WO2013035136A1 - 発光装置およびその製造方法 - Google Patents
発光装置およびその製造方法 Download PDFInfo
- Publication number
- WO2013035136A1 WO2013035136A1 PCT/JP2011/005056 JP2011005056W WO2013035136A1 WO 2013035136 A1 WO2013035136 A1 WO 2013035136A1 JP 2011005056 W JP2011005056 W JP 2011005056W WO 2013035136 A1 WO2013035136 A1 WO 2013035136A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- wiring
- light emitting
- emitting device
- metal oxide
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010410 layer Substances 0.000 claims abstract description 260
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 35
- 239000011737 fluorine Substances 0.000 claims abstract description 35
- 239000012044 organic layer Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 20
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 20
- 230000000903 blocking effect Effects 0.000 claims description 85
- 239000000463 material Substances 0.000 claims description 57
- 238000005192 partition Methods 0.000 claims description 57
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 16
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 10
- 229910001515 alkali metal fluoride Inorganic materials 0.000 claims description 9
- 239000011368 organic material Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000011775 sodium fluoride Substances 0.000 claims description 5
- 235000013024 sodium fluoride Nutrition 0.000 claims description 5
- 229910052723 transition metal Inorganic materials 0.000 claims description 5
- 150000003624 transition metals Chemical class 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000002585 base Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 32
- 230000004888 barrier function Effects 0.000 abstract description 12
- 229910044991 metal oxide Inorganic materials 0.000 abstract 4
- 150000004706 metal oxides Chemical class 0.000 abstract 4
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 38
- 238000002347 injection Methods 0.000 description 37
- 239000007924 injection Substances 0.000 description 37
- -1 polyethylene Polymers 0.000 description 27
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229920000178 Acrylic resin Polymers 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 description 3
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- MVWPVABZQQJTPL-UHFFFAOYSA-N 2,3-diphenylcyclohexa-2,5-diene-1,4-dione Chemical class O=C1C=CC(=O)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 MVWPVABZQQJTPL-UHFFFAOYSA-N 0.000 description 1
- TWZYORZPYCRVAX-UHFFFAOYSA-N 2-(2h-thiopyran-1-ylidene)propanedinitrile Chemical class N#CC(C#N)=S1CC=CC=C1 TWZYORZPYCRVAX-UHFFFAOYSA-N 0.000 description 1
- KYGSXEYUWRFVNY-UHFFFAOYSA-N 2-pyran-2-ylidenepropanedinitrile Chemical class N#CC(C#N)=C1OC=CC=C1 KYGSXEYUWRFVNY-UHFFFAOYSA-N 0.000 description 1
- 150000004325 8-hydroxyquinolines Chemical class 0.000 description 1
- ZYASLTYCYTYKFC-UHFFFAOYSA-N 9-methylidenefluorene Chemical class C1=CC=C2C(=C)C3=CC=CC=C3C2=C1 ZYASLTYCYTYKFC-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical class C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WDECIBYCCFPHNR-UHFFFAOYSA-N Chrysene Natural products C1=CC=CC2=CC=C3C4=CC=CC=C4C=CC3=C21 WDECIBYCCFPHNR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 108091034117 Oligonucleotide Proteins 0.000 description 1
- YNPNZTXNASCQKK-UHFFFAOYSA-N Phenanthrene Natural products C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical class C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 241000927721 Tritia Species 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000000641 acridinyl group Chemical class C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 1
- 150000008425 anthrones Chemical class 0.000 description 1
- BBEAQIROQSPTKN-UHFFFAOYSA-N antipyrene Natural products C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N benzo-alpha-pyrone Natural products C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005385 borate glass Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- GNBHRKFJIUUOQI-UHFFFAOYSA-N fluorescein Chemical class O1C(=O)C2=CC=CC=C2C21C1=CC=C(O)C=C1OC1=CC(O)=CC=C21 GNBHRKFJIUUOQI-UHFFFAOYSA-N 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- VPUGDVKSAQVFFS-UHFFFAOYSA-N hexabenzobenzene Natural products C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- AWOORJZBKBDNCP-UHFFFAOYSA-N molybdenum;oxotungsten Chemical compound [Mo].[W]=O AWOORJZBKBDNCP-UHFFFAOYSA-N 0.000 description 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical class C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 239000005365 phosphate glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- WVIICGIFSIBFOG-UHFFFAOYSA-N pyrylium Chemical class C1=CC=[O+]C=C1 WVIICGIFSIBFOG-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical class [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 1
- 150000005075 thioxanthenes Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80517—Multilayers, e.g. transparent multilayers
Definitions
- the present invention relates to a light emitting device in which a light emitting layer is interposed between a pixel electrode formed for each pixel and a common electrode formed for each pixel.
- a top emission type EL display device generally uses ITO (indium tin oxide) or IZO (indium zinc oxide), which are transparent conductive materials, as a common electrode. Since these are oxides, they have higher resistance than metals such as Al (aluminum) used for pixel electrodes. For this reason, the luminance of each light emitting layer varies due to the voltage drop of the common electrode.
- ITO indium tin oxide
- IZO indium zinc oxide
- FIG. 11 shows a cross-sectional view of a top emission type EL display device described in Patent Document 1 as an example of an EL display device including a power supply wiring.
- the EL display device 1000 includes a substrate 1001, a first electrode 1002 functioning as a pixel electrode, a power supply wiring 1003, a hole injection layer 1004, a partition wall 1005, a light emitting layer 1006, and an electron transport layer 1007. And a second electrode 1008 functioning as an electrode.
- the first electrode 1002 and the power supply wiring 1003 are arranged on the substrate 1001 with a space therebetween.
- a partition wall 1005 is formed between the first electrode 1002 and the power supply wiring 1003.
- the partition wall 1005 is formed by forming a partition wall material layer over the entire surface of the first electrode 1002 and the power supply wiring 1003, and then exposing the mask with a mask having an opening having a predetermined shape, and then exposing the mask.
- the partition wall material layer is formed by washing out with a developer.
- a hole injection layer 1004, a light emitting layer 1006, an electron transport layer 1007, and a second electrode 1008 are formed in this order.
- the EL display device 1000 is a top emission type, for example, ITO is used as the material of the second electrode 1008 as described above. Since ITO has a lower electron injection property to the light emitting layer 1006 than an alkali metal or the like, an electron transport layer 1007 is generally interposed between the second electrode 1008 and the light emitting layer 1006.
