WO2013047107A1 - 発光素子及びその製造方法 - Google Patents

発光素子及びその製造方法 Download PDF

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Publication number
WO2013047107A1
WO2013047107A1 PCT/JP2012/072448 JP2012072448W WO2013047107A1 WO 2013047107 A1 WO2013047107 A1 WO 2013047107A1 JP 2012072448 W JP2012072448 W JP 2012072448W WO 2013047107 A1 WO2013047107 A1 WO 2013047107A1
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Prior art keywords
layer
compound semiconductor
light
light guide
light emitting
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English (en)
French (fr)
Japanese (ja)
Inventor
大 倉本
倫太郎 幸田
秀輝 渡邊
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Sony Corp
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Sony Corp
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Priority to US14/345,289 priority Critical patent/US9025631B2/en
Priority to CN201280045924.2A priority patent/CN103828147A/zh
Publication of WO2013047107A1 publication Critical patent/WO2013047107A1/ja
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    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
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    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
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    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Definitions

  • the present disclosure relates to a light emitting element and a manufacturing method thereof.
  • semiconductor optical amplifiers semiconductor-Optical-Amplifier, SOA
  • SOA semiconductor-Optical-Amplifier
  • the optical amplifier does not convert an optical signal into an electric signal, but amplifies it in a direct light state, has a laser structure without a resonator, and amplifies incident light with the optical gain of the amplifier.
  • a 1.5 ⁇ m band semiconductor optical amplifier using a GaInAsP-based compound semiconductor and having a tapered ridge stripe structure is known from, for example, Japanese Patent Laid-Open No. 5-067845.
  • the optical waveguide width is gradually increased in a tapered shape from a narrow input-side optical waveguide that satisfies a single mode condition to an output-side optical waveguide.
  • the mode field is expanded according to the width of the optical waveguide to increase the maximum output of the semiconductor optical amplifier.
  • a semiconductor laser device or a semiconductor optical amplifier has a laminated structure formed on a base.
  • the laminated structure is usually an n-type compound semiconductor layer doped with an n-type impurity (specifically, an n-type cladding layer and an n-type light guide layer), an active layer, and a p-type impurity from the substrate side.
  • Is doped with a p-type compound semiconductor layer specifically, a p-type light guide layer and a p-type clad layer).
  • One means for achieving higher output of the semiconductor laser device and the semiconductor optical amplifier is to lower the optical confinement factor.
  • the thickness of the n-type light guide layer made of an n-type compound semiconductor may be increased, and thereby the light field intensity distribution can be reduced.
  • the peak moves from the active layer to the n-type light guide layer.
  • the optical confinement factor can be reduced, the optical density in the vicinity of the active layer can be reduced during high output operation, optical damage can be prevented, and particularly in a semiconductor optical amplifier, The saturation energy of the amplified light is increased, and high output can be achieved.
  • the horizontal axis represents the thickness (unit: nm) of the n-type light guide layer
  • the vertical axis represents the light confinement coefficient.
  • the horizontal axis represents the thickness (unit: nm) of the n-type light guide layer
  • the vertical axis represents the full width at half maximum (FWHM, Full) of the far field pattern (FFP, far field image). Width at Half Maximum) and the unit is “degree”.
  • the light beam is not in a single mode but has a multi-beam shape.
  • the reason why the light beam is not single mode is considered to be because it is out of the single mode cutoff condition in the thickness direction of the compound semiconductor layer. It is done. In this way, when the light beam is not in a single mode, in applications using a lens or an optical fiber, adverse effects such as deterioration of light collection characteristics may occur.
  • a light-emitting element such as a high-power semiconductor laser element or a semiconductor optical amplifier that can emit a light beam having a single mode, and a manufacturing method thereof.
  • a light emitting device includes: A first compound semiconductor layer having a first conductivity type, an active layer made of a compound semiconductor, and a second compound semiconductor layer having a second conductivity type different from the first conductivity type are sequentially stacked on a substrate.
  • a light emitting device comprising: The first compound semiconductor layer has a laminated structure of a first cladding layer and a first light guide layer from the substrate side, The laminated structure has a ridge stripe structure composed of a part of the second compound semiconductor layer, the active layer, and the first light guide layer in the thickness direction, When the thickness of the first light guide layer is t 1 and the thickness of the first light guide layer constituting the ridge stripe structure is t 1 ′, 6 ⁇ 10 ⁇ 7 m ⁇ t 1 Preferably, 8 ⁇ 10 ⁇ 7 m ⁇ t 1 Satisfied, 0 (m) ⁇ t 1 ′ ⁇ 0.5 ⁇ t 1 Preferably, 0 (m) ⁇ t 1 ′ ⁇ 0.3 ⁇ t 1 Satisfied.
  • the width of the ridge stripe structure (for example, the width of the ridge stripe structure at the light emitting end face) is W, 0.2 ⁇ W ⁇ t 1 ⁇ 1.2 ⁇ W Preferably, 0.2 ⁇ W ⁇ t 1 ⁇ W It is preferable to satisfy this relationship. The same applies to the following.
  • a first method for manufacturing a light emitting device includes: A stacked structure in which a first compound semiconductor layer having a first conductivity type, an active layer made of a compound semiconductor, and a second compound semiconductor layer having a second conductivity type different from the first conductivity type are sequentially stacked.
  • the second compound semiconductor layer and the active layer are etched based on the dry etching method, and further, the first compound semiconductor layer is partially etched in the thickness direction based on the dry etching method to form a ridge stripe structure, Immersing the etched portion in an acidic or alkaline solution,
  • the first compound semiconductor layer has a laminated structure of a first cladding layer and a first light guide layer from the substrate side,
  • the ridge stripe structure is composed of a part of the second compound semiconductor layer, the active layer, and the first light guide layer in the thickness direction,
  • 6 ⁇ 10 ⁇ 7 m ⁇ t 1 Preferably, 8 ⁇ 10 ⁇ 7 m ⁇ t 1 Satisfied, 0 (m) ⁇ t 1 ′ ⁇ 0.5 ⁇ t 1
  • 0 (m) ⁇ t 1 ′ 0 (m) ⁇ t 1 ′
  • a second method for manufacturing a light emitting device includes: After forming two recesses extending in the axial direction of the light emitting element to be manufactured on the substrate and obtaining a region of the substrate sandwiched between the two recesses, A stacked structure in which a first compound semiconductor layer having a first conductivity type, an active layer made of a compound semiconductor, and a second compound semiconductor layer having a second conductivity type different from the first conductivity type are sequentially stacked.
  • the first compound semiconductor layer has a laminated structure of a first cladding layer and a first light guide layer from the substrate side,
  • T Total the total thickness of the laminated structure
  • D the depth of the recesses
  • 6 ⁇ 10 ⁇ 7 m ⁇ t 1 Preferably, 8 ⁇ 10 ⁇ 7 m ⁇ t 1 Satisfied, (T Total -0.5 ⁇ t 1 ) ⁇ D ⁇ T Total
  • a third method for manufacturing a light emitting device includes: After forming the first portion of the first compound semiconductor layer having the first conductivity type on the substrate, Forming a growth-inhibiting layer on the first portion of the first compound semiconductor layer, exposing the region of the first portion of the first compound semiconductor layer to form the ridge stripe structure; On the first portion of the first compound semiconductor layer exposed at the bottom of the opening, the second portion of the first compound semiconductor layer, the active layer made of the compound semiconductor, and the second conductivity different from the first conductivity type A step of forming a stacked structure in which second compound semiconductor layers having a type are sequentially stacked; The first portion of the first compound semiconductor layer has a laminated structure of the first portion of the first cladding layer and the first light guide layer from the substrate side, and the second portion of the first compound semiconductor layer is Consisting of the second part of the first light guide layer, When the total thickness of the first portion of the first light guide layer and the second portion of the first light guide layer is t 1 , and
  • the thickness t 1 of the first light guide layer is defined
  • the thickness t 1 of the first light guide layer on the region of the substrate sandwiched between the two recesses is defined, and one embodiment of the present disclosure
  • the total thickness t 1 of the first portion and the second portion of the first light guide layer is defined.
