CN114905406B - System and method for thinning inverted packaging chip substrate - Google Patents

System and method for thinning inverted packaging chip substrate Download PDF

Info

Publication number
CN114905406B
CN114905406B CN202210423266.1A CN202210423266A CN114905406B CN 114905406 B CN114905406 B CN 114905406B CN 202210423266 A CN202210423266 A CN 202210423266A CN 114905406 B CN114905406 B CN 114905406B
Authority
CN
China
Prior art keywords
limiter
thinning
machine table
polishing machine
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202210423266.1A
Other languages
Chinese (zh)
Other versions
CN114905406A (en
Inventor
池雅庆
梁斌
陈建军
袁珩洲
罗登
郭阳
胡春媚
刘必慰
宋睿强
吴振宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National University of Defense Technology
Original Assignee
National University of Defense Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National University of Defense Technology filed Critical National University of Defense Technology
Priority to CN202210423266.1A priority Critical patent/CN114905406B/en
Publication of CN114905406A publication Critical patent/CN114905406A/en
Application granted granted Critical
Publication of CN114905406B publication Critical patent/CN114905406B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a thinning system and a thinning method for a substrate of an inverted packaged chip, wherein the system comprises a polishing machine table, a polishing disc, a first limiter, a liquid supply device and a second limiter, wherein the polishing disc is arranged on the polishing machine table, and the polishing machine table controls the rotation or the rest of the polishing disc around the axial lead of the polishing disc; the first limiter and the second limiter are placed on the grinding disc; the liquid feeder is arranged on the polishing machine table, and the polishing machine table controls the liquid feeder to drop the grinding liquid on the grinding disc; the side surface of the first limiter is contacted with the side surface of the second limiter. The method is implemented based on the system described above. The invention has the advantages of simple and compact structure, simple and convenient operation, good thinning effect, capability of greatly improving the yield and the like.

