CN111644977A - Polishing retainer ring and polishing head - Google Patents
Polishing retainer ring and polishing head Download PDFInfo
- Publication number
- CN111644977A CN111644977A CN202010695884.2A CN202010695884A CN111644977A CN 111644977 A CN111644977 A CN 111644977A CN 202010695884 A CN202010695884 A CN 202010695884A CN 111644977 A CN111644977 A CN 111644977A
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- China
- Prior art keywords
- polishing
- transition region
- ring
- polishing pad
- transition
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
- B24B41/047—Grinding heads for working on plane surfaces
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention provides a polishing retainer ring, including: an annular body; the annular body has a first transition region between at least a lower surface and an inner surface, an inside height of the first transition region being higher than an outside height of the first transition region, the first transition region smoothly transitioning from the surface to the lower surface. The polishing fixing ring provided by the invention can avoid the excessive polishing of the edge of the wafer caused by the deformation of the polishing pad.
Description
Technical Field
The invention relates to the technical field of grinding, in particular to a fixing ring for grinding and a grinding head.
Background
Existing chemical mechanical polishing systems use a chuck assembly to perform Chemical Mechanical Polishing (CMP). The polishing head is located on the top and has an annular shape in a horizontal plane. The retaining ring surrounds the circumference of the polishing head. A circular semiconductor wafer is loaded into a holder by holding the wafer on a polishing head using a vacuum, wherein the wafer is located in a retaining ring. The clamping system is then closed by contacting the exposed surface of the wafer with a polishing pad on a platen (tension). Then, the wafer is moved relative to the polishing pad, thereby performing polishing.
Because the polishing pad has certain flexibility, when the fixed ring applies pressure to the polishing pad, the polishing pad deforms and bulges on two sides of the fixed ring, and the bulged part can cause over-grinding to the edge of the wafer and influence the grinding result of the wafer.
Disclosure of Invention
The polishing fixing ring and the polishing head provided by the invention can avoid the excessive polishing of the wafer edge caused by the deformation of the polishing pad.
In a first aspect, the present invention provides a polishing retainer ring, comprising: an annular body;
the annular body has a first transition region between at least a lower surface and an inner surface, the first transition region having an inner height greater than an outer height of the first transition region, the first transition region smoothly transitioning from the inner surface to the lower surface.
Optionally, the annular body further has a second transition region between the lower surface and the outer surface, an outer height of the second transition region being higher than an inner height of the second transition region, the second transition region smoothly transitioning from the outer surface to the inner surface.
Optionally, the first transition area is a rounded corner that meets the lower surface and the inner surface, and the second transition area is a rounded corner that meets the lower surface and the outer surface.
Optionally, the ratio of the fillet radius of the first transition area to the width of the bottom surface is 1:99 to 99: 1; alternatively, the first and second electrodes may be,
the ratio of the sum of the fillet radii of the first transition area and the second transition area to the width of the bottom surface is 1: 99-99: 1.
Optionally, the difference between the inner diameter and the outer diameter of the annular body is 1cm to 10 cm.
Optionally, the annular body is made of a composite material arranged in a stack, wherein the first transition region is arranged on a layer of material in contact with the polishing pad.
Optionally, the composite material is a composite of polyetheretherketone and stainless steel; alternatively, the first and second electrodes may be,
the composite material is a composite material of polyphenylene sulfide and stainless steel.
The invention provides a polishing fixing ring, wherein a first transition area is formed between the inner surface and the lower surface of an annular main body, and the inner height of the first transition area is higher than the outer height; when fixed ring applyed pressure to the polishing pad, the lower surface contact polishing pad of solid fixed ring, the polishing pad because receive pressure to take place deformation to the part of polishing pad in solid fixed ring lower surface both sides takes place the uplift, this moment, because solid fixed ring has first transition region, and the inboard in first transition region is higher than the outside, and the part of this uplift will hold in first transition region below, thereby can not influence the grinding at wafer edge.
