和耐压性能同时能满足使用需求，具有实际应用价值高的特点。

Description

一种LED兼顾导热散热和绝缘耐压的装置 技术领域
本发明涉及LED应用领域，更具体的说涉及一种兼顾导热散热和绝缘耐压的LED装置。
背景技术
基于LED具有节能、环保、寿命长、启动速度快等诸多传统光源无法比拟的优势，其正被广泛推广。其中高功率LED为未来最重要的环保光源之一，其市场需求巨大，比如目前应用较广的为多晶数组型封装光源。
如图1所示，其为传统LED导热结构的剖视图，其具有从表及里依次叠设的防焊层81、喷锡层82、铜箔层83、粘附绝缘层84以及铝层85，该铜箔层83上蚀刻有电路，该LED晶粒9直接与铜箔层83相连，该粘附绝缘层84一方面用于将铜箔层83粘附在铝层85上，另一方面也避免铜箔层83与铝层85电性导通，即达到绝缘的功效，该铝层则主要起到提高散热效果的作用，即为散热层。上述传统LED导热结构能满足小功率LED的应用，但是在面对高功率LED时则往往会存在散热效果不佳的问题，从而影响它的寿命及光通量等因素。
有鉴于此，本发明人针对现有技术在对LED进行封装时的上述缺陷深入研究，遂有本案产生。
发明内容
本发明的目的在于提供一种LED兼顾导热散热和绝缘耐压的装置，以解决现有技术中LED封装基座无法兼顾散热性和绝缘耐压性的问题。
为了达成上述目的，本发明的解决方案是：
一种LED兼顾导热散热和绝缘耐压的装置，其中，包括让LED晶粒与散热层直接热传递的镂空结构以及叠设在散热层远离LED晶粒一侧的绝缘耐压结构。
进一步，该镂空结构为形成在防焊层、铜箔层和粘附绝缘层上的通孔，该LED晶粒通过直接与散热层相连。
进一步，该粘附绝缘层选自FR4、CEM1、CEM3或绝缘胶。
进一步，该LED晶粒的散热焊盘通过喷锡层而与散热层相连。
进一步，该散热层为经镀镍或喷锡处理的铝层、铜层或者均温板。
进一步，该绝缘耐压结构为表面经镀膜形成纳米陶瓷绝缘镀膜或表面经阳极处理形成保护膜的铝板、铜板或者均温板。
进一步，该绝缘耐压结构上纳米陶瓷绝缘镀膜或保护膜的厚度=LED基座耐压值/基本耐压值*单位厚度值，该单位厚度值为预先测得的一个基本耐压值所对应纳米陶瓷绝缘镀膜或保护膜的厚度。
进一步，该绝缘耐压结构具有至少一块基本板，该基本板为表面经镀膜形成纳米陶瓷绝缘镀膜或表面经阳极处理形成保护膜的铝板、铜板或者均温板，位于铝板、铜板或均温板上下两侧的纳米陶瓷绝缘镀膜或保护膜与铝板、铜板或均温板的端部平齐。
采用上述结构后，本发明涉及的一种LED兼顾导热散热和绝缘耐压的装置，从而让LED晶粒直接与散热层之间进行热传递，如此能大大提高整个LED的导热及散热性能；同时由于该LED兼顾导热散热和绝缘耐压的装置还具有绝缘耐压结构，通过该绝缘耐压结构能让整个装置满足使用时所需的耐压条件。
由此，与现有技术相比，本发明能在散热性能和耐压性能同时满足使用需求，从而具有实际应用价值高的特点。
附图说明
图1为传统LED导热结构的剖视图；
图2为本发明涉及一种LED兼顾导热散热和绝缘耐压的装置中起导热散热作用部分的剖视图；
图3为本发明涉及一种LED兼顾导热散热和绝缘耐压的装置中起绝缘耐压作用部分第一实施例的剖视图；
图4为本发明涉及一种LED兼顾导热散热和绝缘耐压的装置中起绝缘耐压作用部分第二实施例的剖视图；
图5为图2与图4相结合后的剖视图；
图6为图2与4层图4所示结构结合后的剖视图；
图7为图2与11层图4所示结构结合后的剖视图；
图8为本发明涉及结构的散热示意图。
图中：
防焊层1喷锡层2
铜箔层3粘附绝缘层4
镀镍或喷锡处理的铝层、铜层或者均温板5
铝板、铜板或者均温板6
纳米陶瓷绝缘镀膜或保护膜61
基本板7防焊层81
喷锡层82铜箔层83
粘附绝缘层84铝层85
LED晶粒9散热焊盘91
具体实施方式
为了进一步解释本发明的技术方案，下面通过具体实施例来对本发明进行详细阐述。
如图2至图7所示，本发明涉及的一种LED兼顾导热散热和绝缘耐压的装置，该装置包括镂空结构以及绝缘耐压结构，该镂空结构让LED晶粒9与散热层直接热传递，该绝缘耐压结构则叠设在散热层远离LED晶粒9一侧，具体该绝缘耐压结构可以直接采用螺钉的固定方式而固定在散热层上。对于该散热层，在具体实现时，则可以为经镀镍或喷锡处理的铝层、铜层或者均温板5；该粘附绝缘层4则可以选自FR4、CEM1、CEM3或绝缘胶。
在本实施例中，该镂空结构为形成在防焊层1、铜箔层3和粘附绝缘层4上的通孔，该LED晶粒9通过直接与散热层相连；具体该LED晶粒9的散热焊盘91通过喷锡层2而与散热层相连，当然该LED晶粒9的正负极均通过喷锡层2而与铜箔层3相连。
对于该绝缘耐压结构，其可以采用图3或图4所示的结构，对于图3所示结构，其为对铝板、铜板或者均温板6的表面进行镀膜而形成纳米陶瓷绝缘镀膜61，或者为对铝板、铜板或者均温板6的表面进行阳极处理形成保护膜61，而获得的结构。其中，当采用图3所示结构时，该绝缘耐压结构上纳米陶瓷绝缘镀膜或保护膜61的厚度=LED基座耐压值/基本耐压值*单位厚度值，该单位厚度值为预先测得的一个基本耐压值所对应纳米陶瓷绝缘镀膜或保护膜61的厚度。
对于图4所示的结构，其可以作为该绝缘耐压结构的一块基本板7，即该绝缘耐压结构可以根据当前耐压需求而选择性地叠置不同块数的基本板7，其与图2组合的结构如图5、图6和图7所示，其可以选择性地满足UL认证或VDE认证。
即该绝缘耐压结构具有至少一块基本板7，该基本板7为表面经镀膜形成纳米陶瓷绝缘镀膜61或表面经阳极处理形成保护膜61的铝板、铜板或者均温板6，其中，位于铝板、铜板或均温板6上下两侧的纳米陶瓷绝缘镀膜或保护膜61与铝板、铜板或均温板6的端部平齐。需要说明的是，图4所示的结构是可以由图3所示的方式镭射切割或者冲压的方式得到。
这样，本发明涉及的一种LED兼顾导热散热和绝缘耐压的装置，从而让LED晶粒9直接与散热层之间进行热传递，如此能大大提高整个LED的导热及散热性能；同时由于该LED兼顾导热散热和绝缘耐压的装置还具有绝缘耐压结构，通过该绝缘耐压结构能让整个装置满足使用时所需的耐压条件。由此，与现有技术相比，本发明能在散热性能和耐压性能同时满足使用需求，从而具有实际应用价值高的特点。
上述实施例和图式并非限定本发明的产品形态和式样，任何所属技术领域的普通技术人员对其所做的适当变化或修饰，皆应视为不脱离本发明的专利范畴。