Description

System and method for thinning inverted packaging chip substrate
Technical Field
The invention mainly relates to the field of integrated circuit chips, in particular to a system and a method for thinning a substrate of an inverted packaging chip, which are particularly suitable for thinning the substrate of an integrated circuit chip with a flip-chip structure.
Background
In order to improve the heat dissipation capability and performance of integrated circuit chips, high-end integrated circuit chips such as microprocessors are largely packaged by adopting Flip Chip (Flip Chip) structures. The flip-chip structure is shown in fig. 1, and the die 300 is composed of a lower substrate 100 and an upper interconnection layer 200. In flip-chip packaging, first, a metal ball 400 (bump) made of tin-lead or tin-silver is deposited on a first surface 500 (pad) of an upper interconnection layer 200 of a die 300 (die), and then the die 300 is flipped over and heated, and the melted metal ball 400 is bonded to a second surface 700 (pad) on a substrate 600, thereby connecting the die 300 to the substrate 600. The bottom surface of the substrate 600 is connected to the solder balls 800. At this time, the upper interconnection layer 200 of the die 300 is connected to the package substrate 600 downward, and the lower substrate 100 of the die 300 is exposed upward. To ensure that die 300 has sufficient mechanical strength during packaging without damage, substrate 100 of die 300 is often over 200 microns thick.
Before performing tests such as a single particle test and a laser irradiation test on a flip chip, it is often necessary to thin the thickness of the substrate 100 of the flip chip from 200 micrometers to 20 micrometers.
In the conventional flip chip thinning method, a fixture fixed with a flip chip is locked on a grinding mechanical arm, a substrate 100 of the chip faces downwards, the mechanical arm gradually makes the substrate 100 of the chip contact with a grinding turntable downwards, and a force is applied to grind and thin.
In order to enable the flip chip already soldered on the circuit board to also perform substrate thinning, there is a chinese patent application No. 201910945718.0 issued by practitioners, which discloses a method of thinning flip chip on a circuit board, a grinding bit and a fixture base. According to the method, the larger grinding turntable is replaced by the smaller grinding drill bit, and the grinding mechanism only grinds at the position of the flip chip, so that the rest part of the circuit board is not affected.
However, the thinning success rate of the above two methods is greatly affected by the inclination degree of the polishing mechanical arm and the polishing drill with respect to the substrate 100 plane of the chip, and when the polishing plane is inclined with respect to the substrate 100 plane of the flip chip, the polished substrate 100 is also inclined, so that the thickness of the substrate 100 is not uniform throughout the chip, and the yield of the chip is reduced. In practice, once the thinned chip yield is about 50% when the thickness of the substrate 100 is thinned to about 50 μm, the thinned chip yield has been reduced to nearly 0 when the thickness of the substrate 100 is thinned to about 20 μm.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: aiming at the technical problems existing in the prior art, the invention provides the inverted packaging chip substrate thinning system and method which have the advantages of simple and compact structure, simple and convenient operation, good thinning effect and capability of greatly improving the yield.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a chip substrate thinning system of package falls, includes polishing machine platform, abrasive disc, first stopper, liquid supply ware and second stopper, the abrasive disc is installed on polishing machine platform, is controlled by polishing machine platform and rotates or be static around the axial lead of abrasive disc; the first limiter and the second limiter are placed on the grinding disc; the liquid feeder is arranged on the polishing machine table, and the polishing machine table controls the liquid feeder to drop the grinding liquid on the grinding disc; the side surface of the first limiter is contacted with the side surface of the second limiter.
As a further improvement of the system of the invention: the second limiter comprises a first rotating wheel, a second rotating wheel and a fork-shaped support, wherein the fork-shaped support is arranged on the polishing machine table, and the first rotating wheel and the second rotating wheel are arranged below two fork fingers of the fork-shaped support.
As a further improvement of the system of the invention: the side surfaces of the first rotating wheel and the second rotating wheel are contacted with the side surface of the first limiter, and the polishing machine table controls the first rotating wheel and the second rotating wheel to rotate or be static around the respective axial leads.
As a further improvement of the system of the invention: the diameter of the bottom surface of the first limiter does not exceed the radius of the grinding disc.
As a further improvement of the system of the invention: the first limiter comprises a pressing block, a thimble and a limiting film; the opposite corners of the pressing block are provided with holes, and internal threads are arranged in the holes; the side of the pressing block is contacted with the side of the first rotating wheel and the side of the second rotating wheel of the second limiter.
As a further improvement of the system of the invention: the thimble is nail-shaped and is provided with external threads; the ejector pins are correspondingly and respectively attached and installed in holes of the pressing block.
As a further improvement of the system of the invention: the thimble is provided with a groove at the top, and the tool is inserted into the groove to rotate the thimble, so that the thimble moves up and down relative to the pressing block.
As a further improvement of the system of the invention: the limiting film is a hard plastic film with the top surface being sticky.