  • the light confinement factor can be lowered, and the peak of the light field intensity distribution moves from the active layer to the first light guide layer, and as a result, the light density in the vicinity of the active layer is reduced during high output operation.
  • the saturation energy of amplified light is increased, and high output can be achieved.
  • the thickness t 1 of the portion of the first light guide layer constituting the ridge stripe structure is not only can optical damage be prevented, but particularly in a semiconductor optical amplifier, the saturation energy of amplified light is increased, and high output can be achieved.
  • the depth D of the recess is defined, and the third method of the light emitting device according to an embodiment of the present disclosure is defined.
  • the thickness t 1 ′ of the second portion of the first light guide layer is defined. Accordingly, it is possible to achieve a single mode of the emitted light beam.
  • the slab waveguide width being equal to the thickness of the first light guide layer, a light beam cross-sectional shape close to a perfect circle can be obtained, and the light collection characteristics deteriorate in applications using lenses and optical fibers. This does not cause any negative effects.
  • the second compound semiconductor layer, the active layer, and the first compound semiconductor layer are etched based on a dry etching method. Etching damage may occur in the layer, but etching damage can be removed by immersing the etched part in an acidic or alkaline solution, and a laminated structure having high quality and reliability can be obtained. Can do.
  • FIG. 1 is a schematic partial cross-sectional view of the light emitting element of Example 1 when cut along a virtual plane perpendicular to the axis of the light emitting element.
  • 2A and 2B are conceptual diagrams of a semiconductor laser device assembly including the light emitting element of Example 1.
  • FIG. FIGS. 3A, 3 ⁇ / b> B, and 3 ⁇ / b> C are conceptual diagrams of another semiconductor laser device assembly including the light emitting element of the first embodiment.
  • 4A is a graph showing the relationship between the current flowing from the second electrode to the first electrode and the light output in the light emitting device of Example 1, and FIGS. 4B and 4C.
  • (D) are photographs of a light beam obtained when a current is passed from the second electrode to the first electrode.
  • FIGS. 1 is a schematic partial cross-sectional view of the light emitting element of Example 1 when cut along a virtual plane perpendicular to the axis of the light emitting element.
  • 2A and 2B are conceptual diagrams
  • FIG. 5A and 5B are schematic partial cross-sectional views of a substrate and the like taken along a virtual plane perpendicular to the axis of the light-emitting element, for explaining the method for manufacturing the light-emitting element of Example 1.
  • FIG. 6 (A) and 6 (B) are views taken after cutting along a virtual plane perpendicular to the axis of the light emitting element for explaining the method for manufacturing the light emitting element of Example 1, following FIG. 5 (B). It is typical partial sectional drawing of a base
  • FIGS. 8A and 8B are schematic partial cross-sectional views of a substrate and the like when cut along a virtual plane perpendicular to the axis of the light-emitting element, for explaining the method for manufacturing the light-emitting element of Example 3.
  • FIG. 8A and 8B are schematic partial cross-sectional views of a substrate and the like when cut along a virtual plane perpendicular to the axis of the light-emitting element, for explaining the method for manufacturing the light-emitting element of Example 3.
  • FIG. 10 is a conceptual diagram of an optical output device including a semiconductor optical amplifier which is a light emitting element of Example 4.
  • FIG. 11 is a graph showing the relationship between the current flowing from the second electrode to the first electrode and the light output in the light emitting device of Example 4.
  • FIG. 12 is a schematic partial cross-sectional view of the light-emitting element of Example 5 when cut along a virtual plane perpendicular to the axis of the light-emitting element.
  • FIGS. 13A and 13B show the relationship between the thickness of the n-type light guide layer and the optical confinement factor constituting the semiconductor laser element or the semiconductor optical amplifier, and the thickness of the n-type light guide layer, respectively. It is a graph which shows the relationship with the full width at half maximum of a far field pattern.
  • FIG. 14 is a near-field image showing that in the conventional semiconductor laser device, when the thickness of the n-type light guide layer exceeds 0.6 ⁇ m, the light beam is not in a single mode but has a multi-beam shape. It is.
  • Example 1 Description of the light-emitting element of the present disclosure, the method for manufacturing the light-emitting element according to the first to third aspects of the present disclosure, and general Example 1 (light-emitting element of the present disclosure, first manufacturing method of the light-emitting element of the present disclosure) 3.
  • Example 2 Light Emitting Element of Present Disclosure, Second Manufacturing Method of Light Emitting Element of Present Disclosure
  • Example 3 Light Emitting Element of the Present Disclosure, Third Manufacturing Method of Light Emitting Element of the Present Disclosure
  • Example 4 Modification of Examples 1 to 3) 6).
  • Example 5 modification of Examples 1 to 4), other
  • the growth inhibition layer is, for example, at least one kind selected from the group consisting of SiO 2 , Al 2 O 3 , AlN, ZrO 2 , Ta 2 O 5 and AlGaInN. It is preferable that it is composed of a material layer.
  • t 1 ⁇ 3 ⁇ 10 ⁇ 6 m It is desirable to satisfy If crystal growth is performed with the thickness t 1 of the first guide layer being 3 ⁇ 10 ⁇ 6 m or less, the crystal growth surface morphology is not roughened, and the light emission characteristics and electrical characteristics of the light emitting device are prevented from deteriorating. obtain.
  • the light emitting element in the first to third manufacturing methods of the light emitting element of the present disclosure including the various preferable embodiments described above, or in the light emitting element of the present disclosure, the light emitting element emits a single mode light beam. It can be.
  • the light-emitting element in the first to third manufacturing methods of the light-emitting element of the present disclosure including the various preferable embodiments described above or the light-emitting element of the present disclosure
  • the light emitted from the light-emitting end surface of the laminated structure When the dimension in the width direction of the ridge stripe structure of the beam is LB X and the dimension in the thickness direction of the ridge stripe structure is LB Y , 0.2 ⁇ LB Y / LB X ⁇ 1.2
  • the light emitting end surface of the multilayer structure includes: The distance Y CC from the active layer center point in the stacked structure to the center point of the light beam emitted from the stacked structure along the thickness direction of the ridge stripe structure is t 1 ′ ⁇ Y CC ⁇ t 1 Preferably, t 1 ′ ⁇ Y CC ⁇ 0.5 ⁇ t 1 It is desirable to satisfy
  • a semiconductor laser element is configured from the light-emitting elements. be able to.
  • a semiconductor optical amplifier SOA
  • the light intensity of the incident light beam can be amplified by 20 times or more and emitted.
  • the first light guide layer includes the first light guide layer. It can be set as the structure by which the high refractive index layer which consists of a compound semiconductor material which has a refractive index higher than the refractive index of the compound semiconductor material which comprises a guide layer is formed.
  • the refractive index of the compound semiconductor material constituting the first light guide layer is n G ⁇ 1
  • the refractive index of the compound semiconductor material constituting the high refractive index layer is n HR .
