CN101130666B - Polishing solution containing mixed abrasive material of dielectric materials - Google Patents
Polishing solution containing mixed abrasive material of dielectric materials Download PDFInfo
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- CN101130666B CN101130666B CN2006100304591A CN200610030459A CN101130666B CN 101130666 B CN101130666 B CN 101130666B CN 2006100304591 A CN2006100304591 A CN 2006100304591A CN 200610030459 A CN200610030459 A CN 200610030459A CN 101130666 B CN101130666 B CN 101130666B
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- dioxide
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
The invention discloses a low dielectric material buffing liquid with mixing abrasive, which is characterized by the following: comprising two or above two buffing abrasive; setting one of the abrasive as earth silicon with aluminum; setting the second abrasive as one or several of earth silicon, aluminum oxide, aluminum oxide wrapped aluminum oxide or zirconium oxide wrapped earth silicon; adjusting glaze speed of low dielectric material blended silicon carbide oxide (CDO) and earth silicon (TEOS) at the same time; preventing local and integral erosion during polishing course; improving yield of the product. This invention can be used to integrated circuit with metal, metallic barrier layer, earth silicon blended with carbon and earth silicon structure.
Description
Technical field
The present invention relates to a kind of polishing fluid, relate in particular to a kind of low-dielectric material lapping liquid that contains compound abrasive.
Background technology
In unicircuit was made, the standard of interconnection technique deposited one deck again improving above one deck, make to have formed irregular pattern at substrate surface.A kind of flattening method that uses in the prior art is exactly chemically machinery polished (CMP), and CMP technology just is to use a kind of mixture and polishing pad that contains abrasive material to go to polish an integrated circuit surface.In typical cmp method, substrate is directly contacted with rotating polishing pad, exert pressure at substrate back with a loads.During polishing, pad and operator's console rotation, the power that keeps down at substrate back is applied to abrasive material and chemically reactive solution (being commonly referred to polishing fluid or polishing slurries) on the pad simultaneously, and this polishing fluid begins to carry out polishing process with the film generation chemical reaction that is polishing.
In most CMP polishing fluids, often adopt various inorganic or organic granulars as abrasive material, for example silicon-dioxide, aluminum oxide, zirconium dioxide, cerium oxide, ferric oxide, polymer beads and/or their mixture etc.Because these inorganic or organic granulars have characteristics such as different particle diameters, hardness, surface chemistry group, and various polishing substrates are often shown different polishing performances, especially to the polishing speed of base material with select than on to have very big difference.
Therefore, in number of C MP polishing fluid, can adopt two or more abrasive material, with polishing speed that improves various base materials and the selection ratio of regulating them.Such as US6,896,590 disclosed polishing fluids are mainly the compound abrasive system of two kinds of different-size particles, and compare in order to polishing speed and the selection of adjusting and control metal, blocking layer and silicon-dioxide: the particle diameter of first kind of particle is 5-50nm; The particle diameter of another kind of particle is 50-100nm.US6,896,591 disclosedly contain three kinds of abrasive systems, are mainly used in polishing nickel phosphide base material: the alpha aluminium oxide particle of (1) high rigidity; (2) gaseous oxidation aluminum particulate and (3) silica dioxide granule.And US6, the abrasive silica system of two kinds of different-grain diameters of 924,227 disclosed employings is polished Cu and blocking layer Ta or TaN, and improves defectives such as corrosion in the polishing process and scratch.The abrasive silica system of these two kinds of different-grain diameters is: the particle diameter of (1) first kind of silicon-dioxide is 5-30nm; The initial particle of (2) second kinds of silicon-dioxide is less than 5nm.On the system basis of above-mentioned polishing fluid, can also add the third particle to form new barrier polishing solution, this third particle is an alumina particle.
Summary of the invention
Purpose of the present invention provides a kind of low-dielectric material lapping liquid that contains compound abrasive, and is applied to contain simultaneously in the unicircuit of metal, CDO and TEOS structure.
