WO2013001719A1 - Polishing head and polishing apparatus - Google Patents
Polishing head and polishing apparatus Download PDFInfo
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- WO2013001719A1 WO2013001719A1 PCT/JP2012/003598 JP2012003598W WO2013001719A1 WO 2013001719 A1 WO2013001719 A1 WO 2013001719A1 JP 2012003598 W JP2012003598 W JP 2012003598W WO 2013001719 A1 WO2013001719 A1 WO 2013001719A1
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- polishing
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- rubber
- rubber film
- polishing head
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention is a polishing head which is provided with at least: an annular rigid ring; a rubber film that is bonded to the rigid ring at a uniform tension; a back plate that is joined to the rigid ring so as to form a space together with the rubber film and the rigid ring; and an annular template that is arranged concentrically with the rigid ring in the periphery of the lower surface portion of the rubber film and holds an edge portion of a workpiece. The polishing head polishes the front surface of the workpiece by holding the back surface of the workpiece in the lower surface portion of the rubber film and bringing the front surface of the workpiece in slide contact with a polishing cloth that is bonded to a polishing plate. The polishing head is characterized by additionally comprising a non-compressible fluid that is sealed in the above-described space. Consequently, final polishing of a workpiece can be performed and the entire of the workpiece can be uniformly polished regardless of the thickness of a template by a polishing head that holds the back surface of the workpiece at a rubber film, while holding the edge portion of the workpiece with the template. The present invention also provides a polishing apparatus.
Description
本発明は、ワークの表面を研磨する際にワークを保持するための研磨ヘッド、及びそれを備えた研磨装置に関し、特には、ラバー膜にワークを保持する研磨ヘッド及びそれを備えた研磨装置に関する。
The present invention relates to a polishing head for holding a workpiece when polishing the surface of the workpiece, and a polishing apparatus including the same, and more particularly, to a polishing head for holding a workpiece on a rubber film and a polishing apparatus including the polishing head. .
近年の半導体デバイスの高集積化に伴い、それに用いられている半導体ウェーハの平面度の要求は益々厳しいものとなっている。また、半導体チップの収率を上げるためにウェーハのエッジ近傍の領域までの平坦性が要求されている。
半導体ウェーハの形状は最終の鏡面研磨加工によって決定されている。特に直径３００ｍｍのシリコンウェーハでは厳しい平坦度の仕様を満足するために両面研磨での一次研磨を行い、その後に表面のキズや面粗さの改善のために片面での表面二次及び仕上げ研磨を行っている。 With the recent high integration of semiconductor devices, the demand for flatness of semiconductor wafers used therein has become increasingly severe. In addition, flatness up to a region near the edge of the wafer is required to increase the yield of semiconductor chips.
The shape of the semiconductor wafer is determined by the final mirror polishing process. In particular, for silicon wafers with a diameter of 300 mm, primary polishing is performed by double-sided polishing in order to satisfy strict flatness specifications, and then surface secondary and final polishing on one side is performed to improve surface scratches and surface roughness. Is going.
半導体ウェーハの形状は最終の鏡面研磨加工によって決定されている。特に直径３００ｍｍのシリコンウェーハでは厳しい平坦度の仕様を満足するために両面研磨での一次研磨を行い、その後に表面のキズや面粗さの改善のために片面での表面二次及び仕上げ研磨を行っている。 With the recent high integration of semiconductor devices, the demand for flatness of semiconductor wafers used therein has become increasingly severe. In addition, flatness up to a region near the edge of the wafer is required to increase the yield of semiconductor chips.
The shape of the semiconductor wafer is determined by the final mirror polishing process. In particular, for silicon wafers with a diameter of 300 mm, primary polishing is performed by double-sided polishing in order to satisfy strict flatness specifications, and then surface secondary and final polishing on one side is performed to improve surface scratches and surface roughness. Is going.
片面の表面二次及び仕上げ研磨では両面一次研磨で作られた平坦度を維持あるいは改善するとともに表面側にキズ等の欠陥の無い完全鏡面に仕上げることが要求されている。
一般的な片面研磨装置は、例えば図１０に示すように、研磨布１０２が貼り付けられた定盤１０３と、研磨剤供給機構１０４と、研磨ヘッド１０１等から構成されている。このような研磨装置１１０では、研磨ヘッド１０１でワークＷを保持し、研磨剤供給機構１０４から研磨布１０２上に研磨剤１０５を供給するとともに、定盤１０３と研磨ヘッド１０１をそれぞれ回転させてワークＷの表面を研磨布１０２に摺接させることにより研磨を行う。 In the single-surface secondary and finish polishing, it is required to maintain or improve the flatness created by the double-side primary polishing and finish the surface to a perfect mirror surface free from defects such as scratches.
For example, as shown in FIG. 10, a general single-side polishing apparatus includes a surface plate 103 to which apolishing cloth 102 is attached, an abrasive supply mechanism 104, a polishing head 101, and the like. In such a polishing apparatus 110, the workpiece W is held by the polishing head 101, the polishing agent 105 is supplied from the polishing agent supply mechanism 104 onto the polishing cloth 102, and the surface plate 103 and the polishing head 101 are rotated to rotate the workpiece. Polishing is performed by bringing the surface of W into sliding contact with the polishing pad 102.
一般的な片面研磨装置は、例えば図１０に示すように、研磨布１０２が貼り付けられた定盤１０３と、研磨剤供給機構１０４と、研磨ヘッド１０１等から構成されている。このような研磨装置１１０では、研磨ヘッド１０１でワークＷを保持し、研磨剤供給機構１０４から研磨布１０２上に研磨剤１０５を供給するとともに、定盤１０３と研磨ヘッド１０１をそれぞれ回転させてワークＷの表面を研磨布１０２に摺接させることにより研磨を行う。 In the single-surface secondary and finish polishing, it is required to maintain or improve the flatness created by the double-side primary polishing and finish the surface to a perfect mirror surface free from defects such as scratches.
For example, as shown in FIG. 10, a general single-side polishing apparatus includes a surface plate 103 to which a
ワークを研磨ヘッドに保持する方法としては、平坦なワーク保持盤にワックス等の接着剤を介してワークを貼り付ける方法等がある。また、図１１に示すように、バッキングフィルム１１３ａと呼ばれる弾性膜の上にワークの飛び出し防止用のテンプレート１１３ｂが接着されて市販されているテンプレートアセンブリ１１３をワーク保持盤１１２に貼ってワークＷを保持するワックスレス方式の研磨ヘッド１２１等がある。
As a method of holding the work on the polishing head, there is a method of attaching the work to a flat work holding board via an adhesive such as wax. Further, as shown in FIG. 11, a template assembly 113 that is commercially available with a template 113b for preventing workpiece popping out adhered to an elastic film called a backing film 113a is attached to a workpiece holding board 112 to hold the workpiece W. There is a waxless type polishing head 121 or the like.
ワックスレス方式の別の研磨ヘッドとして、図１２に示すように、市販のテンプレートの代わりにワーク保持盤１１２の表面にバッキングフィルム１１３ａを貼り、ワーク保持盤側面にワーク飛び出し防止用の円環状のガイドリング１１３ｂを設けた研磨ヘッド１３１等も用いられている。
ワーク保持盤１１２には、一般には高平坦なセラミックプレートを用いているが、バッキングフィルム１１３ａの厚さむら等により、微小な圧力分布が生じ、加工後のワーク表面にうねりが生じ、ワークの平坦度を悪化させる問題がある。 As another waxless type polishing head, as shown in FIG. 12, a backing film 113a is pasted on the surface of the work holding plate 112 instead of a commercially available template, and an annular guide for preventing the workpiece from jumping out on the side of the work holding plate. A polishing head 131 provided with a ring 113b is also used.
The work holding plate 112 is generally made of a highly flat ceramic plate. However, due to uneven thickness of the backing film 113a, etc., a minute pressure distribution is generated, and the surface of the work after processing is swelled. There is a problem that worsens the degree.
ワーク保持盤１１２には、一般には高平坦なセラミックプレートを用いているが、バッキングフィルム１１３ａの厚さむら等により、微小な圧力分布が生じ、加工後のワーク表面にうねりが生じ、ワークの平坦度を悪化させる問題がある。 As another waxless type polishing head, as shown in FIG. 12, a backing film 113a is pasted on the surface of the work holding plate 112 instead of a commercially available template, and an annular guide for preventing the workpiece from jumping out on the side of the work holding plate. A polishing head 131 provided with a ring 113b is also used.
The work holding plate 112 is generally made of a highly flat ceramic plate. However, due to uneven thickness of the backing film 113a, etc., a minute pressure distribution is generated, and the surface of the work after processing is swelled. There is a problem that worsens the degree.
そこで、ワーク保持盤の代わりにワーク保持部をラバー膜とし、該ラバー膜の背面に空気等の加圧流体を流し込み、均一の圧力でラバー膜を膨らませて研磨布にワークを押圧する、いわゆるラバーチャック方式の研磨ヘッドも提案されている（例えば、特許文献１参照）。
Therefore, instead of the work holding plate, the work holding part is made of a rubber film, a pressurized fluid such as air is poured into the back surface of the rubber film, and the rubber film is expanded with a uniform pressure to press the work against the polishing cloth. A chuck-type polishing head has also been proposed (see, for example, Patent Document 1).
ラバーチャック方式の研磨ヘッドの構成の一例を模式的に図１３に示す。この研磨ヘッド１４１の要部は、環状のＳＵＳ製などの剛性リング１４４と、剛性リング１４４に接着されたラバー膜１４３と、剛性リング１４４に結合された裏板１４５とからなる。剛性リング１４４と、ラバー膜１４３と、裏板１４５とによって、密閉された空間部１４６が形成される。また、ラバー膜１４３の下面部にはバッキングフィルム１４８が貼られ、剛性リング１４４と同心に、環状のテンプレート１４７が具備される。また、裏板１４５の中央には圧力調整機構１５０により加圧流体を供給するなどして空間部１４６の圧力を調節する。また、裏板１４５に連結される研磨ヘッド上部１４９は、裏板１４５を研磨布方向に押圧する図示しない押圧手段を有している。
An example of the structure of a rubber chuck type polishing head is schematically shown in FIG. The main part of the polishing head 141 includes an annular rigid ring 144 made of SUS, a rubber film 143 bonded to the rigid ring 144, and a back plate 145 coupled to the rigid ring 144. A sealed space 146 is formed by the rigid ring 144, the rubber film 143, and the back plate 145. A backing film 148 is attached to the lower surface portion of the rubber film 143, and an annular template 147 is provided concentrically with the rigid ring 144. Further, the pressure of the space 146 is adjusted by supplying a pressurized fluid to the center of the back plate 145 by the pressure adjusting mechanism 150. Further, the polishing head upper part 149 connected to the back plate 145 has a pressing means (not shown) for pressing the back plate 145 in the polishing cloth direction.
このようなラバーチャック方式の研磨ヘッドを用いることで、バッキングフィルムの厚さむらに起因した微小な圧力分布が生じないため、加工後のワーク表面にうねりが生じない。しかし、テンプレートの内径はワークの外径よりも大きいため、テンプレートとワークの間には僅かに隙間が生じ、上記したように空間部の内部に圧力調整機構により加圧流体を供給して圧力調整を行った場合、テンプレートとワークの間の隙間部分のラバー膜の膨らみが大きくなり、ワーク外周部の圧力が高くなり、ワーク外周部が過研磨されることにより外周ダレが発生しやすくなる。
By using such a rubber chuck type polishing head, a minute pressure distribution due to uneven thickness of the backing film does not occur, so that the surface of the workpiece after processing does not waviness. However, since the inner diameter of the template is larger than the outer diameter of the workpiece, there is a slight gap between the template and the workpiece. As described above, the pressure adjustment mechanism supplies the pressurized fluid to the inside of the space portion to adjust the pressure. In this case, the swelling of the rubber film in the gap portion between the template and the workpiece increases, the pressure on the outer periphery of the workpiece increases, and the outer periphery of the workpiece is excessively polished, so that the outer peripheral sag is likely to occur.
テンプレートの厚さを調整することで、ワーク外周部の圧力をある程度調節することは可能だが、該テンプレートの厚さばらつきによってワーク外周部の研磨代が変化し、安定した平坦度が得られない問題が生じる。
また、ワークの仕上げ研磨においては、仕上げ研磨布にテンプレートを接触させた場合、テンプレートからの異物の脱離等により、ワークの表面に傷等の欠陥を発生させてしまうため、テンプレートを研磨布に接触させないことが望まれる。 By adjusting the thickness of the template, it is possible to adjust the pressure on the outer periphery of the work to some extent, but the polishing margin of the work outer periphery changes due to variations in the thickness of the template, and stable flatness cannot be obtained. Occurs.
