WO2013001991A1 - Dispositif de détection d'image radiologique et appareil de capture d'image radiologique - Google Patents

Dispositif de détection d'image radiologique et appareil de capture d'image radiologique Download PDF

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Publication number
WO2013001991A1
WO2013001991A1 PCT/JP2012/064439 JP2012064439W WO2013001991A1 WO 2013001991 A1 WO2013001991 A1 WO 2013001991A1 JP 2012064439 W JP2012064439 W JP 2012064439W WO 2013001991 A1 WO2013001991 A1 WO 2013001991A1
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WIPO (PCT)
Prior art keywords
image
imaging
sensor panel
organic
pixel
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PCT/JP2012/064439
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English (en)
Japanese (ja)
Inventor
大田　恭義
西納　直行
中津川　晴康
岩切　直人
保文 高橋
Original Assignee
富士フイルム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from JP2011144282A external-priority patent/JP2014178116A/ja
Priority claimed from JP2011159933A external-priority patent/JP2014179356A/ja
Priority claimed from JP2011165631A external-priority patent/JP2014179664A/ja
Application filed by 富士フイルム株式会社 filed Critical 富士フイルム株式会社
Publication of WO2013001991A1 publication Critical patent/WO2013001991A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B42/00—Obtaining records using waves other than optical waves; Visualisation of such records by using optical means
    • G03B42/02—Obtaining records using waves other than optical waves; Visualisation of such records by using optical means using X-rays
    • G03B42/04—Holders for X-ray films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Definitions

  • the present invention relates to a radiological image detection apparatus that electrically detects a radiographic image, and a radiographic imaging apparatus using the same.
  • the X-ray imaging system includes an X-ray generation apparatus that generates X-rays and an X-ray imaging apparatus that captures an X-ray image formed by X-rays transmitted through a subject (human body).
  • the X-ray generator includes an X-ray source that irradiates X-rays toward a subject, a control device that controls driving of the X-ray source, and an irradiation switch for inputting an X-ray irradiation start instruction.
  • An X-ray imaging apparatus is an X-ray image detection apparatus that detects an X-ray image by converting X-rays that have passed through each part of a subject into an electrical signal, and controls that drive the X-ray image detection apparatus and perform image processing.
  • the apparatus has a console for storing and displaying X-ray images.
  • the FPD includes a sensor panel in which pixels that accumulate signal charges according to the amount of incident X-rays are arranged in a matrix, and a signal processing circuit. In the signal processing circuit, the signal charge accumulated in each pixel is read and converted into a voltage signal to be output as X-ray image data.
  • Electronic cassettes that incorporate an FPD in a flat box-shaped housing have also been put into practical use.
  • the electronic cassette is used by being attached to an existing photographing stand for a film cassette, an IP cassette, or a CR cassette.
  • it is used by placing it on a bed or holding it on the subject itself in order to photograph a part that is difficult to photograph with the stationary type.
  • it may be used outside hospitals where there is no equipment for taking pictures of elderly people who are being treated at home or those who are suddenly ill due to accidents or disasters.
  • the FPD sensor panel includes a TFT type based on amorphous silicon and a CMOS type based on single crystal silicon. Since the CMOS type sensor panel is based on single crystal silicon, the mobility of electrons is high. Therefore, it can be driven at a higher speed than a TFT type sensor panel, and the frame rate can be increased, which is particularly suitable for moving image shooting. In addition, since the on-resistance of the CMOS sensor panel is small, the pixel aperture ratio can be increased compared with the TFT-type sensor panel, which has a large on-resistance and a large TFT, and thus has a higher image definition. This is also advantageous.
  • Patent Document 1 discloses an X-ray image detection apparatus which creates a CMOS sensor panel by taking a single piece from an 8-inch silicon wafer, and configures a composite sensor panel in which a plurality of these are combined to increase the area. Is described.
  • the composite sensor panel has a configuration in which vertical and horizontal shift registers (vertical and horizontal scanning circuits) are provided in an effective pixel region (imaging region).
  • Patent Document 1 vertical scanning of a CMOS sensor panel taken from an 8-inch silicon wafer is covered by a single vertical scanning circuit.
  • the CMOS type sensor panel also forms a vertical scanning circuit on the silicon wafer together with the imaging region, vertical scanning is performed as compared with the TFT type in which a vertical scanning circuit having a relatively large output is provided separately from the substrate on which the imaging region is formed.
  • the power of the circuit is weak and the transmission delay and attenuation of the vertical scanning signal applied to the row selection line for reading the imaging signal from the pixels in a certain row are likely to occur. The longer the row selection line is, the more prominent the transmission delay and attenuation of the vertical scanning signal.
  • Patent Document 1 in which vertical scanning of a CMOS type sensor panel taken from an 8-inch silicon wafer is covered by a single vertical scanning circuit, it is obvious that there is a high possibility that transmission delay and attenuation of the vertical scanning signal will occur. It is. Nevertheless, Patent Document 1 does not take measures to prevent transmission delay and attenuation of the vertical scanning signal. In order to further increase the area, for example, when a 12-inch silicon wafer is used, this problem increases as the area increases.
  • An object of the present invention is to provide a radiological image detection apparatus and a radiographic imaging apparatus capable of suppressing transmission delay and attenuation of a vertical scanning signal from a vertical scanning circuit due to an increase in area of a CMOS type sensor panel.
  • a radiographic imaging apparatus of the present invention includes a radiographic image detection apparatus and an imaging control apparatus that controls the operation of the radiographic image detection apparatus in an integrated manner.
  • the radiation image detection apparatus includes a CMOS type sensor panel formed from one silicon wafer and a scintillator.
  • the CMOS type sensor panel is arranged on one side of an imaging region in which pixels are arranged so as to form a plurality of rows and columns and two sides along the vertical scanning direction of the imaging region.
  • a plurality of rectangular blocks composed of a vertical scanning circuit for generating a vertical scanning signal in units of rows are connected in the row direction.
  • the scintillator is disposed so as to face the entire surface of the CMOS sensor panel, converts the radiation transmitted through the subject into visible light, and enters the imaging region.
  • the rectangular block is provided such that its long side is parallel to the pixel row (Y direction) of the CMOS type sensor panel.
  • Dv / Dpa representing the occupation ratio of the vertical scanning circuit with respect to the pixel pitch Dpa is 0.5 or less, where Dpa is the pixel pitch and Dv is the width of the vertical scanning circuit.
  • a CMOS type sensor panel is created by performing multiple exposures while sequentially moving the stepper in the row direction of the block.
  • Each rectangular block has a correlated double sampling circuit that holds the imaging signal output from the pixel and removes noise, a column selection transistor for selecting a pixel column that outputs the imaging signal, and a column selection transistor
  • a horizontal scanning circuit that outputs a horizontal scanning signal and an output circuit that amplifies the imaging signal with a predetermined amplification factor, A / D converts it, and outputs it to the outside are provided in common.
  • these circuits may be provided for each rectangular block.
  • a plurality of CMOS type sensor panels may be connected to form a composite sensor panel, and an organic imaging device and an image processing unit may be provided.
  • the composite sensor panel photoelectrically converts visible light from the scintillator to detect a first radiation image of the subject.
  • the organic imaging element includes an organic photoelectric conversion film that photoelectrically converts visible light from the scintillator, and includes at least a dead area corresponding image that is missing from the first radiation image due to a dead area that is a joint portion of the composite sensor panel.
  • a second radiation image is detected.
  • the image processing unit creates a composite image of the first radiation image and the second radiation image so that the insensitive area corresponding image is fitted in the first radiation image.