Above-mentioned purpose of the present invention realizes by following technical proposal: polishing fluid of the present invention comprises two or more polish abrasive, wherein a kind of abrasive material is for mixing aluminium silicon-dioxide, and second kind of abrasive material comprises silicon-dioxide, aluminum oxide, aluminium parcel silicon-dioxide and/or zirconium parcel silicon-dioxide.
Second kind of abrasive material described in the invention is silicon-dioxide.
The described mass percent concentration of mixing the aluminium abrasive silica preferably is 0.5～15%.
The described particle diameter of mixing aluminium silicon dioxide gel abrasive material is preferably 5～500nm; More preferably be 10～100nm.
The mass percent concentration of second kind of abrasive material described in the invention preferably is 0.5～15%.
The particle diameter of described second kind of abrasive material is preferably 10～100nm.
The pH value of described polishing fluid preferably is 2～12.
Polishing fluid of the present invention also comprise stopping agent, oxygenant, speed increase auxiliary agent or tensio-active agent one or more.
Wherein said stopping agent is preferably benzotriazole.
Described oxygenant is preferably hydrogen peroxide.
Described speed increases auxiliary agent and is preferably in organic carboxyl acid, organic carboxylate, amino acid or the organic phosphoric acid one or more; It more preferably is in oxalic acid, tartrate, Succinic Acid, n-Butyl Amine 99, ammonium tartrate, ammonium pentaborate, glycine or the ethylenediamine tetraacetic methene phosphoric acid one or more that described speed increases auxiliary agent.
Described tensio-active agent comprises anion surfactant, cats product, non-ionic surface active and zwitterionics; Be preferably in polyacrylamide, dextran, polyacrylic acid, polyoxyethylene glycol, Sodium dodecylbenzene sulfonate, Trimethyllaurylammonium bromide or the TBAH one or more.
Polishing fluid of the present invention is used to polish the unicircuit that comprises metal, blocking layer, silicon-dioxide and dielectric materials structure.
Positive progressive effect of the present invention is: when polishing fluid of the present invention can be adjusted the polishing speed of dielectric materials silicon oxide (BD) and TEOS preferably, prevent from the part and the general corrosion that produce in the medal polish process to improve the product yield.And can be applied in the unicircuit that contains metal, carbon-doped silicon oxide (CDO) and silicon-dioxide (TEOS) structure simultaneously.
Description of drawings
Fig. 1 is the polishing speed figure that mixes aluminium silicon-dioxide and compound abrasive system thereof;
Fig. 2 is a particle diameter of mixing aluminium silicon-dioxide influences figure to the polishing speed of dielectric materials;
Fig. 3 is the polishing speed influence figure of the particle diameter of compound abrasive to dielectric materials;
Fig. 4 is the polishing speed figure of the compound abrasive of different amounts;
Fig. 5 is the polishing speed figure of the compound abrasive of different amounts;
Fig. 6 is the polishing speed figure of the compound abrasive of different amounts;
Fig. 7 is the polishing speed influence figure of the pH value of polishing fluid of the present invention to dielectric materials;
Fig. 8 is that the compound abrasive of polishing fluid of the present invention and the composite behaviour that speed increases auxiliary agent influence figure;
Fig. 9 is the compound abrasive of polishing fluid of the present invention and the composite behaviour influence figure of tensio-active agent.
Figure 10 is the polishing material structural representation of polishing fluid of the present invention
Embodiment
Polishing fluid 1: mix aluminium silicon-dioxide (45nm) 5%, aluminum oxide parcel silicon-dioxide (20nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 2: mix aluminium silicon-dioxide (45nm) 5%, zirconium white parcel silicon-dioxide (20nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=2;
Polishing fluid 3: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 4: mix aluminium silicon-dioxide (45nm) 5%, gaseous oxidation aluminium (initial particle 15nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3.
Polishing material: BD material; Polishing condition: 1.5psi, polishing disk rotating speed 70rpm, polishing pad Politex, polishing fluid flow velocity 100ml/min, Logitech PM5 Polisher.