In finish polishing of a workpiece, if the template is brought into contact with the final polishing cloth, defects such as scratches may be generated on the surface of the workpiece due to detachment of foreign matter from the template. It is desirable not to contact.
また、ワークの仕上げ研磨においては、仕上げ研磨布にテンプレートを接触させた場合、テンプレートからの異物の脱離等により、ワークの表面に傷等の欠陥を発生させてしまうため、テンプレートを研磨布に接触させないことが望まれる。 By adjusting the thickness of the template, it is possible to adjust the pressure on the outer periphery of the work to some extent, but the polishing margin of the work outer periphery changes due to variations in the thickness of the template, and stable flatness cannot be obtained. Occurs.
In finish polishing of a workpiece, if the template is brought into contact with the final polishing cloth, defects such as scratches may be generated on the surface of the workpiece due to detachment of foreign matter from the template. It is desirable not to contact.
しかしながら、テンプレートの厚さを研磨布に接触させないようにワークの厚さよりも薄くした場合、ワーク外周部の圧力が高くなり、ワーク外周部が過研磨されることにより外周ダレが発生し、ワークの平坦度を悪化させてしまうため、ワークの仕上げ研磨には適用できない問題もあった。
However, when the thickness of the template is made thinner than the thickness of the workpiece so as not to contact the polishing cloth, the pressure on the outer periphery of the workpiece becomes high, and the outer periphery of the workpiece is overpolished, resulting in peripheral sagging. Since the flatness is deteriorated, there is a problem that it cannot be applied to the finish polishing of the workpiece.
本発明は前述のような問題に鑑みてなされたもので、ラバー膜にワークの裏面を保持し、テンプレートでワークのエッジ部を保持する研磨ヘッドにおいて、ワーク表面にキズ等の表面欠陥を発生させることなく研磨するためにテンプレートを研磨布に接触させないようにテンプレートの厚さをワークの厚さより薄くしても、ワーク外周部まで均一に研磨でき、すなわち、ワークの仕上げ研磨が可能で、かつ、テンプレートの厚みによらずワーク全体を均一に研磨できる研磨ヘッド及び研磨装置を提供することを目的とする。
The present invention has been made in view of the above-described problems, and causes a surface defect such as a scratch on the work surface in a polishing head that holds a back surface of a work on a rubber film and holds an edge portion of the work with a template. Even if the thickness of the template is made thinner than the thickness of the workpiece so that the template is not brought into contact with the polishing cloth without polishing, the workpiece can be uniformly polished to the outer periphery of the workpiece, that is, finish polishing of the workpiece is possible, and An object of the present invention is to provide a polishing head and a polishing apparatus that can uniformly polish the entire workpiece regardless of the thickness of the template.
上記目的を達成するために、本発明によれば、少なくとも、環状の剛性リングと、該剛性リングに均一の張力で接着されたラバー膜と、前記剛性リングに結合され、前記ラバー膜と前記剛性リングとともに空間部を形成する裏板と、前記ラバー膜の下面部の周辺部に前記剛性リングと同心に設けられ、ワークのエッジ部を保持する環状のテンプレートとを具備し、前記ラバー膜の下面部に前記ワークの裏面を保持し、該ワークの表面を定盤上に貼り付けられた研磨布に摺接させて研磨する研磨ヘッドにおいて、さらに、前記空間部に封入された非圧縮性の流体を有するものであることを特徴とする研磨ヘッドが提供される。
In order to achieve the above object, according to the present invention, at least an annular rigid ring, a rubber film bonded to the rigid ring with a uniform tension, and a rubber film coupled to the rigid ring, the rubber film and the rigid A back plate that forms a space together with the ring, and an annular template that is provided concentrically with the rigid ring on the periphery of the lower surface portion of the rubber film and holds the edge portion of the workpiece, and the lower surface of the rubber film An incompressible fluid sealed in the space part is further provided in a polishing head that holds the back surface of the work in a portion and polishes the work surface by sliding the surface of the work in contact with a polishing cloth affixed on a surface plate. There is provided a polishing head characterized by comprising:
このような研磨ヘッドであれば、封入された非圧縮性の流体によって、ワークを保持するラバー膜の表面形状を適切に調整することが可能となり、また、ワークの研磨中にその表面形状の局所的な変形を抑制できる。その結果、テンプレートの厚さによらずワーク全体を均一に研磨できるものとなる。また、テンプレートの厚さをワークの厚さより薄くしてもワークの全体を均一に研磨できるので、ワークの仕上げ研磨に適用することもできる。
With such a polishing head, it becomes possible to appropriately adjust the surface shape of the rubber film holding the workpiece by the enclosed incompressible fluid, and the surface shape of the rubber film is locally localized during polishing of the workpiece. Deformation can be suppressed. As a result, the entire workpiece can be uniformly polished regardless of the thickness of the template. Moreover, even if the thickness of the template is made thinner than the thickness of the workpiece, the entire workpiece can be polished uniformly, so that it can also be applied to finish polishing of the workpiece.
このとき、前記非圧縮性の流体を、水又は主成分が水である非圧縮性の流体とすることができる。
このようなものであれば、低コストで構成できるし、例え、非圧縮性の流体が空間部から漏れたとしても、ワークや研磨装置の内部を汚染する恐れもない。 At this time, the incompressible fluid can be water or an incompressible fluid whose main component is water.
If it is such, it can comprise at low cost, and even if an incompressible fluid leaks from a space part, there is no possibility of contaminating the inside of a workpiece | work and a grinding | polishing apparatus.
このようなものであれば、低コストで構成できるし、例え、非圧縮性の流体が空間部から漏れたとしても、ワークや研磨装置の内部を汚染する恐れもない。 At this time, the incompressible fluid can be water or an incompressible fluid whose main component is water.
If it is such, it can comprise at low cost, and even if an incompressible fluid leaks from a space part, there is no possibility of contaminating the inside of a workpiece | work and a grinding | polishing apparatus.
またこのとき、前記非圧縮性の流体を、前記ワークの研磨時に用いる研磨剤、又は該研磨剤に含まれる成分の少なくともひとつ以上の成分を有した水溶液とすることができる。
このようなものであれば、例え、非圧縮性の流体が空間部から漏れたとしても、ワークの研磨特性への影響を抑制できるものとなる。 Further, at this time, the incompressible fluid can be an aqueous solution having at least one component of a polishing agent used when polishing the workpiece or a component contained in the polishing agent.
If it is such, even if an incompressible fluid leaks from a space part, the influence on the grinding | polishing characteristic of a workpiece | work can be suppressed.
このようなものであれば、例え、非圧縮性の流体が空間部から漏れたとしても、ワークの研磨特性への影響を抑制できるものとなる。 Further, at this time, the incompressible fluid can be an aqueous solution having at least one component of a polishing agent used when polishing the workpiece or a component contained in the polishing agent.
If it is such, even if an incompressible fluid leaks from a space part, the influence on the grinding | polishing characteristic of a workpiece | work can be suppressed.
またこのとき、前記テンプレートと前記ワークの厚さの差に応じて、前記ラバー膜の下面部の膨らみ形状が調整されたものであることが好ましい。
このようなものであれば、ワーク外周部の研磨代を調整することができ、ワーク全体をより確実に均一に研磨できるものとなる。 At this time, it is preferable that the bulging shape of the lower surface portion of the rubber film is adjusted according to the difference in thickness between the template and the workpiece.
If it is such, the grinding | polishing allowance of a workpiece | work outer peripheral part can be adjusted, and the whole workpiece | work can be grind | polished uniformly more reliably.
このようなものであれば、ワーク外周部の研磨代を調整することができ、ワーク全体をより確実に均一に研磨できるものとなる。 At this time, it is preferable that the bulging shape of the lower surface portion of the rubber film is adjusted according to the difference in thickness between the template and the workpiece.
If it is such, the grinding | polishing allowance of a workpiece | work outer peripheral part can be adjusted, and the whole workpiece | work can be grind | polished uniformly more reliably.
またこのとき、前記非圧縮性の流体は、前記ワークの研磨時の研磨圧力よりも高い圧力で封入されたものであることが好ましい。
このようなものであれば、ワーク外周部への圧力増加を抑制でき、ワークに対してより均一な研磨荷重でワークを研磨できるものとなる。 At this time, it is preferable that the incompressible fluid is sealed at a pressure higher than a polishing pressure at the time of polishing the workpiece.
With such a configuration, it is possible to suppress an increase in pressure on the outer periphery of the workpiece, and the workpiece can be polished with a more uniform polishing load with respect to the workpiece.
このようなものであれば、ワーク外周部への圧力増加を抑制でき、ワークに対してより均一な研磨荷重でワークを研磨できるものとなる。 At this time, it is preferable that the incompressible fluid is sealed at a pressure higher than a polishing pressure at the time of polishing the workpiece.
With such a configuration, it is possible to suppress an increase in pressure on the outer periphery of the workpiece, and the workpiece can be polished with a more uniform polishing load with respect to the workpiece.
またこのとき、前記ラバー膜は、３０Ｎ以上の張力で張られた状態で、前記剛性リングに接着されたものであることが好ましい。
このようなものであれば、ワークの研磨中に、非圧縮性の流体封入後のラバー膜の表面形状を確実に維持でき、ワーク全体をより確実に均一に研磨できるものとなる。 At this time, it is preferable that the rubber film is bonded to the rigid ring while being stretched with a tension of 30 N or more.
With such a configuration, the surface shape of the rubber film after filling the incompressible fluid can be reliably maintained during the polishing of the workpiece, and the entire workpiece can be polished more reliably and uniformly.
このようなものであれば、ワークの研磨中に、非圧縮性の流体封入後のラバー膜の表面形状を確実に維持でき、ワーク全体をより確実に均一に研磨できるものとなる。 At this time, it is preferable that the rubber film is bonded to the rigid ring while being stretched with a tension of 30 N or more.
With such a configuration, the surface shape of the rubber film after filling the incompressible fluid can be reliably maintained during the polishing of the workpiece, and the entire workpiece can be polished more reliably and uniformly.
またこのとき、前記ラバー膜が、イソプレンゴム、スチレンブタジエンゴム、クロロプレンゴム、ＮＢＲゴム、ウレタンゴム、フッ素ゴム、シリコンゴム、エチレンプロピレンゴム、ポリエステルエラストマー、ポリサルフォン樹脂、グリルアミド樹脂のいずれかひとつの材料から成るものであることが好ましい。
このように、強靱で高張力で引っ張っても裂けにくい材料を用いたものであれば、非圧縮性の流体封入後のラバー膜の表面形状を長期に亘って維持できるものとなり、ワーク全体をより確実に均一に研磨できるとともに、コストを低減できる。 Further, at this time, the rubber film is made of any one material of isoprene rubber, styrene butadiene rubber, chloroprene rubber, NBR rubber, urethane rubber, fluorine rubber, silicon rubber, ethylene propylene rubber, polyester elastomer, polysulfone resin, and grill amide resin. It is preferable that it consists of.
In this way, if a material that is tough and does not tear easily even when pulled with high tension, the surface shape of the rubber film after filling incompressible fluid can be maintained over a long period of time, and the entire workpiece can be further improved. The polishing can be performed uniformly and the cost can be reduced.
このように、強靱で高張力で引っ張っても裂けにくい材料を用いたものであれば、非圧縮性の流体封入後のラバー膜の表面形状を長期に亘って維持できるものとなり、ワーク全体をより確実に均一に研磨できるとともに、コストを低減できる。 Further, at this time, the rubber film is made of any one material of isoprene rubber, styrene butadiene rubber, chloroprene rubber, NBR rubber, urethane rubber, fluorine rubber, silicon rubber, ethylene propylene rubber, polyester elastomer, polysulfone resin, and grill amide resin. It is preferable that it consists of.
In this way, if a material that is tough and does not tear easily even when pulled with high tension, the surface shape of the rubber film after filling incompressible fluid can be maintained over a long period of time, and the entire workpiece can be further improved. The polishing can be performed uniformly and the cost can be reduced.
