CN110364463A - A kind of silicon wafer processing unit and method - Google Patents
A kind of silicon wafer processing unit and method Download PDFInfo
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- CN110364463A CN110364463A CN201910675241.9A CN201910675241A CN110364463A CN 110364463 A CN110364463 A CN 110364463A CN 201910675241 A CN201910675241 A CN 201910675241A CN 110364463 A CN110364463 A CN 110364463A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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Abstract
The embodiment of the invention provides a kind of silicon wafer processing unit and method, silicon wafer processing unit includes: ring mould；Rubbing head, comprising: center control zone and the marginal zone being arranged around center control zone, the marginal zone of rubbing head and the axial end face of ring mould are fitted and connected；The center control zone of rubbing head is provided with adjustment structure；The mold pad being independently arranged in ring mould ring and with ring mould, the first end face of mold pad is fitted and connected with adjustment structure, adjustment structure is moved along the axial of rubbing head to first direction or the second direction opposite with first direction for driven mold pad, to adjust the difference in height between ring mould and mold pad, the inner wall of the second end face and ring mould that are oppositely arranged on mold pad with first end face forms accommodation space, and silicon wafer is placed in accommodation space and the first end face of silicon wafer and the second end face of mold pad are fitted and connected.It can prevent silicon wafer from generating edge tilting or turned-down edge phenomenon during the grinding process in this way, improve the flatness of silicon wafer.
Description
Technical field
The present invention relates to the field of final polissoir processing silicon wafer, in particular to a kind of silicon wafer processing unit and method.
Background technique
In the process of lapping of silicon wafer (such as: in the final polishing process of silicon wafer), due to for adsorbing and fettering silicon
The unreasonable structure of the composable mold pad of piece, the edge that often will appear silicon wafer tilt and the phenomenon that turned-down edge.
Summary of the invention
The embodiment of the invention provides a kind of silicon wafer processing unit and methods, to solve to stick up at the edge of silicon chip grinding process
It rises and the problem of turned-down edge.
In a first aspect, in order to solve the above-mentioned technical problem, the embodiment of the invention provides a kind of silicon wafer processing unit, packets
It includes:
Ring mould；
Rubbing head, comprising: center control zone and the marginal zone being arranged around the center control zone, the side of the rubbing head
Edge area and the axial end face of the ring mould are fitted and connected；The center control zone of rubbing head is provided with adjustment structure；
The mold pad being independently arranged in the ring mould ring and with the ring mould, the first of the mold pad
End face is fitted and connected with the adjustment structure, the adjustment structure be used to driving the mold pad along the rubbing head it is axial to
First direction or second direction opposite to the first direction movement, to adjust between the ring mould and the mold pad
Difference in height, the inner wall of the second end face and the ring mould that are oppositely arranged on the mold pad with first end face, which is formed, to be accommodated
Space, silicon wafer is placed in the accommodation space and the first end face of the silicon wafer with the second end face of the mold pad is bonded company
It connects.
Optionally, the adjustment structure includes:
Servo motor；
Chuck, one end of the chuck are connect with the servo motor, the other end of the chuck and the mold pad
First end face is fitted and connected.
Optionally, concave inward structure has been arranged radially on the inside of the ring mould and along the ring mould.
Optionally, the inner wall of the ring mould is provided with the coating for preventing the silicon wafer from scratching.
Optionally, on the ring mould axial direction, the thickness in the coated center region is greater than fringe region
Thickness.
Optionally, silicon wafer processing unit further include:
For transporting the transplantation device of silicon wafer, thickness measuring device is provided on the transplantation device, the thickness measuring device is for surveying
Measure the thickness of silicon wafer.
Optionally, the silicon wafer processing unit further include: control module, the control module and the adjustment structure connect
It connects；
The control module is used to determine the thickness of silicon wafer；
The control module is used for according between the thickness and the preset ring mould and the mold pad of silicon wafer
Difference in height and silicon wafer thickness corresponding relationship, to the adjustment structure send control signal, the control signal be used for control institute
State the difference in height between ring mould and the mold pad.