- the electron transport layer 1007 for example, an organic material doped with an alkali metal is used.
- a second electrode 1008 is formed on the power supply wiring 1003 with an electron transport layer 1007 interposed therebetween. As a result, the power supply wiring 1003 and the second electrode 1008 are electrically connected.
- the power supply wiring 1003 is provided to suppress the voltage drop of the second electrode 1008, it is desirable that the contact resistance between the power supply wiring 1003 and the second electrode 1008 is low.
- the present inventors have found that the contact resistance between the power supply wiring 1003 and the second electrode 1008 may increase due to fluorine contained in the residue of the partition wall material layer. As the contact resistance increases, the power supplied to the second electrode decreases, which causes a problem that the voltage drop cannot be sufficiently suppressed.
- a light-emitting device includes a substrate, a wiring formed over the substrate for supplying power to the light-emitting layer, and straddling the wiring. Formed on the transition metal oxide layer, a partition wall having an opening on the wiring, and the transition metal oxide layer exposed from the opening.
- a blocking layer is formed on the transition metal oxide layer exposed from the opening, and an organic layer is formed on the blocking layer. Therefore, even if a residue of the barrier rib material at the time of forming the barrier rib remains on the transition metal oxide layer, the organic layer and the transition metal oxide layer are separated by the barrier layer, and the residue is blocked. Will be covered with layers. Thereby, since the movement of fluorine contained in the residue to the organic layer is blocked, it can be avoided that the alkali metal doped in the organic layer becomes a fluoride.
- the increase in contact resistance is considered to be caused by the fact that the alkali metal doped in the organic layer becomes a fluoride and no longer functions as an alkali metal.
- the alkali metal can be prevented from becoming a fluoride as described above, so that an increase in contact resistance between the wiring and the electrode can be suppressed.
- FIG. 1 is a block diagram schematically showing the overall configuration of a light emitting device 1.
- FIG. 3 is a partial cross-sectional view schematically showing a configuration of an EL display panel 10.
- FIG. 3 is a partial cross-sectional view schematically showing a configuration of an experimental device 30.
- FIG. It is a figure which shows the contact resistance in each Sample.
- 4 is a partial cross-sectional view schematically showing a configuration of an experimental device 50.
- FIG. (A) It is a figure which shows the analysis result by SIMS.
- (B) It is a figure which shows the analysis result by SIMS.
- 5 is a diagram illustrating an example of a manufacturing process of the EL display panel 10.
- FIG. FIG. 8 is a diagram illustrating an example of a part subsequent to the process illustrated in FIG.
- FIG. 7 is a fragmentary sectional view showing typically composition of EL display panel 10a. It is a fragmentary sectional view showing typically composition of EL display panel 10b. 4 is a partial cross-sectional view schematically showing a main part of the display device 1000.
- a light-emitting device which is one embodiment of the present invention includes a substrate, a wiring formed over the substrate for supplying power to the light-emitting layer, and a transition metal oxide formed over the substrate across the wiring
- An organic layer formed on the blocking layer and doped with an alkali metal; and formed on the organic layer, and the wiring is formed through the organic layer, the blocking layer, and the transition metal oxide layer.
- an electrode for providing power supplied from the wiring to the light emitting layer is one embodiment of the present invention.
- a blocking layer is formed on the transition metal oxide layer exposed from the opening, and an organic layer is formed on the blocking layer. Therefore, even if a residue of the barrier rib material at the time of forming the barrier rib remains on the transition metal oxide layer, the organic layer and the transition metal oxide layer are separated by the barrier layer, and the residue is blocked. Will be covered with layers. Thereby, since the movement of fluorine contained in the residue to the organic layer is blocked, it can be avoided that the alkali metal doped in the organic layer becomes a fluoride.
- the increase in contact resistance is considered to be caused by the fact that the alkali metal doped in the organic layer becomes a fluoride and no longer functions as an alkali metal.
- the alkali metal can be prevented from becoming a fluoride as described above, so that an increase in contact resistance between the wiring and the electrode can be suppressed.
- the base material of the organic layer may be made of an organic material having an electron transporting property.
- a pixel electrode may be formed on the substrate in the same layer as the wiring and in a region separated from the wiring, and the transition metal oxide layer may be further formed on the pixel electrode. Good.
- the transition metal oxide layer formed on the wiring and the transition metal oxide layer formed on the pixel electrode may be continuous.
- the blocking layer may be further formed on the inner wall of the opening of the partition wall.
- the blocking layer may include the same material as the transition metal oxide layer.
- the thickness of the blocking layer may be 3 nm or more and 10 nm or less.
- the blocking layer may be made of an alkali metal fluoride material.
- the alkali metal fluoride material may be sodium fluoride.
- the blocking layer may have a thickness of 2 nm or more and 5 nm or less.
- the blocking layer may be formed to include any of Al, Ag, Mg, and Ta.
- the transition metal may be Mo, W, Ti, In, Sn, Zn, or Ni.
- a first step of forming an insulating layer over a TFT substrate and a wiring for supplying power to the light-emitting layer are formed over the insulating layer.
- a sixth step of forming an organic layer and a seventh step of forming an electrode for supplying the power supplied from the wiring to the light emitting layer on the organic layer are provided.
- a pixel electrode is formed in the same layer as the wiring on the insulating layer and separated from the wiring, and in the fifth step, the blocking layer is extended on the pixel electrode. May be formed.
- the transition metal oxide layer may be formed over the wiring and the pixel electrode.
- the blocking layer may be further formed on the inner wall of the opening of the partition wall.
- FIG. 1 is a block diagram schematically showing the overall configuration of the light emitting device 1.
- the light emitting device 1 includes an EL display panel 10 and a drive control unit 20 connected thereto.
- the EL display panel 10 is, for example, a top emission type organic EL display panel using an electroluminescence phenomenon of an organic material.
- the drive control unit 20 includes four drive circuits 21 to 24 and a control circuit 25.
- FIG. 2 is a partial cross-sectional view schematically showing the configuration of the EL display panel 10.
- the EL display panel 10 includes a TFT substrate 101, an interlayer insulating film 102, a pixel electrode 103, a power supply wiring 104, a hole injection layer 105, a partition wall 106, a light emitting layer 107, a blocking layer 108, an electron A transport layer 109 and a common electrode 110 are provided.
- the laminated structure of the EL display panel 10 will be described in detail.
