CN108161711A - Grinding wafer device and grinding head - Google Patents
Grinding wafer device and grinding head Download PDFInfo
- Publication number
- CN108161711A CN108161711A CN201711460068.8A CN201711460068A CN108161711A CN 108161711 A CN108161711 A CN 108161711A CN 201711460068 A CN201711460068 A CN 201711460068A CN 108161711 A CN108161711 A CN 108161711A
- Authority
- CN
- China
- Prior art keywords
- grinding
- finishing
- retaining ring
- grinding pad
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
A kind of grinding wafer device and its grinding head, the grinding head include abrasive disk and retaining ring, and the retaining ring is fixedly installed on the bottom surface of the abrasive disk, further includes：Grinding pad modifies contact, and the grinding pad finishing contact is set to the abrasive disk or the retaining ring, and outside the retaining ring area defined；The grinding pad finishing contact has the finishing face for being suitable for finishing grinding pad, and the finishing face is less than the bottom surface of the retaining ring or is flushed with retaining ring bottom surface.So that grinding head towards grinding pad move when, finishing face can be contacted with grinding pad, grinding pad is modified, grinding head has both the function being ground to wafer and the function of being modified to grinding pad, be not in the situation that the movement locus of grinding head and grinding mat trimmer is interfered, collides and damaged in the prior art without separately setting grinding mat trimmer again in grinding device.
Description
Technical field
The present invention relates to semiconductor manufacturing facility technical fields, and in particular to a kind of grinding wafer device and grinding head.
Background technology
Grinding device for carrying out chemical mechanical grinding to wafer, which generally comprises grinding plate, grinding head and is set to, to be ground
Polish the grinding pad of platform.Grinding head fixes the back side of absorption wafer, and the front of wafer is pressed on grinding pad, passes through grinding head
Relative motion with grinding plate is ground wafer.
In process of lapping, the clast of wafer, the clast of retaining ring can be deposited in the surface of grinding pad, lose grinding pad
The ability of grinding；Meanwhile the clast on grinding pad can also scratch the surface of wafer.
Therefore, the grinding device of the prior art further includes grinding mat trimmer, and grinding mat trimmer is opposite with grinding pad to be set
It puts, is modified suitable for the surface to grinding pad, and to remove the clast on grinding pad, the surface of grinding pad is enable to return again
To ideal state.
But grinding head and grinding mat trimmer are oppositely arranged with grinding plate, in process of lapping, grinding head and are ground
Mill dresser movement locus be likely to occur interference, collision and damage.
Invention content
It is grinding head and grinding mat trimmer grinding head in prior art grinding device and grind that the present invention, which solves the problems, such as,
Mill dresser movement locus be likely to occur interference, collision and damage.
To solve the above problems, the present invention provides a kind of grinding head of grinding wafer device, including abrasive disk and retaining ring,
The retaining ring is fixedly installed on the bottom surface of the abrasive disk, further includes：Grinding pad modifies contact, and the grinding pad modifies contact
The abrasive disk or the retaining ring are set to, and outside the retaining ring area defined；The grinding pad finishing is touched
Head have be suitable for finishing grinding pad finishing face, the finishing face less than the retaining ring bottom surface or with the retaining ring
Bottom surface flushes.
Optionally, the grinding head further includes the actuator for being fixedly installed on the abrasive disk or retaining ring, the driving
Part connects the grinding pad finishing contact, is transported suitable for the grinding pad is driven to modify contact along the axial direction of the abrasive disk
It is dynamic, make bottom surface of the finishing face less than the retaining ring or flushed with the bottom surface of the retaining ring.
Optionally, the actuator is pressure chamber, and axial one end of the grinding pad finishing contact is set to the pressure
Intracavitary.
Optionally, the pressure chamber is hydraulic cavities or atmospheric pressure cavity.
Optionally, grinding pad finishing contact is set to the peripheral surface of the abrasive disk or bottom surface or is set to described
The peripheral surface of retaining ring or bottom surface.
