CN111136572A - Manufacturing method of flip ceramic shell bonding pad and manufacturing method of flip ceramic shell - Google Patents

Manufacturing method of flip ceramic shell bonding pad and manufacturing method of flip ceramic shell Download PDF

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Publication number
CN111136572A
CN111136572A CN201911284212.6A CN201911284212A CN111136572A CN 111136572 A CN111136572 A CN 111136572A CN 201911284212 A CN201911284212 A CN 201911284212A CN 111136572 A CN111136572 A CN 111136572A
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China
Prior art keywords
grinding
ceramic
pad
flip
ceramic shell
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Pending
Application number
CN201911284212.6A
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Chinese (zh)
Inventor
李航舟
彭博
张崤君
刘冰倩
刘洋
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CETC 13 Research Institute
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CETC 13 Research Institute
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Priority to CN201911284212.6A priority Critical patent/CN111136572A/en
Publication of CN111136572A publication Critical patent/CN111136572A/en
Pending legal-status Critical Current

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009Pre-treatment of the bump connector or the bonding area
    • H01L2224/8103Reshaping the bump connector in the bonding apparatus, e.g. flattening the bump connector
    • H01L2224/81047Reshaping the bump connector in the bonding apparatus, e.g. flattening the bump connector by mechanical means, e.g. severing, pressing, stamping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

The invention provides a method for manufacturing a bonding pad of an inverted ceramic shell and a method for manufacturing the inverted ceramic shell, belonging to the technical field of ceramic packaging, wherein the method for manufacturing the bonding pad of the inverted ceramic shell is used for grinding the sintered bonding pad of the ceramic shell and comprises the following steps: arranging and bonding a plurality of ceramic shell bonding pads with consistent thickness with the grinding surfaces facing upwards on a grinding clamp; reversely buckling the grinding clamp on a grinding disc, starting a pressure plate on a pressure grinding machine, and pressing the grinding clamp on the grinding disc; and starting the grinding disc to rotate, driving the grinding fixture to simultaneously perform revolution and autorotation, and grinding the ceramic shell bonding pad fixed on the grinding fixture by using grinding fluid. According to the manufacturing method of the flip ceramic shell bonding pad, the coplanarity of the flip bonding pad is improved through grinding of the grinding machine, and the reliability of bonding between the chip and the bonding pad is improved during flip chip bonding.

