JPH11298023A - Manufacture of single-crystal silicon solar battery and module - Google Patents
Manufacture of single-crystal silicon solar battery and moduleInfo
- Publication number
- JPH11298023A JPH11298023A JP10110255A JP11025598A JPH11298023A JP H11298023 A JPH11298023 A JP H11298023A JP 10110255 A JP10110255 A JP 10110255A JP 11025598 A JP11025598 A JP 11025598A JP H11298023 A JPH11298023 A JP H11298023A
- Authority
- JP
- Japan
- Prior art keywords
- crystal silicon
- cells
- module
- solar cell
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000005520 cutting process Methods 0.000 claims abstract description 7
- 238000007667 floating Methods 0.000 claims description 2
- 239000002699 waste material Substances 0.000 abstract description 4
- 239000002210 silicon-based material Substances 0.000 abstract description 2
- 238000007796 conventional method Methods 0.000 abstract 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000003916 acid precipitation Methods 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- -1 silica compound Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は太陽電池及び太陽電
池モジュールの作製方法に関し、特に、光電変換効率に
優れた単結晶シリコン太陽電池、及びそれを用いたモジ
ュールの生産効率を改善することのできる、単結晶シリ
コン太陽電池の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a solar cell and a solar cell module, and more particularly to a single crystal silicon solar cell excellent in photoelectric conversion efficiency and a module using the same can be improved in production efficiency. And a method for manufacturing a single crystal silicon solar cell.
【０００２】[0002]
【従来技術】化石燃料の大量消費に伴い、近年、地球温
暖化、酸性雨、或いは大気汚染等の環境破壊が深刻にな
る一方、石油資源の枯渇も確実視されるに至っている。
そこで、クリーンで省資源にも寄与するエネルギー源と
して、従来から、太陽電池、風力発電、地熱発電等を利
用することが試みられているが、これらの中でも、特
に、シリコンを用いた太陽電池は、原料のシリコンが豊
富に存在するのみならずクリーンで省資源にも寄与する
上、使用し易さや移動容易性或は用途の広さ等において
優れているために、有力なエネルギー源となりつつあ
る。2. Description of the Related Art In recent years, with the massive consumption of fossil fuels, environmental destruction such as global warming, acid rain, or air pollution has become serious, and depletion of petroleum resources has come to be seen with certainty.
Therefore, solar cells, wind power generation, geothermal power generation, and the like have been conventionally used as energy sources that are clean and contribute to resource saving. Among these, solar cells using silicon are, in particular, used. In addition to its abundance of silicon as a raw material, it is clean and contributes to resource saving, and is excellent in ease of use, ease of movement, and wide range of applications, etc., making it an important energy source. .
【０００３】太陽電池に用いられるシリコンとしては、
単結晶シリコン、多結晶シリコン、及びアモルファスシ
リコンが利用されている。これらのうち、単結晶シリコ
ンが最も光電変換効率が高く性能的に優れているもの
の、単結晶を成長させるために手間と費用がかかるとい
う欠点がある。そこで、より簡便に作製することのでき
る多結晶シリコンやアモルファスシリコンも利用されつ
つあるが、光電変換効率の点でまだ十分と言えるもので
はない。[0003] As silicon used for solar cells,
Single crystal silicon, polycrystalline silicon, and amorphous silicon have been used. Of these, single crystal silicon has the highest photoelectric conversion efficiency and is excellent in performance, but has the disadvantage that it takes time and effort to grow a single crystal. Therefore, polycrystalline silicon and amorphous silicon, which can be more easily manufactured, are being used, but they cannot be said to be sufficient in terms of photoelectric conversion efficiency.
【０００４】そこで、本発明者らは、丸形で引き上げら
れた単結晶シリコンインゴットを角形に成型する際に削
り取られる部分に着目して検討した結果、インゴットを
角形に成型した後角形基板としてスライスし、これにセ
ルを設けるのではなく、丸形のインゴットをスライスし
て丸形基板を作製し、この全面にセルを設けた後角形部
分と扇形部分に裁断すれば、角形部分をモジュール化し
易いように正確に切り取ることができる上、扇形部分も
寄せ集めてモジュール化することができるので、全体と
しての製造効率を、従来より大幅に改善することがで
き、これによって製品としての太陽電池の価格を低減さ
せることができることを見出し、本発明に到達した。The inventors of the present invention have focused on a portion that is cut off when a single crystal silicon ingot pulled up in a round shape is formed into a square shape, and as a result, the ingot was formed into a square shape and then sliced as a square substrate. Then, instead of providing a cell, a round substrate is prepared by slicing a round ingot, and the entire surface is provided with cells and then cut into a square portion and a sector portion. In addition to being able to cut out accurately, the fan-shaped part can also be gathered and modularized, so that the overall manufacturing efficiency can be greatly improved compared to the conventional, and the price of the solar cell as a product And found that the present invention can be reduced, and arrived at the present invention.
