JP3520839B2 - Manufacturing method of piezoelectric vibrating reed - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for precisely polishing a thin plate of a brittle material, such as a wafer made of quartz or other piezoelectric material, into an ultrathin wall, and more particularly to a resonator element of a piezoelectric vibrator. To a method of manufacturing.

[0002]

2. Description of the Related Art Conventionally, piezoelectric vibrators have been widely used as a clock source for electronic circuits in various electronic devices including information communication devices such as postal phones, PHSs, OA devices such as computers, and consumer devices such as electronic watches. Has been adopted. Especially in the field of information communication by mobile phones, as the capacity and speed of information transmission increase, the communication frequency becomes higher and the system speed becomes higher. There is a demand for a vibrator that operates at a higher frequency of about 90 to 200 MHz.

In order to increase the frequency of a piezoelectric vibrator, a piezoelectric vibrating piece (or vibrating portion) made of quartz or other piezoelectric material.
It is necessary to further reduce the thickness of the film from the thickness of about 20 to 30 μm currently produced. Generally, in the manufacture of a piezoelectric vibrating piece, as described in Japanese Patent Laid-Open No. 10-180623, etc., a thin plate-shaped member that rotates between a sun gear and a ring gear that are coaxially rotatable and that rotates and revolves by meshing with them. Of the desired vibrating piece by using a polishing processing apparatus which is provided with a carrier and polishes the upper and lower surfaces of the wafer inserted and held in the through hole formed in the carrier while supplying the slurry between the upper and lower surface plates. Process to thick.

At this time, the strength of the wafer decreases as the thickness decreases, and cracks and chips easily occur. Therefore, in JP-A-10-180623, an additional through hole is provided in the carrier. A sufficient amount of slurry is supplied between the lower surface of the carrier and the lower surface plate to prevent the wafer from being damaged. Further, in order to process the wafer thin, an even thinner carrier is required. The carrier disclosed in Japanese Unexamined Patent Publication No. 11-28661 has a supporting portion having a fine lattice structure to enhance mechanical strength, prevents deformation such as warpage, and has a thickness and a favorable thickness that can correspond to thinning of a wafer. We are trying to achieve flatness.

On the other hand, it is possible to operate the piezoelectric vibrator at a high frequency without reducing the thickness of the vibrating piece by using the conventional wafer having a thickness of about 75 μm as it is. A normal piezoelectric vibrator operates at its fundamental vibration frequency, but if, for example, a third overtone is used,
The frequency can be increased.

Further, the frequency of the AT-cut piezoelectric vibrator increases in inverse proportion to the plate thickness of the vibrating piece, but as described above, the thinner the plate thickness, the more difficult it is to machine by polishing, and the mechanical strength of the vibrator is increased. Is deteriorated, and is easily damaged by impact during processing or during use. Therefore, recently, for example, Japanese Laid-Open Patent Publication No. 11-355094, republished WO98 / 0387.
As described in Japanese Patent No. 36, a thick support portion is integrally formed around a thin vibrator portion, whereby the end portion of the vibrator is not chipped or cracked and excellent in mechanical strength. A so-called inverse mesa-type piezoelectric vibrator has been proposed which is easy to mount, and can be made thinner and downsized, and has a higher frequency. Furthermore, by making the cross-sectional shape of the vibrator part convex, that is, convex, the amount of vibration displacement attenuation at the end of the vibrator becomes larger than when the cross-sectional shape is rectangular, so the energy trapping effect is large and spurious It is known that the suppression effect is improved and therefore the oscillator can be made smaller accordingly.

[0007]

However, even if the conventional polishing apparatus having improved polishing technology as described above is used, the strength of the wafer itself decreases as the plate thickness becomes thinner. It is difficult to handle at the time, and cracks and chips easily occur. In order to process the thin plate thickness while maintaining the strength of the wafer,
For example, it is usually possible to put a few cm square on the order of 10 mm square, but the number of vibrating pieces obtained per wafer is significantly reduced and the production efficiency is reduced. The number of parts to be discarded increases, the yield decreases, and the manufacturing cost increases. Moreover, the smaller the outer shape of the wafer is, the more difficult it is to handle, and the more easily it is damaged, the more the yield may be reduced.

According to Japanese Patent Laid-Open No. 11-28661, even the carrier described in the publication has a plate thickness of 2
The thickness is about 0 μm, and a wafer thinner than that cannot be processed. Even if a carrier thinner than 20 μm can be realized, it is relatively difficult to securely hold a thin wafer, and it may be damaged during polishing. Further, the strength and useful life of the carrier itself are reduced, Higher prices are likely to increase manufacturing costs.

On the other hand, the method of using the overtone of the fundamental vibration frequency of the piezoelectric vibrator is advantageous in that it is not necessary to machine the thickness of the vibrating piece, but the variable width of the frequency is small. Therefore, VCXO (voltage controlled crystal oscillator) and VC-TCXO used for mobile phones etc.
There is a problem that it cannot be used for applications such as (voltage control / temperature compensation type crystal oscillator). Furthermore, compared to the fundamental wave, CI
Since (crystal impedance) is high, there is a problem that power consumption is large and it is difficult to handle, and that the surface condition of the vibrating piece greatly affects quality such as low-voltage driving characteristics and frequency stability of the vibrator.

Further, in the above-described inverted mesa type piezoelectric vibrator, a wafer is usually subjected to chemical processing such as wet etching or dry etching, or mechanical processing such as sandblasting.
The central vibrator is thinly processed. However, it is relatively difficult to make the cross-sectional shape of the vibrator portion into a desired convex shape, and in JP-A No. 11-355094, the steps are approximated, but such a processing step is complicated and troublesome. is there.

Therefore, an object of the present invention is to use a conventional carrier and polishing technique as they are, and to make a substrate made of a brittle material such as quartz or other piezoelectric material ultra-thin without causing cracks or chips. An object of the present invention is to provide a thin plate polishing method that can be polished and is relatively easy to handle.

Another object of the present invention is, for example, 70 to 160.
In order to realize a high-frequency piezoelectric oscillator of about MHz or higher, a wafer of piezoelectric material is, for example, 10 to 25 μm.
It can be ground to a thickness of about m or less,
Moreover, it is an object of the present invention to provide a method of manufacturing a piezoelectric vibrating piece that has a high yield and high production efficiency and yield.