- an interlayer insulating film 102 is formed on the TFT substrate 101 (in this specification, a substrate in which the interlayer insulating film 102 is formed on the TFT substrate 101 is defined as “substrate 110”).
- a pixel electrode 103 and a power supply wiring 104 are formed on the interlayer insulating film 102 and at positions separated from each other along the surface of the interlayer insulating film 102.
- a hole injection layer 105 is formed in the interlayer insulating film 102 across the pixel electrode 103 and the power supply wiring 104.
- a partition wall 106 having a first opening corresponding to the pixel electrode 103 and a second opening corresponding to the power supply wiring 104 is formed.
- the light emitting layer 107 is formed.
- the electron carrying layer 109 and the common electrode 110 are laminated
- the electron transport layer 109 and the common electrode 110 are stacked via the blocking layer. ing. Therefore, as shown in the enlarged view of FIG. 2, even if the residue 1061 of the partition wall 106 material remains on the power supply wiring 104, the residue 1061 is covered with the blocking layer 108. Further, the power supply wiring 104 is electrically connected to the common electrode 110 through the blocking layer 108 and the electron transport layer 109.
- the electron transport layer 109 and the common electrode 110 are formed over the light emitting layer 107 and the blocking layer 108 over the partition wall 106. -Materials of each layer of EL display panel 10- Subsequently, materials of each layer in the EL display panel 10 will be described in detail.
- the TFT substrate 101 has a configuration in which a TFT, a power supply wiring member, a passivation film that covers the TFT, and the like are formed on the substrate body.
- the TFT may be one using silicon as a channel material, one using an oxide semiconductor such as indium gallium zinc oxide, or one using an organic semiconductor such as pentacene.
- the substrate body is, for example, alkali-free glass, soda glass, non-fluorescent glass, phosphate glass, borate glass, quartz, acrylic resin, styrene resin, polycarbonate resin, epoxy resin, polyethylene, polyester, silicone resin Or made of an insulating material such as alumina.
- the substrate body may be an organic resin film.
- the interlayer insulating film 102 is made of an insulating material such as polyimide resin or acrylic resin.
- the pixel electrode 103 is not particularly limited, but is preferably formed of a light reflective material.
- Metals, conductive oxides, and conductive polymers are suitable materials. Examples of the metal include aluminum, silver alloy, molybdenum, tungsten, titanium, chromium, nickel, zinc, and alloys thereof.
- Examples of the conductive oxide include indium tin oxide, indium zinc oxide, and zinc oxide.
- Examples of the conductive polymer include polyaniline, polythiophene, and those obtained by mixing them with an acidic or basic substance.
- the hole injection layer 105 has a function of injecting holes into the light emitting layer 107.
- it is formed from an oxide of a transition metal such as tungsten oxide (WOx), molybdenum oxide (MoOx), or molybdenum oxide tungsten (MoxWyOz).
- tungsten oxide WOx
- MoOx molybdenum oxide
- MoxWyOz molybdenum oxide tungsten
- titanium (Ti), indium (In), tin (Sn), zinc (Zn), or nickel (Ni) can also be used.
- the partition wall 106 is made of an organic material such as resin and has an insulating property. Examples of organic materials include acrylic resins, polyimide resins, novolac type phenol resins, and the like.
- the partition wall 106 contains fluorine in order to improve liquid repellency.
- the partition wall 106 preferably has organic solvent resistance. Further, since the partition wall 106 is subjected to an etching process, a baking process, or the like, it is preferable that the partition wall 106 be formed of a highly resistant material that does not excessively deform or alter the process.
- the light emitting layer 107 is an organic light emitting layer, for example, polymer materials such as polyfluorene, polyphenylene vinylene, polyacetylene, polyphenylene, polyparaphenylene ethylene, poly-3-hexylthiophene and derivatives thereof,
- the blocking layer 108 has a function of blocking the movement of fluorine.
- the blocking layer 108 includes, for example, any of the materials listed in the item of the above-mentioned “hole injection layer 105-”.
- you may be comprised including the metal which is easy to react with a fluorine.
- the metal that easily reacts with fluorine include aluminum (Al), silver (Ag), magnesium (Mg), and tantalum (Ta).
- it may be made of a fluorine compound.
- the element constituting the fluorine compound include calcium, lithium, and sodium (hereinafter, collectively referred to as “alkali metal fluoride material”).
- the film thickness is preferably 3 nm or more. This is because if it is thinner than this, pinholes may be generated. In view of contact resistance between the power supply wiring 104 and the common electrode 109, the thickness of the blocking layer 108 is preferably 10 nm or less.
- the film thickness is preferably 2 nm or more and 5 nm or less.
- the reason why the film thickness is made thinner than when the blocking layer 108 includes the same material as that of the hole injection layer 105 is that the alkali metal fluoride material is more easily insulated than the material of the hole injection layer 105. .
- the electron transport layer 109 is formed by doping an organic material having an electron transport property, which is a base material, with an alkali metal or an alkaline earth metal such as Na, Ba, or Ca.
- organic material include nitro-substituted fluorenone derivatives, thiopyrandioxide derivatives, diphequinone derivatives, perylene tetracarboxyl derivatives, anthraquinodimethane derivatives, fluorenylidenemethane derivatives, anthrone derivatives, oxalates described in JP-A-5-163488.
- Examples include diazole derivatives, perinone derivatives, and quinoline complex derivatives.
- the common electrode 110 is preferably formed of a material having high transparency and high conductivity.
- a material having high transparency and high conductivity For example, indium tin oxide and zinc oxide are suitable materials.
- the plurality of experimental devices basically have a common configuration.
- the configuration of the experimental device 30 of Sample 1 will be described.
- FIG. 3 is a cross-sectional view schematically showing the configuration of the experimental device 30.
- the experimental device 30 includes a pixel electrode 40, a hole injection layer 33 formed on the pixel electrode 40, and a partition wall having an opening formed on the hole injection layer 33. 34, the light emitting layer 35 formed in the opening, the electron transport layer 36 formed on the light emitting layer 35, the common electrode 37 formed on the electron transport layer 36, and the common electrode 37.
- a sealing layer 38 and a sealing can 39 formed on the sealing layer 38 are provided.
- a laminated structure of ACL 31 and IZO 32 is adopted as the pixel electrode 40, the film thickness of ACL 31 is 200 nm, and the film thickness of IZO 32 is 16 nm.
- WOx was used as the hole injection layer 33, and the film thickness was 5 nm.
- An acrylic resin was used as the partition wall 34, and its film thickness was 1 ⁇ m.
