WO2013051375A1 - Dicing device, and method for manufacturing semiconductor device - Google Patents

Dicing device, and method for manufacturing semiconductor device Download PDF

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Publication number
WO2013051375A1
WO2013051375A1 PCT/JP2012/073110 JP2012073110W WO2013051375A1 WO 2013051375 A1 WO2013051375 A1 WO 2013051375A1 JP 2012073110 W JP2012073110 W JP 2012073110W WO 2013051375 A1 WO2013051375 A1 WO 2013051375A1
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WIPO (PCT)
Prior art keywords
dicing
semiconductor wafer
stage
inclination angle
blade
Prior art date
Application number
PCT/JP2012/073110
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French (fr)
Japanese (ja)
Inventor
慶成 丸嶋
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シャープ株式会社
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Publication date
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Publication of WO2013051375A1 publication Critical patent/WO2013051375A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment

Definitions

  • the present invention relates to a dicing apparatus used for manufacturing a semiconductor device.
  • dicing is usually performed to cut out an element from a semiconductor wafer.
  • FIG. 13 shows a bird's-eye view of a dicing apparatus for realizing the conventional dicing method.
  • a semiconductor wafer is affixed on a dicing tape affixed to a frame for conveying the apparatus.
  • the semiconductor wafer is cut along a predetermined dicing line by a dicing blade.
  • a dicing operation is performed while ejecting a cleaning liquid (hereinafter referred to as cleaning water) from the nozzle in order to remove cutting waste and cool the dicing blade and the semiconductor wafer.
  • a general dicing apparatus is provided with a stage on the bottom surface side of a dicing apparatus working area, on which a frame for transporting a semiconductor wafer is placed.
  • a dicing blade is provided on the top surface side of the dicing apparatus working area facing the surface.
  • the axial direction of the central axis (blade central axis) of the dicing blade is set parallel to the frame mounting surface of the stage, and further, with respect to a reference horizontal plane perpendicular to the vertical direction. Are also set in parallel. For this reason, the cleaning water ejected from the nozzle during dicing tends to accumulate on the semiconductor wafer.
  • Patent Document 1 discloses a method of manufacturing a semiconductor device that prevents a semiconductor wafer from being separated from a dicing tape by forming a hydrophobic film on the dicing tape application surface side of the semiconductor wafer. .
  • Japanese Patent Publication Japanese Patent Laid-Open No. 10-270387 (published on Oct. 9, 1998)”
  • Patent Document 1 when a hydrophobic film is formed on the dicing tape application surface side of the semiconductor wafer, a process for forming the hydrophobic film on the semiconductor wafer, and the formed hydrophobic property Since it is necessary to newly add a process for removing the film, there is a problem that labor and cost in manufacturing the semiconductor device increase.
  • the present invention has been made in view of the above problems, and its purpose is to add a dicing tape adhesive and a semiconductor wafer without adding new steps (hydrophobic film forming step and removing step).
  • An object of the present invention is to provide a dicing apparatus capable of reducing the cost for manufacturing a semiconductor device by preventing the semiconductor wafer from being separated from the dicing tape due to the intrusion of cleaning water between the two.
  • the dicing apparatus of the present invention has a stage on which a semiconductor wafer is fixedly mounted by an adhesive force of a dicing tape adhesive, and a central axis of rotation parallel to the semiconductor wafer mounting surface of the stage.
  • a dicing apparatus having a dicing blade and a cleaning liquid supply mechanism for spraying a cleaning liquid onto a dicing portion when the semiconductor wafer is diced with the dicing blade, and at least during dicing, the semiconductor wafer mounting surface of the stage is vertical.
  • the inclination angle is set to an angle at which the retention state of the cleaning liquid sprayed on the semiconductor wafer placed on the stage starts to break down. It is characterized by having.
  • the semiconductor device manufacturing method of the present invention performs dicing while wiping the cleaning liquid on the semiconductor wafer fixedly mounted on the stage by the adhesive force of the adhesive of the dicing tape.
  • a method for manufacturing an apparatus wherein a semiconductor wafer placement surface of the stage is supported so as to have an inclination angle from a reference horizontal plane perpendicular to the vertical direction, and the inclination angle is on a semiconductor wafer placed on the stage.
  • the dicing is performed in a state where the staying state of the cleaning liquid sprayed on the surface is set to be equal to or larger than an angle at which the cleaning liquid starts to collapse.
  • the semiconductor wafer placement surface of the stage is supported so as to have an inclination angle from a reference horizontal plane perpendicular to the vertical direction, and the inclination angle is a semiconductor placed on the stage. Since the cleaning liquid sprayed on the wafer is set at an angle greater than the angle at which it starts to break down, the cleaning liquid sprayed on the semiconductor wafer during dicing will immediately flow down from the semiconductor wafer. It is possible to suppress the cleaning liquid from staying on the semiconductor wafer.
  • the cleaning liquid staying during dicing can prevent the cleaning liquid from entering the dicing part and the end of the semiconductor wafer, so that the cleaning liquid does not enter between the semiconductor wafer and the adhesive of the dicing tape.
  • the adhesive of the dicing tape does not react with the cleaning liquid, the adhesive force of the adhesive does not decrease, so that the semiconductor wafer can be prevented from being peeled off from the dicing tape and cut out from the semiconductor wafer. Further, the jumping out of the semiconductor chip (the jumping out of the semiconductor chip due to peeling off from the dicing tape) can be suppressed.
  • the semiconductor chip can be appropriately cut out from the semiconductor wafer without applying extra stress to the semiconductor wafer during dicing, the yield of the semiconductor device is improved, and as a result, the cost of the semiconductor device is reduced. There is an effect that can be.
  • the present invention is a dicing apparatus that performs dicing while wiping a cleaning liquid on a semiconductor wafer placed on a stage, wherein the semiconductor wafer placement surface of the stage is inclined from a reference horizontal plane perpendicular to the vertical direction.
  • the dicing is performed in a state where the inclination angle is set to be equal to or larger than an angle at which the staying state of the cleaning liquid sprayed on the semiconductor wafer placed on the stage starts to collapse.
  • FIG. 1 It is a schematic block diagram of the dicing apparatus which concerns on Embodiment 1 of this invention. It is a schematic sectional drawing which shows the state which affixed the semiconductor wafer on the flame
  • FIG. It is a bird's-eye view of the dicing apparatus shown in FIG. It is an enlarged view of the semiconductor wafer cutting part by the dicing apparatus shown in FIG. It is a schematic block diagram of the dicing apparatus which concerns on Embodiment 4 of this invention. It is a schematic block diagram of the cooling mechanism applied to the dicing apparatus of this invention. It is a bird's-eye view of the conventional dicing apparatus. It is a schematic block diagram of the dicing apparatus shown in FIG. It is an enlarged view of the semiconductor wafer cutting part by the dicing apparatus shown in FIG. It is a figure for demonstrating the mechanism in which a washing
  • FIG. 1 is a diagram showing a schematic configuration of a dicing apparatus 1 according to the present embodiment.
  • the dicing apparatus 1 rotates a stage 10 on which a workpiece (semiconductor wafer 16 to be described later) is placed via a frame 13 and a workpiece placed on the stage 10 by rotation.
  • a dicing blade holding portion (drive mechanism) 14 that supports the frame 13 and the dicing blade 11 and transmits a driving force to the dicing blade 11 is arranged in the working area 100.
  • the working area 100 is a work area for performing dicing work by the dicing apparatus 1.
  • a structural body such as a housing for supporting each component constituting the dicing apparatus 1 is formed along the working area 100.
  • the stage 10 is provided on the bottom surface side 1b of the dicing apparatus working area in the working area 100, and the placement surface 10a on which the frame 13 is placed is inclined at an inclination angle ⁇ from a horizontal plane (reference horizontal plane A) perpendicular to the vertical direction.
  • the mounting surface 10a is parallel to the bottom surface side 1b of the dicing apparatus working area except during the dicing. That is, the inclination angle ⁇ may be 0 ° so as to be parallel to the reference horizontal plane A. Details of the inclination angle ⁇ will be described later.
  • the dicing blade 11 is supported by a dicing blade holding portion 14 fixed to the top surface 1a of the dicing apparatus working area in the working area 100.
  • the dicing blade holding part 14 supports the dicing blade 11 by a support bar 14a fixed to the top surface 1a of the dicing machine working area.
  • the support bar 14 a is provided with a driving source for transmitting a rotational driving force to the dicing blade 11.
  • a motor may be used as a drive source, and this motor may be connected to the blade center shaft 11a of the dicing blade 11 so that the dicing blade 11 is rotationally driven.
  • the support bar 14a of the dicing blade holding part 14 is formed so as to be extendable and contracted so that the dicing blade 11 is brought into contact with a workpiece to be cut during dicing.
  • the axial direction of the blade center axis 11a which is the rotation center of the dicing blade 11, is inclined at an inclination angle ⁇ with respect to the reference horizontal plane so that it is parallel to the mounting surface 10a of the stage 10 during dicing. ing. Thereby, at the time of dicing, the dicing blade 11 comes into contact with the workpiece placed on the stage 10 perpendicularly.
  • the nozzle 12 is provided for injecting (spraying) cleaning water (pure water) onto a cut portion (dicing portion) where the dicing blade 11 and the workpiece are in contact with each other during dicing. Thereby, the dicing blade 11 is cooled and the cutting waste is removed.
  • the nozzle 12 has a structure in which a cleaning water injection port is provided above the cutting portion, and the cleaning water is injected from above to the cutting portion.
  • the structure may be provided below the cutting portion and injecting the washing water from below to above the cutting portion.
  • the frame 13 is provided with a dicing tape 15 on the entire surface, and a semiconductor wafer 16 as a workpiece is attached on the dicing tape 15.
  • the semiconductor wafer 16 is adhered to the frame 13 by the adhesive force of the adhesive of the dicing tape 15, and as a result, is fixed to the frame 13.
  • the semiconductor wafer 16 is fixedly placed on the placement surface 10 a of the stage 10 via the frame 13. In this state, the semiconductor wafer 16 is diced by the dicing blade 11.
  • FIG. 3 is a bird's-eye view of the dicing apparatus 1 shown in FIG.
  • a plurality of chips are formed by a dicing blade 11 while cleaning water is ejected by a nozzle 12 from a semiconductor wafer 16 fixedly mounted by a dicing tape 15 of a frame 13 placed on a stage 10. Cut out.
  • FIG. 4 is an enlarged view of a cut portion of the semiconductor wafer 16.
  • the mounting surface 10 a of the semiconductor wafer 16 of the stage 10 is inclined from the reference horizontal plane A by the inclination angle ⁇ .
  • the axial direction of the blade center axis 11 a of the dicing blade 11 is parallel to the mounting surface 10 a of the stage 10. That is, the dicing blade 11 is also inclined by the inclination angle ⁇ with respect to the reference normal plane B, similarly to the mounting surface 10 a of the stage 10.
  • the intrusion of the cleaning water into the adhesive bonding portion is caused by the excessive retention of cleaning water on the surface of the semiconductor wafer 16 during dicing. If the semiconductor wafer 16 can be inclined and flowed by its own weight, the above problem does not occur.
  • the means for tilting the semiconductor wafer 16 is realized by tilting the mounting surface 10a of the stage 10 described above. That is, by appropriately setting the above-described inclination angle ⁇ , it is possible to prevent the cleaning water from staying on the semiconductor wafer 16 and prevent the cleaning water from entering the adhesive bonding portion, and the adhesive strength of the adhesive can be reduced. It becomes possible to suppress weakening.
  • Table 1 shows the results of examining the relationship between the inclination angle ⁇ and the flow of cleaning water.
  • Table 1 shows a case in which, in the dicing apparatus 1 shown in FIG. 1, pure water as cleaning water ejected from the nozzles 12 during dicing is injected to the cut portion of the semiconductor wafer 16 at 100 ml / min. Shows the results obtained.
  • the cleaning water stays on the semiconductor wafer 16 and is not preferable. If the inclination angle ⁇ is 10 °, the staying state of the cleaning water on the semiconductor wafer 16 collapses and the cleaning water stays on the semiconductor wafer 16. It flows little by little.
  • the cleaning water for the semiconductor wafer 16 is almost equal. It runs down completely.
  • the larger the inclination angle ⁇ the higher the effect of preventing the cleaning water from entering the adhesive bonding portion.
  • the stage 10 in the dicing apparatus 1 is increased.
  • the arrangement positions of the dicing blade 11 and the nozzle 12 need to be significantly changed.
  • the case where the inclination angle ⁇ is 90 ° will be described in detail in a second embodiment described later.
  • the inclination angle ⁇ is 180 °
  • the structure of the dicing apparatus 1 needs to be further changed.
  • the case where the inclination angle ⁇ is 180 ° will be described in detail in Embodiments 3 and 4 described later.
  • No. 1 indicates that the minimum inclination angle is 10 ° when the injection amount is 100 ml / min.
  • the test condition of 2 indicates that the minimum inclination angle is 8 ° when the injection amount is 300 ml / min.
  • the minimum inclination angle is the minimum inclination angle ⁇ at which the cleaning water does not stay on the surface of the semiconductor wafer 16.
  • the injection amount of cleaning water is 300 ml or more per minute, if the inclination angle ⁇ is at least 8 ° or more, the cleaning water does not stay on the surface of the semiconductor wafer 16 and naturally flows in the direction of gravity due to its own weight, If the injection amount of cleaning water is 100 ml per minute, if the inclination angle ⁇ is at least 10 ° or more, the cleaning water does not stay on the surface of the semiconductor wafer 16 and flows naturally in the direction of gravity due to the weight of the cleaning water. It can be seen that even when the injection amount of the cleaning water is changed, the inclination angle ⁇ for allowing the cleaning water to flow down naturally in the direction of gravity due to its own weight hardly changes.
  • the injection amount of washing water is 100 ml / min. Since the test condition No. 1 is the lowest level of injection amount that cannot normally be performed, it is appropriate that the lower limit value of the inclination angle ⁇ is 10 °.
  • the lower limit value of the inclination angle ⁇ is 10 °.
  • the lower limit value of the inclination angle ⁇ is limited to 10 °.
  • the inclination angle at which the retention state of the cleaning liquid on the semiconductor wafer starts to collapse may be set as the lower limit value of the inclination angle ⁇ .
  • the adhesive and the cleaning water of the dicing tape 15 can be prevented.
  • dicing can be performed effectively without giving stress to the semiconductor wafer 16 and without taking the trouble of processing, so that the yield of semiconductor chips cut out from the semiconductor wafer 16 can be increased, There is an effect that the cost for manufacturing the semiconductor device can be reduced.
  • FIG. 5 is a diagram showing a schematic configuration of the dicing apparatus 2 according to the present embodiment.
  • the dicing apparatus 2 rotates a stage 20 on which a workpiece (semiconductor wafer 26 described later) is placed via a frame 23 and a workpiece placed on the stage 20 by rotation.
  • a dicing blade holding portion (drive mechanism) 24 that supports the frame 23 and the dicing blade 21 and transmits a driving force to the dicing blade 21 is arranged in the working area 200.
  • the working area 200 is a work area for performing dicing work by the dicing apparatus 2.
  • a structural body such as a housing for supporting each component constituting the dicing apparatus 2 is formed along the working area 200.
  • the stage 20 is provided on the left side 2b of the dicing apparatus working area in the working area 200, and the placement surface 20a on which the frame 23 is placed is inclined with respect to a horizontal plane (reference horizontal plane A) perpendicular to the vertical direction.
  • the angle ⁇ is designed to be 90 °.
  • the dicing blade 21 is supported by a dicing blade holding part 24 fixed to the right side 2a of the dicing apparatus working area in the working area 200.
  • the dicing blade holding part 24 supports the dicing blade 21 by a support bar 24a fixed to the right side 2a of the dicing machine working area.
  • the support bar 24 a is provided with a driving source for transmitting a rotational driving force to the dicing blade 21.
  • a motor may be used as a drive source, and this motor may be connected to the blade center shaft 21a of the dicing blade 21 so that the dicing blade 21 is rotationally driven.
  • the support bar 24a of the dicing blade holding part 24 is formed to be extendable and contracted so that the dicing blade 21 is brought into contact with the workpiece to be cut during dicing.
  • the tilt angle ⁇ 90 ° with respect to the reference horizontal plane so that the axial direction of the blade center axis 21a, which is the center of rotation of the dicing blade 21, is parallel to the placement surface 20a of the stage 20 during dicing. It is inclined at. Thereby, at the time of dicing, the dicing blade 21 comes into contact with the workpiece placed on the stage 20 perpendicularly.
  • the nozzle 22 is provided to inject cleaning water (pure water) to a cut portion (dicing portion) where the dicing blade 21 and the workpiece are in contact with each other during dicing. Thereby, the dicing blade 21 is cooled and the cutting waste is removed.
  • the nozzle 22 has a structure in which a cleaning water injection port is provided above the cutting portion, and the cleaning water is injected from above to below the cutting portion.
  • the frame 23 is provided with a dicing tape 25 on the entire surface, and a semiconductor wafer 26 as a workpiece is attached on the dicing tape 25.
  • the semiconductor wafer 26 is adhered to the frame 23 by the adhesive force of the adhesive of the dicing tape 25, and as a result, is fixed to the frame 23.
  • the semiconductor wafer 26 is fixedly mounted on the mounting surface 20 a of the stage 20 through the frame 23. In this state, the semiconductor wafer 26 is diced by the dicing blade 21.
  • (Dicing) 6 is a bird's-eye view of the dicing apparatus 2 shown in FIG.
  • a plurality of chips are cut out by a dicing blade 21 while cleaning water is ejected by a nozzle 22 from a semiconductor wafer 26 bonded by a dicing tape 25 of a frame 23 placed on a stage 20. .
  • FIG. 7 is an enlarged view of a cut portion of the semiconductor wafer 26.