Further, an object of the present invention is to provide an inverted mesa type piezoelectric device which can easily process a vibrator portion having a convex cross-sectional shape without going through a troublesome and complicated process similar to the conventional step shape. It is to provide a method for manufacturing a resonator element.

[0014]

According to the present invention, a step of laminating two substrates with an adhesive to form a laminated plate, polishing both sides of the laminated plate, and then separating the individual thin plates. A method for polishing a thin plate is provided.

In this way, the conventional carrier and polishing apparatus can be used as they are, with the laminated plate as one substrate, whereby each substrate can be thinned to at least half of the currently possible plate thickness. It can be polished.
Moreover, since the strength of the laminated plate is larger than the strength of a single substrate having the same thickness due to the toughness of the adhesive between the two substrates, it is easy to handle, and cracks and chips are unlikely to occur during polishing. . The “polishing process” in the present invention includes lapping process and finishing process performed in addition to the lapping process.

Further, according to the present invention, the previously bonded 2
A third substrate can be attached to a single substrate to form a laminated plate having a three-layer structure. By polishing both surfaces of this laminated plate, the first and third surfaces constituting the both surfaces are polished.
The substrate can be polished to be thinner than ½ of the currently available thickness by ½ of the thickness of the second substrate.
On the contrary, even if the laminated plate itself is thickened, the first and third substrates can be polished to the same thinness, so that a carrier thicker than before can be used, which makes the polishing process easier and damages the substrates. Can be reduced.

As described above, the method of the present invention is suitable for polishing a substrate made of a brittle material such as quartz or other piezoelectric material, since it can be polished thinner than before with less damage to the substrate.

To bond the substrates with an adhesive, the first substrate is dipped in the low-viscosity adhesive liquid, then the second substrate is immersed in the adhesive liquid, and the lower end of the first substrate is first bonded. It is preferable to form a laminated plate by immersing the substrate in the lower end of the substrate, superimposing the substrate on the first substrate, and infiltrating an adhesive between them to bond them together. As a result, the adhesive is sucked up along the bonding surfaces of the two substrates by capillarity so as to expel the air from the gap, and an adhesive layer having a uniform thickness and containing no bubbles is obtained.

Further, in the laminated plate having the three-layer structure, after the first and second substrates are superposed in the liquid of the adhesive as described above, the third substrate is further placed in the liquid of the adhesive. Similarly, the lower ends of the first and second substrates are soaked together that the lower ends thereof are superposed, and then the first and second substrates are superposed on the second substrate, and the adhesive is allowed to penetrate between them so that they are bonded together. It can be formed so as to have an adhesive layer having various thicknesses.

In one embodiment, it is preferable to use a photo-curable adhesive and irradiate it with light to cure the adhesive before polishing the laminate. This removes excess adhesive that has adhered to the periphery and surface of the laminate,
The alignment between the bonded substrates can be adjusted, and since the adhesive is simultaneously cured over the entire surface of the substrate, the adhesive layer has a uniform thickness.

Further, before the adhesive is cured by irradiating the laminated plate with light, a uniform pressure is applied to the entire surface of the laminated plate to adjust its thickness. This is advantageous because not only the height can be adjusted but also fine bubbles contained in it can be eliminated.

The laminated plate having both sides polished can be relatively easily separated into individual thin plates by immersing it in a solvent of an adhesive.

According to another aspect of the present invention, two wafers made of a piezoelectric material such as quartz are bonded with an adhesive to form a laminated plate, and both surfaces of the laminated plate are polished to obtain a desired wafer. The method for manufacturing a piezoelectric vibrating piece is characterized in that it has a step of removing the adhesive before or after processing to the desired thickness of the piezoelectric vibrating piece, and before or after processing to the desired external dimensions of the piezoelectric vibrating piece. Provided. The laminated wafer or the piezoelectric vibrating piece can be easily separated by immersing the laminated wafer or the piezoelectric vibrating piece in the peeling solution of the adhesive to dissolve the adhesive.

As a result, the piezoelectric vibrating reed having a thinner plate thickness than the conventional one can be manufactured by using the wafer having the same outer dimensions as the conventional one, with good production efficiency and yield, without lowering the yield, and further, The outer shape processing of the piezoelectric vibrating piece can be performed continuously with the polishing processing.

In another embodiment, the laminated plate may be formed by bonding two wafers on both sides of the dummy plate with an adhesive agent. Since a laminated plate with a three-layer structure can secure a sufficient thickness, both-side polishing can be performed more easily, both wafers can be processed uniformly, and a piezoelectric vibrating reed having a thinner plate thickness can be used as compared with the case without a dummy plate. It can be manufactured.

In one embodiment, the laminated plate may be composed of a wafer and a dummy plate. Here, when the hardness of the wafer and the hardness of the dummy plate are different and, for example, the material of the dummy plate is softer than that of the wafer, the polishing rate of the wafer is smaller than that of the dummy plate, and therefore the wafer can be polished with higher accuracy. it can. On the contrary, when the material of the dummy plate is harder than the wafer, the polishing rate of the wafer is higher than that of the dummy plate, so that the polishing time can be shortened.

Further, in one embodiment, it is preferable to further include a step of previously forming a concave portion on the bonding surface of the dummy plate in accordance with the position of the piezoelectric vibrating piece to be processed into the wafer. Normally, the laminating process of the laminated plate is carried out while pressing the upper and lower surface plates uniformly with the slurry on the upper and lower surfaces thereof as described above, but at that time, a portion of the wafer corresponding to the concave portion of the dummy plate is partially formed. It flexes so as to plunge into the concave portion. In this state, after uniformly lapping both sides of the laminated plate and releasing the pressing force from the both sides, the bent wafer portion returns to its original state, and the projections having a shape corresponding to the bending are formed on the wafer polishing surface. Is formed at the position of the piezoelectric vibrating piece. When the vibrating portion is provided on the opposite side of the protrusion, the so-called inverted mesa type AT-cut piezoelectric vibrating piece described above can be easily manufactured in wafer units.

In another embodiment, it is convenient to further include a step of forming a concave portion in the bonding surface of the wafer in advance. In this case, similarly, when polishing is performed while pressing uniformly on the upper and lower surfaces of the laminated plate with a surface plate etc., the thin-walled portion of the wafer forming the bottom of the concave portion partially protrudes into the concave portion. Bend as you do. After uniformly laminating both sides of the laminated plate in this state and releasing the pressing force from the both sides, the bent wafer portion returns to the original side, so that the protrusion having a shape corresponding to the bending is formed on the wafer. It is formed on the back side of the concave portion of the polishing surface. Therefore, similarly, the vibrating portion of the reverse-mesa type AT-cut piezoelectric vibrator can be thinned to a desired thickness for each wafer.

