WO2013065094A1 - 半導体プローブによる量子電池の試験装置及び試験方法 - Google Patents
半導体プローブによる量子電池の試験装置及び試験方法 Download PDFInfo
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- WO2013065094A1 WO2013065094A1 PCT/JP2011/075012 JP2011075012W WO2013065094A1 WO 2013065094 A1 WO2013065094 A1 WO 2013065094A1 JP 2011075012 W JP2011075012 W JP 2011075012W WO 2013065094 A1 WO2013065094 A1 WO 2013065094A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/36—Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
- G01R31/385—Arrangements for measuring battery or accumulator variables
- G01R31/387—Determining ampere-hour charge capacity or SoC
- G01R31/388—Determining ampere-hour charge capacity or SoC involving voltage measurements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
- G01R1/06744—Microprobes, i.e. having dimensions as IC details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/36—Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
- G01R31/385—Arrangements for measuring battery or accumulator variables
- G01R31/3865—Arrangements for measuring battery or accumulator variables related to manufacture, e.g. testing after manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/48—Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/36—Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
- G01R31/378—Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC] specially adapted for the type of battery or accumulator
Definitions
- the present invention relates to a test apparatus and a test method for an all-solid battery based on a new operation principle that uses an optical excitation structure change of a metal oxide by ultraviolet irradiation to form an energy level in a band gap and capture electrons. .
- Lithium-ion batteries use a metal double oxide containing lithium in the positive electrode and a material that can accept and release lithium, such as carbon, in the negative electrode. Impregnate with liquid. (Refer to patent document 1 etc.).
- lithium ion batteries use lithium, which is a rare metal, they are expensive in terms of cost, and secondary batteries with higher performance and larger capacity are desired from the viewpoint of performance.
- the inventor of the present application has proposed an all-solid-state semiconductor battery (hereinafter referred to as a quantum battery) that can be reduced in cost and stably operated with a simple configuration (PCT / JP2010-067643). .
- Quantum cells charge by capturing energy by forming energy levels in the band gap by changing the photoexcitation structure of a substrate, a conductive base electrode, and an n-type metal oxide semiconductor covered with an insulating material.
- a layer, a P-type semiconductor layer, and a conductive counter electrode are stacked.
- the charging layer is charged by connecting a power source between the base electrode and the counter electrode.
- Such a quantum battery has been evaluated for current-voltage characteristics and charge / discharge characteristics for confirming the function in the manufacturing process.
- the current-voltage characteristics are generally known as a method for evaluating semiconductor characteristics, but are also applied to performance evaluation for secondary batteries.
- the internal resistance is detected based on measured values of the voltage and current during discharging and charging of the hybrid vehicle battery, and the current-voltage characteristic of the battery is estimated accurately to detect the battery internal resistance more accurately.
- the output range of the battery is divided into a plurality of areas, a set number of voltages and currents are measured for each area, and the current-voltage characteristics of the battery are determined based on the measured values.
- There is a method of specifying and calculating the maximum output of the battery based on the current-voltage characteristics see Patent Document 4).
- the performance as a secondary battery depends on the charge layer in the manufacture of the quantum battery, the charge layer is in the middle of the process of stacking the charge layer in the manufacturing process, rather than evaluating it after it is finished. By evaluating the above, efficient production can be performed.
- Evaluating the function in the middle of the manufacturing process is a means used in the semiconductor field, for example, directly measuring the electrical characteristics of the active semiconductor without actually creating a field-effect thin film transistor
- a measuring apparatus in which a measuring source electrode and a measuring drain electrode are respectively exposed on both sides of a measuring gate electrode covered with an insulating film.
- JP 2002-141062 A JP 2007-5279 A JP 2000-21455 A JP 2000-19233 A Japanese Patent Laid-Open No. 06-275690 JP 2001-267384 A JP 2005-524925 A
- quantum batteries are all-solid-state secondary batteries based on a new principle. In order to evaluate the chip during the manufacturing process, and to evaluate the charge / discharge characteristics and current-voltage characteristics as battery characteristics. In this case, the conventional method cannot be applied as it is, and the structure and characteristics peculiar to the quantum cell must be considered.
- An object of the present invention is to provide a test device and a test method for a quantum cell using a semiconductor probe, which can evaluate the electrical characteristics of a charge layer during the process of manufacturing the quantum cell.
- the subject of the present invention is a quantum cell, which is a band gap by changing a photoexcited structure of a conductive base electrode and an n-type metal oxide semiconductor covered with an insulating material on a substrate.
- a charge layer that forms an energy level and captures electrons, a P-type semiconductor layer, and a conductive counter electrode are stacked.
- an n-type metal oxide semiconductor layer may be provided between the base electrode and the charge layer.