As a further improvement of the system of the invention: the limiting film is provided with round holes in four opposite angles in a hollowed mode, and the ejector pins extend out of the round holes; four limit grooves are hollowed in the middle of the round hole, and the shape of each limit groove is consistent with the outline of the flip chip, so that the flip chip is clamped into the limit groove without movement.
If the thickness of the substrate of the flip chip after the required thinning is H1, the sum of the thickness of the interconnection layer of the flip chip, the height of the bump, the thickness of the substrate and the height of the solder ball is H2, a thinning method based on the thinning system comprises the following steps:
step S1: rotating the four ejector pins of the first limiter to enable the bottoms of the ejector pins to extend out to be H1 +H2micron relative to the bottoms of the pressing blocks;
step S2: selecting a limiting film, processing a round hole and a limiting groove, and attaching the viscous top surface of the limiting film to the bottom surface of a pressing block of the first limiter to enable the ejector pin to extend out of the round hole;
step S3: clamping four flip chips to be thinned into four limit grooves of a limit film, wherein solder balls of the flip chips to be thinned are contacted with the bottom surface of a pressing block, and the substrate of the flip chips to be thinned is exposed;
step S4: placing a first limiter on the grinding disc, wherein the side surface of a pressing block of the first limiter is contacted with the side surface of a second limiter, and a substrate of the flip chip to be thinned is contacted with the grinding disc;
step S5: the polishing machine table controls the liquid feeder to drop the grinding liquid on the grinding disc at a constant speed;
step S6: the polishing machine table controls the grinding disc to rotate in the direction from the first limiter to the second limiter;
step S7: the polishing machine table controls the first rotating wheel and the second rotating wheel of the second limiter to rotate and drives the first limiter to rotate around the axial lead of the first limiter;
step S8: when the bottom of the thimble of the first limiter is contacted with the surface of the grinding disc, the polishing machine table controls the grinding disc and the second limiter to be static, and the substrate thinning is completed.
Compared with the prior art, the invention has the advantages that:
1. according to the system and the method for thinning the inverted packaged chip substrate, 4 flip chips with the same thickness are symmetrically placed, and gravity pressing friction is carried out on the plane of the substrate instead of mechanical pressing friction through the pressing block, so that the stress of the chip substrate in the thinning process is ensured to be completely vertical, the extremely high parallelism between the thinning plane and the flip chip substrate is ensured, and the uniformity of the thinning depth of the plane of each chip substrate is also improved. The grinding disc rotates to enable the rotating wheels of the first limiter and the second limiter and the rotating wheels to have pressure, so that the rotating wheels can drive the first limiter to rotate, and the uniformity of the plane thinning depth of the chip substrate is further improved. In practice, when the thickness of the substrate is thinned to 20 micrometers, the yield of the thinned chip is close to 90 percent.
2. The system and the method for thinning the substrate of the inverted packaged chip have the advantages of simple and compact structure, simple and convenient operation, good thinning effect and capability of greatly improving the yield, and ensure the accuracy and the controllability of the thinning depth of the substrate by limiting the thinning depth by adopting the ejector pin with the preset height.
Drawings
Fig. 1 is a schematic diagram of a flip chip structure.
Fig. 2 is a schematic diagram of the overall structure of a flip-chip substrate thinning system.
Fig. 3 is a schematic side view of the first stop in a specific application of the invention.
Fig. 4 is a schematic bottom view of the first stopper in a specific application example of the present invention.
Fig. 5 is a schematic top view of a first stop in a specific application of the invention.
Fig. 6 is a schematic side view of a second stop in a specific application of the invention.
Fig. 7 is a schematic top view of a second stop in a specific application of the invention.
Legend description:
100. a substrate; 200. an interconnection layer; 300. a bare chip; 400. a metal ball; 500. a first surface; 600. a substrate; 700. a second surface; 800. solder balls; 1. a polishing machine table; 2. a grinding disc; 3. a first stopper; 4. a liquid supply device; 5. a second stopper; 6. briquetting; 7. a thimble; 8. a limiting membrane; 801. a limit groove; 9. a first wheel; 10. a second wheel; 11. fork-shaped bracket.
Detailed Description
The invention will be described in further detail with reference to the drawings and the specific examples.
As shown in fig. 2-7, the system for thinning the substrate of the inverted packaged chip of the present invention comprises: the polishing machine comprises a polishing machine table 1, a polishing disc 2, a first limiter 3, a liquid feeder 4 and a second limiter 5. Wherein:
the polishing machine table 1 is used for installing a grinding disc 2, a first limiter 3, a liquid feeder 4 and a second limiter 5.
In a specific application example, the polishing machine table 1 may be used to control the polishing disc 2 to rotate or be static around the axis, may be used to control the first rotating wheel 9 of the second limiter 5 to rotate or be static around the axis of the first rotating wheel 9, and may also control the second rotating wheel 10 of the second limiter 5 to rotate or be static around the axis of the second rotating wheel 10.
The grinding disc 2 is cylindrical and is arranged on the polishing machine table 1 and has a rough iron round surface; the grinding disc 2 can be controlled by the polishing machine table 1 to rotate or be static around the axial lead of the grinding disc 2;