Optionally, the grinding pad finishing contact is circular in configuration, is sheathed on the periphery of the abrasive disk.
Optionally, the finishing face is circular in configuration, and width of the finishing face along the abrasive disk in the radial direction
Size Control is between 3.0cm-5.0cm.
Optionally, the grinding pad finishing contact is multiple, and the circumferential direction around the abrasive disk is uniformly distributed.
Optionally, the finishing face is coated with diamond coatings.
In order to solve the above technical problems, the technical program also provides a kind of grinding wafer device, including：Grinding plate and solid
Surely the grinding pad of the grinding plate is set to, further includes above-described grinding head, the grinding head and the grinding pad face
It is provided opposite to.
Compared with prior art, technical scheme of the present invention has the following advantages：
The grinding head of the grinding wafer device, including abrasive disk and retaining ring, by being set in abrasive disk or retaining ring
Grinding pad finishing contact is put, and makes the finishing face of grinding pad finishing contact less than retaining ring bottom surface or is flushed with retaining ring bottom surface.
So that grinding head towards grinding pad move when, finishing face can be contacted with grinding pad, and grinding pad is modified, and grinding head has both
The function of be ground to wafer and the function of being modified to grinding pad, without separately setting grinding pad is repaiied again in grinding device
Whole device is not in the feelings that the movement locus of grinding head and grinding mat trimmer is interfered, collides and damaged in the prior art
Shape.Simultaneously, additionally it is possible to be further simplified grinding device, reduce manufacturing cost.
Further, the grinding head further includes actuator, and actuator can drive grinding pad to modify contact along abrasive disk
Axial direction movement.Thus can be by the way that grinding pad be controlled to modify the position of contact, control repaiies entire height, makes finishing face
Height be higher than, the bottom surface less than or equal to retaining ring.And then it can realize the function being only ground to wafer or only to grinding
The mill pad function of being modified or the function of being ground to wafer, modified to grinding pad simultaneously.
Description of the drawings
Fig. 1 is the structure diagram of specific embodiment of the invention grinding wafer device；
Fig. 2 is the three-dimensional structure diagram of the grinding head of grinding wafer device shown in Fig. 1；
Fig. 3 is the sectional view of grinding head shown in Fig. 2；
Fig. 4 is grinding head shown in Fig. 2 along the structure diagram on A directions.
Specific embodiment
It is understandable for the above objects, features and advantages of the present invention is enable to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
With reference to Fig. 1, a kind of grinding wafer device 200 including grinding plate 210, grinding pad 220, grinding liquid pipe 230 and is ground
Bistrique 100.Wherein, grinding plate 210 has first rotating shaft 211, and the first rotating shaft 21, which can surround, itself to be rotated to drive
The grinding plate 210 rotates；The grinding pad 220 is fixedly installed on the upper surface of the grinding plate 210, the grinding head
100 and grinding pad 220 in axial direction x is oppositely arranged, and the grinding pad 220 towards the surface of grinding head 100 be coarse table
Face, suitable for contacting with wafer 300 and being ground to it；The grinding liquid pipe 230 is suitable in process of lapping, by lapping liquid
It is sprayed to the grinding pad 220.
Referring to figs. 1 to Fig. 3, the grinding head 100 include the second shaft 10, abrasive disk 20 and retaining ring 30, described second
Shaft 10 is fixedly connected with the abrasive disk 20, and can surround and itself rotate that the abrasive disk 20 is driven to rotate；The grinding
Disk 20 has towards the bottom surface of grinding pad 220, and the retaining ring 30 is fixedly installed on the bottom surface of the abrasive disk 20, and with
The bottom surface of abrasive disk 20 surrounds wafer accommodation space 10a.
During grinding wafer, the wafer 300 is arranged in wafer accommodation space 10a, the bottom surface 30a of retaining ring 30
It is in contact with grinding pad 220, to prevent wafer 300 from sliding out to the external world.The wafer 300 is pressed to grinding pad by grinding head 100
220, grinding pad 220 is in contact with wafer 300.