また、本発明によれば、ワークの表面を研磨する際に使用する研磨装置であって、少なくとも、定盤上に貼り付けられた研磨布と、該研磨布上に研磨剤を供給するための研磨剤供給機構と、前記ワークを保持するための研磨ヘッドとして、本発明の研磨ヘッドを具備するものであることを特徴とする研磨装置が提供される。
このような研磨装置であれば、本発明の研磨ヘッドの封入された非圧縮性の流体によって、ワークを保持するラバー膜の表面形状を適切に調整することが可能となり、またワークの研磨中に表面形状の局所的な変形を抑制でき、その結果、テンプレートの厚さによらずワーク全体を均一に研磨することができるものとなる。また、テンプレートの厚さをワークの厚さより薄くしてもワーク全体を均一に研磨できるので、ワークの仕上げ研磨に適用することもできる。 Further, according to the present invention, there is provided a polishing apparatus for use in polishing the surface of a workpiece, and at least for supplying a polishing cloth affixed on a surface plate and a polishing agent on the polishing cloth. As a polishing head for holding an abrasive supply mechanism and the workpiece, a polishing apparatus comprising the polishing head of the present invention is provided.
With such a polishing apparatus, it is possible to appropriately adjust the surface shape of the rubber film holding the workpiece by the incompressible fluid sealed in the polishing head of the present invention, and during polishing of the workpiece. Local deformation of the surface shape can be suppressed, and as a result, the entire workpiece can be uniformly polished regardless of the thickness of the template. Further, even if the thickness of the template is made thinner than the thickness of the workpiece, the entire workpiece can be polished uniformly, so that it can also be applied to finish polishing of the workpiece.
このような研磨装置であれば、本発明の研磨ヘッドの封入された非圧縮性の流体によって、ワークを保持するラバー膜の表面形状を適切に調整することが可能となり、またワークの研磨中に表面形状の局所的な変形を抑制でき、その結果、テンプレートの厚さによらずワーク全体を均一に研磨することができるものとなる。また、テンプレートの厚さをワークの厚さより薄くしてもワーク全体を均一に研磨できるので、ワークの仕上げ研磨に適用することもできる。 Further, according to the present invention, there is provided a polishing apparatus for use in polishing the surface of a workpiece, and at least for supplying a polishing cloth affixed on a surface plate and a polishing agent on the polishing cloth. As a polishing head for holding an abrasive supply mechanism and the workpiece, a polishing apparatus comprising the polishing head of the present invention is provided.
With such a polishing apparatus, it is possible to appropriately adjust the surface shape of the rubber film holding the workpiece by the incompressible fluid sealed in the polishing head of the present invention, and during polishing of the workpiece. Local deformation of the surface shape can be suppressed, and as a result, the entire workpiece can be uniformly polished regardless of the thickness of the template. Further, even if the thickness of the template is made thinner than the thickness of the workpiece, the entire workpiece can be polished uniformly, so that it can also be applied to finish polishing of the workpiece.
本発明では、研磨ヘッドにおいて、空間部に封入された非圧縮性の流体を有するものであるので、封入された非圧縮性の流体によって、ワークを保持するラバー膜の表面形状を適切に調整することが可能となり、また、ワークの研磨中にその表面形状の局所的な変形を抑制できる。その結果、テンプレートの厚さによらずワーク全体を均一に研磨できるものとなる。また、テンプレートの厚さをワークの厚さより薄くしてもワークの全体を均一に研磨できるので、ワークの仕上げ研磨に適用することもできる。
In the present invention, since the polishing head has the incompressible fluid sealed in the space portion, the surface shape of the rubber film holding the workpiece is appropriately adjusted by the sealed incompressible fluid. In addition, it is possible to suppress local deformation of the surface shape during polishing of the workpiece. As a result, the entire workpiece can be uniformly polished regardless of the thickness of the template. Moreover, even if the thickness of the template is made thinner than the thickness of the workpiece, the entire workpiece can be polished uniformly, so that it can also be applied to finish polishing of the workpiece.
以下、本発明について実施の形態を説明するが、本発明はこれに限定されるものではない。
従来より、テンプレートの厚みによってワーク外周部の研磨代が変化し、安定した平坦度が得られないという問題がある。さらに、外周ダレを抑制するためにテンプレートの厚さをワークと同じかあるいは、それよりも厚くする必要があるが、この場合には、研磨中にテンプレートが研磨布と接触して異物等が発生し、ワークの表面に傷等の欠陥を発生させてしまうという問題が生じる。 Hereinafter, although an embodiment is described about the present invention, the present invention is not limited to this.
Conventionally, there is a problem that the polishing margin of the outer periphery of the workpiece varies depending on the thickness of the template, and stable flatness cannot be obtained. In addition, the thickness of the template must be the same as or thicker than that of the workpiece in order to suppress peripheral sagging. In this case, the template contacts the polishing cloth during polishing, and foreign matter is generated. However, there arises a problem that defects such as scratches are generated on the surface of the workpiece.
従来より、テンプレートの厚みによってワーク外周部の研磨代が変化し、安定した平坦度が得られないという問題がある。さらに、外周ダレを抑制するためにテンプレートの厚さをワークと同じかあるいは、それよりも厚くする必要があるが、この場合には、研磨中にテンプレートが研磨布と接触して異物等が発生し、ワークの表面に傷等の欠陥を発生させてしまうという問題が生じる。 Hereinafter, although an embodiment is described about the present invention, the present invention is not limited to this.
Conventionally, there is a problem that the polishing margin of the outer periphery of the workpiece varies depending on the thickness of the template, and stable flatness cannot be obtained. In addition, the thickness of the template must be the same as or thicker than that of the workpiece in order to suppress peripheral sagging. In this case, the template contacts the polishing cloth during polishing, and foreign matter is generated. However, there arises a problem that defects such as scratches are generated on the surface of the workpiece.
そこで、本発明者はこのような問題を解決すべく鋭意検討を重ねた。その結果、環状の剛性リングに均一の張力でラバー膜を接着し、上部に裏板を設けて形成した密閉空間部に、予め非圧縮性の流体を封入してワークを保持するラバーチャック部を形成することで、テンプレートの厚さによらず平坦なワークの研磨ができることを見出し、本発明を完成させた。
Therefore, the present inventor has intensively studied to solve such problems. As a result, the rubber film is bonded to the annular rigid ring with a uniform tension, and the rubber chuck part that holds the workpiece by sealing the incompressible fluid in advance in the sealed space formed by providing the back plate on the top. As a result, it was found that a flat workpiece can be polished regardless of the thickness of the template, and the present invention was completed.
図１は本発明の研磨ヘッドの一例を示した図である。
図１に示すように、研磨ヘッド１は、例えばＳＵＳ（ステンレス）等の剛性材料からなる環状の剛性リング４と、剛性リング４の下面側に均一の張力で接着されたラバー膜３と、剛性リング４の上面に設けられた裏板５とを備える。
この剛性リング４と、ラバー膜３と、裏板５とによって、密閉された空間部６が形成されている。 FIG. 1 is a view showing an example of the polishing head of the present invention.
As shown in FIG. 1, the polishinghead 1 includes an annular rigid ring 4 made of a rigid material such as SUS (stainless steel), a rubber film 3 bonded to the lower surface side of the rigid ring 4 with a uniform tension, and a rigidity. And a back plate 5 provided on the upper surface of the ring 4.
Therigid ring 4, the rubber film 3, and the back plate 5 form a sealed space 6.
図１に示すように、研磨ヘッド１は、例えばＳＵＳ（ステンレス）等の剛性材料からなる環状の剛性リング４と、剛性リング４の下面側に均一の張力で接着されたラバー膜３と、剛性リング４の上面に設けられた裏板５とを備える。
この剛性リング４と、ラバー膜３と、裏板５とによって、密閉された空間部６が形成されている。 FIG. 1 is a view showing an example of the polishing head of the present invention.
As shown in FIG. 1, the polishing
The
ここで、裏板５の材質、形状は特に限定されることはなく、剛性リング４と、ラバー膜３と共に空間部６を形成できるものであれば良い。
また、ラバー膜３の下面部の周辺部には、ワークＷの外径よりも若干大きな内径を有した環状のテンプレート７が剛性リング４と同心状に配設されている。このテンプレート７は、ワークＷのエッジ部を保持するためのものであり、ラバー膜３の下面部の外周部に沿って、下方に突出するように配設されている。 Here, the material and shape of theback plate 5 are not particularly limited as long as the space 6 can be formed together with the rigid ring 4 and the rubber film 3.
Anannular template 7 having an inner diameter slightly larger than the outer diameter of the workpiece W is disposed concentrically with the rigid ring 4 at the periphery of the lower surface portion of the rubber film 3. The template 7 is for holding the edge portion of the workpiece W, and is disposed so as to protrude downward along the outer peripheral portion of the lower surface portion of the rubber film 3.
また、ラバー膜３の下面部の周辺部には、ワークＷの外径よりも若干大きな内径を有した環状のテンプレート７が剛性リング４と同心状に配設されている。このテンプレート７は、ワークＷのエッジ部を保持するためのものであり、ラバー膜３の下面部の外周部に沿って、下方に突出するように配設されている。 Here, the material and shape of the
An
ここで、テンプレート７は、その外径が少なくとも剛性リング４の内径よりも大きいもので、かつ、その内径が剛性リング４の内径よりも小さいものとすることができる。このようにすれば、ワーク全面にかかる押圧力をより均一にすることができる。
またここで、テンプレート７の材質は、ワークＷを汚染せず、かつ、キズや圧痕をつけないために、ワークＷよりも柔らかく、研磨中に研磨装置の研磨布と摺接されても磨耗しにくい、耐磨耗性の高い材質であることが好ましい。
図１に示す研磨ヘッドの例では、テンプレート７の厚さがワークＷの厚さよりも薄いものであるが、特にこれに限定されることはなく、図３に示すように、テンプレート７の厚さがワークＷの厚さよりも厚いものであっても良いし、同じであっても良い。 Here, thetemplate 7 can have an outer diameter that is at least larger than an inner diameter of the rigid ring 4 and an inner diameter that is smaller than the inner diameter of the rigid ring 4. In this way, the pressing force applied to the entire work surface can be made more uniform.
Here, the material of thetemplate 7 is softer than the work W so as not to contaminate the work W and not to be scratched or indented, and wears even if it comes into sliding contact with the polishing cloth of the polishing apparatus during polishing. It is preferable that the material is difficult and has high wear resistance.
In the example of the polishing head shown in FIG. 1, the thickness of thetemplate 7 is thinner than the thickness of the workpiece W. However, the thickness of the template 7 is not limited to this, as shown in FIG. May be thicker than the thickness of the workpiece W, or may be the same.
またここで、テンプレート７の材質は、ワークＷを汚染せず、かつ、キズや圧痕をつけないために、ワークＷよりも柔らかく、研磨中に研磨装置の研磨布と摺接されても磨耗しにくい、耐磨耗性の高い材質であることが好ましい。
図１に示す研磨ヘッドの例では、テンプレート７の厚さがワークＷの厚さよりも薄いものであるが、特にこれに限定されることはなく、図３に示すように、テンプレート７の厚さがワークＷの厚さよりも厚いものであっても良いし、同じであっても良い。 Here, the
Here, the material of the
In the example of the polishing head shown in FIG. 1, the thickness of the
また、ラバー膜３の下面部の少なくともワークＷを保持する部分にバッキングフィルム８を貼設することができる。バッキングフィルム８は、水を含ませてワークＷを貼りつけ、ラバー膜３のワーク保持面にワークＷを保持するものである。ここで、バッキングフィルム８は、例えばポリウレタン製とすることができる。このようなバッキングフィルム８を設けて水を含ませる事で、バッキングフィルム８に含まれる水の表面張力によりワークＷを確実に保持することができる。
Further, the backing film 8 can be attached to at least a portion of the lower surface portion of the rubber film 3 that holds the workpiece W. The backing film 8 includes water and affixes the work W, and holds the work W on the work holding surface of the rubber film 3. Here, the backing film 8 can be made of polyurethane, for example. By providing such a backing film 8 and containing water, the workpiece W can be reliably held by the surface tension of the water contained in the backing film 8.
またここで、バッキングフィルムの表面にテンプレートを貼ってテンプレートアセンブリとして市販されているものを用いても良い。
このような、ラバー膜３、剛性リング４及び裏板５等から構成されるラバーチャック部において、ワークＷを研磨する前に、予め空間部６内に非圧縮性の流体２が封入される。この非圧縮性の流体２の封入の際に、ワークＷを保持するラバー膜３のワーク保持部分の表面形状を調整して最適に形成する。その後、不図示の加圧手段を備えた研磨ヘッド上部９が裏板５の上面に装着される。ここで、本発明で言う非圧縮性の流体とは、例えば、気体のように加圧されると圧縮されて体積が大幅に縮小する流体ではない流体のことである。 Here, a commercially available template assembly may be used by attaching a template to the surface of the backing film.