  • the organic imaging element is provided with an organic imaging area in a portion corresponding to the insensitive area of the composite sensor panel.
  • the organic imaging device may be provided with an organic imaging region in a portion corresponding to the insensitive region of the composite sensor panel and a portion corresponding to the imaging region.
  • at least one organic pixel existing in a part of the organic imaging region and corresponding to the imaging region of the composite sensor panel is used as the radiation detection sensor.
  • the operations of the composite sensor panel and the organic imaging device may be controlled based on the output of the organic pixel.
  • an image recognition unit that recognizes an image of a subject reflected in the first radiation image and the second radiation image.
  • the image processing unit creates a composite image based on the recognition result of the image recognition unit so that the first radiation image and the second radiation image match.
  • a marker made of a material that absorbs X-rays is arranged in the unexposed portion of the imaging area of the composite sensor panel and the organic imaging area of the organic imaging element, and the first radiation image is based on the image recognition result of the marker image. May be aligned with the second radiation image.
  • the image processing unit is provided in the imaging control device.
  • the organic imaging element may be disposed on the surface on which the radiation of the scintillator is incident, or may be disposed on the surface of the composite sensor panel on which the visible light from the scintillator is incident.
  • the organic photoelectric conversion film preferably has an absorption peak wavelength in a wavelength band that deviates from the emission peak wavelength of the scintillator.
  • the radiological image detection apparatus of the present invention has a CMOS type sensor panel formed from one silicon wafer and a scintillator.
  • the CMOS type sensor panel is arranged on one side of an imaging region in which pixels are arranged so as to form a plurality of rows and columns and two sides along the vertical scanning direction of the imaging region.
  • a plurality of rectangular blocks composed of a vertical scanning circuit for generating a vertical scanning signal in units of rows are connected in the row direction.
  • the scintillator is disposed so as to face the entire surface of the CMOS sensor panel, converts the radiation transmitted through the subject into visible light, and enters the imaging region.
  • a casing that houses the scintillator and the CMOS sensor panel and constitutes a portable electronic cassette.
  • a CMOS type sensor panel formed from a single silicon wafer is composed of a plurality of rectangular blocks including an imaging region and a vertical scanning circuit. The accompanying transmission delay and attenuation of the vertical scanning signal from the vertical scanning circuit can be suppressed.
  • FIG. 1 is a schematic diagram showing an X-ray imaging system. It is a perspective view which shows an electronic cassette. It is sectional drawing of the electronic cassette which accommodated the X-ray image detector of 1st Embodiment. It is a disassembled perspective view which shows the X-ray image detector of 1st Embodiment. It is a block diagram which shows the electric constitution of a X-ray imaging system. It is explanatory drawing which shows typically the process which synthesize
  • FIG. It is a block diagram which shows the X-ray image imaging system using the X-ray image detector shown in FIG. It is a block diagram which shows the X-ray-image imaging system which provided the image recognition part in the imaging
  • an X-ray imaging system 2 includes an X-ray source 13 and an electronic cassette 14 installed in an imaging room of a hospital, an imaging control device 11 installed in a small room next to the imaging room, and a console 12 ( Both of them are equipped with a camera as shown in FIG.
  • the electronic cassette 14, the imaging control device 11, and the console 12 constitute an X-ray imaging device.
  • the X-ray source 13 includes an X-ray tube 15 that generates X-rays toward a subject (human body), and an irradiation field limiter (collimator) 16 that restricts the X-ray irradiation field generated by the X-ray tube 15 to a rectangular shape.
  • a subject human body
  • an irradiation field limiter (collimator) 16 that restricts the X-ray irradiation field generated by the X-ray tube 15 to a rectangular shape.
  • the X-ray tube 15 includes a cathode that is a filament that emits thermoelectrons, and an anode (target) that emits X-rays when the thermoelectrons emitted from the cathode collide.
  • the target has a disk shape, and is a rotating anode in which the focal point moves on a circular orbit by rotation, and the heat generated at the focal point where thermal electrons collide is dispersed.
  • the irradiation field limiter 16 has four lead plates that shield X-rays arranged on each side of a square, and an irradiation opening that transmits X-rays is formed in the center, and the position of the lead plate is moved. Thus, the size of the rectangular irradiation opening is changed to limit the irradiation field.
  • the X-ray source 13 is attached to the lower end of a support column 17 that expands and contracts in the vertical axis direction so as to be rotatable about the vertical axis and the horizontal axis.
  • the support column 17 is attached to a moving mechanism (not shown) attached to the ceiling.
  • the moving mechanism is movable in a two-dimensional direction along the ceiling surface.
  • the X-ray source 13 can be set at a desired position and orientation by the moving mechanism and the support column 17.
  • the electronic cassette 14 receives X-rays irradiated from the X-ray source 13 and transmitted through the subject, and outputs an X-ray image.
  • the electronic cassette 14 has a substantially rectangular shape and a flat shape, and the plane size is substantially the same size as a film cassette, an IP cassette, or a CR cassette (a size based on the international standard ISO 4090: 2001).
  • the electronic cassette 14 is attached to and detached from the holders 19a and 19b of the standing imaging table 18a and the standing imaging table 18b so that the imaging region 44 (see FIGS. 3 and 4) is held in a posture facing the X-ray source 13. Set freely. Then, the X-ray source 13 is moved according to the imaging table to be used. Further, the electronic cassette 14 may be used alone as it is placed on the bed on which the subject lies, or held by the subject itself, in addition to being set on the upright photographing stand 18a or the supine photographing stand 18b. . Since the electronic cassette 14 is substantially the same size as the film cassette, the IP cassette, and the CR cassette, the electronic cassette 14 can be attached to an existing photographing stand for the film cassette, the IP cassette, and the CR cassette.
  • the electronic cassette 14 includes an antenna 30 and a battery (secondary battery) 31, and wireless communication with the imaging control device 11 is possible.
  • the battery 31 supplies power of a predetermined voltage to each part of the electronic cassette 14.
  • a relatively small battery 31 is used so as to fit in the thin electronic cassette 14.
  • the battery 31 can be taken out by opening the lid 32 provided on one side surface of the electronic cassette 14, and can be taken out from the electronic cassette 14 and set in a dedicated cradle for charging.
  • the antenna 30 transmits and receives radio waves to and from the imaging control device 11.
  • the electronic cassette 14 is provided with a socket 33.
  • the socket 33 is disposed on the side surface opposite to the lid 32.
  • a connector 35 of a composite cable 34 connected to the photographing control device 11 is inserted into the socket 33.
  • the composite cable 34 is used when wireless communication between the electronic cassette 14 and the imaging control device 11 becomes impossible due to a shortage of the remaining battery 31 or the like.
  • the connector 35 is inserted into the socket 33 and the composite cable 34 is used, wired communication with the imaging control device 11 is possible and power can be supplied from the imaging control device 11 to the electronic cassette 14.
  • the electronic cassette 14 includes an X-ray image detector 40.
  • the X-ray image detector 40 has a composite sensor panel 41.
  • the composite sensor panel 41 is obtained by connecting (tiling) a plurality of (four in this example) CMOS sensor panels 42 having the same shape and size.
  • Each CMOS sensor panel 42 includes an imaging region 44 in which a plurality of pixels 43 that accumulate signal charges according to the amount of incident light are arranged.
  • the plurality of pixels 43 are two-dimensionally arranged in a matrix of n rows ⁇ m columns at a predetermined pitch.
  • Each pixel 43 photoelectrically converts visible light converted from X-rays and accumulates the obtained signal charges.