Meanwhile lapping liquid is flowed out from grinding liquid pipe 230, lapping liquid carries out chemical attack to the surface of wafer 300, in crystalline substance
During circle 300 and 220 relative rotation of grinding pad, the clast through chemical attack is detached from the surface of wafer 300, realizes grinding.
In the present embodiment, the grinding head 100 further includes grinding pad finishing contact 40, and the grinding pad modifies contact 40
In outside 30 area defined of retaining ring, and with the finishing face 40a towards grinding pad 220.Wherein, the grinding pad is repaiied
In axial direction x is mobilizable is set to the abrasive disk 20 for whole contact 40, so that the height of finishing face 40a is less than the holding
The height of ring bottom surface 30a or height higher than the retaining ring bottom surface 30a are flushed with retaining ring bottom surface 30a holdings.
" being less than ", " being higher than ", " flushing " described in the present embodiment, during referring both to wafer actual grinding, grinding wafer device
200 short transverse is as benchmark.
Therefore, when grinding pad finishing contact 40 activity is to when making the finishing face 40a be higher than the retaining ring bottom surface 30a,
During grinding head 100 is moved towards grinding pad 220, retaining ring bottom surface 30a takes the lead in contacting grinding pad 220, and finishing face 40a is not
It is in contact with grinding pad 220, grinding head 100 at this time is suitable for being ground the wafer 300 being arranged in retaining ring 30.
When grinding pad finishing contact 40 activity is to when making the finishing face 40a be flushed with the retaining ring bottom surface 30a, grind
During first 100 move towards grinding pad 220, retaining ring bottom surface 30a contacts grinding pad 220 simultaneously with finishing face 40a, at this time
Grinding head 100 be suitable for the wafer 300 being arranged in retaining ring 30 is ground；Meanwhile the finishing face 40a also is able to pair
Grinding pad 220 is modified, and removes the clast on grinding pad 220, grinding pad 220 is made to keep larger roughness.
When grinding pad finishing contact 40 activity is to when making the finishing face 40a be less than the retaining ring bottom surface 30a, grinding head
During 100 move towards grinding pad 220, finishing face 40a takes the lead in contact grinding pad 220, and grinding head 100 at this time is suitable for pair
Grinding pad 220 is modified, and removes the clast on grinding pad 220, grinding pad 220 is made to keep larger roughness.
That is, the grinding head 100 of the technical program has both the function that is ground to wafer 300 and to grinding
The function that pad 220 is modified.At this point, without separately setting grinding mat trimmer again in grinding device 200, from without
The situation that the movement locus of grinding head and grinding mat trimmer is interfered, collides and damaged in the prior art；Simultaneously, additionally it is possible to
Be further simplified grinding device 200, reduce the inner space of grinding device 200, reduce the manufacturing of grinding device 200 into
This.
It should be noted that the grinding pad in the present embodiment is modified, contact 40 is mobilizable to be set to the abrasive disk 20,
And it is arranged on the peripheral surface of abrasive disk 20.In other variations, the grinding pad finishing contact 40 can also be movably arranged on
The bottom surface of abrasive disk 20 is movably arranged on the peripheral surface of the retaining ring 30 or is movably arranged on the bottom of the retaining ring 30
Face 30a.As long as being not arranged in wafer accommodating chamber 10a, the placement of wafer 300 is not interfered.
In addition, the grinding pad finishing contact 40 can also be fixedly installed on the abrasive disk 20.At this point, make the grinding
The height of the finishing face 40a of pad finishing contact is flushed with the height of the retaining ring bottom surface 30a or slightly below described retaining ring bottom
The height of face 30a.
If being equipped with wafer 300 in the wafer accommodating chamber 10a, can be utilized while being ground to wafer 300
Grinding pad finishing contact 40 modifies grinding pad 220；It is only sharp if being not provided with wafer 300 in the wafer accommodating chamber 10a
Grinding pad 220 is modified with grinding pad finishing contact 40.
