WO2013021946A1 - 化合物半導体研磨用組成物 - Google Patents
化合物半導体研磨用組成物 Download PDFInfo
- Publication number
- WO2013021946A1 WO2013021946A1 PCT/JP2012/069856 JP2012069856W WO2013021946A1 WO 2013021946 A1 WO2013021946 A1 WO 2013021946A1 JP 2012069856 W JP2012069856 W JP 2012069856W WO 2013021946 A1 WO2013021946 A1 WO 2013021946A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- composition
- polishing composition
- compound semiconductor
- oxide
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 134
- 239000000203 mixture Substances 0.000 title claims abstract description 108
- 239000004065 semiconductor Substances 0.000 title claims description 47
- 150000001875 compounds Chemical class 0.000 title claims description 42
- 239000007800 oxidant agent Substances 0.000 claims abstract description 33
- 239000006061 abrasive grain Substances 0.000 claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims abstract description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 8
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 6
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims abstract description 5
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 5
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 5
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims abstract description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 9
- 230000033116 oxidation-reduction process Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 abstract description 12
- 230000001590 oxidative effect Effects 0.000 abstract description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 239000008119 colloidal silica Substances 0.000 description 7
- 239000011163 secondary particle Substances 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- -1 hydrogen peroxide Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000002421 anti-septic effect Effects 0.000 description 1
- 229940121375 antifungal agent Drugs 0.000 description 1
- 239000003429 antifungal agent Substances 0.000 description 1
- 229940064004 antiseptic throat preparations Drugs 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 125000005385 peroxodisulfate group Chemical group 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Definitions
- the present invention relates to a polishing composition used for polishing a polishing object made of a compound semiconductor material.
- compound semiconductors have been widely used as materials for producing power devices and high-brightness LEDs.
- surface polishing of the compound semiconductor is performed.
- compound semiconductors are generally very chemically stable and low in reactivity, and those with very high hardness are not easily processed by polishing. Therefore, the compound semiconductor is usually finished by lapping with diamond and polishing the scratches caused by lapping with colloidal silica.
- a silicon carbide substrate is polished using a polishing composition having a specific pH containing colloidal silica (see, for example, Patent Document 1), or a polishing composition having a specific pH containing amorphous silica and an acid.
- a method of polishing a gallium nitride substrate using an object is also known.
- a sufficient polishing rate removal rate
- it takes time to obtain a highly smooth surface and productivity is low.
- an object of the present invention is to provide a polishing composition capable of polishing a compound semiconductor at a high polishing rate.
- a polishing composition for use in polishing a compound semiconductor, which has abrasive grains and an oxidation-reduction potential at a pH at which polishing is performed.
- a polishing composition containing at least an oxidizing agent having a voltage of 8 V or more and water is provided.
- the abrasive is preferably at least one of silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, manganese oxide, silicon carbide and silicon nitride.
- the oxidizing agent is preferably at least one of sodium persulfate, potassium persulfate, and ammonium persulfate.
- the oxidizing agent may be a hydroxy radical.
- the polishing composition has a pH of 3 or less.
- a method for preparing the polishing composition of the above aspect comprising a first composition comprising abrasive grains and water, an oxidizing agent having a redox potential of 1.8 V or more, and water.
- a method comprising the steps of: preparing a second composition comprising: and mixing the first composition and the second composition to prepare a polishing composition.
- a polishing composition capable of polishing a compound semiconductor at a high polishing rate.
- the reason why such an effect can be obtained by the present invention is not clear, but it is thought that the breakdown of chemical bonds is specifically promoted on the surface of the compound semiconductor by the action of the oxidizing agent contained in the polishing composition. .
- the polishing composition of this embodiment contains at least abrasive grains, an oxidizing agent, and water.
- This polishing composition is an object for polishing a compound semiconductor material, that is, an application for polishing a compound semiconductor, more specifically, an application for polishing such an object to be polished to produce a compound semiconductor, more precisely, a semiconductor device. Used in.
- the polishing composition of the present embodiment has a hard Vickers hardness of 1,500 Hv or more.
- a compound semiconductor specifically, a carbide semiconductor such as silicon carbide (SiC), or a nitride semiconductor such as gallium nitride (GaN) or aluminum nitride (AlN) is used for polishing.
