WO2013031823A1 - Substrat à matrice active et écran d'affichage à cristaux liquides - Google Patents

Substrat à matrice active et écran d'affichage à cristaux liquides Download PDF

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Publication number
WO2013031823A1
WO2013031823A1 PCT/JP2012/071817 JP2012071817W WO2013031823A1 WO 2013031823 A1 WO2013031823 A1 WO 2013031823A1 JP 2012071817 W JP2012071817 W JP 2012071817W WO 2013031823 A1 WO2013031823 A1 WO 2013031823A1
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Prior art keywords
electrode
signal line
liquid crystal
hole
data signal
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PCT/JP2012/071817
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English (en)
Japanese (ja)
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古川　智朗
祐子 久田
明比　康直
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シャープ株式会社
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to an active matrix substrate and a liquid crystal display panel. More specifically, the present invention relates to an active matrix substrate having a plurality of electrodes with an insulating film interposed therebetween, and a liquid crystal display panel including the active matrix substrate.
  • a liquid crystal display (LCD) panel is a device that controls light transmission / blocking (display on / off) by controlling the orientation of liquid crystal molecules having birefringence.
  • the liquid crystal alignment mode of LCD includes TN (TwistedmaticNematic) mode in which liquid crystal molecules having positive dielectric anisotropy are aligned 90 ° when viewed from the normal direction of the substrate, negative anisotropic dielectric constant Vertical alignment (VA: Vertical Alignment) mode in which liquid crystal molecules having a property are aligned perpendicularly to the substrate surface, and liquid crystal molecules having positive or negative dielectric anisotropy are horizontally aligned with respect to the substrate surface to form a liquid crystal layer
  • IPS in-plane switching
  • FFS fringe field switching
  • an active matrix driving method in which an active element such as a thin film transistor (TFT) is arranged for each pixel to realize high image quality is widely used.
  • An LCD panel including a TFT includes an active matrix substrate in which a plurality of scanning signal lines and a plurality of data signal lines are formed so as to intersect each other, and a TFT and a pixel electrode are provided at each of these intersections. (See, for example, Patent Documents 1 and 2).
  • a common electrode is further provided on an active matrix substrate or a counter substrate, and a voltage is applied to the liquid crystal layer through a pair of electrodes.
  • FIG. 40 is a schematic plan view showing an example of a conventional active matrix substrate.
  • the TFT 253 includes a semiconductor layer 254, a gate electrode 255a, a source electrode 255b, and a drain electrode 255c.
  • the gate electrode 255a is a scanning signal line 251
  • the source electrode 255b is a data signal line 213
  • the drain electrode 255c is a pixel electrode 217.
  • Each is connected. More specifically, the drain electrode 255c is connected to the pixel electrode 217 via the drain lead-out wiring 252 and contact portions 263a and 263b provided through the insulating film.
  • a current flows from the data signal line 213 to the drain electrode 255c while the TFT 253 is ON, and a voltage can be applied to the liquid crystal layer sandwiched between the pixel electrode 217 and the common electrode located on the counter substrate side.
  • the orientation direction of the liquid crystal molecules can be changed by ON / OFF of voltage application, and ON / OFF of the liquid crystal display can be controlled.
  • the storage electrode 217 and the pixel electrode 217 are held by providing a storage capacitor wiring 257 that extends in parallel with the scanning signal line 251 and is partially branched to increase the overlapping area with the pixel electrode 217.
  • Capacitance can be formed between the capacitor wirings 257, and the liquid crystal formed by the pixel electrode 217 and the common electrode located on the counter substrate side after the TFT 253 is turned off until the TFT 253 is turned on next time.
  • the capacity of the capacity Clc can be stabilized.
  • the storage capacitor wiring 257 is generally formed in the same layer using the same material as the scanning signal line 251.
  • a first transparent electrode is formed on a scanning signal line, a data signal line, and a TFT formed on a glass substrate via a first insulating film, and the transparent electrode
  • a second transparent electrode (pixel electrode) is further formed thereon via a second insulating film, and the pixel electrode and the drain electrode of the TFT have contact holes provided in the first insulating film and the second insulating film.
  • a configuration in which the connection is made via the above-described configuration is given.
  • a storage capacitor can be formed between the first transparent electrode and the pixel electrode, and a pixel having a high aperture ratio can be formed. it can.
  • the first transparent electrode is disposed between the various wirings such as the scanning signal line and the data signal line and the pixel electrode, the parasitic capacitance is not generated between the various wirings and the pixel electrode, and the driving is performed. Since the load due to is reduced, there is little loss and lower power consumption is possible.
  • the present inventors have studied a means for performing laser repair on an active matrix substrate having such a configuration.
  • a liquid crystal display panel is manufactured, a pair of substrates are bonded, and these substrates are bonded. If defects are found in the inspection process after injecting the liquid crystal between them or dropping the liquid crystal on one of the pair of substrates and bonding them together, the conventional laser repair method will It became clear that there were cases where it could not be corrected.
  • FIG. 41 and 42 are schematic cross-sectional views showing how laser repair is performed by a conventional method after a pair of substrates are bonded together.
  • FIG. 41 shows before laser irradiation
  • FIG. 42 shows after laser irradiation.
  • a glass substrate 111 is used as a base, and a gate insulating film 112, a data signal line 113, a first insulating film 114, a common electrode 115, a second insulating film 116, and a pixel are formed on the glass substrate 111.
  • the layers of the electrodes 117 are laminated in this order, as shown in FIG.
  • an edge portion or a fragment of the data signal line 113 that receives the laser irradiation. May be pushed through the first insulating film 114 and come into contact with the upper common electrode 115, causing a leak between the data signal line 113 and the common electrode 115.
  • the present invention has been made in view of the above-described situation, and provides an active matrix substrate that can be easily repaired with a laser for defect repair even if there is another electrode above the short-circuited data signal line. It is for the purpose.
  • the inventors of the present invention have studied various methods for preventing the portion irradiated with the laser from causing a defect again, and have provided a through hole (through hole) in a part of the electrode overlapping the data signal line. Pay attention. If a through hole is provided in a part of the electrode in advance and the position where it overlaps is secured as a place for laser repair, even if laser irradiation is performed and the edge part or fragment of the data signal line breaks through the first insulating film, Because there is no possibility of occurrence of a short circuit at the top, no new short circuit occurs. Further, since such a through hole only needs to be provided in a part of the electrode, it is not necessary to greatly change the original shape of the electrode.
