WO2013027470A1 - プラズマ処理装置、マイクロ波導入装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置、マイクロ波導入装置及びプラズマ処理方法 Download PDF

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Publication number
WO2013027470A1
WO2013027470A1 PCT/JP2012/064922 JP2012064922W WO2013027470A1 WO 2013027470 A1 WO2013027470 A1 WO 2013027470A1 JP 2012064922 W JP2012064922 W JP 2012064922W WO 2013027470 A1 WO2013027470 A1 WO 2013027470A1
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Prior art keywords
microwave
processing container
plasma
processing apparatus
plasma processing
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PCT/JP2012/064922
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English (en)
French (fr)
Japanese (ja)
Inventor
藤野　豊
篤 植田
成則 尾▲崎▼
北川　淳一
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東京エレクトロン株式会社
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Publication of WO2013027470A1 publication Critical patent/WO2013027470A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma

Definitions

  • the present invention relates to a plasma processing apparatus, a microwave introducing apparatus, and a plasma processing method for guiding a microwave of a predetermined frequency to a processing container and generating plasma to plasma process an object to be processed.
  • a microwave plasma processing apparatus that performs a predetermined plasma process on an object to be processed such as a semiconductor wafer.
  • a microwave plasma processing apparatus that generates plasma by introducing a microwave into a processing container is known.
  • this microwave plasma processing apparatus it is possible to generate high-density plasma in a processing container, and for example, oxidation processing, nitriding processing, deposition processing, etching processing, and the like are performed by the generated plasma.
  • a microwave introduction mechanism for introducing a microwave into the processing container is disposed on the upper part of the processing container.
  • a microwave transmission window larger than the diameter of the object to be processed is usually provided on the ceiling of the processing container.
  • the part is disposed to face the object to be processed.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2005-259633
  • a plurality of microwave introduction mechanisms are provided on the upper part of the processing container in order to obtain a large plasma discharge in the processing container by applying a large amount of power.
  • a microwave plasma processing apparatus has also been proposed.
  • the present invention provides a microwave plasma processing apparatus having a high degree of freedom in apparatus design, without providing a microwave introduction mechanism at the top of the processing vessel.
  • the plasma processing apparatus of the present invention comprises: A processing container for storing an object to be processed; A mounting section for mounting the object to be processed in the processing container; A gas supply mechanism for supplying a processing gas into the processing container; A microwave introduction device for generating a microwave for generating plasma of the processing gas in the processing container and for introducing the microwave into the processing container is provided.
  • the microwave introduction device includes: A dielectric window member disposed around the object to be processed and transmitting microwaves into the processing container; A conductor member for regulating the microwave radiated into the processing container through the dielectric window member so as to be directed to the target object in a direction parallel to the surface of the target object; A microwave radiation module.
  • the microwave introduction device generates a microwave and outputs a microwave
  • It may further include one or a plurality of antenna modules that are attached to the lower part of the processing container from the outside and supply the microwaves output from the microwave output unit to the microwave radiation module.
  • the dielectric window member may have a microwave radiation surface that is exposed to a space in the processing container and emits microwaves toward the object to be processed.
  • the conductor member may cover the surface of the dielectric window member excluding the microwave radiation surface.
  • the microwave radiation surface may have a shape corresponding to the shape of the edge of the object to be processed. For example, when the object to be processed is circular in plan view, the microwave radiation surface has an arc shape. It may have a curved shape.
  • the plasma processing apparatus of the present invention may have a plurality of the microwave radiation modules so as to surround the object to be processed.
  • one or a plurality of the antenna modules may be connected to one microwave radiation module.
  • the plasma processing apparatus of the present invention may have at least three antenna modules.
  • the lower end of the dielectric window member may be disposed at a height position equal to or higher than the height of the upper surface of the object to be processed placed on the placement portion.
  • a gas introduction part for introducing a processing gas supplied from the gas supply mechanism may be provided in a ceiling part of the processing container.
  • an exhaust port connected to an exhaust device for evacuating and exhausting the inside of the processing container may be provided in a ceiling portion of the processing container.
  • an exhaust port connected to an exhaust device for evacuating and exhausting the inside of the processing container may be provided in a side wall portion or a bottom wall portion of the processing container.
  • the placement section may be provided on the bottom wall portion of the processing container.
  • the plasma processing apparatus of the present invention may have a high frequency power supply unit that supplies high frequency power to the mounting unit.
  • the plasma processing apparatus of the present invention may have a DC voltage application unit to which a DC voltage is applied between the mounting unit and the microwave radiation module.
  • the plasma processing method of the present invention is to process an object to be processed by any of the above plasma processing apparatuses.
  • the microwave introducing apparatus of the present invention generates a microwave for generating plasma of a processing gas in a processing container that accommodates an object to be processed, and introduces the microwave into the processing container. It is.
  • This microwave introduction device A dielectric window member disposed around the object to be processed and transmitting microwaves into the processing container; A conductor member for regulating the microwave radiated into the processing container through the dielectric window member so as to be directed to the target object in a direction parallel to the surface of the target object; A microwave radiation module may be included.
  • the microwave introducing device of the present invention is A microwave output unit for generating and outputting a microwave;
  • One or a plurality of antenna modules that are attached to the lower part of the processing container from the outside and that supply the microwaves output from the microwave output unit to the microwave radiation module; May be further provided.
  • FIG. 1 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus according to the present embodiment.
  • FIG. 2 is an explanatory diagram illustrating a configuration of the control unit illustrated in FIG. 1.
  • the plasma processing apparatus 1 according to the present embodiment performs film formation processing and diffusion on a semiconductor wafer (hereinafter, simply referred to as “wafer”) W for manufacturing a semiconductor device, for example, with a plurality of continuous operations. It is an apparatus that performs predetermined processing such as processing, etching processing, and ashing processing.
  • the plasma processing apparatus 1 includes a processing container 2 that accommodates a wafer W that is an object to be processed, a placement unit 17 that places the wafer W inside the processing container 2, and a gas supply that supplies gas into the processing container 2.
  • a control unit 8 that controls each component of the plasma processing apparatus 1.
  • an external gas supply mechanism that is not included in the configuration of the plasma processing apparatus 1 may be used instead of the gas supply mechanism 3.
  • the processing container 2 has a substantially cylindrical shape, for example.
  • the processing container 2 is made of a metal material such as aluminum and an alloy thereof.
  • the surface of the processing container 2 may be subjected to, for example, alumite treatment (anodizing treatment).
  • the processing container 2 is grounded. Note that a sealing member is provided at a joint portion between the processing container 2 and each member attached to the processing container 2, and the airtightness in the processing container 2 is maintained.
  • the processing container 2 has a plate-like ceiling portion 11 and a bottom wall portion 13, and a side wall portion 12 that connects the ceiling portion 11 and the bottom wall portion 13.
  • the ceiling part 11 has a plurality of openings.
  • the ceiling portion 11 is provided with a plurality of exhaust ports 11a.