- a layer further stacked on the charge layer is formed on the semiconductor probe, and the semiconductor probe is brought into contact with the charge layer.
- the function of the charge layer in the final finished product can be evaluated.
- the semiconductor probe is configured by laminating a conductive electrode and a metal oxide semiconductor layer made of a metal oxide semiconductor on a support.
- the metal oxide semiconductor of the semiconductor probe Is a p-type semiconductor, for example, nickel oxide or copper aluminum oxide.
- an n-type metal oxide semiconductor layer is formed on the conductive layer of the semiconductor probe. May be provided.
- the n-type metal oxide semiconductor is, for example, titanium dioxide.
- the charge layer forms an energy level in the band gap by irradiating an n-type metal oxide semiconductor covered with an insulating material with ultraviolet rays to change the photoexcitation structure in order to capture electrons.
- the support of the semiconductor probe By configuring the support of the semiconductor probe to have an elastic body or a part of the elastic body, it is possible to control the contact pressure when pressed perpendicularly to the charging layer and to make contact with an appropriate pressure.
- the surface of the charging layer with which the semiconductor probe of the present invention is brought into contact is a surface of fine particles, and in order to bring the surface of the probe into close contact with this surface, not only the pressure but also the probe surface is flexible. It is also necessary to have.
- an elastomer can be used as the material of the elastic body.
- the electrode at the tip of the semiconductor probe and the metal oxide semiconductor layer evaluate the electrical characteristics of the entire charge layer surface while evaluating the charge characteristics for each region with respect to the charge layer surface having a larger area than the tip of the semiconductor probe. .
- the distribution and variation of the characteristics of the charge layer surface can be evaluated, and the difference between each region can be measured.
- the support of the semiconductor probe has a size that covers the entire surface of the charging layer, and includes a plurality of layers composed of independent electrodes and metal oxide semiconductor layers. With the layer formed of the semiconductor layer in contact with the semiconductor probe, the distribution and variation of the electrical characteristics of the charging layer can be evaluated simultaneously.
- the electrical property test apparatus for evaluating the current-voltage characteristics of the charge layer using the semiconductor probe described above is
- a semiconductor probe constituted by laminating a conductive electrode and a metal oxide semiconductor layer made of a metal oxide semiconductor on a support, and an electrode provided in the semiconductor probe and a charging layer for a secondary battery were laminated.
- the electrical property test method for evaluating the current-voltage characteristics of the charging layer using the semiconductor probe described above is configured by laminating a conductive electrode and a metal oxide semiconductor layer made of a metal oxide semiconductor on a support.
- the semiconductor probe, the voltage source for applying a voltage between the electrode provided on the semiconductor probe and the base electrode on which the charging layer for the secondary battery is laminated, and the electrode and the charging layer provided on the semiconductor probe are laminated.
- the current-voltage characteristics of the charging layer are measured using an ammeter that measures the current flowing between the base electrodes.
- the charge / discharge characteristic test apparatus for evaluating the charge / discharge characteristics of the charge layer using the semiconductor probe described above is:
- a voltage source for charging the charging layer by applying a voltage between the base electrode, a load resistor connected in parallel with the voltage source, and a voltmeter for measuring a voltage at the load resistance; Then, the voltage source is shut off, the current from the charge layer is passed through the load resistance, and the charge / discharge characteristics in the charge layer as the battery characteristics are measured by measuring the voltage at the load resistance.
- the charge / discharge characteristic test method for evaluating the charge / discharge characteristics of the charge layer using the semiconductor probe described above is configured by laminating a conductive electrode and a metal oxide semiconductor layer made of a metal oxide semiconductor on a support.
- a voltage source for charging the charging layer by applying a voltage between the semiconductor probe, the electrode provided on the semiconductor probe, and the base electrode on which the charging layer for the secondary battery is laminated, and connected in parallel with the voltage source.
- the load resistance and a voltmeter for measuring the voltage at the load resistance are used to charge the charge layer, and then the voltage source is shut off and the current from the charge layer is caused to flow to the load resistance.
- the charge / discharge characteristics in the charge layer as the battery characteristics are measured by voltage measurement at.
- the current-voltage characteristics of multiple local areas of the charge layer can be measured simultaneously, the distribution of the characteristics can be grasped, and it is easy to identify and repair abnormal or defective parts. For this purpose, the following test apparatus and method are applied.
- the current-voltage characteristics of multiple local areas of the charge layer can be measured simultaneously by forming multiple electrodes and metal oxide semiconductor layers on the support. Can do.
- the current-voltage characteristics of multiple local regions of the charging layer can be obtained by using a semiconductor probe in which multiple electrodes and metal oxide semiconductor layers are formed on a support. Can be measured simultaneously.