- the compound semiconductor may be a mixed crystal, that is, a composite compound.
- a compound semiconductor containing silicon and carbon or a compound semiconductor containing gallium and nitrogen is preferable as an object to be polished, and SiC or GaN is particularly preferable.
- the oxidizing agent contained in the polishing composition of the present embodiment acts on the surface of the compound semiconductor and plays a role of breaking or breaking the chemical bond on the surface.
- various oxidizing agents such as persulfate, perchlorate, periodate, and permanganate are generally known.
- the oxidizing agent used in the product is 1.8 V or more, preferably 2. at the pH at which polishing is performed, in other words, at the same pH as the polishing composition, more precisely at the same pH as the polishing composition during polishing. It has an oxidation-reduction potential of 0 V or higher.
- An oxidizing agent having an oxidation-reduction potential of 1.8 V or more has a sufficient effect of breaking chemical bonds on the surface of the compound semiconductor, and thus enables efficient polishing of the compound semiconductor by the polishing composition.
- examples of the oxidizing agent having a redox potential of 1.8 V or more include persulfate.
- the oxidation-reduction potential of the oxidant is the value of the standard oxidation-reduction potential of the oxidant measured on the basis of a standard hydrogen electrode (NHE), together with the pH value of the polishing composition, if necessary. And can be calculated by the Nernst equation.
- preferred oxidizing agents are sodium persulfate, potassium persulfate, and ammonium persulfate.
- the persulfate is also referred to as peroxosulfate, but the oxidizing agent used may be either peroxomonosulfate or peroxodisulfate, or may contain both. Since persulfate has a redox potential sufficient to break the chemical bond on the surface of the compound semiconductor, by using the persulfate as an oxidizing agent, the compound semiconductor can be formed using a polishing composition. A suitable polishing rate can be obtained when polishing.
- the polishing composition may contain a substance capable of generating hydroxy radicals instead of the oxidizing agent.
- the substance that plays a role as an oxidizing agent in the polishing composition may be a hydroxyl radical instead of a persulfate.
- An example of a substance capable of generating a hydroxy radical is hydrogen peroxide. Hydrogen peroxide generates hydroxy radicals by catalytic action of metals that can take a plurality of valences, such as Cr, Cu, Fe, Mn, Ni, Ti, V, and organic substances. Since the hydroxy radical has a redox potential sufficient to break the chemical bond on the surface of the compound semiconductor, the compound semiconductor can be formed using a polishing composition even when the hydroxy radical serves as an oxidizing agent. A suitable polishing rate can be obtained when polishing.
- the polishing composition contains any one of sodium persulfate, potassium persulfate and ammonium persulfate as an oxidizing agent. It is preferable to include.
- content of the oxidizing agent in polishing composition is 0.05 mass% or more, More preferably, it is 0.2 mass% or more. Moreover, it is preferable that content of the oxidizing agent in polishing composition is 20 mass% or less, More preferably, it is 5 mass% or less. When the content of the oxidizing agent is appropriate, the polishing rate of the object to be polished (compound semiconductor) by the polishing composition is more preferably improved.
- the abrasive grains contained in the polishing composition are preferably silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, manganese oxide, silicon carbide, or silicon nitride.
- silicon oxide, particularly colloidal silica or fumed silica is more preferable, and colloidal silica is more preferable.
- Surface-modified abrasive grains may be used. Specifically, the surface modification of the abrasive grains is performed by attaching or bonding a substance having a potential different from that of the abrasive grain surface to the abrasive grain surface and changing the potential of the abrasive grain surface.
- a substance having a potential different from that of the abrasive grain surface to the abrasive grain surface and changing the potential of the abrasive grain surface.
- the material used to change the potential of the abrasive grain surface are silicon oxide, surfactants, inorganic acids, organic acids, aluminum oxide, etc. Metal oxides can be used.
- the average secondary particle diameter (volume average diameter D50) of the abrasive grains contained in the polishing composition is preferably 0.005 ⁇ m or more, more preferably 0.02 ⁇ m or more. As the average secondary particle diameter of the abrasive grains increases, the polishing rate of the object to be polished by the polishing composition improves.
- the average secondary particle diameter of the abrasive grains contained in the polishing composition is preferably 5 ⁇ m or less, more preferably 0.2 ⁇ m or less. As the average secondary particle diameter of the abrasive grains decreases, it is easy to obtain a surface with low defects and low roughness on the object to be polished after polishing with the polishing composition.