In a second aspect, the present invention provides a polishing head comprising:
a load bearing structure;
the vertical driving mechanism is arranged on the lower surface of the bearing structure and is connected with the bearing structure; and the number of the first and second groups,
the polishing retainer ring according to any one of the above aspects; the grinding fixing ring surrounds the vertical driving mechanism and is connected with the bearing structure.
Optionally, the vertical driving mechanism is configured to drive the wafer to move in a vertical direction, so that the lower surface of the to-be-ground member and the lower surface of the fixing ring form a step.
Optionally, the first transition region of the polishing retaining ring is spaced from the edge of the member to be polished.
The polishing head provided by the invention is provided with the polishing fixing ring, a first transition area is formed between the inner surface and the lower surface of the annular main body, and the inner height of the first transition area is higher than the outer height; when fixed ring applyed pressure to the polishing pad, the lower surface contact polishing pad of solid fixed ring, the polishing pad because receive pressure to take place deformation to the part of polishing pad in solid fixed ring lower surface both sides takes place the uplift, this moment, because solid fixed ring has first transition region, and the inboard in first transition region is higher than the outside, and the part of this uplift will hold in first transition region below, thereby can not influence the grinding at wafer edge.
Drawings
FIG. 1 is a schematic cross-sectional view of a retaining ring for polishing according to an embodiment of the present invention;
FIG. 2 is a schematic view of a prior art retaining ring deforming while applying pressure to a polishing pad;
FIG. 3 is a diagram illustrating deformation of a polishing pad when pressure is applied to the polishing pad by a polishing fixture according to an embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
An embodiment of the present invention provides a polishing retaining ring 1, as shown in fig. 1, including: an annular body; the annular body has at least between the lower surface 11 and the inner surface 13 a first transition area 12, the first transition area 12 having an inner height which is higher than an outer height of the first transition area 12, the first transition area 12 smoothly transitioning from the inner surface to the lower surface 11. In this embodiment, "inner" refers to a direction pointing to the inside of the ring-shaped body, and "outer" refers to a direction pointing to the outside of the ring-shaped body, for example, when pointing from the inside of the ring-shaped body to the outside of the ring-shaped body when pointing from the first position to the second position, then the second position is outside, and the first position is inside; when the first position points to the second position, the outer side of the annular main body points to the inner side of the annular main body, the second position is at the inner side, and the first position is at the outer side.
As shown in fig. 2, the polishing head of the prior art has a fixing ring 1, after the wafer 3 is grabbed, the wafer 3 is located inside the polishing ring, and during the polishing process, the fixing ring 1 presses on the surface 2 of the polishing pad. Since the polishing pad has a certain flexibility, when the fixing ring 1 applies pressure to the polishing pad surface 2, the polishing pad surface 2 is deformed, and the polishing pad surface 2 is raised at portions adjacent to the inner side and the outer side of the fixing ring 1. Since the wafer 3 is located inside the retaining ring 1 and is closely attached to the polishing pad for polishing, the raised portion happens to be located at the edge of the wafer 3, and the edge of the wafer 3 is excessively polished during the polishing process, resulting in an unsatisfactory polishing effect of the wafer 3.
As shown in fig. 3, in the present embodiment, the fixing ring 1 has a first transition zone 12 between the lower surface 11 and the inner surface 13 of the ring body; the height of the inner side of the first transition area 12 is higher than the height of the outer side, when the bottom surface of the fixing ring 1 applies pressure to the polishing pad, the polishing pad bulges at the inner side and the outer side which are adjacent to the bottom surface of the fixing ring 1, the area where the bulges happen at the inner side of the bottom surface of the fixing ring 1 is just located at the position corresponding to the first transition area 12, at the moment, the inner side of the first transition area 12 is higher than the height of the outer side, so that a space for accommodating the bulges is formed, therefore, the bulges do not exist at the edge of the wafer 3, the lower surface of the whole wafer 3 is in surface contact with the flat polishing pad, and the edge of the wafer 3 can.
