SG187595A1 - Chemical mechanical polishing slurry - Google Patents
Chemical mechanical polishing slurry Download PDFInfo
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- SG187595A1 SG187595A1 SG2013005525A SG2013005525A SG187595A1 SG 187595 A1 SG187595 A1 SG 187595A1 SG 2013005525 A SG2013005525 A SG 2013005525A SG 2013005525 A SG2013005525 A SG 2013005525A SG 187595 A1 SG187595 A1 SG 187595A1
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- SG
- Singapore
- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing slurry
- slurry
- copper
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 54
- 239000002002 slurry Substances 0.000 title claims abstract description 51
- 239000000126 substance Substances 0.000 title claims abstract description 28
- 239000007800 oxidant agent Substances 0.000 claims abstract description 24
- 239000002245 particle Substances 0.000 claims abstract description 14
- 150000001413 amino acids Chemical class 0.000 claims abstract description 13
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 3
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 58
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 38
- 239000004471 Glycine Substances 0.000 claims description 19
- 229940024606 amino acid Drugs 0.000 claims description 12
- 235000001014 amino acid Nutrition 0.000 claims description 12
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 claims description 9
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 claims description 9
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 claims description 8
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052700 potassium Inorganic materials 0.000 claims description 7
- 239000011591 potassium Substances 0.000 claims description 7
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical group [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 6
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 claims description 6
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 4
- VKJKEPKFPUWCAS-UHFFFAOYSA-M potassium chlorate Chemical group [K+].[O-]Cl(=O)=O VKJKEPKFPUWCAS-UHFFFAOYSA-M 0.000 claims description 3
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical group N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004153 Potassium bromate Substances 0.000 claims description 2
- URGYLQKORWLZAQ-UHFFFAOYSA-N azanium;periodate Chemical group [NH4+].[O-]I(=O)(=O)=O URGYLQKORWLZAQ-UHFFFAOYSA-N 0.000 claims description 2
- 229960002989 glutamic acid Drugs 0.000 claims description 2
- 229940094037 potassium bromate Drugs 0.000 claims description 2
- 235000019396 potassium bromate Nutrition 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 29
- 239000010949 copper Substances 0.000 abstract description 29
- 229910052802 copper Inorganic materials 0.000 abstract description 28
- 229910052710 silicon Inorganic materials 0.000 abstract description 19
- 239000010703 silicon Substances 0.000 abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 16
- 239000002253 acid Substances 0.000 description 12
- 230000001590 oxidative effect Effects 0.000 description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- 230000000737 periodic effect Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000002378 acidificating effect Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000002738 chelating agent Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- OCATYIAKPYKMPG-UHFFFAOYSA-M potassium bromate Chemical compound [K+].[O-]Br(=O)=O OCATYIAKPYKMPG-UHFFFAOYSA-M 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- XRIBIDPMFSLGFS-UHFFFAOYSA-N 2-(dimethylamino)-2-methylpropan-1-ol Chemical group CN(C)C(C)(C)CO XRIBIDPMFSLGFS-UHFFFAOYSA-N 0.000 description 1
- 229940123208 Biguanide Drugs 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical group OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- -1 alcohol amine Chemical class 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 150000004283 biguanides Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229940031098 ethanolamine Drugs 0.000 description 1
- 150000002357 guanidines Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- FJVZDOGVDJCCCR-UHFFFAOYSA-M potassium periodate Chemical compound [K+].[O-]I(=O)(=O)=O FJVZDOGVDJCCCR-UHFFFAOYSA-M 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
The present invention relates to a chemical mechanical polishing slurry which includes abrasive particles, oxidants, amino acids, quaternary ammonium bases and water, and the pH of the chemical mechanical polishing slurry is alkaline. The slurry could accelerate the polishing rate of copper and silicon at the same time under an alkaline condition.
Description
A Chemical Mechanical Polishing Slurry
The present invention relates to abrasive substance, in particular, to a chemical mechanical polishing slurry.
TSV technology (Through-Silicon-Via) is a novel technology which can achieve the chip interconnection by creating a vertical access between chip and chip, and wafer and wafer.