  • the signal charge of each pixel 43 is read out in time series as an imaging signal.
  • each CMOS sensor panel 42 more precisely, between the two imaging regions 44 is formed into a cross shape by four CMOS sensor panels 42, and no pixel 43 is formed in this portion.
  • the insensitive region 45 is insensitive even when irradiated with light.
  • the width of the dead area 45 is the same as the width of one pixel 43.
  • An AEC (Automatic Exposure Control) sensor 51 and an irradiation detection sensor 52 are attached to a space 42a around the CMOS sensor panel 42. Each of these sensors 51 and 52 outputs an electrical signal corresponding to the amount of incident light to the imaging control device 11 (see FIG. 5).
  • the X-ray image detector 40 is an indirect conversion type that once converts X-rays into visible light, and a scintillator (phosphor) 46 that converts X-rays into visible light is provided on the composite sensor panel 41.
  • the scintillator 46 is made of a fluorescent material such as CsI (cesium iodide) or GOS (gadolinium oxysulfide).
  • CsI cesium iodide
  • GOS gallium oxysulfide
  • CsI (Tl) having an emission spectrum of 420 nm to 700 nm and an emission peak wavelength of 565 nm is used, and is arranged so as to face the entire surface of the composite sensor panel 41.
  • the X-ray image detector 40 further has an organic imaging element 47 formed on the vapor deposition surface 49a of the substrate 49 of the scintillator 46.
  • the organic imaging element 47 has an organic imaging area 48, and the organic imaging area 48 corresponds to the dead area 45 of the composite sensor panel 41.
  • an organic photoelectric conversion film (OPC) is sandwiched between a pair of electrodes, an electron or hole blocking film is interposed between the organic photoelectric conversion film and both electrodes, and signal charges are externally transmitted.
  • OPC organic photoelectric conversion film
  • the deposition surface 49a of the substrate 49 other than the organic imaging region 48 corresponds to the imaging region 44 of each CMOS type sensor panel 42, and a reflective film such as an aluminum thin film is formed.
  • the substrate 49 is made of a material that transmits X-rays, such as polyimide (PI), polyethylene naphthalate (PEN), or the like so as not to prevent the X-rays from entering the scintillator 46.
  • the organic imaging element 47 is formed on the vapor deposition surface 49a through a process such as forming an electrode on the vapor deposition surface 49a and applying an organic photoelectric conversion film on the electrode.
  • the absorption peak wavelength is preferably close to the emission peak wavelength of the scintillator 46.
  • a quinacridone organic compound or a phthalocyanine organic compound is used.
  • the absorption peak wavelength of quinacridone is 560 nm
  • CsI (Tl) having an emission peak wavelength of 565 nm is used for the scintillator 46
  • the difference between the respective peak wavelengths should be within 5 nm.
  • most of the light from the scintillator 46 can be converted into signal charges.
  • the housing 60 includes a box-shaped main body 61 that houses the X-ray image detector 40 including the composite sensor panel 41, the scintillator 46, the organic imaging element 47, and the like, and a front cover 62 that covers the front side that emits X-rays. Prepare.
  • the main body 61 and the front cover 62 are made of conductive resin.
  • a rectangular opening is formed in the front cover 62, and a transmission plate 63 is attached to the opening as a top plate.
  • the transmission plate 63 is made of a carbon material that is lightweight, has high rigidity, and has high X-ray permeability.
  • the housing 60 functions as an electromagnetic shield that prevents electromagnetic noise from entering the electronic cassette 14 and radiating electromagnetic noise from the electronic cassette 14 to the outside.
  • a base plate 64 and a plurality of circuit boards 65 are sequentially arranged on the back side of the X-ray image detector 40.
  • the base plate 64 is made of, for example, stainless steel, and the composite sensor panel 41 is attached to the front side, and the circuit board 65 is attached to the back side.
  • the X-ray image detector 40 includes a composite sensor panel 41, an organic imaging device 47, and signal processing circuits 66a and 66b.
  • the signal processing circuits 66a and 66b are for the composite sensor panel 41 and the organic imaging device 47, and are provided on the circuit boards 65a and 65b shown in FIG.
  • each of the signal processing circuits 66a and 66b drives a pixel 43 and a pixel 50 to control reading of signal charges, and converts signal charges read from the pixels 43 and 50 into digital data.
  • An A / D converter that converts and outputs, a control circuit that controls these operations, and the like are provided.
  • the circuit boards 65a and 65b are respectively connected to the composite sensor panel 41 and the organic imaging element 47 by a flexible cable or the like (not shown).
  • the X-ray source control unit 70 of the imaging control apparatus 11 controls a tube voltage that determines an energy spectrum of X-rays irradiated by the X-ray source 13 via a driver 71 and a tube current that determines an irradiation amount per unit time.
  • the X-ray tube 18 is operated under the designated imaging conditions and operation timing. Imaging conditions such as tube voltage, tube current, or subject's sex, age, body shape, and imaging region are set by a radiographer through the operation panel of the imaging control device 11.
  • the driver 71 boosts the input voltage with a transformer to generate a high voltage tube voltage, and supplies driving power to the X-ray source 13 through a high voltage cable.
  • the cassette control unit 72 comprehensively controls the operation of each unit of the electronic cassette 14.
  • the cassette control unit 72 controls the operations of the composite sensor panel 41 and the organic imaging device 47 via the drivers 73a and 73b, respectively, and operates them at designated operation timings.
  • the cassette control unit 72 controls the operation of the electronic cassette 11 synchronously when it is detected from the output of the irradiation detection sensor 52 that X-ray irradiation from the X-ray source 13 has started.
  • the cassette control unit 72 starts an operation of accumulating signal charges in the composite sensor panel 41 and the organic imaging device 47 via the drivers 73a and 73b.
  • the signal charge reading operation is started.
  • the X-ray irradiation time varies depending on the imaging conditions. However, in the case of still image shooting, the maximum X-ray irradiation time is often set in the range of about 500 msec to about 2 s. Is set with this maximum irradiation time as the upper limit.
  • the electronic cassette 14 may be activated when the irradiation switch 74 is operated to generate an irradiation start signal. In this case, the irradiation detection sensor 52 is not necessary.
  • the AEC control unit 76 stops the X-ray irradiation based on the X-ray dose measured by the AEC sensor 51.
  • the AEC control unit 76 automatically sets the target value of the transmitted X-ray dose (X dose transmitted through the subject and irradiated to the X-ray image detector 40) adapted to the imaging conditions such as the subject's sex, age, body type, and imaging region. Calculate automatically.
  • the target value of the transmitted X-ray dose may be selected by an engineer based on the subject's sex, age, body type, imaging region, and the like, and the selected value may be set in the AEC control unit 76.
  • the AEC control unit 76 starts monitoring the output of the AEC sensor 51 when the cassette control unit 72 detects the start of X-ray irradiation based on the signal from the irradiation detection sensor 52. Then, the measured value of the transmitted X-ray dose based on the output of the AEC sensor 51 is compared with the target value of the transmitted X-ray dose calculated from the imaging conditions. Subsequently, when X-rays are irradiated from the X-ray source 13 and the measured value of the transmitted X-ray dose reaches the target value, the AEC control unit 76 transmits an X-ray irradiation stop signal to the X-ray source control unit 70.
  • the X-ray source control unit 70 controls the driving of the driver 71 according to the irradiation stop signal, and stops the X-ray irradiation. Further, the cassette control unit 72 causes the composite sensor panel 41 and the organic imaging device 47 to start a reading operation in response to the irradiation stop signal.