As an alternative embodiment, continuing with fig. 1, the annular body further has a second transition region 14 between the lower surface 11 and the outer surface 15, the second transition region 14 having an outer height that is higher than an inner height of the second transition region 14, the second transition region 14 smoothly transitioning from the outer surface 15 to the inner surface 13. In the present embodiment, since the second transition region 14 is provided between the outer surface 15 and the lower surface 11 of the ring-shaped body, the lower surface 11 of the ring-shaped body is further reduced in contact area with the polishing pad surface, and when the lower surface 11 of the ring-shaped body applies pressure to the polishing pad surface, the deformation of the polishing pad surface is further reduced, so that the influence of the deformation of the polishing pad surface on the grinding of the wafer 3 can be further reduced.
As an alternative embodiment, the first transition area 12 is rounded in correspondence with the lower surface 11 and the inner surface 13, and the second transition area 14 is rounded in correspondence with the lower surface 11 and the outer surface 15. In the present embodiment, rounded corners are used as the first transition area 12 and the second transition area 14, and since the rounded corners are common in the conventional processing, the processing is simple and convenient. However, the scope of embodiments of the present patent should not be construed as limited to rounded corners, and one skilled in the art will appreciate that the first and second transition regions 12, 14 may also be in the form of transition regions having a cross-section that is partially elliptical, partially parabolic, or partially hyperbolic, or other forms, or may also be transition regions formed by a combination of shapes. Also, the first transition area 12 and the second transition area 14 in the present embodiment are the same type of shape, but this form should not limit the scope of the present embodiment, and those skilled in the art will appreciate that the first transition area 12 and the second transition area 14 may be different types of shapes.
In an alternative embodiment, the ratio of the fillet radius of the first transition area to the width of the bottom surface is 1:99 to 99: 1; or the ratio of the sum of the fillet radii of the first transition area and the second transition area to the width of the bottom surface is 1: 99-99: 1. When the polishing retaining ring has both the first transition region 12 and the second transition region 14, the ratio of the sum of the fillet radii of the first transition region 12 and the second transition region 14 to the width of the bottom surface, which is the ratio of the width of the bottom surface to the width of the entire cross section of the ring-shaped body, may be selected according to the size of the wafer 3, the height of the ring-shaped body, and other polishing conditions, for example, 1:99, 1:50, 1:1, 50:1, or 99: 1. When the polishing retainer ring has only the first transition region 12, the fillet radius of the first transition region 12 may be selected in the above-mentioned ratio.
As an alternative embodiment, the difference between the inner diameter and the outer diameter of the annular body is between 1cm and 10 cm. The difference between the inner and outer diameters of the ring body may be selected depending on the size of the wafer 3, the height of the ring body and other polishing conditions, and suitable dimensions may be selected for different conditions, for example 1cm, 2cm, 5cm, 8cm or 10 cm.
In an alternative embodiment, the annular body is made of a composite material arranged in layers, wherein the first transition region 12 is arranged on a layer of material in contact with the polishing pad. Because different areas of the grinding fixing ring correspond to different performance requirements, the annular main body is prepared from the material, and the optimal corresponding material can be selected in the corresponding area, so that the service life of the grinding fixing ring can be prolonged.
As an alternative embodiment, the composite material is a composite of polyetheretherketone and stainless steel; or the composite material is a composite material of polyphenylene sulfide and stainless steel. In this embodiment, whichever composite material is used, it is preferable to bring a flexible material into contact with the polishing pad so as to avoid damage to the polishing pad by a rigid material.
The polishing retainer ring 1 according to the present embodiment is configured such that a first transition region 12 is formed between an inner surface 13 and a lower surface 11 of a ring body, and an inner height of the first transition region 12 is higher than an outer height; when the fixing ring 1 applies pressure to the polishing pad, the lower surface 11 of the fixing ring 1 contacts the polishing pad, and the polishing pad deforms due to the pressure, so that the portions of the polishing pad on the two sides of the lower surface 11 of the fixing ring 1 are raised, at this time, because the fixing ring 1 is provided with the first transition region 12, the inner side of the first transition region 12 is higher than the outer side, the raised portions are accommodated below the first transition region 12, and the grinding of the edge of the wafer 3 is not affected.