- the average secondary particle size of the abrasive grains can be measured using a known measuring device such as a laser diffraction / scattering particle size distribution measuring device or a dynamic light scattering particle size analyzer.
- the content of abrasive grains in the polishing composition is preferably 0.1% by mass or more, more preferably 1% by mass or more. As the abrasive content increases, the polishing rate of the object to be polished by the polishing composition is improved.
- the content of abrasive grains in the polishing composition is preferably 50% by mass or less, more preferably 40% by mass or less. As the abrasive content decreases, the manufacturing cost of the polishing composition decreases, and it is easy to obtain a surface with little scratches on the object to be polished after polishing with the polishing composition.
- the pH of the polishing composition is preferably 3 or less, more preferably 1.5 or less.
- the pH of the polishing composition can be adjusted using various acids, bases, or salts thereof.
- organic acids such as carboxylic acid, organic phosphonic acid and organic sulfonic acid
- inorganic acids such as phosphoric acid, phosphorous acid, sulfuric acid, nitric acid, hydrochloric acid, boric acid and carbonic acid, amines and quaternary ammonium hydroxide, etc.
- Organic bases, alkali metal hydroxides, alkaline earth metal hydroxides, inorganic bases such as ammonia, or salts of these acids and bases are preferably used.
- the polishing composition of this embodiment contains an oxidizing agent having an oxidation-reduction potential of 1.8 V or higher at the pH at which polishing is performed. Therefore, according to the polishing composition of the present embodiment, even a hard compound semiconductor having a Vickers hardness of 1,500 Hv or higher can be polished at a high polishing rate.
- the embodiment may be modified as follows.
- the polishing composition of the above embodiment may contain two or more kinds of abrasive grains among silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, manganese oxide, silicon carbide, and silicon nitride. Also, two or more kinds of surface-modified abrasive grains may be included.
- the polishing composition of the above embodiment may contain an additive having an action of further increasing the polishing rate, such as a complexing agent and an etching agent, as necessary.
- the polishing composition of the above embodiment may further contain known additives such as antiseptics, antifungal agents, and rust inhibitors as necessary.
- the polishing composition of the embodiment further contains an additive such as a dispersant that improves the dispersibility of the abrasive grains and a dispersion aid that facilitates redispersion of the aggregated abrasive grains as necessary. May be.
- an additive such as a dispersant that improves the dispersibility of the abrasive grains and a dispersion aid that facilitates redispersion of the aggregated abrasive grains as necessary. May be.
- the polishing composition of the above embodiment may be a one-part type, or a two-part type comprising a plurality of agents each containing a part or all of the components in the polishing composition in an arbitrary ratio. Or a multi-drug type. Specifically, a first composition containing abrasive grains and water and a second composition containing an oxidant and water are prepared, and the first composition and the second composition are mixed to polish the composition. You may make it adjust a thing. When the polishing composition further contains a pH adjusting agent, the pH adjusting agent may be contained only in one of the first composition and the second composition, or the first composition and the second composition. It may be included in both. In the case of a two-component polishing composition, the first composition and the second composition are supplied to the polishing apparatus from different paths, and the first composition and the second composition are mixed on the polishing apparatus. You may do it.
- the polishing composition of the above embodiment may be prepared by diluting a stock solution of the polishing composition with water.
- dilution may be performed before mixing the first composition and the second composition, or may be performed after mixing.
- any one of the first composition and the second composition may be diluted with water and then mixed with the other. Or you may dilute with water simultaneously with mixing of a 1st composition and a 2nd composition.
- the polishing composition used for polishing the object to be polished may be recovered and reused (circulated). In this case, since it is less necessary to treat the used polishing composition as a waste liquid, it is possible to reduce the environmental burden and the cost.
- Example 1 to 11 and Comparative Examples 1 to 4 Polishing compositions of Examples 1 to 11 and Comparative Examples 1 to 4 were prepared by adding an oxidizing agent to colloidal silica, diluting with water, and adding a pH adjuster as necessary.
- the colloidal silica used had an average secondary particle diameter (volume average diameter D50) of 0.08 ⁇ m as measured using a laser diffraction / scattering particle size distribution analyzer “LA-950” manufactured by Horiba. .