  • an insulating substrate a scanning signal line, a data signal line, a thin film transistor connected to the scanning signal line and the data signal line, a first insulating film, and the first insulating film
  • a first electrode covering the data signal line through the first electrode, and a through hole having a diameter wider than the width of the data signal line at the overlapping position at the position overlapping the data signal line.
  • a data signal is supplied to the thin film transistor (TFT) through a data signal line.
  • the subsequent supply of the data signal is controlled by the switching function of the thin film transistor based on the scanning signal supplied from the scanning signal line.
  • a first electrode that covers the data signal line is disposed on the active matrix substrate via an insulating film.
  • the purpose of the present invention is to prevent a short circuit with another conductive member at the time of laser repair of the data signal line. Therefore, the purpose and function of the first electrode are not particularly limited as long as it has conductivity. That is, what is called a “wiring” is also included in the first electrode.
  • the first electrode is provided with a through hole having a diameter wider than the line width of the data signal line at the overlapping position at a position overlapping the data signal line.
  • the size of the through hole needs to be at least large enough not to cause a short circuit again at the time of laser repair.
  • the “diameter” of the through hole refers to the width of the portion of the through hole having the largest linear distance in the line width direction of the data signal line.
  • the configuration of the active matrix substrate is not particularly limited by other components as long as such components are essential.
  • preferred modes of the active matrix substrate will be described in detail.
  • the form which combined two or more each preferable form of the said active matrix substrate described below is also a preferable form of the said active matrix substrate.
  • the active matrix substrate further includes a second insulating film and a second electrode, and the second electrode is a lead-out wiring from the thin film transistor via a connection portion provided in the second insulating film. It is preferable that it is connected with.
  • the through hole of the first electrode is preferably provided so as to cross the thin film transistor or the scanning signal line. This makes it possible to secure a plurality of laser repair locations with one opening without providing a plurality of openings with the TFT interposed between the first electrodes.
  • a through hole is provided in each of the second insulating film and the second electrode in a region overlapping the through hole of the first electrode, and the through hole of the second insulating film and the through hole of the second electrode are provided. It is preferable that the hole and the through hole of the first electrode are integrated. That is, in this embodiment, the surface of the first insulating film is exposed. Variations in design can be increased by providing through holes in the second insulating film and the second electrode as well as the first electrode.
  • a plurality of through holes of the first electrode are formed so as to sandwich the thin film transistor when the active matrix substrate is viewed in plan.
  • the data signal line has a branch portion extending toward the thin film transistor, and the through hole of the first electrode is formed to overlap the branch portion when the active matrix substrate is viewed in plan view. Is preferred. In the case of a structure in which a part of the data signal line is drawn out and connected to the thin film transistor, pay attention to the branch part drawn out from the data signal line, and the through hole of the first electrode is formed so as to overlap the branch part. By providing, it is possible to stop the signal supply only for the thin film transistor connected to the branch portion, and not to operate only some of the pixels in which defects occur.
  • Another aspect of the present invention includes a first substrate, a second substrate, and the first substrate and a liquid crystal layer sandwiched between the second substrate, and the first substrate is the active matrix of the present invention. It is a liquid crystal display panel which is a substrate.
  • the first substrate and the second substrate are substrates for sandwiching a liquid crystal layer.
  • an insulating substrate such as glass or resin is used as a base, and wiring, electrodes, color filters, etc. are provided on the insulating substrate. It is made with.
  • the configuration of the liquid crystal display panel is not particularly limited by other components as long as such components are essential.
  • preferred embodiments of the liquid crystal display panel will be described in detail.
  • the form which combined two or more each preferable form of the said liquid crystal display panel described below is also a preferable form of the said liquid crystal display panel.
  • the preferable form of the active matrix substrate of the present invention can be applied as it is.
  • a black matrix is preferably provided at a position overlapping the through hole of the first electrode.
  • the area overlapping the through hole of the first electrode causes irregularities at the interface between the substrate surface and the liquid crystal layer due to laser-cut wiring debris and damage to other components, causing alignment disorder of the liquid crystal molecules. Since this is a region that can be covered, it is possible to suppress a decrease in contrast by shielding the region irradiated with laser light.
  • an insulating columnar spacer is provided at a position overlapping with the through hole of the first electrode.
  • a through hole is provided in each of the second insulating film and the second electrode in a region overlapping the through hole of the first electrode, and the through hole of the second insulating film and the through hole of the second electrode are provided. It is preferable that the hole and the through hole of the first electrode are integrated, and the insulating columnar spacer is fitted in the integrated through hole. As a result, it is possible to receive the pressure from the columnar spacers and make it difficult for the data signal line fragments during the laser repair to scatter, and the columnar spacers inserted into the through-holes cause a shift between the two substrates. Can be prevented.
  • the first electrode is preferably a flat common electrode
  • the second electrode is preferably a comb-shaped pixel electrode.
  • FFS mode liquid crystal display panel
  • the aperture ratio of the pixel can be secured widely, and parasitic capacitance between the pixel electrode and other wiring is less likely to occur, so that liquid crystal alignment is less likely to occur, The transmittance is improved. Further, the load due to driving is reduced, which contributes to low power consumption.
  • the second substrate further includes a flat common electrode, and the second electrode is preferably a flat pixel electrode.
  • the active matrix substrate and the liquid crystal display panel of the present invention it is possible to easily perform laser repair on data signal lines while preventing leakage with other electrodes.
  • FIG. 3 is a schematic perspective view illustrating a liquid crystal alignment state of the liquid crystal display panel of Embodiment 1.
  • FIG. It is a cross-sectional schematic diagram which shows the laser repair area
  • 2 is a schematic plan view of an active matrix substrate in Embodiment 1.
  • FIG. 4 is a schematic plan view mainly showing common electrodes, data signal lines, and drain lead lines of the active matrix substrate in Embodiment 1.
  • FIG. FIG. 3 is a schematic plan view illustrating a black matrix arrangement location in the first embodiment.
  • FIG. 3 is a schematic cross-sectional view showing an arrangement location in a laser repair region of a black matrix in the first embodiment. It is a cross-sectional schematic diagram which shows the modification of the liquid crystal display panel of Embodiment 1, and represents the time of laser irradiation. It is a cross-sectional schematic diagram which shows the modification of the liquid crystal display panel of Embodiment 1, and represents after laser irradiation.