Second aspect, the embodiment of the invention also provides a kind of silicon slice processing methods, are applied at silicon wafer as described above
Manage device, the silicon wafer processing unit further include: control module, the control module are connect with the adjustment structure；
The grinding method of the silicon wafer includes:
Determine the thickness of silicon wafer；
According to the difference in height and silicon wafer thickness between the thickness of silicon wafer and the preset ring mould and the mold pad
Corresponding relationship is spent, the difference in height between the ring mould and the mold pad is adjusted；
The silicon wafer is placed in the accommodation space, the second end face of the first surface of the silicon wafer and the mold pad
It is fitted and connected；
Adjust the position of the rubbing head so that the second surface being oppositely arranged on the silicon wafer with the first surface with
The polishing pad contact；
The rubbing head drives the silicon wafer rotation and/or polishing disk rotation, to the second surface of the silicon wafer into
Row milled processed.
Optionally, the control module is connect with thickness measuring device；
The method also includes:
The thickness measuring device detects the thickness of the silicon wafer, and the thickness for the silicon wafer that will test is sent to the control
Module.
Optionally, the height between the thickness and the preset ring mould and the mold pad according to silicon wafer
Degree difference and silicon wafer thickness corresponding relationship, adjust the difference in height between the ring mould and the mold pad, comprising:
According to the difference in height and silicon wafer thickness between the thickness of silicon wafer and the preset ring mould and the mold pad
Corresponding relationship is spent, determines that the object height between the ring mould and the mold pad is poor；
Control signal is sent to the adjustment structure, the control signal is used for the ring mould and the mold pad
Between difference in height to be adjusted to object height poor.
The embodiment of the present invention has the following beneficial effects:
In embodiments of the present invention, the mold pad can be driven to transport to first direction or second direction by adjusting structure
It is dynamic, and then the difference in height between the mold pad and the ring mould can be adjusted according to the thickness of silicon wafer, it can protect in this way
The difference in height between the mold pad and the ring mould is demonstrate,proved in reasonable range, final realize adds the accurate of silicon wafer
Work prevents silicon wafer from generating edge during the grinding process and tilts or the phenomenon that turned-down edge, and then improves the flatness of the silicon wafer.
Detailed description of the invention
Fig. 1 is one of the structural schematic diagram of the silicon wafer processing unit of the embodiment of the present invention；
Fig. 2 is the second structural representation of the silicon wafer processing unit of the embodiment of the present invention；
Fig. 3 is relevant silicon wafer processing unit schematic diagram；
Fig. 4 is one of ring mould and structural schematic diagram of mold pad of the embodiment of the present invention；
Fig. 5 is the ring mould of the embodiment of the present invention and the second structural representation of mold pad；
Fig. 6 is the structural schematic diagram of silicon wafer；
Fig. 7 is the third structural representation of the silicon wafer processing unit of the embodiment of the present invention；
Fig. 8 is the flow diagram of the silicon slice processing method of the embodiment of the present invention.
Specific embodiment
To keep the technical problem to be solved in the present invention, technical solution and advantage clearer, below in conjunction with attached drawing and tool
Body embodiment is described in detail.
Term " first ", " second " in description and claims of this specification etc. are for distinguishing similar right
As without being used to describe a particular order or precedence order.It should be understood that the data used in this way in the appropriate case can be with
It exchanges, so that the embodiment of the present invention described herein for example can be with suitable other than those of illustrating or describing herein
Sequence is implemented.
Referring to Fig. 1 and Fig. 2, the embodiment of the invention provides a kind of silicon wafer processing unit 1, which can be with
For final polishing machine, which includes: rubbing head 11, ring mould 12 and mold pad 13.
Wherein, the rubbing head 11 include: center control zone 111 and around the center control zone 111 setting edge
Area 112, the marginal zone 112 of the rubbing head and the axial end face of the ring mould 12 are fitted and connected；In rubbing head 11
Heart control zone 111 is provided with adjustment structure 113；The mold pad 13 be located in 12 ring of ring mould and with the circular die
Tool 12 is independently arranged, and the first end face of the mold pad is fitted and connected with the adjustment structure 113, and the adjustment structure 113 is used
It is transported along the axial of the rubbing head to first direction or second direction opposite to the first direction in the drive mold pad
It is dynamic, to adjust the difference in height between the ring mould and the mold pad；It is opposite with first end face on the mold pad 13 to set
The inner wall of the second end face and the ring mould 12 set forms accommodation space 121, and silicon wafer 2 is placed in the accommodation space 121
And the first end face of the silicon wafer 2 and the second end face of the mold pad 13 are fitted and connected.