- the partition wall 34 contains fluorine in order to improve liquid repellency. Further, after the partition wall 34 was formed, UV irradiation treatment was performed for 90 s on the opening of the partition wall 34.
- Polyparaphenylene vinylene (PPV) was used as the light emitting layer 35, and the film thickness was 50 nm.
- An organic ETL material doped with Ba was used as the electron transport layer 36, and the film thickness was set to 35 nm. However, Ba is 10% by weight.
- ITO was used as the common electrode 37, and its film thickness was 35 nm.
- SiN was used as the sealing layer 38, and its film thickness was 620 nm.
- Sample 2-6 and Sample 11-17 have the same configuration as Sample 1.
- Sample 21-27 also basically has the same configuration as Sample 1. However, in Sample 21-27, considering the possibility that some deposits exist as the partition wall material residue on the surface of the hole injection layer, UV irradiation treatment is performed on the partition wall opening for 300 s. Further, vacuum baking was performed to remove the deposits. The vacuum baking process was performed at 200 ° C. for 60 minutes.
- Sample 31-37 also basically has the same configuration as Sample 1. However, Sample 31-37 uses an inorganic substance instead of a resin as a material for the partition wall in order to determine the origin of the adhered substance in consideration of the possibility that the adhered substance exists. It was. That is, a partition material that does not generate organic residues was used. Specifically, SiN was used as the partition wall material.
- FIG. 4 is a diagram showing the contact resistance in each sample.
- the vertical axis represents the resistance value ( ⁇ ).
- the resistance values of Sample 31-37 are within the range of 1.0E + 04 ⁇ to 1.0E + 05 ⁇ .
- Sample 11 is smaller than 1.0E + 05 ⁇ , but larger than the resistance values of Sample 21-27 and Sample 31-37.
- FIG. 5 is a cross-sectional view schematically showing the configuration of the experimental device 50.
- the experimental device 50 includes a pixel electrode 60, a hole injection layer 53 formed on the pixel electrode 60, and a partition wall having an opening formed on the hole injection layer 53. 54, a light emitting layer 55 formed in the opening, an electron transport layer 56 formed on the light emitting layer 55, and a common electrode 57 formed on the electron transport layer 56.
- a laminated structure of ACL 51 and IZO 52 is adopted as the pixel electrode 50, the film thickness of ACL 51 is 200 nm, and the film thickness of IZO 52 is 10 nm.
- WOx was used as the hole injection layer 53, and the film thickness was 5 nm.
- an acrylic resin was used as the partition wall 54, and its film thickness was 1 ⁇ m.
- the partition 54 contains fluorine in order to improve liquid repellency.
- Polyparaphenylene vinylene (PPV) was used as the light emitting layer 55, and the film thickness was 50 nm.
- As the electron transport layer 56 an organic ETL material doped with Ba was used, and the film thickness was set to 35 nm. However, Ba is 10% by weight.
- AL was used as the common electrode 57, and its film thickness was 35 nm.
- the SIMS was performed on the part indicated by the arrow A in the experimental device 50.
- FIG. 6A is a diagram showing the analysis result by SIMS, and shows fluorine (F) as a component.
- FIG. 6B is a diagram showing the analysis result by SIMS, and shows tungsten oxide (WO3-) as a component.
- the vertical axis represents Intensity (counts / sec)
- the horizontal axis represents sputtering time.
- the experimental device 50 has a portion where a fluorine (F) peak exists.
- fluorine (F) should not exist. .
- the partition wall 54 contains fluorine (F) as a component for imparting liquid repellency. For this reason, it is thought that the residue at the time of forming the partition 54 remains.
- tungsten oxide (WO3-) and fluorine (F) are at substantially the same position. That is, this means that tungsten oxide (WO3-) is trapping fluorine (F).
- a layer for example, a layer made of tungsten oxide that traps fluorine (F) under the electron transport layer 36 so as to cover organic residues. It can be said that forming is effective.
- a blocking layer 108 is interposed between the hole injection layer 105 and the electron transport layer 109.
- the blocking layer 108 is made of, for example, tungsten oxide, and blocks the movement of fluorine (F) to the electron transport layer 109. Therefore, it is possible to suppress an increase in contact resistance due to fluorine (F).
- -Production method- 7 and 8 are diagrams illustrating an example of a manufacturing process of the light emitting device 1. 7 and 8, a part of the light emitting device 1 is extracted and schematically shown.
- an interlayer insulating film 102 is formed on the TFT substrate 101.
- a thin film made of a conductive material is formed on the interlayer insulating film 102.
- a vacuum film forming method such as a sputtering method or a vacuum vapor deposition method can be used.
- patterning is performed by photolithography to form the pixel electrode 103 and the power supply wiring 104 at positions separated from each other as shown in FIG. 7B.
- the pixel electrode 103 and the power supply wiring 104 are formed using the same material, they can be formed in the same process, so that the manufacturing process can be simplified.
- the hole injection layer 105 made of, for example, WOx is formed on the interlayer insulating film 102 across the pixel electrode 103 and the power supply wiring 104. Is deposited.
- a vacuum film formation method such as a sputtering method or a vacuum evaporation method can be used.
- a partition wall material layer made of an insulating organic material is formed on the hole injection layer 105.
- the partition material layer can be formed, for example, by coating.
- a mask having an opening having a predetermined shape is overlaid on the partition wall material layer, exposed to light from above the mask, and then the excess partition wall material layer is washed out with a developer. Thereby, patterning of the partition wall material layer is completed.
- the partition 106 having the first opening 106a and the second opening 106b is formed.
- a partition material residue 1061 is attached to a region of the hole injection layer 105 exposed from the second opening 106b.
- a composition ink containing a light emitting material is dropped onto the hole injection layer 105 in a region exposed from the first opening 106a, for example, by an inkjet method, and the composition ink is dried to form the light emitting layer 107. (FIG. 8A).
- a blocking layer 108 is formed on the hole injection layer 105 in a region exposed from the second opening 106b (see FIG. 8B).
- the barrier layer 108 can be formed by a vacuum film formation method such as a sputtering method or a vacuum evaporation method.
- the blocking layer 108 may be formed of the same material as the hole injection layer 105. By doing so, the deposition cost of the blocking layer 108 can be reduced.
- the electron transport layer 109 and the common electrode 110 are formed over the partition wall 106, the light emitting layer 107, and the blocking layer 108.