  • 0.01 ⁇ n HR ⁇ n G ⁇ 1 ⁇ 0.1 Preferably, 0.03 ⁇ n HR ⁇ n G ⁇ 1 ⁇ 0.1 Can be obtained.
  • the average refractive index of the compound semiconductor material constituting the active layer is n Ac , n HR ⁇ n Ac Is preferably satisfied.
  • the second compound semiconductor layer is formed from the substrate side.
  • the second light guide layer and the second cladding layer have a laminated structure, and the first light guide layer can be thicker than the second light guide layer.
  • the first compound semiconductor layer, the active layer, and The second compound semiconductor layer can be made of a GaN-based compound semiconductor.
  • the laminated structure can be made of an AlGaInN-based compound semiconductor.
  • the high refractive index layer can also be made of an AlGaInN-based compound semiconductor.
  • examples of the AlGaInN-based compound semiconductor include GaN, AlGaN, GaInN, and AlGaInN.
  • these compound semiconductors may contain boron (B) atoms, thallium (Tl) atoms, arsenic (As) atoms, phosphorus (P) atoms, and antimony (Sb) atoms as desired.
  • the active layer has, for example, a quantum well structure. Specifically, it may have a single quantum well structure [QW structure] or a multiple quantum well structure [MQW structure].
  • An active layer having a quantum well structure has a structure in which at least one well layer and a barrier layer are stacked, but as a combination of (a compound semiconductor constituting a well layer, a compound semiconductor constituting a barrier layer), (In y Ga (1-y) N, GaN), (In y Ga (1-y) N, In z Ga (1-z) N) [where y> z], (In y Ga (1- y) N, AlGaN).
  • the axis of the light emitting element and the axis of the ridge stripe structure may intersect at a predetermined angle.
  • the predetermined angle ⁇ include 0.1 degrees ⁇ ⁇ ⁇ 10 degrees.
  • the axis of the ridge stripe structure is the bisector of both ends of the ridge stripe structure on the light exit end face (sometimes referred to as “second end face” for convenience) and the opposite side of the light exit end face (second end face)
  • the straight line connecting the bisectors at both ends of the ridge stripe structure on the end face of the laminated structure (sometimes referred to as “first end face” for convenience).
  • the axis of the light emitting element refers to an axis orthogonal to the first end surface and the second end surface.
  • W 2 when the width of the ridge stripe structure on the second end face is W 2 and the width of the ridge stripe structure on the first end face is W 1 , W 2 > W 1 is satisfied. can do.
  • W 2 may be 5 ⁇ m or more, and the upper limit value of W 2 is not limited. For example, 4 ⁇ 10 2 ⁇ m can be exemplified. Further, W 1 may be 1.4 ⁇ m to 2.0 ⁇ m.
  • Each end of the ridge stripe structure may be composed of one line segment, or may be composed of two or more line segments.
  • the width of the ridge stripe structure can be configured to be monotonously and gradually widened in a tapered shape from the first end face to the second end face.
  • the width of the ridge stripe structure is, for example, the same width from the first end face toward the second end face, and then monotonously and gently widened in a tapered shape, or alternatively, the ridge stripe structure.
  • the width of the structure may be, for example, first widened from the first end face toward the second end face, and then narrowed after exceeding the maximum width.
  • a laser light source that generates laser light to be incident on the semiconductor optical amplifier is composed of a mode-locked semiconductor laser element, and pulsed laser light emitted from the mode-locked semiconductor laser element is a semiconductor.
  • the laser light source can be configured to emit pulsed laser light based on a mode-locking operation.
  • the mode-locked semiconductor laser element can be composed of the light-emitting element of the present disclosure.
  • the laser light source is not limited to such a form, and known pulse oscillations of various methods and types including a well-known continuous-wave laser light source, a gain switching method, a loss switching method (Q switching method), and the like.
  • a laser light source such as a type laser light source or a titanium sapphire laser can also be used.
  • the semiconductor optical amplifier does not convert an optical signal into an electric signal, but amplifies it in the state of direct light, has a laser structure that eliminates the resonator effect as much as possible, and has an incident light with the optical gain of the semiconductor optical amplifier. Amplify.
  • the light intensity density of the laser light output from the semiconductor optical amplifier is not limited, but is 60 kW per 1 cm 2 of the active layer constituting the light emitting end face. As mentioned above, it can be set as the structure which is preferably 600 kilowatts or more. Further, the semiconductor optical amplifier can be configured as a transmissive semiconductor optical amplifier, but is not limited to this, for example, a monolithic type in which a semiconductor laser element and a semiconductor optical amplifier are integrated. It is also possible to adopt a configuration comprising a semiconductor optical amplifier.
  • the semiconductor laser element may further include an external mirror (external reflecting mirror). That is, an external resonator type semiconductor laser element can be obtained. Alternatively, it may be a monolithic semiconductor laser element.
  • the external resonator type semiconductor laser element may be a condensing type or a collimating type. In the external resonator type semiconductor laser element, it is preferable that the light reflectivity of one end face of the laminated structure from which the light beam (light pulse) is emitted is 0.5% or less.
  • the value of the light reflectance is much lower than the light reflectance (usually 5% to 10%) of one end face of the laminated structure from which the light beam (light pulse) is emitted in the conventional semiconductor laser element. Value.
  • the value of the external resonator length (Z ′, unit: mm) is 0 ⁇ Z ' ⁇ 1500 Preferably, 30 ⁇ Z ′ ⁇ 150 It is desirable that
  • a low reflection coating layer can be formed on at least the second end face.
  • a semiconductor optical amplifier is constituted by the light emitting element or the like of the present disclosure
  • a low reflection coating layer can be formed on the first end face and the second end face.
  • the low reflection coating layer has, for example, a laminated structure of at least two kinds of layers selected from the group consisting of a titanium oxide layer, a tantalum oxide layer, a zirconia oxide layer, a silicon oxide layer, and an aluminum oxide layer.
  • the second electrode is formed on the second compound semiconductor layer.
  • the second electrode is a palladium (Pd) single layer, a nickel (Ni) single layer, a platinum (Pt) single layer, a palladium layer / platinum layer laminated structure in which the palladium layer is in contact with the second compound semiconductor layer, or
  • the palladium layer may have a laminated structure of a palladium layer / nickel layer in contact with the second compound semiconductor layer.
  • the thickness of the upper metal layer is desirably 0.1 ⁇ m or more, preferably 0.2 ⁇ m or more.
  • the second electrode is preferably composed of a single layer of palladium (Pd).
  • the thickness is preferably 20 nm or more, and preferably 50 nm or more.
  • the width of the second electrode may be appropriately determined from the width of the stripe structure.
  • the first electrode electrically connected to the first compound semiconductor layer having the n-type conductivity type is gold (Au), silver (Ag), palladium (Pd), A single element comprising at least one metal selected from the group consisting of Al (aluminum), Ti (titanium), tungsten (W), Cu (copper), Zn (zinc), tin (Sn), and indium (In). It is desirable to have a layer structure or a multilayer structure, and examples thereof include Ti / Au, Ti / Al, and Ti / Pt / Au.
  • the first electrode is electrically connected to the first compound semiconductor layer.
  • the first electrode is formed on the first compound semiconductor layer, and the first electrode is interposed through a conductive material layer or a conductive substrate. A form connected to the first compound semiconductor layer is included.
  • the first electrode and the second electrode can be formed by, for example, a PVD method such as a vacuum evaporation method or a sputtering method.
