CN106992112A - The polishing method of ultra thin wafer - Google Patents
The polishing method of ultra thin wafer Download PDFInfo
- Publication number
- CN106992112A CN106992112A CN201610040761.9A CN201610040761A CN106992112A CN 106992112 A CN106992112 A CN 106992112A CN 201610040761 A CN201610040761 A CN 201610040761A CN 106992112 A CN106992112 A CN 106992112A
- Authority
- CN
- China
- Prior art keywords
- chip
- colloid
- film
- thickness
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a kind of polishing method suitable for ultra thin wafer, described polishing method carries out pad pasting using adhesive tape and/or colloid to ultra thin wafer, is then polished again with template.The adhesive tape is included two layers：Glued membrane and the top layer film for providing mechanical force, top layer film are combined together by glued membrane with chip.The colloid is coated with method of spin coating, is either coated with or is coated with glue spraying method with film applicator coating；Colloid after coating is directly solidified, or first passes through baking surface levelling solidify afterwards.It the advantage is that：1）Newly-increased film can be embedded into as a part for chip inside vacuum suction backing plate, make chip be difficult to skid off in a template, and can be controlled by the thickness of adjusting film come the thickness after the polishing to chip；2）Newly-increased film has higher mechanical strength, and mechanical support effect can be provided to chip, chip is difficult fragment in polishing process.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of polishing method of large-size ultra-thin chip.
Background technology
Chemically mechanical polishing（CMP）Technology is one of key technology of wafer surface processing, in large scale bare crystalline piece as too
It is positive can the ultra-thin silicon single crystal flake of battery, the ultra-thin silicon single crystal flake of integrated circuit, the surface of LED sapphire substrate wafers etc. is polished
It is used widely in technique.
Polishing can improve the roughness of wafer surface, reduce the TTV of chip, the smooth of superelevation is realized in wafer surface
Degree, its utilization rate to light can also be improved for some optics chips.For example in the manufacturing process of integrated circuit, Silicon Wafer
Thousands of construction unit is often constructed on substrate, these construction units further form function by multiple layer metal interconnection
The device of property circuit.In multiple layer metal interconnection architecture, filled media layer between plain conductor, with the hair of integrated circuit technique
Exhibition, metal line width is less and less, and the wiring number of plies is more and more, and now the dielectric layer of wafer surface is put down using CMP
Smoothization processing can aid in the making of multilayer line, and can prevent by dielectric layer be coated in not flat surface caused by it is abnormal
Become.
The back of the body polishing technology of ultra-thin silicon single crystal flake such as used for solar batteries can just substantially improve the light of solar silicon wafers
Learn benefit, strengthen silicon chip back surface passivation effect, lifted solar cell photoelectric transformation efficiency, and can with SE, LBSF,
The mainstream technologys such as PERL, MWT are superimposed, and compatibility is good, can further improve the solar cell properties using these technologies, push away
Enter the development of high efficiency solar cell industrialization.
CMP processes are the processes that a mechanism and chemical action balance each other.For example in the polishing process of silicon wafer,
Secured the wafer in first with vacuum suction backing plate on rubbing head, under the pressure of rubbing head, by vacuum suction backing plate
Rotation, the rotation of polishing disk cause the friction of chip and polishing pad.Now chemical action is alkaline polishing fluid and chip table
Corrosion reaction occurs for face contact, and wafer surface can be rubbed by alkali liquid corrosion and then removed the corrosion layer, be made by circulating the two
With process, it is possible to realize the polishing of chip.
For chips more than 300 μ m thicks, preferable polishing effect can be reached by the above method, but for more
Thin chip, for vacuum suction backing plate absorption method, because the chip in polishing process it is necessary to have adequate thickness exposes mould
Plate surface, excessively thin chip thickness embedded inside template is less, and the template that is easy to fly out in quick rotary course is made
Fragmentate.