- a vacuum film formation method such as a sputtering method or a vacuum evaporation method can be used.
- the blocking layer 108 is formed on the hole injection layer 105 exposed from the second opening 106 of the partition wall 106, and the electron transport layer 109 is formed on the blocking layer 108.
- the electron transport layer 109 and the hole injection layer 105 are isolated by the blocking layer 108, and the residue is transferred to the blocking layer 108. Will be covered. Thereby, since the movement of fluorine contained in the residue to the electron transport layer 109 is blocked, it is possible to prevent Ba doped in the electron transport layer 109 from becoming a fluoride.
- the increase in contact resistance is caused by the fact that Ba doped in the electron transport layer 109 becomes a fluoride and no longer functions as Ba.
- Ba can be prevented from becoming a fluoride, an increase in contact resistance between the power supply wiring 104 and the common electrode 110 can be suppressed.
- FIG. 9 is a partial cross-sectional view schematically showing the configuration of the EL display panel 10a.
- the EL display panel 10a has the same configuration as the EL display panel 10 except that the formation region of the blocking layer 108a is different. Therefore, in FIG. 9, the description of the same components as those of the EL display panel 10 will be omitted, and different portions will be mainly described.
- the blocking layer 108a is also formed on the inner wall 106b1 of the second opening 106b in addition to the region exposed on the hole injection layer 105 from the second opening 106b.
- FIG. 10 is a partial cross-sectional view schematically showing the configuration of the EL display panel 10b.
- the EL display panel 10b has the same configuration as the EL display panel 10 except that the formation region of the blocking layer 108b is different. Therefore, in FIG. 10, the description of the same components as those of the EL display panel 10 is omitted, and different portions will be mainly described below.
- the blocking layer 108 b is formed over the entire partition 106.
- This configuration is advantageous from the viewpoint of the manufacturing process because it is not necessary to etch the blocking layer 108 or the like.
- the blocking layer 108 may be formed before the light emitting layer 107 is formed.
- the blocking layer 108 is made of an alkali metal fluoride material (hereinafter described using “sodium fluoride” as an example)
- the fluorine blocking mechanism in the blocking layer 108 will be described. There are two possible mechanisms for this.
- Sodium fluoride is present in the blocking layer 108.
- the blocking layer 108 is made of sodium fluoride, but fluorine and sodium are also present alone in the blocking layer 108. Therefore, as a first blocking mechanism, it is considered that sodium present in the blocking layer 108 is bonded to fluorine contained in the residue, thereby blocking the movement to the electron transport layer 109.
- As a second blocking mechanism it is considered that movement to the electron transporting layer 109 is blocked by repulsion of fluorine present in the blocking layer 108 and fluorine contained in the residue.
- the present invention can be used for a light emitting device including an EL display panel.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
本発明の一態様である発光装置は、基板と、前記基板上に形成された、発光層に電力を供給するための配線と、前記配線を跨いで前記基板上に形成された遷移金属酸化物層と、前記遷移金属酸化物層上に形成され、前記配線上に開口部を有する隔壁と、前記開口部から露出した前記遷移金属酸化物層上に形成された、フッ素の移動を遮断する遮断層と、前記遮断層上に形成され、アルカリ金属がドープされてなる有機層と、前記有機層上に形成され、前記有機層、前記遮断層、および前記遷移金属酸化物層を介して前記配線と電気的に接続されることで、前記配線から供給された電力を前記発光層に提供する電極とを有するとした。
<実施の形態1>
-発光装置1の全体構成-
図1は、発光装置1の全体構成を模式的に示すブロック図である。発光装置1は、EL表示パネル10と、これに接続された駆動制御部20とを備えている。EL表示パネル10は、例えば、有機材料の電界発光現象を利用した、トップエミッション型の有機EL表示パネルである。駆動制御部20は、4つの駆動回路21~24と制御回路25とから構成されている。
-EL表示パネル10の構成-
図2は、EL表示パネル10の構成を模式的に示す部分断面図である。なお、図2では、EL表示パネル10の一部を抜き出して模式的に示している。EL表示パネル10は、TFT基板101と、層間絶縁膜102と、画素電極103と、電力供給配線104と、正孔注入層105と、隔壁106と、発光層107と、遮断層108と、電子輸送層109と、共通電極110とを備えている。以下、EL表示パネル10の積層構造について詳細に説明する。