  • 6 is a schematic plan view of an active matrix substrate in Embodiment 2.
  • FIG. FIG. 10 is a schematic plan view illustrating a black matrix arrangement location in the second embodiment. 6 is a schematic plan view of an active matrix substrate in Embodiment 3.
  • FIG. FIG. 9 is a schematic plan view showing a black matrix arrangement location in Embodiment 3.
  • FIG. 10 is a schematic plan view of an active matrix substrate in Embodiment 4.
  • FIG. FIG. 6 is a schematic plan view illustrating a black matrix arrangement location in a fourth embodiment.
  • 10 is a schematic plan view illustrating a first modification of the liquid crystal display panel of Embodiment 4.
  • FIG. 10 is a schematic plan view showing a black matrix arrangement location in a first modification of the liquid crystal display panel of Embodiment 4.
  • 10 is a schematic plan view illustrating a second modification of the liquid crystal display panel of Embodiment 4.
  • FIG. FIG. 10 is a schematic plan view showing a black matrix arrangement location in a second modification of the liquid crystal display panel of Embodiment 4.
  • FIG. 10 is a schematic plan view of an active matrix substrate in Embodiment 5.
  • FIG. 5 is a schematic plan view illustrating a black matrix arrangement location in a fourth embodiment.
  • FIG. 10 is a schematic plan view showing a black matrix arrangement place in Embodiment 5.
  • FIG. 21 is a schematic cross-sectional view taken along the line CD in FIG. 20 and shows the time of laser irradiation in the first example.
  • FIG. 21 is a schematic cross-sectional view taken along the line CD in FIG. 20 and shows the first example after laser irradiation.
  • FIG. 21 is a schematic cross-sectional view taken along the line CD in FIG. 20 and shows the time of laser irradiation in the second example.
  • FIG. 21 is a schematic cross-sectional view taken along the line CD in FIG. 20 and shows the second example after laser irradiation.
  • FIG. 21 is a schematic cross-sectional view taken along the line CD in FIG.
  • FIG. 10 is a schematic plan view of an active matrix substrate in Embodiment 6.
  • FIG. 10 is a schematic plan view illustrating a black matrix arrangement location in a sixth embodiment.
  • FIG. 10 is a schematic perspective view illustrating a liquid crystal alignment state of a liquid crystal display panel of Embodiment 7.
  • FIG. 10 is a schematic plan view showing an active matrix substrate in Embodiment 7.
  • FIG. 16 is a schematic plan view mainly showing a lower layer electrode, a data signal line, and a drain lead wiring of an active matrix substrate in Embodiment 7.
  • FIG. 10 is a schematic plan view showing a place where a black matrix is arranged in Embodiment 7.
  • FIG. 10 is a schematic plan view showing a liquid crystal display panel of Embodiment 8.
  • FIG. 16 is a schematic plan view showing a black matrix arrangement place in the liquid crystal display panel of Embodiment 8.
  • 10 is a schematic perspective view illustrating a liquid crystal alignment state of a liquid crystal display panel of Embodiment 9.
  • FIG. 10 is a schematic plan view showing an active matrix substrate in Embodiment 9.
  • FIG. FIG. 16 is a schematic plan view mainly showing a lower layer electrode, a data signal line, and a drain lead wiring of an active matrix substrate in Embodiment 9.
  • FIG. 10 is a schematic plan view showing a black matrix arrangement place in Embodiment 9.
  • the “pixel” means a region surrounded by two adjacent scanning signal lines and two adjacent data signal lines.
  • the “region” is a concept including not only a plane but also its depth when viewed from the normal direction of the active matrix substrate surface.
  • a plurality of spare wirings are provided at positions that can be connected to data signal lines by laser irradiation.
  • Each spare line is provided so as to partially overlap the data signal line, for example, to cross the data signal line through an insulating film, and the data signal line and the spare line are melted using a laser.
  • a display screen is composed of a plurality of pixels such as an organic EL display device.
  • the present invention can be applied as long as it is.
  • the following first to ninth embodiments can be applied to display devices such as a television, a personal computer, a mobile phone, a car navigation system, and an information display.
  • Embodiment 1 shows an example of an FFS mode liquid crystal display panel.
  • FIG. 1 is a schematic perspective view illustrating a liquid crystal alignment state of the liquid crystal display panel according to the first embodiment.
  • the liquid crystal display panel of Embodiment 1 includes an active matrix substrate (first substrate) 10, a counter substrate (second substrate) 20, and a liquid crystal layer 40 sandwiched between the active matrix substrate 10 and the counter substrate 20.
  • the liquid crystal layer 40 contains liquid crystal molecules 41 and is aligned in a horizontal direction with respect to the substrate surfaces 10 and 20.
  • the active matrix substrate includes an insulating substrate, a TFT, a scanning signal line, a data signal line, a common electrode, a pixel electrode, an insulating film that electrically isolates the various wirings or electrodes, and an alignment film.
  • the counter substrate includes an insulating substrate, a color filter, a black matrix, and an alignment film. The color filter and the black matrix may be provided not on the counter substrate side but on the active matrix substrate side.
  • the active matrix substrate 10 includes a transparent insulating substrate 11, a gate insulating film 12, a data signal line 13, a first insulating film 14, a common electrode (first electrode) 15, and a second insulating material.
  • the film 16 and the pixel electrode (second electrode) 17 are stacked in this order toward the liquid crystal layer 40 side.
  • the counter substrate 20 is disposed at a position facing the active matrix substrate 10 across the liquid crystal layer 40. Based on the potential difference between the common electrode 15 and the pixel electrode 17, a horizontal electric field (arc-shaped electric field when viewed in cross section) is formed in the liquid crystal layer 40, thereby changing the orientation of the liquid crystal molecules. Therefore, the birefringence of light transmitted through the liquid crystal layer 40 can be changed using this.
  • the liquid crystal layer 40 is sandwiched between the active matrix substrate 10 and the counter substrate 20.
  • the first embodiment when laser repair is performed, laser irradiation is performed from the insulating substrate 11 side toward the data signal line 13 as indicated by an arrow in FIG.
  • the data signal line 13 When the laser is applied to the data signal line 13, as shown in FIG. 3, the data signal line 13 is pushed during the laser irradiation, and the edge portion or the fragment 13a of the data signal line breaks through the first insulating film 14.