  • the ceiling portion 11 is provided with a plurality of gas introduction openings 11b.
  • a nozzle 16 described later is attached to each gas introduction opening 11b.
  • the side wall portion 12 has a loading / unloading port 12 a for loading / unloading the wafer W to / from a transfer chamber (not shown) adjacent to the processing container 2.
  • a gate valve G is disposed between the processing container 2 and a transfer chamber (not shown).
  • the gate valve G has a function of opening and closing the loading / unloading port 12a.
  • the gate valve G hermetically seals the processing container 2 in the closed state, and enables the transfer of the wafer W between the processing container 2 and a transfer chamber (not shown) in the open state.
  • a mounting portion 17 is provided on the bottom wall portion 13.
  • the placement portion 17 is formed with a thickness slightly larger than that of the bottom wall portion 13 by a member different from the bottom wall portion 13, and is fixed to the bottom wall portion 13.
  • the mounting portion 17 can be formed of, for example, a metal material such as aluminum and its alloy, ceramics, and the like, similar to the processing container 2.
  • the placement unit 17 is provided with a placement region 17a. This placement area 17a is for placing the wafer W, which is the object to be processed, horizontally.
  • the placement region 17 a is a recess formed on the inner wall surface of the placement portion 17 slightly larger than the size of the wafer W.
  • the placement region 17a is not limited to the concave portion, and may be provided in a convex portion or a table shape. Further, an electrode 26 is embedded in the mounting portion 17 in the vicinity of the mounting region 17a and immediately below it. The electrode 26 has the same size as the placement region 17 a and is entirely covered with an insulating coating material 27.
  • the bottom wall portion 13 has a plurality of openings 13b (only two are shown in FIG. 1).
  • a microwave introducing portion 63 (a part of the antenna module 61) of the microwave introducing device 5 described later is attached to each opening 13b from the outside of the processing container 2. That is, the microwave introduction device 5 is provided in the lower part of the processing container 2.
  • the microwave introduction device 5 functions as a plasma generation unit that introduces an electromagnetic wave (microwave) into the processing container 2 to generate plasma.
  • the configuration of the microwave introduction device 5 will be described in detail later.
  • the plasma processing apparatus 1 further includes a high-frequency bias power source 25 that supplies high-frequency power to the mounting unit 17 including the mounting region 17a, and a matching unit 24 provided between the mounting unit 17 and the high-frequency bias power source 25. It has.
  • the high-frequency bias power source 25 is electrically connected to an electrode 26 embedded immediately below the placement region 17 a of the placement unit 17.
  • the high frequency bias power supply 25 supplies high frequency power to the mounting unit 17 in order to attract ions to the wafer W.
  • the mounting portion 17 is formed of a conductive material, the electrode 26 is not provided, and an insulating material is interposed between the mounting portion 17 and the bottom wall portion 13, so that the mounting portion 17 and the high frequency bias power source are provided. 25 may be electrically connected to each other. Further, it is possible to adopt an apparatus configuration that does not use the high-frequency bias power supply 25 and the matching unit 24. In this case, the mounting portion 17 may be formed integrally with the bottom wall portion 13.
  • the plasma processing apparatus 1 further includes a temperature control mechanism that heats or cools the placement region 17a.
  • the temperature control mechanism controls the temperature of the wafer W within a range of 25 ° C. (room temperature) to 900 ° C.
  • the mounting region 17a is provided with a plurality of support pins 28 provided so as to be able to project and retract with respect to the upper surface (mounting surface) thereof.
  • the plurality of support pins 28 are configured to be displaced up and down by an arbitrary lifting mechanism so that the wafer W can be transferred to and from a transfer chamber (not shown) at the raised position.
  • the plasma processing apparatus 1 further includes a gas introduction part 15 provided in the ceiling part 11 of the processing container 2.
  • the gas introduction part 15 has a nozzle 16 having a cylindrical shape that is attached to a plurality of gas introduction openings 11 b of the ceiling part 11.
  • the nozzle 16 has a gas hole 16a formed on the lower surface thereof. The arrangement of the nozzles 16 will be described later.
  • the gas supply mechanism 3 includes a gas supply device 3 a including a gas supply source 31, and a pipe 32 that connects the gas supply source 31 and the gas introduction unit 15.
  • a gas supply device 3 a including a gas supply source 31, and a pipe 32 that connects the gas supply source 31 and the gas introduction unit 15.
  • one gas supply source 31 is illustrated, but the gas supply device 3 a may include a plurality of gas supply sources according to the type of gas used.
  • the gas supply source 31 is used as a gas supply source of, for example, a rare gas for plasma generation or a processing gas used for oxidation treatment, nitridation treatment, film formation treatment, etching treatment, and ashing treatment.
  • a rare gas for plasma generation for example, Ar, Kr, Xe, He, or the like is used as a rare gas for generating plasma.
  • an oxidizing gas such as oxygen gas, ozone, or NO 2 gas is used.
  • Nitriding gas, NH 3 gas, N 2 O gas, or the like is used as a processing gas used for the nitriding treatment.
  • the gas supply source 31 is used to clean the inside of the processing container 2, the film forming raw material gas, the purge gas used when replacing the atmosphere in the processing container 2, and the inside of the processing container 2. It is used as a supply source for cleaning gas and the like used in the process.
  • TiCl 4 gas and NH 3 gas are used as the film forming source gas.
  • the purge gas for example, N 2 , Ar, or the like is used.
  • ClF 3 , NF 3 or the like is used as the cleaning gas.
  • the etching gas CF 4 gas, HBr gas, or the like is used.
  • oxygen gas or the like is used.
  • the gas supply device 3a further includes a mass flow controller and an opening / closing valve provided in the middle of the pipe 32.
  • the types of gases supplied into the processing container 2 and the flow rates of these gases are controlled by a mass flow controller and an opening / closing valve.
  • the plasma processing apparatus 1 further includes an exhaust pipe 14 that connects the exhaust port 11 a and the exhaust apparatus 4.
  • the exhaust device 4 includes, for example, an APC valve and a high-speed vacuum pump that can depressurize the internal space of the processing container 2 to a predetermined vacuum level at high speed. Examples of such a high-speed vacuum pump include a turbo molecular pump. By operating the high-speed vacuum pump of the exhaust device 4, the internal space of the processing container 2 is depressurized to a predetermined degree of vacuum, for example, 0.133 Pa.
  • a plurality of exhaust ports 11a are connected to one exhaust device 4 via the exhaust pipe 14, but the exhaust devices 4 may be provided individually for each exhaust port 11a.
  • the control unit 8 is typically a computer.
  • the control unit 8 includes a process controller 91 including a CPU, and a user interface 92 and a storage unit 93 connected to the process controller 91.
  • the process controller 91 includes each component (for example, the high frequency bias power supply 25, the gas supply device, etc.) related to process conditions such as temperature, pressure, gas flow rate, high frequency power for bias application, and microwave output. 3a, the exhaust device 4, the microwave introduction device 5 and the like).