Description

Manufacturing method of flip ceramic shell bonding pad and manufacturing method of flip ceramic shell
Technical Field
The invention belongs to the technical field of ceramic packaging, and particularly relates to a manufacturing method suitable for a bonding pad of an inverted ceramic shell and a manufacturing method of the inverted ceramic shell.
Background
In the field of ceramic packaging, wire bonding technology is currently the most common interconnection process. Specifically, after the chip is bonded to the mounting region of the ceramic housing, a gold wire or an aluminum wire is bonded to the corresponding bonding pad positions of the chip and the ceramic housing by thermosonic, thermocompression or ultrasonic techniques.
With the increase of the number of I/O terminals of the chip and the reduction of the characteristic size of the active device, the bonding positions are distributed around the chip, and the area of the chip cannot be effectively utilized. To avoid this problem, the size and pitch of the effective bond pads need to be reduced. The pitch of the bonding pad is continuously reduced, so that the process realization difficulty is increased, and due to the existence of the bonding wire, the performance is possibly reduced under the condition of high-speed and high-frequency application. Because the bonding positions of the ceramic shell are distributed around the chip, the occupied space area is large, and the traditional lead bonding technology cannot meet the development requirement of chip packaging of multi-chip miniaturization and high integration.
And the flip chip technology can meet the requirements of chip miniaturization and high-integration packaging. The flip chip technology is to form solder bumps on the active surface of the bare chip, and then flip the active surface down to connect the bumps with corresponding pad positions on the ceramic housing. The flip chip can realize the full-array distribution of the salient points on the surface of the chip, effectively reduces the interconnection space, reduces the packaging size and greatly improves the packaging density. The solder balls are used for replacing leads for connection, so that the resistance and the capacitance are relatively small, and meanwhile, the signal transmission path in the chip is reduced by full-array packaging, so that the signal transmission rate of the flip chip device is far higher than that of a device adopting lead bonding. When the flip chip is assembled, the convex points on the active surface of the chip are correspondingly bonded with the bonding pads on the bonding pads of the ceramic shell, and the form and position tolerance of the bonding pads on the ceramic shell is a key factor for reliable welding of the chip.
The current common method for the ceramic shell bonding pad is a multilayer ceramic co-firing technology: the method comprises the steps of punching interconnecting holes with a certain diameter on a raw ceramic belt material, realizing the metallization of the interconnecting holes by a metal slurry filling printing technology, printing a metalized pad (the size of the pad is larger than the diameter of a via hole) tungsten metal slurry on the position of the interconnecting holes by a graphic printing technology, combining the metalized interconnecting holes with a ceramic substrate to form a stable metalized pad through high-temperature sintering, and finally completing the preparation of a ceramic shell pad through a nickel plating and gold plating process.
Disclosure of Invention
The invention aims to provide a manufacturing method of a bonding pad of a flip ceramic shell, and aims to solve the problem that the connection of a flip chip is unreliable due to rough surface and poor coplanarity of the bonding pad when the chip is flipped.
In order to achieve the purpose, the invention adopts the technical scheme that: the method for manufacturing the flip-chip ceramic shell bonding pad is used for grinding the sintered ceramic shell bonding pad and comprises the following steps:
arranging and bonding a plurality of ceramic shell bonding pads with consistent thickness with the grinding surfaces facing upwards on a grinding clamp;
reversely buckling the grinding clamp on a grinding disc, starting a pressure plate on a pressure grinding machine, and pressing the grinding clamp on the grinding disc;
and starting the grinding disc to rotate, driving the grinding fixture to simultaneously perform revolution and autorotation, and grinding the ceramic shell bonding pad fixed on the grinding fixture by using grinding fluid.
As another embodiment of the present application, the arranging and bonding and fixing the grinding surface of the ceramic package pad with a plurality of uniform thicknesses upward on the grinding jig includes:
placing the grinding clamp on a heating table for heating;
coating a molten adhesive on the grinding clamp;
and uniformly bonding the ceramic shell bonding pads on the grinding fixture.
As another embodiment of the present application, before the grinding jig is turned over on the grinding disk, the platen on the pressure grinding machine is started to press the grinding jig on the grinding disk:
under the heating state, will grind anchor clamps and put on pressure platform the abrasive surface of ceramic package pad covers the protective layer, starts the pressure platform flattens the abrasive surface of ceramic package pad to extrude the bubble between adhesive and the ceramic package pad.
As another embodiment of the present application, the pressure stage is a pneumatic pressure stage.
As another embodiment of the present application, the supporting platform of the pressure table is a metal part.
As another embodiment of the present application, the protective layer is a nylon sheet or a polyvinyl chloride sheet.
As another embodiment of the present application, the reversing the grinding jig on the grinding disk, activating the pressure plate on the pressure grinding machine, and before pressing the grinding jig on the grinding disk, includes:
and starting the grinding disc, finishing the grinding disc by using grinding fluid, and checking and cleaning the annular groove on the grinding disc.
As another embodiment of this application, start the abrasive disc and rotate, drive grinding fixture carries out revolution and rotation simultaneously, utilizes lapping liquid, right after grinding the ceramic shell pad of last fixed of grinding fixture, carry out once cleaning to ceramic shell pad, include:
and taking down the grinding fixture, placing the grinding fixture on a heating table, heating until the adhesive on the surface of the ceramic shell bonding pad is molten, and taking down the ceramic shell bonding pad to clear the residual adhesive.