  • the image processing unit 75 receives data of two images Gc (first radiation image) and Go (second radiation image) obtained by the composite sensor panel 41 and the organic imaging device 47 from the signal processing circuits 66a and 66b. Various image processing is performed. As schematically shown in FIG. 6, the image Gc includes a dead area image 80 corresponding to the dead area 45 of the composite sensor panel 41. The dead area image 80 is a cross-shaped streak having no image information. On the other hand, the image Go of the organic imaging element 47 includes a dead area corresponding image corresponding to the dead area 45 of the composite sensor panel 41. The image processing unit 75 synthesizes the image Go of the organic imaging element 47 with the image Gc of the composite sensor panel 41 to create a composite image G. In this image composition, a dead area corresponding image having a cross shape, which is the image Go, is inserted into the dead area image 80 of the image Gc.
  • the image processing unit 75 combines the images Gc and Go after correcting the pixel value of the image Go to the pixel value of the image Gc.
  • the conversion formula is obtained in advance based on the difference in performance between the composite sensor panel 41 and the organic imaging element 47 and stored in the memory or the like of the image processing unit 75.
  • the console 12 transmits imaging conditions to the imaging control device 11 and performs various image processing such as offset correction and gain correction on the X-ray image data transmitted from the imaging control device 11.
  • the processed X-ray image is displayed on the display of the console 12, and the data is stored in a data storage device such as a hard disk or memory in the console 12 or an image storage server connected to the console 12 via a network.
  • the console 12 receives an input of an examination order including information such as a patient's sex, age, imaging region, imaging purpose, and displays the examination order on the display.
  • the examination order is input from an external system that manages patient information such as HIS (Hospital Information System) and RIS (Radiation Information System) and examination information related to radiation examination, or manually input by a radiographer.
  • HIS Hospital Information System
  • RIS Ration Information System
  • the imaging table 18 in either the standing position or the prone position is selected according to the imaging region, and the electronic cassette 14 is set on the imaging table 18.
  • the height of the electronic cassette 14 is adjusted in accordance with the subject, and the position of the subject to be imaged is aligned.
  • the height of the X-ray source 13 and the size of the irradiation field are adjusted according to the height of the electronic cassette 14 and the size of the imaging region.
  • the power of the electronic cassette 14 is turned on. Further, shooting conditions are input to the console 12, and shooting conditions are also set in the shooting control device 11.
  • the radiation switch 74 When the preparation for imaging is completed, the radiation switch 74 is pushed by the radiologist, an irradiation start signal is transmitted, and X-ray irradiation is started. Further, when the X-ray irradiation start is detected by the irradiation detection sensor 52, the composite sensor panel 41 and the organic imaging element 47 execute an accumulation operation under the control of the cassette control unit 72. When receiving the irradiation stop signal from the AEC control unit 76, the X-ray source control unit 70 stops the X-ray irradiation. In addition, the composite sensor panel 41 and the organic imaging element 47 also end the accumulation operation and shift to the reading operation. In the read operation, the signal charges accumulated in each pixel 43 and each pixel 50 are read out and subjected to various signal processing in the signal processing circuits 66a and 66b to generate images Gc and Go.
  • the data of the images Gc and Go are transmitted from the signal processing circuits 66a and 66b to the image processing unit 75.
  • the images Gc and Go are combined, and the insensitive area image 80 of the composite sensor panel 41 of the image Gc is interpolated with the image Go (a cross-shaped insensitive area corresponding image).
  • the data of the synthesized image G obtained in this way is subjected to various image processing such as offset correction and gain correction at the console 12 and then displayed on the display of the console 12 or stored in the data storage device.
  • the organic imaging region 48 of the organic imaging device 47 is arranged at a position corresponding to the dead region 45 that is a joint of the composite sensor panel 41, and the organic imaging region Since the insensitive area image 80 is interpolated with the image Go obtained with the 48 pixels 50, a better image suitable for diagnosis than when the image lacks a cross shape or is filled with interpolation by surrounding pixels. Can be presented.
  • the organic image pickup element 47 Since the organic image pickup element 47 has a simple structure and is easy to manufacture, the organic image pickup element 47 can be formed in a shape (cross shape in this example) imitating the insensitive area 45 of the composite sensor panel 41 relatively easily. In addition, since the organic imaging element 47 is thin, the thickness of the electronic cassette 14 does not change even if it is stacked.
  • the organic imaging element is formed only in the portion corresponding to the insensitive area of the sensor panel.
  • An organic imaging element 86 may be used.
  • a reflective film such as an aluminum thin film is formed on the vapor deposition surface 49 a of the substrate 49 in a portion other than the organic imaging region 48, but the organic imaging element 86 is reflective because the entire surface is the organic imaging region 87. A film is not formed.
  • the image information of the pixel 50 in the portion corresponding to the dead area 45 in the organic image sensor 86 is used for interpolation of the portion corresponding to the dead area 45.
  • the pixel 50 of the organic imaging element 86 other than the dead area 45 has two usage examples described below.
  • the pixel 50 corresponding to the imaging region 44 of the composite sensor panel 41 in the organic imaging device 86 is used as an AEC sensor.
  • the pixel 50 in the central portion of the organic imaging region 87 which is likely to be a region of interest when the subject faces at the time of photographing, or in the central portion of a plurality of sections obtained by equally dividing the organic imaging region 87, is used as the AEC sensor.
  • An integration amplifier that integrates the signal charges generated in these pixels 50 and converts them into a voltage output is provided, and the voltage output is monitored at regular time intervals.
  • an AEC control unit 91 that stops X-ray irradiation based on the output of the pixel 50 as an AEC sensor is provided as in the imaging control device 90 shown in FIG.
  • the irradiation time is not set as an imaging condition.
  • conditions such as the subject's sex, age, body type, and imaging region are input from the console 12, and the target value of the transmitted X-ray dose adapted to the input imaging conditions is AEC controlled. This is automatically calculated by the unit 91.
  • Reference numeral 92 denotes an electronic cassette equipped with an X-ray image detector 85
  • reference numeral 93b denotes a signal processing circuit provided with an integrating amplifier.
  • the AEC control unit 91 starts monitoring the voltage output of the integrating amplifier when the irradiation switch 74 is operated and an irradiation start signal is issued. Then, the measured value of the transmitted X-ray dose based on the voltage output of the integrating amplifier is compared with the target value of the transmitted X-ray dose calculated from the imaging conditions. When the measured value of the transmitted X-ray dose reaches the target value, the AEC control unit 91 transmits an irradiation stop signal to the X-ray source control unit 70.
  • the X-ray source control unit 70 controls the driving of the driver 71 according to the irradiation stop signal, stops the power supply to the X-ray tube 15 and stops the X-ray irradiation.
  • the pixel 50 used as the AEC sensor may be selected according to the imaging conditions and the measurement result of the voltage output of the integrating amplifier.
  • the pixel 50 corresponding to the imaging region 44 of the composite sensor panel 41 may be used as an irradiation detection sensor. Also in this case, as in the case of substituting as the AEC sensor described above, the measured value of the transmitted X-ray dose from the pixel 50 is compared with a preset threshold value, and when the measured value exceeds the threshold value, X-ray irradiation is started. Judge that Similarly, the pixel 50 may detect not only the start of X-ray irradiation but also the end.
  • the image Go ′ is used for alignment with the image Gc in order to accurately cut out the insensitive area corresponding image Go from the image Go ′ obtained by the organic imaging element 86.
  • the organic imaging region 48 has a cross shape.