  • the inclination angle ⁇ of the mounting surface 20a of the stage 20 is set to 90 ° during dicing while injecting the cleaning water from the nozzle 22, the cleaning water
  • the gravity drop direction matches the gravity direction, and the retention due to the surface tension on the semiconductor wafer 26 is small, so that the cleaning water flows most efficiently.
  • the stage 20 is located on the left side 2b of the dicing apparatus working area parallel to the reference normal plane B. Even if the inclination angle ⁇ of the mounting surface 20a of the stage 20 deviates from 90 ° and becomes 80 ° or 100 °, the cleaning water is not as much as when the inclination angle ⁇ is 90 °.
  • the gravity drop direction and the gravity direction substantially coincide with each other, and the retention due to the surface tension on the semiconductor wafer 26 is small, so that the cleaning water efficiently flows down.
  • the stage needs to be provided on the ceiling surface side.
  • FIG. 8 is a diagram showing a schematic configuration of the dicing apparatus 3 according to the present embodiment.
  • the dicing apparatus 3 rotates a stage 30 on which a workpiece (semiconductor wafer 36 described later) is placed via a frame 33, and a workpiece placed on the stage 30 by rotation.
  • a dicing blade holding portion (drive mechanism) 34 that supports the frame 33 and the dicing blade 31 and transmits a driving force to the dicing blade 31 is arranged in the working area 300.
  • the working area 300 is a work area for performing dicing work by the dicing apparatus 3.
  • a structural body such as a housing for supporting each component constituting the dicing apparatus 3 is formed along the working area 300.
  • the dicing blade 31 is supported by a dicing blade holding portion 34 fixed to the bottom surface side 3b of the dicing apparatus working area in the working area 300.
  • the dicing blade holding part 34 supports the dicing blade 31 by a support bar 34a fixed to the bottom surface side 3b of the dicing apparatus working area.
  • the support bar 34 a is provided with a driving source for transmitting a rotational driving force to the dicing blade 31.
  • a motor may be used as a drive source, and this motor may be connected to the blade center shaft 31a of the dicing blade 31 so that the dicing blade 31 is rotationally driven.
  • the support bar 34a of the dicing blade holding part 34 is formed so as to be extendable and contracted so that the dicing blade 31 is brought into contact with the workpiece to be cut during dicing.
  • the axial direction of the blade center axis 31a which is the rotation center of the dicing blade 31 is parallel to the reference horizontal plane A so as to be parallel to the mounting surface 30a of the stage 30 during dicing. Thereby, at the time of dicing, the dicing blade 31 comes into contact with the workpiece placed on the stage 30 perpendicularly.
  • the nozzle 32 is provided to inject cleaning water (pure water) to a cut portion (dicing portion) where the dicing blade 31 and the workpiece are in contact with each other during dicing. Thereby, the dicing blade 31 is cooled and the cutting waste is removed.
  • the nozzle 32 has a structure in which a cleaning water injection port is provided below the cutting portion, and the cleaning water is injected from below to above the cutting portion.
  • the frame 33 is provided with a dicing tape 35 on the entire surface, and a semiconductor wafer 36 as a workpiece is attached on the dicing tape 35.
  • the semiconductor wafer 36 is adhered to the frame 33 by the adhesive of the dicing tape 35, and as a result, is fixed to the frame 33.
  • the semiconductor wafer 36 is fixedly placed on the placement surface 30 a of the stage 30 through the frame 33. In this state, the semiconductor wafer 36 is diced by the dicing blade 31.
  • FIG. 9 is a bird's-eye view of the dicing apparatus 3 shown in FIG.
  • a plurality of chips are cut out by a dicing blade 31 while cleaning water is ejected by a nozzle 32 from a semiconductor wafer 36 bonded by a dicing tape 35 of a frame 33 placed on a stage 30. .
  • FIG. 10 is an enlarged view of a cut portion of the semiconductor wafer 36.
  • the mounting surface 30a of the semiconductor wafer 36 of the stage 30 is parallel to the reference horizontal plane A and is directed downward.
  • the axial direction of the blade center axis 31a of the dicing blade 31 is parallel to the mounting surface 30a of the stage 30. Yes.
  • the inclination angle ⁇ of the mounting surface 30a of the stage 30 is set to 180 ° during dicing while injecting the cleaning water from the nozzle 32, the cleaning water The direction in which the gravity falls and the direction of gravity coincide with each other, and the washing water flows down efficiently.
  • dicing can be performed effectively without giving stress to the semiconductor wafer 36 and without taking time and effort during processing, so that the yield of semiconductor chips cut out from the semiconductor wafer 36 can be increased,
  • the semiconductor chip can be provided at a low cost.
  • the dicing apparatus 3 is a dicing apparatus that has conventionally existed, that is, a dicing apparatus in which a dicing blade is provided on the top surface side of the dicing apparatus working area and a stage is provided on the bottom surface side of the dicing apparatus working area. This can be realized simply by reversing the arrangement positions of the dicing blade and the stage.
  • FIG. 11 is a diagram showing a schematic configuration of the dicing apparatus 4 according to the present embodiment.
  • the dicing device 4 basically has the same configuration as the dicing device 3 according to the third embodiment. That is, as shown in FIG. 11, the dicing apparatus 4 includes a stage 40, a dicing blade 41 that cuts the workpiece placed on the stage 40 by rotation, and a dicing portion of the workpiece by the dicing blade 41.
  • a nozzle (cleaning liquid supply mechanism) 42 for injecting a cleaning liquid (hereinafter referred to as cleaning water), a frame 43 for placing and conveying a workpiece, and a dicing blade 41 are supported, and a driving force is applied to the dicing blade 41.
  • a dicing blade holding part (drive mechanism) 44 for transmitting is arranged in the working area 400.
  • the working area 400 is a work area for performing dicing work by the dicing apparatus 4.
  • a structural body such as a housing for supporting each component constituting the dicing apparatus 4 is formed along the working area 400.
  • the arrangement position of the dicing blade 41 is supported by the dicing blade holding portion 44 fixed to the side surface 4b of the dicing apparatus working area in the working area 400.
  • the dicing blade holding portion 44 supports the dicing blade 41 by a support bar 44a fixed to the side surface 4b of the dicing apparatus working area.
  • the support bar 44 a is provided with a driving source for transmitting a rotational driving force to the dicing blade 41.
  • a motor may be used as a drive source, and this motor may be connected to the blade center shaft 41a of the dicing blade 41 so that the dicing blade 41 is rotationally driven.
  • the dicing blade holding part 44 is provided so as to be movable to the dicing apparatus working area top side 4a side together with the support bar 44a. Thereby, the dicing blade 41 comes into contact with the workpiece to be cut during dicing.
  • the nozzle 42 is provided to inject cleaning water (pure water) to a cut portion (dicing portion) where the dicing blade 41 and the workpiece are in contact with each other during dicing. Thereby, the dicing blade 41 is cooled and the cutting waste is removed.
  • the frame 43 is provided with a dicing tape 45 on the entire surface, and a semiconductor wafer as a workpiece is attached on the dicing tape 45.
  • the semiconductor wafer is adhered to the frame 43 by the adhesive of the dicing tape 45, and as a result, is fixed to the frame 43.
  • the semiconductor wafer is fixedly mounted on the mounting surface 40 a of the stage 40 through the frame 43. In this state, the semiconductor wafer is diced by the dicing blade 41.
  • the dicing blade holding portion 44 is provided on the side surface 4b of the dicing apparatus working area in the stage 40, it does not exist at the position where the wash water injected toward the placement surface 40a of the stage 40 falls under its own weight. Become. For this reason, unnecessary cleaning water is not applied to the dicing blade holding unit 44, so that deterioration or failure of the mechanism of the dicing blade holding unit 44 due to the application of cleaning water to the dicing blade holding unit 44 can be reduced. There is an effect.
  • the dicing blade holding portion 44 that is a drive mechanism for driving the dicing blade 41 is fixed to the dicing device working area side surface 4b via the support bar 44a.
  • the dicing blade holding part 44 is provided at a position that is off the projection surface of the semiconductor wafer placed on the placement surface 40 a of the stage 40.
  • the dicing blade is a drive mechanism that drives the dicing blade at a position off the projection surface.
  • the present invention is not limited to this example, and the diverging blade holding unit 44 is off the projection plane. As long as the dicing blade holding portion 44 is disposed at a position, the attachment position may be anywhere.
  • the main purpose of the cleaning water is to eliminate clogging of the blade blades due to cutting waste and the like rather than cooling. Further, in each embodiment, even when the cleaning water is immediately dropped from the semiconductor wafer, since the cleaning water is continuously injected, there is a particular problem in cooling the semiconductor wafer and the dicing blade. Does not occur.
  • a cooling mechanism as shown in FIG. 12 may be provided in the dicing apparatus.
  • a high thermal conductive dicing tape is used as the dicing tape.
  • Auxiliary cooling is performed from the back side through a dicing tape, and further, a cooling water pipe is provided in the stage to cool the semiconductor wafer from the further back side of the dicing tape.
  • a dicing apparatus having a dicing blade parallel to the mounting surface and a cleaning liquid supply mechanism for spraying a cleaning liquid (hereinafter referred to as cleaning water) to a dicing portion when dicing a semiconductor wafer with the dicing blade, at least during dicing
  • the semiconductor wafer placement surface of the stage is supported so as to have an inclination angle from a reference horizontal plane orthogonal to the vertical direction, and the inclination angle is applied to the cleaning water sprayed onto the semiconductor wafer placed on the stage. It is set to be more than the angle at which the staying state starts to collapse.
  • the manufacturing method of the semiconductor device which dices while spraying washing water with respect to the semiconductor wafer fixedly mounted by the adhesive force of the adhesive of a dicing tape on a stage
  • the semiconductor wafer placement surface of the stage is supported so as to have an inclination angle from a reference horizontal plane perpendicular to the vertical direction, and the inclination angle is sprayed onto the semiconductor wafer placed on the stage.
  • the dicing is performed in a state where the cleaning water staying state is set to be equal to or larger than the angle at which the state of starting the collapse of the washing water starts.
  • the semiconductor wafer placement surface of the stage is supported so as to have an inclination angle from a reference horizontal plane perpendicular to the vertical direction, and the inclination angle is a semiconductor placed on the stage. Since the cleaning water sprayed on the wafer is set at an angle greater than the angle at which it starts to collapse, the cleaning water sprayed on the semiconductor wafer during dicing will immediately flow down from the semiconductor wafer. It is possible to suppress the retention of cleaning water on the semiconductor wafer during dicing.
  • the cleaning water staying in the dicing can prevent the cleaning water from entering the dicing portion and the end of the semiconductor wafer, so that the cleaning water is applied to the adhesive bonding portion between the semiconductor wafer and the dicing tape. Do not enter.
  • the adhesive of the dicing tape and the washing water do not react with each other, the adhesive strength of the adhesive does not decrease, so that the semiconductor wafer can be prevented from being peeled off from the dicing tape and cut out from the semiconductor wafer. It is possible to suppress the protruding semiconductor chip (the semiconductor chip protruding due to peeling off from the dicing tape).
  • the semiconductor chip can be appropriately cut out from the semiconductor wafer without applying extra stress to the semiconductor wafer during dicing, the yield of the semiconductor device is improved, and as a result, the cost of the semiconductor device is reduced. There is an effect that can be.
  • the inclination angle ⁇ is 10 ° or more, preferably 20 ° or more, and the embodiment in the case of 90 ° and the embodiment in the case of 180 ° have been described. May be set to any angle between 10 ° and 350 °. If the inclination angle ⁇ is set within this range, it is possible to prevent the cleaning water from staying on the semiconductor wafer during dicing.
  • the cleaning water is sprayed from the upper side to the lower side with respect to the dicing portion, and the inclination angle set at the time of dicing is set.
  • is 90 ° to 270 °, it is preferable to spray cleaning water from below to above the dicing site.
  • the cleaning water can be stably sprayed onto the semiconductor wafer.
  • the stage mounting surface is upward except in the case of 90 ° and 270 °.
  • the stage mounting surface faces downward except in the case of 90 ° and 270 °, so that it is below the dicing portion.
  • the semiconductor wafer for solar cells which is weak against stress and thinned. ) Can be appropriately diced.
  • the adhesive pressure sensitive adhesive generated by the reaction between the dicing tape adhesive and the cleaning water since the cleaning water is difficult to enter between the semiconductor wafer and the dicing tape during dicing, the adhesive pressure sensitive adhesive generated by the reaction between the dicing tape adhesive and the cleaning water. It is possible to prevent a decrease in power. For this reason, it is possible to perform dicing with the semiconductor wafer lightly attached to the dicing tape by using (1) a dicing tape whose adhesive has a weak adhesive strength and (2) a general sponge roller. .
  • the semiconductor wafer can be suitably used for a thinned semiconductor wafer that may be broken by the stress when peeling from the dicing tape.
  • a semiconductor wafer for a solar cell (hereinafter referred to as a solar cell) is an example that represents a thin film semiconductor wafer.
  • the electrode surface side of the solar cell is attached to a dicing tape. Since the adhesive of the dicing tape enters into the recesses and exerts a strong anchor effect, it is necessary to make the adhesive force of the adhesive of the dicing tape as weak as possible. On the contrary, even when the light receiving surface side of the solar cell is affixed to the dicing tape, it goes without saying that it is necessary to make the adhesive force of the adhesive of the dicing tape as weak as possible in view of the thin film semiconductor wafer.
  • the adhesive strength of this adhesive may be an adhesive strength that does not peel the solar cell from the dicing tape during dicing.
  • the dicing apparatus of the present invention can be suitably used for dicing any semiconductor wafer from a general semiconductor wafer to a semiconductor wafer that is vulnerable to stress such as a solar cell. It can be suitably used for dicing.
  • the inclination angle set at the time of dicing is 10 ° to 350 °.
  • the cleaning solution sprayed on the semiconductor wafer will immediately flow down, and the cleaning solution that remains during dicing will cause the cleaning solution remaining on the dicing sites and ends of the semiconductor wafer. Since the intrusion can be prevented, the adhesive of the dicing tape and the cleaning liquid react to reduce the adhesive strength of the adhesive, so that the semiconductor wafer can be surely removed from the dicing tape and cut out from the semiconductor wafer. It is possible to suppress the protruding semiconductor chip (the semiconductor chip protruding due to peeling off from the dicing tape). Therefore, there is an effect that various problems caused by the penetration of the cleaning liquid do not occur.
  • the inclination angle is preferably 20 ° or more and 340 ° or less.
  • the tilt angle set during dicing is preferably 90 °.
  • the direction of gravity drop of the cleaning liquid matches the direction of gravity, and the cleaning liquid stays on the semiconductor wafer less due to surface tension, so that the cleaning liquid flows most efficiently.
  • the tilt angle set during dicing is preferably 180 °.
  • That the inclination angle is 180 ° is the structure of the dicing apparatus in which the dicing surface of the semiconductor wafer is directed downward and the dicing blade is directed upward.
  • the drive mechanism for driving the dicing blade is provided at a position off the projection surface of the semiconductor wafer placed on the stage.
  • the projection surface of the semiconductor wafer placed on the stage is also a surface showing a range in which the cleaning liquid falls during dicing, by providing a drive mechanism for driving the dicing blade at a position off the projection surface, Since no cleaning liquid is applied to the drive mechanism, the deterioration due to the cleaning liquid being applied to the drive mechanism is eliminated, and the failure can be reduced.
  • the cleaning liquid supply mechanism sprays the cleaning liquid from the upper side to the lower side when the tilt angle set during dicing is 10 ° to 90 °, 270 ° to 350 °, and is set during dicing.
  • the tilt angle set during dicing is 10 ° to 90 °, 270 ° to 350 °, and is set during dicing.
  • the inclination angle is 90 ° to 270 °, it is preferable to spray the cleaning liquid from below to above the dicing site.
  • the cleaning liquid can be sprayed stably on the semiconductor wafer.
  • the stage mounting surface is upward except in the case of 90 ° and 270 °.
  • the stage mounting surface is directed downward. By spraying the cleaning liquid upward, the cleaning liquid can be efficiently sprayed.
  • the semiconductor wafer is preferably a semiconductor wafer for solar cells.
  • the semiconductor wafer for solar cells that is weak against stress and thinned can be appropriately diced. it can.
  • the present invention can be applied to the semiconductor-related field, and in particular, it can be applied to the solar cell (solar cell) field in which a significant demand increase is expected in the future.
  • solar cell solar cell

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Abstract

The placement surface (10a) of a stage (10) is supported so as to have a tilt angle (θ) from a reference horizontal surface (A) orthogonal to the vertical direction in a process of dicing while pouring cleaning water. This is performed in order to reduce the cost involved in manufacturing a semiconductor device. The tilt angle (θ) is set so as to be no smaller than the angle at which the pooling of the cleaning water blown onto a semiconductor wafer placed on the stage (10) begins to be disrupted.

Description

ダイシング装置及び半導体装置の製造方法Dicing apparatus and semiconductor device manufacturing method
 本発明は、半導体装置の製造に用いられるダイシング装置に関する。 The present invention relates to a dicing apparatus used for manufacturing a semiconductor device.
 半導体装置の製造工程において、半導体ウェハから素子を切り出すために通常、ダイシングを行う。 In the manufacturing process of a semiconductor device, dicing is usually performed to cut out an element from a semiconductor wafer.
 従来のダイシング方法を実現するためのダイシング装置の鳥瞰図を図13に示す。 FIG. 13 shows a bird's-eye view of a dicing apparatus for realizing the conventional dicing method.