Claims (8)

1、一种LED兼顾导热散热和绝缘耐压的装置，其特征在于，包括让LED晶粒与散热层直接热传递的镂空结构以及叠设在散热层远离LED晶粒一侧的绝缘耐压结构。
2、如权利要求1所述的一种LED兼顾导热散热和绝缘耐压的装置，其特征在于，该镂空结构为形成在防焊层、铜箔层和粘附绝缘层上的通孔，该LED晶粒通过直接与散热层相连。
3、如权利要求2所述的一种LED兼顾导热散热和绝缘耐压的装置，其特征在于，该粘附绝缘层选自FR4、CEM1、CEM3或绝缘胶。
4、如权利要求1所述的一种LED兼顾导热散热和绝缘耐压的装置，其特征在于，该LED晶粒的散热焊盘通过喷锡层而与散热层相连。
5、如权利要求1至4任一项所述的一种LED兼顾导热散热和绝缘耐压的装置，其特征在于，该散热层为经镀镍或喷锡处理的铝层、铜层或者均温板。
6、如权利要求1所述的一种LED兼顾导热散热和绝缘耐压的装置，其特征在于，该绝缘耐压结构为表面经镀膜形成纳米陶瓷绝缘镀膜或表面经阳极处理形成保护膜的铝板、铜板或者均温板。
7、如权利要求6所述的一种LED兼顾导热散热和绝缘耐压的装置，其特征在于，该绝缘耐压结构上纳米陶瓷绝缘镀膜或保护膜的厚度=LED基座耐压值/基本耐压值*单位厚度值，该单位厚度值为预先测得的一个基本耐压值所对应纳米陶瓷绝缘镀膜或保护膜的厚度。
8、如权利要求1所述的一种LED兼顾导热散热和绝缘耐压的装置，其特征在于，该绝缘耐压结构具有至少一块基本板，该基本板为表面经镀膜形成纳米陶瓷绝缘镀膜或表面经阳极处理形成保护膜的铝板、铜板或者均温板，位于铝板、铜板或均温板上下两侧的纳米陶瓷绝缘镀膜或保护膜与铝板、铜板或均温板的端部平齐。
PCT/CN2012/084149 2011-11-10 2012-11-06 一种led兼顾导热散热和绝缘耐压的装置 WO2013067914A1 (zh)

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CN104197210A (zh) * 2014-08-22 2014-12-10 江苏日月照明电器有限公司 一种可通过欧洲erp6000h认证的led低压装置及成型方法
CN107806604A (zh) * 2017-10-28 2018-03-16 厦门吉来特光电有限公司 一种led灯具

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