  • the organic imaging region 48 is complex so that the organic imaging region 48 accurately matches the dead region 45 of the composite sensor panel 41 without being displaced. It is difficult to arrange the sensor panel 41 and the organic imaging element 47 so as to overlap each other. The composite sensor panel 41 and the organic imaging region 47 overlap with each other through the scintillator 46.
  • X-rays are irradiated obliquely, a positional shift occurs between the image Gc and the image Go. become.
  • the image recognition unit 101 performs pattern matching between the image Go ′ of the organic imaging element 86 whose entire surface is the organic imaging region 87 and the image Gc of the composite sensor panel 41. Overlay (positioning) is performed by processing.
  • the image Gc includes a cross-shaped insensitive area image 80.
  • the dead area corresponding image Go corresponding to the dead area image 80 can be accurately cut out from the image Go ′.
  • the cut-out dead area corresponding image Go is combined with the image Gc to create a combined image G.
  • the organic image pickup device 86 can be easily attached, and the image can be correctly combined even if the image is misaligned.
  • a marker made of a material that absorbs X-rays is arranged in the unexposed portion of the imaging region 44 of the composite sensor panel 41 and the organic imaging region 87 of the organic imaging element 86, and the image Gc and the image of the marker are matched.
  • the image Go ′ may be superimposed.
  • the AEC control unit 91 and the signal processing circuit 93b of the first usage example are provided so that both the first and second usage examples can be implemented.
  • each example may be implemented individually.
  • the organic imaging region may be a size sufficient to calculate the shift amount between the images Gc and Go ′, for example, about half of the imaging region 44 of the composite sensor panel 41. Accordingly, the entire surface of the organic imaging element does not have to be an organic imaging region, so that the cost is low.
  • the area necessary for diagnosis is often the central part, only the central part is set as the organic imaging area, and the edge part is left as the insensitive area image.
  • an organic imaging element is comprised from the material which X-ray permeate
  • CMOS sensor panels 42 constituting the composite sensor panel 41 are not limited to the example shown in the first embodiment.
  • an organic photoelectric conversion film that is sensitive to visible light from the scintillator 46 is used.
  • the organic photoelectric conversion film is formed of a material that is sensitive to X-rays, and X-rays incident from the transmission plate 63 are generated. It may be converted directly into electric charge.
  • the organic imaging element, the scintillator, and the composite sensor panel are arranged in this order as seen from the incident direction of the X-ray.
  • the organic imaging element 47 may be formed on the composite sensor panel 41 so as to be between the scintillator 46 and the composite sensor panel 41.
  • the organic imaging element 47 is provided only in the insensitive area 45 of the composite sensor panel 41, but may be provided on the entire surface of the composite sensor panel 41.
  • the emission peak wavelength of the scintillator 46 is opposite to that in the first embodiment so that visible light from the scintillator 46 incident on the composite sensor panel 41 is not dimmed due to the organic image sensor. It is preferable to use an organic photoelectric conversion film having an absorption peak wavelength in a wavelength band deviating from the above.
  • CsI (Tl) having an emission peak wavelength of 565 nm is used for the scintillator 46
  • a p-type material layer containing rubrene and an n-type material layer containing fullerene or higher-order fullerene described in JP-A-2009-218599 are used.
  • An organic photoelectric conversion film having an absorption peak wavelength near 400 nm in the blue wavelength band is used. Note that when an organic imaging device is formed on a composite sensor panel, the pixels of the organic imaging device are used as an AEC sensor or an irradiation detection sensor, or the output of the organic imaging device is used as a position between images, as in the first embodiment. You may use it together.
  • the X-ray image detector 116 of the electronic cassette 115 of the present embodiment has a large CMOS sensor panel 117.
  • the CMOS type sensor panel 117 has a square shape and is composed of a plurality (ten in this example) of rectangular blocks 118. Each block 118 is provided such that its long side is parallel to the column of pixels 121 (see FIG. 14 and the like) of the CMOS type sensor panel 117.
  • the X-ray image detector 116 is provided with a scintillator (phosphor) 46 on a CMOS sensor panel 117, and photoelectrically converts the visible light converted by the scintillator 46 at the pixel 121 of the CMOS sensor panel 117.
  • the X-ray image detector 116 is covered with a housing 60. 11 and 12, the substrate of the scintillator 46 is omitted (the same applies to FIG. 17).
  • the CMOS type sensor panel 117 is formed from a single 12 inch silicon wafer ( ⁇ 8 mm) 120 having a diameter of 300 mm by a CMOS process.
  • the width of one block 118 is the same as the width that can be exposed at one time by a stepper (exposure device).
  • the CMOS type sensor panel 117 is created by performing multiple exposures while sequentially moving the stepper in the X direction by the width of the block 118.
  • each block 118 includes an imaging region 122 in which a plurality of pixels 121 that accumulate signal charges corresponding to the amount of incident light are arranged.
  • a vertical scanning circuit 123 is formed on the side of the imaging region 122 of each block 118 (one of the two sides along the vertical scanning direction (Y direction)) that performs the readout operation of the imaging signal for each block 118.
  • One block 118 includes a pair of an imaging region 122 and a vertical scanning circuit 123 on the side thereof.
  • a portion 124 is formed. Unlike the vertical scanning circuit 123 provided for each block 118, the circuit unit 124 is used in common for each block 118.
  • the pixel 121b adjacent to the vertical scanning circuit 123 of each block 118 has a width Dpb slightly smaller than the width Dpa (the pitch of the pixels 121) of the pixel 121a that is not adjacent to the vertical scanning circuit 123. It is narrowly formed. Therefore, the pixel 121a has a square shape, but the pixel 121b has a rectangular shape.
  • the width Dpa of the pixel 121a is 160 ⁇ m
  • the width Dpb of the pixel 121b is 140 ⁇ m
  • the width Dv of the vertical scanning circuit 123 is 20 ⁇ m. If the pitch of the pixels 121 is reduced, the number of pixels can be increased and the resolution can be increased. However, the width of the pixels 121b is further narrowed with respect to the width of the vertical scanning circuit 123. Therefore, in order to sufficiently secure the sensitivity of the pixel 121b with respect to visible light from the scintillator 46, it is preferable that the occupation ratio Dv / Dpa of the vertical scanning circuit 123 with respect to the pixel pitch Dpa is 0.5 (50%) or less.
  • the CMOS sensor panel 117 can be easily increased in sensitivity as compared with the TFT type, and sensitivity correction is also performed in the pixel 121b in which the area (light receiving area) of the photoelectric conversion unit is smaller than that of the pixel 121a due to the vertical scanning circuit 123. By doing so, it is possible to ensure sufficient sensitivity. Since the vertical scanning circuit 123 can be miniaturized down to 20 ⁇ m as exemplified, it is sufficient that Dpa ⁇ 40 ⁇ m.
  • each pixel 121 includes a photodiode PD, an amplifying transistor M1, a pixel selecting transistor M2, and a resetting transistor M3.
  • the photodiode PD generates and accumulates signal charges corresponding to the amount of incident light by photoelectric conversion.
  • the signal charge accumulated in the photodiode PD is amplified as an imaging signal by the amplifying transistor M1, and is output from the pixel 121 at a predetermined timing by the pixel selecting transistor M2. Further, the signal charge accumulated in the photodiode PD is discharged to the drain through the reset transistor M3 at a predetermined timing.
  • the pixel selecting transistor M2 and the resetting transistor M3 are N-channel transistors, which are turned on when a high level “1” is applied to the gate and turned off when a low level “0” is applied.
  • a row selection line GL and a row reset line RST are wired from the vertical scanning circuit 123 in the horizontal direction (X direction), and columns from the CDS circuit 130 in the vertical direction (Y direction).