 図13に示すダイシング装置では、最初に、装置搬送用のフレームに貼り付けられたダイシングテープの上に半導体ウェハを貼り付け。次に、半導体ウェハが貼付けられたフレームをダイシング装置のステージ上に半導体ウェハ貼付側を上向きに設置した後、ダイシング用ブレードにより、半導体ウェハを所定のダイシングラインに沿って切断する。この時、切削屑除去とダイシング用ブレード及び半導体ウェハの冷却の為、ノズルから洗浄液(以下、洗浄水と称する)を射出しながらダイシング作業を行う。 In the dicing apparatus shown in FIG. 13, first, a semiconductor wafer is affixed on a dicing tape affixed to a frame for conveying the apparatus. Next, after the frame on which the semiconductor wafer is attached is placed on the stage of the dicing apparatus with the semiconductor wafer attachment side facing upward, the semiconductor wafer is cut along a predetermined dicing line by a dicing blade. At this time, a dicing operation is performed while ejecting a cleaning liquid (hereinafter referred to as cleaning water) from the nozzle in order to remove cutting waste and cool the dicing blade and the semiconductor wafer.
 一般的なダイシング装置は、図14に示すように、ダイシング装置ワーキングエリア底面側にステージが設けられ、その上に半導体ウェハを搬送するためのフレームが載置されており、このフレームの載置面に対向する、ダイシング装置ワーキングエリア天面側にダイシングブレードが設けられている。 As shown in FIG. 14, a general dicing apparatus is provided with a stage on the bottom surface side of a dicing apparatus working area, on which a frame for transporting a semiconductor wafer is placed. A dicing blade is provided on the top surface side of the dicing apparatus working area facing the surface.
 通常、図15に示すように、ダイシングブレードの中心軸(ブレード中心軸)の軸方向は、ステージのフレーム載置面に対して平行に設定され、さらに、鉛直方向に直交する基準水平面に対しても平行に設定されている。このため、ダイシング中にノズルから射出される洗浄水が、半導体ウェハ上に溜まりやすくなる。 Normally, as shown in FIG. 15, the axial direction of the central axis (blade central axis) of the dicing blade is set parallel to the frame mounting surface of the stage, and further, with respect to a reference horizontal plane perpendicular to the vertical direction. Are also set in parallel. For this reason, the cleaning water ejected from the nozzle during dicing tends to accumulate on the semiconductor wafer.
 従って、従来のダイシング装置において、洗浄水を射出しながらダイシング作業を行った場合、図16に示すように、半導体ウェハが貼付けられたフレームにおいて、ダイシング部分やウェハ端A、Bから、ダイシングテープと半導体ウェハとの間に洗浄水が浸入し、ダイシングテープの粘着剤と洗浄水が反応し、粘着剤の粘着力が弱まりダイシングテープから半導体ウェハの遊離が生じる虞がある。 Therefore, in the conventional dicing apparatus, when the dicing operation is performed while injecting the cleaning water, as shown in FIG. 16, in the frame to which the semiconductor wafer is attached, the dicing tape and the wafer ends A and B There is a possibility that the cleaning water enters between the semiconductor wafer and the adhesive of the dicing tape and the cleaning water react to weaken the adhesive force of the adhesive and cause the semiconductor wafer to be released from the dicing tape.
 そこで、特許文献1には、半導体ウェハのダイシングテープ貼付面側に、疎水性の膜を形成することで、ダイシングテープから半導体ウェハが遊離するのを防止する半導体装置の製造方法が開示されている。 Therefore, Patent Document 1 discloses a method of manufacturing a semiconductor device that prevents a semiconductor wafer from being separated from a dicing tape by forming a hydrophobic film on the dicing tape application surface side of the semiconductor wafer. .
日本国公開特許公報「特開平10-270387号公報(1998年10月9日公開)」Japanese Patent Publication “Japanese Patent Laid-Open No. 10-270387 (published on Oct. 9, 1998)”
 しかしながら、特許文献1に開示されたように、半導体ウェハのダイシングテープ貼付面側に、疎水性の膜を形成した場合、半導体ウェハに疎水性の膜を形成するための工程と、形成した疎水性の膜を除去するための工程を新たに追加する必要があるので、半導体装置の製造における手間とコストが増加するという問題が生じる。 However, as disclosed in Patent Document 1, when a hydrophobic film is formed on the dicing tape application surface side of the semiconductor wafer, a process for forming the hydrophobic film on the semiconductor wafer, and the formed hydrophobic property Since it is necessary to newly add a process for removing the film, there is a problem that labor and cost in manufacturing the semiconductor device increase.
 しかも、新たに疎水性の膜の形成工程や除去工程を追加すると、加工時に半導体ウェハに余計なストレスもかかる。 In addition, if a hydrophobic film forming process or a removing process is newly added, extra stress is applied to the semiconductor wafer during processing.
 そこで、疎水性の膜として、形成した疎水性の膜を除去せず、そのまま半導体装置として使用することができるシリコン酸化膜を用いることが考えられるが、半導体ウェハの厚みが増して、半導体装置の薄膜化が困難となる。 Therefore, it is conceivable to use a silicon oxide film that can be used as a semiconductor device as it is without removing the formed hydrophobic film as the hydrophobic film. Thinning becomes difficult.
 また、疎水性の膜として、フォトレジスト、樹脂、ゴム材の膜を用いて、半導体ウェハのダイシングテープ貼付面側に形成した場合、同膜の剛性が低い為、ダイシング時に半導体ウェハがブレて、クラックやチッピング等の加工問題が発生する可能性が高い。 Also, as a hydrophobic film, using a film of photoresist, resin, rubber material, when formed on the dicing tape application surface side of the semiconductor wafer, because the rigidity of the film is low, the semiconductor wafer blurs during dicing, There is a high possibility that processing problems such as cracks and chipping will occur.
 従って、従来のダイシング装置によれば、半導体装置の歩留まりを向上させることが難しく、且つ、製造工程も増えるので、半導体装置の製造に係るコストが増加するという問題が生じる。 Therefore, according to the conventional dicing apparatus, it is difficult to improve the yield of the semiconductor device, and the number of manufacturing steps increases, so that the cost for manufacturing the semiconductor device increases.
 本発明は、上記の課題に鑑みなされたものであって、その目的は、新たな工程(疎水性の膜の形成工程、除去工程)を追加することなく、ダイシングテープの粘着剤と半導体ウェハとの間への洗浄水の浸入による、ダイシングテープから半導体ウェハが遊離するのを防止することで、半導体装置の製造に係るコストを低減できるダイシング装置を提供することにある。 The present invention has been made in view of the above problems, and its purpose is to add a dicing tape adhesive and a semiconductor wafer without adding new steps (hydrophobic film forming step and removing step). An object of the present invention is to provide a dicing apparatus capable of reducing the cost for manufacturing a semiconductor device by preventing the semiconductor wafer from being separated from the dicing tape due to the intrusion of cleaning water between the two.
 本発明のダイシング装置は、上記の課題を解決するために、半導体ウェハをダイシングテープの粘着剤による粘着力によって固定載置するステージと、回転の中心軸が前記ステージの半導体ウェハ載置面と平行なダイシングブレードと、上記ダイシングブレードで半導体ウェハをダイシングする際に、ダイシング部位に洗浄液を吹き付ける洗浄液供給機構とを有するダイシング装置であって、少なくともダイシング時に、上記ステージの半導体ウェハ載置面は、鉛直方向に直交する基準水平面から傾斜角を有するように支持され、上記傾斜角は、上記ステージに載置された半導体ウェハ上に吹き付けられた洗浄液の滞留状態が崩れるのを開始する角度以上に設定されていることを特徴としている。 In order to solve the above-described problems, the dicing apparatus of the present invention has a stage on which a semiconductor wafer is fixedly mounted by an adhesive force of a dicing tape adhesive, and a central axis of rotation parallel to the semiconductor wafer mounting surface of the stage. A dicing apparatus having a dicing blade and a cleaning liquid supply mechanism for spraying a cleaning liquid onto a dicing portion when the semiconductor wafer is diced with the dicing blade, and at least during dicing, the semiconductor wafer mounting surface of the stage is vertical. It is supported so as to have an inclination angle from a reference horizontal plane orthogonal to the direction, and the inclination angle is set to an angle at which the retention state of the cleaning liquid sprayed on the semiconductor wafer placed on the stage starts to break down. It is characterized by having.
 本発明の半導体装置の製造方法は、上記の課題を解決するために、ステージ上にダイシングテープの粘着剤による粘着力により固定載置された半導体ウェハに対して洗浄液を拭き付けながらダイシングを行う半導体装置の製造方法であって、上記ステージの半導体ウェハ載置面が、鉛直方向に直交する基準水平面から傾斜角を有するように支持され、上記傾斜角が、上記ステージに載置された半導体ウェハ上に吹き付けられた洗浄液の滞留状態が崩れるのを開始する角度以上に設定されている状態で、上記ダイシングを行うことを特徴としている。 In order to solve the above-described problems, the semiconductor device manufacturing method of the present invention performs dicing while wiping the cleaning liquid on the semiconductor wafer fixedly mounted on the stage by the adhesive force of the adhesive of the dicing tape. A method for manufacturing an apparatus, wherein a semiconductor wafer placement surface of the stage is supported so as to have an inclination angle from a reference horizontal plane perpendicular to the vertical direction, and the inclination angle is on a semiconductor wafer placed on the stage. The dicing is performed in a state where the staying state of the cleaning liquid sprayed on the surface is set to be equal to or larger than an angle at which the cleaning liquid starts to collapse.
 上記構成によれば、少なくともダイシング時に、上記ステージの半導体ウェハ載置面は、鉛直方向に直交する基準水平面から傾斜角を有するように支持され、上記傾斜角は、上記ステージに載置された半導体ウェハ上に吹き付けられた洗浄液の滞留状態が崩れるのを開始する角度以上に設定されていることで、ダイシング中に半導体ウェハ上に吹き付けられる洗浄液は当該半導体ウェハ上から直ぐに流れ落ちることになるので、ダイシング中に半導体ウェハ上に洗浄液が滞留するのを抑制することができる。 According to the above configuration, at least during dicing, the semiconductor wafer placement surface of the stage is supported so as to have an inclination angle from a reference horizontal plane perpendicular to the vertical direction, and the inclination angle is a semiconductor placed on the stage. Since the cleaning liquid sprayed on the wafer is set at an angle greater than the angle at which it starts to break down, the cleaning liquid sprayed on the semiconductor wafer during dicing will immediately flow down from the semiconductor wafer. It is possible to suppress the cleaning liquid from staying on the semiconductor wafer.
 これにより、ダイシング中に、滞留した洗浄液が半導体ウェハのダイシング部位及び端部への洗浄液の浸入を防ぐことができるので、半導体ウェハとダイシングテープの粘着剤との間に洗浄液が浸入しない。 Thereby, the cleaning liquid staying during dicing can prevent the cleaning liquid from entering the dicing part and the end of the semiconductor wafer, so that the cleaning liquid does not enter between the semiconductor wafer and the adhesive of the dicing tape.
 この結果、ダイシングテープの粘着剤と洗浄液とが反応することがないので、粘着剤の粘着力の低下が生じないため、半導体ウェハがダイシングテープから剥がれるのを防ぐことができ、半導体ウェハから切り出された半導体チップの飛び出し(ダイシングテープから剥がれることによる半導体チップの飛び出し)を抑制することができる。 As a result, since the adhesive of the dicing tape does not react with the cleaning liquid, the adhesive force of the adhesive does not decrease, so that the semiconductor wafer can be prevented from being peeled off from the dicing tape and cut out from the semiconductor wafer. Further, the jumping out of the semiconductor chip (the jumping out of the semiconductor chip due to peeling off from the dicing tape) can be suppressed.
 従って、ダイシング中に、半導体ウェハに余計なストレスをかけることなく、当該半導体ウェハから適切に半導体チップを切り出すことができるので、半導体装置の歩留まりを向上させ、この結果、半導体装置のコストを下げることができるという効果を奏する。 Accordingly, since the semiconductor chip can be appropriately cut out from the semiconductor wafer without applying extra stress to the semiconductor wafer during dicing, the yield of the semiconductor device is improved, and as a result, the cost of the semiconductor device is reduced. There is an effect that can be.
 本発明は、ステージ上に載置された半導体ウェハに対して洗浄液を拭き付けながらダイシングを行うダイシング装置であって、上記ステージの半導体ウェハ載置面が、鉛直方向に直交する基準水平面から傾斜角を有するにように保持されると共に、上記傾斜角が、上記ステージに載置された半導体ウェハ上に吹き付けられた洗浄液の滞留状態が崩れるのを開始する角度以上に設定した状態で、上記ダイシングを行うことで、ダイシング中に、半導体ウェハに余計なストレスをかけることなく、当該半導体ウェハから適切に半導体チップを切り出すことができるので、半導体装置の歩留まりを向上させ、この結果、半導体装置のコストを下げることができるという効果を奏する。 The present invention is a dicing apparatus that performs dicing while wiping a cleaning liquid on a semiconductor wafer placed on a stage, wherein the semiconductor wafer placement surface of the stage is inclined from a reference horizontal plane perpendicular to the vertical direction. The dicing is performed in a state where the inclination angle is set to be equal to or larger than an angle at which the staying state of the cleaning liquid sprayed on the semiconductor wafer placed on the stage starts to collapse. By doing so, the semiconductor chip can be appropriately cut out from the semiconductor wafer without applying extra stress to the semiconductor wafer during dicing, so that the yield of the semiconductor device is improved, and as a result, the cost of the semiconductor device is reduced. There is an effect that it can be lowered.
本発明の実施の形態1に係るダイシング装置の概略構成図である。It is a schematic block diagram of the dicing apparatus which concerns on Embodiment 1 of this invention. 半導体ウェハを装置搬送用のフレームに貼り付けた状態を示す概略断面図である。It is a schematic sectional drawing which shows the state which affixed the semiconductor wafer on the flame | frame for apparatus conveyance. 図1に示すダイシング装置の鳥瞰図である。It is a bird's-eye view of the dicing apparatus shown in FIG. 図1に示すダイシング装置による半導体ウェハ切断部の拡大図である。It is an enlarged view of the semiconductor wafer cutting part by the dicing apparatus shown in FIG. 本発明の実施の形態2に係るダイシング装置の概略構成図である。It is a schematic block diagram of the dicing apparatus which concerns on Embodiment 2 of this invention. 図5に示すダイシング装置の鳥瞰図である。It is a bird's-eye view of the dicing apparatus shown in FIG. 図5に示すダイシング装置による半導体ウェハ切断部の拡大図である。It is an enlarged view of the semiconductor wafer cutting part by the dicing apparatus shown in FIG. 本発明の実施の形態3に係るダイシング装置の概略構成図である。It is a schematic block diagram of the dicing apparatus which concerns on Embodiment 3 of this invention. 図8に示すダイシング装置の鳥瞰図である。It is a bird's-eye view of the dicing apparatus shown in FIG. 図8に示すダイシング装置による半導体ウェハ切断部の拡大図である。It is an enlarged view of the semiconductor wafer cutting part by the dicing apparatus shown in FIG. 本発明の実施の形態4に係るダイシング装置の概略構成図である。It is a schematic block diagram of the dicing apparatus which concerns on Embodiment 4 of this invention. 本発明のダイシング装置に適用する冷却機構の概略構成図である。It is a schematic block diagram of the cooling mechanism applied to the dicing apparatus of this invention. 従来のダイシング装置の鳥瞰図である。It is a bird's-eye view of the conventional dicing apparatus. 図13に示すダイシング装置の概略構成図である。It is a schematic block diagram of the dicing apparatus shown in FIG. 図13に示すダイシング装置による半導体ウェハ切断部の拡大図である。It is an enlarged view of the semiconductor wafer cutting part by the dicing apparatus shown in FIG. 半導体ウェハとダイシングテープとの間に洗浄液が侵入するメカニズムを説明するための図である。It is a figure for demonstrating the mechanism in which a washing | cleaning liquid penetrate | invades between a semiconductor wafer and a dicing tape.
 〔実施の形態1〕
 本発明の一実施の形態について説明すれば以下の通りである。
[Embodiment 1]
An embodiment of the present invention will be described as follows.
 (ダイシング装置の概略説明)
 図1は、本実施の形態に係るダイシング装置1の概略構成を示す図である。
(Outline explanation of dicing equipment)
FIG. 1 is a diagram showing a schematic configuration of a dicing apparatus 1 according to the present embodiment.
 上記ダイシング装置1は、図1に示すように、フレーム13を介して被加工物(後述する半導体ウェハ16)を載置するステージ10と、ステージ10上に載置された被加工物を回転により切断するダイシングブレード11と、ダイシングブレード11による被加工物のダイシング部位に洗浄液(以下、洗浄水と称する)を射出するノズル(洗浄液供給機構)12、被加工物を載置して搬送するためのフレーム13、ダイシングブレード11を支持すると共に、ダイシングブレード11に駆動力を伝達するダイシングブレード保持部(駆動機構)14とをワーキングエリア100内に配置して構成されている。 As shown in FIG. 1, the dicing apparatus 1 rotates a stage 10 on which a workpiece (semiconductor wafer 16 to be described later) is placed via a frame 13 and a workpiece placed on the stage 10 by rotation. A dicing blade 11 to be cut, a nozzle (cleaning liquid supply mechanism) 12 for injecting a cleaning liquid (hereinafter referred to as cleaning water) to a dicing portion of the workpiece by the dicing blade 11, and a workpiece for placing and conveying the workpiece A dicing blade holding portion (drive mechanism) 14 that supports the frame 13 and the dicing blade 11 and transmits a driving force to the dicing blade 11 is arranged in the working area 100.
 なお、上記ワーキングエリア100は、ダイシング装置1によってダイシング作業を行うためのワークエリアである。このワーキングエリア100に沿って、ダイシング装置1を構成する各構成要素を支持するための筐体等の構造体が形成されている。 The working area 100 is a work area for performing dicing work by the dicing apparatus 1. A structural body such as a housing for supporting each component constituting the dicing apparatus 1 is formed along the working area 100.