  • a pad electrode may be provided on the first electrode or the second electrode for electrical connection with an external electrode or circuit.
  • the pad electrode has a single-layer configuration or a multi-layer configuration including at least one metal selected from the group consisting of Ti (titanium), aluminum (Al), Pt (platinum), Au (gold), and Ni (nickel). It is desirable to have.
  • the pad electrode may have a multilayer configuration exemplified by a multilayer configuration of Ti / Pt / Au and a multilayer configuration of Ti / Au.
  • the second compound semiconductor layer has a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked; the thickness of the superlattice structure is 0.7 ⁇ m or less. It can be set as the structure which is. By adopting such a superlattice structure, the series resistance component of the light emitting element can be lowered while maintaining the refractive index required for the cladding layer, leading to a lower operating voltage of the light emitting element.
  • the lower limit value of the thickness of the superlattice structure is not limited, but for example, 0.3 ⁇ m can be mentioned, and the thickness of the p-type GaN layer constituting the superlattice structure is 1 nm to 5 nm.
  • the thickness of the p-type AlGaN layer constituting the superlattice structure can be 1 to 5 nm, and the total number of the p-type GaN layer and the p-type AlGaN layer can be 60 to 300 layers can be exemplified.
  • the distance from the active layer to the second electrode may be 1 ⁇ m or less, preferably 0.6 ⁇ m or less.
  • the thickness of the p-type second compound semiconductor layer having high resistance can be reduced, and the operating voltage of the light emitting element can be reduced.
  • the second compound semiconductor layer is doped with Mg of 1 ⁇ 10 19 cm ⁇ 3 or more; the absorption coefficient of the second compound semiconductor layer with respect to light having a wavelength of 405 nm from the active layer is at least 50 cm ⁇ 1. It can be set as the structure which is.
  • the atomic concentration of Mg is derived from the material physical property of showing the maximum hole concentration at a value of 2 ⁇ 10 19 cm ⁇ 3 , and the maximum hole concentration, that is, the specific resistance of the second compound semiconductor layer. This is a result designed to minimize.
  • the absorption coefficient of the second compound semiconductor layer is defined from the viewpoint of reducing the resistance of the light emitting element as much as possible, and as a result, the light absorption coefficient of the active layer is generally 50 cm ⁇ 1. It is. However, in order to increase the absorption coefficient, the Mg doping amount can be intentionally set to a concentration of 2 ⁇ 10 19 cm ⁇ 3 or more.
  • the upper limit Mg doping amount for obtaining a practical hole concentration is, for example, 8 ⁇ 10 19 cm ⁇ 3 .
  • the second compound semiconductor layer has a non-doped compound semiconductor layer and a p-type compound semiconductor layer from the active layer side; the distance from the active layer to the p-type compound semiconductor layer is 1.2 ⁇ 10 -7 m or less.
  • the lower limit value of the distance from the active layer to the p-type compound semiconductor layer is not limited, but may be 5 ⁇ 10 ⁇ 8 m, for example.
  • a laminated insulating film having a SiO 2 / Si laminated structure is formed on both side surfaces of the ridge stripe structure; the difference between the effective refractive index of the ridge stripe structure and the effective refractive index of the laminated insulating film is 5 ⁇
  • the configuration may be 10 ⁇ 3 to 1 ⁇ 10 ⁇ 2 .
  • the band gap of the compound semiconductor constituting the well layer in the active layer is desirably 2.4 eV or more. Further, the wavelength of light emitted from the active layer is desirably 360 nm to 500 nm, preferably 400 nm to 410 nm.
  • the various configurations described above can be appropriately combined.
  • a non-doped compound semiconductor layer (for example, a non-doped GaInN layer or a non-doped AlGaN layer) may be formed between the active layer and the electron barrier layer. Furthermore, a non-doped GaInN layer as a light guide layer may be formed between the active layer and the non-doped compound semiconductor layer.
  • the uppermost layer of the second compound semiconductor layer may be structured to be occupied by the Mg-doped GaN layer (p-side contact layer).
  • Various compound semiconductor layers (for example, GaN-based compound semiconductor layers) constituting the light-emitting element of the present disclosure are sequentially formed on a base.
  • a GaAs substrate, a GaN substrate, SiC substrate, alumina substrate, ZnS substrate, ZnO substrate, AlN substrate, LiMgO substrate, LiGaO 2 substrate, MgAl 2 O 4 substrate, InP substrate, Si substrate, and a base layer and a buffer layer on the surface (main surface) of these substrates The formed can be mentioned.
  • the GaN substrate is preferred because of its low defect density, but it is known that the characteristics of the GaN substrate change from polar / nonpolar / semipolar depending on the growth surface. ing.
  • a metal organic chemical vapor deposition method MOCVD method, MOVPE method
  • a molecular beam epitaxy method is used as a method for forming various compound semiconductor layers (for example, GaN-based compound semiconductor layers) constituting the light emitting device of the present disclosure.
  • MOCVD method metal organic chemical vapor deposition method
  • MOVPE method MOVPE method
  • MBE method molecular beam epitaxy method
  • trimethylgallium (TMG) gas and triethylgallium (TEG) gas can be exemplified as the organic gallium source gas in the MOCVD method, and ammonia gas and hydrazine gas can be exemplified as the nitrogen source gas.
  • silicon (Si) may be added as an n-type impurity (n-type dopant), or a GaN-based compound having a p-type conductivity.
  • magnesium (Mg) may be added as a p-type impurity (p-type dopant).
  • trimethylaluminum (TMA) gas may be used as the Al source, and trimethylindium (TMI) gas is used as the In source. Use it.
  • monosilane gas (SiH 4 gas) may be used as the Si source, and cyclopentadienyl magnesium gas, methylcyclopentadienyl magnesium, or biscyclopentadienyl magnesium (Cp 2 Mg) may be used as the Mg source.
  • examples of n-type impurities (n-type dopants) include Ge, Se, Sn, C, Te, S, O, Pd, and Po.
  • p-type impurities (p-type dopants) In addition to Mg, Zn, Cd, Be, Ca, Ba, C, Hg, and Sr can be mentioned.
  • the dry etching method in the first manufacturing method of the light emitting element of the present disclosure can be a known dry etching method.
  • phosphoric acid, hydrofluoric acid, and aqua regia can be illustrated as an acidic solution
  • sodium hydroxide and potassium hydroxide can be illustrated as an alkaline solution.
  • the light-emitting element of the present disclosure can be applied to, for example, an optical disc system, a communication field, an optical information field, an optoelectronic integrated circuit, a field applying a nonlinear optical phenomenon, an optical switch, a laser measurement field, various analysis fields, an ultrafast spectroscopy field, Photon excitation spectroscopy field, mass spectrometry field, field of microspectroscopy using multiphoton absorption, quantum control of chemical reaction, nano 3D processing field, various processing fields applying multiphoton absorption, medical field, bioimaging field, etc. Can be applied in the field.
  • Example 1 relates to a light emitting device of the present disclosure and a first manufacturing method of the light emitting device of the present disclosure.
  • the light-emitting element of Example 1 is specifically a semiconductor laser element, and a schematic partial cross-sectional view taken along a virtual plane perpendicular to the axis of the light-emitting element is shown in FIG.
  • the first compound semiconductor layer 21 has a laminated structure of a first cladding layer (n-type AlGaN layer) 121A and a first light guide layer (n-type GaN layer) 121B from the substrate side.