  • the user interface 92 has a keyboard and a touch panel on which a process manager manages command input to manage the plasma processing apparatus 1, a display that visualizes and displays the operating status of the plasma processing apparatus 1, and the like.
  • the storage unit 93 stores a control program (software) for realizing various processes executed by the plasma processing apparatus 1 under the control of the process controller 91, a recipe in which processing condition data, and the like are recorded. .
  • the process controller 91 calls and executes an arbitrary control program or recipe from the storage unit 93 as necessary, such as an instruction from the user interface 92. Thus, desired processing is performed in the processing container 2 of the plasma processing apparatus 1 under the control of the process controller 91.
  • control program and recipe described above can be stored in a computer-readable storage medium such as a CD-ROM, hard disk, flexible disk, flash memory, DVD, or Blu-ray disk. Also, the above recipe can be transmitted from other devices as needed via, for example, a dedicated line and used online.
  • FIG. 3 is an explanatory diagram showing configurations of the microwave output unit 50 and the antenna unit 60 in the microwave introduction device 5.
  • FIG. 4 is an enlarged cross-sectional view showing the microwave introduction part 63 and the microwave radiation module 80 attached to the processing container 2.
  • FIG. 5 is a plan view showing the planar antenna 71 in the microwave introduction unit 63 shown in FIG.
  • FIG. 6 is a plan view for explaining the arrangement of the microwave radiation module 80 in the processing container 2.
  • FIG. 7 is a main part perspective view for explaining the arrangement of one microwave radiation module 80 and the wafer W.
  • the microwave introduction device 5 is provided at the lower portion of the processing container 2 and functions as a plasma generating means for introducing an electromagnetic wave (microwave) into the processing container 2 to generate plasma. As shown in FIG. 1 and FIG. 3, the microwave introduction device 5 generates a microwave, distributes the microwave to a plurality of paths, and outputs the microwave, and the microwave output unit 50 An antenna unit 60 for introducing the output microwave into the processing container 2 and a microwave radiation module 80 for radiating the microwave introduced by the antenna unit 60 into the processing container 2 are provided.
  • the microwave output unit 50 distributes the microwave amplified by the power supply unit 51, the microwave oscillator 52, the amplifier 53 that amplifies the microwave oscillated by the microwave oscillator 52, and the microwave amplified by the amplifier 53 to a plurality of paths. And a distributor 54.
  • the microwave oscillator 52 oscillates microwaves (for example, PLL oscillation) at a predetermined frequency (for example, 2.45 GHz).
  • a predetermined frequency for example, 2.45 GHz.
  • the frequency of the microwave is not limited to 2.45 GHz, and may be 8.35 GHz, 5.8 GHz, 1.98 GHz, or the like.
  • such a microwave output part 50 can be applied also when the frequency of a microwave is made into the range of 800 MHz to 1 GHz, for example.
  • the distributor 54 distributes the microwave while matching the impedances of the input side and the output side.
  • the antenna unit 60 includes a plurality of antenna modules 61. Each of the plurality of antenna modules 61 introduces the microwave distributed by the distributor 54 into the processing container 2. Each antenna module 61 has an amplifier unit 62 that mainly amplifies and outputs the distributed microwave, and a microwave introduction unit 63 that introduces the microwave output from the amplifier unit 62 into the processing container 2. is doing.
  • the amplifier unit 62 includes a phase shifter 62A that changes the phase of the microwave, a variable gain amplifier 62B that adjusts the power level of the microwave input to the main amplifier 62C, a main amplifier 62C configured as a solid state amplifier, It includes an isolator 62D that separates reflected microwaves that are reflected by an antenna unit of a microwave introducing unit 63, which will be described later, and that travel toward the main amplifier 62C.
  • the phase shifter 62A is configured to change the microwave radiation characteristic by changing the phase of the microwave.
  • the phase shifter 62A is used to change the plasma distribution by controlling the directivity of the microwave by adjusting the phase of the microwave for each antenna module 61, for example. If such adjustment of the radiation characteristics is not performed, the phase shifter 62A may not be provided.
  • variable gain amplifier 62B is used for adjusting variations of individual antenna modules 61 and adjusting plasma intensity. For example, by changing the variable gain amplifier 62B for each antenna module 61, the plasma distribution in the entire processing container 2 can be adjusted.
  • the main amplifier 62C includes, for example, an input matching circuit, a semiconductor amplifying element, an output matching circuit, and a high Q resonance circuit.
  • the semiconductor amplifying element for example, GaAs HEMT, GaN HEMT, and LD (Laterally Diffused) -MOS capable of class E operation are used.
  • the isolator 62D has a circulator and a dummy load (coaxial terminator).
  • the circulator guides the reflected microwave reflected by the antenna section of the microwave introduction section 63 described later to the dummy load.
  • the dummy load converts the reflected microwave guided by the circulator into heat.
  • the microwave introduction unit 63 includes a tuner 64 that matches impedance, an antenna unit 65 that radiates the amplified microwave into the processing container 2, and a metal material.
  • a main body container 66 having a cylindrical shape extending in the direction, and an inner conductor 67 extending in the same direction as the main container container 66 extends in the main body container 66.
  • the main body container 66 and the inner conductor 67 constitute a coaxial tube.
  • the main body container 66 constitutes the outer conductor of this coaxial tube.
  • the inner conductor 67 has a rod shape or a cylindrical shape. A space between the inner peripheral surface of the main body container 66 and the outer peripheral surface of the inner conductor 67 forms a microwave transmission path 68.
  • the antenna module 61 further includes a power feeding conversion unit provided on the base end side (lower end side) of the main body container 66.
  • the power feeding conversion unit is connected to the main amplifier 62C via a coaxial cable.
  • the isolator 62D is provided in the middle of the coaxial cable.
  • the tuner 64 constitutes a slag tuner. Specifically, as shown in FIG. 4, the tuner 64 includes two slugs 74 ⁇ / b> A and 74 ⁇ / b> B disposed on the base end side (lower end side) of the antenna body 65 of the main body container 66, and 2 An actuator 75 for operating the two slugs 74A and 74B and a tuner controller 76 for controlling the actuator 75 are provided.
  • the slugs 74 ⁇ / b> A and 74 ⁇ / b> B have a plate shape and an annular shape, and are disposed between the inner peripheral surface of the main body container 66 and the outer peripheral surface of the inner conductor 67.
  • the slugs 74A and 74B are made of a dielectric material.
  • a dielectric material for forming the slags 74A and 74B for example, high-purity alumina having a relative dielectric constant of 10 can be used.
  • High-purity alumina usually has a relative dielectric constant larger than that of quartz (relative dielectric constant 3.88) or Teflon (registered trademark) (relative dielectric constant 2.03), which is used as a material for forming slag.
  • the thickness of 74A, 74B can be made small.
