WO2013036953A2 - Pulvérisation sous fréquences multiples permettant d'augmenter la vitesse de dépôt, et matériaux diélectriques pour cinétique de croissance - Google Patents

Pulvérisation sous fréquences multiples permettant d'augmenter la vitesse de dépôt, et matériaux diélectriques pour cinétique de croissance Download PDF

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Publication number
WO2013036953A2
WO2013036953A2 PCT/US2012/054501 US2012054501W WO2013036953A2 WO 2013036953 A2 WO2013036953 A2 WO 2013036953A2 US 2012054501 W US2012054501 W US 2012054501W WO 2013036953 A2 WO2013036953 A2 WO 2013036953A2
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WO
WIPO (PCT)
Prior art keywords
frequency
substrate
target
plasma
power supply
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PCT/US2012/054501
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English (en)
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WO2013036953A3 (fr
Inventor
Chong JIANG
Byung Sung Leo KWAK
Michael Stowell
Karl Armstrong
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Applied Materials, Inc.
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Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2014529955A priority Critical patent/JP6192060B2/ja
Priority to KR1020147009292A priority patent/KR20140063781A/ko
Priority to CN201280043595.8A priority patent/CN103814431B/zh
Publication of WO2013036953A2 publication Critical patent/WO2013036953A2/fr
Publication of WO2013036953A3 publication Critical patent/WO2013036953A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Definitions