-EL表示パネル10の各層の材料-
続いて、EL表示パネル10における各層の材料について詳細に説明する。
TFT基板101は、基板本体上に、TFT、電力供給配線部材、およびTFTを被覆するパッシベーション膜などを形成した構成である。TFTは、チャネル材料にシリコンを用いたものでも、インジウムガリウム亜鉛酸化物などの酸化物半導体を用いたものでも、ペンタセンなどの有機半導体を用いたものでもよい。基板本体は、例えば、無アルカリガラス、ソーダガラス、無蛍光ガラス、燐酸系ガラス、硼酸系ガラス、石英、アクリル系樹脂、スチレン系樹脂、ポリカーボネート系樹脂、エポキシ系樹脂、ポリエチレン、ポリエステル、シリコーン系樹脂、又はアルミナ等の絶縁性材料からなる。また、基板本体は、有機樹脂フィルムであってもかまわない。
層間絶縁膜102は、ポリイミド系樹脂またはアクリル系樹脂等の絶縁材料からなる。
画素電極103は、特に限定されるものではないが、光反射性の材料で形成されていることが好ましい。金属、導電性酸化物、および導電性高分子は、好適な材料である。金属の例として、例えばアルミニウム、銀合金、モリブデン、タングステン、チタン、クロム、ニッケル、亜鉛およびその合金が挙げられる。導電性酸化物の例として、インジウムスズ酸化物、インジウム亜鉛酸化物、亜鉛酸化物などが挙げられる。導電性高分子として、ポリアニリン、ポリチオフェンおよびそれらを酸性あるいは塩基性の物質と混合したものが挙げられる。
電力供給配線104は、上記-画素電極103-の項目で挙げた各材料を用いることができる。
正孔注入層105は、正孔を発光層107に注入する機能を有する。例えば、酸化タングステン(WOx)、酸化モリブデン(MoOx)、酸化モリブデンタングステン(MoxWyOz)などの遷移金属の酸化物から形成される。遷移金属として、チタン(Ti)、インジウム(In)、スズ(Sn)、亜鉛(Zn)、ニッケル(Ni)を用いることもできる。
隔壁106は、樹脂等の有機材料で形成されており絶縁性を有する。有機材料の例として、アクリル系樹脂、ポリイミド系樹脂、ノボラック型フェノール樹脂等が挙げられる。隔壁106には、撥液性を高めるためにフッ素が含有されている。また、隔壁106は、有機溶剤耐性を有することが好ましい。さらに、隔壁106にはエッチング処理、ベーク処理等がなされるので、それらの処理に対して過度に変形、変質などをしないような耐性の高い材料で形成されることが好ましい。
発光層107が有機発光層である場合には、例えば、ポリフルオレン、ポリフェニレンビニレン、ポリアセチレン、ポリフェニレン、ポリパラフェニレンエチレン、ポリ3-ヘキシルチオフェンやこれらの誘導体などの高分子材料や、特開平5-163488号公報に記載のオキシノイド化合物、ペリレン化合物、クマリン化合物、アザクマリン化合物、オキサゾール化合物、オキサジアゾール化合物、ペリノン化合物、ピロロピロール化合物、ナフタレン化合物、アントラセン化合物、フルオレン化合物、フルオランテン化合物、テトラセン化合物、ピレン化合物、コロネン化合物、キノロン化合物及びアザキノロン化合物、ピラゾリン誘導体及びピラゾロン誘導体、ローダミン化合物、クリセン化合物、フェナントレン化合物、シクロペンタジエン化合物、スチルベン化合物、ジフェニルキノン化合物、スチリル化合物、ブタジエン化合物、ジシアノメチレンピラン化合物、ジシアノメチレンチオピラン化合物、フルオレセイン化合物、ピリリウム化合物、チアピリリウム化合物、セレナピリリウム化合物、テルロピリリウム化合物、芳香族アルダジエン化合物、オリゴフェニレン化合物、チオキサンテン化合物、シアニン化合物、アクリジン化合物、8-ヒドロキシキノリン化合物の金属錯体、2-ビピリジン化合物の金属錯体、シッフ塩とIII族金属との錯体、オキシン金属錯体、希土類錯体等の蛍光物質で形成されることが好ましい。
遮断層108は、フッ素の移動を遮断する機能を有する。遮断層108は、例えば、上記-正孔注入層105-の項目で挙げた何れかの材料を含んで構成されている。また、フッ素と反応し易い金属を含んで構成されていてもよい。フッ素と反応し易い金属として、アルミニウム(Al)、銀(Ag)、マグネシウム(Mg)、タンタル(Ta)を挙げることができる。さらに、フッ素化合物からなるとしてもよい。フッ素化合物を構成する元素としては、例えば、カルシウム、リチウム、ナトリウム(以下、纏めて「フッ化アルカリ金属材料」とも記す。)を挙げることができる。
電子輸送層109は、母材である電子輸送性を有する有機材料に、Na,Ba,Caなどのアルカリ金属またはアルカリ土類金属をドープしてなる。有機材料としては、例えば、特開平5-163488号公報のニトロ置換フルオレノン誘導体、チオピランジオキサイド誘導体、ジフェキノン誘導体、ペリレンテトラカルボキシル誘導体、アントラキノジメタン誘導体、フレオレニリデンメタン誘導体、アントロン誘導体、オキサジアゾール誘導体、ペリノン誘導体、キノリン錯体誘導体が挙げられる。
共通電極110は、透明性が高く、かつ、伝導率が高い材料で形成されることが好ましい。例えば、インジウムスズ酸化物や酸化亜鉛などが好適な材料である。
-実験1-
-実験概要-
電力供給配線と共通電極とのコンタクト抵抗に対する隔壁材料の残渣の影響を評価するために、実験用デバイスを複数(Sample1-6、Sample11-17、Sample21-27、Sample31-37)作製し、それぞれについてコンタクト抵抗を測定した。
複数の実験用デバイスは、基本的には、共通の構成を有している。ここでは、Sample1の実験デバイス30を取り上げてその構成について説明する。
図4は、各Sampleにおけるコンタクト抵抗を示す図である。縦軸が、抵抗値(Ω)を示している。
-実験2-
-実験概要-
実験用デバイスを作製し、正孔注入層に付着した付着物の構成元素をSIMSにより特定した。
図5は、実験用デバイス50の構成を模式的に示す断面図である。図5に示されるように、実験用デバイス50は、画素電極60と、画素電極60上に形成された正孔注入層53と、正孔注入層53上に形成された、開口部を有する隔壁54と、開口部内に形成された発光層55と、発光層55上に形成された電子輸送層56と、電子輸送層56上に形成された共通電極57とを備えている。画素電極50としてACL51とIZO52の積層構造を採用し、ACL51の膜厚を200nm、IZO52の膜厚を10nmとした。正孔注入層53としてWOxを用い、その膜厚を5nmとした。隔壁54としてアクリル系樹脂を用い、その膜厚を1μmとした。また、隔壁54は、撥液性を高めるために、フッ素を含有している。発光層55としてポリパラフェニレンビニレン(PPV)を用いて、その膜厚を50nmとした。電子輸送層56としてBaがドープされた有機ETL材料を用い、その膜厚を35nmとした。ただし、Baは10重量%とする。共通電極57としてALを用い、その膜厚を35nmとした。
図6(a)は、SIMSによる分析結果を示す図であり、成分としてフッ素(F)を示している。図6(b)は、SIMSによる分析結果を示す図であり、成分として酸化タングステン(WO3-)を示している。各図中において、縦軸が、Intensity(counts/sec)であり、横軸が、スパッタリングタイムである。
-製造方法-
図7,8は、発光装置1の製造工程の一例を示す図である。なお、図7,8では、発光装置1の一部を抜き出して模式的に示している。
-効果-
発光装置1では、隔壁106の第2開口部106から露出した正孔注入層105上に遮断層108が形成され、この遮断層108上に電子輸送層109が形成されている。したがって、正孔注入層105上に隔壁材料の残渣が残留していたとしても、電子輸送層109と正孔注入層105とが遮断層108により隔離された上で、その残渣は遮断層108に覆われることになる。これにより、残渣に含まれるフッ素の電子輸送層109への移動は遮断されるので、電子輸送層109にドープされたBaがフッ化物となることを回避することができる。
<変形例1>
遮断層の形成領域を替えた一変形例について説明する。
<変形例2>
遮断層の形成領域を替えた一変形例について説明する。
<その他の変形例>
(1)発光層107の形成後、遮断層108を形成したが、遮断層108の形成は発光層107の形成前でもよい。
(2)遮断層108がフッ化アルカリ金属材料(以下、「フッ化ナトリウム」を例に挙げて説明する。)から構成される場合において、当該遮断層108におけるフッ素遮断のメカニズムについて説明する。このメカニズムとして次の二通り考えられる。
10、10a、10b EL表示パネル
20 駆動制御部
21~24 駆動回路
25 制御回路
101 TFT基板
102 層間絶縁膜
103 画素電極
104 電力供給配線
105 正孔注入層
106 隔壁
107 発光層
108、108a、108b 遮断層
109 電子輸送層
110 共通電極
Claims (17)
- 基板と、
前記基板上に形成された、発光層に電力を供給するための配線と、
前記配線を跨いで前記基板上に形成された遷移金属酸化物層と、
前記遷移金属酸化物層上に形成され、前記配線上に開口部を有する隔壁と、
前記開口部から露出した前記遷移金属酸化物層上に形成された、フッ素の移動を遮断する遮断層と、
前記遮断層上に形成され、アルカリ金属がドープされてなる有機層と、