  • a signal line SL is wired.
  • the row selection line GL is connected to the gate of the pixel selection transistor M2, and the row reset line RST is connected to the gate of the reset transistor M3.
  • the column signal line SL is connected to the source of the pixel selection transistor M2, and is connected to the column selection transistor 131 of the corresponding column via the CDS circuit 130.
  • the CDS circuit 130 holds the imaging signal of the pixel 121 connected to the row selection line GL selected by the vertical scanning circuit 123 based on a clock signal input from a timing generator (TG) (not shown), and removes noise. Do.
  • the horizontal scanning circuit 133 generates a horizontal scanning signal based on the clock signal input from the TG, and performs on / off control of the column selection transistor 131.
  • the column selection transistor 131 is provided between the output bus line 134 connected to the output circuit 132 and the CDS circuit 130, and selects a pixel for transferring an imaging signal to the output bus line 134 in accordance with a horizontal scanning signal. To do.
  • the output circuit 132 amplifies the imaging signal sequentially transferred from the CDS circuit 130 to the output bus line 134, performs A / D conversion, and outputs the amplified signal.
  • the circuit unit 124 and the output circuit 132 constitute a signal processing circuit.
  • the vertical scanning circuit 123 includes a vertical scanning shift register and a reset shift register.
  • the vertical scanning shift register generates a vertical scanning signal based on the clock signal input from the TG, selects the row selection line GL row by row, and outputs the imaging signal to the column signal line SL. Change the line.
  • the reset shift register selects the row reset line RST one row at a time, and changes the row of the pixels 121 that should discharge the signal charge to the drain via the reset transistor M3.
  • the vertical scanning circuit 123 of each block 118 simultaneously outputs a vertical scanning signal or a reset signal to the pixels 121 in a certain row. Therefore, the imaging signals are simultaneously output from the pixels 121 in the same row straddling each block 118 regardless of the block 118, and the reset is also performed at the same time.
  • the CMOS type sensor panel 117 is configured by a plurality of blocks 118, the width of the imaging region 122 in which the vertical scanning circuit 123 of each block 118 is responsible for the reading operation, compared to the case where the blocks 118 are not divided. Becomes narrower. For this reason, the wiring length of the row selection line GL can be shortened. In the case of ten blocks 118 as in this example, the wiring length becomes 1/10 compared to the case where one vertical scanning circuit covers the reading operation of the entire imaging region. Thereby, transmission delay and attenuation of the vertical scanning signal due to redundancy of the row selection line GL can be suppressed.
  • the operation speed of the CMOS sensor panel can be further increased, and the CMOS sensor panel can be used while fully utilizing the advantages of the CMOS sensor panel that is suitable for moving image shooting. Further, it is possible to easily increase the area of the imaging region simply by connecting a plurality of blocks. Suppressing the transmission delay and attenuation of the vertical scanning signal is indispensable for increasing the area of the imaging region, so that it is particularly effective when applied to X-ray imaging applications that require an increase in area. it can.
  • the CMOS type sensor panel 117 is created by performing multiple exposures while sequentially moving the stepper in the X direction by the width of the block 118, it is possible to save the trouble of rotating the stepper and changing the orientation. Is easy.
  • the CMOS sensor panel 117 having a large area can be formed without increasing the range that can be exposed by a single stepper.
  • the occupation ratio Dv / Dpa of the vertical scanning circuit 123 with respect to the pixel pitch Dpa is set to 0.5 (50%) or less, a decrease in sensitivity of the pixel 121b due to the provision of the vertical scanning circuit 123 can be suppressed.
  • the vertical scanning circuit 123 but also the circuit unit 124 and the output circuit 132 may be provided for each block 118 as in the CMOS type sensor panel 135 shown in FIG.
  • the block 118 in which defective pixels that affect image quality have occurred, the block 118 in which a defect has occurred in the vertical scanning circuit 123, etc. can be replaced with a normal block, and the yield of the CMOS type sensor panel can be improved. Can contribute.
  • the X-ray image detector 116 is composed of a single CMOS sensor panel 117 made from a 12-inch silicon wafer 120. However, as in the first embodiment, a plurality of CMOS sensor panels 117 are connected together (tie type). It may be possible to further increase the area. In this case, one CMOS sensor panel 117 corresponds to one CMOS sensor panel 42 of the first embodiment.
  • FIGS. 17 to 27 a third embodiment shown in FIGS. 17 to 27 will be described. Note that the same functions and configurations as those in the first and second embodiments are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the X-ray image detector 140 includes a scintillator 46 and a CMOS type sensor panel 150.
  • the CMOS sensor panel 150 includes a semiconductor substrate 141 such as a silicon substrate, a photoelectric conversion layer 144 formed thereon, and electrodes 145a and 145b provided above and below the photoelectric conversion layer 144.
  • signals are read from circuit elements 143 such as various transistors M1, M2, and M3 (switching elements), row selection lines GLa and GLb, and photodiodes PD for controlling the transistors M2 and M3.
  • circuit elements 143 such as various transistors M1, M2, and M3 (switching elements), row selection lines GLa and GLb, and photodiodes PD for controlling the transistors M2 and M3.
  • Various wirings such as a signal line SL for performing, circuits, and the like are formed.
  • the photodiode PD includes a photoelectric conversion layer 144, an upper electrode 145a, and a lower electrode
  • a photoelectric conversion layer 144 is provided on the semiconductor substrate 141 via a lower electrode 145b, and a scintillator 46 is provided on the photoelectric conversion layer 144 via a transparent upper electrode 145a.
  • the photoelectric conversion layer 144 photoelectrically converts visible light generated by the scintillator 46 according to the amount of incident X-rays, and generates signal charges.
  • the signal charge generated in the photoelectric conversion layer 144 is accumulated in the equivalently expressed capacitor 142.
  • the X-ray image detector 140 is a stacked type in which various transistors M1 to M3 (switching elements) and the like are provided on the back surface of the photoelectric conversion layer 144 that functions as the photodiode PD. Therefore, in the X-ray image detector 140, the aperture ratio of the photodiode PD is improved as compared with the planar type in which these circuits and the like are provided side by side with the photoelectric conversion layer 144.
  • a combination of one photodiode PD and a circuit element 143 such as transistors M1 to M3 that control the photodiode PD is a sub-pixel SP, and a plurality of sub-pixels SP (here, four of SP1, SP2, SP3, and SP4) are combined.
  • a pixel PX is configured. In the imaging region 146, the composite pixels PX are arranged in a matrix of n rows ⁇ m columns in two dimensions (on the XY plane) at a predetermined pitch.
  • Each of the subpixels SP1 to SP4 has the same size, and the size is, for example, 100 ⁇ m square.
  • the photoelectric conversion layer 144 constituting the scintillator 46 and the photodiode PD and the upper electrode 145a stacked on the photoelectric conversion layer 144 are not divided for each subpixel SP, and are provided in common to all the subpixels SP. .
  • a lower electrode 145b sandwiching the photoelectric conversion layer 144 between the upper electrode 145a is provided for each subpixel SP. Note that the scintillator 46 and the photoelectric conversion layer 144 may be divided for each sub-pixel SP.
  • one signal line SL, one row selection line GL, and one reset line RST are connected to one pixel 121.
  • two row selection lines GLa and GLb are connected. It is connected to one composite pixel PX.
  • the row selection line GLa is a main wiring
  • the row selection line GLb is a sub wiring.
  • the row selection line GLa that is the main wiring is disposed between the composite pixels PX, and is connected to the composite pixels PX in the corresponding row.