The advantage of TSV over the conventional stacking technique using bump and IC bonding packaging is that it could maximize the density of chip in a three-dimensional direction, minimize the shape of chip and shorten the interconnection so as to improve the speed of chip and low power consumption. When polishing, the backside thinning technology of TSV technology requires a fairly high polishing rate of silicon and copper at the same time.
To achieve a high polishing rate, silicon commonly is polished under an alkaline condition.
For example, US2002032987 publishes slurry containing an alcohol amine as an additive so as to improve the removal rate of poly silicon, and the most preferred additive is 2-dimethylamino-2-methyl-1-propanol. US2002151252 provides a polishing composition containing a plurality of carboxylic acids as a chelating agent to improve the removal rate of poly silicon, and the chelating agent is preferably EDTA or DTPA. EP1072662 publishes a slurry having organic substances sharing a delocalization structure produced by lone-pair electrons and double-bond so that the slurry could accelerate the removal rate of poly silicon, and the organic substances are preferably guanidines and salts thereof,
US2006014390 discloses one kind of polishing solution used to improve the removal rate of poly silicon, and the solution comprises 4.25 to 18.5 weight percent of an abrasive, and 0.05 to 1.5 weight percent of an additive. And the additive is selected from the group consisting of quaternary ammonium, quaternary ammonium salt, ethanol amine and the like. In addition, the polishing solution further contains a nonionic surfactant such as homo-or co-polymers of ethylene glycol or propylene glycol. CN101497765A significantly improves the polishing rate of silicon by using the synergistic effects of biguanides and azoles.
To achieve a high polishing rate, copper commonly is polished under an acidic condition by use of high oxidation potential of oxidant (hydrogen peroxide) under an acidic condition and the property of which copper tends to complex and dissolve under an acidic condition. For example, CN1705725 publishes a slurry for polishing a copper surface, and the slurry removes the copper surface by use of an oxidant (hydrogen peroxide, etc), a chelating agent and a passivation agent at a pH between 2.5 and 4. CN1787895A discloses a CMP composition which includes a rheology agent, an oxidizing agent, a chelating agent, a passivation agent, an abrasive and a solvent. Under an acidic condition, this kind of CMP composition advantageously improves material selectivity, and it could be used for polishing semiconductor substrates having copper thereon without dishing into the polished copper or other unfavorable planarization defects. CN01818940A discloses a copper-polishing slurry which could significantly improves the removal rate of copper by further combination with an oxidant agent such as hydrogen peroxide and/ or a corrosion inhibitor such as benzotriazole. And high polish rate is achieved while maintaining local pH stability and substantially reducing global and local corrosion.
Sometimes copper is polished under an alkaline condition. For example, CN1644640A discloses an aqueous composition useful for polishing copper under an alkaline condition.
Said composition comprises weight percent 0.001 to 6 an inhibitor for a nonferrous metal, : 10.05 to 10 a complexing agent for the metal, 0.01 to 25 a copper removal agent for accelerating the removal of the copper, 0.5 to 40 an abrasive, etc and accelerates the removal rate of copper by interaction of imidazoles for accelerating the polishing of the copper and BTA. CN1398938A discloses global planarization CMP slurry for multilayer copper wire in large scale integrated circuit, used for improving the removal rate of copper.
Said slurry comprises the following ingredients: 18 to 50 weight percent of an abrasive, ,
0.1 to 10 weight percent of a chelating agent, 0.005 to 25 weight percent of a complexing agent, 0.1 to 10 weight percent of an active agent, 1 to 20 weight percent of an oxidant agent and de-ionized water.
In the prior art, although the polishing rate of copper would be high under an acidic condition, the polishing rate of silicon usually is low. The reason is that under an acidic condition, a silicon surface oxidizes to form silicon dioxide because of the effect of oxidant, and compared with the silicon, silicon dioxide is more difficult to remove.
Although the polishing rate of silicon would be high without oxidant under an alkaline condition, the polishing rate of copper usually is low. Because copper needs to be oxidized so that could be easily removed. However, if an oxidant, such as hydrogen peroxide, is added, a silicon surface will oxidize to form silicon dioxide because of the effect of oxidant. In addition, an oxidant, such as hydrogen peroxide, is unstable and decomposes rapidly under an alkaline condition.