  • the common electrode 15 since the common electrode 15 has a through hole (through hole) having a diameter wider than the line width of the data signal line 13, the edge portion or the fragment of the data signal line 13 is common. Contact with the electrode 15 is eliminated, and leakage between the data signal line 13 and the common electrode 15 can be prevented.
  • FIG. 4 is a schematic plan view of the active matrix substrate in the first embodiment.
  • FIG. 5 is a schematic plan view mainly showing the common electrode, the data signal line, and the drain lead wiring of the active matrix substrate in the first embodiment.
  • the scanning signal lines 51 and the data signal lines 13 are arranged so as to cross each other and surround the pixel electrodes 17.
  • a TFT (thin film transistor) 53 is provided in the vicinity of the contact point between the scanning signal line 51 and the data signal line 13.
  • a region represented by “x” is a laser repair region.
  • the TFT 53 is a switching element including a semiconductor layer 54, a gate electrode 55a, a source electrode 55b, and a drain electrode 55c.
  • the gate electrode 55a of the TFT 53 is configured by extracting a part of the scanning signal line 51.
  • the source electrode 55 b of the TFT 53 is connected to the semiconductor layer 54 via the contact portion 61, and the drain electrode 55 c of the TFT 53 is connected to the semiconductor layer 54 via the contact portion 62.
  • a lead-out wiring (drain lead-out wiring) 52 is further extended from the drain electrode 55 c of the TFT 53.
  • the drain lead-out wiring 52 extends to the vicinity of the center of the pixel via the bent portion, has a wide area near the center of the pixel, and is connected to the pixel electrode 17 via the contact portion 63.
  • the gate electrode 55a and the semiconductor layer 54 overlap each other with a gate insulating film interposed therebetween.
  • the contact portions 61, 62, 63 use holes provided in the first insulating film and the second insulating film.
  • the source electrode 55 b is connected to the drain electrode 55 c through the semiconductor layer 54, and the amount of current flowing through the semiconductor layer 54 is adjusted by the scanning signal input to the gate electrode through the scanning signal line 51, and the data signal line 13 is adjusted. The transmission of the data signal input in this order through the source electrode 55b, the semiconductor layer 54, the drain electrode 55c, the drain lead wiring 52, and the pixel electrode 17 is controlled.
  • the pixel electrode 17 is a plurality of comb-shaped electrodes arranged in each region surrounded by the scanning signal line 51 and the data signal line 13, and the outer edge has a substantially rectangular shape.
  • the plurality of pixel electrodes 17 are arranged in a matrix.
  • Each pixel electrode 17 has a plurality of slits 17a. Since the pixel electrode 17 has the slit 17a, an arc-shaped electric field formed between the pixel electrode 17 and the common electrode 15 is formed in the liquid crystal layer.
  • Each slit 17 a is formed to extend in a direction inclined by several degrees with respect to a direction parallel to the length direction of the scanning signal line 51.
  • Each slit 17a is not formed in the vicinity of the region where the contact portion 63 connecting the drain lead-out wiring 52 and the pixel electrode 17 is located.
  • the contact portion 63 occupies a substantially central portion of the pixel electrode 17.
  • the plurality of slits 17 a of the pixel electrode 17 have symmetrical shapes with a bisector of the vertical side of the pixel electrode 17 as a boundary line. By having such a symmetric structure, the alignment of the liquid crystal can be balanced.
  • a common signal maintained at a constant value is supplied to the common electrode 15.
  • the common electrode 15 is formed on one surface regardless of the pixel boundary.
  • the common electrode 15 covers substantially the entire data signal line 13 through the first insulating film except for the through holes 71a and 71b overlapping the laser repair region.
  • the common electrode 15 covers substantially the entire scanning signal line 51. Thereby, it is possible to prevent the generation of parasitic capacitance between various wirings and the pixel electrode 17.
  • the common electrode 15 is also provided with a through hole in a region overlapping the contact portion 63 to which the drain lead wiring 52 and the pixel electrode 17 are connected.
  • each through hole 71 has a vertical width of 5 to 10 ⁇ m and a horizontal width of 7 to 15 ⁇ m.
  • the data signal line 13 has a line width of 3 to 7 ⁇ m.
  • the lateral width (diameter) of each through hole is preferably 4 ⁇ m or more larger than the line width of the data signal line 13.
  • the through holes 71 are formed above and below the TFT 53 when the active matrix substrate is viewed in plan. The distance between the upper through hole 71 a and the TFT 53 is substantially the same as the distance between the lower through hole 71 b and the TFT 53.
  • the data signal line 13 By making the data signal line 13 at a position overlapping with the through hole 71 as a laser repair region, it is possible to prevent leakage with other members (specifically, the common electrode 15) when laser repair is performed. Can do. Further, by providing two laser repair regions in the vicinity of the TFT 53 so as to sandwich the TFT 53, the signal supply to the target TFT 53 is stopped so that only the defective pixel is not operated. Can do. Note that when the data signal line 13 is cut by laser irradiation, pixels located in the downstream area stop functioning. This point can be dealt with by using a spare wiring to bypass the correction site. Is possible.
  • FIG. 6 is a schematic plan view showing the arrangement location of the black matrix in the first embodiment.
  • FIG. 7 is a schematic cross-sectional view showing the arrangement location of the black matrix in the laser repair region in the first embodiment, and is also a schematic cross-sectional view taken along the line AB in FIG.
  • the counter substrate 20 includes a transparent insulating substrate 21 and a black matrix 22.
  • the black matrix 22 includes the scanning signal line 51, the data signal line 13, the TFT 53, the through hole 71 of the common electrode 15 that overlaps the laser repair region, and the outer edge (edge portion) of the pixel electrode 17. ).
  • the reason why the black matrix 22 is formed so as to cover the laser repair area is that when laser cutting is performed, in the peripheral area of the area where laser cutting has been performed, there are pieces of wiring after laser cutting or other than those at the time of laser cutting. This is because unevenness occurs at the interface with the liquid crystal layer due to damage to the layer, and the alignment of the liquid crystal is disturbed by the unevenness, which may cause light leakage. That is, the contrast ratio can be improved by covering the laser repair region with the black matrix. Another object is to prevent each color material from being damaged by irradiating the color filter with laser.
  • a transparent material such as glass or plastic is preferably used as the material of the insulating substrates 11 and 21.
  • materials for the gate insulating film 12, the first insulating film 14, and the second insulating film 16 transparent materials such as silicon nitride, silicon oxide, and photosensitive acrylic resin are preferably used.