As another embodiment of the present application, a secondary cleaning of a pad of a ceramic case includes:
and wiping the welding disc of the ceramic shell, and removing the residual adhesive and the sticky dirt by using ultrasonic waves.
The invention aims to provide a manufacturing method of a flip ceramic shell, which comprises the following steps:
preparing a flip chip with bumps;
manufacturing a metallized through hole on the ceramic raw material, and sintering at high temperature to prepare a ceramic shell bonding pad;
grinding and preparing a ceramic shell bonding pad by adopting the method;
the chip is flip-chip mounted on the pad of the ceramic housing.
The manufacturing method of the flip ceramic shell bonding pad provided by the invention has the beneficial effects that: compared with the prior art, the manufacturing method of the flip ceramic shell bonding pad has the advantages that after ceramic is sintered, ceramic and metalized through holes with certain thickness are removed through grinding by the grinding machine, the coplanarity of the ground flip ceramic shell bonding pad can reach below 25um, the roughness of the surfaces of the ceramic shell and the bonding pad is reduced, the welding strength of the salient points and the bonding pad of a chip can be improved during flip chip welding, the welding reliability of the chip and the bonding pad is improved, and the quality of the ceramic shell is further improved.
The flip ceramic shell manufactured by the invention has the advantages that the welding pad of the ceramic shell is ground and then is welded and interconnected with the flip chip, so that the welding reliability of the chip and the welding pad can be improved, and the quality of the ceramic shell is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a first process flow diagram of a manufacturing method of a bonding pad of a flip-chip ceramic package according to an embodiment of the present invention;
fig. 2 is a schematic process flow diagram of a manufacturing method of a flip-chip ceramic package pad according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram illustrating a grinding process in a method for manufacturing a bonding pad of a flip-chip ceramic package according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a bonding pad of a flip-chip ceramic package according to an embodiment of the present invention;
fig. 5 is a schematic process flow diagram of a method for manufacturing a flip-chip ceramic package according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of the flip chip alignment shown in FIG. 5;
fig. 7 is a schematic structural view of the flip chip and printed board connection shown in fig. 5.
In the figure: 1. a platen; 2. a ceramic housing pad; 21. a ceramic housing; 22. a pad; 3. a grinding disk; 4. a turntable; 5. a chip; 6. salient points; 7. printing a board; 8. a non-conductive material.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, a method for fabricating a bonding pad of a flip-chip ceramic package according to the present invention will now be described. The manufacturing method of the flip ceramic shell bonding pad is used for grinding the sintered ceramic shell bonding pad 2 and comprises the following steps:
and S101, arranging and bonding a plurality of ceramic shell bonding pads 2 with consistent thickness with the grinding surfaces facing upwards on a grinding clamp.
S102, reversely buckling the grinding clamp on the grinding disc 3, starting the pressure plate 1 on the pressure grinding machine, and pressing the grinding clamp on the grinding disc 3.
And S103, starting the grinding disc 3 to rotate, driving the grinding fixture to simultaneously perform revolution and autorotation, and grinding the ceramic shell bonding pad 2 fixed on the grinding fixture by using grinding fluid.
Compared with the prior art, the manufacturing method of the flip ceramic shell bonding pad provided by the invention has the advantages that the ceramic and the metalized through holes with certain thickness are removed through grinding by the grinding machine after the ceramic is sintered, the coplanarity of the ground surface can reach below 25um, the surface smoothness of the ceramic shell 21 and the bonding pad 22 is improved, the welding strength of the salient points 6 and the bonding pad 22 of the chip 5 can be improved when the chip 5 is in flip welding, the welding reliability of the chip 5 and the bonding pad 22 is improved, and the quality of the ceramic shell is further improved.
During grinding, referring to fig. 3, the grinding disc 3 is started to rotate, the rotating speed is adjusted to a proper technological value, the linear speeds of the rotating disc 4 at different radiuses of the grinding disc 3 are different, and the grinding clamp bonded with the ceramic shell bonding pad 2 drives the grinding clamp to rotate under different linear speeds of the grinding disc 3. The movement of the grinding fixture relative to the turntable 4 is simultaneous revolution and rotation, so that the ceramic housing bonding pad 2 and the grinding disc 3 move relatively to each other, the grinding liquid is enabled to grind the surface of the ceramic housing bonding pad 2, and the ground ceramic housing bonding pad 2 is obtained, as shown in fig. 4, the mirror surface grinding effect is achieved, and the coplanarity of the grinding surfaces is improved.
In the embodiment, a plurality of ceramic shell bonding pads can be ground at one time, and the thicknesses of the ceramic shell bonding pads ground in the same batch are kept consistent, so that the ceramic shell bonding pads are convenient to compress and grind; when grinding ceramic housing bonding pads of different batches, the ceramic housing bonding pads 2 with different thicknesses can be ground.
In this embodiment, the requirement of the flip-chip technology on the shape and position tolerance of the pad of the ceramic case is as follows: the size of the bonding pad is 75um, the pitch is 150um, the coplanarity requirement is below 25um, and the position requirement is within 80 um. The coplanarity requirement below 15um can be achieved by grinding.
In this example, the surface of the ceramic package land 2 can achieve the mirror surface effect by the grinding by the pressure grinder, and the coplanarity of the ceramic package land 2 can be up to 15um or less.
In this embodiment, the grinding fluid may be a diamond abrasive, and other suitable grinding fluids in the prior art may also be used.