前記有機層上に形成され、前記有機層、前記遮断層、および前記遷移金属酸化物層を介して前記配線と電気的に接続されることで、前記配線から供給された電力を前記発光層に提供する電極と
を有する発光装置。 - 前記有機層の母材は、電子輸送性を有する有機材料からなる
請求項1に記載の発光装置。 - 前記基板上には、前記配線と同層であって、前記配線と離間した領域に画素電極が形成され、
前記遷移金属酸化物層は、さらに前記画素電極上に形成されている
請求項1に記載の発光装置。 - 前記配線上に形成された前記遷移金属酸化物層と、前記画素電極上に形成された前記遷移金属酸化物層とは、連続している
請求項3に記載の発光装置。 - 前記遮断層は、さらに前記隔壁の前記開口部の内壁に形成されている
請求項1ないし請求項4のいずれか1項に記載の発光装置。 - 前記遮断層は、前記遷移金属酸化物層と同じ材料を含んで形成されている
請求項1ないし請求項5のいずれか1項に記載の発光装置。 - 前記遮断層の厚みは、3nm以上、10nm以下である
請求項6に記載の発光装置。 - 前記遮断層は、フッ化アルカリ金属材料で形成されている
請求項1ないし請求項5のいずれか1項に記載の発光装置。 - 前記フッ化アルカリ金属材料は、フッ化ナトリウムである
請求項8に記載の発光装置。 - 前記遮断層の厚みは、2nm以上、5nm以下である
請求項8または請求項9に記載の発光装置。 - 前記遮断層は、Al、Ag、Mg、Taの何れかを含んで形成されている
請求項1ないし請求項5のいずれか1項に記載の発光装置。 - 前記遷移金属は、Mo、W、Ti、In、Sn、Zn、Niのいずれかである
請求項1ないし請求項11のいずれか1項に記載の発光装置。 - TFT基板上に絶縁層を形成する第1工程と、
前記絶縁層上に、発光層に電力を供給するための配線を形成する第2工程と、
前記配線を跨いで前記絶縁層上に遷移金属酸化物層を形成する第3工程と、
前記遷移金属酸化物層上における、前記配線に対応した領域に開口部を有する隔壁を形成する第4工程と、
前記開口部から露出した前記遷移金属酸化物層上にフッ素の移動を遮断する遮断層を形成する第5工程と、
前記遮断層上に、アルカリ金属がドープされてなる有機層を形成する第6工程と、
前記有機層上に、前記配線から供給された電力を前記発光層に提供する電極を形成する第7工程と
を有する発光装置の製造方法。 - 前記第2工程では、前記絶縁層上の前記配線と同層に、前記配線と離間して画素電極を形成し、
前記第5工程では、前記遮断層を、前記画素電極上に延伸して形成する
請求項13に記載の発光装置の製造方法。 - 前記第3工程では、前記配線および前記画素電極上の全体に亘って前記遷移金属酸化物層を形成する
請求項14に記載の発光装置の製造方法。 - 前記第5工程では、さらに、前記遮断層を、前記隔壁の前記開口部の内壁に形成する
請求項13に記載の発光装置の製造方法。 - 前記第5工程では、前記遮断層を、前記遷移金属酸化物層と同じ材料で形成する
請求項13ないし請求項16のいずれか1項に記載の発光装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/005056 WO2013035136A1 (ja) | 2011-09-08 | 2011-09-08 | 発光装置およびその製造方法 |
JP2012550653A JP5974249B2 (ja) | 2011-09-08 | 2011-09-08 | 発光装置およびその製造方法 |
CN201180025192.6A CN103109387B (zh) | 2011-09-08 | 2011-09-08 | 发光装置及其制造方法 |
US13/671,594 US9089036B2 (en) | 2011-09-08 | 2012-11-08 | Light-emitting device and manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/005056 WO2013035136A1 (ja) | 2011-09-08 | 2011-09-08 | 発光装置およびその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/671,594 Continuation US9089036B2 (en) | 2011-09-08 | 2012-11-08 | Light-emitting device and manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013035136A1 true WO2013035136A1 (ja) | 2013-03-14 |
Family
ID=47829051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2011/005056 WO2013035136A1 (ja) | 2011-09-08 | 2011-09-08 | 発光装置およびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9089036B2 (ja) |
JP (1) | JP5974249B2 (ja) |
CN (1) | CN103109387B (ja) |
WO (1) | WO2013035136A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015141144A1 (ja) * | 2014-03-18 | 2015-09-24 | 株式会社Joled | 有機el素子および有機el素子の製造方法 |
JP2016072118A (ja) * | 2014-09-30 | 2016-05-09 | 株式会社Joled | 表示装置および表示装置の製造方法 |
WO2023281344A1 (ja) * | 2021-07-08 | 2023-01-12 | 株式会社半導体エネルギー研究所 | 表示装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005038833A (ja) * | 2003-06-16 | 2005-02-10 | Semiconductor Energy Lab Co Ltd | 発光装置及び発光装置の作製方法 |
JP2009027154A (ja) * | 2007-06-20 | 2009-02-05 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法、並びに電子機器 |
WO2009075075A1 (ja) * | 2007-12-10 | 2009-06-18 | Panasonic Corporation | 有機elデバイスおよびelディスプレイパネル、ならびにそれらの製造方法 |
JP2011040167A (ja) * | 2008-11-12 | 2011-02-24 | Panasonic Corp | 表示装置およびその製造方法 |
WO2011067895A1 (ja) * | 2009-12-04 | 2011-06-09 | パナソニック株式会社 | 有機elデバイスおよびその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05163488A (ja) | 1991-12-17 | 1993-06-29 | Konica Corp | 有機薄膜エレクトロルミネッセンス素子 |
US5443922A (en) | 1991-11-07 | 1995-08-22 | Konica Corporation | Organic thin film electroluminescence element |
US7221095B2 (en) | 2003-06-16 | 2007-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for fabricating light emitting device |
JP5072271B2 (ja) * | 2005-06-22 | 2012-11-14 | 株式会社半導体エネルギー研究所 | 発光装置、及びそれを用いた電子機器 |
US8017252B2 (en) * | 2005-06-22 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic appliance using the same |
US7994711B2 (en) * | 2005-08-08 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
TWI333803B (en) * | 2006-01-13 | 2010-11-21 | Au Optronics Corp | Organic electro-luminescence device |
US7732351B2 (en) * | 2006-09-21 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device and laser processing apparatus |