  • a silicon nitride film is formed by plasma-induced chemical vapor deposition (Plasma ⁇ Enhanced ⁇ ⁇ ⁇ ⁇ Chemical Vapor Deposition: PECVD), and a photosensitive acrylic film is formed on the silicon nitride film.
  • PECVD plasma-induced chemical vapor deposition
  • a resin film is formed by a die coating (coating) method.
  • the holes provided in the first insulating film 14 and the second insulating film 16 for forming the contact portion can be formed by performing dry etching (channel etching).
  • Various electrodes constituting the scanning signal line 51, the data signal line 13, the drain lead-out wiring 52, and the TFT 53 are made of a single layer of a metal such as titanium, chromium, aluminum, molybdenum, or an alloy thereof by sputtering or the like. Alternatively, it can be formed by forming a film with a plurality of layers and then performing patterning by a photolithography method or the like. About these various wiring and electrodes formed on the same layer, the manufacturing efficiency is improved by using the same material.
  • the semiconductor layer 54 of the TFT 53 is configured by, for example, a high-resistance semiconductor layer made of amorphous silicon, polysilicon, or the like, and a low-resistance semiconductor layer made of n + amorphous silicon or the like in which amorphous silicon is doped with an impurity such as phosphorus.
  • a high-resistance semiconductor layer made of amorphous silicon, polysilicon, or the like
  • a low-resistance semiconductor layer made of n + amorphous silicon or the like in which amorphous silicon is doped with an impurity such as phosphorus.
  • an oxide semiconductor film semiconductor layer such as zinc oxide may be used.
  • the shape of the semiconductor layer 54 can be determined by forming a film by a PECVD method or the like and then patterning the film by a photolithography method or the like.
  • the pixel electrode 17 and the common electrode 15 are formed by sputtering a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), or an alloy thereof. After a single layer or a plurality of layers are formed by a method or the like, patterning can be performed using a photolithography method.
  • the slit 17a provided in the pixel electrode 17 and the through hole 71 provided in the common electrode 15 can also be formed simultaneously with patterning.
  • a photosensitive resin that transmits light corresponding to each color
  • the material of the black matrix 22 is not particularly limited as long as it has a light shielding property, and a resin material containing a black pigment or a metal material having a light shielding property is preferably used.
  • the active matrix substrate 10 and the counter substrate 20 thus manufactured are provided with a plurality of columnar spacers made of an insulating material on one substrate, and then bonded to each other using a sealing material.
  • a liquid crystal layer 40 is formed between the active matrix substrate 10 and the counter substrate 20, but when a dropping method is used, a liquid crystal material is dropped before bonding the substrates, and a vacuum injection method is used. The liquid crystal material is injected after the substrates are bonded together.
  • a liquid crystal display panel is completed by affixing a polarizing plate, retardation film, etc. on the surface on the opposite side to the liquid crystal layer 40 side of each board
  • a gate driver, a source driver, a display control circuit, and the like are mounted on the liquid crystal display panel, and a liquid crystal display device corresponding to the application is completed by combining a backlight and the like.
  • the structure of the liquid crystal display panel according to the first embodiment is, for example, an optical microscope (manufactured by Olympus, semiconductor / FPD inspection microscope MX61L) and an energy dispersive X-ray spectroscope side-by-side scanning transmission electron microscope (STEM-EDX: Scanning Transmission). It can be confirmed and measured using an Electron Microscope Energy Dispersive X-ray Spectroscope, HD-2700 manufactured by Hitachi High-Technologies Corporation.
  • a neodymium Yag laser (Nd: YAG Laser: Nodymium Yttrium Aluminum Garnet Laser, HSL4000II manufactured by HOYA).
  • FIG. 8 and 9 are schematic cross-sectional views illustrating modifications of the liquid crystal display panel of Embodiment 1.
  • FIG. FIG. 8 shows the time of laser irradiation
  • FIG. 9 shows the state after laser irradiation.
  • the liquid crystal display panel according to the first embodiment there is an example in which not only the common electrode 15 but also the second insulating film 16 is provided with a through hole (through hole). Thereby, the through hole of the common electrode 15 and the through hole of the second insulating film 16 are integrally formed. Thus, even if the surface of the first insulating film 14 is exposed, the data signal line 13 pushed in by laser irradiation can be prevented from coming into contact with the common electrode 15 as shown in FIG. It is possible to prevent leakage between the data signal line 13 and the common electrode 15.
  • the difference between the case where the surface of the first insulating film 14 is exposed and the case where the surface is not exposed is that, as will be described later, when columnar spacers are used, misalignment is less likely to occur due to through-holes in the second insulating film.
  • Embodiment 2 shows an example of an FFS mode liquid crystal display panel.
  • the liquid crystal display panel of the second embodiment is the same as the liquid crystal display panel of the first embodiment except that the positions of through holes provided in the common electrode are different.
  • FIG. 10 is a schematic plan view of an active matrix substrate in the second embodiment. In FIG. 10, a region represented by “x” is a laser repair region.
  • two laser repair areas are prepared for the data signal line 13 having a length corresponding to one side of the pixel, as in the first embodiment.
  • the through holes 71 are formed above and below the TFT 53 when the active matrix substrate is viewed in plan.
  • the through hole 71 a above the TFT 53 is provided not in the vicinity of the TFT 53 but in a place away from the TFT 53. That is, the distance between the upper through hole 71 a and the TFT 53 is larger than the distance between the lower through hole 71 b and the TFT 53.
  • FIG. 11 is a schematic plan view showing the arrangement location of the black matrix in the second embodiment.
  • the black matrix 22 is provided so as to overlap the through hole 71 of the common electrode 15. Thereby, it is possible to prevent a decrease in contrast.
  • laser repair can be performed without reducing the aperture ratio by arranging the through hole 71a next to the wide portion. Liquid crystal panel can be obtained.
  • Embodiment 3 shows an example of an FFS mode liquid crystal display panel.
  • the liquid crystal display panel of the third embodiment is the same as the liquid crystal display panel of the first embodiment except that the sizes of the through holes provided in the common electrode are different.
  • FIG. 12 is a schematic plan view of an active matrix substrate in the third embodiment. In FIG. 12, a region represented by “x” is a laser repair region.
  • the through-hole 71 provided in the common electrode 15 is not formed in two places with the TFT 53 interposed therebetween, but only in one place, includes the TFT 53, and secures a laser repair region above and below the TFT 53, respectively. It is formed so as to cross the TFT 53 and the scanning signal line 51 so as to be able to.