As a specific embodiment of the method for manufacturing a flip-chip ceramic package pad provided by the present invention, referring to fig. 1, in step S101, the step of arranging and bonding and fixing a plurality of ceramic package pads 2 with the same thickness on a grinding fixture with the grinding surfaces facing upward includes:
A. placing the grinding clamp on a heating table for heating;
B. coating a molten adhesive on the grinding clamp;
C. and uniformly bonding a plurality of ceramic shell welding discs 2 on the grinding fixture.
In this embodiment, the adhesive is paraffin wax, and is heated on the heating table to melt the adhesive, so that the ceramic case bonding pad 2 can be bonded on the grinding fixture to play a role in fixing, and after grinding, the adhesive is also conveniently removed by heating. The heating table melts the paraffin by adopting the temperature-adjustable heating table. The melting temperature depends on the melting point of the adhesive.
Referring to fig. 2, in step S104, before polishing, the polishing jig is placed on a pressure table under a heated state, a protective layer is covered on the polished surface of the ceramic package pad 2, the pressure table is activated to flatten the ceramic package pad 2, and air bubbles are squeezed out between the adhesive and the ceramic package pad 2. By squeezing out the air bubbles between the adhesive and the ceramic case pad 2, the reliability of the connection of the ceramic case and the grinding jig is improved. The pressure value of the pressure table is determined according to the thickness of the ceramic shell bonding pad 2, the technical parameters of the selected pressure table and the like, the pressure value is appropriate in size and cannot damage the ceramic shell bonding pad 2, and in the embodiment, the pressure value is 0.5Mpa-2 Mpa.
As a specific implementation of the embodiment of the present invention, the pressure table is a pneumatic pressure table.
As a specific implementation manner of the embodiment of the present invention, the supporting platform of the pressure table is made of metal to improve heat dissipation, and the grinding fixture is taken down from the pneumatic pressure table after the adhesive is cooled and cured, at this time, the ceramic housing pad 2 may be fixed on the grinding fixture.
As a specific implementation manner of the manufacturing method of the flip-chip ceramic package pad provided by the present invention, in step S104, the protective layer is made of one of plastic materials such as a nylon plate and a polyvinyl chloride plate. One deck protective layer tiles on ceramic case pad 2, avoids pressure platform and ceramic case pad 2 direct contact, avoids causing the damage to ceramic case pad 2's surface.
Referring to fig. 1 to 2, in step S102, the grinding fixture is turned over on the grinding plate 3, the pressure plate 1 of the pressure grinding machine is started, a proper pressure value is adjusted, and the grinding fixture is pressed on the grinding plate 3
Referring to fig. 2 and 3, step S105, namely, before the grinding fixture is turned over on the grinding disc 3, the method for manufacturing a flip-chip ceramic package pad starts the platen 1 on the pressure grinder and presses the grinding fixture on the grinding disc 3, includes: the grinding disc 3 is started, the grinding disc 3 is dressed by using grinding fluid, and the annular groove on the grinding disc 3 is checked and cleaned. Grinding and finishing are carried out on the grinding disc 3 in advance, so that the surface of the grinding disc 3 is free of rust, pits and protrusions, a smooth and flat support is provided for the ceramic shell bonding pad 2, and the grinding flatness of the subsequent ceramic shell bonding pad 2 is guaranteed. Because be equipped with the annular groove that is used for the discharge waste liquid on abrasive disc 3, before grinding ceramic shell pad 2, need clean up the impurity in the annular groove, avoid the lapping liquid to sneak into impurity and cause the damage to ceramic shell pad 2's grinding.
As a specific embodiment of the method for manufacturing a flip-chip ceramic package pad provided by the present invention, referring to fig. 2, after step S103, that is, after the grinding disc 3 is started to rotate, the grinding fixture is driven to simultaneously revolve and rotate, and after the ceramic package pad 2 fixed on the grinding fixture is ground by using the grinding fluid, the ceramic package pad 2 is cleaned for one time, which includes: and taking down the grinding fixture, placing the grinding fixture on a heating table, heating until the adhesive on the surface of the ceramic shell bonding pad 2 is melted, and taking down the ceramic shell bonding pad 2 to clear the residual adhesive. After the grinding is finished, because the adhesive is still left on the ceramic housing bonding pad 2, the ceramic housing bonding pad 2 can be taken down from the grinding fixture and put into a cleaning vessel for cleaning by heating on a heating table to melt the adhesive.
Referring to fig. 2, after the step S103 and after the first cleaning, the step S106 is performed to perform a second cleaning on the ceramic package pad 2, which includes: the ceramic shell bonding pad 2 is wiped clean, and the residual adhesive and the sticky dirt are removed by using ultrasonic waves, so that the ceramic shell bonding pad 2 is thoroughly cleaned.
Referring to fig. 5 to 7, the present invention further provides a method for manufacturing a flip-chip ceramic package, including:
in step S107, the flip chip 5 having the bumps 6 is prepared.
And step S108, manufacturing a metallized through hole on the ceramic raw material, and sintering at high temperature to prepare the ceramic shell bonding pad 2.
And step S109, grinding and preparing the ceramic shell bonding pad 2 by adopting the method.
Step S1010 is to flip chip 5 on ceramic package pad 2, and then to mount the ceramic package pad on printed board 7. The pores between the chip 5 and the ceramic shell 21 are filled with a non-conductive material 8.
On the flip-chip bonding pad, a conventional tungsten metallization, nickel and gold structure is adopted, low-melting point welding materials are made to infiltrate the metallization layer of the bonding pad of the ceramic shell through a 183 ℃ reflow soldering process of eutectic lead-tin welding materials, a self-aligning mechanism can be generated by surface tension, and then metallurgical bonding is formed between the chip 5 and the ceramic shell 21.
According to the invention, the bonding pad of the ceramic shell is welded and bonded with the flip chip after being ground, so that the bonding reliability of the chip and the bonding pad can be improved, and the quality of the ceramic shell is improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (10)