- Nitric acid was used as a pH adjuster.
- substrate as a compound semiconductor was grind
- the colloidal silica in each polishing composition that is, the average secondary particle size and content of abrasive grains, the pH of each polishing composition, the type of oxidant contained in each polishing composition and its content As shown in FIG.
- the polishing rate obtained by measuring the weight of the gallium nitride substrate before and after polishing using each polishing composition and calculating from the difference in weight before and after polishing is shown in the “Polishing rate” column of Table 2.
- a polishing object made of a compound semiconductor can be polished at a high polishing rate, and productivity can be improved by increasing the efficiency of the polishing operation.
Abstract
Description
コロイダルシリカに酸化剤を添加し水で希釈し、さらに必要に応じてpH調整剤を加えることにより、実施例1~11及び比較例1~4の研磨用組成物を調製した。使用したコロイダルシリカは、堀場製作所社製のレーザ回折/散乱式粒子径分布測定装置“LA-950”を用いて測定される平均2次粒子径(体積平均径D50)が0.08μmであった。pH調整剤としては硝酸を使用した。そして、各例の研磨用組成物を用いて表1に示す条件で化合物半導体としての窒化ガリウム基板のGa面を研磨した。使用した窒化ガリウム基板はいずれも、直径2インチの円形である。
Claims (8)
- 化合物半導体を研磨する用途で使用される研磨用組成物であって、砥粒と、研磨を実施するpHにおける酸化還元電位が1.8V以上である酸化剤と、水とを少なくとも含むことを特徴とする研磨用組成物。
- 前記酸化剤が過硫酸ナトリウム、過硫酸カリウム及び過硫酸アンモニウムからなる群より選ばれる少なくとも一種である請求項1に記載の研磨用組成物。
- 前記酸化剤がヒドロキシラジカルである請求項1に記載の研磨用組成物。
- 前記研磨用組成物のpHが3以下である請求項1~3のいずれか1項に記載の研磨用組成物。
- 前記砥粒が酸化ケイ素、酸化アルミニウム、酸化セリウム、酸化ジルコニウム、酸化チタン、酸化マンガン、炭化ケイ素及び窒化ケイ素からなる群より選ばれる少なくとも一種である請求項1~4のいずれか1項に記載の研磨用組成物。
- 請求項1~5のいずれか1項に記載の研磨用組成物を調製する方法であって、
砥粒と水とを含む第1組成物と、酸化還元電位が1.8V以上である酸化剤と水とを含む第2組成物を準備する工程、及び
第1組成物と第2組成物とを混合して研磨用組成物を調製する工程
を含む方法。 - 請求項1~5のいずれか1項に記載の研磨用組成物を用いて、化合物半導体を研磨する方法。
- 請求項7に記載の方法を用いて化合物半導体を研磨する工程を含む、化合物半導体の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/237,262 US20140248776A1 (en) | 2011-08-09 | 2012-08-03 | Composition for polishing compound semiconductor |
EP12822290.8A EP2743968A4 (en) | 2011-08-09 | 2012-08-03 | COMPOSITION FOR POLISHING OF CONNECTED SEMICONDUCTORS |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-174372 | 2011-08-09 | ||
JP2011174372 | 2011-08-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013021946A1 true WO2013021946A1 (ja) | 2013-02-14 |
Family
ID=47668454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/069856 WO2013021946A1 (ja) | 2011-08-09 | 2012-08-03 | 化合物半導体研磨用組成物 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140248776A1 (ja) |
EP (1) | EP2743968A4 (ja) |
JP (1) | JPWO2013021946A1 (ja) |
TW (1) | TW201321491A (ja) |
WO (1) | WO2013021946A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015153852A (ja) * | 2014-02-13 | 2015-08-24 | 三菱化学株式会社 | 窒化物半導体基板の製造方法 |
CN106634833A (zh) * | 2016-12-16 | 2017-05-10 | 安徽宝恒新材料科技有限公司 | 一种不锈钢镜面板用研磨液及其制备方法 |