  • 20 has a ridge stripe structure 20A composed of a second compound semiconductor layer 22, an active layer 23, and a portion 121B ′ in the thickness direction of the first light guide layer, and the thickness of the first light guide layer 121B.
  • the thickness of the first light guide layer portion 121B ′ constituting the ridge stripe structure is t 1 ′, 6 ⁇ 10 ⁇ 7 m ⁇ t 1
  • 8 ⁇ 10 ⁇ 7 m ⁇ t 1 Satisfied 0 (m) ⁇ t 1 ′ ⁇ 0.5 ⁇ t 1
  • the length and width of the ridge stripe structure 20A were 1.0 mm and 1.6 ⁇ m, respectively.
  • the light emitting element emits a single mode light beam.
  • the substrate 20 ′ is made of an n-type GaN substrate, and the compound semiconductor layer is provided on the (0001) plane of the n-type GaN substrate.
  • the (0001) plane of the n-type GaN substrate is also called a “C plane” and is a crystal plane having polarity.
  • the stacked structure 20 including the first compound semiconductor layer 21, the active layer 23, and the second compound semiconductor layer 22 is composed of a GaN-based compound semiconductor, specifically, an AlGaInN-based compound semiconductor, and more specifically.
  • Table 1 the compound semiconductor layer described below is a layer closer to the base body 20 ′.
  • the band gap of the compound semiconductor constituting the well layer in the active layer 23 is 3.06 eV.
  • the active layer 23 has a quantum well structure including a well layer and a barrier layer, and the doping concentration of impurities (specifically, silicon, Si) in the barrier layer is 2 ⁇ 10 17 cm ⁇ 3 or more, 1 ⁇ 10 20 cm ⁇ 3 or less.
  • a laminated insulating film 24 made of SiO 2 / Si is formed on both sides of the ridge stripe structure 20A.
  • the SiO 2 layer is the lower layer and the Si layer is the upper layer.
  • a second electrode (p-side ohmic electrode) 32 is formed on the p-type GaN contact layer 122D corresponding to the top surface of the ridge stripe structure 20A.
  • a first electrode (n-side ohmic electrode) 31 made of Ti / Pt / Au is formed on the back surface of the substrate 20 ′.
  • the second electrode 32 is composed of a Pd single layer having a thickness of 0.1 ⁇ m.
  • the thickness of the p-type AlGaN electron barrier layer 122A is 10 nm
  • the thickness of the second light guide layer (p-type AlGaN layer) 122B is 50 nm
  • the thickness of the second cladding layer (p-type AlGaN layer) 122C is The thickness of the p-type GaN contact layer 122D is 100 nm.
  • the p-type AlGaN electron barrier layer 122A, the second light guide layer 122B, the second cladding layer 122C, and the p-type GaN contact layer 122D constituting the second compound semiconductor layer 22 have an Mg content of 1 ⁇ 10 19 cm. ⁇ 3 or more (specifically, 2 ⁇ 10 19 cm ⁇ 3 ).
  • the thickness of the first cladding layer (n-type AlGaN layer) 121A is 2.5 ⁇ m.
  • the thickness of the first light guide layer (n-type GaN layer) 121B is as described above, and the thickness (1.25 ⁇ m) of the first light guide layer 121B is the thickness (100 nm) of the second light guide layer 122B. Thicker than.
  • the first light guide layer 121B is made of GaN.
  • the first light guide layer 121B is a compound semiconductor having a wider band gap than the active layer 23, and is more than the first cladding layer 121A. Also, it can be composed of a compound semiconductor having a narrow band gap.
  • Second compound semiconductor layer 22 p-type GaN contact layer (Mg doped) 122D Second cladding layer (p-type Al 0.05 Ga 0.95 N layer (Mg doped)) 122C Second light guide layer (p-type Al 0.01 Ga 0.99 N layer (Mg doped)) 122B p-type Al 0.20 Ga 0.80 N electron barrier layer (Mg doped) 122A Active layer 23 GaInN quantum well active layer 23 (Well layer: Ga 0.92 In 0.08 N / barrier layer: Ga 0.98 In 0.02 N) First compound semiconductor layer 21 First light guide layer (n-type GaN layer) 121B First cladding layer (n-type Al 0.03 Ga 0.97 N layer) 121A However, Well layer (2 layers): 10 nm [non-doped] Barrier layer (3 layers): 12 nm [doping concentration (Si): 2 ⁇ 10 18 cm ⁇ 3 ]
  • FIG. 4A shows the relationship between the current (unit: milliamperes) flowing from the second electrode 32 to the first electrode 31 and the light output (unit: milliwatts) in the light-emitting element of Example 1.
  • 4B, 4C, and 4D the near field of the light beam obtained when 340 mA, 520 mA, and 720 mA are passed from the second electrode 32 to the first electrode 31, respectively.
  • the photograph of an image (NFP) is shown, and the dimension (width) in the horizontal direction (width direction of the ridge stripe structure 20A) and the dimension (width) in the vertical direction (width direction of the ridge stripe structure 20A) are also shown. .
  • the dimension (width) shown is the vicinity of the light beam when the intensity is 1 / e 2 with respect to the peak intensity of the light beam emitted from the light emitting end face (second end face) of the laminated structure 20. This is the size (width) of the field image (NFP).
  • the dimension (width) in the width direction of the ridge stripe structure 20A is LB X
  • the dimension (width) in the thickness direction of the ridge stripe structure 20A is LB.
  • the value of LB Y / LB X are as follows, 0.2 ⁇ LB Y / LB X ⁇ 1.2
  • the light beam cross-sectional shape close to a perfect circle was obtained.
  • the distance Y CC is: t 1 ' ⁇ Y CC ⁇ t 1 Is satisfied. From FIG. 4A, it can be seen that the threshold current is about 200 milliamps and the light output can be obtained up to about 900 milliwatts.
  • FIG. 4B: Y CC 5 ⁇ 10 ⁇ 7 m
  • FIG. 2A A conceptual diagram of a semiconductor laser device assembly including the light emitting element of Example 1 is shown in FIG.
  • the semiconductor laser device assembly shown in FIG. 2A is an external resonator type. That is, the semiconductor laser device assembly according to the first embodiment includes the semiconductor laser element 10 including the light emitting element according to the first embodiment, the lens 12, the optical filter 13, the external mirror 14, and the lens 15.
  • the laser light emitted from the laser light source is emitted to the outside via the optical isolator 16.
  • a layer (AR) is formed.
  • a highly reflective coating layer (HR) is formed on the first end surface facing the second end surface.
  • the first end face of the semiconductor laser element and the external mirror 14 constitute an external resonator, and a light beam is extracted from the external mirror 14 as described above.
  • a band pass filter is mainly used as the optical filter 13 and is inserted for controlling the oscillation wavelength of the laser.
  • the repetition frequency f of the optical pulse train is determined by the external resonator length Z ′ and is expressed by the following equation.
  • c is the speed of light
  • n is the refractive index of the waveguide.
  • the value of the external resonator length (Z ′, unit: mm) was set to 100 mm.
  • the light reflectance of the second end face of the laminated structure 20 from which the light beam (light pulse) is emitted is 0.5% or less (for example, 0.3%), and the light beam (light pulse) is reflected.
  • the light reflectance of the first end face of the laminated structure 20 is, for example, 85% or more and less than 100% (for example, 95%).
  • the light transmittance of the optical filter 13 is, for example, 85% or more and less than 100% (for example, 90%), the full width at half maximum is more than 0 nm and 2 nm or less (for example, 1 nm), and the peak wavelength Is 400 nm or more and 450 nm or less (for example, 410 nm), and the light reflectance of the external mirror 14 is more than 0% and less than 100% (for example, 20%).