  • high-purity alumina has a feature that the dielectric loss tangent (tan ⁇ ) is smaller than that of quartz or Teflon (registered trademark), and the loss of microwaves can be reduced.
  • High-purity alumina further has a feature of low distortion and a feature of being resistant to heat.
  • the high-purity alumina is preferably an alumina sintered body having a purity of 99.9% or more. Further, single crystal alumina (sapphire) may be used as high purity alumina.
  • the tuner 64 moves the slugs 74A and 74B in the vertical direction by the actuator 75 based on a command from the tuner controller 76. Thereby, the tuner 64 adjusts the impedance. For example, the tuner controller 76 adjusts the positions of the slugs 74A and 74B so that the terminal impedance is 50 ⁇ .
  • the main amplifier 62C of the amplifier unit 62, the tuner 64 of the microwave introduction unit 63, and the planar antenna 71 are arranged close to each other.
  • the tuner 64 and the planar antenna 71 constitute a lumped constant circuit and function as a resonator.
  • the tuner 64 can be tuned with high accuracy including plasma, and the influence of reflection on the planar antenna 71 can be eliminated.
  • the tuner 64 can eliminate impedance mismatch up to the planar antenna 71 with high accuracy, and can substantially make the mismatched portion a plasma space. Thereby, the tuner 64 enables high-precision plasma control.
  • the antenna unit 65 is provided on the opposite side of the main body container 66 from the power conversion unit. As described above, the portion of the main body container 66 closer to the base end than the antenna portion 65 has an impedance adjustment range by the tuner 64.
  • the antenna unit 65 includes a planar antenna 71 connected to the upper end portion of the inner conductor 67 and a microwave slow wave material 72 disposed on the lower surface side of the planar antenna 71. .
  • the planar antenna 71 has a disc shape.
  • the planar antenna 71 has a slot 71 a formed so as to penetrate the planar antenna 71.
  • four slots 71a are provided, and each slot 71a has a circular arc shape of an equal size.
  • the number of slots 71a is not limited to four, but may be five or more, or may be one or more and three or less.
  • the microwave slow wave material 72 is formed of a material having a dielectric constant larger than that of a vacuum.
  • a material for forming the microwave slow wave material 72 for example, fluororesin such as quartz, ceramics, polytetrafluoroethylene resin, polyimide resin, or the like can be used. Microwaves have a longer wavelength in vacuum.
  • the microwave slow wave material 72 has a function of adjusting the plasma by shortening the wavelength of the microwave. Further, the phase of the microwave varies depending on the thickness of the microwave slow wave material 72. Therefore, by adjusting the phase of the microwave according to the thickness of the microwave slow wave material 72, the planar antenna 71 can be adjusted to be at the antinode position of the standing wave. Thereby, while being able to suppress the reflected wave in the planar antenna 71, the radiation energy of the microwave radiated
  • the microwave radiation module 80 includes a microwave transmission plate 81 as a dielectric window member and a cover member 82 as a conductor member.
  • the microwave radiation module 80 is disposed inside the processing container 2.
  • the lower end of the microwave radiation module 80 (that is, the lower surface of the microwave transmission plate 81) is provided so as to be substantially in contact with the upper surface of the planar antenna 71.
  • one microwave radiation module 80 is connected to one antenna module 61 and radiates the microwave introduced through the antenna module 61 toward the space in the processing container 2.
  • microwave radiation modules 80 in FIG. 6, reference numerals 80A1, 80A2, 80A3, and 80A4. Express).
  • the microwave radiation modules 80A1, 80A2, 80A3, and 80A4 are separated from each other and are equally arranged on the same circumference so as to surround the periphery of the wafer W.
  • the four microwave radiation modules 80A1, 80A2, 80A3 and 80A4 have the same configuration.
  • the position of the planar antenna 71 of the antenna module 61 connected to each of the microwave radiation modules 80A1, 80A2, 80A3, and 80A4 is indicated by a broken line, and the processing container 2 is not shown.
  • the microwave transmission plate 81 is disposed around the wafer W so as to surround the wafer W, and transmits the microwave introduced by the antenna module 61 and radiates it into the processing container 2.
  • the microwave transmission plate 81 is made of a dielectric material.
  • quartz or ceramics is used as a dielectric material for forming the microwave transmission plate 81.
  • the microwave transmission plate 81 is fixed to the bottom wall portion 13 of the processing container 2 by a cover member 82.
  • the cover member 82 regulates the direction of the microwave so that the microwave introduced into the processing container 2 through the microwave transmission plate 81 is directed to the wafer W along a plane parallel to the surface of the wafer W.
  • the cover member 82 is a member that determines the direction of the microwave that is transmitted through the microwave transmission plate 81 and introduced into the space in the processing container 2.
  • the cover member 82 is formed of a metal material such as aluminum and an alloy thereof.
  • the surface of the cover member 82 may be subjected to, for example, alumite treatment (anodization treatment). Further, a film such as silicon or Y 2 O 3 may be formed.
  • the cover member 82 is provided in close contact with the microwave transmission plate 81 so as to cover the microwave transmission plate 81.
  • the cover member 82 is fixed to the bottom wall portion 13 of the processing container 2 by an arbitrary fixing means such as a screw.
  • the microwave transmission plate 81 has a rectangular shape with a fan shape in plan view, and has a three-dimensional shape whose longitudinal section has a constant thickness.
  • the cover member 82 also has a fan shape in plan view corresponding to the microwave transmitting plate 81, and its longitudinal section in the short direction is L-shaped.
  • the shapes of the microwave transmission plate 81 and the cover member 82 are not limited to those shown in the drawings, and can be any shape according to the shape of the object to be processed.
  • the side surface on one side (inner peripheral side) of the microwave transmission plate 81 is not covered with the cover member 82 and is exposed to the internal space of the processing container 2.
  • the exposed surface of the microwave transmission plate 81 is a microwave radiation surface 81 a that radiates microwaves toward the wafer W placed on the placement region 17 a in the processing container 2.
  • the direction of the microwave in the surface wave mode radiated from the microwave radiation surface 81a is indicated by a thick arrow.
  • the microwave radiation surface 81a has a shape corresponding to the edge shape of the wafer W that is circular in plan view. That is, the microwave radiation surface 81 a is curved in an arc shape and has a curved surface corresponding to the edge shape of the wafer W.
  • the microwaves are efficiently directed from the microwave radiation surfaces 81a of the four microwave transmission plates 81 toward the center O of the wafer W. Can radiate.
  • the lower end of the microwave transmission plate 81 is disposed at a height position equal to or higher than the height of the upper surface of the wafer W placed on the placement region 17a.
  • the lower surface of the microwave transmission plate 81 coincides with a virtual plane obtained by enlarging the upper surface of the wafer W placed on the placement region 17a.
  • the upper surface of the wafer W, the inner surface S around the wafer W in the surface of the mounting portion 17 and the bottom wall portion 13, and the lower surface of the microwave transmission plate 81 are substantially the same. They are the same height and are formed on the same virtual plane.