 上記ステージ10は、ワーキングエリア100におけるダイシング装置ワーキングエリア底面側1bに設けられており、フレーム13を載置する載置面10aが鉛直方向に直交する水平面(基準水平面A)から傾斜角θで傾くように設計されている。ここで、ステージ10は、少なくともダイシングブレード11による被加工物のダイシング時に載置面10aが傾斜すればよいので、ダイシング時以外には、載置面10aがダイシング装置ワーキングエリア底面側1bと平行、すなわち基準水平面Aと平行になるように傾斜角θが0°となるようにしてもよい。なお、傾斜角θについての詳細は後述する。 The stage 10 is provided on the bottom surface side 1b of the dicing apparatus working area in the working area 100, and the placement surface 10a on which the frame 13 is placed is inclined at an inclination angle θ from a horizontal plane (reference horizontal plane A) perpendicular to the vertical direction. Designed to be Here, since the stage 10 should just incline the mounting surface 10a at the time of the dicing of the workpiece by the dicing blade 11, the mounting surface 10a is parallel to the bottom surface side 1b of the dicing apparatus working area except during the dicing. That is, the inclination angle θ may be 0 ° so as to be parallel to the reference horizontal plane A. Details of the inclination angle θ will be described later.
 上記ダイシングブレード11は、ワーキングエリア100におけるダイシング装置ワーキングエリア天面側1aに固定されたダイシングブレード保持部14によって支持されている。 The dicing blade 11 is supported by a dicing blade holding portion 14 fixed to the top surface 1a of the dicing apparatus working area in the working area 100.
 上記ダイシングブレード保持部14は、ダイシング装置ワーキングエリア天面側1aに固定された支持バー14aによってダイシングブレード11を支持している。この支持バー14aには、ダイシングブレード11に対して回転の駆動力を伝えるための駆動源が設けられている。例えば、駆動源としてモータを用いて、このモータをダイシングブレード11のブレード中心軸11aに連結して、当該ダイシングブレード11を回転駆動させるようにしてもよい。 The dicing blade holding part 14 supports the dicing blade 11 by a support bar 14a fixed to the top surface 1a of the dicing machine working area. The support bar 14 a is provided with a driving source for transmitting a rotational driving force to the dicing blade 11. For example, a motor may be used as a drive source, and this motor may be connected to the blade center shaft 11a of the dicing blade 11 so that the dicing blade 11 is rotationally driven.
 また、ダイシングブレード保持部14の支持バー14aは、伸縮自在に形成されており、ダイシング時に、ダイシングブレード11が切断対象となる被加工物に接触するように伸びるようになっている。 Further, the support bar 14a of the dicing blade holding part 14 is formed so as to be extendable and contracted so that the dicing blade 11 is brought into contact with a workpiece to be cut during dicing.
 ここで、上記ダイシングブレード11の回転中心であるブレード中心軸11aの軸方向は、ダイシング時に、ステージ10の載置面10aに平行となるように、上記基準水平面に対して傾斜角θで傾斜している。これにより、ダイシング時には、ダイシングブレード11がステージ10に載置された被加工物に対して垂直に当たるようになる。 Here, the axial direction of the blade center axis 11a, which is the rotation center of the dicing blade 11, is inclined at an inclination angle θ with respect to the reference horizontal plane so that it is parallel to the mounting surface 10a of the stage 10 during dicing. ing. Thereby, at the time of dicing, the dicing blade 11 comes into contact with the workpiece placed on the stage 10 perpendicularly.
 上記ノズル12は、ダイシング時において、ダイシングブレード11と被加工物とが接触している切断部分(ダイシング部位)に対して洗浄水(純水)を射出(吹き付け)するために設けられている。これにより、ダイシングブレード11の冷却と、切削屑の除去とを行うようになっている。 The nozzle 12 is provided for injecting (spraying) cleaning water (pure water) onto a cut portion (dicing portion) where the dicing blade 11 and the workpiece are in contact with each other during dicing. Thereby, the dicing blade 11 is cooled and the cutting waste is removed.
 ここで、ノズル12は、洗浄水の射出口が上記切断部分よりも上方に設けられており、当該切断部分に対して上方から下方へ洗浄水を射出する構造となっている。但し、被加工物の載置面の傾き、すなわち上記傾斜角θによっては、切断部分よりも下方に設けられ、当該切断部分に対して下方から上方へ洗浄水を射出する構造としてもよい。 Here, the nozzle 12 has a structure in which a cleaning water injection port is provided above the cutting portion, and the cleaning water is injected from above to the cutting portion. However, depending on the inclination of the mounting surface of the workpiece, that is, the inclination angle θ, the structure may be provided below the cutting portion and injecting the washing water from below to above the cutting portion.
 上記フレーム13は、図2に示すように、全面にダイシングテープ15が設けられ、このダイシングテープ15の上に被加工物である半導体ウェハ16が貼り付けられている。半導体ウェハ16は、ダイシングテープ15の粘着剤の粘着力によりフレーム13に粘着され、結果として、フレーム13に固定されることになる。 As shown in FIG. 2, the frame 13 is provided with a dicing tape 15 on the entire surface, and a semiconductor wafer 16 as a workpiece is attached on the dicing tape 15. The semiconductor wafer 16 is adhered to the frame 13 by the adhesive force of the adhesive of the dicing tape 15, and as a result, is fixed to the frame 13.
 これにより、半導体ウェハ16は、フレーム13を介してステージ10の載置面10aに固定載置されることになる。この状態で、半導体ウェハ16はダイシングブレード11によってダイシングされる。 Thereby, the semiconductor wafer 16 is fixedly placed on the placement surface 10 a of the stage 10 via the frame 13. In this state, the semiconductor wafer 16 is diced by the dicing blade 11.
 (ダイシング)
 図3は、図1に示すダイシング装置1の鳥瞰図である。
(Dicing)
FIG. 3 is a bird's-eye view of the dicing apparatus 1 shown in FIG.
 図3に示すように、ステージ10上に載置されたフレーム13のダイシングテープ15によって固定載置された半導体ウェハ16から、ノズル12によって洗浄水が射出されながら、ダイシングブレード11によって複数のチップが切り出される。 As shown in FIG. 3, a plurality of chips are formed by a dicing blade 11 while cleaning water is ejected by a nozzle 12 from a semiconductor wafer 16 fixedly mounted by a dicing tape 15 of a frame 13 placed on a stage 10. Cut out.
 図4は、半導体ウェハ16の切断部分の拡大図である。 FIG. 4 is an enlarged view of a cut portion of the semiconductor wafer 16.
 図4に示すように、ダイシング中、ステージ10の半導体ウェハ16の載置面10aは、基準水平面Aから傾斜角θ傾いている。ここで、ダイシングブレード11は、半導体ウェハ16に対して垂直に当たる必要があるので、当該ダイシングブレード11のブレード中心軸11aの軸方向は、上記ステージ10の載置面10aと平行になっている。すなわち、ダイシングブレード11も、ステージ10の載置面10aと同様に、基準法線面Bに対して傾斜角θだけ傾いている。 As shown in FIG. 4, during dicing, the mounting surface 10 a of the semiconductor wafer 16 of the stage 10 is inclined from the reference horizontal plane A by the inclination angle θ. Here, since the dicing blade 11 needs to be perpendicular to the semiconductor wafer 16, the axial direction of the blade center axis 11 a of the dicing blade 11 is parallel to the mounting surface 10 a of the stage 10. That is, the dicing blade 11 is also inclined by the inclination angle θ with respect to the reference normal plane B, similarly to the mounting surface 10 a of the stage 10.
 (傾斜角θについて)
 ダイシング時に、洗浄水が半導体ウェハ16上に噴射されるが、図2に示すように、切断対象となる半導体ウェハ16がダイシングテープ15による粘着剤の粘着力によってフレーム13に固定されているので、洗浄水が半導体ウェハ16とダイシングテープ15の粘着剤との間に浸入して、洗浄水と粘着剤とが反応して、粘着剤の粘着力が弱まる虞がある。
(Inclination angle θ)
Although cleaning water is sprayed onto the semiconductor wafer 16 during dicing, as shown in FIG. 2, the semiconductor wafer 16 to be cut is fixed to the frame 13 by the adhesive force of the adhesive by the dicing tape 15. There is a possibility that the cleaning water enters between the semiconductor wafer 16 and the adhesive of the dicing tape 15 and the cleaning water and the adhesive react to weaken the adhesive strength of the adhesive.
 上記の粘着剤接合部分への洗浄水の浸入は、ダイシング中に、半導体ウェハ16の表面に洗浄水が過剰に滞留することに起因しているので、この過剰に滞留している洗浄水を、半導体ウェハ16を傾けて自重により流すことができれば、上記の問題は生じない。この半導体ウェハ16を傾ける手段を、上述したステージ10の載置面10aを傾けることにより実現している。つまり、上述した傾斜角θを適切に設定することにより、洗浄水の半導体ウェハ16上への滞留をなくして、洗浄水が粘着剤接合部分に浸入することを防止し、粘着剤の粘着力が弱まるのを抑制することが可能となる。 The intrusion of the cleaning water into the adhesive bonding portion is caused by the excessive retention of cleaning water on the surface of the semiconductor wafer 16 during dicing. If the semiconductor wafer 16 can be inclined and flowed by its own weight, the above problem does not occur. The means for tilting the semiconductor wafer 16 is realized by tilting the mounting surface 10a of the stage 10 described above. That is, by appropriately setting the above-described inclination angle θ, it is possible to prevent the cleaning water from staying on the semiconductor wafer 16 and prevent the cleaning water from entering the adhesive bonding portion, and the adhesive strength of the adhesive can be reduced. It becomes possible to suppress weakening.
 ここで、図1に示すダイシング装置1において、傾斜角θと洗浄水の流れ具合との関係を調べた結果を表1に示す。 Here, in the dicing apparatus 1 shown in FIG. 1, Table 1 shows the results of examining the relationship between the inclination angle θ and the flow of cleaning water.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
 表1は、図1に示すダイシング装置1において、ダイシング中に、ノズル12から射出される洗浄水としての純水を、半導体ウェハ16の切断部分に対して、射出量を100ml/分とした場合に得られた結果を示している。 Table 1 shows a case in which, in the dicing apparatus 1 shown in FIG. 1, pure water as cleaning water ejected from the nozzles 12 during dicing is injected to the cut portion of the semiconductor wafer 16 at 100 ml / min. Shows the results obtained.
 従って、傾斜角θは、10°未満では洗浄水が半導体ウェハ16上に滞留した状態となり、好ましくなく、10°では、半導体ウェハ16上の洗浄水の滞留状態が崩れて、半導体ウェハ16上から少しずつ流れる。 Therefore, if the inclination angle θ is less than 10 °, the cleaning water stays on the semiconductor wafer 16 and is not preferable. If the inclination angle θ is 10 °, the staying state of the cleaning water on the semiconductor wafer 16 collapses and the cleaning water stays on the semiconductor wafer 16. It flows little by little.
 なお、傾斜角θが15°の場合であっても、よどみがあるものの、ゆっくりと洗浄水が流れ落ちるが、好ましくは、傾斜角θが20°以上であれば、半導体ウェハ16の洗浄水がほぼ完全に流れ落ちる。 Even when the inclination angle θ is 15 °, the stagnation is slow, but the cleaning water slowly flows down. Preferably, when the inclination angle θ is 20 ° or more, the cleaning water for the semiconductor wafer 16 is almost equal. It runs down completely.
 以上のことから、傾斜角θは、10°以上であれば、半導体ウェハ16上の洗浄水の滞留状態が崩れて、洗浄水が流れ出すことが分かる。つまり、傾斜角θは、10°以上であれば、洗浄水が粘着剤接合部分に浸入することを防止し、粘着剤の粘着力が弱まるのを抑制することが可能となる。 From the above, it can be seen that if the inclination angle θ is 10 ° or more, the staying state of the cleaning water on the semiconductor wafer 16 collapses and the cleaning water flows out. That is, if the inclination angle θ is 10 ° or more, it becomes possible to prevent the cleaning water from entering the adhesive bonding portion and to suppress the adhesive force of the adhesive from weakening.
 また、傾斜角θは、20°以上であれば、半導体ウェハ16の洗浄水がほぼ完全に流れ落ちることになるので、より効果的であることが分かる。 In addition, it can be seen that if the inclination angle θ is 20 ° or more, the cleaning water for the semiconductor wafer 16 will flow almost completely, which is more effective.
 このように、傾斜角θは、大きければ大きいほど、洗浄水が粘着剤接合部分に浸入することを防止する効果は高くなるが、傾斜角θが90°を越えれば、ダイシング装置1におけるステージ10、ダイシングブレード11、ノズル12の配設位置を大幅に変更する必要がある。傾斜角θが90°の場合については、後述の実施の形態2で詳細に説明する。また、傾斜角θが180°の場合には、さらに、ダイシング装置1の構造を変更する必要がある。この傾斜角θが180°の場合については、後述の実施の形態3、4で詳細に説明する。 As described above, the larger the inclination angle θ, the higher the effect of preventing the cleaning water from entering the adhesive bonding portion. However, if the inclination angle θ exceeds 90 °, the stage 10 in the dicing apparatus 1 is increased. The arrangement positions of the dicing blade 11 and the nozzle 12 need to be significantly changed. The case where the inclination angle θ is 90 ° will be described in detail in a second embodiment described later. When the inclination angle θ is 180 °, the structure of the dicing apparatus 1 needs to be further changed. The case where the inclination angle θ is 180 ° will be described in detail in Embodiments 3 and 4 described later.
 (傾斜角θの洗浄水の粘性による影響)
 洗浄液として純水を使用した場合、傾斜角θには、洗浄水の粘性の影響はほとんどない。すなわち、ダイシング装置1は、通常、温湿管理されたクリーンルーム内に設置される為、温度変化は僅かであり、洗浄水の粘性が大きく変化する事は考え難いことから、洗浄水の粘性は傾斜角に影響を与え難いと考えられる。仮に温度変化により洗浄水の粘性が厳密には高くなったとしても、誤差の範囲であり傾斜角θに影響を与え難いと考えられる。
(Effect of inclination angle θ due to viscosity of washing water)
When pure water is used as the cleaning liquid, the inclination angle θ has almost no influence of the viscosity of the cleaning water. That is, since the dicing apparatus 1 is usually installed in a clean room that is temperature and humidity controlled, the temperature change is slight, and it is unlikely that the viscosity of the wash water will change greatly. It seems difficult to affect the corners. Even if the viscosity of the cleaning water is strictly increased due to a temperature change, it is considered that it is within an error range and hardly affects the inclination angle θ.
 (傾斜角θの洗浄水の射出量(=射出速度)による影響)
 洗浄水の射出量による傾斜角θへの影響も、上記粘性と同様にほとんどないと考えられる。洗浄水の射出量と最少傾斜角の関係を表2に示す。
(Effect of cleaning water injection amount (= injection speed) with inclination angle θ)
It is considered that there is almost no influence on the inclination angle θ due to the injection amount of the washing water, like the above viscosity. Table 2 shows the relationship between the washing water injection amount and the minimum inclination angle.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
 表2において、No.1の試験条件では、射出量が100ml/分のときの最小傾斜角が10°であることを示し、No.2の試験条件では、射出量が300ml/分のときの最小傾斜角が8°であることを示している。ここで、最小傾斜角とは、洗浄水が半導体ウェハ16の表面に滞留しない最小の傾斜角θとする。 In Table 2, No. 1 indicates that the minimum inclination angle is 10 ° when the injection amount is 100 ml / min. The test condition of 2 indicates that the minimum inclination angle is 8 ° when the injection amount is 300 ml / min. Here, the minimum inclination angle is the minimum inclination angle θ at which the cleaning water does not stay on the surface of the semiconductor wafer 16.
 表2の情報を補足すると、洗浄水の射出量が毎分300ml以上かつ傾斜角θが8°の場合、洗浄水の射出量が毎分100mlかつ傾斜角θが10°のときと比較して、半導体ウェハ16の表面全体への洗浄水の拡がり具合は大きくなるが、重力方向への洗浄水の流れ方には大差がない。 Supplementing the information in Table 2, when the injection amount of cleaning water is 300 ml / min or more and the inclination angle θ is 8 °, compared to when the injection amount of cleaning water is 100 ml / min and the inclination angle θ is 10 °. The extent of the cleaning water spreading to the entire surface of the semiconductor wafer 16 increases, but there is no great difference in the way the cleaning water flows in the direction of gravity.
 洗浄水の射出量が毎分300ml以上では、傾斜角θが少なくとも8°以上であれば、洗浄水は半導体ウェハ16の表面に滞留せず、洗浄水の自重により、重力方向へ自然に流れ、洗浄水の射出量が毎分100mlでは、傾斜角θが少なくとも10°以上であれば、洗浄水は半導体ウェハ16の表面に滞留せず、洗浄水の自重により、重力方向へ自然に流れるので、洗浄水の射出量を変えても、洗浄水が自重により、重力方向へ自然に流れ落ちるための傾斜角θの大きさは殆ど変わらないことが分かる。 When the injection amount of cleaning water is 300 ml or more per minute, if the inclination angle θ is at least 8 ° or more, the cleaning water does not stay on the surface of the semiconductor wafer 16 and naturally flows in the direction of gravity due to its own weight, If the injection amount of cleaning water is 100 ml per minute, if the inclination angle θ is at least 10 ° or more, the cleaning water does not stay on the surface of the semiconductor wafer 16 and flows naturally in the direction of gravity due to the weight of the cleaning water. It can be seen that even when the injection amount of the cleaning water is changed, the inclination angle θ for allowing the cleaning water to flow down naturally in the direction of gravity due to its own weight hardly changes.