When bonding a wafer or a dummy plate having such a recess, it is preferable that the adhesive is applied to the bonding surface of the wafer or the dummy plate so as not to completely fill the recess. During polishing of the laminated plate, the bending of the wafer into the recess is not hindered by the adhesive, which facilitates the formation of the protrusion.

In particular, when the adhesive has a property of having flexibility after being hardened, the wafer easily bends into the concave portion during polishing of the laminated plate, and even if the concave portion is filled with the adhesive. The wafer can bend into the recess,
It is preferable because it does not hinder the formation of the protrusions.

Also in this case, the bonding of the wafers with the adhesive is performed by immersing the first wafer in the liquid of the low-viscosity adhesive,
Next, the second wafer is immersed in the liquid of the adhesive with its lower end aligned with the lower end of the first wafer and then superposed on the first wafer, and the adhesive is allowed to penetrate between them by capillarity. It is convenient to form a laminate by laminating and laminating.

Similarly, when forming a laminated plate having a three-layer structure with a dummy plate sandwiched between them, the first wafer is dipped in an adhesive solution, and the lower end of the dummy plate is attached to the lower end of the first wafer. After immersing the second wafer on the first wafer, superposing the adhesive on the first wafer, adhering the second wafer to the lower surface of the dummy plate by dipping the second wafer, It is possible to form a laminated plate by stacking the dummy plates on top of each other and adhering an adhesive between them so as to bond them together.

When a wafer and a dummy plate are attached to each other to form a laminated plate, similarly, either the wafer or the dummy plate is dipped in a liquid of an adhesive, and then the dummy plate or the wafer is bonded. It is convenient to immerse one of the other in the liquid of the adhesive while matching the lower ends thereof, and then to superpose the both, and to bond the adhesive by permeating the adhesive between them.

In one embodiment, prior to forming the laminate,
It is preferable to further include a step of finishing the bonded surface of the wafer in advance, because the finishing can be performed on the wafer having an appropriate plate thickness, and the wafer is easily damaged without any risk of damage.

Further, in one embodiment, it is preferable to use a photo-curable adhesive and to irradiate it with light before polishing the laminated plate to cure the adhesive. It is convenient to further include the step of applying a uniform pressure to the entire surface of the laminate to adjust the thickness of the adhesive layer before the adhesive is cured.

[0036]

Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Figure 1
FIG. 3 schematically shows steps of a first embodiment of a method of manufacturing a resonator element for a crystal unit to which the invention is applied. First, in the wafer pre-treatment step (step S11), a plurality of wafers are cut out from a raw material of artificial quartz into a predetermined outer dimension and a plate thickness as in the conventional case, and the plate is polished to a thickness of 40 μm.
After doing it, wash it. Further, at least one main surface of each wafer is finished into a desired surface condition required for the final vibrating piece.

Next, the two wafers thus pretreated are bonded with an adhesive (step S12). As shown in FIG. 2A, one wafer 3 is placed on the liquid adhesive 2 in the bath 1.
Soak. The wafer 3 is arranged so that the main surface opposite to the finished main surface is leaned against the backrest 4 of the tank 1. The adhesive 2 used in this example is a low-viscosity, water-soluble, UV-curing and anaerobic adhesive containing modified acrylic as a main component, and the tank 1 has a wafer as will be described later. It is preferable to insert it so that the depth becomes about 1/5 of the height of 3.

Next, the second wafer 5 is dipped in the adhesive 2 in the tank 1 with its lower end aligned with the lower end of the wafer 3 and its finished main surface facing the wafer 3 side. As shown in FIG. 2B, the wafer 5 is slowly stacked on the wafer 3 so that the lower end of the wafer 5 serves as a fulcrum and the upper end thereof is rolled. The adhesive agent 2 is sucked up to the upper end along the overlapping surfaces of the wafers 3 and 5 by removing the air from between them due to the capillary phenomenon. Therefore, an adhesive layer having a uniform thickness in which bubbles do not enter can be obtained between the bonded wafers 3 and 5. The thickness of the adhesive layer is preferably about 3 to several μm. At this time, if the two wafers are overlapped with each other in a reduced pressure atmosphere, air is likely to escape from between them, and further, the thickness of the adhesive tends to be constant, which is advantageous.

The laminated wafer 6 thus bonded is pulled up from the tank 1 and the excess adhesive adhering to the periphery and the surface thereof is wiped off with an appropriate cloth or the like. Further, using a suitable jig or the like, the alignment state of the both wafers is appropriately corrected.
This operation can be easily performed because the adhesive is anaerobic, low in viscosity, and not hardened.

Further, in this embodiment, as shown in FIG. 2C,
The laminated wafer 6 is placed on a flat table 7, and a flat metal plate 8 having a size larger than that of the laminated wafer is placed on the flat table 7.
Moreover, a weight 9 is placed at the center thereof, and a relatively light pressure is applied evenly to the entire surface of the laminated wafer 6 from above, and the wafer is left in that state for a certain time. As a result, the entire adhesive layer of the laminated wafer 6 can be adjusted to have a uniform predetermined thickness, and at the same time, fine bubbles contained in the adhesive layer can be eliminated. In an alternative embodiment, the weight 9 could be replaced by any suitable pneumatic means and be similarly pressurized.

After pressurizing, the weight 9 and the metal plate 8 are removed,
The excess adhesive leaked around the laminated wafer 6 is wiped off. The surface of the weight and the metal plate is made of PTFE (polytetrafluid) so that it can be easily removed from the laminated wafer.
It is desirable to attach oroethylene) treatment or a PTFE sheet. Next, as shown in FIG. 2D, the laminated wafer 6 is placed on the table 7 again, and ultraviolet light is applied from above to the entire surface of the laminated wafer by the ultraviolet lamp 10 for a predetermined time.
For example, irradiation is performed for about 5 to 10 minutes to sufficiently cure the adhesive in the adhesive layer. As a result, the laminated wafer 6 completely integrated into one wafer is obtained.