Therefore it is less than 300 μm of ultra thin wafer for wafer thickness, industry is typically using the single-sided polishing skill for having wax paster
Chip is tightly pasted together and is polished processing by art, chip by cere as medium with ceramic disk.There is the throwing of wax paster
Though light can improve machining accuracy, its technics comparing of waxing is complicated, and the form of used wax is more, and its polishing precision is straight
Connect and the factor such as the species and cere thickness of used wax and its uniformity coefficient, the clean level of process environments of silicon chip waxing
It is related.Therefore using in having a wax paster single-sided polishing, the technique of silicon chip waxing all should carry out (being at least not less than in toilet
100 grades), it is desirable to it is the thickness of cere suitable (1.5 μm of ≈), uniform.
Although using there is wax polishing to avoid the generation of fragment, the investment of patch wax machine and corollary equipment is very high
, transformed especially for older polissoir, it is necessary to put into larger fund, add fund input and be unfavorable for
Effective utilization of the equipment, while there is ceroplastic output smaller, it is impossible to meet the growing market demand.
The content of the invention
The purpose of the present invention is to overcome the deficiencies in the prior art there is provided a kind of polishing method of ultra thin wafer, sharp
Pad pasting is carried out to ultra thin wafer with adhesive tape or colloid, is then polished again with template, effectively compensate for the thickness of chip
Spend and add mechanical strength.
The technical scheme provided according to the present invention, the polishing method of described ultra thin wafer comprises the following steps：
Step 1: pasting one layer tape in chip non-polished surface, or it is coated with colloid and solidifies, or first in the coating of chip non-polished surface
Colloid and then the colloid surface adhesive tape of paste in solidification, constitute the increased pad pasting chip of an integral thickness；The adhesive tape is included
Two layers：Glued membrane and the top layer film for providing mechanical force, top layer film are combined together by glued membrane with chip；
Step 2: by pad pasting chip absorption inside template, chip exposes thickness outside template at 10 μm ~ 700 μm, patch
The thickness of film chip entirety embedded template is at 10 μm ~ 700 μm；
Step 3: implementing glossing to chip, chip is set to reach predetermined thickness；
Step 4: pad pasting chip is taken out from template, adhesive tape or colloid are removed by heating or radiation mode, or go successively
Except adhesive tape and colloid.
Specifically, the colloid is coated with method of spin coating, either it is coated with or is coated with glue spraying method with film applicator coating；Apply
Colloid after cloth is directly solidified, or first passes through baking surface levelling solidify afterwards.
The colloid thickness is in 10nm ~ 1500 μm.
The curing mode is heating or radiation mode.
Specifically, the thickness of the glued membrane is in 10nm ~ 500 μm, the thickness of top layer film is at 1 μm ~ 1000 μm.
After the glued membrane is resinae stickum, and the glued membrane is acted on by heating or radiation mode, stickiness can be reduced
Or disappear；The top layer film is plastic foil or metallic film.
Remove colloid method be：The colloid loses colloidality by heating or radiation mode, then passes through washing, plasma
Body oxidation, organic liquid soaking technology removal of removing photoresist；Or a kind of film is formed after the colloid solidification, pass through heating or radiation mode
Make to lose stickiness between film and chip, then the film is torn it down from chip by mechanical force.
It is described remove adhesive tape and colloid successively method be：First pass through heating or radiation mode make glued membrane stickiness reduce or
Disappear, adhesive tape is removed from chip exposes colloid；Then colloid is lost colloidality by heating or radiation mode, pass through
Washing, plasma oxidation, organic liquid soaking technology that removes photoresist remove colloid；Or consolidate colloid by heating or radiation mode
Change the film formed and lose stickiness between chip, the film is torn it down from chip by mechanical force.
Polishing method of the present invention, carries out pad pasting to ultra thin wafer using adhesive tape or colloid, template is then used again
Method is polished, and the advantage is that：
1）Newly-increased film can be embedded into as a part for chip inside vacuum suction backing plate, chip is difficult in a template
Skid off, and can be controlled by the thickness of adjusting film come the thickness after the polishing to chip；
2）Newly-increased film has higher mechanical strength, and mechanical support effect can be provided to chip, makes chip in polishing process
It is difficult fragment.
Brief description of the drawings
Fig. 1 is wafer polishing equipment schematic diagram.
Fig. 2 is the state diagram of chip in a template in wafer polishing equipment.