- a charge layer charge / discharge characteristic test apparatus using a semiconductor probe it is possible to measure charge / discharge characteristics of a plurality of local regions of a charge layer by forming a plurality of electrodes and metal oxide semiconductor layers on a support. it can.
- the charge / discharge characteristics of a plurality of local regions of the charge layer can be obtained by using a semiconductor probe in which a plurality of electrodes and metal oxide semiconductor layers are formed on a support. Can be measured.
- a substrate, a conductive base electrode, and an n-type metal oxide semiconductor covered with an insulating material are subjected to a photoexcitation structure change to form an energy level in a band gap to capture electrons.
- a charging layer is stacked by a semiconductor probe including an electrode and a metal oxide semiconductor layer in a quantum battery configured by stacking a charging layer, a P-type semiconductor layer, and a conductive counter electrode During the process, the electrical characteristics of the charge layer, that is, current-voltage characteristics and charge / discharge characteristics can be evaluated.
- the semiconductor probe surface and the charging layer surface can be contacted uniformly and the contact pressure can be controlled appropriately.
- the structure of the charge layer region can be obtained by configuring the support of the semiconductor probe so as to cover the entire surface of the charge layer and including a plurality of layers composed of independent electrodes and metal oxide semiconductor layers. Distribution, variation, difference measurement, etc. can be measured at the same time, and it is easy to grasp the characteristics efficiently and to identify and repair abnormal or defective parts.
- 1 is a schematic diagram of an electrical property test apparatus for evaluating current-voltage characteristics of a charge layer using a semiconductor probe according to the present invention.
- the schematic of the charging / discharging characteristic test apparatus which evaluates the charging / discharging characteristic of a charge layer using the semiconductor probe by this invention.
- the present invention is a test apparatus and test method for a quantum battery using a semiconductor probe applied to a quantum battery that is a secondary battery based on a new charging principle adopting a photoexcitation structure change technology in a charge layer, and the invention is more clearly understood.
- the structure and principle of a quantum cell to be applied will be described first, and then a mode for carrying out the present invention will be described.
- FIG. 1 is a diagram showing a cross-sectional structure of a quantum battery to which the present invention is applied.
- a quantum cell 10 has a conductive base electrode 14 formed on a substrate 12, an n-type metal oxide semiconductor layer 16, a charge layer 18 for charging energy, and a p-type metal oxide semiconductor layer 20. And the counter electrode 22 are laminated.
- the substrate 12 may be an insulating material or a conductive material.
- a glass substrate, a polymer film resin sheet, or a metal foil sheet can be used.
- the base electrode 14 and the counter electrode 22 may be formed of a conductive film.
- a metal material there is a silver Ag alloy film containing aluminum Al.
- the forming method include vapor phase film forming methods such as sputtering, ion plating, electron beam evaporation, vacuum evaporation, and chemical vapor deposition.
- the base electrode 14 and the counter electrode 22 can be formed by an electrolytic plating method, an electroless plating method, or the like.
- copper, copper alloy, nickel, aluminum, silver, gold, zinc, tin or the like can be used as a metal used for plating.
- the n-type metal oxide semiconductor layer 16 uses titanium dioxide (TiO 2 ), tin oxide (SnO 2 ), or zinc oxide (ZnO) as a material.
- the charging layer 18 is filled with a fine particle n-type metal oxide semiconductor covered with an insulating film, and the photoexcited structure is changed by irradiation with ultraviolet rays to become a layer having a charging function. ing.
- the n-type metal oxide semiconductor is covered with a silicone insulating film.
- titanium dioxide, tin oxide (SnO 2 ), and zinc oxide (ZnO) are suitable, and as a material that combines titanium dioxide, tin oxide, and zinc oxide. Also good.
- the p-type metal oxide semiconductor formed on the charging layer 18 is provided to prevent injection of electrons from the upper counter electrode 22.
- a material of the p-type metal oxide semiconductor layer 20 nickel oxide (NiO), copper aluminum oxide (CuAlO 2 ), or the like can be used.
- the titanium dioxide of the charging layer 18 has an insulating film formed of silicone.
- the film is not always uniform and varies, and in a remarkable case, the film may not be formed and may be in direct contact with the electrode. In such a case, electrons are injected into titanium dioxide due to recombination, energy levels are not formed in the band gap, and the charge capacity is reduced. Therefore, in order to suppress a reduction in charge capacity and to obtain a higher performance secondary battery, an n-type metal oxide semiconductor layer 16 is formed between the base electrode 14 and the charge layer 18 as shown in FIG. ing.
- FIGS. 3A and 3B show band diagrams of a model structure for explaining a basic phenomenon in which a new energy level is formed by a photoexcitation structure change in a charged layer irradiated with ultraviolet rays.