The object of the present invention is to provide chemical mechanical polishing slurry which can accelerate the polishing rate of copper and silicon at the same time under an alkaline condition.
The chemical mechanical polishing slurry of the present application includes abrasive particles, oxidants, amino acids, quaternary ammonium bases and water, and the pH of the chemical mechanical polishing slurry is alkaline.
In the present invention, wherein said abrasive particles may be one or more selected from a group consisting of SiO». ALOs3. ZrO,. CeO,. SiC. Fe;0O3. TiO; and /or Si3Na. And the concentration of the abrasive particles may be in the range of 1-30% (weight percent).
In the present invention, said oxidants may be one or more selected from a group consisting of bromate, chlorate, iodate, periodic acid and/or periodate. Said bromate may be potassium bromate, said chlorate may be potassium chlorate, said iodate may be potassium iodate, and said periodate may be ammonium periodate. And the concentration
: of said oxidants may be in the range of 0.5-4% (weight percent).
In the present invention, said amino acids may be selected from glycine and/ or L- glutamic acid. And the concentration of said amino acids may be in the range of 1-8% (weight percent).
In the present invention, said quaternary ammonium bases could be tetramethylammonium hydroxide (TMAH). And the concentration of said quaternary ammoniums may be in the range of 5-12% (weight percent).
In the present invention, the pH of said chemical mechanical polishing slurry may be in the range from 8.00 to 13.00.
The beneficial effects according to the present invention lie in that the polishing slurry according to the present invention could significantly accelerates the polishing rate of Cu and silicon under an alkaline condition.
Mode for Carrying Out the Invention
The following examples further illustrate the invention but, of course, should not be construed as in any way limiting its scope. And in the following examples, % stands for weight percent.
Table 1 provides compositions that were homogeneously mixed with de-ionized water to prepare chemical mechanical polishing slurry according to each of Examples 1-23 and
Comparative Examples 1-4. And pH was adjusted to the desired value using a pH adjuster (50% KOH).
Table 1 Examples 1-23 of the chemical mechanical polishing slurry for present invention and comparative examples 1-4 _ 4 -
abrasive polyhydroxy quaternary oxidants PH : particles compounds -ammonium bases oncent concent concent concent : Kind Kind Kind Kind ration ration ration ration
Comparative
SiO; | 1% TMAH | 0.10% | 10.5
Example 1
Comparative
SiO; | 2% TMAH {| 0.10% | 10.5
Example 2
Comparative
SiO, | 5% TMAH | 0.10% | 10.5
Example 3
Comparative
SiO; | 15% TMAH | 0.10% | 10.5
Example 4 potassium
Example 1 | SiO, | 1% 0.50% | glycine 2% |TMAH | 8.00% | 11.46 bromate potassium
Example 2 |SiO, | 1% 1% glycine 2% |TMAH | 8.00% | 11.51 bromate potassium
Example 3 |SiO, | 2% 2% glycine 2% |TMAH | 8.00% (10.603 bromate potassium
Example 4 |SiO, | 2% 2% glycine 4% |TMAH | 10.00% | 10.8 bromate potassium
Example 5 |] SiO; | 2% 4% glycine 4% |TMAH | 10.00% {| 11.4 bromate : potassium
Example 6 |SiO; | 2% 2% glycine 4% |TMAH | 10.00% {10.894 iodate periodic
Example 7 | SiO; | 2% 1% glycine 4% |TMAH | 10.00% | 10.8 . acid periodic
Example 8 | SiO; | 2% 2% glycine 4% |TMAH | 10.00% [10.592 acid : periodic L-glutami
Example 9 |SiO; | 2% 1% 4% |TMAH | 10.00% | 10.8 acid c acid } periodic L-glutami
Example 10 | SiO; | 2% 1% 2% {TMAH | 8.00% acid c acid periodic
Example 11 oo [7 1% glycine 2% |TMAH | 8.00% [10.593 acid periodic
Example 12 om [7 1% glycine 1% [TMAH | 6.00% (10.373 acid potassium chlorate periodic
Example 14 os [7 1% glycine 8% [TMAH | 12.00% | 11.35 acid potassium
Example 15 |Fe,O3 | 5% 3% glycine 2% |TMAH | 8.00% 10 bromate periodic
Example 16 oo [7 3% glycine 1% |TMAH | 5.00% { 11.13 acid potassium : Example 17 | SiO, | 15% 3% glycine 4% |TMAH | 10.00% | 10.63 bromate potassium