  • the microwave transmission plate 81 By arranging the microwave transmission plate 81 at such a height, boundary conditions such as a step can be eliminated between the microwave radiation surface 81 a of the microwave transmission plate 81 and the wafer W. Accordingly, it is possible to efficiently guide the surface-wave mode microwave radiated from the microwave radiation surface 81 a toward the surface of the wafer W and generate plasma above the wafer W.
  • the plasma processing apparatus 1 is configured such that high-frequency power can be supplied from the high-frequency bias power source 25 to the placement unit 17 including the placement region 17a.
  • high-frequency power can be supplied from the high-frequency bias power source 25 to the placement unit 17 including the placement region 17a.
  • ions can be drawn into the wafer W, so that, for example, when the plasma processing apparatus 1 performs processing with strongly ionic plasma, the processing efficiency is improved. Can be improved.
  • the microwave radiated from the microwave radiation surface 81a of the microwave transmission plate 81 is exposed between the microwave transmission plate 81 and the wafer W as shown in FIG. It propagates in the surface wave mode on the metal surface (the inner surface S around the wafer W in the bottom wall portion 13).
  • the surface wave propagating on the metal surface is guided by a sheath (not shown) existing between the plasma and the metal surface. That is, the surface wave propagates between the low electron density layer having a low dielectric constant present in the sheath and the plasma.
  • the sprayed film can prevent the inner surface S from being scraped by microwaves and causing contamination.
  • a silicon annular member may be disposed on the inner surface S exposed between the microwave transmitting plate 81 and the wafer W to cover the inner surface S.
  • the microwave amplified by the main amplifier 62C passes between the inner peripheral surface of the main body container 66 and the outer peripheral surface of the inner conductor 67 (microwave transmission path 68). It passes through the planar antenna 71, passes through the microwave transmission plate 81 from the slot 71 a of the planar antenna 71, and is radiated to the internal space of the processing container 2. At this time, since the radiation direction of the microwave is regulated by the cover member 82, the microwave is radiated from the microwave radiation surface 81 a facing the space in the processing chamber 2 toward the wafer W. This microwave propagates in the direction of the wafer W as a surface wave on the inner surface S around the wafer W in the bottom wall portion 13.
  • the microwave radiation surface 81a has a curved surface corresponding to the edge shape of the wafer W that is circular in plan view, so that the microwave in the surface wave mode is directed to the center O of the wafer W. It is radiated efficiently toward.
  • emitted from microwave radiation module 80A1 typically was shown with the thick arrow.
  • the surface wave mode microwaves radiated from the microwave radiation modules 80A1, 80A2, 80A3, and 80A4 can be controlled in phase by the phase shifter 62A of the amplifier unit 62 to control mutual interference. it can.
  • a surface wave plasma is generated immediately above the wafer W by the microwaves thus radiated, and a predetermined plasma process is performed on the wafer W.
  • FIG. 8 is an explanatory diagram showing a first modification of the microwave introduction device 5 in the plasma processing apparatus 1 of the first embodiment.
  • FIG. 8 shows the arrangement of the microwave radiation module 80 and the wafer W in the processing container 2 as in FIG.
  • two antenna modules 61 are connected to one microwave radiation module 80. That is, in this modification, four microwave radiation modules 80 (represented by reference numerals 80B1, 80B2, 80B3, and 80B4 in FIG. 8) are provided around the wafer W so as to surround the wafer W.
  • Two antenna modules 61 are connected to each.
  • the position of the planar antenna 71 of the antenna module 61 is indicated by a broken line.
  • the number of antenna modules 61 connected to one microwave radiation module 80 may be three or more. Further, in FIG. 8, an equal number of antenna modules 61 are connected to the four microwave radiation modules 80 (80B1 to 80B4), but a different number of antenna modules 61 are connected to each microwave radiation module 80. You can also
  • FIG. 9 is explanatory drawing which shows the 2nd modification of the microwave introduction apparatus 5 in the plasma processing apparatus 1 of 1st Embodiment.
  • 6 and 8 show an example in which four microwave radiation modules 80 are provided around the wafer W in the processing container 2 so as to surround the wafer W. However, if the wafer W can be surrounded, microwaves can be provided.
  • the number of radiation modules 80 is arbitrary.
  • the number of the microwave radiation modules 80 may be single, two to three, or five or more.
  • FIG. 9 shows an example in which four antenna modules 61 are connected to a single microwave radiation module 80C.
  • the position of the planar antenna 71 of the antenna module 61 is indicated by a broken line.
  • the microwave transmission plate 81 and the cover member 82 constituting the microwave radiation module 80C are both a single member formed in an annular shape.
  • the four antenna modules 61 are evenly arranged around the wafer W.
  • the plasma processing apparatus 1 selects the configuration of the microwave introduction apparatus 5, particularly the combination of the arrangement of the microwave radiation module 80 and the antenna module 61, according to the purpose of processing. be able to. Thereby, local control of the plasma density in the processing container 2 can be easily performed.
  • the microwave introduction apparatus is arranged so that at least three antenna modules 61 are arranged around the wafer W. 5 is preferable. Further, as the number of antenna modules 61 increases, local control of plasma in the processing container 2 becomes easier.
  • microwave radiation modules 80 are arranged in a concentric manner around the wafer W that is circular in plan view.
  • the microwave radiation modules 80 can be arranged around the substrate so as to form a square as a whole.
  • FIG. 10 is a bottom view of the ceiling portion 11 of the plasma processing apparatus 1 of the present embodiment, and shows an arrangement example of the nozzles 16 and the exhaust ports 11a in the ceiling portion 11.
  • 12 nozzles 16 are arranged in a concentric manner on the inner side and 28 nozzles 16 on the outer side.
  • one exhaust port 11 a is formed in the central portion, and six exhaust ports 11 a are formed in an intermediate region between the central portion and the peripheral portion.
  • the nozzles 16 and the exhaust ports 11a are alternately arranged concentrically.
  • the arrangement and the number of the nozzles 16 and the exhaust ports 11a in the ceiling portion 11 are not limited to the configuration shown in FIG. 10, and various types such as alternately arranging the nozzles 16 and the exhaust ports 11a in a grid pattern, for example. Can be modified.
  • the surface of the wafer W (surface to be processed) is provided by providing both the nozzle 16 for introducing gas and the exhaust port 11a for exhausting close to each other in the ceiling portion 11 of the processing chamber 2.
  • the residence time of processing gas in the vicinity can be shortened. That is, the processing gas introduced into the processing container 2 from the nozzle 16 can be discharged from the exhaust port 11a (by the exhaust device 4) in a short time.
  • the gas residence time in the processing container 2 it becomes possible to improve the film quality in the film forming process.
  • the gas residence time is shortened so that the film can be introduced into the film due to oxygen released from the parts in the processing chamber 2. Oxygen contamination can be reduced.
  • the oxidation rate can be improved by shortening the gas residence time.