- the band diagram of FIG. 3A includes an electrode 30, an intermediate crystal layer 32, and an n-type metal oxide semiconductor layer.
- a Fermi level 40 exists between the conduction band 36 and the valence band 38, the Fermi level 40 of the electrode 30 is close to the conduction band 36, and the Fermi level 40 of the n-type metal oxide semiconductor layer 34 is It exists in the middle of the valence band 38.
- the ultraviolet ray 42 is irradiated, the electrons 44 in the valence band 38 in the intermediate crystal layer 32 are excited to the conduction band 36.
- the irradiation of the ultraviolet rays 42 excites the electrons 44 in the valence band 38 in the region of the intermediate crystal layer 32 to the conduction band 36, and the excited electrons 44 are conducted.
- the band 36 is accommodated in the conduction band 36 of the electrode 30 by the inclination of the band 36.
- the valence band 38 holes 46 from which electrons 44 have been accumulated accumulate.
- a time difference occurs between the ultraviolet excitation and the recombination, and the rearrangement of atoms is performed by the time difference. For this reason, the holes 46 remaining in the valence band 38 of the intermediate crystal layer 32 move into the band gap and form new energy levels 48.
- FIG. 4 shows a state after recombination in which a new energy level 48 is formed in the band gap of the intermediate crystal layer 32 by the irradiation of the ultraviolet ray 42. Only at the interface between the electrode 30 and the n-type metal oxide semiconductor layer 34, an increase in electron density in the band gap and a chemical shift of inner-shell electrons were observed, and it is considered that the atomic spacing has changed.
- a new energy level 48 can be formed in the band gap by irradiating the n-type metal oxide semiconductor layer 34 with the ultraviolet ray 42, but this newly formed secondary battery is formed.
- the energy level 48 is used, and a charging function can be provided by controlling the electrons by forming a barrier with an insulating layer between the electrode and the n-type metal oxide semiconductor.
- the charge layer 18 shown in FIG. 1 is an n-type metal oxide semiconductor 26 made of titanium dioxide having a silicone insulating coating 28 formed thereon, as described in FIGS. In this case, a barrier due to an insulating layer is provided between the titanium dioxide and the base electrode.
- Quantum cells form an electric field by applying an external voltage to the energy level formed in the band gap to fill the electrons and connect the load to the electrodes to release the electrons and extract the energy. And serve as a battery. By repeating this phenomenon, it can be used as a secondary battery.
- the manufacturing process of the quantum battery is a process of sequentially stacking functional layers on the substrate, but the function of the charging layer is the most important, and if it can be evaluated when the charging layer is stacked without waiting for completion as a quantum battery, Not only can defective products be cut and an efficient mass production process can be established, but the cause of failure can be determined by identifying abnormal parts and defects, making it easy to repair and manage production equipment.
- FIG. 5 shows a semiconductor probe according to the present invention in which the function is evaluated after the charge layer is laminated in the manufacturing process of the quantum battery.
- “after charging layer stacking” refers to a state in which the charging layer is stacked and ultraviolet light is irradiated to excite the photoexcitation structure change in the n-type metal oxide semiconductor in the charging layer.
- the semiconductor probe 50 has an electrode 54 made of a conductive metal and a metal oxide semiconductor 56 stacked on a support 52 that is an insulator.
- the functional layer after the charging layer 18 is stacked in the quantum battery 10 shown in FIG.
- the probe 50 is brought into close contact. Thereby, operation
- the electrode 54 of the semiconductor probe 50 for the evaluation test only needs to have conductivity, and is not necessarily made of the same material and layer thickness as the target quantum battery 10, and a metal plate, a plated plate, a conductive resin, or the like is used. it can.
- the metal oxide semiconductor 56 is not limited, but preferably has the same material and the same layer thickness as the target quantum battery 10. This is to improve the evaluation accuracy of the electrical characteristics with respect to the charging layer 18.
- the material of the metal oxide semiconductor 56 depends on the functional layer stacking order of the quantum battery 10 that is the object to be measured. In the state in which the n-type metal oxide semiconductor layer 16 and the charging layer 18 are stacked on the substrate 12, the p-type metal oxide semiconductor layer 20 and the counter electrode 22 are stacked on the quantum battery 10 shown in FIG. Therefore, the metal oxide semiconductor 56 of the semiconductor probe 50 is a p-type metal oxide semiconductor, and has the same material and layer thickness as the target quantum cell 10.
- the quantum cell 10 does not need to be in the order of stacking the functional layers as shown in FIG. 1, and the counter electrode 22, the p-type metal oxide semiconductor layer 20, the charging layer 18, and the n-type metal oxide are formed on the substrate 12.