In one embodiment, in order to uniformly cure the adhesive, ultraviolet rays are radiated for about 30 seconds to temporarily cure the ultraviolet rays for 30 seconds while a weight or a metal plate for shielding the ultraviolet rays is placed on the laminated wafer. It is also desirable to remove the metal plate and further irradiate it with ultraviolet rays to fully cure it. In another embodiment,
It is also possible to arrange a plurality of laminated wafers side by side and irradiate them with ultraviolet light to simultaneously cure the adhesives.

Next, by the conventional lapping method,
Both sides of the laminated wafer 6 are lapped and, if necessary, finished by a conventional method (step S1).
3). The laminated wafer 6 is held in a conventional carrier having an appropriate thickness, and is polished to a desired thickness using, for example, a conventional polishing apparatus described in JP-A-10-180623. The thickness of the laminated wafer 6 being processed is determined by, for example, sending a sweep frequency signal to an electrode embedded in a polishing surface plate of a polishing apparatus and measuring a resonance response when the laminated wafer passes through the electrode. It can be controlled automatically. For example, when the plate thickness of the original wafer is 40 μm, a laminated wafer having a plate thickness of about 80 μm is finally obtained before polishing and the plate thickness is 20 to 5 μm.
It can be processed to about 0 μm, and as a result, an ultrathin wafer having a plate thickness of about 10 to 25 μm can be obtained.

The laminated wafer thus polished is processed into a predetermined outer shape and size of a quartz crystal vibrating piece by using a conventional method as described in, for example, Japanese Patent Laid-Open No. 9-266428 (step S14). That is, a plurality of laminated wafers
A dummy wafer plate is sandwiched from both upper and lower sides, laminated, and laminated with a similar adhesive to form a blocked wafer laminated body. This is cut in a certain direction with the same width to form a plurality of strip-shaped intermediate bodies. A plurality of the intermediates are laid side by side in a state of contacting each other, sandwiched from two upper and lower sides by two dummy glass plates, and bonded with an adhesive to form a block. Further, this block is cut into the same width in the direction orthogonal to the above direction to form a strip-shaped vibrating reed laminate. This is immersed in an appropriate peeling liquid for a predetermined time to dissolve the adhesive, and separated into individual vibrating pieces having a predetermined outer dimension and shape. Electrodes are formed on the resonator element in the same manner as in the conventional case, frequency adjustment is performed, and the resonator is mounted in a package to complete a desired high-frequency crystal resonator.

As a matter of course, in another embodiment, the laminated wafer which has been subjected to double-side polishing is melted to dissolve the adhesive layer by using a peeling solution, separated into two wafers, and then cut to obtain a predetermined crystal vibrating piece. It can be processed into the external dimensions and shape of.

In another embodiment, a wafer and a dummy plate are bonded together to form a laminated wafer, and both surfaces thereof are similarly polished. Here, when the dummy plate is made of a material softer than the quartz wafer, the polishing rate of the wafer is smaller than that of the dummy plate, so that the plate thickness can be polished with higher accuracy, and conversely the material of the dummy plate is When it is harder than the wafer, the polishing rate of the wafer is higher than that of the dummy plate, so that the polishing time is shortened.

FIG. 3 shows a modification of the first embodiment. In this modified example, as shown in FIG. 3A, the dummy plate 11 is superposed on the finish-processed surface of the wafer 3 immersed in the adhesive 2 of the tank 1 in the same manner as in the first embodiment, and the adhesive sucked up by the capillarity phenomenon. After bonding with the agent, the second crystal wafer 5 is immersed in the adhesive 2 with its lower end aligned with the lower end of the dummy plate 11. Next, the wafer 5 is slowly tilted so that the finished surface of the wafer 5 is overlapped with the dummy plate 11, and similarly the bonding is performed by utilizing the capillary action of the adhesive. As a result, as shown in FIG. 3B, a laminated wafer 13 having a three-layer structure is formed in which the two quartz wafers 3 and 5 are bonded to each other with the dummy plate 11 sandwiched therebetween and the adhesive layers 12 interposed therebetween. Next, the adhesive is cured by the steps shown in FIGS. 2C and 2D.

As the dummy plate 11, a glass plate or a crystal wafer is used. In particular, when a crystal wafer is used as the dummy plate, it is advantageous because it has good adhesiveness to the crystal wafers bonded to both surfaces thereof.

Next, similarly to the first embodiment, both sides of the laminated wafer 13 are lapped by using the conventional polishing apparatus and carrier, and further finished as required. According to this modified example, by appropriately selecting the plate thickness of the dummy plate 11, the crystal wafers 3, 5 are thinner than the case of the first embodiment by about ½ of the plate thickness of the dummy plate. It is possible to process each of the plate thicknesses. On the contrary, the dummy plate 1
By using a carrier thicker by one plate thickness, each wafer can be processed into the same plate thickness as the laminated wafer 6 of the first embodiment. The laminated wafer 13 having a three-layer structure that has been subjected to polishing is also processed into a crystal vibrating piece having a desired outer shape and size by using a conventional method.

FIG. 4 schematically shows a process of manufacturing a resonator element of an inverted-mesa type AT-cut crystal resonator according to the second embodiment of the present invention. First, in the wafer pretreatment step (step S21), a plurality of wafers are cut into a predetermined outer dimension and plate thickness from the raw material of the artificial quartz as in the first embodiment, and the lapping process is performed to a plate thickness of 100 μm to 40 μm. To wash. Next, at least one main surface of each wafer is finished into a desired surface state, and then a concave portion which becomes an ultra-thin vibrating portion of the inverted mesa AT-cut crystal resonator is formed (step S22).

In this embodiment, as shown in FIG. 5A, a large number of concave portions 15 are formed at predetermined positions over the entire one main surface of the quartz wafer 14, and wet etching or dry etching using conventional photolithography is performed. Are formed by controlling to a predetermined size and depth. For example, in the case of wet etching, a Cr film and Au are formed on both surfaces of the crystal wafer.
A corrosion resistant film made of a film is formed by vapor deposition or sputtering, a resist film is applied thereon and patterned, and then the exposed corrosion resistant film is etched with an etching solution. The quartz wafer is further dipped in an etching solution mainly containing hydrofluoric acid and etched to a predetermined depth to completely remove the remaining resist film and corrosion resistant film.

Next, the two wafers 14a and 14b are bonded with an adhesive (step S23) in the same manner as in the first embodiment described above with reference to FIGS. 2A and 2B, and as shown in FIG. 5B. Then, a laminated wafer 16 is formed with the surfaces on which the concave portions 15a and 15b are formed facing each other. The adhesive of this example is also a low-viscosity, water-soluble, UV-curable and anaerobic adhesive containing modified acrylic as a main component.