  • the row selection line GLb which is a sub-wiring, is for forming a bypass path in preparation for disconnection of the row selection line GLa.
  • the row selection line GLb is provided so as to pass between the sub-pixels SP1 to SP4. Specifically, it is provided across the center of the composite pixel PX so as to pass between the upper subpixels SP1 and SP2 of the 2 ⁇ 2 matrix and the lower subpixels SP3 and SP4. Therefore, at least subpixels SP3 and SP4 exist between the row selection line GLa and the row selection line GLb.
  • the gate electrodes of the pixel selection transistors M2 of the subpixels SP1 to SP4 constituting the composite pixel PX are connected to the row selection lines GLa and GLb, and the drain electrodes are connected to the signal line SL via the addition circuit AC. It is connected.
  • the pixel selection transistor M2 inputs an imaging signal corresponding to the accumulated charge of the photodiode PD to the addition circuit AC.
  • the addition circuit AC is provided for each composite pixel PX, adds the imaging signals output from the pixel selection transistors M2 of the subpixels SP1 to SP4, and inputs them to the signal line SL.
  • the imaging signal output from the addition circuit AC to the signal line SL is the imaging signal of the composite pixel PX.
  • the adder circuit AC is composed of, for example, an operational amplifier and a resistor.
  • the vertical scanning circuit 147, the circuit unit 148, and the output circuit 149 have the same configurations and operations as the vertical scanning circuit 123, the circuit unit 124, and the output circuit 132 of the second embodiment, and thus description thereof is omitted.
  • the row selection line GLa which is the main wiring, is disposed so as to pass between the composite pixels PX.
  • the row selection line GLb which is a sub-wiring, is disposed so as to pass through the center of the composite pixel PX, that is, between the upper subpixels SP1 and SP2 and the lower subpixels SP3 and SP4.
  • These row selection lines GLa and GLb are connected at a plurality of locations inside and outside the composite pixel PX by a plurality of connection lines 155, wirings connecting the subpixels SP1 to SP4 and the row selection lines GLa and GLb, and the like.
  • the row selection lines GLa and GLb are connected to the pixel selection transistors M2 of all the subpixels SP1 to SP4.
  • a vertical scanning signal is input to the row selection lines GLa and GLb, all the subpixels SP1 to SP1 are connected.
  • SP4 a voltage signal corresponding to the signal charge accumulated in each is output.
  • the row selection line GLb of the sub wiring functioning as a bypass path is provided in addition to the row selection line GLa as the main wiring as the row selection line for inputting the vertical scanning signal to each of the subpixels SP1 to SP4.
  • the manufacturing yield of the X-ray image detector 140 can be improved.
  • the vertical scanning signal is input to the pixel selection transistor M2 of the sub-pixel SP3 by tracing (indicated by a thick arrow).
  • the sub-pixel SP3 functions normally.
  • the input path of the vertical scanning signal to the pixel selection transistor M2 of the sub-pixel SP3 is illustrated, but the same applies to the other sub-pixels SP1, SP2, and SP4.
  • a plurality of composite pixels PX in the same row are connected to the row selection line GLa, but the same applies to these composite pixels PX. Further, since the row selection lines GLa and GLb are connected by a plurality of lines 155, the entire selection is made except when the row selection lines GLa and GLb are cut simultaneously between two adjacent lines 155. The pixel PX can be operated normally.
  • the row selection line Since the imaging area of the X-ray image detector has a large area, the row selection line is long, and thus disconnection is likely to occur. However, as described above, the row selection line is duplicated, so that one of the row selection lines is disconnected. Even if it occurs, all the composite pixels PX and the sub-pixels SP1 to SP4 function normally. Accordingly, the number of products that must be discarded due to the disconnection of the row selection line is reduced, and the product can be manufactured with high yield.
  • the row selection line GLb is disposed as a sub-wiring, but the row selection line GLb is disposed at a position away from the row selection line GLa via the sub-pixels SP3, SP4 and the like. Thereby, the yield can be further improved.
  • the disconnection portion 156a when the row selection lines GLa and GLb are provided adjacent to each other, if the disconnection portion 156a occurs in the row selection line GLa, the disconnection portion 156b also occurs in the row selection line GLb.
  • the composite pixel PX when disconnection occurs at substantially the same location of the row selection line GLa and the row selection line GLb, the composite pixel PX connected to the downstream side (the side far from the vertical scanning circuit 52) after the disconnection locations 156a and 156b.
  • a vertical scanning signal cannot be input to the subpixels SP1 to SP4, and the composite pixel PX does not function.
  • the two row selection lines GLa and GLb are arranged at positions separated from each other, even if the row selection line GLa is disconnected, the row selection line GLb is disconnected due to the same cause. There is no. Therefore, it is possible to more reliably reduce the yield due to the disconnection of the row selection line.
  • the disposition positions of the row selection line GLa and the row selection line GLb are that the row selection line GLa and the row selection line GLb are disposed at a distance that does not cause disconnection due to the same cause. Means. Therefore, it is preferable that at least one or more other structures such as the composite pixel PX, the sub-pixel SP, and the circuit elements of the transistors M1 to M3 are provided between the row selection line GLa and the row selection line GLb.
  • the sub-pixels SP3 and SP4 are provided between the row selection line GLa and the row selection line GLb, and the row selection line GLb is disposed so as to pass through the center of the composite pixel PX. It is preferable. This is to prevent the row selection line GLb from being adjacent to the row selection lines GLa and GLb provided in the composite pixel PX in the adjacent row, and to prevent the multiple row selection lines from being disconnected due to the same cause. is there.
  • the composite pixel PX is formed by the four subpixels SP1 to SP4, even if some of the subpixels SP are defective or defective, the other subpixels SP function normally. If so, the composite pixel PX does not become a completely defective pixel, and for example, only the sensitivity is lowered. This can be handled as a non-defective product by correcting the pixel value.
  • correction of the pixel value when any of the sub-pixels SP1 to SP4 is defective may be performed by adjusting the gain (gain) of the imaging signal by the output circuit 149, for example.
  • an X-ray image (hereinafter referred to as a calibration image) obtained by uniformly irradiating a predetermined dose of X-rays in a state in which no subject is present in a periodic calibration of an electronic cassette or the like is acquired, and this calibration image
  • the amplification factor of the output circuit 149 is determined so that the pixel value becomes constant.
  • the output circuit 149 is controlled so that the amplification factor determined by the calibration is obtained when the imaging signal of the defective pixel is read out during imaging.
  • This gain correction may be performed by an image processing unit or a console of the imaging control apparatus.
  • the composite pixel PX is formed of four sub-pixels SP1 to SP4, noise superimposed on the imaging signal can be reduced.
  • noise generated in the subpixels SP1 to SP4 includes dark current noise, kTC noise caused by transistor switching, and the like, and this value is different for each of the subpixels SP1 to SP4.
  • the kTC noise is generated by thermal fluctuation of charges accumulated in a parasitic capacitance of several pF existing in the photodiode PD and the signal line SL.
  • Such noise is reduced by forming the composite pixel PX from the sub-pixels SP1 to SP4. In the imaging signal output from the composite pixel PX, these noises are added by adding the imaging signals of the sub-pixels SP1 to SP4. Is averaged.
  • the X-ray image detector 160 is provided with a signal line SLb as a signal line together with a signal line SLa which is a main wiring.
  • a signal line SLa which is a main wiring.
  • the signal line SLa is a wiring corresponding to the signal line SL described above, and is provided between the composite pixels PX along the column direction.
  • the signal line SLb which is a sub-wiring, is a wiring for forming a detour path in preparation for disconnection of the signal line SLa.