Show that the difference in height between ring mould 12 and mold pad 13 will affect the grinding effect of silicon wafer 2 by experimental study
Fruit.Wherein, the difference in height between ring mould 12 and mold pad 13 can guarantee for silicon wafer 2 to be strapped in ring mould 12.If
The excessive edge that will cause silicon wafer 2 difference in height D between mold and mold pad 13 tilts；If the height between mold and mold pad 13
Difference D is too small will cause 2 edge turned-down edge of silicon wafer for degree.Therefore, in order to guarantee the grinding effect of silicon wafer 2, need to guarantee the circular die
The difference in height of 12 pad of tool and mold is in reasonable range.
In embodiments of the present invention, the first direction can be for along the direction axially downwardly of the rubbing head 11, institute
Stating second direction can be for along the direction axially upwards of the rubbing head 11.It is understood that when adjustment structure 113 drives
When the mold pad 13 is moved to first direction, the height subtractive between the ring mould 12 and mold pad 13 can be made
It is small；When adjusting structure 113 mold pad being driven to move to second direction, can make the ring mould and mold pad it
Between difference in height increase.
It should be noted that the difference in height between the ring mould 12 and the mold pad 13 is the accommodation space
121 height, it is to be understood that the embodiment of the present invention is to the difference in height between the ring mould 12 and the mold pad 13
Restriction can be equally used for the restriction of the height to the accommodation space 121.
In embodiments of the present invention, the adjustment structure 113 is mainly used for fixing the mold pad and drives the mould
Tool pad is moved to first direction or second direction, to adjust the difference in height between the ring mould and the mold pad.It is described
Adjust structure 113 embodiment can there are many, just illustrated below with one of which.
In some embodiments, the adjustment structure 113 includes: servo motor 1131 and chuck 1132；It is wherein described
For servo motor 1131 for providing kinetic energy, the servo motor 1131 can be linear servo-motor 1131.The chuck 1132
For fixing the mold pad, one end of the chuck 1132 is connect with the servo motor 1131, the chuck 1132 it is another
One end and the first end face of the mold pad are fitted and connected.
In embodiments of the present invention, the chuck 1132 can be driven to first direction or second by servo motor 1131
Direction movement, is moved by 1132 driven mold pad of chuck to first direction or second direction, to adjust the mold pad and ring
Difference in height between shape mold.
Further, the material of the chuck 1132 can be rubber, be of course not solely limited to this.
It should be noted that the description of the above related specific structure for adjusting structure 113 is example and non-limiting,
It is understood that not limiting the specific constructive form of the adjustment structure 113 specifically in embodiments of the present invention.
Wherein, the inner wall of the ring mould 12 needs to match with the edge of silicon wafer 2, such as: 2 edge of silicon wafer is fillet
(R-Type) or trapezoidal angle (T-Type), the inner wall for passing through the ring mould 12 in this way can hold onto silicon wafer 2, guarantee
It is not fallen out in the process of lapping of silicon wafer 2.Further, the mold pad 13 can be with the inner surface of the ring mould 12
Match, such as: the shape of the mold pad 13 can be cylinder, be of course not solely limited to this.
It should be noted that the shape of the accommodation space 121 needs to match with the shape of silicon wafer 2.
In embodiments of the present invention, it is inhaled by the accommodation space 121 that the ring mould 12 and the mold pad 13 are formed
The ring mould can be individually replaced by the way that ring mould 12 and the mold pad 13 to be independently arranged by echoing constraint silicon wafer 2
12 or the mold pad 13, it can be to avoid the waste problem of ring mould 12 described in replacement process or the mold pad 13.
In embodiments of the present invention, the mold pad can be driven to first direction or second party by adjusting structure 113
To movement, and then the difference in height between the mold pad 13 and the ring mould 12 can be adjusted according to the thickness of silicon 2, in this way
It can guarantee the difference in height between the mold pad 13 and the ring mould 12 in reasonable range, final realization is to silicon wafer
2 accurate processing prevents silicon wafer 2 from generating edge during the grinding process and tilts or the phenomenon that turned-down edge, and then improves the silicon wafer
Flatness.