JP4954836B2 (ja) * | 2006-09-21 | 2012-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4931858B2 (ja) * | 2008-05-13 | 2012-05-16 | パナソニック株式会社 | 有機エレクトロルミネッセント素子の製造方法 |
US9587172B2 (en) * | 2008-10-01 | 2017-03-07 | Lg Display Co., Ltd. | Organic light-emitting diode and method of manufacturing the same |
WO2011077477A1 (ja) * | 2009-12-22 | 2011-06-30 | パナソニック株式会社 | 表示装置とその製造方法 |
CN102165592B (zh) * | 2009-12-22 | 2014-10-15 | 松下电器产业株式会社 | 显示装置及其制造方法 |
KR20120109532A (ko) * | 2009-12-28 | 2012-10-08 | 스미또모 가가꾸 가부시키가이샤 | 화합물 및 그것을 이용한 유기 전계 발광 소자 |
US9608225B2 (en) * | 2010-01-21 | 2017-03-28 | Samsung Electronics Co., Ltd. | Light emitting device and method of fabricating the same |
-
2011
- 2011-09-08 WO PCT/JP2011/005056 patent/WO2013035136A1/ja active Application Filing
- 2011-09-08 JP JP2012550653A patent/JP5974249B2/ja active Active
- 2011-09-08 CN CN201180025192.6A patent/CN103109387B/zh active Active
-
2012
- 2012-11-08 US US13/671,594 patent/US9089036B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005038833A (ja) * | 2003-06-16 | 2005-02-10 | Semiconductor Energy Lab Co Ltd | 発光装置及び発光装置の作製方法 |
JP2009027154A (ja) * | 2007-06-20 | 2009-02-05 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法、並びに電子機器 |
WO2009075075A1 (ja) * | 2007-12-10 | 2009-06-18 | Panasonic Corporation | 有機elデバイスおよびelディスプレイパネル、ならびにそれらの製造方法 |
JP2011040167A (ja) * | 2008-11-12 | 2011-02-24 | Panasonic Corp | 表示装置およびその製造方法 |
WO2011067895A1 (ja) * | 2009-12-04 | 2011-06-09 | パナソニック株式会社 | 有機elデバイスおよびその製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015141144A1 (ja) * | 2014-03-18 | 2015-09-24 | 株式会社Joled | 有機el素子および有機el素子の製造方法 |
JPWO2015141144A1 (ja) * | 2014-03-18 | 2017-04-06 | 株式会社Joled | 有機el素子および有機el素子の製造方法 |
US10181582B2 (en) | 2014-03-18 | 2019-01-15 | Joled Inc. | Organic EL element comprising first and second interlayers of specified materials and thicknesses, and method for manufacturing thereof |
JP2016072118A (ja) * | 2014-09-30 | 2016-05-09 | 株式会社Joled | 表示装置および表示装置の製造方法 |
WO2023281344A1 (ja) * | 2021-07-08 | 2023-01-12 | 株式会社半導体エネルギー研究所 | 表示装置 |
Also Published As
Publication number | Publication date |
---|---|
US9089036B2 (en) | 2015-07-21 |
JPWO2013035136A1 (ja) | 2015-03-23 |
US20130062658A1 (en) | 2013-03-14 |
CN103109387B (zh) | 2016-02-10 |
JP5974249B2 (ja) | 2016-08-23 |
CN103109387A (zh) | 2013-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5357194B2 (ja) | 発光素子、発光素子を備えた発光装置および発光素子の製造方法 | |
US8519425B2 (en) | Light-emitting device and manufacturing method thereof | |
JP5785808B2 (ja) | 有機el表示パネルおよびその製造方法 | |
US9000430B2 (en) | EL display device and method for producing same | |
US9620560B2 (en) | EL display device and method for manufacturing same | |
JP6019376B2 (ja) | 有機el表示パネル | |
JP6232655B2 (ja) | 有機el表示パネルおよびその製造方法 | |
WO2013118462A1 (ja) | El表示装置およびその製造方法 | |
US9171894B2 (en) | Organic EL element, organic EL panel, organic EL light-emitting apparatus and organic EL display apparatus | |
WO2012001728A1 (ja) | 有機el表示パネル、有機el表示パネルを備えた表示装置、および有機el表示パネルの製造方法 | |
JP6471308B2 (ja) | 表示装置および表示装置の製造方法 | |
JP5620495B2 (ja) | 発光素子、発光素子を備えた発光装置および発光素子の製造方法 | |
US9246138B2 (en) | Light-emitting panel, manufacturing method of light-emitting panel, and film forming system | |
JP5974249B2 (ja) | 発光装置およびその製造方法 | |
US20170117347A1 (en) | Organic light-emitting device and production method for organic light-emitting device | |
JP6111483B2 (ja) | 有機el素子とその製造方法、有機elパネル、有機el発光装置、および有機el表示装置 | |
US10581019B2 (en) | Organic EL element having reduced electric power consumption by optimizing film thicknesses thereof and method of manufacturing same | |
US10026795B2 (en) | Organic EL element and method for manufacturing organic EL element | |
JP2016076418A (ja) | 有機el素子 | |
JP2016100280A (ja) | 有機elパネル |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201180025192.6 Country of ref document: CN |
|
ENP | Entry into the national phase |
Ref document number: 2012550653 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11872064 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 11872064 Country of ref document: EP Kind code of ref document: A1 |