  • the through hole 71 has a vertical width of 35 to 40 ⁇ m and a horizontal width of 7 to 13 ⁇ m.
  • the data signal line 13 has a line width of 3 to 7 ⁇ m. If a large through hole is provided in a form including the TFT 53 as described above, a plurality of laser repair regions can be secured so as to sandwich the TFT 53 by forming only one through hole. As a result, signal supply to the target TFT 53 can be stopped so that only defective pixels are not operated.
  • FIG. 13 is a schematic plan view showing the arrangement location of the black matrix in the third embodiment.
  • the black matrix 22 is provided so as to overlap the through hole 71 of the common electrode 15. Thereby, it is possible to prevent a decrease in contrast. Since light does not originally pass through the through-hole portion, according to the present embodiment, a repairable liquid crystal panel can be obtained without reducing the aperture ratio.
  • Embodiment 4 shows an example of an FFS mode liquid crystal display panel.
  • the liquid crystal display panel of the fourth embodiment is the same as the liquid crystal display panel of the first embodiment except that the configuration of the TFT is different.
  • FIG. 14 is a schematic plan view of an active matrix substrate in the fourth embodiment. In FIG. 14, a region represented by “x” is a laser repair region.
  • a part of the data signal line 13 is deformed to configure the source electrode 55 b of the TFT 53.
  • the source electrode 55b and the drain electrode 55c of the TFT 53 are not connected to the semiconductor layer 54 via the contact portion, but are in direct contact with the semiconductor layer 54. Even in such a configuration, the data signal is input in the order of the source electrode 55 b, the semiconductor layer 54, the drain electrode 55 c, the drain lead-out wiring 52, and the pixel electrode 17 through the data signal line 13. In addition, since it is not necessary to form the contact portion, a more efficient configuration can be obtained.
  • two laser repair areas are prepared for the data signal line 13 having a length corresponding to one side of the pixel, as in the first embodiment. Further, since the through holes 71 are formed above and below the TFT 53 when the active matrix substrate is viewed in plan, the function of the TFT 53 is stopped and only the defective pixel is not operated. Can be.
  • FIG. 15 is a schematic plan view showing a black matrix arrangement location in the fourth embodiment.
  • the black matrix 22 is formed so as to cover the scanning signal line 51, the data signal line 13, the TFT 53, the through hole 71 of the common electrode 15, and the outer edge (edge portion) of the pixel electrode 17. .
  • the black matrix 22 is formed so as to cover the scanning signal line 51, the data signal line 13, the TFT 53, the through hole 71 of the common electrode 15, and the outer edge (edge portion) of the pixel electrode 17. .
  • FIG. 16 is a schematic plan view showing a first modification of the liquid crystal display panel of Embodiment 4
  • FIG. 17 is a schematic plan view showing further the location of the black matrix. Since the first modification of the liquid crystal display panel of the fourth embodiment has a configuration according to the second embodiment, it has the same characteristics as described in the second embodiment.
  • FIG. 18 is a schematic plan view showing a second modification of the liquid crystal display panel of Embodiment 4
  • FIG. 19 is a schematic plan view further showing the location of the black matrix. Since the second modification of the liquid crystal display panel of the fourth embodiment has a configuration according to the third embodiment, it has the same characteristics as those described in the third embodiment.
  • Embodiment 5 shows an example of an FFS mode liquid crystal display panel.
  • the liquid crystal display panel of the fifth embodiment is the same as the liquid crystal display panel of the first embodiment except that the positions of the columnar spacers are limited.
  • FIG. 20 is a schematic plan view of an active matrix substrate in the fifth embodiment.
  • two laser repair areas are prepared for the data signal line 13 having a length corresponding to one side of the pixel. Further, the data signal line 13 at a position overlapping with the through hole 71 provided in the common electrode 15 is a portion that becomes a laser repair region, and is represented by “x” in FIG.
  • FIG. 21 is a schematic plan view showing the arrangement location of the black matrix in the fifth embodiment.
  • the spacer used in Embodiment 5 is a columnar spacer 31 made of an insulating material, and one spacer is formed for several pixels.
  • the columnar spacer 31 is disposed so as to overlap at least one of the through holes 71.
  • the columnar spacer 31 is disposed so as to overlap with the through hole 71 b below the TFT 53.
  • the black matrix 22 is formed so as to cover the scanning signal line 51, the data signal line 13, the TFT 53, the columnar spacer 31, and the through hole 71 of the common electrode 15.
  • 22 to 27 are schematic cross-sectional views taken along the line CD in FIG. 20, and show a plurality of examples (first to third examples) regarding the form of the columnar spacer.
  • 22 and 23 show a first example
  • FIGS. 24 and 25 show a second example
  • FIGS. 26 and 27 show a third example.
  • 22, 24, and 26 show the time of laser irradiation
  • FIGS. 23, 25, and 27 show the state after laser irradiation.
  • the columnar spacer is formed on the counter substrate 20 side. Further, the columnar spacer 31 is formed at a position overlapping with a region where the through hole of the common electrode 15 of the active matrix substrate 10 is formed.
  • the columnar spacer 31 is arranged so as to overlap the laser repair region (laser cut portion), and therefore, the degree of scattering of the data signal line 13 at the time of laser cutting is reduced by the pressure from the columnar spacer 31. This reduces the possibility that a fragment of the data signal line 13 or a burr at the edge portion penetrates the first insulating film 14 and comes into contact with the common electrode 15.
  • the diameter of the columnar spacer 31 is slightly larger than the diameter of the through hole integrally provided in the common electrode 15, the second insulating film 16, and the pixel electrode 17. Largely formed. Specifically, the diameter of the columnar spacer 31 is 9 to 25 ⁇ m.
  • a through hole is not provided in the second insulating film 16 in a region overlapping the columnar spacer 31, but in the second example, a through hole is formed in the second insulating film 16 in a region overlapping the columnar spacer 31. Is provided.
  • the diameter of the columnar spacer 31 is smaller than the diameter of the through hole provided integrally with the common electrode 15, the second insulating film 16, and the pixel electrode 17. Specifically, the diameter of the columnar spacer 31 is 5 to 13 ⁇ m. Therefore, the columnar spacer 31 is fitted into each of the through holes. According to such a configuration, the degree of scattering of the data signal line 13 at the time of laser cutting is reduced, and fitting displacement between the active matrix substrate 10 and the counter substrate 20 at the time of assembling the liquid crystal display panel hardly occurs. Become.