 従って、洗浄水の射出量による傾斜角θへの影響も、上述した洗浄水の粘性の場合と同様にほとんどないことになる。 Therefore, there is almost no influence on the inclination angle θ due to the injection amount of the washing water as in the case of the viscosity of the washing water described above.
 なお、洗浄水の射出量が100ml/分であるNo.1の試験条件は、通常実施し得ない最低レベルの射出量であるので、傾斜角θの下限値は10°とするのが妥当である。 It should be noted that the injection amount of washing water is 100 ml / min. Since the test condition No. 1 is the lowest level of injection amount that cannot normally be performed, it is appropriate that the lower limit value of the inclination angle θ is 10 °.
 但し、洗浄液が純水の場合には、傾斜角θの下限値は10°であると言えるが、純水以外の洗浄液の場合には、上記傾斜角θの下限値は10°に限定されるものではなく、例えば、半導体ウェハ上の洗浄液の滞留状態が崩れるのを開始する傾斜角を傾斜角θの下限値とすればよい。 However, when the cleaning liquid is pure water, it can be said that the lower limit value of the inclination angle θ is 10 °. However, in the case of a cleaning liquid other than pure water, the lower limit value of the inclination angle θ is limited to 10 °. For example, the inclination angle at which the retention state of the cleaning liquid on the semiconductor wafer starts to collapse may be set as the lower limit value of the inclination angle θ.
 (実施の形態1による効果)
 上記構成のダイシング装置1によれば、ノズル12からの洗浄水を射出しながら行うダイシング時に、ステージ10の載置面10aの傾斜角θが、半導体ウェハ16上の洗浄水の滞留状態が崩れるのを開始する傾斜角よりも大きく設定されているので、半導体ウェハ16上に洗浄水が滞留することがない。
(Effects of Embodiment 1)
According to the dicing apparatus 1 having the above-described configuration, the staying state of the cleaning water on the semiconductor wafer 16 collapses due to the inclination angle θ of the mounting surface 10a of the stage 10 during dicing performed while injecting the cleaning water from the nozzle 12. Therefore, the cleaning water does not stay on the semiconductor wafer 16.
 これにより、半導体ウェハ16のダイシング部位及び端部から、半導体ウェハ16とダイシングテープ15の粘着剤との間に洗浄水が浸入することを防ぐことができるので、ダイシングテープ15の粘着剤と洗浄水とが反応して粘着剤の粘着力が低下することによる半導体ウェハ16のダイシングテープ15からの剥がれを無くすことができ、半導体ウェハ16から切り出された半導体チップの飛び出し(ダイシングテープ15から剥がれることによる半導体チップの飛び出し)を抑制することができる。 Thereby, since it is possible to prevent the cleaning water from entering between the semiconductor wafer 16 and the adhesive of the dicing tape 15 from the dicing part and the end of the semiconductor wafer 16, the adhesive and the cleaning water of the dicing tape 15 can be prevented. Can be removed from the dicing tape 15 due to a decrease in the adhesive strength of the adhesive, and the semiconductor chip cut out from the semiconductor wafer 16 can be ejected (by peeling from the dicing tape 15). Jumping out of the semiconductor chip can be suppressed.
 従って、半導体ウェハ16に対してストレスを与えることなく、また、加工時の手間をかけることなく、ダイシングを効果的に行うことができるので、半導体ウェハ16から切り出される半導体チップの歩留まりを高めて、半導体装置の製造にかかるコストを低減できるという効果を奏する。 Accordingly, dicing can be performed effectively without giving stress to the semiconductor wafer 16 and without taking the trouble of processing, so that the yield of semiconductor chips cut out from the semiconductor wafer 16 can be increased, There is an effect that the cost for manufacturing the semiconductor device can be reduced.
 〔実施の形態2〕
 本発明の他の実施の形態について説明すれば、以下の通りである。
[Embodiment 2]
Another embodiment of the present invention will be described as follows.
 (ダイシング装置の概略説明)
 図5は、本実施の形態に係るダイシング装置2の概略構成を示す図である。
(Outline explanation of dicing equipment)
FIG. 5 is a diagram showing a schematic configuration of the dicing apparatus 2 according to the present embodiment.
 上記ダイシング装置2は、図5に示すように、フレーム23を介して被加工物(後述する半導体ウェハ26)を載置するステージ20と、ステージ20上に載置された被加工物を回転により切断するダイシングブレード21と、ダイシングブレード21による被加工物のダイシング部位に洗浄液(以下、洗浄水と称する)を射出するノズル(洗浄液供給機構)22、被加工物を載置して搬送するためのフレーム23、ダイシングブレード21を支持すると共に、ダイシングブレード21に駆動力を伝達するダイシングブレード保持部(駆動機構)24とをワーキングエリア200内に配置して構成されている。 As shown in FIG. 5, the dicing apparatus 2 rotates a stage 20 on which a workpiece (semiconductor wafer 26 described later) is placed via a frame 23 and a workpiece placed on the stage 20 by rotation. A dicing blade 21 to be cut, a nozzle (cleaning liquid supply mechanism) 22 for injecting a cleaning liquid (hereinafter referred to as cleaning water) to a dicing portion of the workpiece by the dicing blade 21, and a workpiece for placing and conveying the workpiece A dicing blade holding portion (drive mechanism) 24 that supports the frame 23 and the dicing blade 21 and transmits a driving force to the dicing blade 21 is arranged in the working area 200.
 なお、上記ワーキングエリア200は、ダイシング装置2によってダイシング作業を行うためのワークエリアである。このワーキングエリア200に沿って、ダイシング装置2を構成する各構成要素を支持するための筐体等の構造体が形成されている。 The working area 200 is a work area for performing dicing work by the dicing apparatus 2. A structural body such as a housing for supporting each component constituting the dicing apparatus 2 is formed along the working area 200.
 上記ステージ20は、ワーキングエリア200におけるダイシング装置ワーキングエリア左側面側2bに設けられており、フレーム23を載置する載置面20aが鉛直方向に直交する水平面(基準水平面A)から傾斜して傾斜角θ=90°となるように設計されている。 The stage 20 is provided on the left side 2b of the dicing apparatus working area in the working area 200, and the placement surface 20a on which the frame 23 is placed is inclined with respect to a horizontal plane (reference horizontal plane A) perpendicular to the vertical direction. The angle θ is designed to be 90 °.
 上記ダイシングブレード21は、ワーキングエリア200におけるダイシング装置ワーキングエリア右側面側2aに固定されたダイシングブレード保持部24によって支持されている。 The dicing blade 21 is supported by a dicing blade holding part 24 fixed to the right side 2a of the dicing apparatus working area in the working area 200.
 上記ダイシングブレード保持部24は、ダイシング装置ワーキングエリア右側面側2aに固定された支持バー24aによってダイシングブレード21を支持している。この支持バー24aには、ダイシングブレード21に対して回転の駆動力を伝えるための駆動源が設けられている。例えば、駆動源としてモータを用いて、このモータをダイシングブレード21のブレード中心軸21aに連結して、当該ダイシングブレード21を回転駆動させるようにしてもよい。 The dicing blade holding part 24 supports the dicing blade 21 by a support bar 24a fixed to the right side 2a of the dicing machine working area. The support bar 24 a is provided with a driving source for transmitting a rotational driving force to the dicing blade 21. For example, a motor may be used as a drive source, and this motor may be connected to the blade center shaft 21a of the dicing blade 21 so that the dicing blade 21 is rotationally driven.
 また、ダイシングブレード保持部24の支持バー24aは、伸縮自在に形成されており、ダイシング時に、ダイシングブレード21が切断対象となる被加工物に接触するように伸びるようになっている。 Further, the support bar 24a of the dicing blade holding part 24 is formed to be extendable and contracted so that the dicing blade 21 is brought into contact with the workpiece to be cut during dicing.
 ここで、上記ダイシングブレード21の回転中心であるブレード中心軸21aの軸方向は、ダイシング時に、ステージ20の載置面20aに平行となるように、上記基準水平面に対して傾斜角θ=90°で傾斜している。これにより、ダイシング時には、ダイシングブレード21がステージ20に載置された被加工物に対して垂直に当たるようになる。 Here, the tilt angle θ = 90 ° with respect to the reference horizontal plane so that the axial direction of the blade center axis 21a, which is the center of rotation of the dicing blade 21, is parallel to the placement surface 20a of the stage 20 during dicing. It is inclined at. Thereby, at the time of dicing, the dicing blade 21 comes into contact with the workpiece placed on the stage 20 perpendicularly.
 上記ノズル22は、ダイシング時において、ダイシングブレード21と被加工物とが接触している切断部分(ダイシング部位)に対して洗浄水(純水)を射出するために設けられている。これにより、ダイシングブレード21の冷却と、切削屑の除去とを行うようになっている。 The nozzle 22 is provided to inject cleaning water (pure water) to a cut portion (dicing portion) where the dicing blade 21 and the workpiece are in contact with each other during dicing. Thereby, the dicing blade 21 is cooled and the cutting waste is removed.
 ここで、ノズル22は、洗浄水の射出口が上記切断部分よりも上方に設けられており、当該切断部分に対して上方から下方へ洗浄水を射出する構造となっている。 Here, the nozzle 22 has a structure in which a cleaning water injection port is provided above the cutting portion, and the cleaning water is injected from above to below the cutting portion.
 上記フレーム23は、前記実施の形態1と同様に、全面にダイシングテープ25が設けられ、このダイシングテープ25の上に被加工物である半導体ウェハ26が貼り付けられている。半導体ウェハ26は、ダイシングテープ25の粘着剤の粘着力によりフレーム23に粘着され、結果として、フレーム23に固定されていることになる。 As in the first embodiment, the frame 23 is provided with a dicing tape 25 on the entire surface, and a semiconductor wafer 26 as a workpiece is attached on the dicing tape 25. The semiconductor wafer 26 is adhered to the frame 23 by the adhesive force of the adhesive of the dicing tape 25, and as a result, is fixed to the frame 23.
 これにより、半導体ウェハ26は、フレーム23を介してステージ20の載置面20aに固定載置されることになる。この状態で、半導体ウェハ26はダイシングブレード21によってダイシングされる。 Thereby, the semiconductor wafer 26 is fixedly mounted on the mounting surface 20 a of the stage 20 through the frame 23. In this state, the semiconductor wafer 26 is diced by the dicing blade 21.
 (ダイシング)
 図6は、図5に示すダイシング装置2の鳥瞰図である。
(Dicing)
6 is a bird's-eye view of the dicing apparatus 2 shown in FIG.
 図6に示すように、ステージ20上に載置されたフレーム23のダイシングテープ25によって接着された半導体ウェハ26から、ノズル22によって洗浄水が射出されながら、ダイシングブレード21によって複数のチップが切り出される。 As shown in FIG. 6, a plurality of chips are cut out by a dicing blade 21 while cleaning water is ejected by a nozzle 22 from a semiconductor wafer 26 bonded by a dicing tape 25 of a frame 23 placed on a stage 20. .
 図7は、半導体ウェハ26の切断部分の拡大図である。 FIG. 7 is an enlarged view of a cut portion of the semiconductor wafer 26.
 図7に示すように、ダイシング中、ステージ20の半導体ウェハ26の載置面20aは、基準水平面Aから傾斜角θ=90°傾いている。つまり、ステージ20の半導体ウェハ26の載置面20aは、基準法線面Bと平行になっている。ここで、ダイシングブレード21は、半導体ウェハ26に対して垂直に当たる必要があるので、当該ダイシングブレード21のブレード中心軸21aの軸方向は、上記ステージ20の載置面20aと平行になっている。すなわち、ダイシングブレード21も、ステージ20の載置面20aと同様に、基準水平面に対して傾斜角θ=90°だけ傾いている。つまり、ダイシングブレード21も、基準法線面Bと平行になっている。 As shown in FIG. 7, during dicing, the mounting surface 20 a of the semiconductor wafer 26 of the stage 20 is inclined with respect to the reference horizontal plane A by an inclination angle θ = 90 °. That is, the mounting surface 20 a of the semiconductor wafer 26 of the stage 20 is parallel to the reference normal plane B. Here, since the dicing blade 21 needs to hit the semiconductor wafer 26 perpendicularly, the axial direction of the blade center axis 21 a of the dicing blade 21 is parallel to the mounting surface 20 a of the stage 20. That is, the dicing blade 21 is also inclined by the inclination angle θ = 90 ° with respect to the reference horizontal plane, similarly to the mounting surface 20a of the stage 20. That is, the dicing blade 21 is also parallel to the reference normal plane B.
 (実施の形態2による効果)
 本実施の形態に係るダイシング装置2においても、前記実施の形態1に係るダイシング装置1による効果と同様の効果を奏する。
(Effects of Embodiment 2)
Also in the dicing apparatus 2 according to the present embodiment, the same effects as those obtained by the dicing apparatus 1 according to the first embodiment can be obtained.
 さらに、本実施の形態に係るダイシング装置2は、ノズル22からの洗浄水を射出しながら行うダイシング時に、ステージ20の載置面20aの傾斜角θが90°に設定されているので、洗浄水の自重落下方向と重力方向とが合致し、さらに、半導体ウェハ26上での表面張力による滞留が少ないため、最も効率よく洗浄水が流れ落ちることになる。 Furthermore, in the dicing apparatus 2 according to the present embodiment, since the inclination angle θ of the mounting surface 20a of the stage 20 is set to 90 ° during dicing while injecting the cleaning water from the nozzle 22, the cleaning water The gravity drop direction matches the gravity direction, and the retention due to the surface tension on the semiconductor wafer 26 is small, so that the cleaning water flows most efficiently.
 これにより、半導体ウェハ26のダイシング部位及び端部から、半導体ウェハ26とダイシングテープ25の粘着剤との間に洗浄水が浸入することを防ぐことができるので、ダイシングテープ25の粘着剤と洗浄水とが反応して粘着剤の粘着力が低下することによる半導体ウェハ26のダイシングテープ25からの剥がれを確実に無くすことができ、半導体ウェハ26から切り出された半導体チップの飛び出し(ダイシングテープ25から剥がれることによる半導体チップの飛び出し)を抑制することができる。 Thereby, since it is possible to prevent the cleaning water from entering between the semiconductor wafer 26 and the adhesive of the dicing tape 25 from the dicing part and the end of the semiconductor wafer 26, the adhesive of the dicing tape 25 and the cleaning water. , And the adhesive strength of the adhesive is reduced, so that peeling of the semiconductor wafer 26 from the dicing tape 25 can be surely eliminated, and the semiconductor chip cut out from the semiconductor wafer 26 is released (peeled from the dicing tape 25). The jumping of the semiconductor chip due to this can be suppressed.
 従って、半導体ウェハ26に対してストレスを与えることなく、また、加工時の手間をかけることなく、ダイシングを効果的に行うことができるので、半導体ウェハ26から切り出される半導体チップの歩留まりを高めて、半導体装置の製造にかかるコストを低減できるという効果を奏する。 Therefore, dicing can be performed effectively without giving stress to the semiconductor wafer 26 and without taking the trouble of processing, so that the yield of semiconductor chips cut out from the semiconductor wafer 26 can be increased, There is an effect that the cost for manufacturing the semiconductor device can be reduced.
 なお、本実施の形態では、傾斜角θ=90°の場合について説明したが、図5に示すダイシング装置2では、ステージ20が基準法線面Bに平行なダイシング装置ワーキングエリア左側面側2bに設けられているので、ステージ20の載置面20aの傾斜角θが、90°からずれて、80°や100°となっても、傾斜角θが90°の場合ほどではないが、洗浄水の自重落下方向と重力方向とがほぼ合致し、さらに、半導体ウェハ26上での表面張力による滞留が少ないため、効率よく洗浄水が流れ落ちることになる。 In the present embodiment, the case where the inclination angle θ is 90 ° has been described. However, in the dicing apparatus 2 shown in FIG. 5, the stage 20 is located on the left side 2b of the dicing apparatus working area parallel to the reference normal plane B. Even if the inclination angle θ of the mounting surface 20a of the stage 20 deviates from 90 ° and becomes 80 ° or 100 °, the cleaning water is not as much as when the inclination angle θ is 90 °. The gravity drop direction and the gravity direction substantially coincide with each other, and the retention due to the surface tension on the semiconductor wafer 26 is small, so that the cleaning water efficiently flows down.
 但し、傾斜角θが90°よりも大きく上記の100°よりもかなり大きくなれば、ダイシング装置2での対応(ステージ20の載置面20aの傾きの対応)だけでは不十分であり、後述する実施の形態3に開示されたように、ステージを天井面側に設ける必要がある。 However, if the inclination angle θ is larger than 90 ° and considerably larger than the above 100 °, the correspondence with the dicing apparatus 2 (corresponding to the inclination of the mounting surface 20a of the stage 20) is not sufficient, which will be described later. As disclosed in the third embodiment, the stage needs to be provided on the ceiling surface side.
 〔実施の形態3〕
 本発明の他の実施の形態について説明すれば、以下の通りである。
[Embodiment 3]
Another embodiment of the present invention will be described as follows.
 (ダイシング装置の概略説明)
 図8は、本実施の形態に係るダイシング装置3の概略構成を示す図である。
(Outline explanation of dicing equipment)
FIG. 8 is a diagram showing a schematic configuration of the dicing apparatus 3 according to the present embodiment.
 上記ダイシング装置3は、図8に示すように、フレーム33を介して被加工物(後述する半導体ウェハ36)を載置するステージ30と、ステージ30上に載置された被加工物を回転により切断するダイシングブレード31と、ダイシングブレード31による被加工物のダイシング部位に洗浄液(以下、洗浄水と称する)を射出するノズル(洗浄液供給機構)32、被加工物を載置して搬送するためのフレーム33、ダイシングブレード31を支持すると共に、ダイシングブレード31に駆動力を伝達するダイシングブレード保持部(駆動機構)34とをワーキングエリア300内に配置して構成されている。 As shown in FIG. 8, the dicing apparatus 3 rotates a stage 30 on which a workpiece (semiconductor wafer 36 described later) is placed via a frame 33, and a workpiece placed on the stage 30 by rotation. A dicing blade 31 to be cut, a nozzle (cleaning liquid supply mechanism) 32 for injecting a cleaning liquid (hereinafter referred to as cleaning water) to a dicing portion of the workpiece by the dicing blade 31, and a workpiece to be placed and conveyed A dicing blade holding portion (drive mechanism) 34 that supports the frame 33 and the dicing blade 31 and transmits a driving force to the dicing blade 31 is arranged in the working area 300.