【０００５】[0005]
【発明が解決しようとする課題】従って本発明の第１の
目的は、単結晶シリコン太陽電池製造工程におけるシリ
コンの重量歩留りを改善し、製品価格を低減させること
のできる単結晶シリコン太陽電池の製造方法を提供する
ことにある。本発明の第２の目的は、従来削り取られて
いた単結晶シリコンインゴットの部分を有効に利用し
て、安価なモジュールを提供することのできる、モジュ
ール作製方法を提供することにある。SUMMARY OF THE INVENTION Accordingly, a first object of the present invention is to manufacture a single crystal silicon solar cell capable of improving the weight yield of silicon in the process of manufacturing a single crystal silicon solar cell and reducing the product price. It is to provide a method. A second object of the present invention is to provide a module manufacturing method capable of providing an inexpensive module by effectively using a portion of a single-crystal silicon ingot that has been conventionally cut off.
【０００６】[0006]
【課題を解決するための手段】本発明の上記の諸目的
は、単結晶シリコンインゴットを輪切りにして得た円板
状の単結晶シリコン基板の全面に太陽電池のセルを作製
し、次いで裁断することを特徴とする、単結晶シリコン
太陽電池の作製方法、及び、その方法によって製造され
た太陽電池を複数使用するモジュール製造方法によって
達成された。SUMMARY OF THE INVENTION The above objects of the present invention are attained by producing a solar cell on the entire surface of a disk-shaped single-crystal silicon substrate obtained by cutting a single-crystal silicon ingot into a circle, and then cutting the solar cell. The present invention has been achieved by a method for manufacturing a single-crystal silicon solar cell, and a module manufacturing method using a plurality of solar cells manufactured by the method.
【０００７】[0007]
【発明の実施の形態】本発明で使用する単結晶シリコン
インゴットは公知の方法によって適宜製造することがで
きるが、特に、チョクラルスキー法（ＣＺ法）または、
フローティング・ゾーン法（ＦＺ法）によって製造する
ことが、製造安定性の観点から好ましい。また、得られ
たインゴットをスライスして円板状基板を作製すること
も、公知の方法によって容易に行うことができる。BEST MODE FOR CARRYING OUT THE INVENTION The single crystal silicon ingot used in the present invention can be appropriately manufactured by a known method. In particular, Czochralski method (CZ method) or
Manufacturing by the floating zone method (FZ method) is preferable from the viewpoint of manufacturing stability. In addition, the obtained ingot can be sliced into a disk-shaped substrate by a known method.
【０００８】得られた円板状基板は、通常、ＫＯＨ等の
アルカリ溶液を用いた異方性エッチング処理によりスラ
イス時の表面歪み層が除去されると共にテキストチャー
加工され、次いで、順次、ＲＣＡ洗浄され、温水引き上
げ乾燥される。この基板全面に太陽電池のセルを形成さ
せることは公知の方法によって容易に行うことができ
る。本発明においては、全面にセルを形成させた後、で
きるだけ無駄が生じないように裁断すれば良いが、特
に、角形セル１枚と扇形セル４枚に裁断することが好ま
しい。このように裁断することにより、角形セルを完全
な形状の角形セルとすることができるので、モジュール
にする時に無駄な空間が発生しない。尚、これらのセル
は、必要に応じて更に小さく裁断しても良いことは当然
である。The obtained disc-shaped substrate is usually subjected to anisotropic etching using an alkaline solution such as KOH to remove a surface distortion layer at the time of slicing and to perform a texturing process. It is pulled up with hot water and dried. Forming the solar cell on the entire surface of the substrate can be easily performed by a known method. In the present invention, after cells are formed on the entire surface, cutting may be performed so as to minimize waste, but it is particularly preferable to cut into one square cell and four sector cells. By cutting in this manner, the square cell can be made into a square cell having a perfect shape, so that no useless space is generated when the module is formed. Note that these cells may be cut into smaller cells as needed.
【０００９】このようにして得られた角形セルや扇形セ
ルを公知の方法によって寄せ集めて一体化し、より大型
のモジュールとすることができる（図１参照）。モジュ
ール化する場合には、並べるセルとセルの間に、配線の
ための空間の他には無駄な空間が生じないようにするこ
とが好ましく、また、作業性をも考慮すれば、モジュー
ル化に適した角形セルは、円板状基板の円周に内接する
正方形の形状であることが最も好ましい。モジュール化
のための配線は、銅リボン線の熱圧着等の公知の方法に
よって容易に行うことができる。The rectangular cells and sector cells obtained in this manner are assembled and integrated by a known method to form a larger module (see FIG. 1). In the case of modularization, it is preferable that no extra space besides the space for wiring be created between cells to be arranged. Most suitable square cells are most preferably in the shape of a square inscribed in the circumference of the disk-shaped substrate. Wiring for modularization can be easily performed by a known method such as thermocompression bonding of a copper ribbon wire.