Fig. 3 is the step of the embodiment of the present invention one（1）Schematic diagram.
Fig. 4 is the step of the embodiment of the present invention one（2）Schematic diagram.
Fig. 5 is the step of the embodiment of the present invention one（4）Schematic diagram.
Fig. 6 is the step of the embodiment of the present invention two（1）Schematic diagram.
Fig. 7 is the step of the embodiment of the present invention two（2）Schematic diagram.
Fig. 8 is the step of the embodiment of the present invention two（4）Schematic diagram.
Fig. 9 is that the embodiment of the present invention three completes step（1）（2）Schematic diagram afterwards.
Figure 10 is the step of the embodiment of the present invention three（3）Schematic diagram.
Figure 11 is the step of the embodiment of the present invention three（5）Schematic diagram.
Figure 12 is the step of the embodiment of the present invention three（6）Schematic diagram.
Figure 13 is the finished wafer schematic diagram that the present invention is obtained.
Embodiment
The invention will be further described with reference to the accompanying drawings and examples.
It is as shown in Figure 1 the process being polished with template to chip, there is suction the inside of device 101 of wherein holding chip
Attached template, template can fix chip.Device 101 is pressed on polishing pad 102 with certain pressure, while 103 turns of deep bid
Dynamic, now chip will form the shape revolved round the sun around crystal circle center's rotation and around the center of polishing pad 102 with respect to polishing pad 102
State, while spraying polishing fluid on polishing pad 102, wafer surface will be polished.
The state of chip in a template is illustrated in figure 2, including template 201, pad 202, chip 203.During polishing,
Chip 203 is attracted on pad 202, and chip 203 exposes the thickness of the outside of template 201 at 10 μm ~ 700 μm, and chip 203 is embedded in
The thickness of template 201 is at 10 μm ~ 700 μm, and template 201 implements sideways thrust by the part being embedded into chip 203, makes chip
203 movements；Template 201 can also implement the power of a rotation when rotation to chip 203 simultaneously；Meanwhile, above template 201
It is pressurized, the pressure is transferred on chip 203 by template 201 and pad 202, control chip 203 is between polishing pad
Distance.
Embodiments of the invention one are as follows.
（1）As shown in figure 3, for ultra-thin chip, the thickness that its thickness is insufficient for embedded template 201 during grinding is needed
The thickness requirements of template 201 are sought or expose, first constituting an integral thickness in the non-polished surface of chip 203 patch one layer tape here increases
Plus pad pasting chip, the adhesive tape is made up of two parts, i.e., glued membrane 302 and provide the top layer film 301 of mechanical force.Top layer film 301
It is combined together by glued membrane 302 with chip 203, glued membrane 302 can be resinae herein（Such as polyurethanes）Stickum, and
After the glued membrane 302 is acted on by heating, photon radiation, laser emission, electron radiation, acoustic irradiation or other radiation modes, its
Stickiness can be reduced or disappeared；Top layer film 301 can be polyacrylic herein, and the plastic foil of polyethylene kind material can also
It is metallic film（Aluminium, tin, copper）Deng.The thickness of glued membrane 302 is in 10nm ~ 500 μm, and the thickness of top layer film 301 is at 1 μm ~ 1000 μm；
（2）As shown in figure 4, the chip that adhesive tape will be posted（Pad pasting chip）Absorption exposes template in the inside of template 201, chip 203
The thickness of 201 outsides is in 10 μm ~ 700 μm, the thickness of pad pasting chip embedded template 201（The thickness sum of chip 203 and adhesive tape）
At 10 μm ~ 700 μm.
（3）Glossing is implemented to chip 203, chip is reached predetermined thickness.
（4）As shown in figure 5, pad pasting chip is taken out from template 201, pass through heating, photon radiation, laser emission, electricity
Son radiation, acoustic irradiation or other radiation modes make adhesive tape stickiness reduce or disappear, and adhesive tape is removed from chip 203 and obtained
Finished wafer or further by obtaining finished product after dry method or wet-cleaning chip.
Embodiments of the invention two are as follows.