 なお、上記ワーキングエリア300は、ダイシング装置3によってダイシング作業を行うためのワークエリアである。このワーキングエリア300に沿って、ダイシング装置3を構成する各構成要素を支持するための筐体等の構造体が形成されている。 The working area 300 is a work area for performing dicing work by the dicing apparatus 3. A structural body such as a housing for supporting each component constituting the dicing apparatus 3 is formed along the working area 300.
 ここで、上記構成の上記ダイシング装置3は、前記実施の形態1の図1に示したダイシング装置1と上下逆の構造となっている。すなわち、上記ステージ30は、ワーキングエリア300におけるダイシング装置ワーキングエリア天面側3aに設けられており、フレーム33を載置する載置面30aが鉛直方向に直交する水平面(基準水平面A)と平行、すなわち傾斜角θ=180°になるように設計されている。 Here, the dicing apparatus 3 having the above-described configuration has an upside down structure with respect to the dicing apparatus 1 shown in FIG. 1 of the first embodiment. That is, the stage 30 is provided on the top surface side 3a of the dicing apparatus working area in the working area 300, and the mounting surface 30a on which the frame 33 is mounted is parallel to a horizontal plane (reference horizontal plane A) perpendicular to the vertical direction. That is, it is designed so that the inclination angle θ = 180 °.
 上記ダイシングブレード31は、ワーキングエリア300におけるダイシング装置ワーキングエリア底面側3bに固定されたダイシングブレード保持部34によって支持されている。 The dicing blade 31 is supported by a dicing blade holding portion 34 fixed to the bottom surface side 3b of the dicing apparatus working area in the working area 300.
 上記ダイシングブレード保持部34は、ダイシング装置ワーキングエリア底面側3bに固定された支持バー34aによってダイシングブレード31を支持している。この支持バー34aには、ダイシングブレード31に対して回転の駆動力を伝えるための駆動源が設けられている。例えば、駆動源としてモータを用いて、このモータをダイシングブレード31のブレード中心軸31aに連結して、当該ダイシングブレード31を回転駆動させるようにしてもよい。 The dicing blade holding part 34 supports the dicing blade 31 by a support bar 34a fixed to the bottom surface side 3b of the dicing apparatus working area. The support bar 34 a is provided with a driving source for transmitting a rotational driving force to the dicing blade 31. For example, a motor may be used as a drive source, and this motor may be connected to the blade center shaft 31a of the dicing blade 31 so that the dicing blade 31 is rotationally driven.
 また、ダイシングブレード保持部34の支持バー34aは、伸縮自在に形成されており、ダイシング時に、ダイシングブレード31が切断対象となる被加工物に接触するように伸びるようになっている。 Further, the support bar 34a of the dicing blade holding part 34 is formed so as to be extendable and contracted so that the dicing blade 31 is brought into contact with the workpiece to be cut during dicing.
 ここで、上記ダイシングブレード31の回転中心であるブレード中心軸31aの軸方向は、ダイシング時に、ステージ30の載置面30aに平行となるように、上記基準水平面Aに平行となっている。これにより、ダイシング時には、ダイシングブレード31がステージ30に載置された被加工物に対して垂直に当たるようになる。 Here, the axial direction of the blade center axis 31a which is the rotation center of the dicing blade 31 is parallel to the reference horizontal plane A so as to be parallel to the mounting surface 30a of the stage 30 during dicing. Thereby, at the time of dicing, the dicing blade 31 comes into contact with the workpiece placed on the stage 30 perpendicularly.
 上記ノズル32は、ダイシング時において、ダイシングブレード31と被加工物とが接触している切断部分(ダイシング部位)に対して洗浄水(純水)を射出するために設けられている。これにより、ダイシングブレード31の冷却と、切削屑の除去とを行うようになっている。 The nozzle 32 is provided to inject cleaning water (pure water) to a cut portion (dicing portion) where the dicing blade 31 and the workpiece are in contact with each other during dicing. Thereby, the dicing blade 31 is cooled and the cutting waste is removed.
 ここで、ノズル32は、洗浄水の射出口が上記切断部分よりも下方に設けられており、当該切断部分に対して下方から上方へ洗浄水を射出する構造となっている。 Here, the nozzle 32 has a structure in which a cleaning water injection port is provided below the cutting portion, and the cleaning water is injected from below to above the cutting portion.
 上記フレーム33は、前記実施の形態1と同様に、全面にダイシングテープ35が設けられ、このダイシングテープ35の上に被加工物である半導体ウェハ36が貼り付けられている。半導体ウェハ36は、ダイシングテープ35の粘着剤によりフレーム33に粘着され、結果として、フレーム33に固定されていることになる。 As in the first embodiment, the frame 33 is provided with a dicing tape 35 on the entire surface, and a semiconductor wafer 36 as a workpiece is attached on the dicing tape 35. The semiconductor wafer 36 is adhered to the frame 33 by the adhesive of the dicing tape 35, and as a result, is fixed to the frame 33.
 これにより、半導体ウェハ36は、フレーム33を介してステージ30の載置面30aに固定載置されることになる。この状態で、半導体ウェハ36はダイシングブレード31によってダイシングされる。 Thereby, the semiconductor wafer 36 is fixedly placed on the placement surface 30 a of the stage 30 through the frame 33. In this state, the semiconductor wafer 36 is diced by the dicing blade 31.
 (ダイシング)
 図9は、図8に示すダイシング装置3の鳥瞰図である。
(Dicing)
FIG. 9 is a bird's-eye view of the dicing apparatus 3 shown in FIG.
 図9に示すように、ステージ30上に載置されたフレーム33のダイシングテープ35によって接着された半導体ウェハ36から、ノズル32によって洗浄水が射出されながら、ダイシングブレード31によって複数のチップが切り出される。 As shown in FIG. 9, a plurality of chips are cut out by a dicing blade 31 while cleaning water is ejected by a nozzle 32 from a semiconductor wafer 36 bonded by a dicing tape 35 of a frame 33 placed on a stage 30. .
 図10は、半導体ウェハ36の切断部分の拡大図である。 FIG. 10 is an enlarged view of a cut portion of the semiconductor wafer 36.
 図10に示すように、ダイシング中、ステージ30の半導体ウェハ36の載置面30aは、基準水平面Aに平行であり、且つ、下方に向いて設けられている。ここで、ダイシングブレード31は、半導体ウェハ36に対して下方から垂直に当たる必要があるので、当該ダイシングブレード31のブレード中心軸31aの軸方向は、上記ステージ30の載置面30aと平行になっている。 As shown in FIG. 10, during the dicing, the mounting surface 30a of the semiconductor wafer 36 of the stage 30 is parallel to the reference horizontal plane A and is directed downward. Here, since the dicing blade 31 needs to hit the semiconductor wafer 36 vertically from below, the axial direction of the blade center axis 31a of the dicing blade 31 is parallel to the mounting surface 30a of the stage 30. Yes.
 図10に示すように、ダイシングブレード31を下方から半導体ウェハ36に対して当て、且つ、下方から上方に向かってノズル32から洗浄水を射出するようになるので、半導体ウェハ36に当たった洗浄水は自重及び重力により直ぐに落下する。 As shown in FIG. 10, since the dicing blade 31 is applied to the semiconductor wafer 36 from below and the cleaning water is ejected from the nozzle 32 from below to above, the cleaning water that has hit the semiconductor wafer 36 is obtained. Falls immediately due to its own weight and gravity.
 (実施の形態3による効果)
 本実施の形態に係るダイシング装置3においても、前記実施の形態2に係るダイシング装置2による効果と同様の効果を奏する。
(Effects of Embodiment 3)
Also in the dicing apparatus 3 according to the present embodiment, the same effects as those obtained by the dicing apparatus 2 according to the second embodiment are obtained.
 さらに、本実施の形態に係るダイシング装置3は、ノズル32からの洗浄水を射出しながら行うダイシング時に、ステージ30の載置面30aの傾斜角θが180°に設定されているので、洗浄水の自重落下方向と重力方向とが合致し、効率よく洗浄水が流れ落ちることになる。 Furthermore, in the dicing apparatus 3 according to the present embodiment, since the inclination angle θ of the mounting surface 30a of the stage 30 is set to 180 ° during dicing while injecting the cleaning water from the nozzle 32, the cleaning water The direction in which the gravity falls and the direction of gravity coincide with each other, and the washing water flows down efficiently.
 これにより、半導体ウェハ36のダイシング部位及び端部から、半導体ウェハ36とダイシングテープ35の粘着剤との間に洗浄水が浸入することを防ぐことができるので、ダイシングテープ35の粘着剤と洗浄水とが反応して粘着剤の粘着力が低下することによる半導体ウェハ36のダイシングテープ35からの剥がれを確実に無くすことができ、半導体ウェハ36から切り出された半導体チップの飛び出し(ダイシングテープ35から剥がれることによる半導体チップの飛び出し)を抑制することができる。 This prevents the cleaning water from entering between the semiconductor wafer 36 and the adhesive of the dicing tape 35 from the dicing part and end of the semiconductor wafer 36, so the adhesive of the dicing tape 35 and the cleaning water , And the adhesive force of the adhesive decreases, and the peeling of the semiconductor wafer 36 from the dicing tape 35 can be surely eliminated, and the semiconductor chips cut out from the semiconductor wafer 36 jump out (peel off from the dicing tape 35). The jumping of the semiconductor chip due to this can be suppressed.
 従って、半導体ウェハ36に対してストレスを与えることなく、また、加工時の手間をかけることなく、ダイシングを効果的に行うことができるので、半導体ウェハ36から切り出される半導体チップの歩留まりを高めて、半導体チップを安価に提供できるという効果を奏する。 Therefore, dicing can be performed effectively without giving stress to the semiconductor wafer 36 and without taking time and effort during processing, so that the yield of semiconductor chips cut out from the semiconductor wafer 36 can be increased, The semiconductor chip can be provided at a low cost.
 また、本実施の形態に係るダイシング装置3は、従来から存在するダイシング装置、すなわちダイシング装置ワーキングエリア天面側にダイシングブレードが設けられ、ダイシング装置ワーキングエリア底面側にステージが設けられたダイシング装置におけるダイシングブレードとステージとの配置位置を逆にするだけで簡単に実現することができる。 Further, the dicing apparatus 3 according to the present embodiment is a dicing apparatus that has conventionally existed, that is, a dicing apparatus in which a dicing blade is provided on the top surface side of the dicing apparatus working area and a stage is provided on the bottom surface side of the dicing apparatus working area. This can be realized simply by reversing the arrangement positions of the dicing blade and the stage.
 〔実施の形態4〕
 本発明の他の実施の形態について説明すれば、以下の通りである。
[Embodiment 4]
Another embodiment of the present invention will be described as follows.
 (ダイシング装置の概略説明)
 図11は、本実施の形態に係るダイシング装置4の概略構成を示す図である。
(Outline explanation of dicing equipment)
FIG. 11 is a diagram showing a schematic configuration of the dicing apparatus 4 according to the present embodiment.
 上記ダイシング装置4は、基本的に、前記実施の形態3に係るダイシング装置3と構成が同じである。すなわち、ダイシング装置4は、図11に示すように、ステージ40と、ステージ40上に載置された被加工物を回転により切断するダイシングブレード41と、ダイシングブレード41による被加工物のダイシング部位に洗浄液(以下、洗浄水と称する)を射出するノズル(洗浄液供給機構)42、被加工物を載置して搬送するためのフレーム43、ダイシングブレード41を支持すると共に、ダイシングブレード41に駆動力を伝達するダイシングブレード保持部(駆動機構)44とをワーキングエリア400内に配置して構成されている。 The dicing device 4 basically has the same configuration as the dicing device 3 according to the third embodiment. That is, as shown in FIG. 11, the dicing apparatus 4 includes a stage 40, a dicing blade 41 that cuts the workpiece placed on the stage 40 by rotation, and a dicing portion of the workpiece by the dicing blade 41. A nozzle (cleaning liquid supply mechanism) 42 for injecting a cleaning liquid (hereinafter referred to as cleaning water), a frame 43 for placing and conveying a workpiece, and a dicing blade 41 are supported, and a driving force is applied to the dicing blade 41. A dicing blade holding part (drive mechanism) 44 for transmitting is arranged in the working area 400.
 なお、上記ワーキングエリア400は、ダイシング装置4によってダイシング作業を行うためのワークエリアである。このワーキングエリア400に沿って、ダイシング装置4を構成する各構成要素を支持するための筐体等の構造体が形成されている。 The working area 400 is a work area for performing dicing work by the dicing apparatus 4. A structural body such as a housing for supporting each component constituting the dicing apparatus 4 is formed along the working area 400.
 ここで、上記構成の上記ダイシング装置4は、前記実施の形態3の図8に示したダイシング装置3とほぼ同じ構造となっている。すなわち、上記ステージ40は、ワーキングエリア400におけるダイシング装置ワーキングエリア天面側4aに設けられており、フレーム43を載置する載置面40aが鉛直方向に直交する水平面(基準水平面A)と平行、すなわち傾斜角θ=180°になるように設計されている。 Here, the dicing apparatus 4 having the above-described configuration has substantially the same structure as the dicing apparatus 3 shown in FIG. 8 of the third embodiment. That is, the stage 40 is provided on the top surface 4a side of the dicing apparatus working area in the working area 400, and the placement surface 40a on which the frame 43 is placed is parallel to a horizontal plane (reference horizontal plane A) perpendicular to the vertical direction. That is, it is designed so that the inclination angle θ = 180 °.
 しかしながら、ダイシングブレード41の配設位置は、前記実施の形態3とは異なり、ワーキングエリア400におけるダイシング装置ワーキングエリア側面側4bに固定されたダイシングブレード保持部44によって支持されている。 However, unlike the third embodiment, the arrangement position of the dicing blade 41 is supported by the dicing blade holding portion 44 fixed to the side surface 4b of the dicing apparatus working area in the working area 400.
 上記ダイシングブレード保持部44は、ダイシング装置ワーキングエリア側面側4bに固定された支持バー44aによってダイシングブレード41を支持している。この支持バー44aには、ダイシングブレード41に対して回転の駆動力を伝えるための駆動源が設けられている。例えば、駆動源としてモータを用いて、このモータをダイシングブレード41のブレード中心軸41aに連結して、当該ダイシングブレード41を回転駆動させるようにしてもよい。 The dicing blade holding portion 44 supports the dicing blade 41 by a support bar 44a fixed to the side surface 4b of the dicing apparatus working area. The support bar 44 a is provided with a driving source for transmitting a rotational driving force to the dicing blade 41. For example, a motor may be used as a drive source, and this motor may be connected to the blade center shaft 41a of the dicing blade 41 so that the dicing blade 41 is rotationally driven.
 また、ダイシングブレード保持部44は、支持バー44aごとダイシング装置ワーキングエリア天面側4a側に移動可能に設けられている。これにより、ダイシング時に、ダイシングブレード41が切断対象となる被加工物に接触するようになる。 Moreover, the dicing blade holding part 44 is provided so as to be movable to the dicing apparatus working area top side 4a side together with the support bar 44a. Thereby, the dicing blade 41 comes into contact with the workpiece to be cut during dicing.
 上記ノズル42は、ダイシング時において、ダイシングブレード41と被加工物とが接触している切断部分(ダイシング部位)に対して洗浄水(純水)を射出するために設けられている。これにより、ダイシングブレード41の冷却と、切削屑の除去とを行うようになっている。 The nozzle 42 is provided to inject cleaning water (pure water) to a cut portion (dicing portion) where the dicing blade 41 and the workpiece are in contact with each other during dicing. Thereby, the dicing blade 41 is cooled and the cutting waste is removed.
 上記フレーム43は、前記実施の形態3と同様に、全面にダイシングテープ45が設けられ、このダイシングテープ45の上に被加工物である半導体ウェハが貼り付けられている。半導体ウェハは、ダイシングテープ45の粘着剤によりフレーム43に粘着され、結果として、フレーム43に固定されていることになる。 As in the third embodiment, the frame 43 is provided with a dicing tape 45 on the entire surface, and a semiconductor wafer as a workpiece is attached on the dicing tape 45. The semiconductor wafer is adhered to the frame 43 by the adhesive of the dicing tape 45, and as a result, is fixed to the frame 43.
 これにより、半導体ウェハは、フレーム43を介してステージ40の載置面40aに固定載置されることになる。この状態で、半導体ウェハはダイシングブレード41によってダイシングされる。 Thereby, the semiconductor wafer is fixedly mounted on the mounting surface 40 a of the stage 40 through the frame 43. In this state, the semiconductor wafer is diced by the dicing blade 41.
 (実施の形態4による効果)
 本実施の形態に係るダイシング装置4によれば、前記実施の形態3に係るダイシング装置3による効果とほぼ同じ効果を得ることができる。
(Effects of Embodiment 4)
According to the dicing apparatus 4 according to the present embodiment, substantially the same effect as that obtained by the dicing apparatus 3 according to the third embodiment can be obtained.