  • Embodiments of the present invention relate generally to equipment for dielectric thin film deposition and more specifically to sputtering equipment for dielectric thin films including multiple frequency power sources for the sputter target.
  • dielectric materials such as L13PO4 to form LiPON (lithium phosphorus oxynitride), primarily because of their very low electrical conductivity, require high frequency power supplies (RF) to enable (PVD) sputtering of dielectric targets for thin film deposition.
  • RF power supplies
  • these dielectric materials typically have low thermal conductivity which limits the sputtering process at high frequency to lower power density regimes, in order to avoid problems such as thermal gradient induced stresses in the sputtering target that may lead to cracking and particle generation.
  • the limitation to low power density regimes results in relatively low deposition rates, which in turn leads to high capital expenditure requirements for manufacturing systems with higher throughput capacity.
  • conventional RF PVD techniques are being used to deposit dielectric materials in high volume manufacturing processes for electrochemical devices such as thin film batteries (TFBs) and electrochromic (EC) devices.
  • the present invention relates, in general, to systems and methods for improving deposition of dielectric thin films which include the use of dual frequency target power sources for improved sputtering rates, improved thin film quality and reduced thermal stress in the target.
  • the dual RF frequencies provide independent control of plasma ion density and ion energies, by using, respectively, higher frequency and lower frequency RF target power sources.
  • the present invention is generally applicable to PVD sputter deposition tools for dielectric materials.
  • Specific examples are lithium containing electrolyte materials, e.g., lithium phosphorus oxynitride (LiPON) formed by sputtering lithium orthophosphate (and some variations thereof), typically in a nitrogen gas ambient.
  • LiPON lithium phosphorus oxynitride
  • Such materials are used in electrochemical devices, such as TFBs (thin film batteries) and EC devices (electrochromic devices).
  • Examples of other dielectric thin films to which the present invention is applicable include thin films of oxides, nitrides, oxynitrides, phosphates, sulfides and selenides.
  • the present invention may provide improved control of crystallinity, morphology, grain structure etc. of the deposited dielectric thin films.
  • a method of sputter depositing dielectric thin films may comprise: providing a substrate on a substrate pedestal in a process chamber, the substrate being positioned facing a sputter target; simultaneously applying a first RF frequency from a first power supply and a second RF frequency from a second power supply to the sputter target; and forming a plasma in the process chamber between the substrate and the sputter target, for sputtering the target; wherein the first RF frequency is less than the second RF frequency, the first RF frequency is chosen to control the ion energy of the plasma and the second RF frequency is chosen to control the ion density of the plasma.
  • the self-bias of surfaces within said process chamber may be selected; this is enabled by connecting a blocking capacitor between the substrate pedestal and ground.
  • power sources including DC sources, pulsed DC sources, AC sources, and/or RF sources, may be applied in combination with, or replacing one of, the dual RF power sources, to the target, plasma, and/or substrate.
  • FIG. 1 is a schematic representation of a process chamber with a dual frequency sputter target power supply, according to some embodiments of the present invention
  • FIG. 2 is a schematic representation of a process chamber with multiple power sources, according to some embodiments of the present invention.
  • FIG. 3 is a representation of a process chamber with multiple power sources and a rotating cylindrical target, according to some embodiments of the present invention
  • FIG. 4 is a cut-away representation of part of a dual frequency sputter target power source, according to some embodiments of the present invention.
  • FIG. 5 is a cut-away representation of part of a prior art sputter target power source
  • FIGS. 6 is a graph of ion energy and ion density against sputter target power source frequency, due to Werbaneth et al.;
  • FIG. 7 is a graph of sputter yield against ion energy for a sputter deposition system according to some embodiments of the present invention.
  • FIG. 8 is a graph of sputter yield against ion angle of incidence for a sputter deposition system according to some embodiments of the present invention.
  • FIG. 9 is a cartoon illustrating various possibilities for adatom placement
  • FIG. 10 is a schematic illustration of a thin film deposition cluster tool, according to some embodiments of the present invention.
  • FIG. 1 1 is a representation of a thin film deposition system with multiple in-line tools, according to some embodiments of the present invention.
  • FIG. 12 is a representation of an in-line sputter deposition tool, according to some embodiments of the present invention.
  • FIG. 1 schematically depicts a sputter deposition tool 100 with a vacuum chamber 102 and with dual frequency RF target power sources - one source 1 10 at a lower RF frequency and the other source 1 12 at a higher RF frequency.
  • the RF sources are electrically connected to a target back plate 132 through a matching network 1 14.
  • the substrate 120 sits on a pedestal 122 that is capable of modulating the substrate temperature and of applying bias power from a power supply 124 to the substrate.
  • the target 130 is attached to the back plate 132 and is shown as a magnetron sputter target with a moving magnet 134; however, the approach of the present invention is agnostic to the specific configuration of the sputter target.
  • FIG. 1 schematically depicts a sputter deposition tool 100 with a vacuum chamber 102 and with dual frequency RF target power sources - one source 1 10 at a lower RF frequency and the other source 1 12 at a higher RF frequency.
  • the RF sources are electrical
  • power supply 124 may be replaced by a blocking capacitor - the blocking capacitor is connected between the substrate pedestal and ground.
  • FIGS. 2 & 3 show plasma systems for which combinations of a variety of different power sources may be employed, such as the combination of low and high frequency RF sources described above with reference to FIG. 1.
  • FIG. 2 shows a schematic representation of an example of a deposition tool 200 configured for deposition methods according to the present invention.
  • the deposition tool 200 includes a vacuum chamber 201 , a sputter target 202 and a substrate pedestal 203 for holding a substrate 204.
  • the target 202 may be L13PO4 and a suitable substrate 204 may be silicon, silicon nitride on Si, glass, PET (polyethylene terephthalate), mica, metal foils, etc., with current collector and cathode layers already deposited and patterned.)
  • the chamber 201 has a vacuum pump system 205 for controlling the pressure in the chamber and a process gas delivery system 206.
  • Multiple power sources may be connected to the target.
  • Each target power source has a matching network for handling radio frequency (RF) power supplies.
  • RF radio frequency