- a structure in which the physical semiconductor layer 16 and the base electrode 14 are sequentially stacked may be employed.
- the semiconductor probe 50 used for the evaluation after the charging layer 18 is stacked uses the metal oxide semiconductor 56 as an n-type metal oxide semiconductor.
- the support 52 may have a convenient shape for handling the semiconductor probe 50, and is preferably an insulating material.
- the support 52 can be provided with a function for bringing the tip of the semiconductor probe 50 into close contact with the charging layer.
- the semiconductor probe 50 is pressurized using the support 52 as an elastic body.
- the contact pressure between the charge layer of the semiconductor probe 50 and the contact 18 of the semiconductor probe 50 is controlled through the elastic body, and the adhesion is improved by pressurizing with an appropriate pressure.
- a specific elastic material is, for example, an elastomer, and various elastomers can be used.
- the purpose of using the support 52 as an elastic body is to improve the adhesion between the semiconductor probe 50 and the charging layer 18 with an appropriate contact pressure along the uneven surface of the charging layer 18 made of fine particles.
- a part of the support 52 may be an elastic body, and a laminated structure of a solid and an elastic body may be used.
- the tip shape of the semiconductor probe 50 may be a quadrangular shape as an example.
- the charging layer 18 is locally evaluated for electrical characteristics, and the charging layer surface is entirely covered by measurement at a plurality of locations. This is to make it possible. Thereby, it becomes easy to identify an abnormal part or a defective part. For this reason, in order to identify an abnormal location or a defective location with high accuracy, a tip shape with a smaller area may be used.
- the tip shape is not limited to a quadrangle, and may be a circle, an ellipse, or a triangle, and can be a shape that can be measured efficiently according to the shape of the quantum cell that is the object to be measured.
- the support 52 can be provided with a stacked portion of a plurality of electrodes 54 and a metal oxide semiconductor 56.
- FIG. 6 is a view of the front end portion of one embodiment of the semiconductor probe 50 as viewed from the front.
- Five stacked portions of the electrode 54 and the metal oxide semiconductor 56 are provided in each of the vertical direction and the horizontal direction of the support 52. Arranged.
- the broken line in FIG. 6 indicates the charge corresponding region 58 of the charge layer 18.
- the metal oxide semiconductor of the semiconductor probe is a p-type semiconductor.
- the n-type metal oxide semiconductor layer can be contacted to evaluate the PN junction as a diode characteristic, and the n-type metal oxide semiconductor layer can be tested.
- the semiconductor probe provided with an n-type metal oxide semiconductor layer is a p-type.
- a p-type metal oxide semiconductor layer can be tested by contacting the metal oxide semiconductor layer, evaluating a PN junction as a diode characteristic.
- FIG. 7 is a diagram showing an outline of an electrical characteristic test apparatus for measuring current-voltage characteristics using a semiconductor probe according to the present invention.
- a device under test 60 is a quantum battery 10 in the middle of production in which the charge layer 18 is laminated in the middle of the production process. Are stacked, and the charge layer 18 undergoes a photoexcited structural change due to ultraviolet irradiation.
- the semiconductor probe 50 is brought into contact with the object to be measured 60 from the vertical direction, and adhesion is maintained with an appropriate pressure. Thereby, it will be in the state by which all the functional layers as a quantum battery were laminated
- a voltage source 62 and an ammeter 64 are connected in series between the electrode 54 of the semiconductor probe 50 and the base electrode 14 of the object 60 to be measured.
- the voltage source 62 can control the voltage value, and current-voltage characteristics can be obtained by measuring the current value in the ammeter 64 with respect to the voltage value from the voltage source 62.
- FIG. 8 is a diagram showing an outline of a charge / discharge characteristic test apparatus for measuring charge / discharge characteristics using a semiconductor probe according to the present invention.
- an object to be measured 60 is a quantum battery 10 in the middle of production in which a charging layer 18 is laminated in an intermediate stage of the production process, and includes a substrate 12, a base electrode 14, an n-type metal oxide semiconductor layer 16 and a charging layer 18.
- a charging layer 18 is laminated in an intermediate stage of the production process, and includes a substrate 12, a base electrode 14, an n-type metal oxide semiconductor layer 16 and a charging layer 18.
- the charge layer 18 undergoes a photoexcited structural change due to ultraviolet irradiation.
- the semiconductor probe 50 is brought into contact with the object to be measured 60 from the vertical direction to maintain adhesion with an appropriate pressure. Thereby, it will be in the state by which all the functional layers as a quantum battery were laminated
- a voltage source 62, a voltmeter 66 and a load resistor 68 are connected in parallel between the electrode 54 of the semiconductor probe 50 and the base electrode 14 of the device under test 60.