The laminated wafer 16 was exposed to ultraviolet light for a certain period of time after adjusting the thickness of the adhesive layer 17 and removing bubbles in the same manner as described above with reference to FIGS. 2C and D. The agent is fully cured into a single wafer. next,
Similar to step S13 of the first embodiment, both sides of the laminated wafer 16 are polished by the conventional polishing method (step S24). Thickness of each wafer 14a, 14b and concave portion 1
Since the depths of 5a and 15b are known in advance, by controlling the polishing processing amount of the laminated wafer 16, the plate thickness of each wafer and the thickness of the ultra-thin vibrating portion in the concave portion are controlled with high accuracy. be able to.

The aforesaid laminated wafer is soaked in the adhesive peeling liquid for a predetermined time to dissolve the adhesive layer 17 and separated into individual crystal wafers (step S25).
As a result, a crystal wafer having a desired plate thickness provided with a desired ultra-thin concave portion can be obtained. This crystal wafer is provided with predetermined electrodes on both sides thereof by a conventional method such as mask vapor deposition or plating using photolithography, and is subjected to frequency adjustment, and then cut into individual resonator elements. When this resonator element is mounted on the package, the desired high frequency inverted mesa type A
A T-cut crystal unit is obtained.

In another embodiment, after the wafer separated in step S25 is cut into vibrating pieces having predetermined outer dimensions and shapes, electrodes can be formed on each vibrating piece and frequency adjustment can be performed. . In yet another embodiment,
After the electrodes are formed on both surfaces of the separated wafer in step S25, the wafer can be cut into a resonator element having a predetermined outer size and shape and the frequency can be adjusted. In any case, since the crystal resonator element can be manufactured on a wafer-by-wafer basis, a desired high-frequency AT-cut crystal resonator can be mass-produced with good yield.

FIG. 6 shows a modification of the second embodiment. This modified example is similar to the modified example of the first embodiment described above with reference to FIG. 3, and sandwiches the dummy plate 18 and sandwiches the adhesive layers 17 on both sides of the dummy plate 18, and the two crystal wafers 14a and 14b.
To form a laminated wafer 19 having a three-layer structure in which the surfaces on which the concave portions 15a and 15b are formed face each other.
A glass plate or a crystal wafer is used for the dummy plate 18, and the crystal wafer is particularly advantageous in terms of adhesiveness with the crystal wafer to be bonded on both sides thereof.

The laminated wafer 19 is polished on both sides using a conventional polishing apparatus and carrier while controlling the plate thickness to a desired value, and then immersed in a peeling solution for the adhesive to remove each wafer and the dummy. Separate it into plates. Also in this case, by appropriately selecting the thickness of the dummy plate 18, the thickness of the crystal wafers 14a and 14b and the thickness of the recessed portions 15a and 15b can be processed thinner. Each wafer thus obtained is cut into individual vibrating bars, electrodes are formed, and the frequency is adjusted in the same manner as in the second embodiment.

Further, in another modification of the second embodiment, as shown in FIG. 7, a laminated wafer in which a dummy plate 18 is bonded to the surface of the crystal wafer 14 on which the concave portion 15 is formed via an adhesive layer 17. 20 is used, and both sides thereof are similarly polished. Here, when the dummy plate 18 is made of a material softer than the crystal wafer 14, the polishing rate of the wafer is smaller than that of the dummy plate, so that the plate thickness can be polished with higher accuracy. On the contrary, when the material of the dummy plate is harder than the wafer, the polishing rate of the wafer is higher than that of the dummy plate, so that the polishing time is shortened. This laminated wafer 2
No. 0 is also separated into a wafer and a dummy plate with a peeling liquid after polishing, the wafer is cut into individual vibrating pieces, and electrodes are formed.
The frequency is adjusted.

FIG. 8 schematically shows a process of manufacturing an inverted mesa AT-cut quartz crystal vibrating piece having a convex cross section according to the third embodiment of the present invention using the second embodiment. In this embodiment, similarly to the second embodiment, the recessed portions 21a and 21b, which serve as the vibrating portions of the inverted mesa type vibrator, are formed to have a predetermined plate thickness of 2.
For example, a silicon-based or polyolefin-based adhesive 23 having flexibility after being hardened from the crystal wafers 22a and 22b.
5B and laminated as shown in FIG. 5B.
Are formed (FIG. 8A). This adhesive can also be applied by the method using the capillarity shown in FIG. 2, and likewise preferably has photocurability.

Next, both surfaces of the laminated wafer 24 are polished by the conventional polishing method similar to that of the first embodiment.
The laminated wafer 24 is placed between the upper and lower surface plates 25 and 26 of the polishing apparatus.
When polishing with slurry 27 while pressing both upper and lower surfaces of
Thin portions 28a, 2 of each crystal wafer in which recesses are formed
Since the adhesive 23 has flexibility, 8b is bent so as to partially project into the concave portions 21a and 21b by the pressure from the upper and lower surface plates 25 and 26, as shown in an enlarged view in FIG. 8B.
Since the polishing surface of each crystal wafer has a depression corresponding to the bending and the slurry easily accumulates in the depression, the upper and lower surfaces of the laminated wafer are uniformly polished in this bending state, and the respective quartz wafers are evenly polished. It

As shown in FIG. 8C, when the upper and lower surfaces of the laminated wafer 24 are polished to a desired plate thickness, preferably to such an extent that the recesses are eliminated, the thin portions 28a and 28b have thick central portions and peripheral portions. It becomes a thin, ultra-thin convex shape facing the concave side. As a result, when the laminated wafer is taken out of the polishing apparatus and released from the pressing force of the upper and lower surface plates, the bending of the thin portions 28a and 28b returns to the original side, and the central portion is removed as shown in FIG. 8D. The convex ultrathin-wall vibrating portions 29a and 29b, which are thick and thin around the concave portion, are formed facing the opposite side to the concave portion. Also in this embodiment, the thickness of each wafer 22a, 22b and the recessed portion 21a,
Since the depth of 21b is known in advance, the laminated wafer 24
By controlling the polishing processing amount of, it is possible to finally adjust the plate thickness of each wafer and the thickness of the ultra-thin portion with high accuracy.