The result is as shown in Figure 1: after the present invention adopted and mixes aluminium silicon-dioxide and different auxiliary abrasives is formed the compound abrasive system, its polishing fluid can be regulated and control the polishing speed of dielectric materials preferably and select to compare.
Polishing fluid 5 (1): mix aluminium silicon-dioxide (20nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 5 (2): mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 5 (3): mix aluminium silicon-dioxide (80nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3.
Polishing fluid 6 (1): mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (20nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 6 (2): mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 6 (3): mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (120nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3.
Polishing material: BD material; Polishing condition: 1.5psi, polishing disk rotating speed 70rpm, polishing pad Politex, polishing fluid flow velocity 100ml/min, Logitech PM5 Polisher.
The abrasive silica of mixing aluminium abrasive silica and 20～140nm of result such as Fig. 2, shown in Figure 3: 20～80nm all is suitable for the present invention, and along with the increase of mixing aluminium abrasive silica particle diameter, polishing speed rises, and therefore the aluminium abrasive silica of mixing greater than 80nm also is suitable for the present invention.But along with the increase of abrasive silica particle diameter, TEOS descends on the contrary, and therefore the abrasive silica particle diameter greater than 120nm is not suitable for the present invention.
Polishing fluid 7 (1): mix aluminium silicon-dioxide (45nm) 0.5%, silicon-dioxide (100nm) 7%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 7 (2): mix aluminium silicon-dioxide (45nm) 7%, silicon-dioxide (100nm) 7%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 7 (3): mix aluminium silicon-dioxide (80nm) 15%, silicon-dioxide (100nm) 7%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3.
Polishing fluid 8 (1): mix aluminium silicon-dioxide (45nm) 7%, silicon-dioxide (70nm) 0.5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 8 (2): mix aluminium silicon-dioxide (45nm) 7%, silicon-dioxide (100nm) 7%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 8 (3): mix aluminium silicon-dioxide (80nm) 7%, silicon-dioxide (100nm) 15%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3.
Polishing fluid 8 (4): mix aluminium silicon-dioxide (45nm) 1%, silicon-dioxide (100nm) 9%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 8 (5): mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (100nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 8 (6): mix aluminium silicon-dioxide (80nm) 9%, silicon-dioxide (100nm) 1%, tartrate 0.2%, BTA0.2%, H2O20.3%, pH=3.
Polishing material: BD material; Polishing condition: 1.5psi, polishing disk rotating speed 70rpm, polishing pad Politex, polishing fluid flow velocity 100ml/min, Logitech PM5Polisher.
Result such as Fig. 4, Fig. 5, shown in Figure 6: when to mix the aluminium concentration of silicon dioxide be between 0.5%～15% or concentration of silicon dioxide is between 0.5%～15% the time, polishing fluid of the present invention can significantly increase the polishing speed of dielectric materials BD and silicon-dioxide TEOS.Simultaneously in above-mentioned concentration range, mix concentration ratio between aluminium silicon-dioxide and the silicon-dioxide by change, polishing fluid of the present invention also can be regulated and control the polishing speed of dielectric materials BD and silicon-dioxide TEOS and select ratio.
Polishing fluid 9 (1): polishing fluid 9 (2): mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=2;
Polishing fluid 9 (2): mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 9 (3): mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=7;
Polishing fluid 9 (4): mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=10;
Polishing fluid 9 (5): mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=12.
Polishing material: BD material; Polishing condition: 1.5psi, polishing disk rotating speed 70rpm, polishing pad Politex, polishing fluid flow velocity 100ml/min, Logitech PM5Polisher.
The result is as shown in Figure 7: when the pH of polishing fluid value is 2～7, can regulate and control the polishing speed of dielectric materials preferably by the pH value that changes polishing fluid of the present invention.