In such a rubber chuck portion composed of therubber film 3, the rigid ring 4, the back plate 5, and the like, the incompressible fluid 2 is sealed in the space portion 6 in advance before the workpiece W is polished. When the incompressible fluid 2 is sealed, the surface shape of the workpiece holding portion of the rubber film 3 holding the workpiece W is adjusted to be optimally formed. Thereafter, the polishing head upper part 9 provided with a pressing means (not shown) is mounted on the upper surface of the back plate 5. Here, the incompressible fluid referred to in the present invention is, for example, a fluid that is not a fluid that is compressed and greatly reduced in volume when pressurized, such as a gas.
このような、ラバー膜３、剛性リング４及び裏板５等から構成されるラバーチャック部において、ワークＷを研磨する前に、予め空間部６内に非圧縮性の流体２が封入される。この非圧縮性の流体２の封入の際に、ワークＷを保持するラバー膜３のワーク保持部分の表面形状を調整して最適に形成する。その後、不図示の加圧手段を備えた研磨ヘッド上部９が裏板５の上面に装着される。ここで、本発明で言う非圧縮性の流体とは、例えば、気体のように加圧されると圧縮されて体積が大幅に縮小する流体ではない流体のことである。 Here, a commercially available template assembly may be used by attaching a template to the surface of the backing film.
In such a rubber chuck portion composed of the
また、流体２を空間部６内に封入するために、図３に示すように、裏板５に貫通孔１１ａ、１１ｂ、及びカプラー１０ａ、１０ｂを設け、このカプラー１０ａ、１０ｂに後述する流体封入装置を接続可能な構成にすることができる。
Further, in order to enclose the fluid 2 in the space portion 6, as shown in FIG. 3, the back plate 5 is provided with through holes 11a and 11b and couplers 10a and 10b. The apparatus can be configured to be connectable.
このような本発明の研磨ヘッドを用いれば、ワークの研磨中に空間部６内に封入されている非圧縮性の流体２の体積が殆ど変化しないため、上記した最適に形成されたラバー膜３の表面形状の変形、特に、ワークＷとテンプレート７との隙間部分でのラバー膜３の局所的な膨らみを抑制でき、ワーク全体に均一な荷重を掛けてワークＷを研磨できる。その結果、テンプレート７の厚さによらず、ワーク全体を均一に研磨することができる。また、ワークＷの表面にキズ等の表面欠陥を発生させることなく研磨するためにテンプレート７を研磨装置の研磨布に接触させないようにテンプレート７の厚さをワークＷの厚さよりも薄くしても、ワークＷの外周部まで均一に研磨できるので、ワークＷの仕上げ研磨に用いることができる。
When such a polishing head of the present invention is used, the volume of the incompressible fluid 2 enclosed in the space 6 is hardly changed during the polishing of the workpiece, so that the optimally formed rubber film 3 is formed. The deformation of the surface shape, particularly the local swelling of the rubber film 3 in the gap portion between the workpiece W and the template 7 can be suppressed, and the workpiece W can be polished by applying a uniform load to the entire workpiece. As a result, the entire workpiece can be uniformly polished regardless of the thickness of the template 7. Further, in order to polish without causing surface defects such as scratches on the surface of the work W, the thickness of the template 7 may be made thinner than the thickness of the work W so that the template 7 does not come into contact with the polishing cloth of the polishing apparatus. Since the outer periphery of the workpiece W can be uniformly polished, the workpiece W can be used for final polishing.
このとき、非圧縮性の流体を、水又は主成分が水である非圧縮性の流体とすることができる。
このようなものであれば、低コストで構成できる。また、例えば研磨中にラバー膜が裂けるなどした場合のように、非圧縮性の流体が例え空間部から漏れたとしても、ワークや研磨装置の内部を汚染する恐れもない。
また、特にワークが半導体材料の場合には、金属汚染等の防止目的から、非圧縮性の流体として金属イオン等を含まない純水が好適である。 At this time, the incompressible fluid can be water or an incompressible fluid whose main component is water.
If it is such, it can comprise at low cost. Further, even if the incompressible fluid leaks from the space portion, for example, when the rubber film is torn during polishing, there is no possibility of contaminating the inside of the workpiece or the polishing apparatus.
In particular, when the workpiece is a semiconductor material, pure water containing no metal ions or the like is suitable as an incompressible fluid for the purpose of preventing metal contamination and the like.
このようなものであれば、低コストで構成できる。また、例えば研磨中にラバー膜が裂けるなどした場合のように、非圧縮性の流体が例え空間部から漏れたとしても、ワークや研磨装置の内部を汚染する恐れもない。
また、特にワークが半導体材料の場合には、金属汚染等の防止目的から、非圧縮性の流体として金属イオン等を含まない純水が好適である。 At this time, the incompressible fluid can be water or an incompressible fluid whose main component is water.
If it is such, it can comprise at low cost. Further, even if the incompressible fluid leaks from the space portion, for example, when the rubber film is torn during polishing, there is no possibility of contaminating the inside of the workpiece or the polishing apparatus.
In particular, when the workpiece is a semiconductor material, pure water containing no metal ions or the like is suitable as an incompressible fluid for the purpose of preventing metal contamination and the like.
またこのとき、非圧縮性の流体を、ワークの研磨時に用いる研磨剤、又は該研磨剤に含まれる成分の少なくともひとつ以上の成分を有した水溶液とすることもできる。
このようなものであれば、例え、非圧縮性の流体が空間部から漏れたとしても、ワークの研磨特性への影響を最小限に抑制することができる。 At this time, the incompressible fluid can also be an aqueous solution having at least one component of an abrasive used for polishing a workpiece or a component contained in the abrasive.
If it is such, even if an incompressible fluid leaks from a space part, the influence on the grinding | polishing characteristic of a workpiece | work can be suppressed to the minimum.
このようなものであれば、例え、非圧縮性の流体が空間部から漏れたとしても、ワークの研磨特性への影響を最小限に抑制することができる。 At this time, the incompressible fluid can also be an aqueous solution having at least one component of an abrasive used for polishing a workpiece or a component contained in the abrasive.
If it is such, even if an incompressible fluid leaks from a space part, the influence on the grinding | polishing characteristic of a workpiece | work can be suppressed to the minimum.
ここで、空間部内に非圧縮性の流体を封入する方法について説明する。
図２（Ａ）は、ワークの厚さよりも薄いテンプレートを用いる場合の流体の封入方法の一例を示す図である。
図２（Ａ）に示すように、この研磨ヘッド２１には、非圧縮性の流体２を空間部６内に導入及び空間部６内から排出するために裏板５の上面に２つの貫通孔１１ａ、１１ｂが設けられており、非圧縮性の流体２の圧力（以降、封入圧と略すこともある）を保ったまま、空間部６内に非圧縮性の流体２を封入するためにそれぞれの貫通孔１１ａ、１１ｂにカプラー１０ａ、１０ｂが装着されている。そして、ワーク研磨前に空間部６内に非圧縮性の流体２を封入する際には、まず、例えば以下に示すようにして流体封入装置を研磨ヘッドに接続する。 Here, a method for enclosing an incompressible fluid in the space will be described.
FIG. 2A is a diagram illustrating an example of a fluid sealing method when a template thinner than the thickness of the workpiece is used.
As shown in FIG. 2A, the polishing head 21 has two through holes on the upper surface of theback plate 5 for introducing and discharging the incompressible fluid 2 into the space 6. 11a and 11b are provided in order to enclose the incompressible fluid 2 in the space 6 while maintaining the pressure of the incompressible fluid 2 (hereinafter sometimes abbreviated as the enclosing pressure). The couplers 10a and 10b are mounted in the through holes 11a and 11b. When the incompressible fluid 2 is sealed in the space 6 before the workpiece is polished, first, for example, the fluid sealing device is connected to the polishing head as described below.
図２（Ａ）は、ワークの厚さよりも薄いテンプレートを用いる場合の流体の封入方法の一例を示す図である。
図２（Ａ）に示すように、この研磨ヘッド２１には、非圧縮性の流体２を空間部６内に導入及び空間部６内から排出するために裏板５の上面に２つの貫通孔１１ａ、１１ｂが設けられており、非圧縮性の流体２の圧力（以降、封入圧と略すこともある）を保ったまま、空間部６内に非圧縮性の流体２を封入するためにそれぞれの貫通孔１１ａ、１１ｂにカプラー１０ａ、１０ｂが装着されている。そして、ワーク研磨前に空間部６内に非圧縮性の流体２を封入する際には、まず、例えば以下に示すようにして流体封入装置を研磨ヘッドに接続する。 Here, a method for enclosing an incompressible fluid in the space will be described.
FIG. 2A is a diagram illustrating an example of a fluid sealing method when a template thinner than the thickness of the workpiece is used.
As shown in FIG. 2A, the polishing head 21 has two through holes on the upper surface of the
図２（Ａ）に示すように、流体封入装置３０は、非圧縮性の流体２の導入のために圧力計３３とバルブ３２aが接続された回路を有し、該回路の末端にニップル３１ａが接続される。このニップル３１ａは、裏板５に設けられたカプラー１０ａに接続される。さらに流体封入装置３０は、非圧縮性の流体２の排出のために、末端がドレインに接続され、中間にバルブ３２ｂが接続された回路を有している。回路先端にはニップル３１ｂが接続されており、このニップル３１ｂは、裏板５に設けられたカプラー１０ｂに接続される。
As shown in FIG. 2 (A), the fluid sealing device 30 has a circuit in which a pressure gauge 33 and a valve 32a are connected to introduce the incompressible fluid 2, and a nipple 31a is provided at the end of the circuit. Connected. The nipple 31 a is connected to a coupler 10 a provided on the back plate 5. Further, the fluid sealing device 30 has a circuit in which a terminal is connected to the drain and a valve 32b is connected in the middle for discharging the incompressible fluid 2. A nipple 31b is connected to the front end of the circuit, and this nipple 31b is connected to a coupler 10b provided on the back plate 5.
次に、平坦なベース３５上にワークＷあるいはワークＷと同じ厚さの調整板３６を載置し、テンプレート７の下面に該ワークＷとテンプレート７の厚さの差に等しい調整用スペーサー３４を置く。さらに、ベース３５上にバッキングフィルム８、テンプレート７、ラバー膜３、剛性リング４及び裏板５からなる研磨ヘッド部材を、ワークＷあるいは調整板３６がテンプレート７のホール内に収まるように載置する。さらに非圧縮性の流体２を封入する際に裏板５の高さが変わらないようにベース３５と裏板５をクランプ治具３７にて固定する。
Next, a work W or an adjustment plate 36 having the same thickness as the work W is placed on the flat base 35, and an adjustment spacer 34 equal to the difference in thickness between the work W and the template 7 is placed on the lower surface of the template 7. Put. Further, a polishing head member composed of the backing film 8, the template 7, the rubber film 3, the rigid ring 4, and the back plate 5 is placed on the base 35 so that the workpiece W or the adjustment plate 36 is accommodated in the hole of the template 7. . Further, the base 35 and the back plate 5 are fixed by the clamp jig 37 so that the height of the back plate 5 does not change when the incompressible fluid 2 is sealed.
次に、バルブ３２ａ及び３２ｂを開け、空間部６内に非圧縮性の流体２を導入し、空間部６内の気抜きを実施する。この気抜きとして、例えば、バルブ３２ａを閉じてバルブ３２ｂを開け、ドレイン側に減圧回路を接続して行うことができる。
次に、バルブ３２ａ及び３２ｂを閉じて、不図示の非圧縮性の流体２の圧力調整機構によって圧力計３３が所定の圧力になるように調整し、バルブ３２ａを開けて空間部６内に非圧縮性の流体２を導入する。圧力計３３が所定の圧力になっていることを確認して、バルブ３２ａを閉じ、空間部６内に非圧縮性の流体２を封入する。封入後、裏板５の上部に装着されたカプラー１０ａ及び１０ｂからニップル３１ａ及び３１ｂを取り外す。 Next, the valves 32 a and 32 b are opened, theincompressible fluid 2 is introduced into the space 6, and the air in the space 6 is vented. This venting can be performed, for example, by closing the valve 32a and opening the valve 32b and connecting a decompression circuit to the drain side.
Next, the valves 32a and 32b are closed, and the pressure gauge 33 is adjusted to a predetermined pressure by a pressure adjusting mechanism for the non-compressible fluid 2 (not shown), and the valve 32a is opened so that the pressure in thespace 6 is not increased. A compressible fluid 2 is introduced. After confirming that the pressure gauge 33 is at a predetermined pressure, the valve 32 a is closed, and the incompressible fluid 2 is sealed in the space 6. After the sealing, the nipples 31a and 31b are removed from the couplers 10a and 10b mounted on the upper part of the back plate 5.