（1）As shown in fig. 6, being first coated with colloid 401 in the non-polished surface of chip 203, the colloid 401 can use method of spin coating
Coating, can also be coated with film applicator coating, can also be coated with glue spraying method；Colloid 401 after coating can directly solidify, can also
First pass through baking surface levelling solidify afterwards；Curing mode can be heating, photon radiation, laser emission, electron radiation, sound wave spoke
Penetrate or other radiation modes etc.；The thickness of colloid 401 is in 10nm ~ 1500 μm；The material of colloid 401 can be polyacrylate
Organic matter, phenolic resin type organic, epoxy resin type organic etc..
The colloid 401 can pass through heating, photon radiation, laser emission, electron radiation, acoustic irradiation or other radiation sides
Formula etc. loses colloidality, and by washing, plasma oxidation, organic immersion bubble etc. that removes photoresist is removed；The colloid 401 can also be solidification
After form a kind of film, heating, photon radiation, laser emission, electron radiation, acoustic irradiation or other radiation modes etc. can be passed through
Make to lose stickiness between film and chip 203, the film is torn it down from chip 203 by mechanical force.
（2）As shown in fig. 7, the chip that colloid 401 will be scribbled（Pad pasting chip）Absorption is exposed in the inside of template 201, chip
The thickness of the outside of template 201 is in 10 μm ~ 700 μm, the thickness of pad pasting chip embedded template 201（The thickness sum of chip and adhesive tape）
At 10 μm ~ 700 μm.The thickness after wafer polishing can be controlled by controlling the thickness of back colloid 401.
（3）Glossing is implemented to chip, chip is reached predetermined thickness；
（4）As shown in figure 8, pad pasting chip is taken out from template 201, pass through heating, photon radiation, laser emission, electronics spoke
Penetrate, acoustic irradiation or other radiation modes etc. make colloid 401 lose colloidality, by washing, plasma oxidation is organic to remove glue
Immersion etc. is removed；Or made by heating, photon radiation, laser emission, electron radiation, acoustic irradiation or other radiation modes etc.
Stickiness is lost between film and chip 203 that colloid 401 is formed after solidifying, the film is torn it down from chip by mechanical force；Finally
Obtain finished wafer or further by obtaining finished product after dry method or wet-cleaning chip.
Embodiments of the invention three are as follows.
（1）As shown in figure 9, being first coated with colloid 401 in the non-polished surface of chip 203, the colloid 401 can use method of spin coating
Coating, can also be coated with film applicator coating, can also be coated with glue spraying method；Colloid 401 after coating can directly solidify, can also
First pass through baking surface levelling solidify afterwards；Curing mode can be heating, photon radiation, laser emission, electron radiation, sound wave spoke
Penetrate or other radiation modes etc..The thickness of colloid 401 is in 10nm ~ 1500 μm.The material of colloid 401 can be that polyacrylate is organic
Thing, phenolic resin type organic, epoxy resin type organic etc..
The colloid 401 can pass through heating, photon radiation, laser emission, electron radiation, acoustic irradiation or other radiation sides
Formula etc. loses colloidality, and by washing, plasma oxidation, organic immersion bubble etc. that removes photoresist is removed；The colloid 401 can also be solidification
After can form a kind of film, pass through heating, photon radiation, laser emission, electron radiation, acoustic irradiation or other radiation modes etc.
It is lost stickiness between chip, the film is torn it down from chip by mechanical force.
（2）Then in the surface adhesive tape of paste of colloid 401, adhesive tape is made up of two parts, i.e. glued membrane 302 and offer mechanical force
Top layer film 301.Top layer film 301 is combined together by glued membrane 302 with chip 203, and glued membrane 302 can be resinae herein（Such as
Polyurethanes）Stickum, and the glued membrane 302 by heating, photon radiation, laser emission, electron radiation, acoustic irradiation or its
After his radiation mode effect, its stickiness can be reduced or disappeared；Top layer film 301 can be polyacrylic, polyethylene kind material
Plastic foil or metallic film（Aluminium, tin, copper）Deng；The thickness of glued membrane 302 is in 10nm ~ 500 μm, the thickness of top layer film 301
Degree is at 1 μm ~ 1000 μm.