  • Embodiment 6 shows an example of an FFS mode liquid crystal display panel.
  • the liquid crystal display panel of the sixth embodiment is the same as the liquid crystal display panel of the first embodiment except that the number of through holes provided in the common electrode is different.
  • FIG. 28 is a schematic plan view of an active matrix substrate in the sixth embodiment.
  • FIG. 29 is a schematic plan view illustrating a black matrix arrangement location in the sixth embodiment.
  • a region represented by “x” is a laser repair region.
  • the number of through holes 71 for the data signal line 13 having a length corresponding to one side of the pixel is only one. That is, when laser repair is performed in the sixth embodiment, it is necessary to perform repair using a laser repair region adjacent to the adjacent pixel.
  • the black matrix 22 is formed so as to cover the scanning signal line 51, the data signal line 13, the TFT 53, the columnar spacer, and the through hole 71 of the common electrode 15.
  • Embodiment 7 shows an example of a CPA (Continuous Pinwheel Alignment) mode liquid crystal display panel.
  • FIG. 30 is a schematic perspective view illustrating a liquid crystal alignment state of the liquid crystal display panel according to the seventh embodiment.
  • the liquid crystal display panel of Embodiment 7 includes an active matrix substrate (first substrate) 10, a counter substrate (second substrate) 20, and a liquid crystal layer 40 sandwiched between the active matrix substrate 10 and the counter substrate 20.
  • the liquid crystal display panel of Embodiment 7 has a columnar (dotted when viewed in plan) projection 42 on the counter substrate 20. More specifically, the protrusion 42 is made of an insulating material and is formed on the surface of the common electrode on the liquid crystal layer 40 side.
  • a protrusion 42 is also referred to as a rivet.
  • a hole formed in the common electrode may be used instead.
  • the liquid crystal molecules 41 are aligned in a direction perpendicular to the substrate surface except for the rivets 42 or some of the liquid crystal molecules 41 close to the holes. ing.
  • a voltage is applied in the liquid crystal layer 40 in this state, they fall radially toward the rivet 42 or the hole, and as a result, excellent viewing angle characteristics are obtained.
  • a transparent resin such as a phenol novolac photosensitive resin is preferably used.
  • FIG. 31 is a schematic plan view showing an active matrix substrate in the seventh embodiment.
  • the active matrix substrate includes a TFT 53, a scanning signal line 51, a data signal line 13, a lower layer electrode 65, a pixel electrode 17, an insulating film that electrically isolates the various wirings or electrodes, and an alignment film.
  • the counter substrate includes a color filter, a black matrix, a common electrode, a dielectric protrusion, and an alignment film. The color filter and the black matrix may be provided not on the counter substrate side but on the active matrix substrate side.
  • the configurations of the TFT 53, the scanning signal line 51, and the data signal line 13 in the seventh embodiment are the same as those in the fourth embodiment.
  • a region represented by “x” is a laser repair region.
  • the pixel electrode 17 is disposed in each region surrounded by the data signal line 13 and the scanning signal line 51 and has a substantially rectangular shape.
  • the plurality of pixel electrodes 17 are arranged in a matrix.
  • Each pixel electrode 17 is formed with a slit 17a in the center, and is divided into an upper part and a lower part via a bridge part (bridge part).
  • bridge part By dividing the pixel electrode 17 into an upper part and a lower part, the pixel electrode 17 has a substantially square shape. Therefore, in the type of system in which the orientation is controlled radially around the rivet, a plurality of regions having different liquid crystal orientations are used. (Domain) can be balanced.
  • the slit 17 a is formed to extend in a direction parallel to the length direction of the scanning signal line 51.
  • the slit 17a is formed so as to overlap the bisector of the vertical side of the pixel electrode.
  • FIG. 32 is a schematic plan view mainly showing a lower layer electrode, a data signal line, and a drain lead-out line of the active matrix substrate in the seventh embodiment.
  • the material of the lower layer electrode 65 include transparent conductive materials such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and tin oxide (SnO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • ZnO zinc oxide
  • SnO tin oxide
  • a through hole of the lower layer electrode 65 is provided at a position overlapping the contact portion between the drain lead-out wiring and the pixel electrode.
  • the lower layer electrode 65 serves as a storage capacitor electrode. Since the transparent lower layer electrode 65 serves as a storage capacitor portion, the aperture ratio is not reduced by the storage capacitor portion, and a high aperture ratio can be maintained.
  • two laser repair areas are prepared for the data signal line 13 having a length corresponding to one side of the pixel.
  • the data signal line 13 in a position overlapping with the through hole 71 provided in the lower layer electrode 65 is a portion that becomes a laser repair region.
  • through holes 71a and 71b are provided in a part of the lower layer electrode 65, and two laser repair regions are provided so as to sandwich the TFT 53, thereby stopping the function of the target TFT 53. Therefore, it is possible not to operate only the pixel in which the defect occurs.
  • FIG. 33 is a schematic plan view showing a black matrix arrangement location in the seventh embodiment.
  • the black matrix 22 is formed so as to cover the scanning signal line 51, the data signal line 13, the TFT 53, and the through hole 71 of the lower layer electrode 65.
  • Embodiment 8 shows an example of a CPA mode liquid crystal display panel.
  • the liquid crystal display panel of the eighth embodiment is the same as the liquid crystal display panel of the seventh embodiment except that the positions of through holes provided in the lower layer electrodes are different.
  • FIG. 34 is a schematic plan view showing the liquid crystal display panel of the eighth embodiment
  • FIG. 35 is a schematic plan view showing further the location of the black matrix.
  • the through hole 71 provided in the lower layer electrode 65 is provided not at the vicinity of the TFT 53 but at a position away from the TFT 53 and is provided so as to overlap with a slit formed at the time of patterning the pixel electrode. ing.
  • the through hole 71 of the lower layer electrode 65 is formed so as to overlap with the slit 17 a provided in the center of the pixel electrode 17.
  • the through hole 71 provided in the lower layer electrode 65 and the slit 17a provided in the center of the pixel electrode 17 can be integrally formed.
  • the pixel electrode 17 is patterned to form sub-pixels. Therefore, it is easy to form notches (slits) in the pixel electrode 17 in the vicinity of the area corresponding to the data signal line, and the pixel electrode 17 is cut accordingly. It becomes easy to form a notch also in the lower layer electrode 65 in a position overlapping with the notch.