次に、バルブ３２ａ及び３２ｂを閉じて、不図示の非圧縮性の流体２の圧力調整機構によって圧力計３３が所定の圧力になるように調整し、バルブ３２ａを開けて空間部６内に非圧縮性の流体２を導入する。圧力計３３が所定の圧力になっていることを確認して、バルブ３２ａを閉じ、空間部６内に非圧縮性の流体２を封入する。封入後、裏板５の上部に装着されたカプラー１０ａ及び１０ｂからニップル３１ａ及び３１ｂを取り外す。 Next, the valves 32 a and 32 b are opened, the
Next, the valves 32a and 32b are closed, and the pressure gauge 33 is adjusted to a predetermined pressure by a pressure adjusting mechanism for the non-compressible fluid 2 (not shown), and the valve 32a is opened so that the pressure in the
このとき、ワークとテンプレートとの厚さの差よりも薄い厚さの調整用スペーサー３４を用いて流体２を封入すると、ラバー膜３の表面形状が中央部の膨らみが小さくなるように形成される。このように調整された研磨ヘッドを用いることによって、研磨中のワーク外周部に掛かる圧力が高くなり、外周部の研磨代が大きくなる。逆に、ワークとテンプレートとの厚さの差よりも厚い厚さの調整用スペーサー３４を用いて流体２を封入すると、ラバー膜３の表面形状は中央部の膨らみが大きくなるように形成される。このように調整された研磨ヘッドを用いることによって、研磨中のワーク外周部に掛かる圧力が小さくなり、外周部の研磨代が小さくなる。このようにして流体の封入時に用いる調整用スペーサー３４の厚さを調整することでワーク外周部の研磨代を調整することも可能となる。
At this time, when the fluid 2 is sealed using the adjustment spacer 34 having a thickness smaller than the thickness difference between the workpiece and the template, the surface shape of the rubber film 3 is formed so that the bulge in the central portion is reduced. . By using the polishing head adjusted in this way, the pressure applied to the outer peripheral part of the workpiece during polishing is increased, and the polishing margin of the outer peripheral part is increased. Conversely, when the fluid 2 is sealed using the adjustment spacer 34 having a thickness larger than the thickness difference between the workpiece and the template, the surface shape of the rubber film 3 is formed so that the bulge of the central portion is increased. . By using the polishing head adjusted in this way, the pressure applied to the outer periphery of the workpiece during polishing is reduced, and the polishing allowance of the outer periphery is reduced. In this way, by adjusting the thickness of the adjusting spacer 34 used when the fluid is sealed, it is also possible to adjust the polishing allowance of the outer periphery of the workpiece.
図２（Ｂ）はワークの厚さよりも厚いテンプレートを用いる場合の流体の封入方法の一例を示す図である。この場合には、図２（Ｂ）に示すように、ワークＷの下面に調整用スペーサー３４を挿入し、上記と同様にして非圧縮性の流体２を封入することができる。この場合も調整用スペーサー３４の厚さを調整することでワーク外周部の研磨代を調整することが可能となる。
FIG. 2B is a diagram showing an example of a fluid sealing method when a template thicker than the thickness of the workpiece is used. In this case, as shown in FIG. 2B, the adjustment spacer 34 is inserted into the lower surface of the workpiece W, and the incompressible fluid 2 can be sealed in the same manner as described above. Also in this case, it is possible to adjust the polishing allowance of the work outer peripheral portion by adjusting the thickness of the adjusting spacer 34.
また、ワークの厚さとテンプレートの厚さが等しい場合には、調整用スペーサーを用いないで、非圧縮性の流体２を封入しても良い。
上記したように、テンプレートとワークの厚さの差に応じて、ラバー膜の下面部の膨らみ形状が調整されたものであることが好ましく、このようなものであればワーク外周部の研磨代を調整することができ、ワークの全体をより確実に均一に研磨できる。 Further, when the thickness of the workpiece is equal to the thickness of the template, theincompressible fluid 2 may be enclosed without using the adjustment spacer.
As described above, it is preferable that the bulge shape of the lower surface portion of the rubber film is adjusted according to the difference in thickness between the template and the workpiece. The entire workpiece can be polished more reliably and uniformly.
上記したように、テンプレートとワークの厚さの差に応じて、ラバー膜の下面部の膨らみ形状が調整されたものであることが好ましく、このようなものであればワーク外周部の研磨代を調整することができ、ワークの全体をより確実に均一に研磨できる。 Further, when the thickness of the workpiece is equal to the thickness of the template, the
As described above, it is preferable that the bulge shape of the lower surface portion of the rubber film is adjusted according to the difference in thickness between the template and the workpiece. The entire workpiece can be polished more reliably and uniformly.
また、非圧縮性の流体は、ワークの研磨時の研磨圧力よりも高い圧力で封入されたものであることが好ましい。この封入圧の調整は、例えば上記したような流体封入装置の圧力調整機構を用いて調整できる。
このようなものであれば、ワークの外周部への圧力増加を抑制でき、ワークに対してより均一な研磨荷重でワークを研磨できるものとなる。 The incompressible fluid is preferably sealed at a pressure higher than the polishing pressure at the time of polishing the workpiece. The adjustment of the sealing pressure can be performed using, for example, the pressure adjusting mechanism of the fluid sealing device as described above.
If it is such, the increase in the pressure to the outer peripheral part of a workpiece | work can be suppressed, and a workpiece | work can be grind | polished with a more uniform grinding | polishing load with respect to a workpiece | work.
このようなものであれば、ワークの外周部への圧力増加を抑制でき、ワークに対してより均一な研磨荷重でワークを研磨できるものとなる。 The incompressible fluid is preferably sealed at a pressure higher than the polishing pressure at the time of polishing the workpiece. The adjustment of the sealing pressure can be performed using, for example, the pressure adjusting mechanism of the fluid sealing device as described above.
If it is such, the increase in the pressure to the outer peripheral part of a workpiece | work can be suppressed, and a workpiece | work can be grind | polished with a more uniform grinding | polishing load with respect to a workpiece | work.
また、剛性リングに接着されるラバー膜は、非圧縮性の流体を封入することで上記のように形成された表面形状を維持するため、高い張力で張られることが望ましく、特に、ラバー膜は、３０Ｎ以上の張力で張られた状態で、剛性リングに接着されたものであることが好ましい。
このようなものであれば、ワークの研磨中に非圧縮性の流体の封入後のラバー膜の表面形状を確実に維持でき、ワーク全体をより確実に均一に研磨できるものとなる。 The rubber film bonded to the rigid ring is desirably stretched with high tension in order to maintain the surface shape formed as described above by enclosing an incompressible fluid. , And preferably adhered to a rigid ring in a state of being stretched with a tension of 30 N or more.
With such a configuration, the surface shape of the rubber film after the incompressible fluid is sealed can be reliably maintained during the polishing of the workpiece, and the entire workpiece can be polished more reliably and uniformly.
このようなものであれば、ワークの研磨中に非圧縮性の流体の封入後のラバー膜の表面形状を確実に維持でき、ワーク全体をより確実に均一に研磨できるものとなる。 The rubber film bonded to the rigid ring is desirably stretched with high tension in order to maintain the surface shape formed as described above by enclosing an incompressible fluid. , And preferably adhered to a rigid ring in a state of being stretched with a tension of 30 N or more.
With such a configuration, the surface shape of the rubber film after the incompressible fluid is sealed can be reliably maintained during the polishing of the workpiece, and the entire workpiece can be polished more reliably and uniformly.
また、ラバー膜の材料としては、強靱で高張力にて引っ張っても裂けにくく、非圧縮性の流体を封入することで上記のように形成したラバー膜の表面形状を長期にわたって維持するため、クリープ変形の少ない材料が好ましい。
従って、ラバー膜が、イソプレンゴム、スチレンブタジエンゴム、クロロプレンゴム、ＮＢＲゴム、ウレタンゴム、フッ素ゴム、シリコンゴム、エチレンプロピレンゴム、ポリエステルエラストマー、ポリサルフォン樹脂、グリルアミド樹脂のいずれかひとつの材料から成るものであることが好ましい。
このようなものであれば、ワーク全体をより確実に均一に研磨できるとともに、ラバー膜の寿命を伸ばしてコストを低減できる。 In addition, the material of the rubber film is tough and resistant to tearing even when pulled at high tension, and keeps the surface shape of the rubber film formed as described above by enclosing an incompressible fluid for a long time. A material with less deformation is preferred.
Therefore, the rubber film is made of any one material of isoprene rubber, styrene butadiene rubber, chloroprene rubber, NBR rubber, urethane rubber, fluorine rubber, silicon rubber, ethylene propylene rubber, polyester elastomer, polysulfone resin, and grill amide resin. Preferably there is.
If it is such, it can polish the whole workpiece | work more reliably and uniformly, can extend the lifetime of a rubber film, and can reduce cost.
従って、ラバー膜が、イソプレンゴム、スチレンブタジエンゴム、クロロプレンゴム、ＮＢＲゴム、ウレタンゴム、フッ素ゴム、シリコンゴム、エチレンプロピレンゴム、ポリエステルエラストマー、ポリサルフォン樹脂、グリルアミド樹脂のいずれかひとつの材料から成るものであることが好ましい。
このようなものであれば、ワーク全体をより確実に均一に研磨できるとともに、ラバー膜の寿命を伸ばしてコストを低減できる。 In addition, the material of the rubber film is tough and resistant to tearing even when pulled at high tension, and keeps the surface shape of the rubber film formed as described above by enclosing an incompressible fluid for a long time. A material with less deformation is preferred.
Therefore, the rubber film is made of any one material of isoprene rubber, styrene butadiene rubber, chloroprene rubber, NBR rubber, urethane rubber, fluorine rubber, silicon rubber, ethylene propylene rubber, polyester elastomer, polysulfone resin, and grill amide resin. Preferably there is.
If it is such, it can polish the whole workpiece | work more reliably and uniformly, can extend the lifetime of a rubber film, and can reduce cost.
次に、本発明の研磨装置について説明する。
図４は本発明の研磨装置の一例を示した概略図である。
図４に示すように、本発明の研磨装置２０は、定盤２３上に貼り付けられた研磨布２２と、該研磨布２２上に研磨剤２５を供給するための研磨剤供給機構２４と、ワークＷを保持するための研磨ヘッドとして、上記した本発明の研磨ヘッド２１を有する。この研磨ヘッド２１は、不図示の加圧機構によってワークＷを定盤２３に貼られた研磨布２２に押圧できる構造になっている。 Next, the polishing apparatus of the present invention will be described.
FIG. 4 is a schematic view showing an example of the polishing apparatus of the present invention.
As shown in FIG. 4, the polishingapparatus 20 of the present invention includes an abrasive cloth 22 attached on a surface plate 23, an abrasive supply mechanism 24 for supplying an abrasive 25 onto the abrasive cloth 22, As a polishing head for holding the workpiece W, the polishing head 21 of the present invention described above is provided. The polishing head 21 has a structure in which a work W can be pressed against a polishing cloth 22 affixed to a surface plate 23 by a pressure mechanism (not shown).
図４は本発明の研磨装置の一例を示した概略図である。
図４に示すように、本発明の研磨装置２０は、定盤２３上に貼り付けられた研磨布２２と、該研磨布２２上に研磨剤２５を供給するための研磨剤供給機構２４と、ワークＷを保持するための研磨ヘッドとして、上記した本発明の研磨ヘッド２１を有する。この研磨ヘッド２１は、不図示の加圧機構によってワークＷを定盤２３に貼られた研磨布２２に押圧できる構造になっている。 Next, the polishing apparatus of the present invention will be described.
FIG. 4 is a schematic view showing an example of the polishing apparatus of the present invention.
As shown in FIG. 4, the polishing
そして、研磨剤供給機構２４によって研磨剤２５を研磨布２２上に供給しながら、回転軸に連結された研磨ヘッド２１の自転運動と定盤２３の回転運動によって、ワークＷの表面を摺接して研磨を行う。
このような研磨装置であれば、ワークの研磨中にラバー膜の表面形状の変形、特に、ワークとテンプレートとの隙間部分でのラバー膜の局所的な膨らみを抑制でき、ワーク全体に均一な荷重を掛けてワークを研磨できる。その結果、研磨ヘッドのテンプレートの厚さによらずワーク全体を均一に研磨することができる。また、テンプレートの厚さをワークの厚さより薄くしてもワーク全体を均一に研磨できるので、ワークの仕上げ研磨に適用することもできる。 Then, while supplying the abrasive 25 onto the polishingcloth 22 by the abrasive supply mechanism 24, the surface of the workpiece W is slidably brought into contact with the rotation of the polishing head 21 connected to the rotation shaft and the rotation of the surface plate 23. Polish.
