WO2013003991A8 - 一种基于金属co的抛光工艺的抛光液及其应用 - Google Patents

一种基于金属co的抛光工艺的抛光液及其应用 Download PDF

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Publication number
WO2013003991A8
WO2013003991A8 PCT/CN2011/002027 CN2011002027W WO2013003991A8 WO 2013003991 A8 WO2013003991 A8 WO 2013003991A8 CN 2011002027 W CN2011002027 W CN 2011002027W WO 2013003991 A8 WO2013003991 A8 WO 2013003991A8
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WO
WIPO (PCT)
Prior art keywords
metal
polishing
polishing liquid
process based
oxidant
Prior art date
Application number
PCT/CN2011/002027
Other languages
English (en)
French (fr)
Other versions
WO2013003991A1 (zh
Inventor
鲁海生
屈新萍
王敬轩
Original Assignee
复旦大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 复旦大学 filed Critical 复旦大学
Priority to JP2013523470A priority Critical patent/JP2014509064A/ja
Priority to US13/813,699 priority patent/US20130140273A1/en
Priority to EP11867101.5A priority patent/EP2592122A4/en
Priority to KR1020137002473A priority patent/KR101439797B1/ko
Publication of WO2013003991A1 publication Critical patent/WO2013003991A1/zh
Publication of WO2013003991A8 publication Critical patent/WO2013003991A8/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

本发明公开了一种基于金属Co的抛光工艺的抛光液及其应用，该抛光液组分包含以下按重量百分数计的原料：抑制剂0.01-2%，氧化剂0-5%，研磨颗粒0.1-10%，螯合剂0.001-10%，余量为水；上述原料通过pH值调节剂调节至该抛光液的pH值为3-5；该抑制剂选自含8、N或同时含S和N的五元杂环衍生物中的任意一种以上；该氧化剂选自过氧化氢，过硫酸铵，高碘酸钾，高氯酸钾中的任意一种以上；该研磨颗粒选自二氧化硅，二氧化铈，三氧化二铝中的任意一种以上；该螯合剂选择：氨基酸或柠檬酸或二者的混合物。本发明的抛光液能有效抑制钴的静态腐蚀，降低钴的抛光速率，防止钴在抛光过程中的过腐蚀。
PCT/CN2011/002027 2011-07-05 2011-12-05 一种基于金属co的抛光工艺的抛光液及其应用 WO2013003991A1 (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013523470A JP2014509064A (ja) 2011-07-05 2011-12-05 コバルトの化学機械研磨用スラリー
US13/813,699 US20130140273A1 (en) 2011-07-05 2011-12-05 Slurry for chemical mechanical polishing of cobalt
EP11867101.5A EP2592122A4 (en) 2011-07-05 2011-12-05 CLEANING LIQUID FOR METAL-CO-BASED CLEANING PROCESSES AND USE THEREOF
KR1020137002473A KR101439797B1 (ko) 2011-07-05 2011-12-05 코발트(Ｃｏ)의 화학적 기계적 연마용 슬러리

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN201110186116A CN102304327A (zh) 2011-07-05 2011-07-05 一种基于金属Co的抛光工艺的抛光液
CN201110186116.5 2011-07-05
CN201110372757.XA CN102516875B (zh) 2011-07-05 2011-11-22 一种基于金属Co的抛光工艺的抛光液及其应用
CN201110372757.X 2011-11-22

Publications (2)

Publication Number Publication Date
WO2013003991A1 WO2013003991A1 (zh) 2013-01-10
WO2013003991A8 true WO2013003991A8 (zh) 2013-04-04

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PCT/CN2011/002027 WO2013003991A1 (zh) 2011-07-05 2011-12-05 一种基于金属co的抛光工艺的抛光液及其应用

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Country Link
US (1) US20130140273A1 (zh)
EP (1) EP2592122A4 (zh)
JP (1) JP2014509064A (zh)
KR (1) KR101439797B1 (zh)
CN (2) CN102304327A (zh)
WO (1) WO2013003991A1 (zh)

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Also Published As

Publication number Publication date
EP2592122A4 (en) 2014-01-22
CN102516875A (zh) 2012-06-27
JP2014509064A (ja) 2014-04-10
US20130140273A1 (en) 2013-06-06
CN102304327A (zh) 2012-01-04
EP2592122A1 (en) 2013-05-15
KR20130132389A (ko) 2013-12-04
WO2013003991A1 (zh) 2013-01-10
CN102516875B (zh) 2014-01-08
KR101439797B1 (ko) 2014-09-11

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