- the voltage source 62 can control the voltage value, and after charging the charging layer 18 at a constant voltage, the voltage source 62 is shut off and the voltage applied to the load resistor 68 is measured by the voltmeter 66, and the voltage value with respect to time is determined. Charge / discharge characteristics can be obtained.
- FIG. 9 shows an embodiment in which an actual prototype to-be-measured object 60 is measured with an electrical property test apparatus using the semiconductor probe 50 of the present invention.
- a polyimide film was used for the substrate 12
- a copper alloy was used for the base electrode 14
- titanium dioxide was used for the n-type metal oxide layer 16.
- the charging layer 18 is titanium dioxide fine particles coated with silicone.
- the elastomer 74 was used for the support of the semiconductor probe 50, the counter electrode 54 was a copper alloy, and the metal oxide semiconductor 56 was nickel oxide. By using the elastomer 74, the adhesion between the semiconductor probe 50 and the surface of the charging layer 18 is improved. A laminated region of the counter electrode 54 and the metal oxide 56 becomes a measurement region 76 that can be measured. Furthermore, the electrical characteristics of the charge layer measurement area 78 of the DUT 60 corresponding to the measurement area 76 are measured. The measurement area has a size of 8 mm ⁇ 25 mm.
- a voltage source 62, a voltmeter 66, and an ammeter 64 for current measurement are connected to an electrode (not shown) provided on the elastomer 74 and the base electrode 14 of the object 60 to be measured.
- the base electrode 14 is formed in a region wider than the charging layer 18 on the substrate surface 12 for wiring connection.
- the voltage source 62 is a variable voltage and can output a certain voltage range. By measuring the device under test 60 with this electrical characteristic tester, the relationship of current to voltage can be obtained.
- FIG. 10 shows a current-voltage characteristic specifying result showing data obtained by acquiring the value of the ammeter 64 while the voltage value of the voltage source 62 is monitored by the voltmeter 66.
- the voltage value is changed from -2V to 6V.
- the X axis is a voltage value (V)
- the Y axis is a current value ( ⁇ A).
- the equivalent resistance in the vicinity of 0V to 1V is about 10M ohm, and it was confirmed that the device was operating as a diode characteristic. Note that the diode characteristic is also obtained when the measurement region 76 of the semiconductor probe 50 is in direct contact with the electrode 14 of the DUT 60 and the current-voltage characteristic is measured, and the semiconductor probe 50 functions as well. Confirmed. (Example 2)
- FIG. 11 shows an embodiment in the case where the actually measured object 60 is measured by a charge / discharge characteristic test apparatus using the semiconductor probe 50 of the present invention.
- a polyimide film was used for the substrate 12
- a copper alloy was used for the base electrode 14
- titanium dioxide was used for the n-type metal oxide layer.
- the charging layer 18 is titanium dioxide fine particles coated with silicone.
- the elastomer 74 was used for the support of the semiconductor probe 50, the counter electrode 54 was a copper alloy, and the metal oxide semiconductor 56 was nickel oxide. The use of the elastomer 74 improves the adhesion between the semiconductor probe 50 and the surface of the charging layer 18. A laminated region of the counter electrode 54 and the metal oxide 56 becomes a measurement region 76 that can be measured. Furthermore, the charge / discharge characteristics of the charge layer measurement region 78 of the DUT 60 corresponding to the measurement region 76 are measured.
- a voltage source 62, a voltmeter 66, and a load resistor 68 are connected in parallel to an electrode (not shown) provided on the elastomer 74 and the base electrode 14 of the object 60 to be measured. Further, a switch 80 is provided in series with the voltage source 62 in order to shut off the voltage source 62 after the charging layer 18 is charged.
- the base electrode 14 is formed in a region wider than the charging layer 18 on the substrate surface for wiring connection.
- the charge layer measurement region 78 of the charge layer 18 is charged from the voltage source 62, and then the switch 80 is turned off, and the voltage of the load resistor 68 is measured with the voltmeter together with the elapsed time.
- FIG. 12 shows the case where the charging layer 18 is charged to 1.5 V with the voltage source 62 and then the switch 80 is turned off, and the load resistance RL is set to oven (10 G ⁇ or more), 10 M ⁇ , 0.9 M ⁇ . This is a result of obtaining a voltage value that changes with time while being monitored by a total of 66.
- the X axis is the elapsed time (sec), and the Y axis is the voltage value (V). From the results, it was confirmed that the discharge characteristics as a secondary battery were shown.