With such a polishing apparatus, deformation of the surface shape of the rubber film during workpiece polishing, especially local swelling of the rubber film in the gap between the workpiece and the template can be suppressed, and a uniform load can be applied to the entire workpiece. The workpiece can be polished by applying As a result, the entire workpiece can be uniformly polished regardless of the thickness of the polishing head template. Further, even if the thickness of the template is made thinner than the thickness of the workpiece, the entire workpiece can be polished uniformly, so that it can also be applied to finish polishing of the workpiece.
このような研磨装置であれば、ワークの研磨中にラバー膜の表面形状の変形、特に、ワークとテンプレートとの隙間部分でのラバー膜の局所的な膨らみを抑制でき、ワーク全体に均一な荷重を掛けてワークを研磨できる。その結果、研磨ヘッドのテンプレートの厚さによらずワーク全体を均一に研磨することができる。また、テンプレートの厚さをワークの厚さより薄くしてもワーク全体を均一に研磨できるので、ワークの仕上げ研磨に適用することもできる。 Then, while supplying the abrasive 25 onto the polishing
With such a polishing apparatus, deformation of the surface shape of the rubber film during workpiece polishing, especially local swelling of the rubber film in the gap between the workpiece and the template can be suppressed, and a uniform load can be applied to the entire workpiece. The workpiece can be polished by applying As a result, the entire workpiece can be uniformly polished regardless of the thickness of the polishing head template. Further, even if the thickness of the template is made thinner than the thickness of the workpiece, the entire workpiece can be polished uniformly, so that it can also be applied to finish polishing of the workpiece.
以下、本発明の実施例及び比較例を示して本発明をより具体的に説明するが、本発明はこれらに限定されるものではない。
Hereinafter, the present invention will be described more specifically with reference to Examples and Comparative Examples of the present invention, but the present invention is not limited to these.
（実施例１－３）
図３に示すような本発明の研磨ヘッドを具備した本発明の研磨装置を用いてワークの研磨を行い、研磨後のワーク面内の研磨代のばらつきを評価した。ワークＷとして、直径３００ｍｍ、厚さ７７５μｍのシリコン単結晶ウェーハを用いた。ここで、研磨代については、平坦度測定器で研磨前後のウェーハの厚さを平坦度保証エリアとして最外周部２ｍｍ幅を除外した領域について測定し、ウェーハの直径方向のクロスセクションでの研磨前後の厚さの差分をとることで算出した。平坦度測定器としては、ＫＬＡ－Ｔｅｎｃｏｒ社製の平坦度測定器（ＷａｆｅｒＳｉｇｈｔ）を用いた。 (Example 1-3)
The workpiece was polished using the polishing apparatus of the present invention equipped with the polishing head of the present invention as shown in FIG. 3, and the variation in the polishing allowance within the workpiece surface after polishing was evaluated. As the workpiece W, a silicon single crystal wafer having a diameter of 300 mm and a thickness of 775 μm was used. Here, with respect to the polishing allowance, the thickness of the wafer before and after polishing was measured with a flatness measuring device in the area excluding the outermost 2 mm width as the flatness guarantee area, and before and after polishing in the cross section in the wafer diameter direction. It was calculated by taking the difference in thickness. As the flatness measuring device, a flatness measuring device (WaferSight) manufactured by KLA-Tencor was used.
図３に示すような本発明の研磨ヘッドを具備した本発明の研磨装置を用いてワークの研磨を行い、研磨後のワーク面内の研磨代のばらつきを評価した。ワークＷとして、直径３００ｍｍ、厚さ７７５μｍのシリコン単結晶ウェーハを用いた。ここで、研磨代については、平坦度測定器で研磨前後のウェーハの厚さを平坦度保証エリアとして最外周部２ｍｍ幅を除外した領域について測定し、ウェーハの直径方向のクロスセクションでの研磨前後の厚さの差分をとることで算出した。平坦度測定器としては、ＫＬＡ－Ｔｅｎｃｏｒ社製の平坦度測定器（ＷａｆｅｒＳｉｇｈｔ）を用いた。 (Example 1-3)
The workpiece was polished using the polishing apparatus of the present invention equipped with the polishing head of the present invention as shown in FIG. 3, and the variation in the polishing allowance within the workpiece surface after polishing was evaluated. As the workpiece W, a silicon single crystal wafer having a diameter of 300 mm and a thickness of 775 μm was used. Here, with respect to the polishing allowance, the thickness of the wafer before and after polishing was measured with a flatness measuring device in the area excluding the outermost 2 mm width as the flatness guarantee area, and before and after polishing in the cross section in the wafer diameter direction. It was calculated by taking the difference in thickness. As the flatness measuring device, a flatness measuring device (WaferSight) manufactured by KLA-Tencor was used.
まず、以下のような研磨ヘッドを準備した。剛性リングとして外径３６０ｍｍ、内径３２０ｍｍのＳＵＳ製のものを用い、ラバー膜として７．５Ｎの張力で厚さ１ｍｍのゴム硬度９０度のシリコンゴムを剛性リングの下面に接着した。ラバー膜の表面には、バッキングフィルムの表面に外径３５５ｍｍ、内径３０２ｍｍ、厚さ７００μｍ（実施例１）、厚さ７８０μｍ（実施例２）、厚さ８００μｍ（実施例３）のテンプレートを貼った市販のテンプレートアセンブリを接着した。
First, the following polishing head was prepared. A rigid ring made of SUS having an outer diameter of 360 mm and an inner diameter of 320 mm was used, and a rubber rubber having a tension of 7.5 N and silicon rubber having a rubber hardness of 90 degrees was bonded to the lower surface of the rigid ring. On the surface of the rubber film, a template having an outer diameter of 355 mm, an inner diameter of 302 mm, a thickness of 700 μm (Example 1), a thickness of 780 μm (Example 2), and a thickness of 800 μm (Example 3) was attached to the surface of the backing film. A commercially available template assembly was glued.
そして、図２（Ａ）に示すように、流体封入装置を用いて非圧縮性の流体を封入した。この際、テンプレートの厚さが７００μｍの場合は７５μｍの調整用スペーサーをテンプレートの下面に挿入し、７８０μｍの場合は調整用スペーサーを用いないで、８００μｍの場合はウェーハの下面に２５μｍの調整用スペーサーを挿入してそれぞれ流体を封入し、非圧縮性の流体として純水を使用し、空間部内に圧力２０ｋＰａで封入した。
この準備した研磨ヘッドを図４に示すような本発明の研磨装置に搭載し、ウェーハを研磨した。尚、使用したウェーハは、その両面に予め一次研磨を施し、エッジ部にも研磨を施したものである。また、定盤は直径８００ｍｍであるものを使用し、研磨布には通常用いられるものを使用した。 Then, as shown in FIG. 2A, an incompressible fluid was sealed using a fluid sealing device. At this time, when the thickness of the template is 700 μm, a 75 μm adjustment spacer is inserted into the lower surface of the template. When the thickness is 780 μm, the adjustment spacer is not used. When the thickness is 800 μm, the adjustment spacer is 25 μm on the lower surface of the wafer. Were inserted to seal the fluid, pure water was used as an incompressible fluid, and the space was sealed at a pressure of 20 kPa.
The prepared polishing head was mounted on the polishing apparatus of the present invention as shown in FIG. 4 to polish the wafer. Note that the used wafer is preliminarily polished on both surfaces thereof and the edge portion is also polished. In addition, a surface plate having a diameter of 800 mm was used, and a commonly used surface was used for the polishing cloth.
この準備した研磨ヘッドを図４に示すような本発明の研磨装置に搭載し、ウェーハを研磨した。尚、使用したウェーハは、その両面に予め一次研磨を施し、エッジ部にも研磨を施したものである。また、定盤は直径８００ｍｍであるものを使用し、研磨布には通常用いられるものを使用した。 Then, as shown in FIG. 2A, an incompressible fluid was sealed using a fluid sealing device. At this time, when the thickness of the template is 700 μm, a 75 μm adjustment spacer is inserted into the lower surface of the template. When the thickness is 780 μm, the adjustment spacer is not used. When the thickness is 800 μm, the adjustment spacer is 25 μm on the lower surface of the wafer. Were inserted to seal the fluid, pure water was used as an incompressible fluid, and the space was sealed at a pressure of 20 kPa.
The prepared polishing head was mounted on the polishing apparatus of the present invention as shown in FIG. 4 to polish the wafer. Note that the used wafer is preliminarily polished on both surfaces thereof and the edge portion is also polished. In addition, a surface plate having a diameter of 800 mm was used, and a commonly used surface was used for the polishing cloth.
また、研磨の際には、研磨剤としてコロイダルシリカを含有するアルカリ溶液を使用し、研磨ヘッドと定盤をそれぞれ３０ｒｐｍで回転させた。ウェーハの研磨荷重（押圧力）は、不図示の加圧手段により、ウェーハ表面の面圧換算で２０ｋＰａとなるように設定し、ウェーハを研磨した。尚、研磨時間はウェーハの平均研磨量が１μｍになるように調整した。
実施例１―３で研磨したウェーハの研磨代分布を図５に示す。図５に示すように、ウェーハの研磨代分布は、後述する比較例１－３と異なりテンプレートの厚さにほとんど依存せず、ほぼ均一な研磨代分布が得られていることが分かる。クロスセクションの研磨代のレンジは、実施例１で０．０４２μｍ、実施例２で０．０２７μｍ、実施例３で０．０４８μｍと後述する比較例１－３と比べ改善されていた。 In polishing, an alkaline solution containing colloidal silica was used as an abrasive, and the polishing head and the surface plate were each rotated at 30 rpm. The polishing load (pressing force) of the wafer was set to 20 kPa in terms of surface pressure on the wafer surface by a not-shown pressurizing means, and the wafer was polished. The polishing time was adjusted so that the average polishing amount of the wafer was 1 μm.
The polishing allowance distribution of the wafer polished in Example 1-3 is shown in FIG. As shown in FIG. 5, it can be seen that the polishing allowance distribution of the wafer hardly depends on the thickness of the template, unlike Comparative Example 1-3 described later, and a substantially uniform polishing allowance distribution is obtained. The range of the cross section polishing allowance was 0.042 μm in Example 1, 0.027 μm in Example 2, and 0.048 μm in Example 3, which was improved compared to Comparative Example 1-3 described later.
実施例１―３で研磨したウェーハの研磨代分布を図５に示す。図５に示すように、ウェーハの研磨代分布は、後述する比較例１－３と異なりテンプレートの厚さにほとんど依存せず、ほぼ均一な研磨代分布が得られていることが分かる。クロスセクションの研磨代のレンジは、実施例１で０．０４２μｍ、実施例２で０．０２７μｍ、実施例３で０．０４８μｍと後述する比較例１－３と比べ改善されていた。 In polishing, an alkaline solution containing colloidal silica was used as an abrasive, and the polishing head and the surface plate were each rotated at 30 rpm. The polishing load (pressing force) of the wafer was set to 20 kPa in terms of surface pressure on the wafer surface by a not-shown pressurizing means, and the wafer was polished. The polishing time was adjusted so that the average polishing amount of the wafer was 1 μm.
The polishing allowance distribution of the wafer polished in Example 1-3 is shown in FIG. As shown in FIG. 5, it can be seen that the polishing allowance distribution of the wafer hardly depends on the thickness of the template, unlike Comparative Example 1-3 described later, and a substantially uniform polishing allowance distribution is obtained. The range of the cross section polishing allowance was 0.042 μm in Example 1, 0.027 μm in Example 2, and 0.048 μm in Example 3, which was improved compared to Comparative Example 1-3 described later.
このように、本発明の研磨ヘッド及び研磨装置を用いることにより、テンプレートの厚さによらず、ウェーハの全体を均一に研磨できることが確認できた。
Thus, it was confirmed that by using the polishing head and the polishing apparatus of the present invention, the entire wafer can be uniformly polished regardless of the thickness of the template.