Similar to the second embodiment, the polished laminated wafer is dipped in a stripping solution for a predetermined time to dissolve the adhesive 23 and separated into individual crystal wafers, and then the predetermined outer dimensions and shapes are obtained. Cut into vibrating pieces. As shown in FIGS. 9A and 9B, the vibrating piece 30 has an ultra-thin wall vibrating portion 29 formed by the concave portion 21 and a thick supporting portion 31 around the vibrating portion 31, and the vibrating portion has a concave sectional shape. It is an inverted mesa type that has a convex shape facing away from the portion, that is, outward.

The electrode of the vibrating piece 30 is an ultra thin wall vibrating portion 29.
On both sides, that is, on the inner side and the back side of the concave portion 21, are formed after or before the cutting into the vibrating piece and the frequency is adjusted, and finally, by mounting the vibrating piece in the package, a desired high frequency can be obtained. An inverted mesa AT-cut crystal unit having a high spurious suppression effect can be obtained. The electrodes are formed by a conventional method such as mask vapor deposition or plating using photolithography, but according to the present invention, since both surfaces of the vibrating portion 29 on the inner side and the back side of the concave portion 21 are relatively flat, the electrode film is not formed. A film can be formed easily and with high accuracy.

In this embodiment, also for the laminated wafer having the three-layer structure shown in FIG. 6, two crystal wafers and a dummy plate are hardened and then bonded together with an adhesive having flexibility,
It can be applied similarly. In this case, there is an advantage that the crystal wafer can be thinly polished as compared with the embodiment of FIG. In addition, this embodiment also applies to the laminated wafer of FIG.
It can be applied in the same way by bonding the crystal wafer and the dummy plate with an adhesive having flexibility after curing. Due to the difference in polishing rate between the crystal wafer and the dummy plate, highly accurate polishing of the plate thickness is possible. Alternatively, the advantage of shortening the polishing time can be obtained.

FIG. 10 schematically shows a process according to a modification of FIG. 8 for manufacturing an inverted mesa AT-cut quartz crystal resonator element having a similar convex cross section. In this example,
Similarly, when forming the laminated wafer 24 including the two crystal wafers 22a and 22b in which the recesses 21a and 21b are formed, the adhesive 32 is not completely filled in the recesses as shown in FIG. 10A. In this case, the adhesive is applied only to the recessed portion forming surface of one crystal wafer 22b by using a conventional method such as spray coating, electrostatic coating or transfer method, and the recessed portion forming surface of the other crystal wafer 22a is applied thereto. It is done by pasting. Further, the adhesive is preferably a silicone-based or polyolefin-based adhesive, which similarly has flexibility after curing, and further preferably has photocurability.

Next, as in the case of FIG. 8, the laminated wafer 24
The upper and lower surfaces of the above are polished with the slurry 27 while being pressed between the upper and lower surface plates 25 and 26 of the polishing apparatus. Since there are sufficient voids in the recesses not filled with the adhesive, the thin portions 28a and 28b of each crystal wafer are more easily bent than in the case of FIG. As shown in the enlarged view of FIG. 10B, the upper and lower surfaces of the laminated wafer 24 have a desired thickness in the state where the thin portions are bent in the recessed portions 21a and 21b, and preferably the upper and lower surfaces are not depressed due to the bending. Grind uniformly to a certain degree. As a result, the thin portions 28a and 28b have an ultrathin convex shape facing the recessed portion side as shown in FIG. 10C, and when released from the pressing force of the upper and lower surface plates, the bending returns to the original side. The convex ultra-thin wall vibrating portions 29a and 29b facing the opposite side of the concave portion are formed (FIG. 10D). When the laminated wafer is immersed in a peeling liquid for a predetermined time to dissolve the adhesive 32, the laminated wafer is separated into individual quartz wafers having a desired thickness, and the vibrating section shown in FIG. It is possible to obtain an inverted-mesa-type vibrating element that forms

FIG. 11 shows a modification of the embodiment shown in FIG. 10, in which one of the crystal wafers in the laminated wafer is replaced with a dummy plate 33. The laminated wafer 34 of this modification is formed by spin coating, spray coating,
A conventional method such as electrostatic coating or transfer is used to coat only the bonding surface of the flat dummy plate 33, and the crystal wafer 2
The adhesive can be prevented from entering the concave portion 21 by bonding the concave portion forming surfaces of No. 2 together.

In another modified example of FIG. 10 shown in FIG. 12, a laminated wafer 36 has two crystal wafers 22a and 22b on both sides of a dummy plate 33 with an adhesive 35, and the recessed portion forming surfaces thereof are opposed to each other. It has a three-layer structure in which the layers are bonded together.
Similarly, the adhesive is applied only to both sides of the flat dummy plate 33 by a conventional method such as spin coating, spray coating, electrostatic coating or transfer method, and the concave portion forming surface of each crystal wafer is bonded to this. , Make sure that the adhesive does not enter the concave portions 21a and 21b. Therefore, in the case of FIGS. 11 and 12, the adhesive does not need to be a silicone-based or polyolefin-based adhesive having flexibility after curing, but an adhesive having a photo-curing property is preferable from the viewpoint of easy processing.

The laminated wafer 3 shown in either FIG. 11 or FIG.
Also in Nos. 4 and 36, the thin portions 28, 28a and 28b of the respective wafers are bent into the corresponding recesses during the polishing process as in the embodiment of FIG. 10, and after the polishing process, the protrusions facing the other side of the recesses are formed. It is possible to obtain an inverted mesa-type vibrating piece in which a super-thin-wall vibrating portion having a shape is formed and the vibrating portion has an outwardly convex cross-sectional shape as shown in FIG. In the case of FIG. 11,
Due to the difference in polishing rate between the crystal wafer and the dummy plate, the plate thickness can be polished more accurately or the polishing time can be shortened.
In the case of 2, it is possible to polish two crystal wafers at the same time uniformly and thinner.

FIG. 13 shows an inverted mesa type A having a convex cross section.
9 schematically shows a process according to another modification of FIG. 8 for manufacturing a T-cut quartz crystal resonator element. In this embodiment, as shown in FIG. 13A, a laminated wafer 37 is formed by bonding a smooth crystal wafer 38 having no recesses and a dummy plate 40 having a large number of recesses 39 formed on one surface thereof with an adhesive 41. Configure together. Each recess is formed at a position where the piezoelectric vibrating piece of the crystal wafer is to be processed. Adhesive 4
11 is applied to only the bonding surface of the flat crystal wafer 38 by the same method as that shown in FIGS. 11 and 12, and the concave portion forming surface of the dummy plate 40 is bonded to this, so that the adhesive is applied to the concave portion 39. Do not fill. The adhesive is a silicone-based or polyolefin-based adhesive that has flexibility after curing, and preferably has photocurability.