【００１０】[0010]
【発明の効果】本発明によれば、単結晶シリコン基板を
丸形のまま使用して全面にセルを作製し、最後に、内部
は完全な角形に、周辺は扇形に裁断するので、単結晶シ
リコン材料の損失がなく、モジュールに配列する際の面
積損失も減少する。従って、従来、歩留りを少しでも良
くするために疑似角形セルとしていた場合に比べ、モジ
ュールするときの配列に無駄がなく、小型で効率の良い
単結晶シリコン太陽電池を安価に提供することが可能と
なった。According to the present invention, a single-crystal silicon substrate is used in a round shape to form a cell over the entire surface, and finally, the inside is cut into a perfect square and the periphery is cut into a fan shape. There is no loss of silicon material and area loss when arranging in modules is also reduced. Therefore, it is possible to provide a small-sized and efficient single-crystal silicon solar cell at low cost without waste in the arrangement when modules are compared with the case where a conventional pseudo-square cell is used to improve the yield even slightly. became.
【００１１】[0011]
【実施例】以下、実施例によって本発明を更に詳述する
が、本発明はこれによって限定されるものではない。EXAMPLES The present invention will be described in more detail with reference to the following Examples, but it should not be construed that the present invention is limited thereto.
【００１２】実施例１及び比較例１〜３．直径８インチ
のＣＺ単結晶シリコン基板（伝導型；Ｐ型、電気抵抗；
（Ω・ｃｍ）、基板厚；４００（μｍ））を丸形のまま
で準備し、スライス時の表面歪み層除去及びテキスチャ
ー加工を目的として、ＫＯＨアルカリ溶液による異方性
エッチングを行い、その後、ＲＣＡ洗浄及び温水引き上
げ乾燥を行った。次にシリコン基板の表面にＰ2Ｏ5を含
んだ有機シリカ化合物の塗布剤をスピンコート法で塗布
し、１２０℃で１０分間乾燥して、リンドープ有機シリ
カ塗布層を形成させた。Example 1 and Comparative Examples 1-3. 8 inch diameter CZ single crystal silicon substrate (conductivity type; P type, electric resistance;
(Ω · cm), substrate thickness; 400 (μm)) are prepared in a round shape, and anisotropic etching with a KOH alkaline solution is performed for the purpose of removing a surface strain layer during slicing and texturing. RCA washing and warm water pull-up drying were performed. Next, a coating agent of an organic silica compound containing P 2 O 5 was applied on the surface of the silicon substrate by spin coating, and dried at 120 ° C. for 10 minutes to form a phosphorus-doped organic silica coating layer.
【００１３】上記シリコン基板を近赤外線ランプベルト
炉に通して、９５０℃で１０分間ドライブイン拡散さ
せ、接合（ｎ＋）形成を行わせた。表面に形成された不
要なリンガラス層を、ＨＦ溶液を用いて除去した後、シ
リコンのＲＣＡ洗浄及び温水引き上げ乾燥を行い、更
に、ドライ酸化法により、表面パッシベーション膜とし
て熱酸化膜を形成させた。The silicon substrate was passed through a near-infrared lamp belt furnace and diffused in at 950 ° C. for 10 minutes to form a bond (n +). Unnecessary phosphorus glass layer formed on the surface was removed using an HF solution, and then RCA cleaning and hot water drying of silicon were performed. Further, a thermal oxide film was formed as a surface passivation film by a dry oxidation method. .
【００１４】次に、表面に、常圧ＣＶＤでＴｉＯ2反射
防止膜を形成させた後、裏面に、スクリーン印刷によっ
てアルミニウムペーストを全面に印刷し、乾燥させた後
近赤外線ランプベルト炉に通し、７５０℃で５分間焼成
することにより、裏面電界層を形成させた。Next, after forming a TiO 2 anti-reflection film on the front surface by atmospheric pressure CVD, an aluminum paste is printed on the entire back surface by screen printing, dried and passed through a near infrared lamp belt furnace. By firing at 750 ° C. for 5 minutes, a back surface electric field layer was formed.