In some embodiments, the material of the mold pad 13 is polyurethane, and polyurethane material has excellent shearing resistance
Shearing stress and impact property, being suitable for various structural bonding fields can by the way that the material of mold pad 13 is selected as polyurethane
To adsorb silicon wafer 2 well.
In some embodiments, the material of the ring mould 12 can be ceramics, wherein ceramics refer to natural or
Compound is synthesized by one kind inorganic non-metallic material made of forming and high temperature sintering.It has high-melting-point, high rigidity, height resistance to
The advantages that mill property, resistance to oxidation.By the way that the material of ring mould 12 is selected as ceramics, on the one hand it can guarantee ring mould 12 always
It is fixedly attached on rubbing head 11, on the other hand can greatly prolong the service life of ring mould 12.
If the material of the ring mould 12 is selected as epoxy glass fiber (Epoxy Glass), due to expoxy glass fibre
Tie up that no ceramic material is wear-resisting, so that its period choosing for replacing the ring mould 12 is shorter than material to replace the ring when ceramics
The period of shape mold 12.It is understood that the wearability of the ring mould 12 of ceramics is much better than the annular of epoxy glass fiber
The service life of mold 12, ceramic ring mould 12 is longer than the ring mould 12 of epoxy glass fiber.To sum up, ceramic circular die
Ring mould 12 of the performance of tool 12 far better than epoxy glass fiber.
In addition, since the wearability of the ring mould 12 of epoxy glass fiber is poor, in the continuous processing of silicon wafer 2, ring
The thickness of shape mold 12 can be easy to be thinned, and can eventually make since the difference in height D between mold pad 13 and ring mould 12 is too small
At the edge turned-down edge of silicon wafer 2.Since the wearability of ceramics is better than the wearability of epoxy glass fiber, by the material of ring mould 12
Matter is selected as ceramics, can also reduce the edge turned-down edge phenomenon of silicon wafer 2 to a certain extent.
It should be noted that there are many connection types between mold pad 13 and ring mould 12, if will be according to shown in Fig. 3
Mold pad 13 and ring mould 12 is arranged in mode, wherein the loading end of the first end face of the mold pad 13 and the rubbing head 11
It is fitted and connected, the axial end face of the ring mould 12 and the second end face of the mold pad 13 are fitted and connected, and the silicon wafer 2 is set
In in the ring of the ring mould 12.Since ring mould 12 can gradually be thinned in the process of lapping of silicon wafer 2, and mold pad
Difference in height D between 13 and ring mould 12, which crosses to become smaller, will cause the edge turned-down edge of silicon wafer 2.In this way, in order to solve
The edge turned-down edge problem of silicon wafer 2, needs to replace mold pad 13 and ring mould 12 simultaneously, however the service life of mold pad 13 is longer than
Ring mould 12 can waste a large amount of grinding pad in this way.
In order to solve the problems of connection type shown in Fig. 3, the silicon wafer processing unit 1 of the embodiment of the present invention passes through
The ring mould 12 and mold pad 13 are independently arranged, are unable to satisfy in the difference in height of ring mould 12 and mold pad 13
When grinding requires, only replacement mold pad 13 can not be had to by replacement ring mould 12, so as to reduce the waste of grinding pad.
In embodiments of the present invention, the ring mould 12 can be attached to the edge of the rubbing head 11 by double faced adhesive tape
In area 112.Similarly, the mold pad 13 can be fitted in the adjustment structure 113 by double-sided adhesive.
Referring to fig. 4 and Fig. 5, the inner wall of the ring mould 12 and 2 EDGE CONTACT of silicon wafer may be to silicon wafers 2 in order to prevent
Edge causes to damage, and the inner surface of the ring mould 12 is provided with scratch resistant coating 122.
Such as: the material of the coating 122 can be the organic matters such as polyether-ether-ketone, fluoropolymer or expoxy glass.It needs
Illustrate, the above description in relation to 122 material of coating is example and non-limiting, it is to be understood that the embodiment of the present invention
In specifically limit coating 122 material.
Corresponding, the inner wall of the ring mould 12 can in an uniform way or coating 122 is arranged in heterogeneous fashion, can be with
Understand, if coating 122 is arranged in an uniform way, the thickness of each region of the coating 122 is consistent.Certainly,
Can also different-thickness be set by the coating 122 of different zones according to actual needs.