Next, the upper and lower surfaces of the laminated wafer 37 are polished with the slurry 27 while being pressed between the upper and lower surface plates 25 and 26 of the polishing apparatus. The portion 42 of the crystal wafer corresponding to the recess 39 is partially bent by the pressing force of the upper and lower surface plates so as to project into the recess as shown in the enlarged view of FIG. 13B. In this manner, with the wafer portion 42 bent, both surfaces of the laminated wafer are uniformly polished to a desired plate thickness, preferably to the extent that the dent due to bending is eliminated from the polished surface of the crystal wafer 38 (FIG. 13C). Due to the difference in polishing rate between the quartz wafer and the dummy plate, the plate thickness can be more accurately polished, or the polishing time can be shortened.

After the polishing, when the pressing force of the upper and lower surface plates is released from the laminated wafer, the wafer portion that has been bent toward the recessed portion returns to its original state, and the protrusion 43 having a shape corresponding to the bending is formed.
It is formed on the opposite wafer polishing surface as shown in 3D.
After that, the adhesive 41 is dissolved with a peeling liquid to separate the quartz wafer from the dummy plate, and the recessed portion 44 is formed on the opposite side of the protrusion 43. A convex-shaped ultra-thin vibration part can be obtained.

FIG. 14 shows a modified example of the embodiment shown in FIG. 13, in which a laminated wafer 45 is made up of two smooth two-sided wafers having a dummy plate 46 having concave portions formed on both sides thereof and having no concave portions on both sides. It has a three-layer structure in which crystal wafers 38a and 38b are bonded with an adhesive 41. Similarly, each recess is formed at a position where the piezoelectric vibrating piece of the crystal wafer is to be processed. The adhesive 41 is a silicone-based or polyolefin-based adhesive that is also flexible after curing, and preferably has photo-curability, and is applied only to the bonding surfaces of both crystal wafers by the same method. The surfaces of the dummy plate 46 on which the concave portions are formed are bonded together so that the concave portions are not filled with the adhesive.

When the upper and lower surfaces of the laminated wafer 45 are similarly polished, the portions 42a and 42b of the crystal wafer corresponding to the concave portions 39a and 39b are bent, and in this state, both surfaces are uniformly formed to a desired thickness, preferably. Is processed to the extent that the dent due to bending disappears from the polished surface of the crystal wafer 38. As a result, two crystal wafers can be processed uniformly and thinner, and the adhesive 41 is melted to separate the crystal wafers into individual crystal wafers. Is formed, and a convex-shaped ultra-thin vibrating portion facing the opposite side is obtained.

Usually, it is preferable to apply the adhesive to the surface of a smooth quartz wafer or a dummy plate having no recesses in order to make the thickness uniform. However, FIG. 13 and FIG.
In the fourth embodiment, it is possible to apply it to the surface of the dummy plate in which the concave portion is formed, and in that case, since the adhesive does not adhere to the quartz wafer portions 42, 42a, 42b corresponding to the concave portion, curing is performed. Even if the adhesive is not flexible later, there is no fear of hindering the bending. Further, when the adhesive has flexibility after curing, even if it is completely filled in the concave portions 39, 39a, 39b of the dummy plates of the laminated wafers 37, 45,
Since the quartz wafer portion corresponding to the concave portion can be bent as in the embodiment of FIG. 8, it is possible to form the same ultrathin-wall vibrating portion having a convex cross section.

Although the preferred embodiments of the present invention have been described above in detail, the present invention can be implemented by making various modifications and changes to the above embodiments. For example, the polishing method of the present invention can be similarly applied when polishing a thin plate of a piezoelectric material other than quartz and various other brittle materials. In addition, the laminated wafer can be attached using an adhesive other than those described above, and the same operation and effect can be obtained by the handling suitable for the property of the adhesive used.

[0077]

Since the present invention is constructed as described above, it has the following special effects. According to the thin plate polishing method of the present invention, a laminated plate obtained by sticking substrates together with an adhesive is used as one substrate, and both sides thereof are subjected to polishing, so that the conventional carrier and polishing processing apparatus are used as they are. Each board is at least 1 of the conventional board thickness
Since it can be thinly and precisely polished to a thickness of / 2, and the toughness of the adhesive makes the laminated plate have greater strength than a single substrate of the same thickness, damage during polishing is prevented, and the quality and The yield can be improved and the cost can be reduced.

Further, according to the method for manufacturing a piezoelectric vibrating piece of the present invention, a piezoelectric vibrating piece having a thinner plate thickness than the conventional one is used by using a laminated plate in which wafers having the same outer dimensions as those of the conventional one are similarly bonded with an adhesive. Since it can be manufactured without lowering the yield and yield,
High-frequency piezoelectric vibrators can be mass-produced because high-frequency piezoelectric vibrators can be easily realized and production efficiency can be improved by externally machining the piezoelectric vibrating piece after polishing the wafer. Will be possible.

Furthermore, a concave portion is formed in advance on the bonding surface of the dummy plate or the wafer in accordance with the position of the piezoelectric vibrating piece, and both surfaces of the laminated plate are uniformly formed with the wafer partially bent in the concave portion. By performing polishing, a protrusion can be formed at a position corresponding to the vibrating portion of the piezoelectric vibrating piece on the polished surface of the wafer, so that a so-called reverse mesa type AT-cut piezoelectric vibrating piece having a large energy trapping effect and an excellent spurious suppressing effect. Can be easily manufactured in wafer units.

[Brief description of drawings]

FIG. 1 is a flowchart showing a process of manufacturing a quartz crystal resonator element according to a first embodiment of the present invention.

FIG. 2 is a diagram schematically showing a process of bonding wafers to form a laminated plate.

3A is a diagram showing a process of forming a laminated plate of a modified example of the first embodiment, and FIG. 3B is a partially enlarged sectional view of the laminated plate.

FIG. 4 is a flowchart showing a process of manufacturing an inverted mesa-type crystal vibrating piece according to the second embodiment of the present invention.

5A is a sectional view of a wafer used in the second embodiment, FIG.
FIG. 6B is a cross-sectional view showing a laminated plate to which these are attached.

FIG. 6 is a sectional view showing a modified example of the laminated board of the second embodiment.