Wherein, the grinding pad finishing contact 40 can be fixed at the peripheral surface of the abrasive disk 20 or fixation is set
It puts in the bottom surface of the abrasive disk 20 or is fixed at the peripheral surface of the retaining ring 30 or be fixed at the holding
The bottom surface 30a of ring 30.As long as being not arranged in wafer accommodating chamber 10a, the placement of wafer 300 is not interfered.
With reference to Fig. 1, Fig. 3, the grinding head 100 has the first atmospheric pressure cavity 51, and first atmospheric pressure cavity 51 is fixed at
The upper surface of abrasive disk 20, the abrasive disk 20 have the stomata of the first atmospheric pressure cavity 51 of connection and wafer accommodating chamber 10a (in figure not
It shows).First atmospheric pressure cavity 51 connects snorkel (not shown) to change the air pressure in the first atmospheric pressure cavity 51.
The thickness of wafer 300 is very thin, usually in the micron-scale not.And the height of retaining ring 30 is relatively large so that described
Wafer 300 can move up and down in the wafer accommodating chamber 10a.Before the grinding of wafer 300, need to utilize the grinding head
The 100 clamping wafers 300.
Specifically, by being evacuated to first atmospheric pressure cavity 51, so that wafer 300 is adsorbed by fixed in abrasive disk 20
Lower surface；At this point, the grinding head 100 is moved downwardly to when making retaining ring bottom surface 30a contact grinding pads 220, the wafer
Also there is gap between 300 and grinding pad 220.
When being ground to wafer 300, by being inflated to first atmospheric pressure cavity 51.At this point, wafer 300 is pressed
It to grinding pad 220, contacts with grinding pad 220, by the relative motion of grinding pad 220 and wafer 300, realizes to wafer 300
Grinding.
With continued reference to Fig. 1, Fig. 3, in the present embodiment, the grinding head 100 further includes actuator, and the actuator fixation is set
The abrasive disk 20 is placed in, in axial direction x is moved suitable for driving the grinding pad finishing contact 40, to change the finishing face
The height of 40a.
Specifically, the actuator is the second atmospheric pressure cavity 52, axial one end of the grinding pad finishing contact 40 is arranged on
In second atmospheric pressure cavity 52.Second atmospheric pressure cavity 52 connects snorkel (not shown) to change in the second atmospheric pressure cavity 52
Air pressure.
When being evacuated by snorkel to second atmospheric pressure cavity 52, the grinding pad finishing contact 40 is square in an axial direction
It is moved upwards to x, can making finishing face 40a, grinding head 100 at this time is suitable for carrying out wafer 300 higher than retaining ring bottom surface 30a
Grinding.
When being inflated by snorkel to second atmospheric pressure cavity 52, the grinding pad finishing contact 40 is square in an axial direction
It is moved downward to x, can making finishing face 40a, grinding head 100 at this time is suitable for repairing using grinding pad less than retaining ring bottom surface 30a
Whole contact 40 repairs grinding pad 220.
When the air pressure of second atmospheric pressure cavity 52 causes finishing face 40a to have the height being close with retaining ring bottom surface 30a
When, grinding head 100 at this time is suitable for being ground wafer 300；Simultaneously, additionally it is possible to modify contact 40 to grinding using grinding pad
Pad 220 is repaired.
In the present embodiment, the control of wafer 300 and grinding pad finishing contact 40 is controlled using atmospheric pressure cavity so that
Control mode is more single, so as to make the control structure of grinding head 100 relatively simple.Also, the grinding head 100 can
It is improved on the basis of prior art grinding head, larger change is made without the grinding head to the prior art, so as to drop
Low cost.
In other variations, the actuator can also use the pressure chamber of other forms, such as hydraulic cavities or gas-liquid
Mixed type pressure chamber etc., to drive grinding pad finishing contact 40, in axial direction x is moved.Further, it is also possible to using knots such as motors
In axial direction x is moved structure driving grinding pad finishing contact 40, does not influence the implementation of the technical program.
Referring to Figure 2 to Figure 4, the grinding pad finishing contact 40 is circular in configuration, is sheathed on the periphery of the abrasive disk 20.