（3）As shown in Figure 10, the chip that will be handled well by above-mentioned two（Pad pasting chip）Adsorb in the inside of template 201,
Chip 203 exposes the thickness of the outside of template 201 in 10 μm ~ 700 μm, the thickness of pad pasting chip embedded template 201（Chip 203 adds
The thickness sum of colloid 401, adhesive tape）At 10 μm ~ 700 μm.Can be by controlling the thickness or back adhesive tape of back colloid 401
Thickness control the thickness after wafer polishing.
（4）Glossing is implemented to chip 203, chip is reached predetermined thickness；
（5）As shown in figure 11, pad pasting chip is taken out from template 201, passes through heating, photon radiation, laser emission, electronics spoke
Penetrate, acoustic irradiation or other radiation modes make adhesive tape stickiness reduce or disappear, adhesive tape is removed from chip 203 makes colloid
401 expose.
（6）As shown in figure 12, heating, photon radiation, laser emission, electron radiation, acoustic irradiation or other radiation are passed through
Mode etc. makes colloid 401 lose colloidality, is removed colloid 401 by washing, plasma oxidation, organic techniques such as immersion bubble of removing photoresist
Remove；Or make colloid 401 by heating, photon radiation, laser emission, electron radiation, acoustic irradiation or other radiation modes etc.
Stickiness is lost between the film and chip 203 that are formed after solidification, the film is torn it down from chip 203 by mechanical force；Finally obtain
Finished wafer is further as shown in figure 13 by obtaining finished product after dry method or wet-cleaning chip.
Comparatively speaking, the method that surface described in embodiment one is taped, technological operation is simple；It is table described in embodiment two
The method of face plated film, can realize accurate control to increased film；Embodiment three is then that can not reach machinery in surface coating
When intensity requirement, surface glue band is further added by.
It should be understood that, although the present specification is described in terms of embodiments, but not each embodiment only includes one
Individual independent technical scheme, this narrating mode of specification is only that for clarity, those skilled in the art will should say
Bright book is as an entirety, and the technical solutions in the various embodiments may also be suitably combined, and forming those skilled in the art can be with
The other embodiment of understanding.
Claims (8)
1. the polishing method of ultra thin wafer, it is characterized in that, comprise the following steps：
Step 1: pasting one layer tape, or coating colloid in chip non-polished surface（401）And solidify, or it is first non-polished in chip
Face is coated with colloid（401）Then in the colloid surface adhesive tape of paste of solidification, the increased pad pasting chip of an integral thickness is constituted；Institute
Adhesive tape is stated comprising two layers：Glued membrane（302）With the top layer film for providing mechanical force（301）, top layer film（301）Pass through glued membrane（302）With
Chip is combined together；
Step 2: by pad pasting chip absorption in template（201）The inside, chip exposes template（201）The thickness of outside is in 10 μ
M ~ 700 μm, pad pasting chip entirety embedded template（201）Thickness at 10 μm ~ 700 μm；
Step 3: implementing glossing to chip, chip is set to reach predetermined thickness；
Step 4: by pad pasting chip from template（201）It is middle to take out, adhesive tape or colloid are removed by heating or radiation mode（401）,
Or adhesive tape and colloid are removed successively（401）.
2. the polishing method of ultra thin wafer as claimed in claim 1, it is characterized in that, the colloid（401）Use method of spin coating
Coating, is either coated with film applicator coating or is coated with glue spraying method；Colloid after coating（401）Directly solidified, or first led to
Overbaking surface levelling solidify afterwards.
3. the polishing method of ultra thin wafer as claimed in claim 1, it is characterized in that, the colloid（401）Thickness 10nm ~
1500μm。
4. the polishing method of ultra thin wafer as claimed in claim 2, it is characterized in that, the curing mode is heating or radiation side
Formula.
5. the polishing method of ultra thin wafer as claimed in claim 1, it is characterized in that, the glued membrane（302）Thickness 10nm ~
500 μm, top layer film（301）Thickness at 1 μm ~ 1000 μm.
6. the polishing method of ultra thin wafer as claimed in claim 1, it is characterized in that, the glued membrane（302）It is resinae viscosity
Material, and the glued membrane（302）After heating or radiation mode effect, stickiness can be reduced or disappeared；The top layer film（301）It is
Plastic foil or metallic film.