 しかも、ダイシングブレード保持部44がステージ40におけるダイシング装置ワーキングエリア側面側4bに設けられていることで、ステージ40の載置面40aに向かって射出された洗浄水の自重落下位置に存在しないことになる。このため、ダイシングブレード保持部44に不要な洗浄水がかかることはないので、当該ダイシングブレード保持部44に洗浄水がかかることによるダイシングブレード保持部44の機構の劣化や故障を低減することができるという効果を奏する。 Moreover, since the dicing blade holding portion 44 is provided on the side surface 4b of the dicing apparatus working area in the stage 40, it does not exist at the position where the wash water injected toward the placement surface 40a of the stage 40 falls under its own weight. Become. For this reason, unnecessary cleaning water is not applied to the dicing blade holding unit 44, so that deterioration or failure of the mechanism of the dicing blade holding unit 44 due to the application of cleaning water to the dicing blade holding unit 44 can be reduced. There is an effect.
 上記構成のダイシング装置4では、ダイシングブレード41を駆動する駆動機構であるダイシングブレード保持部44は、支持バー44aを介して、ダイシング装置ワーキングエリア側面側4bに固定されている。換言すれば、上記ダイシングブレード保持部44は、上記ステージ40の載置面40aに載置された半導体ウェハの投影面から外れた位置に設けられている。 In the dicing device 4 having the above-described configuration, the dicing blade holding portion 44 that is a drive mechanism for driving the dicing blade 41 is fixed to the dicing device working area side surface 4b via the support bar 44a. In other words, the dicing blade holding part 44 is provided at a position that is off the projection surface of the semiconductor wafer placed on the placement surface 40 a of the stage 40.
 上記ステージに載置された半導体ウェハの投影面は、ダイシング中に洗浄水が落下する範囲を示す面でもあるので、この投影面から外れた位置に、ダイシングブレードを駆動する駆動機構であるダイシングブレード保持部44を設けることで、駆動機構に対して洗浄水がかからないので、洗浄水が駆動機構にかかることによる劣化を無くし、故障を低減することができるという効果を奏する。 Since the projection surface of the semiconductor wafer placed on the stage is also a surface showing the range in which the cleaning water falls during dicing, the dicing blade is a drive mechanism that drives the dicing blade at a position off the projection surface. By providing the holding portion 44, no washing water is applied to the drive mechanism, so that there is an effect that the deterioration due to the washing water being applied to the drive mechanism can be eliminated and failure can be reduced.
 また、本実施の形態4では、ダイシングブレード保持部44の支持バー44aをダイシング装置ワーキングエリア側面側4bに固定した例について説明したが、これに限定されるものではなく、上記投影面から外れた位置に当該ダイシングブレード保持部44が配置されれば取り付け位置はどこでもよい。 In the fourth embodiment, the example in which the support bar 44a of the dicing blade holding unit 44 is fixed to the side surface side 4b of the dicing apparatus has been described. However, the present invention is not limited to this example, and the diverging blade holding unit 44 is off the projection plane. As long as the dicing blade holding portion 44 is disposed at a position, the attachment position may be anywhere.
 (冷却機構)
 なお、洗浄水の主目的は、冷却よりも切削屑等によるブレード刃の目詰まりを解消することにある。また、各実施の形態では、洗浄水が半導体ウェハから直ぐに落下してしまう場合であっても、洗浄水を連続して射出し続けているので、半導体ウェハやダイシングブレードの冷却には特に問題は生じない。
(Cooling mechanism)
The main purpose of the cleaning water is to eliminate clogging of the blade blades due to cutting waste and the like rather than cooling. Further, in each embodiment, even when the cleaning water is immediately dropped from the semiconductor wafer, since the cleaning water is continuously injected, there is a particular problem in cooling the semiconductor wafer and the dicing blade. Does not occur.
 例えば、半導体ウェハやダイシングブレードの冷却効果をさらに高める為に、ダイシング装置において、例えば図12に示すような冷却機構を設けてもよい。 For example, in order to further enhance the cooling effect of the semiconductor wafer and the dicing blade, a cooling mechanism as shown in FIG. 12 may be provided in the dicing apparatus.
 図12に示す冷却機構では、フレーム上のダイシングテープに貼り付けられた半導体ウェハを固定・保持するステージ表面部分を冷却するために、ダイシングテープとして、高熱伝導性ダイシングテープを用いて、半導体ウェハの裏面側からダイシングテープを介して補助冷却し、さらに、ステージ内に冷却水配管を設けて、ダイシングテープのさらに裏面側から半導体ウェハを冷却するようになっている。 In the cooling mechanism shown in FIG. 12, in order to cool the stage surface portion that fixes and holds the semiconductor wafer attached to the dicing tape on the frame, a high thermal conductive dicing tape is used as the dicing tape. Auxiliary cooling is performed from the back side through a dicing tape, and further, a cooling water pipe is provided in the stage to cool the semiconductor wafer from the further back side of the dicing tape.
 (各実施の形態による作用効果のまとめ)
 以上のように、本発明の各実施の形態に開示されたダイシング装置では、半導体ウェハをダイシングテープの粘着剤による粘着力によって固定載置するステージと、回転の中心軸が前記ステージの半導体ウェハ載置面と平行なダイシングブレードと、上記ダイシングブレードで半導体ウェハをダイシングする際に、ダイシング部位に洗浄液(以下、洗浄水と称する)を吹き付ける洗浄液供給機構とを有するダイシング装置であって、少なくともダイシング時に、上記ステージの半導体ウェハ載置面は、鉛直方向に直交する基準水平面から傾斜角を有するように支持され、上記傾斜角は、上記ステージに載置された半導体ウェハ上に吹き付けられた洗浄水の滞留状態が崩れるのを開始する角度以上に設定されている。
(Summary of effects according to each embodiment)
As described above, in the dicing apparatus disclosed in each embodiment of the present invention, the stage for fixing and mounting the semiconductor wafer by the adhesive force of the adhesive of the dicing tape, and the rotation of the semiconductor wafer on the center axis of the stage are described above. A dicing apparatus having a dicing blade parallel to the mounting surface and a cleaning liquid supply mechanism for spraying a cleaning liquid (hereinafter referred to as cleaning water) to a dicing portion when dicing a semiconductor wafer with the dicing blade, at least during dicing The semiconductor wafer placement surface of the stage is supported so as to have an inclination angle from a reference horizontal plane orthogonal to the vertical direction, and the inclination angle is applied to the cleaning water sprayed onto the semiconductor wafer placed on the stage. It is set to be more than the angle at which the staying state starts to collapse.
 そして、上記ダイシング装置を用いた半導体装置の製造方法では、ステージ上にダイシングテープの粘着剤による粘着力により固定載置された半導体ウェハに対して洗浄水を吹き付けながらダイシングを行う半導体装置の製造方法であって、上記ステージの半導体ウェハ載置面が、鉛直方向に直交する基準水平面から傾斜角を有するように支持され、上記傾斜角が、上記ステージに載置された半導体ウェハ上に吹き付けられた洗浄水の滞留状態が崩れるのを開始する角度以上に設定されている状態で、上記ダイシングを行うようになっている。 And in the manufacturing method of the semiconductor device using the said dicing apparatus, the manufacturing method of the semiconductor device which dices while spraying washing water with respect to the semiconductor wafer fixedly mounted by the adhesive force of the adhesive of a dicing tape on a stage The semiconductor wafer placement surface of the stage is supported so as to have an inclination angle from a reference horizontal plane perpendicular to the vertical direction, and the inclination angle is sprayed onto the semiconductor wafer placed on the stage. The dicing is performed in a state where the cleaning water staying state is set to be equal to or larger than the angle at which the state of starting the collapse of the washing water starts.
 上記構成によれば、少なくともダイシング時に、上記ステージの半導体ウェハ載置面は、鉛直方向に直交する基準水平面から傾斜角を有するように支持され、上記傾斜角は、上記ステージに載置された半導体ウェハ上に吹き付けられた洗浄水の滞留状態が崩れるのを開始する角度以上に設定されていることで、ダイシング中に半導体ウェハ上に吹き付けられる洗浄水は当該半導体ウェハ上から直ぐに流れ落ちることになるので、ダイシング中に半導体ウェハ上に洗浄水が滞留するのを抑制することができる。 According to the above configuration, at least during dicing, the semiconductor wafer placement surface of the stage is supported so as to have an inclination angle from a reference horizontal plane perpendicular to the vertical direction, and the inclination angle is a semiconductor placed on the stage. Since the cleaning water sprayed on the wafer is set at an angle greater than the angle at which it starts to collapse, the cleaning water sprayed on the semiconductor wafer during dicing will immediately flow down from the semiconductor wafer. It is possible to suppress the retention of cleaning water on the semiconductor wafer during dicing.
 これにより、ダイシング中に、滞留した洗浄水が半導体ウェハのダイシング部位及び端部への洗浄水の浸入を防ぐことができるので、半導体ウェハとダイシングテープとの間の粘着剤接合部分に洗浄水が浸入しない。 As a result, the cleaning water staying in the dicing can prevent the cleaning water from entering the dicing portion and the end of the semiconductor wafer, so that the cleaning water is applied to the adhesive bonding portion between the semiconductor wafer and the dicing tape. Do not enter.
 この結果、ダイシングテープの粘着剤と洗浄水とが反応することがないので、粘着剤の粘着力の低下が生じないため、半導体ウェハがダイシングテープから剥がれるのを防ぐことができ、半導体ウェハから切り出された半導体チップの飛び出し(ダイシングテープから剥がれることによる半導体チップの飛び出し)を抑制することができる。 As a result, since the adhesive of the dicing tape and the washing water do not react with each other, the adhesive strength of the adhesive does not decrease, so that the semiconductor wafer can be prevented from being peeled off from the dicing tape and cut out from the semiconductor wafer. It is possible to suppress the protruding semiconductor chip (the semiconductor chip protruding due to peeling off from the dicing tape).
 従って、ダイシング中に、半導体ウェハに余計なストレスをかけることなく、当該半導体ウェハから適切に半導体チップを切り出すことができるので、半導体装置の歩留まりを向上させ、この結果、半導体装置のコストを下げることができるという効果を奏する。 Accordingly, since the semiconductor chip can be appropriately cut out from the semiconductor wafer without applying extra stress to the semiconductor wafer during dicing, the yield of the semiconductor device is improved, and as a result, the cost of the semiconductor device is reduced. There is an effect that can be.
 ここまでは、傾斜角θは、10°以上であり、20°以上が好ましいこと、そして、90°の場合の実施の形態、180°の場合の実施の形態について説明したが、上記傾斜角θは、10°以上350°以下の何れかに設定すればよい。この範囲に、傾斜角θを設定すれば、ダイシング中に半導体ウェハ上に洗浄水が滞留するのを防ぐことが可能である。 Up to this point, the inclination angle θ is 10 ° or more, preferably 20 ° or more, and the embodiment in the case of 90 ° and the embodiment in the case of 180 ° have been described. May be set to any angle between 10 ° and 350 °. If the inclination angle θ is set within this range, it is possible to prevent the cleaning water from staying on the semiconductor wafer during dicing.
 但し、各角度によりダイシング装置自体の構造も変更させる必要がある。例えば、傾斜角90°、180°の場合では、上述したように、ステージ、ダイシングブレードの配置を変更する必要がある。 However, it is necessary to change the structure of the dicing machine itself according to each angle. For example, when the inclination angles are 90 ° and 180 °, it is necessary to change the arrangement of the stage and the dicing blade as described above.
 また、上記の傾斜角によっては、洗浄水を吹き付ける方向を変える必要がある。 Also, depending on the above inclination angle, it is necessary to change the direction of spraying the cleaning water.
 すなわち、ダイシング時に設定される上記傾斜角θが10°~90°、270°~350°のとき、ダイシング部位に対して上方から下方に向かって洗浄水を吹き付け、ダイシング時に設定される上記傾斜角θが90°~270°のとき、ダイシング部位に対して下方から上方に向かって洗浄水を吹き付けることが好ましい。 That is, when the inclination angle θ set at the time of dicing is 10 ° to 90 °, 270 ° to 350 °, the cleaning water is sprayed from the upper side to the lower side with respect to the dicing portion, and the inclination angle set at the time of dicing is set. When θ is 90 ° to 270 °, it is preferable to spray cleaning water from below to above the dicing site.
 上記構成によれば、傾斜角に応じて、半導体ウェハに吹き付ける洗浄水の吹き付け方向を変えるようになっているので、半導体ウェハに対して洗浄水を安定して吹き付けることができる。 According to the above configuration, since the spraying direction of the cleaning water sprayed onto the semiconductor wafer is changed according to the inclination angle, the cleaning water can be stably sprayed onto the semiconductor wafer.
 例えば、ダイシング時に設定される上記傾斜角θが10°~90°、270°~350°のときには、90°、270°の場合を除いて、ステージの載置面が上向きになっているので、ダイシング部位に対して上方から下方に向かって洗浄水を吹き付けることによって、効率よく洗浄水の吹き付けを行うことができる。 For example, when the tilt angle θ set at the time of dicing is 10 ° to 90 °, 270 ° to 350 °, the stage mounting surface is upward except in the case of 90 ° and 270 °. By spraying the cleaning water on the dicing part from the top to the bottom, the cleaning water can be efficiently sprayed.
 また、ダイシング時に設定される上記傾斜角θが90°~270°のときには、90°、270°の場合を除いて、ステージの載置面が下向きになっているので、ダイシング部位に対して下方から上方に向かって洗浄水を吹き付けることによって、効率よく洗浄水の吹き付けを行うことができる。 Further, when the tilt angle θ set at the time of dicing is 90 ° to 270 °, the stage mounting surface faces downward except in the case of 90 ° and 270 °, so that it is below the dicing portion. By spraying the cleaning water upward from the top, the cleaning water can be efficiently sprayed.
 以上のように、本発明のダイシング装置によれば、ダイシング中に半導体ウェハに対してストレスをかけないようにしているので、ストレスに弱く、且つ、薄膜化された太陽電池用の半導体ウェハ(ソーラセル)を適切にダイシングすることができる。 As described above, according to the dicing apparatus of the present invention, since stress is not applied to the semiconductor wafer during dicing, the semiconductor wafer for solar cells (solar cell) which is weak against stress and thinned. ) Can be appropriately diced.
 さらに、本発明のダイシング装置によれば、ダイシング中に半導体ウェハとダイシングテープとの間に洗浄水が浸入し難いので、ダイシングテープの粘着剤と洗浄水とが反応して発生する粘着剤の粘着力の低下を防止できる。このため、(1)粘着剤の粘着力が弱いダイシングテープの採用、(2)一般的なスポンジローラの採用により、半導体ウェハをダイシングテープに軽く貼り付けた状態でダイシングを行うことが可能となる。 Furthermore, according to the dicing apparatus of the present invention, since the cleaning water is difficult to enter between the semiconductor wafer and the dicing tape during dicing, the adhesive pressure sensitive adhesive generated by the reaction between the dicing tape adhesive and the cleaning water. It is possible to prevent a decrease in power. For this reason, it is possible to perform dicing with the semiconductor wafer lightly attached to the dicing tape by using (1) a dicing tape whose adhesive has a weak adhesive strength and (2) a general sponge roller. .
 このように、半導体ウェハをダイシングテープに軽く貼り付けた状態であれば、ダイシング後に、半導体ウェハをダイシングテープから剥がすために、必要以上の応力を半導体ウェハにかけなくてすむので、半導体ウェハをダイシングテープから容易に剥がすことが可能となる。 In this way, if the semiconductor wafer is lightly affixed to the dicing tape, it is not necessary to apply excessive stress to the semiconductor wafer after the dicing so that the semiconductor wafer is peeled off from the dicing tape. Can be easily peeled off.
 従って、ダイシングテープから剥がす際に、半導体ウェハに必要以上に応力をかけなくてすむので、ダイシングテープから剥がす際の応力により割れる虞のある薄膜化された半導体ウェハに好適に用いることができる。 Therefore, when peeling from the dicing tape, it is not necessary to apply stress to the semiconductor wafer more than necessary. Therefore, the semiconductor wafer can be suitably used for a thinned semiconductor wafer that may be broken by the stress when peeling from the dicing tape.
 特に、太陽電池用の半導体ウェハ(以下、ソーラセルと称する)は、薄膜半導体ウェハを代表する一例であり、ソーラセルをダイシングする際、ソーラセルの電極面側をダイシングテープに貼り付けた場合は、この電極の凹部にダイシングテープの粘着剤が入り込み、強力なアンカー効果を奏するので、ダイシングテープの粘着剤の粘着力はできるだけ弱くする必要がある。反対に、ソーラセルの受光面側をダイシングテープに貼り付けた場合においても、薄膜半導体ウェハであることを鑑み、ダイシングテープの粘着剤の粘着力をできるだけ弱くする必要があることは言うまでもない。この粘着剤の粘着力は、ダイシング中にダイシングテープからソーラセルが剥がれない程度の粘着力であればよい。 In particular, a semiconductor wafer for a solar cell (hereinafter referred to as a solar cell) is an example that represents a thin film semiconductor wafer. When dicing a solar cell, the electrode surface side of the solar cell is attached to a dicing tape. Since the adhesive of the dicing tape enters into the recesses and exerts a strong anchor effect, it is necessary to make the adhesive force of the adhesive of the dicing tape as weak as possible. On the contrary, even when the light receiving surface side of the solar cell is affixed to the dicing tape, it goes without saying that it is necessary to make the adhesive force of the adhesive of the dicing tape as weak as possible in view of the thin film semiconductor wafer. The adhesive strength of this adhesive may be an adhesive strength that does not peel the solar cell from the dicing tape during dicing.
 このように、ソーラセルの場合には、ダイシングテープの粘着剤の粘着力を極力弱めた状態でダイシングを行うため、ソーラセルとダイシングテープの粘着剤との間に洗浄水が浸入しやすい状況にあり、浸入した洗浄水とダイシングテープの粘着剤が反応して、粘着剤の粘着力が低下することをできるだけ無くす必要がある。 Thus, in the case of solar cells, in order to perform dicing in a state where the adhesive strength of the adhesive of the dicing tape is weakened as much as possible, the cleaning water is likely to enter between the solar cell and the adhesive of the dicing tape, It is necessary to eliminate as much as possible the decrease in the adhesive strength of the adhesive due to the reaction between the entering cleaning water and the adhesive of the dicing tape.