Example 18 |ALO; | 15% 3% glycine 8% |TMAH | 12.00% | 13 iodate } potassium L-glutami
Example 19 |SisNy | 15% 1% 6% |TMAH | 11.00% | 10.44 : bromate c acid ammoniu
L-glutami
Example 20 | SiC | 15% m 0.50% 6% |TMAH | 11.00% | 12 c acid periodate _ 6 - :
potassium
Example 21 | SiO, | 25% 3% glycine 2% |TMAH | 8.00% 8 bromate ammoniu
Example 22 {CeO; | 25% m 0.50% | glycine 2% |TMAH | 8.00% | 10.54 periodate potassium L-glutami
Example 23 | ZrO, | 30% 4% 1% |TMAH | 5.00% | 10.2 bromate ~ cacid
To further observe the polishing effect of the present invention, the polishing was performed according to the following conditions: Logitech (UK) 1PM 52 polishing machine, polytex polishing pad, 4cm*4cm square wafer, downward pressure = 3 psi; rotating speed of the polishing plate=70rpm, rotating speed of the polishing head = 150rpm; flow rate of the polishing slurry = 100 mL/min. The results are shown in Table 2.
Table 2 the polishing effect of Examples 1-23 of the chemical mechanical polishing slurry for present invention and comparative examples 1-4 ;
Comparative 130 1455
Example 1
Comparative 224 1581.6
Example 2
Example 3
EEE
392 1904.4
Example 4
From the results of Comparative Examples 1-4, it indicates that the slurry rate of silicon and copper are very low under an alkaline condition when the slurry only contains abrasive particles.
Compared the Examples 1-2 with Comparative Example 1, it indicates that under same concentration of abrasive particles, the slurry rate of silicon and copper significantly increases when the alkaline slurry contains a specific oxidant, amino acid and quaternary ammonium base of the present application.
Compared the Examples 3-10 with Comparative Example 2, it indicates that under same concentration of abrasive particles, the slurry rate of silicon and copper significantly increases when the alkaline slurry contains a specific oxidant, amino acid and quaternary ammonium base of the present application.
Compared the Example 11 with Comparative Example 3, it indicates that under same concentration of abrasive particles, the slurry rate of silicon and copper significantly increases when the alkaline slurry contains a specific oxidant, amino acid and quaternary ammonium base of the present application.
Compared the Examples 12-13 with Comparative Example 4, it indicates that under same concentration of abrasive particles, the slurry rate of silicon and copper significantly increases when the alkaline slurry contains a specific oxidant, amino acid and quaternary ammonium base of the present application.
Compared the Example 1 with Example 2, Example 4 with Example 5, Example 7 with
Example 8, it indicates that under same concentration of amino acid, by changing the concentration of oxidants in alkaline slurry, the slurry rate of copper significantly increases with the increase of the concentration of oxidants, and the slurry rate of silicon is not suppressed at the same time.
Compared the Example 3 with Comparative Example 4, Example 9 with Example 10, it indicates that the slurry rate of copper and silicon significantly increases with the increase of the concentration of amino acids.
Compared the Example 7 with Comparative Example 11, it indicates that the slurry rate of copper and silicon significantly increases with the increase of the concentration of abrasive particles. :
Claims (11)
1. A chemical mechanical polishing slurry, comprising abrasive particles, oxidants, amino acids, quaternary ammonium bases and water, and the pH of said chemical mechanical polishing slurry is alkaline.
2. A chemical mechanical polishing slurry of Claim 1, wherein said abrasive particles are one or more selected from a group consisting of SiO. Al,O3.Zr0,.Ce0,. SiC. Fe;03. TiO, and for SisNs.
3. A chemical mechanical polishing slurry of Claim 1, wherein the weight concentration of said abrasive particles is in the range of 1-30%.
4. A chemical mechanical polishing slurry of Claim 1, wherein said oxidants are one or more selected from a group consisting of bromate, chlorate, iodate, periodic acid ; and/or periodate.