Further, the edge of silicon wafer 2 can be fillet (R-Type) or trapezoidal angle (T-Type).Referring to Fig. 6, with silicon
The edge of piece 2 be fillet for, the edge of silicon wafer 2 can be divided into 22 (Upper of central part 21 (Top) and marginal portion
Bevel or Lower Bevel), since the time of contact at the edge and the inner wall of ring mould 12 of silicon wafer 2 is different, and silicon
The central part 21 of piece 2 and the time of contact of the inner wall of ring mould 12 be it is longest, will lead to the central part of silicon wafer 2 in this way
The abrasion loss of the inner wall of ring mould 12 at 21 is larger.In view of the abrasion of 12 inner wall different location of ring mould is also different,
The thickness of 122 central area of coating can be set greater than marginal zone on the axial direction of the ring mould 12
The thickness in domain.
Further, the inner wall of the ring mould 12 and it has been arranged radially concave inward structure along the ring mould 12,
Coating 122, the service life of Lai Yanchang coating 122 can locally be thickeied.
In addition, the embodiment of the invention also provides another silicon wafer processing unit, institutes on the basis of the embodiment of the present invention
State silicon wafer processing unit further include: control module (not shown), the control module are connect with the adjustment structure 113.
The control module is used to determine the thickness of silicon wafer, and according to the thickness of silicon wafer and the preset ring mould and institute
The difference in height and silicon wafer thickness corresponding relationship between mold pad are stated, sends control signal, the control to the adjustment structure 113
Signal is used to control the difference in height between the ring mould and the mold pad.
Further, it is determined for the ease of the thickness according to silicon wafer high between the ring mould 12 and the mold pad 13
It is poor to spend, on the basis of the above embodiments, the silicon wafer processing unit further include: for transporting the transplantation device of silicon wafer, in institute
It states and is provided with thickness measuring device on transplantation device, the thickness measuring device is used to measure the thickness of silicon wafer.
Optionally, the control module is further used for: according to the thickness of silicon wafer and the preset ring mould and
Difference in height and silicon wafer thickness corresponding relationship between the mold pad, determine the mesh between the ring mould and the mold pad
Mark difference in height；Control signal is sent to the adjustment structure 113, the control signal is used for the ring mould and the mould
It is poor that difference in height between tool pad is adjusted to object height.
In embodiments of the present invention, by the way that the material of ring mould 12 is selected as ceramics, ring mould 12 can be extended
Service life.By the way that the ring mould 12 and mold pad 13 to be independently arranged, when needing replacing ring mould 12, it is only necessary to replace
Ring mould 12 does not need replacement mold pad 13, can extend the service life of mold pad 13.By guaranteeing 12 He of ring mould
In the reasonable scope, the problem of can solve the edge turned-down edge of silicon wafer 2, silicon wafer 2 can be improved in difference in height between mold pad 13
Flatness.
Meanwhile 12 inner wall of ring mould scratches silicon chip edge in order to prevent, is arranged in the ring of the ring mould 12
The coating 122 for preventing silicon chip edge from scratching, and according to the abrasion of different location difference, by the inner wall of the ring mould 12 and
It has been arranged radially concave inward structure along the ring mould 12, locally to thicken coating 122, and then coating 122 can have been extended
Service life.
In order to solve the problems, such as that silicon wafer 2 generates edge tilting during the grinding process or turned-down edge, the embodiment of the present invention also provide
A kind of silicon slice processing method, the implementation principle of the silicon slice processing method is identical as the implementation principle of silicon wafer processing unit 1, similar
Place repeats no more.
Referring to Fig. 7, which is applied to silicon wafer processing unit 1 as described above, in addition to this, silicon wafer processing
Device 1 further include: polishing disk 15 is provided with polishing pad 151 on the polishing disk 15.Pass through polishing pad 151 (pad) and polishing
Liquid (Slurry) polishes silicon wafer 2 (wafer), can prevent the burnishing surface of silicon wafer 2 from first time particle contamination occurs, simultaneously
The flatness of silicon wafer 2 can be improved.