Polishing fluid 10: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, oxalic acid 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 11: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, Succinic Acid 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 12: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, n-Butyl Amine 99 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 13: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, ammonium tartrate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 14: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, ammonium pentaborate 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 15: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, glycine 0.2%, BTA0.2%, H
2O
20.3%, pH=3;
Polishing fluid 16: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, ethylenediamine tetraacetic methene phosphoric acid 0.2%, BTA0.2%, H
2O
20.3%, pH=3.
Polishing fluid 17: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, polyoxyethylene glycol (PEG) (molecular weight is 200) 0.2%, pH=3;
Polishing fluid 18: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, dextran (molecular weight is 20,000) 0.2%, pH=3;
Polishing fluid 19: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, BYK1540.2%, pH=3;
Polishing fluid 20: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, polyacrylamide (molecular weight M
w=3,000,000) 0.2%, pH=3;
Polishing fluid 21: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, TBAH 0.07%, pH=3;
Polishing fluid 22: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, Trimethyllaurylammonium bromide 0.1%, pH=3;
Polishing fluid 23: mix aluminium silicon-dioxide (45nm) 5%, silicon-dioxide (70nm) 5%, tartrate 0.2%, BTA0.2%, H
2O
20.3%, Sodium dodecylbenzene sulfonate 0.1%, pH=3;
Polishing material: BD material; Polishing condition: 1psi, polishing disk rotating speed 70rpm, polishing pad Politex, polishing fluid flow velocity 100ml/min, Logitech PM5Polisher.
Result such as Fig. 8, shown in Figure 9: increase the polishing speed that dielectric materials could further be regulated and control to auxiliary agent and/or tensio-active agent preferably by changing speed in the polishing fluid of the present invention.
Raw material used in the present invention and reagent are the commercially available prod.
Claims (15)
1. low-dielectric material lapping liquid that contains compound abrasive, this polishing fluid comprises two or more polish abrasives, and be selected from stopping agent, oxygenant, speed and increase in auxiliary agent or the tensio-active agent one or more, it is characterized in that: wherein a kind of abrasive material is for mixing aluminium silicon-dioxide, and second kind of abrasive material comprises that silicon-dioxide, aluminum oxide, aluminium parcel silicon-dioxide or zirconium wrap up one or more in the silicon-dioxide.
2. polishing fluid according to claim 1 is characterized in that: described second kind of abrasive material is silicon-dioxide.
3. polishing fluid according to claim 2 is characterized in that: the described mass percent concentration of mixing the aluminium abrasive silica is 0.5～15%.
4. polishing fluid according to claim 2 is characterized in that: the described particle diameter of mixing aluminium silicon dioxide gel abrasive material is 5～500nm.
5. polishing fluid according to claim 4 is characterized in that: the described particle diameter of mixing aluminium silicon dioxide gel abrasive material is 10～100nm.
6. in the polishing fluid according to claim 2, the mass percent concentration that it is characterized in that described second kind of abrasive material is 0.5～15%.
7. in the polishing fluid according to claim 2, the particle diameter that it is characterized in that described second kind of abrasive material is 10～100nm.
8. according to each described polishing fluid of claim 1 to 7, it is characterized in that: the pH value of described polishing fluid is 2～12.
9. polishing fluid according to claim 1 is characterized in that: described stopping agent is a benzotriazole.
10. polishing fluid according to claim 1 is characterized in that: described oxygenant is a hydrogen peroxide.
11. polishing fluid according to claim 1 is characterized in that: it is in organic carboxyl acid, organic carboxylate or the organic phosphoric acid one or more that described speed increases auxiliary agent.
12. polishing fluid according to claim 11 is characterized in that: it is in oxalic acid, tartrate, Succinic Acid, ammonium tartrate, ammonium pentaborate, glycine or the ethylenediamine tetraacetic methene phosphoric acid one or more that described speed increases auxiliary agent.
13. according to polishing fluid as claimed in claim 1, it is characterized in that: described tensio-active agent comprises anion surfactant, cats product, non-ionic surface active and zwitterionics.