（比較例１－３）
図１３に示すような本発明の非圧縮性の流体を有さない従来の研磨ヘッドを搭載した図１０に示すような研磨装置を用い、実施例１－３と同様の条件で、シリコン単結晶ウェーハを研磨した。ここで、研磨ヘッドの剛性リング及びテンプレートは実施例１－３と同様のものを用い、ラバー膜としてゴム硬度７０度のシリコンゴムを用い、剛性リングの下面に５Ｎの張力で接着したものを用いた。 (Comparative Example 1-3)
Using a polishing apparatus as shown in FIG. 10 equipped with a conventional polishing head having no incompressible fluid of the present invention as shown in FIG. 13, under the same conditions as in Example 1-3, a silicon single crystal The wafer was polished. Here, the rigid ring and template of the polishing head are the same as those in Example 1-3, silicon rubber having a rubber hardness of 70 degrees is used as the rubber film, and the rubber ring is bonded to the lower surface of the rigid ring with a tension of 5 N. It was.
図１３に示すような本発明の非圧縮性の流体を有さない従来の研磨ヘッドを搭載した図１０に示すような研磨装置を用い、実施例１－３と同様の条件で、シリコン単結晶ウェーハを研磨した。ここで、研磨ヘッドの剛性リング及びテンプレートは実施例１－３と同様のものを用い、ラバー膜としてゴム硬度７０度のシリコンゴムを用い、剛性リングの下面に５Ｎの張力で接着したものを用いた。 (Comparative Example 1-3)
Using a polishing apparatus as shown in FIG. 10 equipped with a conventional polishing head having no incompressible fluid of the present invention as shown in FIG. 13, under the same conditions as in Example 1-3, a silicon single crystal The wafer was polished. Here, the rigid ring and template of the polishing head are the same as those in Example 1-3, silicon rubber having a rubber hardness of 70 degrees is used as the rubber film, and the rubber ring is bonded to the lower surface of the rigid ring with a tension of 5 N. It was.
テンプレートの厚さが７００μｍ（比較例１）、７８０μｍ（比較例２）、８００μｍ（比較例３）のものを用いた場合のそれぞれについて、研磨後のウェーハ面内の研磨代のばらつきを評価した。
比較例１－３で研磨したウェーハの研磨代分布を図６に示す。図６に示すように、ウェーハの研磨代分布は、テンプレートの厚さに強く依存しており、テンプレートの厚さがウェーハの厚さよりも薄い場合には（比較例１）、ウェーハ外周部は過研磨され、逆にテンプレートの厚さがウェーハの厚さより厚い場合には（比較例３）、ウェーハ外周部の研磨代が低下していることが分かる。クロスセクションの研磨代のレンジは、比較例１で０．１８１μｍ、比較例２で０．０６１μｍ、及び比較例３で０．１０４μｍであり、実施例１－３と比べ悪化していた。 For each of the templates having a thickness of 700 μm (Comparative Example 1), 780 μm (Comparative Example 2), and 800 μm (Comparative Example 3), the variation in the polishing allowance in the wafer surface after polishing was evaluated.
The polishing allowance distribution of the wafer polished in Comparative Example 1-3 is shown in FIG. As shown in FIG. 6, the polishing allowance distribution of the wafer strongly depends on the thickness of the template. When the thickness of the template is thinner than the thickness of the wafer (Comparative Example 1), the wafer outer peripheral portion is excessive. On the contrary, when the thickness of the template is thicker than the thickness of the wafer (Comparative Example 3), it can be seen that the polishing margin of the outer peripheral portion of the wafer is reduced. The range of the cross section polishing allowance was 0.181 μm in Comparative Example 1, 0.061 μm in Comparative Example 2, and 0.104 μm in Comparative Example 3, which were worse than those in Example 1-3.
比較例１－３で研磨したウェーハの研磨代分布を図６に示す。図６に示すように、ウェーハの研磨代分布は、テンプレートの厚さに強く依存しており、テンプレートの厚さがウェーハの厚さよりも薄い場合には（比較例１）、ウェーハ外周部は過研磨され、逆にテンプレートの厚さがウェーハの厚さより厚い場合には（比較例３）、ウェーハ外周部の研磨代が低下していることが分かる。クロスセクションの研磨代のレンジは、比較例１で０．１８１μｍ、比較例２で０．０６１μｍ、及び比較例３で０．１０４μｍであり、実施例１－３と比べ悪化していた。 For each of the templates having a thickness of 700 μm (Comparative Example 1), 780 μm (Comparative Example 2), and 800 μm (Comparative Example 3), the variation in the polishing allowance in the wafer surface after polishing was evaluated.
The polishing allowance distribution of the wafer polished in Comparative Example 1-3 is shown in FIG. As shown in FIG. 6, the polishing allowance distribution of the wafer strongly depends on the thickness of the template. When the thickness of the template is thinner than the thickness of the wafer (Comparative Example 1), the wafer outer peripheral portion is excessive. On the contrary, when the thickness of the template is thicker than the thickness of the wafer (Comparative Example 3), it can be seen that the polishing margin of the outer peripheral portion of the wafer is reduced. The range of the cross section polishing allowance was 0.181 μm in Comparative Example 1, 0.061 μm in Comparative Example 2, and 0.104 μm in Comparative Example 3, which were worse than those in Example 1-3.
（実施例４－７）
シリコンゴムを張力５Ｎ（実施例４）、２０Ｎ（実施例５）、３５Ｎ（実施例６）、４８Ｎ（実施例７）の条件にて接着した以外、実施例１と同様の条件でシリコン単結晶ウェーハを研磨し、実施例１と同様に、研磨後のウェーハ面内の研磨代のばらつきを評価した。
実施例４－７で研磨したウェーハの研磨代分布を図７（Ａ）に示す。さらにウェーハの外周部の研磨代分布として、ウェーハ中心より１２０ｍｍから１４８ｍｍまでの範囲の研磨代分布を図７（Ｂ）に示す。図７（Ａ）（Ｂ）に示すように、実施例４－７のいずれの場合もウェーハ外周部まで均一に研磨できていることが分かる。 (Example 4-7)
Silicon single crystal under the same conditions as in Example 1 except that silicon rubber was bonded under the conditions of tension 5N (Example 4), 20N (Example 5), 35N (Example 6), and 48N (Example 7). The wafer was polished, and in the same manner as in Example 1, the variation in the polishing allowance in the polished wafer surface was evaluated.
FIG. 7A shows the polishing allowance distribution of the wafer polished in Example 4-7. Further, as a polishing allowance distribution on the outer peripheral portion of the wafer, a polishing allowance distribution in a range from 120 mm to 148 mm from the wafer center is shown in FIG. As shown in FIGS. 7A and 7B, it can be seen that in any of Examples 4-7, the wafer was uniformly polished to the outer periphery.
シリコンゴムを張力５Ｎ（実施例４）、２０Ｎ（実施例５）、３５Ｎ（実施例６）、４８Ｎ（実施例７）の条件にて接着した以外、実施例１と同様の条件でシリコン単結晶ウェーハを研磨し、実施例１と同様に、研磨後のウェーハ面内の研磨代のばらつきを評価した。
実施例４－７で研磨したウェーハの研磨代分布を図７（Ａ）に示す。さらにウェーハの外周部の研磨代分布として、ウェーハ中心より１２０ｍｍから１４８ｍｍまでの範囲の研磨代分布を図７（Ｂ）に示す。図７（Ａ）（Ｂ）に示すように、実施例４－７のいずれの場合もウェーハ外周部まで均一に研磨できていることが分かる。 (Example 4-7)
Silicon single crystal under the same conditions as in Example 1 except that silicon rubber was bonded under the conditions of tension 5N (Example 4), 20N (Example 5), 35N (Example 6), and 48N (Example 7). The wafer was polished, and in the same manner as in Example 1, the variation in the polishing allowance in the polished wafer surface was evaluated.
FIG. 7A shows the polishing allowance distribution of the wafer polished in Example 4-7. Further, as a polishing allowance distribution on the outer peripheral portion of the wafer, a polishing allowance distribution in a range from 120 mm to 148 mm from the wafer center is shown in FIG. As shown in FIGS. 7A and 7B, it can be seen that in any of Examples 4-7, the wafer was uniformly polished to the outer periphery.
また、ウェーハ外周部の研磨代分布を表わす指標として、ウェーハ中心より１３５ｍｍから１４８ｍｍの研磨代の最大値と最小値の差を求め、それをウェーハの外周部研磨代ばらつきとした。ウェーハの外周部研磨代ばらつきは、実施例４では０．０４３μｍ、実施例５では０．０２７μｍ、実施例６では０．０１６μｍ、実施例７では０．０１１μｍであった。
図８にシリコンゴムの張力とウェーハの外周部研磨代ばらつきの関係を示す。図８に示すように、ゴムの張力が大きいほど、ウェーハの外周部研磨代ばらつきは小さくなっていることが分かる。また、張力が３０Ｎ以上の場合、ウェーハの外周部研磨代ばらつきは０．０２０μｍ以下となり、ウェーハの外周部をより均一に研磨できることが分かる。 Further, as an index representing the polishing margin distribution of the wafer outer peripheral portion, the difference between the maximum value and the minimum value of the polishing margin from 135 mm to 148 mm from the wafer center was obtained, and this was used as the wafer outer peripheral portion polishing margin variation. The variation in the polishing margin of the outer peripheral portion of the wafer was 0.043 μm in Example 4, 0.027 μm in Example 5, 0.016 μm in Example 6, and 0.011 μm in Example 7.
FIG. 8 shows the relationship between the tension of silicon rubber and the variation in the polishing margin of the outer periphery of the wafer. As shown in FIG. 8, it can be seen that the larger the rubber tension is, the smaller the peripheral portion polishing margin variation of the wafer is. In addition, when the tension is 30 N or more, the outer peripheral portion polishing margin variation of the wafer is 0.020 μm or less, which indicates that the outer peripheral portion of the wafer can be polished more uniformly.
図８にシリコンゴムの張力とウェーハの外周部研磨代ばらつきの関係を示す。図８に示すように、ゴムの張力が大きいほど、ウェーハの外周部研磨代ばらつきは小さくなっていることが分かる。また、張力が３０Ｎ以上の場合、ウェーハの外周部研磨代ばらつきは０．０２０μｍ以下となり、ウェーハの外周部をより均一に研磨できることが分かる。 Further, as an index representing the polishing margin distribution of the wafer outer peripheral portion, the difference between the maximum value and the minimum value of the polishing margin from 135 mm to 148 mm from the wafer center was obtained, and this was used as the wafer outer peripheral portion polishing margin variation. The variation in the polishing margin of the outer peripheral portion of the wafer was 0.043 μm in Example 4, 0.027 μm in Example 5, 0.016 μm in Example 6, and 0.011 μm in Example 7.
FIG. 8 shows the relationship between the tension of silicon rubber and the variation in the polishing margin of the outer periphery of the wafer. As shown in FIG. 8, it can be seen that the larger the rubber tension is, the smaller the peripheral portion polishing margin variation of the wafer is. In addition, when the tension is 30 N or more, the outer peripheral portion polishing margin variation of the wafer is 0.020 μm or less, which indicates that the outer peripheral portion of the wafer can be polished more uniformly.
（実施例８、９）
非圧縮性の流体の封入圧の影響について調査を行うため、封入時の圧力を１０ｋＰａ（実施例８）、４０ｋＰａ（実施例９）の条件に設定して純水を封入した研磨ヘッドを用いた以外、実施例７と同様の条件でシリコン単結晶ウェーハを研磨し、実施例７と同様に、研磨後のウェーハ面内の研磨代のばらつきを評価した。
図９に実施例８、９で研磨したウェーハの外周部の研磨代分布を示す。上記のように実施例７のウェーハ外周部の研磨代ばらつきが０．０１１μｍであるのに対して、実施例７の純水封入圧２０ｋＰａよりも低い１０ｋＰａの封入圧の場合である実施例８のウェーハ外周部の研磨代ばらつきは０．０３３μｍと大きくなり、実施例７よりも高い４０ｋＰａの純水封入圧の場合である実施例９のウェーハ外周部の研磨代ばらつきは０．００５μｍと小さくなった。 (Examples 8 and 9)
In order to investigate the influence of the sealing pressure of the incompressible fluid, a polishing head in which pure water was sealed with the pressure at the time of sealing set to 10 kPa (Example 8) and 40 kPa (Example 9) was used. Except for the above, the silicon single crystal wafer was polished under the same conditions as in Example 7, and as in Example 7, the variation in the polishing allowance within the wafer surface after polishing was evaluated.