  • the values of the various parameters described above are examples and can be changed as appropriate.
  • an external resonator is constituted by the end face of the semiconductor laser element on which the highly reflective coating layer (HR) is formed and the external mirror 14. Then, the light beam is taken out from the external mirror 14.
  • an external resonator is constituted by the second end face of the semiconductor laser element and an external mirror, and a light beam is extracted from the semiconductor laser element.
  • a low reflection coating layer (AR) is formed on the second end face.
  • 3A is a condensing type
  • the example shown in FIG. 3B is a collimating type.
  • the semiconductor laser element can be a monolithic type.
  • FIGS. 5A and 5B and FIGS. 6A and 6B are schematic partial cross-sectional views of a substrate and the like. explain.
  • Step-100 First, on the base 20 ′, specifically, on the (0001) plane of the n-type GaN substrate, based on the well-known MOCVD method, has the first conductivity type (n-type) and is made of a GaN-based compound semiconductor.
  • the second compound semiconductor layer 22 is sequentially stacked to form a stacked structure 20 (see FIG. 5A).
  • the second compound semiconductor layer 22 and the active layer 23 are etched based on a dry etching method, and the first compound semiconductor layer 21 (specifically, the first light guide layer 121B) is partially removed in the thickness direction. Etching is performed based on the dry etching method to form the ridge stripe structure 20A.
  • the band-shaped second electrode 32 is formed on the second compound semiconductor layer 22. More specifically, after forming a Pd layer 32A on the entire surface based on a vacuum deposition method (see FIG. 5B), a strip-shaped etching resist layer is formed on the Pd layer 32A based on a photolithography technique. To do. Then, after removing the Pd layer 32A not covered with the etching resist layer using aqua regia, the etching resist layer is removed. Thus, the structure shown in FIG. 6A can be obtained. Note that the strip-shaped second electrode 32 may be formed on the second compound semiconductor layer 22 based on a lift-off method.
  • ER 0 / ER 1 ⁇ 1 ⁇ 10 preferably ER 0
  • the etching rate of the second electrode 32 when patterning the second electrode 32 is ER 0 and the etching rate of the laminated structure 20 is ER 1. It is desirable to satisfy 0 / ER 1 ⁇ 1 ⁇ 10 2 . When ER 0 / ER 1 satisfies such a relationship, the second electrode 32 can be reliably patterned without etching the laminated structure 20 (or even if it is etched slightly).
  • the second compound semiconductor layer 22 and the active layer 23 are etched based on the dry etching method, and further, the first compound semiconductor layer 21 is partially etched in the thickness direction.
  • the ridge stripe structure 20A is formed by etching based on the above. Specifically, based on the RIE method using Cl 2 gas, using the second electrode 32 as an etching mask, the second compound semiconductor layer 22 and the active layer 23 and a part of the first compound semiconductor layer 21 ( Specifically, a part 121B ′ of the first light guide layer 121B is obtained by etching a part of the first light guide layer 121B. Thus, the structure shown in FIG. 6B can be obtained.
  • the ridge stripe structure 20A is formed by the self-alignment method using the second electrode 32 patterned in a strip shape as an etching mask, misalignment occurs between the second electrode 32 and the ridge stripe structure 20A. There is nothing.
  • the etched portion is immersed in an acidic solution, specifically phosphoric acid.
  • an acidic solution specifically phosphoric acid.
  • Etching damage can be removed by immersing the formed portion in an acidic solution, and a laminated structure 20 having high quality and reliability can be obtained.
  • Step-130 Thereafter, the formation of the laminated insulating film 24, the removal of the laminated insulating film 24 on the second electrode 32, the formation of the first electrode 31, the cleavage of the substrate, and the like are performed, and further packaging is performed.
  • a light-emitting element can be manufactured.
  • the ridge stripe structure 20A is formed without forming the second electrode 32, and then the [Step-120] is performed, and then the second electrode 32 is formed. [Step-130] may be executed.
  • the thickness t 1 of the first light guide layer is defined, the light confinement factor can be lowered and the light field intensity can be reduced. As a result of the distribution peak moving from the active layer to the first light guide layer, the optical density in the vicinity of the active layer can be reduced during high output operation, not only can optical damage be prevented, but also high output can be achieved. Achievement can be achieved.
  • the thickness t 1 ′ of the first light guide layer constituting the ridge stripe structure is defined, the single mode of the emitted light beam can be achieved. Can do.
  • the slab waveguide width being equal to the thickness of the first light guide layer, a light beam cross-sectional shape close to a perfect circle can be obtained, and the light collection characteristics deteriorate in applications using lenses and optical fibers. This does not cause any negative effects.
  • Example 2 is a modification of the light-emitting element of Example 1, and relates to a second manufacturing method of the light-emitting element of the present disclosure.
  • the light-emitting element of Example 2 is also specifically a semiconductor laser element, and a schematic partial cross-sectional view taken along a virtual plane perpendicular to the axis of the light-emitting element is shown in FIG.
  • two recesses 25 extending along the axial direction of the light emitting element are formed in the base body 20 ′.
  • the laminated structure 20 described in the first embodiment is formed on the entire surface, that is, on the two recesses 25 and the region 26 of the base body 20 ′ sandwiched between the two recesses 25.
  • a second electrode 32 is provided above the region 26 of the base body 20 ′.
  • the first compound semiconductor layer 21 has a laminated structure of a first cladding layer and a first light guide layer from the substrate side,
  • T Total the total thickness of the laminated structure
  • D the depth of the recess 25
  • 6 ⁇ 10 ⁇ 7 m ⁇ t 1 Preferably, 8 ⁇ 10 ⁇ 7 m ⁇ t 1 Satisfied, (T Total -0.5 ⁇ t 1 ) ⁇ D ⁇ T Total
  • the width of the recess 25 is 20 ⁇ m, and the width of the region 26 of the base body 20 ′ sandwiched between the two recesses 25 is 1.5 ⁇ m.
  • the light emitting element of Example 2 and the semiconductor laser device assembly including the light emitting element of Example 2 are the light emitting element of Example 1 and the semiconductor including the light emitting element of Example 1. Since it has the same configuration and structure as the laser device assembly, detailed description is omitted.
  • FIGS. 7A, 7B, and 7C are schematic partial cross-sectional views of a substrate and the like.
  • Step-200 First, two recesses 25 extending along the axial direction of the light emitting element to be manufactured are formed on the base 20 ′ based on a well-known photolithography technique and dry etching technique, and the base 20 ′ sandwiched between the two recesses 25. Region 26 is obtained (see FIG. 7A).
  • Step-210 Next, on the base body 20 ′, specifically, on the (0001) plane of the n-type GaN substrate, more specifically, the two concave portions 25 and the base body 20 ′ sandwiched between the two concave portions 25.
  • a first compound semiconductor layer 21 having the first conductivity type (n-type) and an active layer made of a compound semiconductor are formed on the region 26 based on the well-known MOCVD method in the same manner as [Step-100] in the first embodiment.
  • (Light-emitting region, gain region) 23 and a second compound semiconductor layer 22 having a second conductivity type (p-type) different from the first conductivity type are sequentially stacked to form a stacked structure 20 (FIG. 7 (B)).