  • a filter is used to enable use of two power sources connected to the same target/substrate to operate at different frequencies, where the filter acts to protect the target/substrate power supply operating at the lower frequency from damage due to the higher frequency power.
  • a blocking capacitor may be connected to the substrate pedestal 203 in order to induce a different pedestal/chamber impedance to modulate the self-bias of surfaces within the process chamber, including the target and substrate, and thereby induce different: (1 ) sputtering yields on the target and (2) kinetic energy of adatoms, for modulation of growth kinetics.
  • the capacitance of the blocking capacitor may be adjusted in order to change the self-bias at the different surfaces within the process chamber, importantly the substrate surface and the target surface.
  • FIG. 2 shows a chamber configuration with horizontal planar target and substrate
  • the target and substrate may be held in vertical planes - this configuration can assist in mitigating particle problems if the target itself generates particles.
  • the position of the target and substrate may be switched, so that the substrate is held above the target.
  • the substrate may be flexible and moved in front of the target by a reel to reel system
  • the target may be a rotating or oscillating cylindrical target
  • the target may be non-planar
  • the substrate may be non-planar.
  • the term oscillating is used to refer to limited rotational motion in any one direction such that a solid electrical connection to the target suitable for transmitting RF power can be accommodated.
  • the match boxes and filters may be combined into a single unit for each power source. One or more of these variations may be utilized in deposition tools according to some embodiments of the present invention.
  • FIG. 3 shows an example of a deposition tool 300 with a single rotatable or oscillating cylindrical target 302. Dual rotatable cylindrical targets may also be used.
  • FIG. 3 shows the substrate held above the target.
  • FIG. 3 shows an additional power source 307, which may be connected to either substrate or target, connected between target and substrate, or coupled directly to the plasma in the chamber using an electrode 308.
  • An example of the latter is the power source 307 being a microwave power source coupled directly to the plasma using an antennae (electrode 308); although, microwave energy may be provided to the plasma in many other ways, such as at a remote plasma source.
  • a microwave source for coupling directly with the plasma may include an electron cyclotron resonance (ECR) source.
  • ECR electron cyclotron resonance
  • the substrate and target power sources may be chosen from DC sources, pulsed DC (pDC) sources, AC sources (with frequencies below RF, typically below 1 MHz), RF sources, etc, in any combinations thereof.
  • the additional power source may be chosen from pDC, AC, RF, microwave, a remote plasma source, etc.
  • RF power may be supplied in continuous wave (CW) or burst mode.
  • the target may be configured as an HPPM (high-power pulsed magnetron).
  • HPPM high-power pulsed magnetron
  • combinations may include dual RF sources at the target, pDC and RF at the target, etc. (Dual RF at the target may be well suited for insulating dielectric target materials, whereas pDC and RF or DC and RF at the target may be used for conductive target materials.
  • the substrate bias power source type may be chosen based on what the substrate pedestal can tolerate as well as the desired effect.
  • Some examples of combinations of power sources are provided for deposition of a LiPON electrolyte layer of TFB using a L13PO4 target (an insulating target material) in a nitrogen or argon ambient (the latter requiring a subsequent nitrogen plasma treatment, to provide the necessary nitrogen).
  • Dual RF sources (different frequencies) at the target and an RF bias at the substrate, where the frequency of the RF bias is different to the frequencies used at the target.
  • Dual RF at the target plus microwave plasma enhancement Dual RF at the target plus microwave plasma plus RF substrate bias, where the frequency of the RF bias can be different to the frequencies used at the target.
  • a DC bias or a pDC bias is an option for the substrate.
  • tungsten oxide cathode layer deposition of an EC device ordinarily pDC sputtering of tungsten (a conductive target material) can be used; however, the deposition process may be enhanced by using pDC and RF at the target.
  • FIG. 4 shows a cut-away view of hardware configuration 400 for some embodiments of the dual frequency RF sputter target power sources of the present invention.
  • FIG. 5 shows a cut-away view of a conventional RF sputter chamber power source hardware configuration 500.
  • the power source is connected through the deposition chamber lid 406, which also supports the sputter target 407 (see FIG. 5).
  • a conventional RF power feed 403 is used, along with RF feed extension rods 410 and 41 1.
  • a dual frequency match box 401 is attached to the end of the vertical extension rod 410 by a match box connector 402.
  • a low-pass filter is provided on the low frequency RF power supply side (along the horizontal extension bar 41 1, for example), which is necessary to block power from the high frequency RF source from being transmitted along the waveguide and damaging the low frequency RF power supply.
  • the low frequency RF power supply will also have a match box; although the function of match box and filter may be combined in a single unit.
  • the rods 403, 410 and 41 1 may be silver-plated copper RF rods and are insulated from the housing using Teflon insulators 404, for example.
  • the lower frequency RF source may operate at 500 KHz to 2 MHz, while the higher frequency RF source may operate at 13.56 MHz and up; or (2) the lower frequency may operate at more than 2 MHz, perhaps 13.65 MHz, while the higher frequency may operate at 60 MHz, or higher.
  • the upper limit for the higher frequency may be limited by stray plasma generation, which occurs in corners and narrow gaps within the chamber at higher frequencies - the actual limit will depend on the chamber design.
  • some embodiments of the present invention use a source that can provide more independent control of the ion density and ion energy (self bias) of the plasma than can be achieved with a conventional single frequency RF power source.
  • Both high ion density and high ion energy are desired for high deposition rates with reduced target heating, as explained below; however, as the RF frequency increases ion density increases and ion energy decreases.
  • FIG. 6 shows the frequency dependence of ion density and ion energy (self bias) for an RF plasma due to a conventional single frequency RF power source - curves 601 and 602, respectively.
  • a solution provided by the present invention is to have dual frequency RF sources for the sputter target, where the lower frequency dominates the ion energy and the higher frequency is used to determine the ion density.
  • the ratio of higher frequency to lower frequency in the dual RF sources is used to optimize the ion energy and plasma density to provide a sputter rate enhancement over that available with a single RF source.
  • FIGS. 7 & 8 include data for the following target materials and plasma species: Li 3 P0 4 and N + , LiCo0 2 and Ar + , and LiCo0 2 and 0 2 + systems.
  • the higher ion density of higher frequency plasma may be beneficial from a broader perspective, particularly in enhancing the growth kinetics, as discussed in more detail below with reference to FIG.