JP2018050065A (ja) * | 2014-03-31 | 2018-03-29 | 株式会社ノリタケカンパニーリミテド | GaN単結晶材料の研磨加工方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6611485B2 (ja) * | 2014-11-07 | 2019-11-27 | 株式会社フジミインコーポレーテッド | 研磨方法およびポリシング用組成物 |
CN114672252B (zh) * | 2022-04-11 | 2023-11-28 | 宁波日晟新材料有限公司 | 一种无味氮化铝抛光液及其制备方法和应用 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001068438A (ja) * | 1999-08-24 | 2001-03-16 | Speedfam Co Ltd | 化合物半導体ウェーハ研磨用組成物およびそれによる化合物半導体研磨方法 |
JP2005117027A (ja) | 2003-09-16 | 2005-04-28 | Matsushita Electric Ind Co Ltd | SiC基板の製造方法 |
JP2005167231A (ja) * | 2003-11-14 | 2005-06-23 | Showa Denko Kk | 研磨組成物および研磨方法 |
JP2009124160A (ja) * | 2008-12-26 | 2009-06-04 | Sumitomo Electric Ind Ltd | 窒化物結晶およびエピ層付窒化物結晶基板の製造方法 |
JP4350505B2 (ja) | 2001-06-08 | 2009-10-21 | クリー・インコーポレーテッド | 高表面品質GaNウェーハおよびその製造方法 |
JP2010251699A (ja) * | 2009-03-27 | 2010-11-04 | Osaka Univ | 研磨方法及び研磨装置 |
JP2010251492A (ja) * | 2009-04-15 | 2010-11-04 | Jsr Corp | 化学機械研磨用水系分散体および該分散体の調製方法、ならびに化学機械研磨方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040162011A1 (en) * | 2002-08-02 | 2004-08-19 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device |
JP2007103463A (ja) * | 2005-09-30 | 2007-04-19 | Sumitomo Electric Ind Ltd | ポリシングスラリー、GaxIn1−xAsyP1−y結晶の表面処理方法およびGaxIn1−xAsyP1−y結晶基板 |
JP2008010835A (ja) * | 2006-05-31 | 2008-01-17 | Sumitomo Electric Ind Ltd | 窒化物結晶の表面処理方法、窒化物結晶基板、エピタキシャル層付窒化物結晶基板および半導体デバイス、ならびにエピタキシャル層付窒化物結晶基板および半導体デバイスの製造方法 |
JP4523935B2 (ja) * | 2006-12-27 | 2010-08-11 | 昭和電工株式会社 | 炭化珪素単結晶基板の研磨用水系研磨スラリー及び研磨法。 |
JP2008181955A (ja) * | 2007-01-23 | 2008-08-07 | Fujifilm Corp | 金属用研磨液及びそれを用いた研磨方法 |
EP2152826B1 (en) * | 2007-05-24 | 2013-07-17 | Basf Se | Chemical-mechanical polishing composition comprising porous metal-organic framework materials |
JP5327427B2 (ja) * | 2007-06-19 | 2013-10-30 | Jsr株式会社 | 化学機械研磨用水系分散体調製用セット、化学機械研磨用水系分散体の調製方法、化学機械研磨用水系分散体および化学機械研磨方法 |
JP5317436B2 (ja) * | 2007-06-26 | 2013-10-16 | 富士フイルム株式会社 | 金属用研磨液及びそれを用いた研磨方法 |
JP5140469B2 (ja) * | 2007-09-12 | 2013-02-06 | 富士フイルム株式会社 | 金属用研磨液、及び化学的機械的研磨方法 |
KR101202720B1 (ko) * | 2008-02-29 | 2012-11-19 | 주식회사 엘지화학 | 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법 |
US8247328B2 (en) * | 2009-05-04 | 2012-08-21 | Cabot Microelectronics Corporation | Polishing silicon carbide |
JP5481166B2 (ja) * | 2009-11-11 | 2014-04-23 | 株式会社クラレ | 化学的機械的研磨用スラリー |
-
2012
- 2012-08-03 EP EP12822290.8A patent/EP2743968A4/en not_active Withdrawn
- 2012-08-03 US US14/237,262 patent/US20140248776A1/en not_active Abandoned
- 2012-08-03 WO PCT/JP2012/069856 patent/WO2013021946A1/ja active Application Filing
- 2012-08-03 JP JP2013528011A patent/JPWO2013021946A1/ja active Pending
- 2012-08-07 TW TW101128430A patent/TW201321491A/zh unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001068438A (ja) * | 1999-08-24 | 2001-03-16 | Speedfam Co Ltd | 化合物半導体ウェーハ研磨用組成物およびそれによる化合物半導体研磨方法 |