  • the laminated insulating film 24 is formed on the entire surface, and an opening is formed in a region where the second electrode is to be provided based on the photolithography technique and the dry etching technique. Then, after the metal material layer constituting the second electrode is formed on the laminated insulating film 24 including the inside of the opening, the second electrode 32 is provided by patterning the metal material layer based on the photolithography technique and the dry etching technique. Can do.
  • Step-230 After that, the first electrode 31 is formed (see FIG. 7C), the substrate is cleaved, and further packaged, whereby the light-emitting element of Example 2 can be manufactured.
  • the thickness of the first light guide layer on the region of the substrate sandwiched between the two recesses (that is, the portion of the substrate positioned between the recesses and the recesses) Since the length t 1 is specified, the light density in the vicinity of the active layer can be reduced during high output operation, not only can optical damage be prevented, but the saturation energy of the amplified light is increased and the output is increased. Can be achieved. Moreover, in the method for manufacturing the light emitting device of Example 2, since the depth D of the recess is defined, it is possible to achieve a single mode of the emitted light beam.
  • Example 2 it is not necessary to dry-etch the laminated structure in order to obtain the ridge stripe structure, and it is possible to prevent the reliability of the laminated structure from being lowered.
  • Example 3 is also a modification of the light-emitting element of Example 1, and relates to a third method for manufacturing the light-emitting element of the present disclosure.
  • the light-emitting element of Example 3 is also specifically a semiconductor laser element, and a schematic partial sectional view taken along a virtual plane perpendicular to the axis of the light-emitting element is shown in FIG. 9B.
  • the first portion 21 1 of the first compound semiconductor layer 21 has a laminated structure of the first cladding layer 121A and the first portion 121B 1 of the first light guide layer 121B from the base side, and the first compound The second portion 21 2 of the semiconductor layer 21 is composed of the second portion 121B 2 of the first light guide layer 121B.
  • a growth inhibition layer 27 made of SiO 2 is formed on the top surface of the first portion 121B 1 of the first light guide layer 121B.
  • the total thickness of the first portion 121B 1 of the first light guide layer 121B and the second portion 121B 2 of the first light guide layer 121B is t 1
  • the second portion 121B 2 of the first light guide layer 121B is When the thickness is t 1 ' 6 ⁇ 10 ⁇ 7 m ⁇ t 1
  • 8 ⁇ 10 ⁇ 7 m ⁇ t 1 Satisfied 0 (m) ⁇ t 1 ′ ⁇ 0.5 ⁇ t 1
  • the light emitting element of Example 3 and the semiconductor laser device assembly including the light emitting element of Example 3 are the light emitting element of Example 1 and the semiconductor including the light emitting element of Example 1. Since it has the same configuration and structure as the laser device assembly, detailed description is omitted.
  • FIGS. 8A and 8B and FIGS. 9A and 9B are schematic partial cross-sectional views of a substrate and the like. explain.
  • the first portion 21 1 of the first compound semiconductor layer 21 having the first conductivity type is formed on the base body 20 ′.
  • the substrate 20 ′ specifically, the (0001) plane of the n-type GaN substrate
  • the first conductivity type (n-type) and a GaN-based compound A first compound semiconductor layer 21 made of semiconductor, specifically, a first cladding layer (n-type AlGaN layer) 121A and a first light guide layer (n-type GaN layer) 121B 1 are formed (FIG. 8 (A)).
  • the growth inhibition layer 27 in which the region of the first portion 21 1 (part of the first light guide layer 121B 1 ) of the first compound semiconductor layer 21 in which the ridge stripe structure 20A is to be formed is exposed to the first compound semiconductor. Formed on the first portion 21 1 of the layer 21. That is, the growth inhibition layer 27 in which the opening 28 is provided in the region where the ridge stripe structure 20 A is to be formed is formed on the first portion 21 1 of the first compound semiconductor layer 21. Specifically, over the entire surface, and more specifically, on a portion 121B 1 of the first optical guide layer (n-type GaN layer) to form a growth inhibitory layer 27 based on the CVD method. Then, an opening 28 is formed in the region of the growth inhibition layer 27 where the ridge stripe structure 20A is to be formed based on the photolithography technique and the dry etching technique (see FIG. 8B).
  • the second portion of the first compound semiconductor layer 21 is formed on the first portion 21 1 of the first compound semiconductor layer 21 exposed at the bottom of the opening 28 (part of the first light guide layer 121B 1 ).
  • 21 2 (second portion 121B 2 of the first light guide layer), an active layer 23 made of a compound semiconductor, and a second compound semiconductor layer 22 having a second conductivity type different from the first conductivity type are sequentially stacked.
  • the laminated structure 20 thus formed is formed (see FIG. 9A). Specifically, the same step as [Step-100] of Example 1 is performed.
  • the second portion 21 2 or the like of the first compound semiconductor layer 21 does not grow or only slightly grows.
  • the second portion 21 2 and the like of the first compound semiconductor layer 21 on the growth inhibition layer 27 may be removed by an etching method, or if left as it is, no problem occurs.
  • the laminated insulating film 24 is formed on the entire surface, and an opening is formed in the region of the laminated insulating film 24 where the second electrode is to be provided based on the photolithography technique and the dry etching technique. Then, after the metal material layer constituting the second electrode is formed on the laminated insulating film 24 including the inside of the opening, the second electrode 32 is provided by patterning the metal material layer based on the photolithography technique and the dry etching technique. Can do.
  • Step-340 After that, the first electrode 31 is formed (see FIG. 9B), the substrate is cleaved, and further packaged, whereby the light-emitting element of Example 3 can be manufactured.
  • the total thickness t 1 of the first portion and the second portion of the first light guide layer is defined, so that the light confinement factor is lowered.
  • the thickness t 1 ′ of the second portion of the first light guide layer is defined, so that the emitted light beam can be converted into a single mode. Can be achieved.
  • Example 3 it is not necessary to dry-etch the laminated structure in order to obtain the ridge stripe structure, and it is possible to prevent the reliability of the laminated structure 20 from being lowered.
  • the fourth embodiment is a modification of the first to third embodiments, but a semiconductor optical amplifier (SOA) 300 that amplifies and emits laser light from the laser light source 200 is configured from the light emitting element of the fourth embodiment.
  • FIG. 10 shows a conceptual diagram of an optical output device of Example 4 including a semiconductor optical amplifier.
  • the semiconductor laser element and the semiconductor optical amplifier 300 constituting the laser light source 200 have substantially the same configuration and structure as the light emitting elements described in the first to third embodiments.
  • the laser light emitted from the laser light source 200 is incident on the reflection mirror 320 via the optical isolator 316 and the reflection mirror 317.
  • the laser light reflected by the reflection mirror 320 passes through the half-wave plate ( ⁇ / 2 wavelength plate) 321 and the lens 322 and enters the semiconductor optical amplifier 300.
  • the optical isolator 316 is arranged to prevent the return light from the semiconductor optical amplifier 300 from going to the laser light source 200. Then, the light is amplified in the semiconductor optical amplifier 300 and is emitted out of the system through the lens 330.
  • the semiconductor optical amplifier 300 is composed of a transmissive semiconductor optical amplifier.
  • a low reflection coating layer (AR) is formed on the light incident end face (first end face) 301 of the semiconductor optical amplifier 300 and the light emitting end face (second end face) 302 facing the light incident end face 301. .
  • the low reflection coating layer (AR) has a structure in which one titanium oxide layer and one aluminum oxide layer are laminated.
  • the laser light incident from the light input end face 301 side is optically amplified inside the semiconductor optical amplifier 300 and output from the opposite light exit end face 302. Laser light is basically guided only in one direction.