- this invention contains the appropriate deformation
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
Description
上述した半導体プローブを用いた充電層の電流―電圧特性を評価する電気特性試験装置は、
上述した半導体プローブを用いた充電層の充放電特性を評価する充放電特性試験装置は、
(実施例1)
(実施例2)
12 基板
14 ベース電極
16 n型金属酸化物半導体層
18 充電層
20 p型金属酸化物半導体層
22 対向電極
26 n型金属酸化物半導体
28 絶縁被膜
30 電極
32 中間結晶層
34 n型金属酸化物半導体層
36 伝導帯
38 価電子帯
40 フェルミレベル
42 紫外線
44 電子
46 正孔
48 エネルギー準位
50 半導体プローブ
52 支持体
54 電極
56 金属酸化物半導体
58 充電対応領域
60 被測定物
62 電圧源
64 電流計
66 電圧計
68 負荷抵抗
74 エラストマ
76 測定領域
78 充電層測定領域
80 スイッチ
82 PETフィルム
Claims (19)
- 導電性の電極と、
金属酸化物半導体からなる金属酸化物半導体層と、
を支持体に積層して構成され、
二次電池用充電層に接触させて特性評価を行うこと、
を特徴とする半導体プローブ。
- 請求項1に記載の半導体プローブにおいて、
前記金属酸化物半導体は、p型半導体であること、
を特徴とする半導体プローブ。
- 請求項2に記載の半導体プローブにおいて、
前記P型半導体は、酸化ニッケル又は銅アルミ酸化物であること、
を特徴とする半導体プローブ。
- 請求項1に記載の半導体プローブにおいて、
前記金属酸化物半導体は、n型半導体であること、
を特徴とする半導体プローブ。
- 請求項4に記載の半導体プローブにおいて、
特性評価の対象となる二次電池用充電層は、p型半導体を介して電極に積層されていること、
を特徴とする半導体プローブ。
- 請求項4に記載の半導体プローブにおいて、
n型金属酸化物半導体は、二酸化チタン、酸化スズ、酸化亜鉛のうち何れか1種であること、
を特徴とする半導体プローブ。
- 請求項1に記載の半導体プローブにおいて、
前記充電層は、電子を捕獲するために、絶縁性物質で覆われたn型金属酸化物半導体に紫外線を照射して、光励起構造変化させることによりバンドギャップ中にエネルギー準位を形成していること、
を特徴とする半導体プローブ。
- 請求項1に記載の半導体プローブにおいて、
前記支持体は、弾性体であること、
を特徴とする半導体プローブ。
- 請求項1に記載の半導体プローブにおいて、
前記支持体は、一部に弾性体を備えたこと、
を特徴とする半導体プローブ。
- 請求項8又は9のいずれかに記載の半導体プローブにおいて、
前記弾性体は、エラストマであること、
を特徴とする半導体プローブ。
- 請求項10に記載の半導体プローブにおいて、
前記支持体に、独立した前記電極及び前記金属酸化物半導体層を複数個備えたこと、
を特徴とする半導体プローブ。
- 導電性の電極と、
金属酸化物半導体からなる金属酸化物半導体層と、
を支持体に積層して構成された半導体プローブと、
前記半導体プローブに備えられている前記電極と二次電池用充電層を積層したベース電極との間に電圧を印加する電圧源と、
前記半導体プローブに備えられている前記電極と前記充電層が積層されている前記ベース電極間に流れる電流を測定する電流計と、
を備え、
前記充電層の電流―電圧特性を測定すること、
を特徴とする半導体プローブを用いた充電層の電気特性試験装置。
- 導電性の電極と、
金属酸化物半導体からなる金属酸化物半導体層と、
を支持体に積層して構成された半導体プローブと、
前記半導体プローブに備えられている前記電極と二次電池用充電層を積層したベース電極との間に電圧を印加する電圧源と、
前記半導体プローブに備えられている前記電極と前記充電層が積層されている前記ベース電極間に流れる電流を測定する電流計と、
を使用して、
前記充電層の電流―電圧特性を測定すること、
を特徴とする半導体プローブを用いた充電層の電気特性試験方法。
- 導電性の電極と、
金属酸化物半導体からなる金属酸化物半導体層と、
を支持体に積層して構成された半導体プローブと、
前記半導体プローブに備えられている前記電極と二次電池用充電層を積層したベース電極との間に電圧を印加して充電層を充電する電圧源と、
前記電圧源と平行に接続された負荷抵抗と、
前記負荷抵抗での電圧を測定する電圧計と、
を備え、
前記充電層に充電し、その後電圧源を遮断して前記充電層からの電流を前記負荷抵抗に流して、前記負荷抵抗での電圧測定により、電池特性としての前記充電層における充放電特性を測定すること、
を特徴とする半導体プローブを用いた充電層の充放電特性試験装置。
- 導電性の電極と、
金属酸化物半導体からなる金属酸化物半導体層と、
を支持体に積層して構成された半導体プローブと、
前記半導体プローブに備えられている前記電極と二次電池用充電層を積層したベース電極との間に電圧を印加して充電層を充電する電圧源と、
前記電圧源と平行に接続された負荷抵抗と、
前記負荷抵抗での電圧を測定する電圧計と、
を使用して、
前記充電層に充電し、その後電圧源を遮断して前記充電層からの電流を前記負荷抵抗に流して、前記負荷抵抗での電圧測定により、電池特性としての前記充電層における充放電特性を測定すること、
を特徴とする半導体プローブを用いた充電層の充放電特性試験方法。