14., it is characterized in that according to polishing fluid as claimed in claim 13: described tensio-active agent be in polyacrylamide, dextran, polyacrylic acid, polyoxyethylene glycol, Sodium dodecylbenzene sulfonate, Trimethyllaurylammonium bromide or the TBAH one or more.
15. according to polishing fluid as claimed in claim 2, it is characterized in that: described polishing fluid is used to polish the unicircuit that comprises metal, blocking layer and dielectric materials structure.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100304591A CN101130666B (en) | 2006-08-25 | 2006-08-25 | Polishing solution containing mixed abrasive material of dielectric materials |
| TW95136466A TW200815570A (en) | 2006-08-25 | 2006-09-29 | Low dielectric polishing slurry including mixed abrasive particles |
| PCT/CN2007/002101 WO2008025208A1 (en) | 2006-08-25 | 2007-07-09 | Polishing slurry containing blended abrasives for low dielectric material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100304591A CN101130666B (en) | 2006-08-25 | 2006-08-25 | Polishing solution containing mixed abrasive material of dielectric materials |
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| Publication Number | Publication Date |
|---|---|
| CN101130666A CN101130666A (en) | 2008-02-27 |
| CN101130666B true CN101130666B (en) | 2011-11-09 |
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| CN2006100304591A Active CN101130666B (en) | 2006-08-25 | 2006-08-25 | Polishing solution containing mixed abrasive material of dielectric materials |
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| Country | Link |
|---|---|
| CN (1) | CN101130666B (en) |
| TW (1) | TW200815570A (en) |
| WO (1) | WO2008025208A1 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102101981B (en) * | 2009-12-18 | 2014-08-20 | 安集微电子（上海）有限公司 | Polishing solution used for planarization of dielectric material |
| CN102337079B (en) * | 2010-07-23 | 2015-04-15 | 安集微电子（上海）有限公司 | Chemically mechanical polishing agent |
| US9487674B2 (en) * | 2011-09-07 | 2016-11-08 | Basf Se | Chemical mechanical polishing (CMP) composition comprising a glycoside |
| CN103205205B (en) * | 2012-01-16 | 2016-06-22 | 安集微电子（上海）有限公司 | A kind of alkaline chemical mechanical polishing liquid |
| CN103952083B (en) * | 2014-04-09 | 2016-04-27 | 贵州亿科新材料有限公司 | A kind of hard kaoline produces the method for polishing powder |
| CN106916536B (en) * | 2015-12-25 | 2021-04-20 | 安集微电子（上海）有限公司 | Alkaline chemical mechanical polishing solution |
| CN108250978A (en) * | 2016-12-28 | 2018-07-06 | 安集微电子科技（上海）股份有限公司 | A kind of chemical mechanical polishing liquid and its application |
| CN109972145B (en) * | 2017-12-27 | 2023-11-17 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
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| CN1693406A (en) * | 2003-12-24 | 2005-11-09 | 美国福吉米股份有限公司 | Polishing composition and polishing method |
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| US6893476B2 (en) * | 2002-12-09 | 2005-05-17 | Dupont Air Products Nanomaterials Llc | Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal |
| US7022255B2 (en) * | 2003-10-10 | 2006-04-04 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition with nitrogen containing polymer and method for use |
| US20070037892A1 (en) * | 2004-09-08 | 2007-02-15 | Irina Belov | Aqueous slurry containing metallate-modified silica particles |
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- 2006-08-25 CN CN2006100304591A patent/CN101130666B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1629246A (en) * | 2003-12-15 | 2005-06-22 | 长兴化学工业股份有限公司 | Chemically mechanical grinding pulp and using method thereof |
| CN1693406A (en) * | 2003-12-24 | 2005-11-09 | 美国福吉米股份有限公司 | Polishing composition and polishing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200815570A (en) | 2008-04-01 |
| WO2008025208A1 (en) | 2008-03-06 |
| CN101130666A (en) | 2008-02-27 |
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