  • the dual frequency source would independently modulate the ion energy and ion density by using, respectively, low frequency (LF) and high frequency (HF) RF power sources. In doing so, the dual frequency source, when compared with a single frequency RF source, is projected to achieve a higher sputter yield at a given total source power and to provide enhanced adatom surface mobility and improved growth kinetics.
  • LF low frequency
  • HF high frequency
  • Some embodiments of the present invention provide tools and methodologies that enhance the growth kinetics of dielectric thin film deposition so that the formation of a desired microstructure and phase (grain size, crystallinity, etc.) occurs more readily, especially at the higher deposition rates that are enabled by the sputter deposition sources with dual frequency RF target power supplies.
  • Control of the growth kinetics may allow for control of a broad range of deposited thin film characteristics, including crystallinity, grain structure, etc. For example, control over growth kinetics may be used to reduce pinhole density in the deposited thin films.
  • Sputtered dielectric species typically have low surface mobility, leading to a high propensity for pinhole formation in thin films of these dielectrics. Pinholes in
  • electrochemical devices may lead to device impairment or even failure. Such an
  • the surface mobility of the adatoms can be expressed in terms of the Ehrlich- Schwoebel barrier energy.
  • the Ehrlich-Schwoebel barrier is an activation energy necessary to induce the "arrowed" movement from a higher surface plane to a lower surface plane, as in shifting from situation B to C.
  • the effect of such movement is planarization, reduced pin-hole density and better conformality. It is estimated that this barrier energy is in the range of 5 to 25 eV for a LiPON thin film.
  • various possible scenarios for an incoming adatom 901 include: (A) desired deposition, where the final position 902 of the adatom is filling a gap; (B) undesired deposition as pinholes can be created, since the final adatom position 902 is in a second layer before all the gaps in a first layer are filled; (C) desired deposition where the impinging adatom 901 has sufficient energy to overcome (or be induced to overcome) the Erlich- Schwoebel barrier, so that even though the adatom is first positioned in a second layer at position 903, there is sufficient energy for the adatom to move through positions 904 and 905, before coming to rest in final position 902 in a gap in the first layer; and (D) resputtering of adatoms caused by an incoming adatom 901 with high energy, sputtering away the atom in position 906.
  • the goal is to add sufficient energy to the growing film so as not to affect the situation (A), which is the desired outcome, induce (C) for the situation (B), but not add too much energy to induce situation (D), which is the re-sputtering process.
  • additional energy needs to be added to the growing film to achieve the desired outcome will depend on the deposition rate and incoming adatom energy. Additional energy may be added by directly heating the substrate and/or creating a substrate plasma.
  • the tertiary power source coupled to the substrate/pedestal may be used to achieve the following: ( 1 ) formation of a plasma which enhances the ion density effect of the dual sputtering source plasma on the substrate, and (2) formation of a self bias on the substrate to accelerate the incoming, charged adatoms/plasma species.
  • FIG 10 is a schematic illustration of a processing system 600 for fabricating an electrochemical device such as a TFB or EC device, according to some embodiments of the present invention.
  • the processing system 600 includes a standard mechanical interface (SMIF) to a cluster tool equipped with a reactive plasma clean (RPC) and/or sputter pre-clean (PC) chamber and process chambers C1-C4, which may include a dielectric thin film sputter deposition chamber as described above.
  • RPC reactive plasma clean
  • PC sputter pre-clean
  • a glovebox may also be attached to the cluster tool.
  • the glovebox can store substrates in an inert environment (for example, under a noble gas such as He, Ne or Ar), which is useful after alkali metal/alkaline earth metal deposition.
  • An ante chamber to the glovebox may also be used if needed - the ante chamber is a gas exchange chamber (inert gas to air and vice versa) which allows substrates to be transferred in and out of the glovebox without contaminating the inert environment in the glovebox.
  • a glovebox can be replaced with a dry room ambient of sufficiently low dew point as such is used by lithium foil manufacturers.
  • the chambers C1-C4 can be configured for process steps for manufacturing thin film battery devices for example which may include: deposition of an electrolyte layer (e.g. LiPON by RF sputtering a L13PO4 target in N 2 ) in a dual RF source deposition chamber, as described above.
  • an electrolyte layer e.g. LiPON by RF sputtering a L13PO4 target in N 2
  • a dual RF source deposition chamber as described above.
  • Figure 1 1 shows a representation of an in-line fabrication system 1 100 with multiple in-line tools 1 110, 1 120, 1130, 1140, etc., according to some embodiments of the present invention.
  • In-line tools may include tools for depositing all the layers of an electrochemical device - including both TFBs and electrochromic devices.
  • the in-line tools may include pre- and post-conditioning chambers.
  • tool 1 1 10 may be a pump down chamber for establishing a vacuum prior to the substrate moving through a vacuum airlock 1 1 15 into a deposition tool 1120.
  • Some or all of the in-line tools may be vacuum tools separated by vacuum airlocks 11 15.
  • the order of process tools and specific process tools in the process line will be determined by the particular electrochemical device fabrication method being used.
  • one or more of the in-line tools may be dedicated to sputter deposition of a thin film dielectric according to some embodiments of the present invention in which a dual RF frequency target source is used, as described above.
  • substrates may be moved through the in-line fabrication system oriented either horizontally or vertically.
  • a substrate conveyer 1 150 is shown with only one in-line tool 1 1 10 in place.
  • a substrate holder 1 155 containing a substrate 1210 (the substrate holder is shown partially cut-away so that the substrate can be seen) is mounted on the conveyer 1 150, or equivalent device, for moving the holder and substrate through the inline tool 1 110, as indicated.
  • a suitable in-line platform for processing tool 1 1 10 with vertical substrate configuration is Applied Material's New AristoTM.
  • a suitable in-line platform for processing tool 1 110 with horizontal substrate configuration is Applied Material's AtonTM.
  • the present invention is applicable generally to sputter deposition tools and methodologies for deposition of dielectric thin films. Although specific examples of processes are provided for PVD RF sputtering of a L13PO4 target in a nitrogen ambient to form LiPON thin films, the processes of the present invention are applicable to the deposition of other dielectric thin films, such as thin films of Si0 2 , A1 2 0 3 , Zr0 2 , Si 3 N 4 , SiON, Ti0 2 , etc. and more generally to thin films of oxides, nitrides, oxynitrides, phosphates, sulfides, selenides, etc.