Referring to Fig. 8, the embodiment of the invention also provides a kind of silicon slice processing methods, are applied to silicon wafer as described above and handle
Device, the silicon wafer processing unit further include: control module, the control module are connect with the adjustment structure 113.Wherein silicon
Piece processing method is shown in specific step is as follows:
Step 801: determining the thickness of silicon wafer；
In embodiments of the present invention, the silicon wafer processing unit further include: thickness measuring device, the thickness measuring device is for measuring silicon wafer
Thickness, can by the thickness measuring device be arranged on transplantation device, the control module is connect with thickness measuring device.
Before step 801, the method also includes: the thickness measuring device detects the thickness of the silicon wafer, and will test
The thickness of the silicon wafer be sent to the control module.
Wherein, silicon wafer can be transferred to next abrasive disk by the transplantation device, by being arranged on transplantation device
Thickness measuring device measures the thickness of silicon wafer, and the thickness for the silicon wafer having determined is sent to control module by thickness measuring device；Then institute
State control module can according to the silicon wafer thickness having determined, adjust next time grind used by rubbing head ring mould and
Difference in height between mold pad, and then can guarantee the difference in height described in each process of lapping between ring mould and mold pad
In the reasonable scope, the phenomenon that avoiding the occurrence of the edge tilting or turned-down edge of silicon wafer, can be improved the flatness of silicon wafer.
Step 802: according to the difference in height between the thickness of silicon wafer and the preset ring mould and the mold pad
With silicon wafer thickness corresponding relationship, the difference in height between the ring mould and the mold pad is adjusted；
In embodiments of the present invention, the preset difference in height is related with the thickness of the silicon wafer 2.The ring mould and
Difference in height between the mold pad needs to guarantee to be not in showing for tilting and edge turned-down edge in the process of lapping of silicon wafer 2
As.The corresponding relationship of difference in height and silicon wafer thickness between the preset ring mould and the mold pad can be by multiple
Test obtains.Wherein can be by grinding effect of the testing inspection same piece of silicon thickness under different height difference, and select grinding
Effect preferably when corresponding difference in height.
Further, according to the height between the thickness of silicon wafer and the preset ring mould and the mold pad
Difference and silicon wafer thickness corresponding relationship, determine that the object height between the ring mould and the mold pad is poor；To the adjustment
Structure 113 sends control signal, and the control signal is used for the difference in height tune between the ring mould and the mold pad
Whole is that object height is poor.
The object height difference is related with the thickness of the silicon wafer 2.The grinding corresponding to the silicon wafer with a thickness of A μm
Optimal height difference between pad and the ring mould 12 is that A+ △ Y μm, △ Y is relatively fixed value, and △ Y is test of many times
Resulting empirical value.When to grinding with a thickness of B μm of silicon wafer, B+ △ Y μm can be set by the object height difference.
Step 803: silicon wafer 2 being placed in the accommodation space 121, the first surface and the mold pad of the silicon wafer 2
13 second end face is fitted and connected；
In embodiments of the present invention, by by the second end face of the first surface of the silicon wafer 2 and the mold pad 13 into
Row is fitted and connected, and silicon wafer 2 may be implemented when rubbing head 11 is mobile and follow rubbing head 11 mobile, while when rubbing head 11 rotates
It can also realize that silicon wafer 2 follows rubbing head 11 to rotate.
Step 804: the position of the rubbing head 11 is adjusted, so that being oppositely arranged on the silicon wafer 2 with the first surface
Second surface contacted with the polishing pad 151；
Step 805: the rubbing head 11 drives the rotation of silicon wafer 2 and/or the polishing disk 15 to rotate, to the silicon wafer
2 second surface is ground.
In embodiments of the present invention, the milled processed can be understood as initial stage milled processed or final polishing treatment,
Tool does not limit the type of the milled processed in the embodiment of the present invention.