7. the polishing method of ultra thin wafer as claimed in claim 1, it is characterized in that, the colloid passes through heating or radiation mode
Colloidality is lost, then is removed by washing, plasma oxidation, organic liquid soaking technology that removes photoresist；Or shape after the colloid solidification
Into a kind of film, make to lose stickiness between film and chip by heating or radiation mode, then tear the film from chip by mechanical force
Get off.
8. the polishing method of ultra thin wafer as claimed in claim 1, it is characterized in that, it is described to remove adhesive tape and colloid successively
（401）Method be：First passing through heating or radiation mode makes glued membrane（302）Stickiness is reduced or disappeared, by adhesive tape from chip
Removing makes colloid（401）Expose；Then colloid is made by heating or radiation mode（401）Lose colloidality, by washing, etc. from
Daughter oxidation, organic liquid soaking technology that removes photoresist are by colloid（401）Remove；Or colloid is made by heating or radiation mode（401）
Stickiness is lost between the film and chip that solidify to form, the film is torn it down from chip by mechanical force.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610040761.9A CN106992112A (en) | 2016-01-21 | 2016-01-21 | The polishing method of ultra thin wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610040761.9A CN106992112A (en) | 2016-01-21 | 2016-01-21 | The polishing method of ultra thin wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106992112A true CN106992112A (en) | 2017-07-28 |
Family
ID=59414381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610040761.9A Pending CN106992112A (en) | 2016-01-21 | 2016-01-21 | The polishing method of ultra thin wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106992112A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108098567A (en) * | 2017-12-14 | 2018-06-01 | 苏州新美光纳米科技有限公司 | Polishing pressure buffer pad, burnishing device and glossing |
| CN109605137A (en) * | 2018-12-27 | 2019-04-12 | 衢州晶哲电子材料有限公司 | A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method |
| CN110900438A (en) * | 2019-12-18 | 2020-03-24 | 上海超硅半导体有限公司 | Wafer polishing device and method |
| CN113752404A (en) * | 2021-09-23 | 2021-12-07 | 常州时创能源股份有限公司 | Silicon block stick sticking method |
| CN114974725A (en) * | 2022-05-23 | 2022-08-30 | 上海超导科技股份有限公司 | Polishing method of batched superconducting base bands and superconducting base bands |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4512113A (en) * | 1982-09-23 | 1985-04-23 | Budinger William D | Workpiece holder for polishing operation |
| TW317522B (en) * | 1996-05-31 | 1997-10-11 | Komatsu Denshi Kinzoku Kk | Surface lapping method for wafer of semiconductor |
| CN101677055A (en) * | 2008-09-18 | 2010-03-24 | 高宏明 | Wafer grinding process |
| CN102019574A (en) * | 2010-12-10 | 2011-04-20 | 天津中环领先材料技术有限公司 | Wax-free polishing process of ultrathin zone-melting silicon polished slice |
| CN102049723A (en) * | 2009-10-28 | 2011-05-11 | 硅电子股份公司 | Method for polishing a semiconductor wafer |
| CN103619538A (en) * | 2011-06-29 | 2014-03-05 | 信越半导体株式会社 | Polishing head and polishing apparatus |
| JP5942657B2 (en) * | 2012-07-19 | 2016-06-29 | 東洋インキＳｃホールディングス株式会社 | Double-sided adhesive tape for fixing abrasive members |
-
2016
- 2016-01-21 CN CN201610040761.9A patent/CN106992112A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4512113A (en) * | 1982-09-23 | 1985-04-23 | Budinger William D | Workpiece holder for polishing operation |
| TW317522B (en) * | 1996-05-31 | 1997-10-11 | Komatsu Denshi Kinzoku Kk | Surface lapping method for wafer of semiconductor |
| CN101677055A (en) * | 2008-09-18 | 2010-03-24 | 高宏明 | Wafer grinding process |
| CN102049723A (en) * | 2009-10-28 | 2011-05-11 | 硅电子股份公司 | Method for polishing a semiconductor wafer |