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Abstract

La présente invention concerne un procédé de dépôt par pulvérisation de minces films diélectriques, pouvant comprendre les étapes suivantes : une étape consistant à mettre à disposition un substrat sur un socle de substrat dans une chambre de traitement, le substrat étant positionné en face d'une cible de pulvérisation; une étape consistant à appliquer simultanément une première fréquence RF provenant d'une première source d'alimentation électrique et une seconde fréquence RF provenant d'une seconde source d'alimentation électrique sur la cible de pulvérisation; et une étape consistant à former un plasma dans la chambre de traitement entre le substrat et la cible de pulvérisation, en vue de bombarder la cible. La première fréquence RF est inférieure à la seconde fréquence RF, la première fréquence RF étant choisie pour commander l'énergie ionique du plasma, et la seconde fréquence RF étant choisie pour commander la densité ionique du plasma. La connexion d'un condensateur de blocage entre le socle du substrat et la masse permet de choisir la polarisation automatique des surfaces dans ladite chambre de traitement.
PCT/US2012/054501 2011-09-09 2012-09-10 Pulvérisation sous fréquences multiples permettant d'augmenter la vitesse de dépôt, et matériaux diélectriques pour cinétique de croissance WO2013036953A2 (fr)

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JP2014529955A JP6192060B2 (ja) 2011-09-09 2012-09-10 誘電体材料の堆積速度および成長動態を高める多重周波数スパッタリング
KR1020147009292A KR20140063781A (ko) 2011-09-09 2012-09-10 유전체 재료들의 증착 레이트 및 성장 운동의 향상을 위한 다중 주파수 스퍼터링
CN201280043595.8A CN103814431B (zh) 2011-09-09 2012-09-10 用于介电材料的沉积速率提高和生长动力学增强的多频溅射

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US201161533074P 2011-09-09 2011-09-09
US61/533,074 2011-09-09

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CN103814431B (zh) 2017-03-01
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KR20140063781A (ko) 2014-05-27
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JP2017201061A (ja) 2017-11-09
JP6192060B2 (ja) 2017-09-06
US20130248352A1 (en) 2013-09-26

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