【００１５】なお、表面の銀電極については、ＴｉＯ2
反射防止膜及びＳｉＯ2表面熱酸化膜をファイヤースル
ーすることにより電気的接触が得られるように、ペース
ト成分並びに焼成条件を最適化した。次いで電極部の抵
抗低減及び太陽電池セル間の接続を目的として、両面銀
電極上にＡｇ／Ｓｎ／Ｐｂのハンダコートを行った。こ
のようにして丸形のＣＺ単結晶シリコン基板上全面にセ
ルを作製した後に、ダイサーにより、図１のように、内
部から１４（ｃｍ）角の完全な角形セル１枚と、周辺の
扇形セル４枚を切り出し、角形及び扇形セルを別々にモ
ジュール配線した。The silver electrode on the surface is made of TiO 2
The paste components and firing conditions were optimized so that electrical contact could be obtained by fire-through the anti-reflection film and the SiO 2 surface thermal oxide film. Next, Ag / Sn / Pb solder coating was performed on the double-sided silver electrode for the purpose of reducing the resistance of the electrode portion and connecting the solar cells. After forming cells on the entire surface of the round CZ single-crystal silicon substrate in this way, as shown in FIG. 1, one complete square cell of 14 (cm) square from the inside and a peripheral fan cell Four pieces were cut out, and square and sector cells were separately module-wired.
【００１６】上記の方法で作製されたセル及びモジュー
ルそれぞれの効率をソーラーシミュレーター（ＡＭ１．
５，２５℃、１００（ｍＷ／ｃｍ2）で測定したとこ
ろ、表１に示す結果が得られた。また、比較例１として
図２に示す従来の単結晶シリコン疑似角形基板比較例２
として単結晶丸形基板、及び、比較例３として多結晶シ
リコン角形基板を使用して同様に作製した、セル及びモ
ジュールについてもそれぞれ測定し、その結果を表１に
併記した。The efficiency of each of the cell and the module manufactured by the above method was measured using a solar simulator (AM1.
Measurement was performed at 5, 25 ° C. and 100 (mW / cm 2 ), and the results shown in Table 1 were obtained. In addition, as a comparative example 1, a comparative example 2 of the conventional single-crystal silicon pseudo-square substrate shown in FIG.
, And a cell and a module similarly manufactured using a polycrystalline silicon square substrate as Comparative Example 3 were also measured, and the results are also shown in Table 1.
【００１７】[0017]
【表１】 表１の結果から、同一面積のモジュール面積で比較する
と、セルの並び方に無駄のない本願発明の効果が明らか
である。[Table 1] From the results in Table 1, it is clear that the effects of the present invention without waste in the arrangement of cells are compared when the module areas have the same area.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明の、丸形単結晶シリコン基板を使用した
太陽電池の一連の製作方法の一例である。FIG. 1 is an example of a series of manufacturing methods of a solar cell using a round single crystal silicon substrate according to the present invention.
【図２】比較例１の疑似角形単結晶シリコン基板を使用
した太陽電池の一連の製作方法の一例である。FIG. 2 is an example of a series of manufacturing methods of a solar cell using a pseudo-rectangular single-crystal silicon substrate of Comparative Example 1.
Claims (4)
得た円板状の単結晶シリコン基板の全面に太陽電池のセ
ルを作製し、次いで裁断することを特徴とする、単結晶
シリコン太陽電池の作製方法。1. A method for producing a single-crystal silicon solar cell, comprising: producing a solar cell on the entire surface of a disk-shaped single-crystal silicon substrate obtained by slicing a single-crystal silicon ingot; and cutting the solar cell. Method.
はフローティングゾーン法により作製された単結晶シリ
コンである、請求項１に記載された単結晶シリコン太陽
電池の作製方法。2. The method for manufacturing a single-crystal silicon solar cell according to claim 1, wherein the single-crystal silicon is single-crystal silicon manufactured by a Czochralski method or a floating zone method.
のセルを作製した後角形セルと扇形セルとに分割する如
く裁断する、請求項１又は２に記載された単結晶シリコ
ン太陽電池の作製方法。3. The single-crystal silicon solar cell according to claim 1, wherein a solar cell is prepared so as to be divided into a square portion and a sector portion, and then cut so as to be divided into a square cell and a sector cell. Method of manufacturing.
ルを複数枚使用してモジュール化することを特徴とす
る、太陽電池モジュールの製造方法。4. A method for manufacturing a solar cell module, comprising using a plurality of square cells or sector cells according to claim 3 to form a module.
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|---|---|---|---|
| JP11025598A JP3617923B2 (en) | 1998-04-06 | 1998-04-06 | Single-crystal silicon solar cell and module manufacturing method |
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|---|---|---|---|
| JP11025598A JP3617923B2 (en) | 1998-04-06 | 1998-04-06 | Single-crystal silicon solar cell and module manufacturing method |
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| JP3617923B2 JP3617923B2 (en) | 2005-02-09 |
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