1. The manufacturing method of the flip ceramic shell bonding pad is characterized in that the ceramic shell bonding pad after sintering is ground, and the manufacturing method comprises the following steps:
arranging and bonding a plurality of ceramic shell bonding pads with consistent thickness with the grinding surfaces facing upwards on a grinding clamp;
reversely buckling the grinding clamp on a grinding disc, starting a pressure plate on a pressure grinding machine, and pressing the grinding clamp on the grinding disc;
and starting the grinding disc to rotate, driving the grinding fixture to simultaneously perform revolution and autorotation, and grinding the ceramic shell bonding pad fixed on the grinding fixture by using grinding fluid.
2. The method of manufacturing a flip-chip ceramic package pad of claim 1, wherein said arranging and adhesively securing a plurality of said ceramic package pads of uniform thickness with their abrasive surfaces facing upward on an abrasive fixture comprises:
placing the grinding clamp on a heating table for heating;
coating a molten adhesive on the grinding clamp;
and uniformly bonding the ceramic shell bonding pads on the grinding fixture.
3. The method of making a flip-chip ceramic package pad of claim 2, wherein before said reversing said grinding fixture over said grinding platen, activating a platen on a pressure grinder to press said grinding fixture against said grinding platen:
under the heating state, will grind anchor clamps and put on pressure platform the abrasive surface of ceramic package pad covers the protective layer, starts the pressure platform flattens the abrasive surface of ceramic package pad to extrude the bubble between adhesive and the ceramic package pad.
4. The method of making a flip-chip ceramic package pad of claim 3 wherein said pressure table is a pneumatic pressure table.
5. The method of making a flip-chip ceramic package pad of claim 3 wherein the support platform of the pressure stage is a metal part.
6. The method of making a flip-chip ceramic package pad of claim 3 wherein said protective layer is a nylon sheet or a polyvinyl chloride sheet.
7. The method of making a flip-chip ceramic package pad of claim 1, wherein said reversing said grinding fixture over a grinding platen, activating a platen on a pressure grinder, and pressing said grinding fixture against said grinding platen comprises:
and starting the grinding disc, finishing the grinding disc by using grinding fluid, and checking and cleaning the annular groove on the grinding disc.
8. The method of claim 1, wherein the step of starting the rotation of the grinding plate to drive the grinding fixture to simultaneously revolve and rotate, and the step of cleaning the ceramic housing pad after grinding the ceramic housing pad fixed on the grinding fixture with the grinding fluid comprises:
and taking down the grinding fixture, placing the grinding fixture on a heating table, heating until the adhesive on the surface of the ceramic shell bonding pad is molten, and taking down the ceramic shell bonding pad to clear the residual adhesive.
9. The method of claim 8, wherein the step of performing a secondary cleaning of the ceramic package pad comprises:
and wiping the welding disc of the ceramic shell, and removing the residual adhesive and the sticky dirt by using ultrasonic waves.
10. The manufacturing method of the flip ceramic shell is characterized by comprising the following steps:
preparing a flip chip with bumps;
manufacturing a metallized through hole on the ceramic raw material, and sintering at high temperature to prepare a ceramic shell bonding pad;
grinding a ceramic housing pad by the method of any one of claims 1-9;
the chip is flip-chip mounted on the pad of the ceramic housing.
CN201911284212.6A 2019-12-13 2019-12-13 Manufacturing method of flip ceramic shell bonding pad and manufacturing method of flip ceramic shell Pending CN111136572A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112687570A (en) * 2020-12-28 2021-04-20 中国电子科技集团公司第十三研究所 Test method for testing welding performance of welding pad of ceramic shell