FIG. 9 shows a polishing margin distribution of the outer peripheral portion of the wafer polished in Examples 8 and 9. As described above, the variation in polishing margin at the outer peripheral portion of the wafer in Example 7 is 0.011 μm, whereas that in Example 8 in which the sealing pressure is 10 kPa lower than the pure water sealing pressure in Example 7 is 20 kPa. The variation in polishing margin on the outer periphery of the wafer was as large as 0.033 μm, and the variation in polishing margin on the outer periphery of the wafer in Example 9 which was 40 kPa higher than that in Example 7 was reduced to 0.005 μm. .
非圧縮性の流体の封入圧の影響について調査を行うため、封入時の圧力を１０ｋＰａ（実施例８）、４０ｋＰａ（実施例９）の条件に設定して純水を封入した研磨ヘッドを用いた以外、実施例７と同様の条件でシリコン単結晶ウェーハを研磨し、実施例７と同様に、研磨後のウェーハ面内の研磨代のばらつきを評価した。
図９に実施例８、９で研磨したウェーハの外周部の研磨代分布を示す。上記のように実施例７のウェーハ外周部の研磨代ばらつきが０．０１１μｍであるのに対して、実施例７の純水封入圧２０ｋＰａよりも低い１０ｋＰａの封入圧の場合である実施例８のウェーハ外周部の研磨代ばらつきは０．０３３μｍと大きくなり、実施例７よりも高い４０ｋＰａの純水封入圧の場合である実施例９のウェーハ外周部の研磨代ばらつきは０．００５μｍと小さくなった。 (Examples 8 and 9)
In order to investigate the influence of the sealing pressure of the incompressible fluid, a polishing head in which pure water was sealed with the pressure at the time of sealing set to 10 kPa (Example 8) and 40 kPa (Example 9) was used. Except for the above, the silicon single crystal wafer was polished under the same conditions as in Example 7, and as in Example 7, the variation in the polishing allowance within the wafer surface after polishing was evaluated.
FIG. 9 shows a polishing margin distribution of the outer peripheral portion of the wafer polished in Examples 8 and 9. As described above, the variation in polishing margin at the outer peripheral portion of the wafer in Example 7 is 0.011 μm, whereas that in Example 8 in which the sealing pressure is 10 kPa lower than the pure water sealing pressure in Example 7 is 20 kPa. The variation in polishing margin on the outer periphery of the wafer was as large as 0.033 μm, and the variation in polishing margin on the outer periphery of the wafer in Example 9 which was 40 kPa higher than that in Example 7 was reduced to 0.005 μm. .
この結果から、非圧縮性の流体の封入圧を高く設定することにより、ウェーハ外周部の研磨代ばらつきが小さくなることが分かった。少なくとも非圧縮性の流体の封入圧をウェーハの研磨荷重よりも高く設定することで、ウェーハの外周部をさらに均一に研磨することが可能となる。
From this result, it was found that by setting the sealing pressure of the incompressible fluid high, the variation in polishing allowance on the outer periphery of the wafer becomes small. By setting the sealing pressure of at least the incompressible fluid higher than the polishing load of the wafer, the outer peripheral portion of the wafer can be polished more uniformly.
なお、本発明は、上記実施形態に限定されるものではない。上記実施形態は例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。
例えば、本発明に係る研磨ヘッドは図１、図３に示した態様に限定されず、例えば、研磨ヘッドの形状等は特許請求の範囲に記載された要件以外については適宜設計すればよい。さらに研磨装置の構成も図４に示したものに限定されず、例えば本発明に係る研磨ヘッドを複数備えた研磨装置とすることもできる。 The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.
For example, the polishing head according to the present invention is not limited to the embodiment shown in FIGS. 1 and 3. For example, the shape and the like of the polishing head may be appropriately designed except for the requirements described in the claims. Further, the configuration of the polishing apparatus is not limited to that shown in FIG. 4, and for example, a polishing apparatus including a plurality of polishing heads according to the present invention may be used.
例えば、本発明に係る研磨ヘッドは図１、図３に示した態様に限定されず、例えば、研磨ヘッドの形状等は特許請求の範囲に記載された要件以外については適宜設計すればよい。さらに研磨装置の構成も図４に示したものに限定されず、例えば本発明に係る研磨ヘッドを複数備えた研磨装置とすることもできる。 The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.
For example, the polishing head according to the present invention is not limited to the embodiment shown in FIGS. 1 and 3. For example, the shape and the like of the polishing head may be appropriately designed except for the requirements described in the claims. Further, the configuration of the polishing apparatus is not limited to that shown in FIG. 4, and for example, a polishing apparatus including a plurality of polishing heads according to the present invention may be used.
Claims (8)
- 少なくとも、環状の剛性リングと、該剛性リングに均一の張力で接着されたラバー膜と、前記剛性リングに結合され、前記ラバー膜と前記剛性リングとともに空間部を形成する裏板と、前記ラバー膜の下面部の周辺部に前記剛性リングと同心に設けられ、ワークのエッジ部を保持する環状のテンプレートとを具備し、前記ラバー膜の下面部に前記ワークの裏面を保持し、該ワークの表面を定盤上に貼り付けられた研磨布に摺接させて研磨する研磨ヘッドにおいて、さらに、前記空間部に封入された非圧縮性の流体を有するものであることを特徴とする研磨ヘッド。 At least an annular rigid ring, a rubber film bonded to the rigid ring with a uniform tension, a back plate coupled to the rigid ring and forming a space with the rubber film and the rigid ring, and the rubber film An annular template provided concentrically with the rigid ring on the periphery of the lower surface portion of the rubber film, and holding an edge portion of the workpiece, and holding the back surface of the workpiece on the lower surface portion of the rubber film, A polishing head that performs polishing by sliding in contact with a polishing cloth affixed on a surface plate, further comprising an incompressible fluid sealed in the space.
- 前記非圧縮性の流体が、水又は主成分が水である非圧縮性の流体であることを特徴とする請求項１に記載の研磨ヘッド。 The polishing head according to claim 1, wherein the incompressible fluid is water or an incompressible fluid whose main component is water.
- 前記非圧縮性の流体が、前記ワークの研磨時に用いる研磨剤、又は該研磨剤に含まれる成分の少なくともひとつ以上の成分を有した水溶液であることを特徴とする請求項１に記載の研磨ヘッド。 2. The polishing head according to claim 1, wherein the incompressible fluid is an aqueous solution having at least one component of a polishing agent used when polishing the workpiece or a component contained in the polishing agent. .
- 前記テンプレートと前記ワークの厚さの差に応じて、前記ラバー膜の下面部の膨らみ形状が調整されたものであることを特徴とする請求項１乃至請求項３のいずれか１項に記載の研磨ヘッド。 4. The bulge shape of the lower surface portion of the rubber film is adjusted according to a difference in thickness between the template and the workpiece. 5. Polishing head.
- 前記非圧縮性の流体は、前記ワークの研磨時の研磨圧力よりも高い圧力で封入されたものであることを特徴とする請求項１乃至請求項４のいずれか１項に記載の研磨ヘッド。 The polishing head according to any one of claims 1 to 4, wherein the incompressible fluid is sealed at a pressure higher than a polishing pressure at the time of polishing the workpiece.
- 前記ラバー膜は、３０Ｎ以上の張力で張られた状態で、前記剛性リングに接着されたものであることを特徴とする請求項１乃至請求項５のいずれか１項に記載の研磨ヘッド。 The polishing head according to any one of claims 1 to 5, wherein the rubber film is bonded to the rigid ring while being stretched with a tension of 30 N or more.
- 前記ラバー膜が、イソプレンゴム、スチレンブタジエンゴム、クロロプレンゴム、ＮＢＲゴム、ウレタンゴム、フッ素ゴム、シリコンゴム、エチレンプロピレンゴム、ポリエステルエラストマー、ポリサルフォン樹脂、グリルアミド樹脂のいずれかひとつの材料から成るものであることを特徴とする請求項１乃至請求項６のいずれか１項に記載の研磨ヘッド。 The rubber film is made of any one material of isoprene rubber, styrene butadiene rubber, chloroprene rubber, NBR rubber, urethane rubber, fluorine rubber, silicon rubber, ethylene propylene rubber, polyester elastomer, polysulfone resin, and grill amide resin. The polishing head according to any one of claims 1 to 6, wherein:
- ワークの表面を研磨する際に使用する研磨装置であって、少なくとも、定盤上に貼り付けられた研磨布と、該研磨布上に研磨剤を供給するための研磨剤供給機構と、前記ワークを保持するための研磨ヘッドとして、請求項１乃至請求項７のいずれか一項に記載の研磨ヘッドを具備するものであることを特徴とする研磨装置。
A polishing apparatus for use in polishing the surface of a workpiece, comprising at least an abrasive cloth affixed on a surface plate, an abrasive supply mechanism for supplying an abrasive onto the abrasive cloth, and the workpiece A polishing apparatus comprising the polishing head according to any one of claims 1 to 7 as a polishing head for holding the surface.
Priority Applications (4)
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| DE112012002493.1T DE112012002493T8 (en) | 2011-06-29 | 2012-05-31 | Polishing head and polishing device |
| CN201280031139.1A CN103619538A (en) | 2011-06-29 | 2012-05-31 | Polishing head and polishing apparatus |
| US14/123,629 US20140113531A1 (en) | 2011-06-29 | 2012-05-31 | Polishing head and polishing apparatus |
| KR1020137034731A KR20140048894A (en) | 2011-06-29 | 2012-05-31 | Polishing head and polishing apparatus |
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| JP2011-143927 | 2011-06-29 | ||
| JP2011143927 | 2011-06-29 |
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| US (1) | US20140113531A1 (en) |
| JP (1) | JPWO2013001719A1 (en) |
| KR (1) | KR20140048894A (en) |
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| DE (1) | DE112012002493T8 (en) |
| TW (1) | TW201318767A (en) |
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2012
- 2012-05-31 DE DE112012002493.1T patent/DE112012002493T8/en not_active Expired - Fee Related
- 2012-05-31 KR KR1020137034731A patent/KR20140048894A/en not_active Application Discontinuation
- 2012-05-31 WO PCT/JP2012/003598 patent/WO2013001719A1/en active Application Filing
- 2012-05-31 CN CN201280031139.1A patent/CN103619538A/en active Pending
- 2012-05-31 US US14/123,629 patent/US20140113531A1/en not_active Abandoned
- 2012-05-31 JP JP2013522705A patent/JPWO2013001719A1/en active Pending
- 2012-06-07 TW TW101120491A patent/TW201318767A/en unknown
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| JP2003025214A (en) * | 2001-07-10 | 2003-01-29 | Ebara Corp | Substrate holding device and substrate polishing device |
| JP2004209613A (en) * | 2003-01-08 | 2004-07-29 | Toshiba Ceramics Co Ltd | Work retaining mechanism for single-side polishing device |
| JP2005161504A (en) * | 2003-12-05 | 2005-06-23 | Toshiba Corp | Polishing head and polishing device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016166928A1 (en) * | 2015-04-16 | 2016-10-20 | 信越半導体株式会社 | Manufacturing method for polishing head, polishing head, and polishing apparatus |
| JP2016203270A (en) * | 2015-04-16 | 2016-12-08 | 信越半導体株式会社 | Manufacturing method for polishing head, polishing head and polishing device |
| CN107427989A (en) * | 2015-04-16 | 2017-12-01 | 信越半导体株式会社 | Manufacture method, grinding head and the lapping device of grinding head |
| KR20170138406A (en) * | 2015-04-16 | 2017-12-15 | 신에쯔 한도타이 가부시키가이샤 | A manufacturing method of a polishing head, a polishing head, and a polishing apparatus |
| US10464189B2 (en) | 2015-04-16 | 2019-11-05 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing polishing head, polishing head, and polishing apparatus |
| KR102317974B1 (en) | 2015-04-16 | 2021-10-28 | 신에쯔 한도타이 가부시키가이샤 | Polishing head manufacturing method, polishing head, and polishing apparatus |
| KR20200133752A (en) | 2018-04-05 | 2020-11-30 | 신에쯔 한도타이 가부시키가이샤 | Polishing head and wafer polishing method |
| WO2022264687A1 (en) * | 2021-06-16 | 2022-12-22 | 株式会社Sumco | Polishing head, polishing device, and production method for semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112012002493T8 (en) | 2014-06-12 |
| KR20140048894A (en) | 2014-04-24 |
| DE112012002493T5 (en) | 2014-03-27 |
| JPWO2013001719A1 (en) | 2015-02-23 |
| US20140113531A1 (en) | 2014-04-24 |
| TW201318767A (en) | 2013-05-16 |
| CN103619538A (en) | 2014-03-05 |
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