In embodiments of the present invention, the silicon slice processing method is the thickness by control module according to silicon wafer, and pre-
If the ring mould and the mold pad between difference in height and silicon wafer thickness corresponding relationship, and to the adjustment structure
113 send control signal, and the control signal is used to control the difference in height between the ring mould and the mold pad, in this way
The silicon slice processing method can guarantee the difference in height between the ring mould described in each process of lapping and the mold pad
In reasonable range, the edge for avoiding the occurrence of silicon wafer tilts or the phenomenon that turned-down edge, the flatness of silicon wafer can be improved.Together
When, silicon slice processing method through the embodiment of the present invention can be to the difference in height between the ring mould and the mold pad
It is automatically adjusted, high degree of automation.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, it can also make several improvements and retouch, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of silicon wafer processing unit characterized by comprising
Ring mould；
Rubbing head, comprising: center control zone and the marginal zone being arranged around the center control zone, the marginal zone of the rubbing head
It is fitted and connected with the axial end face of the ring mould；The center control zone of rubbing head is provided with adjustment structure；
The mold pad being independently arranged in the ring mould ring and with the ring mould, the first end face of the mold pad
It is fitted and connected with the adjustment structure, the adjustment structure is used to drive the mold pad along the axial to first of the rubbing head
Direction or second direction opposite to the first direction movement, to adjust the height between the ring mould and the mold pad
It is poor to spend, and the inner wall of the second end face and the ring mould that are oppositely arranged on the mold pad with first end face, which is formed, accommodates sky
Between, silicon wafer is placed in the accommodation space and the first end face of the silicon wafer and the second end face of the mold pad are fitted and connected.
2. silicon wafer processing unit according to claim 1, which is characterized in that the adjustment structure includes:
Servo motor；
Chuck, one end of the chuck are connect with the servo motor, and the first of the other end of the chuck and the mold pad
End face is fitted and connected.
3. silicon wafer processing unit according to claim 1, which is characterized in that on the inside of the ring mould and along the annular
Mold has been arranged radially concave inward structure.
4. silicon wafer processing unit according to claim 1, which is characterized in that the inner wall of the ring mould is provided with and prevents
The coating that the silicon wafer scratches.
5. silicon wafer processing unit according to claim 4, which is characterized in that on the ring mould axial direction, institute
The thickness for stating coated center region is greater than the thickness of fringe region.
6. silicon wafer processing unit according to claim 1, which is characterized in that further include:
For transporting the transplantation device of silicon wafer, thickness measuring device is provided on the transplantation device, the thickness measuring device is for measuring silicon
The thickness of piece.
7. silicon wafer processing unit according to claim 1, which is characterized in that the silicon wafer processing unit further include: control
Module, the control module are connect with the adjustment structure；
The control module is used to determine the thickness of silicon wafer；
The control module is used for according to the height between the thickness and the preset ring mould and the mold pad of silicon wafer
Degree difference and silicon wafer thickness corresponding relationship send control signal to the adjustment structure, and the control signal is for controlling the ring
Difference in height between shape mold and the mold pad.
8. a kind of silicon slice processing method, which is characterized in that be applied to silicon wafer as described in any one of claims 1 to 7 processing dress
It sets, the silicon wafer processing unit further include: control module, the control module are connect with the adjustment structure；
The silicon slice processing method includes:
Determine the thickness of silicon wafer；
According to the difference in height and silicon wafer thickness pair between the thickness of silicon wafer and the preset ring mould and the mold pad
It should be related to, adjust the difference in height between the ring mould and the mold pad；
The silicon wafer is placed in the accommodation space, the first surface of the silicon wafer is bonded with the second end face of the mold pad
Connection；
Adjust the position of the rubbing head so that the second surface being oppositely arranged on the silicon wafer with the first surface with it is described
Polishing pad contact；
The rubbing head drives the silicon wafer rotation and/or polishing disk rotation, grinds to the second surface of the silicon wafer
Mill processing.
9. control method according to claim 8, which is characterized in that the control module is connect with thickness measuring device；
The method also includes:
The thickness measuring device detects the thickness of the silicon wafer, and the thickness for the silicon wafer that will test is sent to the control mould
Block.
10. control method according to claim 8, which is characterized in that the thickness according to silicon wafer and preset institute
The difference in height and silicon wafer thickness corresponding relationship between ring mould and the mold pad are stated, the ring mould and the mould are adjusted
Difference in height between tool pad, comprising:
According to the difference in height and silicon wafer thickness pair between the thickness of silicon wafer and the preset ring mould and the mold pad
It should be related to, determine that the object height between the ring mould and the mold pad is poor；
Control signal is sent to the adjustment structure, the control signal is used for will be between the ring mould and the mold pad
Difference in height to be adjusted to object height poor.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110900438A (en) * | 2019-12-18 | 2020-03-24 | 上海超硅半导体有限公司 | Wafer polishing device and method |
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