In the process of running, the grinding head 100 rotates grinding wafer device around the second shaft 10, and the second generally fixation of shaft 10 is set
It puts in the center of abrasive disk 20.By the way that grinding pad finishing contact 40 is arranged to cyclic structure so that grinding head 100 is same
Mass Distribution on one circumference is more uniform, can prevent grinding head 100 from eccentric shaking occurring in rotary course.
Further, grinding pad finishing contact 40 radially on width L controls 2.0cm-5.0cm it
Between, that is, the width L of the finishing face 40a is between 2.0cm-5.0cm.Optionally, the width L for making the finishing face 40a is
4.0cm.The width L of the finishing face 40a is bigger, then the contact area between grinding pad is bigger, so as to improve to grinding
Grind the dressing efficiency of pad.But the width L of finishing face 40a is bigger, while grinding pad finishing contact 40 is also made to have larger matter
Amount is unfavorable for the arrangement of the grinding pad finishing contact 40.
In other variations, can also multiple grinding pad finishing contacts be set in the periphery wall of the abrasive disk 20, make
Multiple grinding pad finishing contacts are uniformly distributed circumferentially.At this point, grinding head 100 also more can be effectively prevented in rotary course
It is middle that eccentric shake occurs.
Furthermore it is also possible to only in the wherein side of abrasive disk 20, setting grinding pad modifies contact, it also can be to grinding pad 220
Play the role of finishing.
It is described to grind when grinding pad finishing contact is arranged on the bottom surface of abrasive disk 20 or is arranged in retaining ring 30
The arrangement of mill pad finishing contact is referred to more than form, repeats no more.
In the present embodiment, the grinding pad finishing contact 40 uses nickel material.Grinding wafer device 200 is in operational process
In, grinding pad finishing contact 40 is inevitably contacted with lapping liquid, and lapping liquid is usually acidic liquid or akaline liquid, meeting
Common metal material is caused to corrode.And nickel has preferable corrosion resistance, so as to prevent grinding pad finishing contact 40 rotten
Erosion makes grinding pad finishing contact 40 have longer service life.
Wherein, the finishing face 40a is coated with diamond coatings.Diamond coatings have larger hardness, so as to
Effectively the grinding pad 220 is modified, removes the wafer clast and retaining ring of the surface for being deposited in grinding pad 220 and glazing
Clast.
With reference to Fig. 1, the present embodiment also provides a kind of grinding wafer device 200, including grinding plate 210, grinding liquid pipe 230
With the grinding pad 220 for being fixedly installed on grinding plate 210.Grinding wafer device 200 further includes above-described grinding head 100,
Grinding head 100 is set face-to-face with grinding pad 220.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of grinding head of grinding wafer device, including abrasive disk and retaining ring, the retaining ring is fixedly installed on described grind
The bottom surface of mill, which is characterized in that further include：
Grinding pad modifies contact, and the grinding pad finishing contact is set to the abrasive disk or the retaining ring, and positioned at described
Outside retaining ring area defined；
The grinding pad finishing contact has the finishing face for being suitable for finishing grinding pad, and the finishing face is less than the bottom of the retaining ring
Face is flushed with the bottom surface of the retaining ring.
2. grinding head as described in claim 1, which is characterized in that further include and be fixedly installed on the abrasive disk or retaining ring
Actuator, the actuator connect the grinding pad finishing contact, suitable for the grinding pad is driven to modify contact along the grinding
The axial direction movement of disk makes bottom surface of the finishing face less than the retaining ring or is flushed with the bottom surface of the retaining ring.
3. grinding head as claimed in claim 2, which is characterized in that the actuator is pressure chamber, and the grinding pad finishing is touched
Axial one end of head is set in the pressure chamber.
4. grinding head as claimed in claim 3, which is characterized in that the pressure chamber is hydraulic cavities or atmospheric pressure cavity.
5. such as claim 1-4 any one of them grinding heads, which is characterized in that the grinding pad finishing contact is set to institute
State the peripheral surface of abrasive disk or bottom surface or the peripheral surface or the bottom surface that are set to the retaining ring.