the first limiter 3 is cylindrical and is placed on the grinding disc 2; the side surface of the first limiter 3 is contacted with the side surfaces of the first rotating wheel 9 and the second rotating wheel 10 of the second limiter 5;
the liquid feeder 4 is arranged on the polishing machine table 1, and the polishing machine table 1 can control the liquid feeder 4 to drop the grinding liquid on the grinding disc 2 at a constant speed.
In a specific application, the diameter of the bottom surface of the first limiter 3 does not exceed the radius of the grinding disc 2.
In a specific application example, the first limiter 3 comprises a pressing block 6, a thimble 7 and a limiting membrane 8; the pressing block 6 is a cylindrical stainless steel metal block, 4 holes are formed in 4 opposite angles (0 DEG, 90 DEG, 180 DEG and 270 DEG), and internal threads are formed in the holes. The sides of the pressing block 6 are contacted with the sides of the first rotating wheel 9 and the second rotating wheel 10 of the second limiter 5.
The thimble 7 is nail-shaped and is provided with external threads. The plurality of ejector pins 7 (for example, four ejector pins) are correspondingly and respectively attached and installed in holes (for example, four holes) of the pressing block 6. The thimble 7 is provided with a groove at the top, and can be inserted into the groove by using tools such as a screwdriver to rotate the thimble, so that the thimble 7 moves up and down relative to the pressing block 6. The bottom of the thimble 7 is conical or arc-shaped and is made of diamond or other high-hardness materials, and the friction between the thimble 7 and the grinding disc 2 does not change the extending height of the bottom of the thimble 7 relative to the bottom of the pressing block 6.
The limiting membrane 8 is a hard plastic membrane (such as polymethyl methacrylate) with an adhesive top surface. Four circular holes (one for each diagonal) are hollowed out at four diagonal angles (0 DEG, 90 DEG, 180 DEG and 270 DEG), and the thimble 7 extends out of the circular holes. Further, in the preferred embodiment, four limiting grooves 801 are hollowed out in the middle (45 °, 135 °, 225 °, 415 °) of the four hollowed-out circular holes, and the shape of the limiting grooves 801 is consistent with the outer contour of the flip chip, so that the flip chip can be clamped into the limiting grooves 801 without obvious movement. The thickness of the stopper film 8 is slightly smaller than the sum of the substrate thickness of the flip chip and the solder ball height. If the sum of the substrate thickness of the flip chip and the height of the solder balls is 500 micrometers, a hard plastic film having a thickness of 300 micrometers to 400 micrometers is preferable to fabricate the stopper film.
In a specific application example, the second limiter 5 includes a first runner 9, a second runner 10 and a fork-shaped bracket 11. The fork-shaped bracket 11 is arranged on the polishing machine table 1, and the first rotating wheel 9 and the second rotating wheel 10 are arranged below two fingers of the fork-shaped bracket 11. The side surfaces of the first rotating wheel 9 and the second rotating wheel 10 are contacted with the side surface of the first limiter 3, and the polishing machine table 1 can control the first rotating wheel 9 and the second rotating wheel 10 to rotate or be static around the respective axial leads.
Taking a specific application as an example, based on the above-mentioned system for thinning a flip chip substrate according to the present invention, the present invention further provides a thinning method, if the thickness H1 of the substrate of the flip chip after the required thinning is 20 micrometers, and the sum H2 of the thickness of the interconnection layer of the flip chip, the height of the bump, the thickness of the substrate and the height of the solder ball is 400 micrometers, the method for thinning the substrate of the flip chip is as follows:
step S1: the four ejector pins 7 of the first limiter 3 are rotated so that the bottoms of the ejector pins 7 protrude by a height h1+h2=420 micrometers with respect to the bottoms of the pressing pieces 6.
Step S2: selecting a limiting film 8 with the thickness of 250-350 microns, processing four hollow round holes and four limiting grooves 801, attaching the viscous top surface of the limiting film 8 to the bottom surface of a pressing block 6 of a first limiter 3, enabling four ejector pins 7 to extend out of the four hollow round holes, enabling the shape of the limiting grooves 801 to be consistent with the outline of a flip chip to be thinned, and symmetrically placing the positions of the four limiting grooves 801 relative to the center of the limiting film 8.
Step S3: the four flip chips to be thinned are clamped into the four limit grooves 801 of the limit film 8, the solder balls of the flip chips to be thinned are contacted with the bottom surface of the pressing block 6, and the substrate of the flip chips to be thinned is exposed.
Step S4: the first limiter 3 is placed on the grinding disc 2, the side face of the pressing block 6 of the first limiter 3 is contacted with the side faces of the rotating wheel 9 and the rotating wheel 10 of the second limiter 5, and the substrate to be thinned and the flip chip are contacted with the grinding disc 2.
Step S5: the polishing machine table 1 controls the liquid feeder 4 to drop the grinding liquid on the grinding disc 2 at a constant speed.
Step S6: the polishing machine table 1 controls the grinding disc 2 to rotate in a direction from the first limiter 3 to the second limiter 5.
Step S7: the polishing machine table 1 controls the first rotating wheel 9 and the second rotating wheel 10 of the second limiter 5 to rotate and drives the first limiter 3 to rotate around the axial lead of the first limiter 3.
Step S8: after the bottom of the thimble 7 of the first limiter 3 contacts with the surface of the grinding disc 2, the polishing machine table 1 controls the grinding disc 2 and the first rotating wheel 9 and the second rotating wheel 10 of the second limiter 5 to be static, and the substrate thinning is completed.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the invention without departing from the principles thereof are intended to be within the scope of the invention as set forth in the following claims.