  • the signal line SLb is provided by vertically cutting the center of the composite pixel PX so as to pass between the right side sub-pixels SP1 and SP4 and the left side sub-pixels SP2 and SP3 of the 2 ⁇ 2 matrix. Therefore, there are at least sub-pixels SP1 and SP4 between the signal line SLa and the signal line SLb.
  • the signal line SLa and the signal line SLb are connected by a connection line 161 at a plurality of locations inside and outside the imaging region 146. Therefore, for example, when the signal line SLa is disconnected, the imaging signal input to the signal line SLa does not reach the circuit unit 148 without the signal line SLb. However, the X-ray image detector 160 receives the input imaging signal. Can reach the circuit unit 148 by following a detour route via the signal line SLb.
  • the 24 and 25 show a CMOS type sensor panel in which both the row selection line GL and the signal line SL are duplicated.
  • the X-ray image detector 165 prepares for disconnection by duplicating both the row selection line GL and the signal line SL.
  • the X-ray image detector 165 is provided with a row selection line GLa for the main wiring and a row selection line GLb for the sub-wiring that forms a detour path as the row selection line GL.
  • the row selection line GLa is provided between the composite pixels PX, and the row selection line GLb is provided across the center of the composite pixel PX so as to pass between the subpixels SP1 and SP2 and the subpixels SP3 and SP4. ing.
  • the X-ray image detector 165 is provided with a row selection line SLa for the main wiring and a signal line SLb for the sub wiring that forms a detour path as the signal lines SL.
  • the signal line SLa is provided between the composite pixels PX, and the signal line SLb is provided by cutting the center of the composite pixel PX vertically so as to pass between the subpixels SP1 and SP4 and the subpixels SP2 and SP3. .
  • the reset line RSTa of the main wiring is provided between the composite pixels PX
  • the reset line RSTb of the sub wiring forming the detour path is the sub pixels SP1, SP2 and the sub pixels SP3, SP4. It is provided across the center of the composite pixel PX so as to pass therethrough.
  • the double wiring of the wiring is not limited to the CMOS type sensor panel but is also suitable for a TFT type sensor panel in which circuit elements such as TFTs are formed on an insulating substrate such as a glass substrate like a TFT active matrix substrate of a liquid crystal panel. is there.
  • a TFT type sensor panel in which circuit elements such as TFTs are formed on an insulating substrate such as a glass substrate like a TFT active matrix substrate of a liquid crystal panel. is there.
  • CMOS type sensor panel disconnection of the row selection line GL or the like is more likely to occur than in the TFT type due to a defect of the silicon substrate, etc. Therefore, double wiring is preferable to the CMOS type sensor panel.
  • the CMOS sensor panel may break the row selection line GL or the like due to deterioration with time of the silicon substrate or the like due to X-ray irradiation, an effect of extending the product life can be obtained.
  • the so-called indirect conversion type in which X-rays are converted into visible light by the scintillator 46 and the visible light emitted from the scintillator 46 is photoelectrically converted has been described as an example, but the present embodiment is not limited thereto.
  • the present invention can be applied to a direct conversion type in which incident X-rays are directly converted into electric charges without being converted into visible light.
  • each pixel 170 has one photodiode PD.
  • the row selection line GL is duplicated, the row selection line GLa and the row selection line GLb of the main wiring are provided above and below the pixel 170 so that the pixel 170 is disposed therebetween.
  • each pixel 170 functions normally by the detour path passing through the row selection line GLb, and the row selection line GLa and the row selection line GLb for the same row Will not break for the same reason.
  • the row selection line GLa, the signal line SLa, and the reset line RSTa are used as the main wirings, and the row selection line GLb, the signal line SLb, and the reset line RSTb are used as the sub wirings.
  • GLA may be referred to as a sub-wiring, and GLb may be referred to as a main wiring.
  • the subpixel SP may be formed using four or more transistors.
  • the example in which the composite pixel PX is configured by the four subpixels SP1 to SP4 has been described, but two, three, or four or more subpixels SP may be used.
  • the first to third embodiments may be used in combination.
  • the CMOS type sensor panel of the third embodiment in which wiring such as the row selection line GL is doubled may be used for the CMOS type sensor panel of the first embodiment.
  • the wiring double wiring of the third embodiment may be applied to each block of the CMOS type sensor panel of the second embodiment.
  • the electronic cassette and the imaging control device are described separately. However, even if the electronic cassette and the imaging control device are integrated, for example, the function of the imaging control device is built in the control circuit of the electronic cassette. Good. Although image processing is performed by the console, it may be performed by an electronic cassette or a photographing control device. Further, the console may be integrated with the function of the imaging control device.
  • the present invention can be applied not only to X-rays but also to imaging systems that use other radiation such as ⁇ rays.

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  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)

Abstract

La présente invention a pour but de supprimer le retard de transmission et l'atténuation d'un signal de balayage vertical d'un circuit de balayage vertical en raison de l'augmentation de la surface d'un panneau de détecteur CMOS. Un détecteur d'image par rayons X (116) d'une cassette électronique (115) comprend un panneau de capteur CMOS (117). Le panneau de capteur CMOS (117) est formé par agencement, dans une direction de rangée, d'une pluralité de blocs rectangulaires (118), configurés chacun à partir d'une région de capture d'image (122) qui est formée par agencement d'une pluralité de pixels (121) dans une matrice et un circuit de balayage vertical (123) qui est disposé sur le côté d'un des deux côtés le long de la direction de balayage vertical de la région de capture d'image (122) et émet un signal de balayage vertical aux pixels (121) dans une base rangée-par-rangée. Le panneau de capteur CMOS (117) est fabriqué par réalisation de multiples temps d'exposition pendant qu'un moteur pas à pas est successivement déplacé dans une direction X par la largeur du bloc (118). Dv/Dpa, qui représente la proportion du circuit de balayage vertical (123) occupée dans un pas de pixel (Dpa), est de 0,5 ou moins.
PCT/JP2012/064439 2011-06-29 2012-06-05 Dispositif de détection d'image radiologique et appareil de capture d'image radiologique WO2013001991A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2011-144282 2011-06-29
JP2011144282A JP2014178116A (ja) 2011-06-29 2011-06-29 放射線撮影装置、および放射線画像検出装置
JP2011-159933 2011-07-21
JP2011159933A JP2014179356A (ja) 2011-07-21 2011-07-21 放射線画像検出装置、および放射線撮影装置
JP2011-165631 2011-07-28
JP2011165631A JP2014179664A (ja) 2011-07-28 2011-07-28 放射線画像検出装置及び放射線撮影システム

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WO2013001991A1 true WO2013001991A1 (fr) 2013-01-03

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114068591A (zh) * 2020-07-29 2022-02-18 京东方科技集团股份有限公司 平板探测器及成像系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003078827A (ja) * 2001-08-30 2003-03-14 Canon Inc 撮像素子、その撮像素子を用いた撮像装置、及びその撮像装置を用いた撮像システム
JP2011227047A (ja) * 2010-03-29 2011-11-10 Fujifilm Corp 放射線画像撮影装置及び放射線画像撮影システム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003078827A (ja) * 2001-08-30 2003-03-14 Canon Inc 撮像素子、その撮像素子を用いた撮像装置、及びその撮像装置を用いた撮像システム
JP2011227047A (ja) * 2010-03-29 2011-11-10 Fujifilm Corp 放射線画像撮影装置及び放射線画像撮影システム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114068591A (zh) * 2020-07-29 2022-02-18 京东方科技集团股份有限公司 平板探测器及成像系统

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