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010036322A (en) * 2008-08-07 2010-02-18 Tokyo Seimitsu Co Ltd Apparatus and method for conditioning polishing pad
CN101853671A (en) * 2009-03-30 2010-10-06 Hoya株式会社 Method of manufacturing a substrate for a magnetic disk
CN106625204A (en) * 2017-01-06 2017-05-10 东莞市天域半导体科技有限公司 Back surface processing method for large-size SiC wafer
CN106847772A (en) * 2016-12-20 2017-06-13 中国电子科技集团公司第五十八研究所 For the flux-free flip chip method of ceramic package
CN108214260A (en) * 2016-12-22 2018-06-29 蓝思科技(长沙)有限公司 A kind of polishing process of ultra-thin sapphire wafer
CN108831869A (en) * 2018-06-06 2018-11-16 江苏省宜兴电子器件总厂有限公司 A kind of method of common burning porcelain shell pad preparation

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010036322A (en) * 2008-08-07 2010-02-18 Tokyo Seimitsu Co Ltd Apparatus and method for conditioning polishing pad
CN101853671A (en) * 2009-03-30 2010-10-06 Hoya株式会社 Method of manufacturing a substrate for a magnetic disk
CN106847772A (en) * 2016-12-20 2017-06-13 中国电子科技集团公司第五十八研究所 For the flux-free flip chip method of ceramic package
CN108214260A (en) * 2016-12-22 2018-06-29 蓝思科技(长沙)有限公司 A kind of polishing process of ultra-thin sapphire wafer
CN106625204A (en) * 2017-01-06 2017-05-10 东莞市天域半导体科技有限公司 Back surface processing method for large-size SiC wafer
CN108831869A (en) * 2018-06-06 2018-11-16 江苏省宜兴电子器件总厂有限公司 A kind of method of common burning porcelain shell pad preparation

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
左敦稳: "《现代加工技术实验教程》", 31 August 2014 *
庞滔: "《超精密加工技术》", 31 August 2000 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112687570A (en) * 2020-12-28 2021-04-20 中国电子科技集团公司第十三研究所 Test method for testing welding performance of welding pad of ceramic shell
CN112687570B (en) * 2020-12-28 2023-02-28 中国电子科技集团公司第十三研究所 Test method for testing welding performance of welding pad of ceramic shell

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