Claims (9)

1. The inverted packaging chip substrate thinning system is characterized by comprising a polishing machine table (1), a polishing disc (2), a first limiter (3), a liquid feeder (4) and a second limiter (5), wherein the polishing disc (2) is arranged on the polishing machine table (1), and the polishing machine table (1) controls rotation or stillness around the axial lead of the polishing disc (2); the first limiter (3) and the second limiter (5) are placed on the grinding disc (2); the liquid feeder (4) is arranged on the polishing machine table (1), and the polishing machine table (1) controls the liquid feeder (4) to drop the grinding liquid on the grinding disc (2); the side surface of the first limiter (3) is contacted with the side surface of the second limiter (5); the first limiter (3) comprises a pressing block (6), a thimble (7) and a limiting membrane (8); the opposite corners of the pressing block (6) are provided with holes, and internal threads are arranged in the holes; the side surface of the pressing block (6) is contacted with the side surfaces of the first rotating wheel (9) and the second rotating wheel (10) of the second limiter (5); the thimble (7) is nail-shaped and is provided with external threads; the thimble (7) can move up and down relative to the pressing block (6).
2. The inverted packaged chip substrate thinning system according to claim 1, wherein the second limiter (5) comprises a first runner (9), a second runner (10) and a fork-shaped bracket (11), the fork-shaped bracket (11) is mounted on the polishing machine table (1), and the first runner (9) and the second runner (10) are mounted below two fingers of the fork-shaped bracket (11).
3. The inverted packaged chip substrate thinning system according to claim 2, wherein the side surfaces of the first rotating wheel (9) and the second rotating wheel (10) are in contact with the side surface of the first limiter (3), and the polishing machine table (1) controls the first rotating wheel (9) and the second rotating wheel (10) to rotate or stand around the respective axial lines respectively.
4. A system for thinning a flip-chip substrate according to claim 1, 2 or 3, characterized in that the diameter of the bottom surface of the first stopper (3) does not exceed the radius of the grinding disc (2).
5. The system for thinning the inverted packaged chip substrate according to claim 4, wherein the ejector pins (7) are respectively correspondingly and fittingly arranged in holes of the pressing block (6).
6. The system for thinning the substrate of the inverted packaged chip according to claim 5, wherein the ejector pins (7) are provided with grooves at the top, and the ejector pins (7) are rotated by a tool inserted into the grooves so that the ejector pins (7) move up and down relative to the pressing block (6).
7. The system for thinning the chip substrate of the inverted package according to claim 1, wherein the limit film (8) is a hard plastic film having an adhesive top surface.
8. The inverted packaging chip substrate thinning system according to claim 1, wherein the limiting film (8) is provided with round holes in four diagonal hollows, and the ejector pins (7) extend out of the round holes; four limit grooves (801) are hollowed out in the middle of the round hole, and the shape of the limit grooves (801) is consistent with the outline of the flip chip, so that the flip chip is clamped into the limit grooves (801) without movement.
9. A thinning method based on the thinning system according to any one of claims 1 to 8, characterized in that the steps comprise:
step S1: rotating the four ejector pins (7) of the first limiter (3) to enable the bottoms of the ejector pins (7) to extend out relative to the bottoms of the pressing blocks (6);
step S2: selecting a limiting film (8), processing a round hole and a limiting groove (801), and attaching the viscous top surface of the limiting film (8) to the bottom surface of a pressing block (6) of the first limiter (3) to enable the thimble (7) to extend out of the round hole;
step S3: clamping four flip chips to be thinned into four limit grooves (801) of a limit film (8), wherein solder balls of the flip chips to be thinned are contacted with the bottom surface of a pressing block (6), and the substrate of the flip chips to be thinned is exposed;
step S4: placing a first limiter (3) on the grinding disc (2), wherein the side surface of a pressing block (6) of the first limiter (3) is contacted with the side surface of a second limiter (5), and a substrate to be thinned and a flip chip are contacted with the grinding disc (2);
step S5: the polishing machine table (1) controls the liquid feeder (4) to drop the grinding liquid on the grinding disc (2) at a constant speed;
step S6: the polishing machine table (1) controls the grinding disc (2) to rotate in the direction from the first limiter (3) to the second limiter (5);
step S7: the polishing machine table (1) controls the first rotating wheel (9) and the second rotating wheel (10) of the second limiter (5) to rotate and drives the first limiter (3) to rotate around the axial lead of the first limiter (3);
step S8: after the bottom of the ejector pin (7) of the first limiter (3) is in contact with the surface of the grinding disc (2), the polishing machine table (1) controls the grinding disc (2) and the second limiter (5) to be static, and the substrate thinning is completed.
CN202210423266.1A 2022-04-21 2022-04-21 System and method for thinning inverted packaging chip substrate Active CN114905406B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210423266.1A CN114905406B (en) 2022-04-21 2022-04-21 System and method for thinning inverted packaging chip substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210423266.1A CN114905406B (en) 2022-04-21 2022-04-21 System and method for thinning inverted packaging chip substrate