  • a command is input from the user interface 92 to the process controller 91 so as to perform plasma nitriding in the plasma processing apparatus 1.
  • the process controller 91 receives this command and reads a recipe stored in the storage unit 93 or a computer-readable storage medium.
  • each end device for example, the high-frequency bias power supply 25, the gas supply device 3a, the exhaust device 4, and the microwave introduction is introduced from the process controller 91 so that the plasma nitridation process is executed according to the conditions based on the recipe.
  • a control signal is sent to the apparatus 5 or the like.
  • the gate valve G is opened, and the wafer W is loaded into the processing container 2 through the gate valve G and the loading / unloading port 12a by a transfer device (not shown).
  • the wafer W is transferred to the plurality of support pins 28 and placed on the placement region 17 a of the placement unit 17.
  • the gate valve G is closed, and the inside of the processing container 2 is evacuated by the exhaust device 4.
  • the gas supply mechanism 3 introduces a rare gas and a nitrogen-containing gas at a predetermined flow rate into the processing container 2 through the gas introduction unit 15.
  • the internal space of the processing container 2 is adjusted to a predetermined pressure by adjusting the exhaust amount and the gas supply amount.
  • the microwave to be introduced into the processing container 2 is generated in the microwave output unit 50.
  • the microwaves are distributed to a plurality of systems (for example, 4 systems) by the distributor 54.
  • the plurality of microwaves output from the distributor 54 of the microwave output unit 50 are input to the plurality of antenna modules 61 of the antenna unit 60 and are introduced into the processing container 2 by each antenna module 61.
  • the microwave propagates through the amplifier unit 62 and the microwave introduction unit 63.
  • the microwave that has reached the antenna section 65 of the microwave introduction section 63 is directed by the cover member 82 of the microwave radiation module 80 through the slot 71 a of the planar antenna 71 and transmits through the microwave transmission plate 81.
  • the light is emitted from the microwave radiation surface 81 a toward the space above the wafer W in the processing chamber 2.
  • microwaves are individually introduced into the processing container 2 from the respective antenna modules 61.
  • the microwave distributed by the distributor 54 can be individually amplified by the amplifier unit 62, so that the power of the microwave introduced into the processing container 2 can be individually controlled. Therefore, the plasma density in the processing container 2 can be locally controlled.
  • the microwaves introduced into the processing container 2 from a plurality of parts around the wafer W form an electromagnetic field at a position immediately above the wafer W in the processing container 2, respectively.
  • the processing gas such as an inert gas or a nitrogen-containing gas introduced into the processing container 2 is turned into plasma.
  • the silicon surface of the wafer W is nitrided by the action of active species in the plasma, such as radicals or ions, to form a thin silicon nitride film SiN.
  • the oxidation treatment can be performed on the wafer W by using an oxygen-containing gas instead of the nitrogen-containing gas.
  • the film forming process can be performed on the wafer W by the plasma CVD method.
  • the microwave radiation module 80 of the microwave introducing device 5 is disposed around the wafer W that is the object to be processed, and the microwave is introduced from the periphery of the wafer W. To do.
  • the microwave introduction device 5 By arranging the microwave introduction device 5 at the lower portion of the processing container 2, it is no longer essential to provide a microwave introduction mechanism in the ceiling portion 11 of the processing container 2. Therefore, the ceiling portion 11 can be used for other mechanisms, and as illustrated in FIG. 10, gas can be introduced / exhausted from the ceiling portion 11 of the processing container 2, and freedom in designing the apparatus. It became possible to greatly improve the degree.
  • microwaves are introduced into the processing container 2 through the antenna module 61 and the microwave radiation module 80 mounted on the bottom wall portion 13 of the processing container 2. Is done.
  • the effects of such a configuration will be described below in comparison with a plasma processing apparatus of a comparative example.
  • a plasma processing apparatus that introduces microwaves from above the processing container is referred to as a plasma processing apparatus of a comparative example.
  • FIG. 11 is a cross-sectional view schematically showing a configuration of a plasma processing apparatus of a comparative example.
  • the plasma processing apparatus 501 of the comparative example includes a processing container 502, a mounting table 521, and a support member 522.
  • the plasma processing apparatus 501 includes a microwave introducing device 505 instead of the microwave introducing device 5 shown in FIG.
  • the microwave introduction device 505 is provided on the upper portion of the processing container 502.
  • the microwave introducing device 505 is a microwave introducing device having a known configuration including only one microwave transmitting plate 573 made of quartz, for example.
  • the processing gas cannot be introduced or exhausted from the upper part of the processing container 502.
  • the processing gas is introduced from the side of the processing container 502, or a shower plate (not shown) is interposed between the mounting table 521 and the microwave transmission plate 573. Limited to the method. Further, in many cases, the exhaust of gas is limited to a method performed from the bottom of the processing container 502.
  • the microwave transmission plate 573 since the microwave transmission plate 573 is present immediately above the mounting table 521, for example, the thin film attached to the microwave transmission plate 573 is peeled off while the plasma oxidation process and the plasma nitridation process are repeated, and the wafer is removed. It falls on W and becomes a particle generation source.
  • the microwave introduction apparatus 505 is provided on the upper part of the processing container 502, and since the processing container 502 includes the mounting table 521 on which the wafer W is mounted and the support member 522, The volume of the processing container 502 becomes large and it is difficult to reduce the size.
  • the microwave introduction mechanism is provided in the ceiling portion of the processing container 502, it is difficult to reduce the volume of the processing container, and other mechanisms are mounted on the ceiling. It was difficult to provide in the part. As a result, the degree of freedom in device design was greatly restricted. Further, in the plasma processing apparatus 501, it is necessary to provide a microwave transmission plate 573 that may be a particle generation source immediately above the mounting table 521, and thus it is difficult to take measures against particles. On the other hand, in the plasma processing apparatus 1 of the present embodiment, a microwave introduction mechanism is provided on the bottom wall portion 13 of the processing container 2, and microwaves for generating plasma in the processing container 2 are generated around the wafer W.
  • the plasma processing apparatus 1 can significantly reduce the volume of the processing vessel 2 as compared to the microwave plasma processing apparatus having a conventional configuration.
  • a gas introduction portion for introducing gas and an exhaust portion for exhausting gas are provided in the ceiling portion 11 of the processing vessel 2. Gas can be introduced and exhausted through the ceiling 11.
  • generation of particles due to the microwave transmission plate can be reduced.
  • the effects of the plasma processing apparatus 1 of the present embodiment will be described in more detail with reference to examples of arrangement of the gas introduction part and the exhaust part in the processing container 2.
  • the gas is introduced into the processing container 2 and exhausted through the ceiling portion 11.
  • the plasma processing apparatus of the present invention has a high degree of freedom in apparatus design, for example, more variations can be adopted for the configuration of the gas introduction part and the exhaust part.