  • the laser light source 200 includes the semiconductor laser device assembly of the first embodiment including the semiconductor laser element that is the light emitting element of the first embodiment, and the laser light emitted from the laser light source 200 is The light enters the semiconductor optical amplifier 300.
  • the laser light source 200 that generates laser light to be incident on the semiconductor optical amplifier 300 is composed of a mode-locked semiconductor laser element, and pulsed laser light emitted from the mode-locked semiconductor laser element is incident on the semiconductor optical amplifier 300.
  • the semiconductor optical amplifier is composed of a transmissive semiconductor optical amplifier, but is not limited thereto, and may be composed of, for example, a monolithic semiconductor optical amplifier.
  • Example 4 the length and width of the ridge stripe structure 20A were 3.0 mm and 2.2 ⁇ m, respectively. Then, a mode-locked optical pulse light having a wavelength of 399 nm, a repetition frequency of 1 GHz, an optical pulse width of 2.1 picoseconds, and an incident light average power of 5.3 milliwatts was made incident on the semiconductor optical amplifier 300 of Example 4 as shown in FIG. As shown, when the amplifier driving current (current flowing from the second electrode 32 to the first electrode 31) is 2.8 amperes, an average output of 800 milliwatts or more can be obtained.
  • the width of the ridge stripe structure 20A is as narrow as about 2.2 ⁇ m, an amplification characteristic that greatly exceeds the average optical output of 400 milliwatts of the conventional semiconductor optical amplifier can be obtained, and it can be confirmed that it is a single mode. It was.
  • the fifth embodiment is a modification of the first to fourth embodiments.
  • the first compound semiconductor layer 21 is formed of the first cladding layer 121A and the first light guide layer 121b 1 from the base 20 ′ side. , 121b 2 , and a compound semiconductor material having a refractive index higher than the refractive index of the compound semiconductor material constituting the first compound semiconductor layer 21 in the first light guide layers 121b 1 , 121b 2 Specifically, a high refractive index layer 29 made of In, and specifically, a high refractive index layer 29 made of In 0.02 Ga 0.98 N having a thickness of 50 nm is formed.
  • the distance from the interface between the active layer 23 and the upper first light guide layer 121b 2 to the interface between the upper first light guide layer 121b 2 and the high refractive index layer 29 was set to 0.35 ⁇ m.
  • the refractive index of the compound semiconductor material constituting the first light guide layers 121b 1 and 121b 2 is n G ⁇ 1
  • the refractive index of the compound semiconductor material constituting the high refractive index layer 29 is n HR
  • the active layer 23 is
  • the average refractive index of the constituent compound semiconductor material is n Ac , 0.01 ⁇ n HR ⁇ n G ⁇ 1 ⁇ 0.1 Satisfied, n HR ⁇ n Ac Is pleased.
  • n Ac 2.620 It is.
  • the present disclosure has been described based on the preferred embodiments, the present disclosure is not limited to these embodiments.
  • the configurations of the light emitting element, the semiconductor laser element, the semiconductor laser device assembly, the semiconductor optical amplifier, the optical output device, and the laser light source described in the embodiments are examples, and can be changed as appropriate. In the examples, various values are shown, but these are also examples. For example, if the specification of the light emitting element to be used is changed, it will be naturally changed.
  • the axis of the light emitting element and the axis of the ridge stripe structure may intersect at a predetermined angle, or the planar shape of the ridge stripe structure may be tapered.
  • Example 3 the growth inhibition layer is formed on the top surface of the first portion of the first light guide layer. Instead, the region where the first portion of the first light guide layer is to be formed is sandwiched. In this way, two strip-like growth inhibition layers may be formed.
  • the light emitting element is provided on the C-plane and ⁇ 0001 ⁇ plane which are polar planes of the n-type GaN substrate.
  • the A-plane which is the ⁇ 11-20 ⁇ plane, ⁇ 1-100 ⁇ M-plane, ⁇ 1-102 ⁇ plane, or ⁇ 11-2n ⁇ plane including ⁇ 11-22 ⁇ plane and ⁇ 11-22 ⁇ plane, ⁇ 10-11 ⁇ plane , ⁇ 10-12 ⁇ planes may be provided on a semipolar plane, so that even if piezo polarization and spontaneous polarization occur in the active layer of the light emitting element, the thickness of the active layer Piezopolarization does not occur in the vertical direction and piezopolarization occurs in a direction substantially perpendicular to the thickness direction of the active layer, so that adverse effects due to piezopolarization and spontaneous polarization can be eliminated.
  • the ⁇ 11-2n ⁇ plane means a nonpolar plane that forms approximately 40 degrees with respect to the C plane.
  • this indication can also take the following structures.
  • a light emitting device comprising: The first compound semiconductor layer has a laminated structure of a first cladding layer and a first light guide layer from the substrate side, The laminated structure has a ridge stripe structure composed of a part of the second compound semiconductor layer, the active layer, and the first light guide layer in the thickness direction, When the thickness of the first light guide layer is t 1 and the thickness of the first light guide layer constituting the ridge stripe structure is t 1 ′, 6 ⁇ 10 ⁇ 7 m ⁇ t 1 0 (m) ⁇ t 1 ′ ⁇ 0.5 ⁇ t 1 A light emitting device that satisfies the requirements.
  • the light emitting device according to any one of [1] to [5], comprising a semiconductor optical amplifier.
  • a high refractive index layer made of a compound semiconductor material having a refractive index higher than that of the compound semiconductor material constituting the first light guide layer is formed in the first light guide layer [1] to [7. ]
  • the refractive index of the compound semiconductor material constituting the first light guide layer is n G-1 and the refractive index of the compound semiconductor material constituting the high refractive index layer is n HR , 0.01 ⁇ n HR ⁇ n G ⁇ 1 ⁇ 0.1
  • the second compound semiconductor layer has a laminated structure of a second light guide layer and a second cladding layer from the substrate side,
  • the thickness of the 1st light guide layer is a light emitting element given in any 1 paragraph of [1] thru / or [9] thicker than the thickness of the 2nd light guide layer.
  • the second compound semiconductor layer and the active layer are etched based on the dry etching method, and further, the first compound semiconductor layer is partially etched in the thickness direction based on the dry etching method to form a ridge stripe structure, Immersing the etched portion in an acidic or alkaline solution,
  • the first compound semiconductor layer has a laminated structure of a first cladding layer and a first light guide layer from the substrate side,
  • the ridge stripe structure is composed of a part of the second compound semiconductor layer, the active layer, and the first light guide layer in the thickness direction,
  • the first compound semiconductor layer has a laminated structure of a first cladding layer and a first light guide layer from the substrate side,
  • T Total the total thickness of the laminated structure
  • D the depth of the recesses
  • the growth inhibition layer is composed of at least one material layer selected from the group consisting of SiO 2 , Al 2 O 3 , AlN, ZrO 2 , Ta 2 O 5, and AlGaInN. Manufacturing method.
  • a high refractive index layer made of a compound semiconductor material having a refractive index higher than that of the compound semiconductor material constituting the first light guide layer is formed [12] to [15].

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WO2000021169A1 (en) * 1998-10-07 2000-04-13 Sharp Kabushiki Kaisha Semiconductor laser
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WO2000021169A1 (en) * 1998-10-07 2000-04-13 Sharp Kabushiki Kaisha Semiconductor laser
JP2000312051A (ja) * 1999-04-28 2000-11-07 Hitachi Ltd 半導体レーザ装置

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