6. such as claim 1-4 any one of them grinding heads, which is characterized in that the grinding pad modifies contact shape in a ring
Shape is sheathed on the periphery of the abrasive disk.
7. grinding head as claimed in claim 6, which is characterized in that the finishing face is circular in configuration, and the finishing face edge
The width dimensions of the abrasive disk in the radial direction are controlled between 3.0cm-5.0cm.
8. such as claim 1-4 any one of them grinding heads, which is characterized in that the grinding pad finishing contact is multiple, ring
Circumferential direction around the abrasive disk is uniformly distributed.
9. such as claim 1-4 any one of them grinding heads, which is characterized in that the finishing face is coated with diamond coatings.
10. a kind of grinding wafer device, including：Grinding plate and the grinding pad for being fixedly installed on the grinding plate, feature
It is, further include claim 1-9 any one of them grinding heads, the grinding head is set face-to-face with the grinding pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711460068.8A CN108161711A (en) | 2017-12-28 | 2017-12-28 | Grinding wafer device and grinding head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711460068.8A CN108161711A (en) | 2017-12-28 | 2017-12-28 | Grinding wafer device and grinding head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108161711A true CN108161711A (en) | 2018-06-15 |
Family
ID=62519072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711460068.8A Pending CN108161711A (en) | 2017-12-28 | 2017-12-28 | Grinding wafer device and grinding head |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108161711A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110394706A (en) * | 2019-07-25 | 2019-11-01 | 西安奕斯伟硅片技术有限公司 | A kind of silicon wafer processing unit and method |
| CN110576387A (en) * | 2019-09-30 | 2019-12-17 | 靖江先锋半导体科技有限公司 | surface grinding device for plasma CVD wafer heater |
| CN111230662A (en) * | 2020-03-13 | 2020-06-05 | 浙江上风高科专风实业有限公司 | Noise reduction type sweep-bending combined axial flow blade production and processing equipment |
| CN111531464A (en) * | 2020-05-08 | 2020-08-14 | 西安奕斯伟硅片技术有限公司 | Grinding head and grinding equipment |
| CN114905406A (en) * | 2022-04-21 | 2022-08-16 | 中国人民解放军国防科技大学 | Inverted packaged chip substrate thinning system and method |
| WO2023024190A1 (en) * | 2021-08-23 | 2023-03-02 | 武汉华星光电半导体显示技术有限公司 | Grinding disk and substrate cleaning device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5931725A (en) * | 1996-07-30 | 1999-08-03 | Tokyo Seimitsu Co., Ltd. | Wafer polishing machine |
| US6004196A (en) * | 1998-02-27 | 1999-12-21 | Micron Technology, Inc. | Polishing pad refurbisher for in situ, real-time conditioning and cleaning of a polishing pad used in chemical-mechanical polishing of microelectronic substrates |
| WO2001078124A1 (en) * | 2000-04-12 | 2001-10-18 | Semicontech Corporation | Conditioner and conditioning process for polishing pad of chemical mechanical polishing apparatus |
| US20010039171A1 (en) * | 1998-07-28 | 2001-11-08 | Aiyer Arun A. | In-situ pad conditoning apparatus for CMP polisher |
| US20030070756A1 (en) * | 2001-10-11 | 2003-04-17 | Yung-Tai Hung | Wafer carrier used for chemical mechanic polishing |
-
2017
- 2017-12-28 CN CN201711460068.8A patent/CN108161711A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5931725A (en) * | 1996-07-30 | 1999-08-03 | Tokyo Seimitsu Co., Ltd. | Wafer polishing machine |
| US6004196A (en) * | 1998-02-27 | 1999-12-21 | Micron Technology, Inc. | Polishing pad refurbisher for in situ, real-time conditioning and cleaning of a polishing pad used in chemical-mechanical polishing of microelectronic substrates |