  • 12A to 12C schematically show a modified plasma processing apparatus in which the gas introduction position and the exhaust position are different from the plasma processing apparatus 1 of FIG. 1, and the other configuration is the first plasma processing apparatus. Same as 1.
  • the gas introduction part 94 and the exhaust part 95 are used only in the meaning of symbolically indicating a rough place where they are disposed.
  • the specific arrangement of nozzles and exhaust ports can be made more complicated as illustrated in FIG. 10, for example.
  • FIG. 12A is a mode in which the gas introduction part 94 is provided in the ceiling part 11 of the processing container 2 and the exhaust part 95 is provided in the side wall part 12 of the processing container 2.
  • the processing gas is introduced from the ceiling portion 11 of the processing container 2, and the side wall portion 12 is introduced.
  • the flow of gas exhausted from the provided exhaust unit 95 can make it difficult for particles to adhere to the surface of the wafer W.
  • the probability that the particles fall onto the surface of the wafer W can be reduced because the exhaust portion 95 does not exist immediately above the wafer W.
  • FIG. 12B is a mode in which the gas introduction part 94 is provided in the side wall part 12 of the processing container 2 and the exhaust part 95 is provided in the ceiling part 11 of the processing container 2.
  • gas is exhausted from the ceiling part 11 of the processing container 2.
  • the degree of freedom of arrangement of the exhaust part 95 in the ceiling part 11 is high, for example, the position directly above the wafer W is removed and the exhaust port is opened. Can be provided. Thereby, contamination of the wafer W due to falling particles can be reduced.
  • FIG. 12C shows a mode in which the gas introduction part 94A is provided in the ceiling part 11 of the processing container 2, the gas introduction part 94B is provided in the side wall part 12 of the processing container 2, and the exhaust part 95 is provided in the bottom wall part 13 of the processing container 2.
  • a certain type of gas can be introduced from the gas introduction unit 94A, and a gas of the same type or a different type from the gas introduced from the gas introduction unit 94A can be introduced from the gas introduction unit 94B.
  • This modification is effective for a process using a plurality of gases simultaneously.
  • the probability that the particles fall onto the surface of the wafer W can be reduced because the exhaust portion 95 does not exist immediately above the wafer W.
  • gas can be introduced and exhausted from the ceiling portion 11 and the side wall portion 12 in various combinations. Is possible.
  • the modes of gas introduction / exhaustion listed in the third to fifth modifications of FIGS. 12A to 12C are merely examples, and combinations of these modifications are possible.
  • various mechanisms are provided on the ceiling portion 11 of the processing container 2 in addition to the gas introduction / exhaust mechanism. Can do.
  • various mechanisms such as a measuring instrument for monitoring the film thickness of the wafer W and a measuring instrument for monitoring the state of plasma in the processing container 2 can be provided on the ceiling portion 11.
  • FIG. 13 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus 1A in the present embodiment, and corresponds to FIG. 1 of the first embodiment.
  • FIG. 14 is an explanatory diagram showing configurations of the microwave output unit 50A and the antenna module 61 of the microwave introduction device 5A of the present embodiment, and is a diagram that substantially corresponds to FIG. 3 of the first embodiment.
  • a distributor 54 is provided in the microwave output unit 50 of the microwave introduction apparatus 5, and the microwaves are distributed to the plurality of antenna modules 61 and then the plurality of microwave radiation modules. 80 to supply.
  • a plurality of microwave introduction apparatuses 5A are provided, and microwaves are supplied from one antenna module 61 to one microwave radiation module 80.
  • Other configurations of the plasma processing apparatus 1A according to the present embodiment are the same as those of the plasma processing apparatus 1 according to the first embodiment, and therefore, in FIGS. 13 and 14, the configurations are the same as those in FIGS. Are denoted by the same reference numerals and description thereof is omitted.
  • the configuration of the amplifier section 62 of the antenna module 61 shown in FIG. 14 may be further simplified.
  • the microwave introduction device 5A is configured to supply microwaves from one microwave output unit 50A to one microwave radiation module 80 via one antenna module 61.
  • the microwave introduction device 5A is configured to supply microwaves from one microwave output unit 50A to one microwave radiation module 80 via one antenna module 61.
  • the plasma processing apparatus 1A of the present embodiment can be used, for example, when a plurality of objects to be processed are simultaneously processed in the same processing container.
  • the microwave radiation module 80 can be shared in the plurality of microwave introduction apparatuses 5A.
  • FIG. 15 is a cross-sectional view showing a schematic configuration of plasma processing apparatus 1B in the present embodiment, and corresponds to FIG. 1 of the first embodiment.
  • FIG. 16 is an enlarged cross-sectional view showing a main part including the microwave introduction part 63 and the microwave radiation module 80 of the plasma processing apparatus 1B of the present embodiment, which is substantially the same as FIG. 4 of the first embodiment. It is a corresponding figure.
  • a DC application unit 83 as a DC voltage application unit and a variable direct current electrically connected to the DC application unit 83 are provided on the bottom wall 13 around the mounting unit 17.
  • a power supply 85 the plasma processing apparatus 1B includes a processing container 2 that accommodates the wafer W, a placement unit 17 that places the wafer W inside the processing container 2, and a gas supply mechanism 3 that supplies gas into the processing container 2.
  • the DC application unit 83 is made of, for example, a conductive material such as metal, surrounds the mounting unit 17, and is provided, for example, in an annular shape so as to be interposed between the microwave radiation module 80 and the mounting unit 17. .
  • the DC application unit 83 is embedded in the bottom wall portion 13 so that the upper surface thereof is exposed in the processing container 2.
  • An insulating material 84 is provided between the bottom wall portion 13 and the DC application portion 83 to be insulated, and is in an electrically floating state with respect to the bottom wall portion 13 at the ground potential.
  • the variable DC power supply 85 is configured to be turned on / off by a switch unit (not shown), and applies a negative DC voltage to the DC application unit 83, for example.
  • the microwave from the microwave transmission plate 81 is easily propagated in the direction of the wafer W by applying a DC voltage from the variable DC power supply 85 to the DC applying unit 83.
  • the microwave radiated from the microwave radiation surface 81a of the microwave transmission plate 81 is a metal surface (bottom wall) exposed between the microwave transmission plate 81 and the wafer W as shown by a thick arrow in FIG.
  • the inner surface S ′ around the wafer W in the part 13 and the DC application part 83 propagates in the surface wave mode.
  • the surface wave propagating on the metal surface is guided by a sheath (not shown) existing between the plasma and the metal surface.
  • the surface wave propagates between the low electron density layer having a low dielectric constant present in the sheath and the plasma.
  • it is possible to increase the sheath thickness by providing a DC applying unit 83 around the placement region 17a and applying a negative voltage from the variable DC power supply 85, for example.
  • the sheath thickness By enlarging the sheath thickness, the surface wave can be efficiently guided to the vicinity of the wafer W along the sheath.
  • the DC application unit 83 and applying a DC voltage thereto the sheath thickness can be adjusted, and the propagation efficiency of the microwave in the surface wave mode can be increased.