 このような理由から、本発明のダイシング装置は、一般的な半導体ウェハからソーラセルのようにストレスに弱い半導体ウェハまでのどのような半導体ウェハのダイシングにも好適に用いることができるが、特に、ソーラセルのダイシングに好適に用いることができる。 For these reasons, the dicing apparatus of the present invention can be suitably used for dicing any semiconductor wafer from a general semiconductor wafer to a semiconductor wafer that is vulnerable to stress such as a solar cell. It can be suitably used for dicing.
 また、ダイシング時に設定される上記傾斜角は、10°~350°であることが好ましい。 Further, it is preferable that the inclination angle set at the time of dicing is 10 ° to 350 °.
 上記傾斜角が10°~350°の範囲であれば、半導体ウェハ上に吹き付けられた洗浄液が直ぐに流れ落ちることになり、ダイシング中に、滞留した洗浄液が半導体ウェハのダイシング部位及び端部への洗浄液の浸入を防ぐことができるので、ダイシングテープの粘着剤と洗浄液とが反応して粘着剤の粘着力が低下することによる半導体ウェハのダイシングテープからの剥がれを確実に無くすことができ、半導体ウェハから切り出された半導体チップの飛び出し(ダイシングテープから剥がれることによる半導体チップの飛び出し)を抑制することができる。従って、洗浄液の浸入に起因する様々な問題が生じない効果を奏する。 If the tilt angle is in the range of 10 ° to 350 °, the cleaning solution sprayed on the semiconductor wafer will immediately flow down, and the cleaning solution that remains during dicing will cause the cleaning solution remaining on the dicing sites and ends of the semiconductor wafer. Since the intrusion can be prevented, the adhesive of the dicing tape and the cleaning liquid react to reduce the adhesive strength of the adhesive, so that the semiconductor wafer can be surely removed from the dicing tape and cut out from the semiconductor wafer. It is possible to suppress the protruding semiconductor chip (the semiconductor chip protruding due to peeling off from the dicing tape). Therefore, there is an effect that various problems caused by the penetration of the cleaning liquid do not occur.
 なお、洗浄液を半導体ウェハからより流れやすくするためには、上記傾斜角は20°以上340°以下であることが好ましい。 In order to make the cleaning liquid flow more easily from the semiconductor wafer, the inclination angle is preferably 20 ° or more and 340 ° or less.
 ダイシング時に設定される上記傾斜角は、90°であることが好ましい。 The tilt angle set during dicing is preferably 90 °.
 上記傾斜角が90°であることで、洗浄液の自重落下方向と重力方向とが合致し、半導体ウェハ上での表面張力による洗浄液の滞留が少ないため、最も効率よく洗浄液が流れ落ちることになる。 When the tilt angle is 90 °, the direction of gravity drop of the cleaning liquid matches the direction of gravity, and the cleaning liquid stays on the semiconductor wafer less due to surface tension, so that the cleaning liquid flows most efficiently.
 これにより、半導体ウェハのダイシング部位及び端部から、半導体ウェハとダイシングテープの粘着剤との間に洗浄液が浸入することを確実に防ぐことができるので、ダイシングテープの粘着剤と洗浄液とが反応して粘着剤の粘着力が低下することによる半導体ウェハのダイシングテープからの剥がれを確実に無くすことができ、半導体ウェハから切り出された半導体チップの飛び出し(ダイシングテープから剥がれることによる半導体チップの飛び出し)を抑制することができる。 As a result, it is possible to reliably prevent the cleaning liquid from entering between the semiconductor wafer and the adhesive of the dicing tape from the dicing part and end of the semiconductor wafer, so that the adhesive of the dicing tape and the cleaning liquid react. As a result, the peeling of the semiconductor wafer from the dicing tape due to the decrease in the adhesive strength of the adhesive can be surely eliminated, and the semiconductor chip cut out from the semiconductor wafer (the semiconductor chip jumping out from the dicing tape) can be removed. Can be suppressed.
 ダイシング時に設定される上記傾斜角は、180°であることが好ましい。 The tilt angle set during dicing is preferably 180 °.
 上記傾斜角が180°であるということは、半導体ウェハのダイシング面が下方に向き、ダインシングブレードが上方に向くように配置されたダイシング装置の構造となる。これは、通常のダイシング装置の上面と下面に配置した部材を入れ替えた構造を示している。 That the inclination angle is 180 ° is the structure of the dicing apparatus in which the dicing surface of the semiconductor wafer is directed downward and the dicing blade is directed upward. This shows a structure in which members arranged on the upper surface and the lower surface of a normal dicing apparatus are exchanged.
 従って、ステージの半導体ウェハ載置面を傾斜させるための機構は不要で、既存のダイシング装置において、ステージとダイシングブレードの配置を逆転させればよいだけなので、ダイシング装置を容易に、しかも安価に提供することができる。 Therefore, a mechanism for tilting the semiconductor wafer mounting surface of the stage is unnecessary, and in the existing dicing apparatus, it is only necessary to reverse the arrangement of the stage and the dicing blade, so the dicing apparatus can be provided easily and inexpensively. can do.
 上記ダイシングブレードを駆動する駆動機構は、上記ステージに載置された半導体ウェハの投影面から外れた位置に設けられている。 The drive mechanism for driving the dicing blade is provided at a position off the projection surface of the semiconductor wafer placed on the stage.
 上記ステージに載置された半導体ウェハの投影面は、ダイシング中に洗浄液が落下する範囲を示す面でもあるので、この投影面から外れた位置に、ダイシングブレードを駆動する駆動機構を設けることで、駆動機構に対して洗浄液がかからないので、洗浄液が駆動機構にかかることによる劣化を無くし、故障を低減することができるという効果を奏する。 Since the projection surface of the semiconductor wafer placed on the stage is also a surface showing a range in which the cleaning liquid falls during dicing, by providing a drive mechanism for driving the dicing blade at a position off the projection surface, Since no cleaning liquid is applied to the drive mechanism, the deterioration due to the cleaning liquid being applied to the drive mechanism is eliminated, and the failure can be reduced.
 上記洗浄液供給機構は、ダイシング時に設定される上記傾斜角が10°~90°、270°~350°のとき、ダイシング部位に対して上方から下方に向かって洗浄液を吹き付け、ダイシング時に設定される上記傾斜角が90°~270°のとき、ダイシング部位に対して下方から上方に向かって洗浄液を吹き付けることが好ましい。 The cleaning liquid supply mechanism sprays the cleaning liquid from the upper side to the lower side when the tilt angle set during dicing is 10 ° to 90 °, 270 ° to 350 °, and is set during dicing. When the inclination angle is 90 ° to 270 °, it is preferable to spray the cleaning liquid from below to above the dicing site.
 上記構成によれば、傾斜角に応じて、半導体ウェハに吹き付ける洗浄液の吹き付け方向を変えるようになっているので、半導体ウェハに対して洗浄液を安定して吹き付けることができる。 According to the above configuration, since the spraying direction of the cleaning liquid sprayed on the semiconductor wafer is changed according to the inclination angle, the cleaning liquid can be sprayed stably on the semiconductor wafer.
 例えば、ダイシング時に設定される上記傾斜角が10°~90°、270°~350°のときには、90°、270°の場合を除いて、ステージの載置面が上向きになっているので、ダイシング部位に対して上方から下方に向かって洗浄液を吹き付けることによって、効率よく洗浄液の吹き付けを行うことができる。 For example, when the tilt angle set at the time of dicing is 10 ° to 90 °, 270 ° to 350 °, the stage mounting surface is upward except in the case of 90 ° and 270 °. By spraying the cleaning liquid on the part from the top to the bottom, the cleaning liquid can be efficiently sprayed.
 また、ダイシング時に設定される上記傾斜角が90°~270°のときには、90°、270°の場合を除いて、ステージの載置面が下向きになっているので、ダイシング部位に対して下方から上方に向かって洗浄液を吹き付けることによって、効率よく洗浄液の吹き付けを行うことができる。 Further, when the tilt angle set at the time of dicing is 90 ° to 270 °, except for the cases of 90 ° and 270 °, the stage mounting surface is directed downward. By spraying the cleaning liquid upward, the cleaning liquid can be efficiently sprayed.
 上記半導体ウェハは、太陽電池用の半導体ウェハであることが好ましい。 The semiconductor wafer is preferably a semiconductor wafer for solar cells.
 上記構成のダイシング装置によれば、ダイシング中に半導体ウェハに対してストレスをかけないようにしているので、ストレスに弱く、且つ、薄膜化された太陽電池用の半導体ウェハを適切にダイシングすることができる。 According to the dicing apparatus having the above configuration, since stress is not applied to the semiconductor wafer during dicing, the semiconductor wafer for solar cells that is weak against stress and thinned can be appropriately diced. it can.
 本発明は上述した各実施形態に限定されるものではなく、請求項に示した範囲で種々の変更が可能であり、異なる実施形態にそれぞれ開示された技術的手段を適宜組み合わせて得られる実施形態についても本発明の技術的範囲に含まれる。 The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.
 本発明は、半導体関連分野に適用することができ、特に、今後大幅な需要増が見込まれる太陽電池(ソーラセル)分野に適用することができる。 The present invention can be applied to the semiconductor-related field, and in particular, it can be applied to the solar cell (solar cell) field in which a significant demand increase is expected in the future.
1 ダイシング装置
1a ダイシング装置ワーキングエリア天面側
1b ダイシング装置ワーキングエリア底面側
2 ダイシング装置
2a ダイシング装置ワーキングエリア右側面側
2b ダイシング装置ワーキングエリア左側面側
3 ダイシング装置
3a ダイシング装置ワーキングエリア天面側
3b ダイシング装置ワーキングエリア底面側
4 ダイシング装置
4a ダイシング装置ワーキングエリア天面側
4b ダイシング装置ワーキングエリア側面側
10 ステージ
10a 載置面
11 ダイシングブレード
11a ブレード中心軸
12 ノズル(洗浄液供給機構)
13 フレーム
14 ダイシングブレード保持部(駆動機構)
14a 支持バー
15 ダイシングテープ
16 半導体ウェハ
20 ステージ
20a 載置面
21 ダイシングブレード
21a ブレード中心軸
22 ノズル(洗浄液供給機構)
23 フレーム
24 ダイシングブレード保持部(駆動機構)
24a 支持バー
25 ダイシングテープ
26 半導体ウェハ
30 ステージ
30a 載置面
31 ダイシングブレード
31a ブレード中心軸
32 ノズル(洗浄液供給機構)
33 フレーム
34 ダイシングブレード保持部(駆動機構)
34a 支持バー
35 ダイシングテープ
36 半導体ウェハ
40 ステージ
40a 載置面
41 ダイシングブレード
41a ブレード中心軸
42 ノズル(洗浄液供給機構)
43 フレーム
44 ダイシングブレード保持部(駆動機構)
44a 支持バー
45 ダイシングテープ
100 ワーキングエリア
200 ワーキングエリア
300 ワーキングエリア
400 ワーキングエリア
A 基準水平面
B 基準法線面
θ 傾斜角
DESCRIPTION OF SYMBOLS 1 Dicing apparatus 1a Dicing apparatus working area top side 1b Dicing apparatus working area bottom side 2 Dicing apparatus 2a Dicing apparatus working area right side 2b Dicing apparatus working area left side 3 Dicing apparatus 3a Dicing apparatus working area top side 3b Dicing Device working area bottom surface side 4 Dicing device 4a Dicing device working area top surface side 4b Dicing device working area side surface side 10 Stage 10a Mounting surface 11 Dicing blade 11a Blade central axis 12 Nozzle (cleaning liquid supply mechanism)
13 Frame 14 Dicing blade holder (drive mechanism)
14a Support bar 15 Dicing tape 16 Semiconductor wafer 20 Stage 20a Mounting surface 21 Dicing blade 21a Blade center shaft 22 Nozzle (cleaning liquid supply mechanism)
23 Frame 24 Dicing blade holder (drive mechanism)
24a Support bar 25 Dicing tape 26 Semiconductor wafer 30 Stage 30a Mounting surface 31 Dicing blade 31a Blade center shaft 32 Nozzle (cleaning liquid supply mechanism)
33 Frame 34 Dicing blade holder (drive mechanism)
34a Support bar 35 Dicing tape 36 Semiconductor wafer 40 Stage 40a Mounting surface 41 Dicing blade 41a Blade center shaft 42 Nozzle (cleaning liquid supply mechanism)
43 Frame 44 Dicing blade holder (drive mechanism)
44a Support bar 45 Dicing tape 100 Working area 200 Working area 300 Working area 400 Working area A Reference horizontal plane B Reference normal plane θ Inclination angle

Claims (8)

  1.  半導体ウェハをダイシングテープの粘着剤による粘着力によって固定載置するステージと、
     回転の中心軸が前記ステージの半導体ウェハ載置面と平行なダイシングブレードと、
     上記ダイシングブレードで半導体ウェハをダイシングする際に、ダイシング部位に洗浄液を吹き付ける洗浄液供給機構とを有するダイシング装置であって、
     少なくともダイシング時に、上記ステージの半導体ウェハ載置面は、鉛直方向に直交する基準水平面から傾斜角を有するように支持され、上記傾斜角は、上記ステージに載置された半導体ウェハ上に吹き付けられた洗浄液の滞留状態が崩れるのを開始する角度以上に設定されていることを特徴とするダイシング装置。
    A stage on which a semiconductor wafer is fixedly mounted by an adhesive force of a dicing tape adhesive;
    A dicing blade whose central axis of rotation is parallel to the semiconductor wafer mounting surface of the stage;
    A dicing apparatus having a cleaning liquid supply mechanism for spraying a cleaning liquid on a dicing site when dicing a semiconductor wafer with the dicing blade,
    At least during dicing, the semiconductor wafer placement surface of the stage is supported so as to have an inclination angle from a reference horizontal plane perpendicular to the vertical direction, and the inclination angle is sprayed onto the semiconductor wafer placed on the stage. A dicing apparatus characterized in that the dicing apparatus is set at an angle greater than or equal to an angle at which the staying state of the cleaning liquid starts to collapse.
  2.  ダイシング時に設定される上記傾斜角は、10°~350°であることを特徴とする請求項1に記載のダイシング装置。 2. The dicing apparatus according to claim 1, wherein the inclination angle set at the time of dicing is 10 ° to 350 °.
  3.  ダイシング時に設定される上記傾斜角は、90°であることを特徴とする請求項2に記載のダイシング装置。 3. The dicing apparatus according to claim 2, wherein the inclination angle set at the time of dicing is 90 °.
  4.  ダイシング時に設定される上記傾斜角は、180°であることを特徴とする請求項2に記載のダイシング装置。 3. The dicing apparatus according to claim 2, wherein the inclination angle set at the time of dicing is 180 °.
  5.  上記ダイシングブレードを駆動する駆動機構は、上記ステージに載置された半導体ウェハの投影面から外れた位置に設けられていることを特徴とする請求項4に記載のダイシング装置。 The dicing apparatus according to claim 4, wherein the driving mechanism for driving the dicing blade is provided at a position deviated from a projection surface of the semiconductor wafer placed on the stage.
  6.  上記洗浄液供給機構は、
     ダイシング時に設定される上記傾斜角が10°~90°、270°~350°のとき、ダイシング部位に対して上方から下方に向かって洗浄液を吹き付け、
     ダイシング時に設定される上記傾斜角が90°~270°のとき、ダイシング部位に対して下方から上方に向かって洗浄液を吹き付けることを特徴とする請求項2に記載のダイシング装置。
    The cleaning liquid supply mechanism is
    When the inclination angle set at the time of dicing is 10 ° to 90 °, 270 ° to 350 °, the cleaning liquid is sprayed from the upper side to the lower side with respect to the dicing part,
    3. The dicing apparatus according to claim 2, wherein when the inclination angle set during dicing is 90 ° to 270 °, the cleaning liquid is sprayed from below to above the dicing portion.
  7.  上記半導体ウェハは、太陽電池用の半導体ウェハであることを特徴とする請求項1~6の何れか1項に記載のダイシング装置。 The dicing apparatus according to any one of claims 1 to 6, wherein the semiconductor wafer is a semiconductor wafer for a solar cell.
  8.  ステージ上にダイシングテープの粘着剤の粘着力により固定載置された半導体ウェハに対して洗浄液を拭き付けながらダイシングを行う半導体装置の製造方法であって、
     上記ステージの半導体ウェハ載置面が、鉛直方向に直交する基準水平面から傾斜角を有するように支持され、上記傾斜角が、上記ステージに載置された半導体ウェハ上に吹き付けられた洗浄液の滞留状態が崩れるのを開始する角度以上に設定されている状態で、上記ダイシングを行うことを特徴とする半導体装置の製造方法。
    A method of manufacturing a semiconductor device that performs dicing while wiping a cleaning liquid on a semiconductor wafer fixedly mounted by an adhesive force of an adhesive of a dicing tape on a stage,
    The semiconductor wafer placement surface of the stage is supported so as to have an inclination angle from a reference horizontal plane perpendicular to the vertical direction, and the inclination angle is a staying state of the cleaning liquid sprayed on the semiconductor wafer placed on the stage The method of manufacturing a semiconductor device, wherein the dicing is performed in a state where the angle is set to be equal to or greater than an angle at which collapse starts.
PCT/JP2012/073110 2011-10-05 2012-09-10 Dicing device, and method for manufacturing semiconductor device WO2013051375A1 (en)

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CN108312369B (en) * 2018-03-28 2024-05-07 深圳赛意法微电子有限公司 Wafer cutting equipment and wafer cutting method

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