  • Such a notch in the lower layer electrode 65 can be used as it is as a through hole, so that an efficient configuration is obtained.
  • the number of through holes 71 for the data signal line 13 having a length corresponding to one side of the pixel is only one. That is, when laser repair is performed in the eighth embodiment, it is necessary to perform repair using a laser repair region adjacent to the adjacent pixel.
  • Embodiment 9 shows an example of a TN mode liquid crystal display panel.
  • FIG. 36 is a schematic perspective view illustrating a liquid crystal alignment state of the liquid crystal display panel according to the ninth embodiment.
  • the liquid crystal display panel of Embodiment 9 includes an active matrix substrate (first substrate) 10, a counter substrate (second substrate) 20, and a liquid crystal layer 40 sandwiched between the active matrix substrate 10 and the counter substrate 20.
  • the surfaces of the active matrix substrate 10 and the counter substrate 20 are each subjected to an alignment process, and the directions of the alignment processes are orthogonal to each other.
  • FIG. 10 shows an alignment process, and the directions of the alignment processes are orthogonal to each other.
  • the liquid crystal molecules 41 when no voltage is applied, the liquid crystal molecules 41 are oriented in the horizontal direction with respect to the substrate surface for those near the substrate surface, and from one substrate to the other substrate, It is twisted 90 ° in the in-plane direction. When a voltage is applied, the liquid crystal molecules 41 are uniformly tilted in the same direction, and the birefringence of light transmitted through the liquid crystal layer changes.
  • FIG. 37 is a schematic plan view showing an active matrix substrate in the ninth embodiment.
  • the active matrix substrate includes a TFT 53, a scanning signal line 51, a data signal line 13, a lower layer electrode 75, a pixel electrode 17, an insulating film that electrically isolates the various wirings or electrodes, and an alignment film.
  • the material of the lower layer electrode 75 include transparent conductive materials such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and tin oxide (SnO). Since the transparent lower layer electrode 75 serves as a storage capacitor portion, the aperture ratio is not reduced by the storage capacitor portion, and a high aperture ratio can be maintained.
  • the counter substrate includes a color filter, a black matrix, a common electrode, and an alignment film. The color filter and the black matrix may be provided not on the counter substrate side but on the active matrix substrate side. In FIG. 37, a region represented by “x” is a laser repair region.
  • the pixel electrode 17 is disposed in each region surrounded by the data signal line 13 and the scanning signal line 51 and has a substantially rectangular shape.
  • the plurality of pixel electrodes 17 are arranged in a matrix. In the eighth embodiment, no slit is formed in each pixel electrode 17.
  • FIG. 38 is a schematic plan view mainly showing the lower layer electrode, the data signal line, and the drain lead wiring of the active matrix substrate in the ninth embodiment.
  • the laser repair region is prepared between two pixels.
  • the data signal line 13 at a position overlapping the through hole 71 provided in the lower layer electrode 75 is a portion that becomes a laser repair region.
  • the data signal line 13 is partially branched and connected to the source electrode 55 b of the TFT 53.
  • the through hole 71 is provided so as to overlap with the branch portion of the data signal line 13.
  • a through hole 71 is provided in a branch portion where a signal is supplied to the TFT 53, and a portion overlapping the through hole is used as a laser repair region, so that the signal supply to the target TFT 53 is stopped and only defective pixels are detected. It can be prevented from operating. Further, in the present embodiment, since only one laser repair location is required per pixel, the number of steps in the laser repair process can be reduced.
  • FIG. 39 is a schematic plan view showing the arrangement location of the black matrix in the ninth embodiment.
  • the black matrix 22 is formed so as to cover the scanning signal line 51, the data signal line 13, the TFT 53, the columnar spacer 31, and the through hole 71 of the lower layer electrode 75.
  • the FFS mode liquid crystal display panel in the first to sixth embodiments the CPA mode liquid crystal display panel in the seventh and eighth embodiments, and the TN mode liquid crystal display panel in the ninth embodiment have been described. Modifications can be employed in appropriate combinations, and advantages based on the respective features can be obtained.
  • the liquid crystal display panels shown in Embodiments 1 to 9 are greatly improved in transmittance and power consumption compared with the liquid crystal display panel including the conventional active matrix substrate shown in FIG. Specifically, the liquid crystal display panels shown in Embodiments 1 to 9 have a transmittance improved by 15 to 35% and a power consumption reduced by 20 to 70% compared to the conventional liquid crystal display panel. Note that these specific numerical values vary depending on the panel size, resolution, or display mode.

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Abstract

La présente invention a pour objet de réaliser un substrat à matrice active caractérisé en ce qu'il est facile d'effectuer des réparations par laser pour corriger un défaut dans une ligne de signal de données où un court-circuit se produit, même s'il existe une autre électrode au-dessus de la ligne de signal de données. Le substrat à matrice active selon la présente invention comprend un substrat isolant (11), une ligne de signal de balayage, une ligne (13) de signal de données, un transistor à film mince relié à la ligne de signal de balayage et à la ligne (13) de signal de données, un premier film isolant (14) et une première électrode (15) recouvrant la ligne (13) de signal de données via le premier film isolant (14). La première électrode (15) est dotée d'un trou de traversée à une position de chevauchement par la ligne (13) de signal de données, ledit trou présentant un diamètre supérieur à la largeur de la ligne (13) de signal de données au niveau de la position de chevauchement.
PCT/JP2012/071817 2011-09-01 2012-08-29 Substrat à matrice active et écran d'affichage à cristaux liquides WO2013031823A1 (fr)

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US9177976B2 (en) 2013-11-15 2015-11-03 Chunghwa Picture Tubes, Ltd. TFT substrate and method of repairing the same
US10935858B2 (en) 2016-05-17 2021-03-02 Sharp Kabushiki Kaisha Liquid crystal display device

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US9177976B2 (en) 2013-11-15 2015-11-03 Chunghwa Picture Tubes, Ltd. TFT substrate and method of repairing the same
CN103616786A (zh) * 2013-12-10 2014-03-05 华映视讯（吴江）有限公司 薄膜晶体管基板及其修护方法
CN103616786B (zh) * 2013-12-10 2017-01-04 华映视讯（吴江）有限公司 薄膜晶体管基板及其修护方法
US10935858B2 (en) 2016-05-17 2021-03-02 Sharp Kabushiki Kaisha Liquid crystal display device

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