| US20010039171A1 (en) * | 1998-07-28 | 2001-11-08 | Aiyer Arun A. | In-situ pad conditoning apparatus for CMP polisher |
| WO2001078124A1 (en) * | 2000-04-12 | 2001-10-18 | Semicontech Corporation | Conditioner and conditioning process for polishing pad of chemical mechanical polishing apparatus |
| US20030070756A1 (en) * | 2001-10-11 | 2003-04-17 | Yung-Tai Hung | Wafer carrier used for chemical mechanic polishing |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110394706A (en) * | 2019-07-25 | 2019-11-01 | 西安奕斯伟硅片技术有限公司 | A kind of silicon wafer processing unit and method |
| CN110576387A (en) * | 2019-09-30 | 2019-12-17 | 靖江先锋半导体科技有限公司 | surface grinding device for plasma CVD wafer heater |
| CN110576387B (en) * | 2019-09-30 | 2024-03-12 | 江苏先锋精密科技股份有限公司 | Surface grinding device for plasma CVD wafer heater |
| CN111230662A (en) * | 2020-03-13 | 2020-06-05 | 浙江上风高科专风实业有限公司 | Noise reduction type sweep-bending combined axial flow blade production and processing equipment |
| CN111230662B (en) * | 2020-03-13 | 2021-01-26 | 浙江上风高科专风实业有限公司 | Noise reduction type sweep-bending combined axial flow blade production and processing equipment |
| CN111531464A (en) * | 2020-05-08 | 2020-08-14 | 西安奕斯伟硅片技术有限公司 | Grinding head and grinding equipment |
| CN111531464B (en) * | 2020-05-08 | 2022-04-08 | 西安奕斯伟材料科技有限公司 | Grinding head and grinding equipment |
| WO2023024190A1 (en) * | 2021-08-23 | 2023-03-02 | 武汉华星光电半导体显示技术有限公司 | Grinding disk and substrate cleaning device |
| CN114905406A (en) * | 2022-04-21 | 2022-08-16 | 中国人民解放军国防科技大学 | Inverted packaged chip substrate thinning system and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108161711A (en) | Grinding wafer device and grinding head | |
| CN201214208Y (en) | Polishing pad regulating apparatus | |
| KR100721196B1 (en) | Polishing pad and using chemical mechanical polishing apparatus | |
| EP2202031B1 (en) | High-rate polishing method | |
| US9375825B2 (en) | Polishing pad conditioning system including suction | |
| JPH0839423A (en) | Chemical polishing machinery having improved slurry distribution | |
| TWI597129B (en) | Damper for polishing pad conditioner | |
| US20050170761A1 (en) | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces | |
| JP2008044100A (en) | Polishing pad and chemical mechanical polishing device including the same | |
| US20110065365A1 (en) | Grinding method and grinding apparatus for polishing pad for use in double-side polishing device | |
| KR20100115819A (en) | Polishing apparatus, polishing auxiliary apparatus and polishing method | |
| JP6372859B2 (en) | Polishing pad conditioning method and polishing apparatus | |
| WO2011040296A1 (en) | Method for grinding green ball, method for manufacturing ceramic ball, and grinding device | |
| JP2009111038A (en) | Cleaning device of chuck table | |
| KR101249856B1 (en) | An appararus of polishing an edge of a wafer | |
| CN210209950U (en) | Chemical mechanical polishing equipment | |
| CN205968604U (en) | Precision grinding dish | |
| KR101125740B1 (en) | Apparatus for polishing wafer | |
| JP5478945B2 (en) | Polishing pad conditioner | |
| CN209998980U (en) | Flatness repairing device of ceramic disc for silicon carbide wafer | |
| JP2011073076A (en) | Polishing device of green ball | |
| US11654527B2 (en) | Polishing head for use in chemical mechanical polishing and CMP apparatus having the same | |
| JP5085273B2 (en) | Chuck table cleaning device | |
| JP3317910B2 (en) | Grinding equipment in grinder | |
| CN219685059U (en) | Grinding device and grinding system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180615 |
|
| RJ01 | Rejection of invention patent application after publication |