JP4350505B2 (ja) | 2001-06-08 | 2009-10-21 | クリー・インコーポレーテッド | 高表面品質GaNウェーハおよびその製造方法 |
JP2005117027A (ja) | 2003-09-16 | 2005-04-28 | Matsushita Electric Ind Co Ltd | SiC基板の製造方法 |
JP2005167231A (ja) * | 2003-11-14 | 2005-06-23 | Showa Denko Kk | 研磨組成物および研磨方法 |
JP2009124160A (ja) * | 2008-12-26 | 2009-06-04 | Sumitomo Electric Ind Ltd | 窒化物結晶およびエピ層付窒化物結晶基板の製造方法 |
JP2010251699A (ja) * | 2009-03-27 | 2010-11-04 | Osaka Univ | 研磨方法及び研磨装置 |
JP2010251492A (ja) * | 2009-04-15 | 2010-11-04 | Jsr Corp | 化学機械研磨用水系分散体および該分散体の調製方法、ならびに化学機械研磨方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015153852A (ja) * | 2014-02-13 | 2015-08-24 | 三菱化学株式会社 | 窒化物半導体基板の製造方法 |
JP2018050065A (ja) * | 2014-03-31 | 2018-03-29 | 株式会社ノリタケカンパニーリミテド | GaN単結晶材料の研磨加工方法 |
CN106634833A (zh) * | 2016-12-16 | 2017-05-10 | 安徽宝恒新材料科技有限公司 | 一种不锈钢镜面板用研磨液及其制备方法 |
CN106634833B (zh) * | 2016-12-16 | 2018-07-24 | 安徽宝恒新材料科技有限公司 | 一种不锈钢镜面板用研磨液及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2743968A4 (en) | 2015-03-18 |
TW201321491A (zh) | 2013-06-01 |
EP2743968A1 (en) | 2014-06-18 |
JPWO2013021946A1 (ja) | 2015-03-05 |
US20140248776A1 (en) | 2014-09-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102515964B1 (ko) | 연마용 조성물 | |
KR101868191B1 (ko) | 연마용 조성물 | |
WO2012165376A1 (ja) | 研磨剤および研磨方法 | |
TWI619805B (zh) | 用於硬脆材料之研磨用組成物、硬脆材料基板之研磨方法及製造方法 | |
US9157011B2 (en) | Polishing composition | |
KR102350734B1 (ko) | 사파이어 표면 연마용 화학적 기계적 연마 조성물 및 그의 사용방법 | |
WO2013021946A1 (ja) | 化合物半導体研磨用組成物 | |
JP2016524325A (ja) | 少なくとも1種のiii−v族材料を含有する基板または層を研磨するための化学機械研磨(cmp)組成物を使用する方法 | |
JP2017539077A (ja) | コバルトディッシング制御剤 | |
JP7424967B2 (ja) | ガリウム化合物系半導体基板研磨用組成物 | |
US9493678B2 (en) | Polishing composition | |
WO2018183310A1 (en) | Polishing compositions and methods of use thereof | |
US9796881B2 (en) | Polishing composition and method using said polishing composition to manufacture compound semiconductor substrate | |
KR102028217B1 (ko) | 연마용 조성물 | |
US8889553B2 (en) | Method for polishing through-silicon via (TSV) wafers and a polishing composition used in the method | |
US11851584B2 (en) | Alternative oxidizing agents for cobalt CMP | |
JP4707864B2 (ja) | 研磨用組成物およびそれを用いた研磨方法 | |
JP6788433B2 (ja) | 炭化珪素基板用研磨剤組成物 | |
TW201311840A (zh) | 化學機械拋光液 | |
JP2013201176A (ja) | ポリシングスラリー、及び第13族窒化物基板の製造方法 | |
JP2018067591A (ja) | 窒化物半導体基板用研磨剤組成物 | |
JP6381068B2 (ja) | 炭化ケイ素基板研磨用組成物 | |
SG187595A1 (en) | Chemical mechanical polishing slurry | |
TW202033692A (zh) | 化學機械拋光液及其應用 | |
TW201323589A (zh) | 研漿組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12822290 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2013528011 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14237262 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012822290 Country of ref document: EP |