FIG. 7 is a sectional view showing another modification of the laminated board of the second embodiment.

8A to 8D are views showing a process of manufacturing an inverted mesa-type crystal vibrating piece having a convex cross section according to the third embodiment of the present invention in the order of steps, and particularly, FIGS. Sectional drawing to show.

9A is a perspective view of an inverted mesa-type crystal vibrating piece having a convex cross-section according to the present invention, and FIG. 9B is a cross-sectional view taken along line IX-IX in FIG.

10A to 10D are process diagrams of a process of manufacturing the inverted mesa-type crystal vibrating piece of FIG. 9 according to the modified example of FIG.
Sectional drawing which expands a figure from FIG.

11 is a cross-sectional view showing a laminated wafer according to a modified example of FIG.

12 is a cross-sectional view showing a laminated plate having a three-layer structure sandwiching a dummy plate according to another modification of FIG.

13A to FIG. 13D are views of FIG. 9 according to another modified example of FIG.
6A to 6D are sectional views showing the steps of manufacturing the inverted mesa-type crystal vibrating piece of FIG.

14 is a cross-sectional view showing a laminated plate having a three-layer structure sandwiching a dummy plate according to the modified example of FIG.

[Explanation of symbols]

1 tank 2 adhesive 3 Crystal wafer 4 backrest 5 Crystal wafer 6 laminated wafers 7 table 8 metal plates 9 weights 10 UV lamp 11 dummy board 12 Adhesive layer 13 Laminated wafer 14, 14a, 14b Crystal wafer 15, 15a, 15b Recessed part 16 laminated wafers 17 Adhesive layer 18 dummy board 19, 20 Laminated wafer 21, 21a, 21b Recessed part 22, 22a, 22b Crystal wafer 23 Adhesive 24 laminated wafers 25 Upper surface plate 26 Lower surface plate 27 slurry 28, 28a, 28b Thin part 29, 29a, 29b Vibration part 30 vibrating pieces 31 Support 32 adhesive 33 dummy plate 34 Laminated wafer 35 Adhesive 36, 37 laminated wafers 38, 38a, 38b Crystal wafer 39, 39a, 39b Recessed portion 40 dummy plate 41 adhesive 42 Wafer part 43 protrusions 44 recess 45 laminated wafers 46 dummy plate

─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-11-297650 (JP, A) JP-A-9-64321 (JP, A) JP-A-2000-277826 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/304 B24B 37/00 H03H 3/02

Claims (15)

(57) [Claims] 1. A laminated plate is formed by bonding two wafers made of a piezoelectric material with an adhesive agent sandwiching a dummy plate .
Both sides of the laminated plate are polished to make the wafer a plate thickness of a desired piezoelectric vibrating piece, and the adhesive is removed and separated before or after processing to the desired external dimensions of the piezoelectric vibrating piece. have a step, the lamination surface of the dummy plate, previously
A method of manufacturing a piezoelectric vibrating piece, wherein a concave portion is formed in accordance with the position of the piezoelectric vibrating piece. 2. A wafer made of a piezoelectric material and a dummy plate are bonded together with an adhesive to form a laminated plate, and both surfaces of the laminated plate are polished to make the wafer a desired piezoelectric vibrating reed thickness. after or processed before processing the outer dimensions of the desired piezoelectric vibrating piece, have a step of separating and removing the adhesive previously the piezoelectric vibrating piece cemented surface of the dummy plate
A method of manufacturing a piezoelectric vibrating piece, wherein a concave portion is formed in accordance with the position of . 3. A method of manufacturing a piezoelectric vibrating piece according to claim 1 or 2, characterized in that the formation of the pre-recess in mating surface bonded of the wafer. 4. A laminated plate is formed by adhering two wafers made of a piezoelectric material with an adhesive, and both surfaces of the laminated plate are polished to obtain the desired thickness of the piezoelectric vibrating reed. Before or after processing to the external dimensions of the piezoelectric vibrating reed, the step of removing and separating the adhesive is included.
Then, a method for manufacturing a piezoelectric vibrating piece is characterized in that a concave portion is formed in advance on the bonding surface of the wafer . 5. The method of manufacturing a piezoelectric vibrating piece according to claim 4 , wherein the two wafers are bonded to each other with an adhesive while sandwiching a dummy plate to form the laminated plate. 6. A wafer made of a piezoelectric material and a dummy plate are bonded together with an adhesive to form a laminated plate, and both surfaces of the laminated plate are polished to make the wafer a desired piezoelectric vibrating plate thickness. after or processed before processing the outer dimensions of the desired piezoelectric vibrating piece, it has a step of separating and removing the adhesive, <br/> to the formation of the previously recessed portion in the lamination surface of the wafer A method for manufacturing a piezoelectric vibrating reed characterized by the above. 7. The method of manufacturing a piezoelectric vibrating piece according to claim 2 , wherein the hardness of the wafer is different from the hardness of the dummy plate. 8. The method of manufacturing a piezoelectric vibrating piece according to claim 7 , wherein a concave portion is formed in advance on the bonding surface of the dummy plate in accordance with the position of the piezoelectric vibrating piece. The method according to claim 9, wherein the adhesive, the piezoelectric vibration according to any one of claims 1 to 8, characterized in that applied to the cemented surface of the wafer or a dummy plate so as not to completely fill the recess Piece manufacturing method. Wherein said adhesive, to claim 1, characterized in that the nature of a flexible after curing
10. The method for manufacturing a piezoelectric vibrating piece according to any one of 9 above. 11. to claim 1, characterized by further comprising the step of pre-finishing the cemented surface of the wafer
11. The method for manufacturing a piezoelectric vibrating piece according to any one of 10 . 12. The adhesive has a photo-curing property, and further comprises a step of irradiating the laminated plate with light to cure the adhesive before the polishing process.
12. The method for manufacturing a piezoelectric vibrating piece according to any one of 1 to 11 . 13. The piezoelectric vibrating piece according to claim 12 , further comprising a step of applying a uniform pressure to the entire surface of the laminated plate to adjust the thickness thereof before the irradiation of the light. Manufacturing method. 14. By immersed in the stripping solution of the adhesive, the piezoelectric vibrating piece according to any one of claims 1 to 13, characterized in that the removal by dissolving the adhesive of the laminate Production method. 15. The piezoelectric resonator element according to any of claims 1 to 14, wherein the piezoelectric material is quartz
Manufacturing method.