5. A chemical mechanical polishing slurry of Claim 4, wherein said bromate is potassium bromate, said chlorate is potassium chlorate, said iodate is potassium jiodate, and said periodate is ammonium periodate.
6. A chemical mechanical polishing slurry of Claim 1, wherein the weight concentration of said oxidants is in the range of 0.5-4%.
7. A chemical mechanical polishing slurry of Claim 1, wherein said amino acids are selected from glycine and/ or L- glutamic acid.
8. A chemical mechanical polishing slurry of Claim 1, wherein the weight concentration of said amino acids is in the range of 1-8%.
9. A chemical mechanical polishing slurry of Claim 1, wherein said quaternary ammonium bases are tetramethylammonium hydroxide. :
10. A chemical mechanical polishing slurry of Claim 1 wherein the weight concentration of said quaternary ammonium bases is in the range of 5-12%.
11. A chemical mechanical polishing slurry of Claim 1, wherein the pH of said chemical mechanical polishing slurry ranges from 8.00-13.00.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010234685.8A CN102337079B (en) | 2010-07-23 | 2010-07-23 | Chemically mechanical polishing agent |
| PCT/CN2011/001216 WO2012009967A1 (en) | 2010-07-23 | 2011-07-25 | Chemical mechanical polishing slurry |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG187595A1 true SG187595A1 (en) | 2013-03-28 |
Family
ID=45496478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013005525A SG187595A1 (en) | 2010-07-23 | 2011-07-25 | Chemical mechanical polishing slurry |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101513986B1 (en) |
| CN (1) | CN102337079B (en) |
| SG (1) | SG187595A1 (en) |
| WO (1) | WO2012009967A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104385116A (en) * | 2014-09-24 | 2015-03-04 | 尹涛 | Polishing method of SiC semiconductor material |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| JP2002231666A (en) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | Composition for polishing, and polishing method using the composition |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| TW200424299A (en) * | 2002-12-26 | 2004-11-16 | Kao Corp | Polishing composition |
| US7160807B2 (en) * | 2003-06-30 | 2007-01-09 | Cabot Microelectronics Corporation | CMP of noble metals |
| US20050136670A1 (en) * | 2003-12-19 | 2005-06-23 | Ameen Joseph G. | Compositions and methods for controlled polishing of copper |
| US7582127B2 (en) * | 2004-06-16 | 2009-09-01 | Cabot Microelectronics Corporation | Polishing composition for a tungsten-containing substrate |
| US20060135045A1 (en) * | 2004-12-17 | 2006-06-22 | Jinru Bian | Polishing compositions for reducing erosion in semiconductor wafers |
| JP4990543B2 (en) * | 2006-03-23 | 2012-08-01 | 富士フイルム株式会社 | Polishing liquid for metal |
| CN101077961B (en) * | 2006-05-26 | 2011-11-09 | 安集微电子（上海）有限公司 | Polishing fluid for smoothing treatment of refined surface and use method thereof |
| CN101130665A (en) * | 2006-08-25 | 2008-02-27 | 安集微电子（上海）有限公司 | Polishing solution used for polishing low-dielectric materials |
| CN101130666B (en) * | 2006-08-25 | 2011-11-09 | 安集微电子（上海）有限公司 | Polishing solution containing mixed abrasive material of dielectric materials |
| JP2008192930A (en) * | 2007-02-06 | 2008-08-21 | Fujifilm Corp | Metal polishing composition and chemical mechanical polishing method using the same |
-
2010
- 2010-07-23 CN CN201010234685.8A patent/CN102337079B/en active Active
-
2011
- 2011-07-25 KR KR1020137004366A patent/KR101513986B1/en active IP Right Grant
- 2011-07-25 WO PCT/CN2011/001216 patent/WO2012009967A1/en active Application Filing
- 2011-07-25 SG SG2013005525A patent/SG187595A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130091333A (en) | 2013-08-16 |
| WO2012009967A1 (en) | 2012-01-26 |
| CN102337079A (en) | 2012-02-01 |
| KR101513986B1 (en) | 2015-04-22 |
| CN102337079B (en) | 2015-04-15 |
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