| CN102019574A (en) * | 2010-12-10 | 2011-04-20 | 天津中环领先材料技术有限公司 | Wax-free polishing process of ultrathin zone-melting silicon polished slice |
| CN103619538A (en) * | 2011-06-29 | 2014-03-05 | 信越半导体株式会社 | Polishing head and polishing apparatus |
| JP5942657B2 (en) * | 2012-07-19 | 2016-06-29 | 東洋インキＳｃホールディングス株式会社 | Double-sided adhesive tape for fixing abrasive members |
Non-Patent Citations (3)
| Title |
|---|
| 原燃料化学工业部涂料技术训练班: "《涂料工艺》", 31 January 1980 * |
| 尹福炎: "《金属箔式应变片制作工艺原理》", 31 August 2011 * |
| 张齐生等: "《胶合板生产技术问答》", 31 October 1981 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108098567A (en) * | 2017-12-14 | 2018-06-01 | 苏州新美光纳米科技有限公司 | Polishing pressure buffer pad, burnishing device and glossing |
| CN109605137A (en) * | 2018-12-27 | 2019-04-12 | 衢州晶哲电子材料有限公司 | A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method |
| CN110900438A (en) * | 2019-12-18 | 2020-03-24 | 上海超硅半导体有限公司 | Wafer polishing device and method |
| CN113752404A (en) * | 2021-09-23 | 2021-12-07 | 常州时创能源股份有限公司 | Silicon block stick sticking method |
| CN113752404B (en) * | 2021-09-23 | 2023-03-21 | 常州时创能源股份有限公司 | Silicon block stick sticking method |
| CN114974725A (en) * | 2022-05-23 | 2022-08-30 | 上海超导科技股份有限公司 | Polishing method of batched superconducting base bands and superconducting base bands |
| CN114974725B (en) * | 2022-05-23 | 2023-02-28 | 上海超导科技股份有限公司 | Polishing method of batched superconducting base bands and superconducting base bands |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106992112A (en) | The polishing method of ultra thin wafer | |
| TWI446420B (en) | Releasing carrier method for semiconductor process | |
| CN102037553B (en) | Method and apparatus for manufacturing semiconductor device | |
| JP5661928B2 (en) | LAMINATE MANUFACTURING METHOD, SUBSTRATE TREATMENT METHOD, AND LAMINATE | |
| CN103606517A (en) | Silicon chip thinning method | |
| CN105081893B (en) | A kind of ultra-thin Ge monocrystalline substrate materials and preparation method thereof | |
| CN102299065B (en) | The processing method of wafer | |
| CN102969264A (en) | Stacked semiconductor devices and fabrication method/equipment for the same | |
| TW200524024A (en) | Protecting thin semiconductor wafers during back-grinding in high-volume production | |
| CN103009222A (en) | Wax-free polishing process of heavily-doped polished silicon wafer with high local flatness | |
| CN105895540A (en) | Die back surface silicone printing encapsulation method | |
| KR101503326B1 (en) | A method for de-bonding of device wafer and carrier wafer and apparatus for de-bonding | |
| JP2012209480A (en) | Processing method of electrode-embedded wafer | |
| CN106847718A (en) | A kind of interim bonding of device wafers with tear bonding technology open | |
| JP2013084770A (en) | Grinding method for wafer | |
| CN112447590B (en) | Wafer dicing method based on water-guided laser processing technology | |
| CN113380649B (en) | Three-dimensional integrated circuit packaging method based on TSV | |
| CN103633004A (en) | Method for photoetching and etching of membrane circuit patterns on ultra-thin quartz substrate | |
| TW201234470A (en) | Mounted wafer manufacturing method | |
| CN111599743A (en) | Method for producing wafer by combining composite adhesive film with through hole glass carrier plate structure | |
| JP3520839B2 (en) | Manufacturing method of piezoelectric vibrating reed | |
| CN101934493A (en) | Polishing process of ultrathin zone-melting silicon polished wafer | |
| CN106584263B (en) | Monster chip thining method based on Nano diamond particle | |
| JP4484982B2 (en) | Adhesive sticking method | |
| CN107887284A (en) | A kind of method of large scale board operation small size wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170728 |