  • FIG. 17 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus 1C according to the present embodiment, and corresponds to FIG. 1 of the first embodiment.
  • the whole microwave radiation module 80 is configured to be accommodated in the processing container 2, but in the present embodiment, most of the microwave radiation module 80 is processed.
  • the container 2 is mounted on the outside of the container 2. That is, the plasma processing apparatus 1 ⁇ / b> C includes a processing container 2 that accommodates the wafer W, a placement unit 17 that places the wafer W inside the processing container 2, and a gas supply mechanism 3 that supplies gas into the processing container 2.
  • the microwave radiation module 80 of the microwave introduction device 5 is attached to the lower end of the side wall portion 12 from the outside. More specifically, as shown in FIG. 17, in the plasma processing apparatus 1 ⁇ / b> C, the cover member 82 of the microwave radiation module 80 is in contact with the lower end of the side wall portion 12, and the main body container 66 of the microwave introduction portion 63 of the antenna module 61.
  • the microwave introduction device 5 is disposed so that the side wall is in contact with the side end of the bottom wall portion 13.
  • the outer peripheral side of the cover member 82 of the microwave radiation module 80 is exposed to the external space of the processing container 2.
  • a sealing member (not shown) is provided at the contact portion between the upper surface of the cover member 82 of the microwave radiation module 80 and the lower end of the side wall portion 12 to maintain airtightness. Further, a sealing member (not shown) is also provided at the abutting portion between the main body container 66 of the microwave introduction portion 63 and the side end of the bottom wall portion 13 to maintain airtightness.
  • the microwave radiation surface 81a of the microwave transmission plate 81 exposed to the space in the processing container 2 and the inner peripheral surface of the cover member 82 are continuous with the inner peripheral surface of the side wall portion 12 of the processing container 2 without a step. It is the same.
  • the inner diameter of the processing chamber 2 (the distance between the side wall portions 12 facing each other) matches the distance between the microwave radiation surfaces 81a facing each other with the wafer W interposed therebetween.
  • the positions of the microwave radiation surface 81a of the microwave transmission plate 81 and the inner peripheral surface of the cover member 82 may not necessarily coincide with the position of the inner peripheral surface of the side wall portion 12 of the processing container 2 in the horizontal direction. Good. Since other configurations in the plasma processing apparatus 1C of the present embodiment are the same as those of the plasma processing apparatus 1 according to the first embodiment, the same reference numerals are given to the same configurations in FIG. 17 as in FIG. The description is omitted.
  • the diameter of the processing container can be significantly reduced as compared with the plasma processing apparatus 501 of the comparative example shown in FIG.
  • a microwave is introduced from the microwave transmission plate 573 of the microwave introduction apparatus 505 provided on the upper part of the processing container 502, and plasma P is generated inside the processing container 502.
  • the plasma density in the processing container 502 becomes substantially zero on the inner surface of the side wall portion 512.
  • the microwave radiation module 80 is provided around the wafer W, and the microwave is introduced from the position close to the edge of the wafer W toward the wafer W in the horizontal direction. Then, plasma is generated immediately above the wafer W. For this reason, even if the position of the side wall portion 12 of the processing container 2 is close to the edge of the wafer W, there is almost no fear of adversely affecting the uniformity of processing within the wafer W surface. Therefore, in the plasma processing apparatus 1C of the present embodiment, the inner diameter of the processing container 2 may be smaller than that of the plasma processing apparatus 501 of the comparative example, and the internal volume can be greatly reduced. Therefore, the processing container 2 can be downsized.
  • the internal volume of the processing container 2 can be reduced as compared with the plasma processing apparatus 501 of the comparative example, the residence time of the processing gas in the processing container 2 can be shortened. For example, when used as a film forming apparatus, an improvement in film quality can be expected.
  • the plasma processing apparatus 1C of the present embodiment since most of the microwave radiation module 80 is placed outside the processing container 2, for example, the plasma processing apparatuses 1 and 1 of the first to third embodiments are used. Compared with 1A and 1B, the volume of the internal space of the processing container 2 can be further reduced.
  • the configuration in which the microwave radiation module 80 is attached to the lower end of the side wall portion 12 is the same as that of the plasma processing apparatus 1A of the second embodiment (see FIG. 13) or the third embodiment.
  • the present invention can also be applied to the plasma processing apparatus 1B (see FIG. 15).
  • the plasma processing apparatus of the present invention is not limited to a case where a semiconductor wafer is used as an object to be processed, and can also be applied to a plasma processing apparatus using, for example, a solar cell panel substrate or a flat panel display substrate as an object to be processed.
  • the mounting portion 17 is provided on the bottom wall portion 13 of the processing container 2, but a metal stage or base is provided in the processing container 2, and the stage or base is provided.
  • a microwave may be radiated from a microwave radiation module arranged with its height aligned around the wafer W placed on the part.
  • the microwave introduction mechanism is not provided in the ceiling portion 11 of the processing container 2.
  • it does not preclude providing a microwave introduction mechanism on the ceiling portion 11 of the processing container 2 as an auxiliary.

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CN112509900A (zh) * 2019-09-13 2021-03-16 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6356415B2 (ja) * 2013-12-16 2018-07-11 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
KR102619949B1 (ko) 2016-05-16 2024-01-03 삼성전자주식회사 안테나, 그를 포함하는 마이크로파 플라즈마 소스, 플라즈마 처리 장치
US10707058B2 (en) * 2017-04-11 2020-07-07 Applied Materials, Inc. Symmetric and irregular shaped plasmas using modular microwave sources
JP6914149B2 (ja) * 2017-09-07 2021-08-04 東京エレクトロン株式会社 プラズマ処理装置
US11183369B2 (en) * 2018-12-27 2021-11-23 Industrial Technology Research Institute Focalized microwave plasma reactor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11162956A (ja) * 1997-11-25 1999-06-18 Hitachi Ltd プラズマ処理装置
JP2000174009A (ja) * 1998-12-02 2000-06-23 Hitachi Ltd プラズマ処理装置及び半導体製造装置並びに液晶製造装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11162956A (ja) * 1997-11-25 1999-06-18 Hitachi Ltd プラズマ処理装置
JP2000174009A (ja) * 1998-12-02 2000-06-23 Hitachi Ltd プラズマ処理装置及び半導体製造装置並びに液晶製造装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106783498A (zh) * 2015-11-20 2017-05-31 塔工程有限公司 基板处理设备的天线布置结构以及基板处理设备
CN106783498B (zh) * 2015-11-20 2019-07-05 塔工程有限公司 基板处理设备的天线布置结构以及基板处理设备
CN112466736A (zh) * 2019-09-09 2021-03-09 东京毅力科创株式会社 等离子体处理装置和温度控制方法
CN112509900A (zh) * 2019-09-13 2021-03-16 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN112509900B (zh) * 2019-09-13 2024-05-31 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法

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