Publications (2)

Publication Number Publication Date
CN114905406A CN114905406A (en) 2022-08-16
CN114905406B true CN114905406B (en) 2023-06-16

Family

ID=82763906

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210423266.1A Active CN114905406B (en) 2022-04-21 2022-04-21 System and method for thinning inverted packaging chip substrate

Country Status (1)

Country Link
CN (1) CN114905406B (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6672947B2 (en) * 2001-03-13 2004-01-06 Nptest, Llc Method for global die thinning and polishing of flip-chip packaged integrated circuits
WO2013001719A1 (en) * 2011-06-29 2013-01-03 信越半導体株式会社 Polishing head and polishing apparatus
CN103114323B (en) * 2013-02-06 2016-05-25 中国科学院上海微系统与信息技术研究所 A kind of surface polishing method for GaN single crystalline substrate
CN205520900U (en) * 2016-01-25 2016-08-31 安徽东迅密封科技有限公司 A grinder for sealing member
CN108161711A (en) * 2017-12-28 2018-06-15 德淮半导体有限公司 Grinding wafer device and grinding head

Also Published As

Publication number Publication date
CN114905406A (en) 2022-08-16

Similar Documents

Publication Publication Date Title
US8129277B2 (en) Method of machining wafer
US7170185B1 (en) Solvent assisted burnishing of pre-underfilled solder bumped wafers for flipchip bonding
US7579211B2 (en) Flip-chip semiconductor device utilizing an elongated tip bump
US7329598B2 (en) Method of manufacturing a semiconductor device
US6416399B2 (en) Apparatus and methods for substantial planarization of solder bumps
CN111775001A (en) Grinding equipment for controlling grinding surface shape of wafer
CN211490781U (en) Wafer grinding equipment
JP5090610B2 (en) Solvent burnishing of pre-underfilled solder bump wafers for flip chip bonding
CN111730430B (en) Grinding apparatus with adjustable suction cup turntable
US20070102827A1 (en) Solvent Assisted Burnishing of Pre-Underfilled Solder-Bumped Wafers for Flipchip Bonding
CN114905406B (en) System and method for thinning inverted packaging chip substrate
JP5613439B2 (en) Cutting equipment
US8579678B2 (en) Grinding method for workpiece having a plurality of bumps
JP2793766B2 (en) Conductive paste transfer method
CN111823084B (en) Grinding apparatus with differential thread structure
CN111136572A (en) Manufacturing method of flip ceramic shell bonding pad and manufacturing method of flip ceramic shell
JP2001052323A (en) Head assembly and disk apparatus with the head assembly
US20230223289A1 (en) Self-aligning tip
US20040203187A1 (en) Method for manufacturing semiconductor wafer
JP2004335540A (en) Method of grinding resin substrate
KR100369392B1 (en) Wafer and Circuit Tape Pressurization Unit for Semiconductor Package Manufacturing
JP3323986B2 (en) Composite tungsten ball, method of manufacturing the same, semiconductor package using the same, and membrane-type probe device
JP2000164546A (en) Method for grinding semiconductor wafer
JP2000183138A (en) Wax bonding tool
CN115083929A (en) Method for CSP packaging

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant