WO2013045345A3 - Schichtverbund zum verbinden von elektronischen bauteilen umfassend eine ausgleichsschicht, anbindungsschichten und verbindungsschichten, verfahren zu dessen ausbildung und dessen enthaltende schaltungsanordnung - Google Patents

Schichtverbund zum verbinden von elektronischen bauteilen umfassend eine ausgleichsschicht, anbindungsschichten und verbindungsschichten, verfahren zu dessen ausbildung und dessen enthaltende schaltungsanordnung Download PDF

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Publication number
WO2013045345A3
WO2013045345A3 PCT/EP2012/068570 EP2012068570W WO2013045345A3 WO 2013045345 A3 WO2013045345 A3 WO 2013045345A3 EP 2012068570 W EP2012068570 W EP 2012068570W WO 2013045345 A3 WO2013045345 A3 WO 2013045345A3
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WIPO (PCT)
Prior art keywords
layer
layers
layer composite
electronic components
circuit arrangement
Prior art date
Application number
PCT/EP2012/068570
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English (en)
French (fr)
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WO2013045345A2 (de
Inventor
Daniel Wolde-Giorgis
Original Assignee
Robert Bosch Gmbh
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Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to EP12774969.5A priority Critical patent/EP2761650A2/de
Publication of WO2013045345A2 publication Critical patent/WO2013045345A2/de
Publication of WO2013045345A3 publication Critical patent/WO2013045345A3/de

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0233—Sheets, foils
    • B23K35/0238—Sheets, foils layered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
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Abstract

Gegenstand der vorliegenden Erfindung ist ein Schichtverbund (10), insbesondere zum Verbinden von elektronischen Bauteilen (11, 12), umfassend mindestens eine Ausgleichsschicht (40), mindestens zwei Anbindungsschichten (30) und mindestens zwei Verbindungsschichten (20), wobei die Ausgleichsschicht (40) aus Aluminium oder Molybdän, aus einer Aluminium- oder Molybdänlegierung, aus einem Metall-Matrix-Material aus Aluminium und Siliziumcarbid oder aus Aluminium und Kupfercarbon, oder aus einer Kupfer-Molybdän-Legierung ausgebildet ist, wobei auf mindestens zwei gegenüberliegenden Seiten der Ausgleichsschicht (40) jeweils eine Anbindungsschicht (30) aus einem Edelmetall aufgebracht ist, und wobei auf den Anbindungsschichten (30) jeweils eine Verbindungsschicht (20) aufgebracht ist, wobei die Verbindungsschichten (20) aus sinterbarem und/oder gesintertem Metallpulver ausgebildet sind. Der Schichtverbund (10) kann, insbesondere in einer Vielzahl von einzelnen sinterbaren Formteilen (10a, 10b, 10c, 10d,...), auf einer Trägerfolie (50) aufgebracht sein. Die Erfindung betrifft weiterhin ein Verfahren zur Ausbildung eines erfindungsgemäßen Schichtverbunds (10) sowie eine Schaltungsanordnung (100) enthaltend einen erfindungsgemäßen Schichtverbund (10)
PCT/EP2012/068570 2011-09-30 2012-09-20 Schichtverbund zum verbinden von elektronischen bauteilen umfassend eine ausgleichsschicht, anbindungsschichten und verbindungsschichten WO2013045345A2 (de)

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DE102011083899A DE102011083899A1 (de) 2011-09-30 2011-09-30 Schichtverbund zum Verbinden von elektronischen Bauteilen umfassend eine Ausgleichsschicht, Anbindungsschichten und Verbindungsschichten

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI624356B (zh) 2013-11-11 2018-05-21 Nippon Steel & Sumitomo Metal Corp Metal joint structure using metal nanoparticle, metal joint method, and metal joint material
EP3174656B1 (de) * 2014-07-28 2021-07-07 Heraeus Deutschland GmbH & Co. KG Verfahren zum verbinden von bauelementen durch drucksintern
WO2018047988A1 (ko) * 2016-09-06 2018-03-15 주식회사 더굿시스템 고출력 소자용 방열판재
EP3690936A1 (de) * 2019-01-29 2020-08-05 Heraeus Deutschland GmbH & Co KG Verfahren zum herstellen eines spacer-systems mit chipvertiefung, entsprechendes spacer-system und dessen verwendung zur kontaktierung eines chips mit einem substrat mittels sintern
DE102020216053A1 (de) 2020-12-16 2022-06-23 Robert Bosch Gesellschaft mit beschränkter Haftung Verbindungsanordnung mit einer porösen Sinterschicht
EP4310905A1 (de) * 2022-07-18 2024-01-24 Siemens Aktiengesellschaft Sinterpreform mit einem massiven kern und sinterschichten auf beiden seiten des kerns, verfahren zur herstellung einer drucksinterverbindung von zwei fügepartnern damit und entsprechende anordnung umfassend eine drucksinterverbindung von zwei fügepartnern

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994027319A1 (de) * 1993-05-07 1994-11-24 Siemens Aktiengesellschaft Leistungshalbleiterbauelement mit pufferschicht
EP1684340A2 (de) * 2005-01-20 2006-07-26 Nissan Motor Co., Ltd. Verfahren zum Bonden einer Halbleitervorrichtung auf ein metallisches Substrat
WO2010072534A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Hochtemperaturbeständige lötmittelfreie bauelementstruktur und verfahren zum elektrischen kontaktieren
DE102010001666A1 (de) * 2010-02-08 2011-08-11 Robert Bosch GmbH, 70469 Elektrisches oder elektronisches Verbundbauteil

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3924225C2 (de) * 1988-07-22 1994-01-27 Mitsubishi Electric Corp Verfahren zur Herstellung eines Keramik-Metall-Verbundsubstrats sowie Keramik-Metall-Verbundsubstrat
EP0477600A1 (de) * 1990-09-26 1992-04-01 Siemens Aktiengesellschaft Verfahren zum Befestigen eines mit wenigstens einem Halbleiterbauelement versehenen Halbleiterkörpers auf einem Substrat
JP5123633B2 (ja) 2007-10-10 2013-01-23 ルネサスエレクトロニクス株式会社 半導体装置および接続材料
DE102009000514A1 (de) * 2009-01-30 2010-08-26 Robert Bosch Gmbh Verbundbauteil sowie Verfahren zum Herstellen eines Verbundbauteil

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994027319A1 (de) * 1993-05-07 1994-11-24 Siemens Aktiengesellschaft Leistungshalbleiterbauelement mit pufferschicht
EP1684340A2 (de) * 2005-01-20 2006-07-26 Nissan Motor Co., Ltd. Verfahren zum Bonden einer Halbleitervorrichtung auf ein metallisches Substrat
WO2010072534A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Hochtemperaturbeständige lötmittelfreie bauelementstruktur und verfahren zum elektrischen kontaktieren
DE102010001666A1 (de) * 2010-02-08 2011-08-11 Robert Bosch GmbH, 70469 Elektrisches oder elektronisches Verbundbauteil

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