- 請求項12に記載の半導体プローブを用いた充電層の電気特性試験装置において、
前記電極と前記金属酸化物半導体層を前記支持体に複数形成し、
前記充電層の局所的な複数の領域の電流―電圧特性を測定すること、
を特徴とする半導体プローブを用いた充電層の電気特性試験装置。
- 請求項13に記載の半導体プローブを用いた充電層の電気特性試験方法において、
前記電極と前記金属酸化物半導体層を前記支持体に複数形成した半導体プローブを用いて、
前記充電層の局所的な複数の領域の電流―電圧特性を測定すること、
を特徴とする半導体プローブを用いた充電層の電気特性試験方法。
- 請求項14に記載の半導体プローブを用いた充電層の充放電特性試験装置において、
前記電極と前記金属酸化物半導体層を前記支持体に複数形成し、
前記充電層の局所的な複数の領域の充放電特性を測定すること、
を特徴とする半導体プローブを用いた充電層の充放電特性試験装置。
- 請求項15に記載の半導体プローブを用いた充電層の充放電特性試験装置において、
前記電極と前記金属酸化物半導体層を前記支持体に複数形成した半導体プローブを用いて、
前記充電層の局所的な複数の領域の充放電特性を測定すること、
を特徴とする半導体プローブを用いた充電層の充放電特性試験方法。
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CN201180074539.6A CN104025274B (zh) | 2011-10-30 | 2011-10-30 | 采用半导体探针的量子电池的试验装置及试验方法 |
US14/355,329 US9164149B2 (en) | 2011-10-30 | 2011-10-30 | Testing device and testing method for quantum battery using semiconductor probe |
EP11874965.4A EP2772935A4 (en) | 2011-10-30 | 2011-10-30 | DEVICE AND METHOD FOR QUANTITA CELL TESTING BY SEMICONDUCTOR PROBE |
KR1020147014419A KR101643981B1 (ko) | 2011-10-30 | 2011-10-30 | 반도체 프로브에 의한 양자 전지의 시험 장치 및 시험 방법 |
PCT/JP2011/075012 WO2013065094A1 (ja) | 2011-10-30 | 2011-10-30 | 半導体プローブによる量子電池の試験装置及び試験方法 |
CA2853620A CA2853620C (en) | 2011-10-30 | 2011-10-30 | Testing device and testing method for secondary battery using semiconductor probe |
JP2013541487A JP5840697B2 (ja) | 2011-10-30 | 2011-10-30 | 半導体プローブによる量子電池の試験装置及び試験方法 |
TW101111414A TWI545331B (zh) | 2011-10-30 | 2012-03-30 | 由半導體探針所致之量子電池之試驗裝置及試驗方法 |
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JP2017028075A (ja) * | 2015-07-22 | 2017-02-02 | 株式会社日本マイクロニクス | 二次電池用中間構造体、及び二次電池の製造方法 |
KR20180020272A (ko) | 2015-07-22 | 2018-02-27 | 가부시키가이샤 니혼 마이크로닉스 | 이차 전지용 중간 구조체 및 이차 전지의 제조 방법 |
US10705151B2 (en) | 2015-07-22 | 2020-07-07 | Kabushiki Kaisha Nihon Micronics | Intermediate structure unit for secondary cell and method for manufacturing secondary cell |
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EP2772935A4 (en) | 2015-04-01 |
US9164149B2 (en) | 2015-10-20 |
CN104025274B (zh) | 2016-10-05 |
KR20140101337A (ko) | 2014-08-19 |
US20140320108A1 (en) | 2014-10-30 |
KR101643981B1 (ko) | 2016-07-29 |
EP2772935A1 (en) | 2014-09-03 |
TWI545331B (zh) | 2016-08-11 |
CA2853620C (en) | 2017-04-04 |
CA2853620A1 (en) | 2013-05-10 |
JPWO2013065094A1 (ja) | 2015-04-02 |
JP5840697B2 (ja) | 2016-01-06 |
TW201317601A (zh) | 2013-05-01 |
CN104025274A (zh) | 2014-09-03 |
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