An embodiment of the present invention further provides a polishing head, including:
a load bearing structure;
the vertical driving mechanism is arranged on the lower surface 11 of the bearing structure and is connected with the bearing structure; and the number of the first and second groups,
the above-described fixing ring 1 for polishing according to any one of the embodiments; the grinding fixing ring 1 is arranged around the vertical driving mechanism and is connected with the bearing structure.
In the present embodiment, the first transition region 12 is disposed between the inner surface 13 and the lower surface 11 of the fixing ring 1, and when the lower surface 11 of the fixing ring 1 applies pressure to the polishing pad surface 2, the first transition region 12 accommodates the bulge of the polishing pad surface 2 caused by the applied pressure, so as to avoid the bulge of the polishing pad surface 2 from affecting the polishing of the edge of the wafer 3.
As an alternative embodiment, the vertical driving mechanism is used to drive the wafer 3 to move in the vertical direction, so that the lower surface of the wafer 3 forms a step with the lower surface 11 of the fixing ring 1. Since a certain downward pressure needs to be applied to the polishing pad surface 2 when the wafer 3 is polished, the polishing head needs to have a vertical driving mechanism for driving the wafer 3 to apply an appropriate downward pressure to the polishing pad surface 2. Since the downward pressure applied to the polishing pad surface 2 by the wafer 3 is smaller than the downward pressure applied to the polishing pad surface 2 by the retaining ring 1, a step is formed between the lower surface 11 of the wafer 3 and the lower surface 11 of the retaining ring 1. At the same time, the step formed can also make the position of the wafer 3 correspond to the region outside the first transition region 12 of the fixing ring 1, ensuring that the wafer 3 can be fixed.
As an alternative embodiment, the first transition area 12 of the polishing retaining ring 1 is spaced apart from the edge of the wafer 3. Since the first transition area 12 of the retaining ring 1 is used to accommodate the bulge of the polishing pad surface 2 caused by deformation, the edge of the wafer 3 needs to be spaced apart from the first transition area, so as to ensure that the first transition area can accommodate the bulge of the polishing pad surface 2 without affecting the polishing of the edge of the wafer 3.
The polishing head provided by the present embodiment has the above-mentioned polishing fixing ring 1, and a first transition region 12 is formed between the inner surface 13 and the lower surface 11 of the ring body, and the inner height of the first transition region 12 is higher than the outer height; when the fixing ring 1 applies pressure to the polishing pad, the lower surface 11 of the fixing ring 1 contacts the polishing pad, and the polishing pad deforms due to the pressure, so that the portions of the polishing pad on the two sides of the lower surface 11 of the fixing ring 1 are raised, at this time, because the fixing ring 1 is provided with the first transition region 12, the inner side of the first transition region 12 is higher than the outer side, the raised portions are accommodated below the first transition region 12, and the grinding of the edge of the wafer 3 is not affected.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A polishing retainer ring, comprising: an annular body;
the annular body has a first transition region between at least a lower surface and an inner surface, the first transition region having an inner height greater than an outer height of the first transition region, the first transition region smoothly transitioning from the inner surface to the lower surface.
2. The polishing retaining ring of claim 1, wherein the annular body further includes a second transition region between the lower surface and the outer surface, the second transition region having an outer height that is greater than an inner height of the second transition region, the second transition region smoothly transitioning from the outer surface to the inner surface.
3. The polishing retaining ring of claim 2, wherein the first transition region is a fillet joining the lower surface and the inner surface, and the second transition region is a fillet joining the lower surface and the outer surface.
4. The polishing retaining ring of claim 3, wherein the ratio of the fillet radius of the first transition region to the width of the bottom surface is 1:99 to 99: 1; alternatively, the first and second electrodes may be,
the ratio of the sum of the fillet radii of the first transition area and the second transition area to the width of the bottom surface is 1: 99-99: 1.
5. The polishing retainer ring according to claim 1, wherein a difference between an inner diameter and an outer diameter of the ring body is 1cm to 10 cm.
6. The retaining ring of any of claims 2-4, wherein the ring body is formed from a composite material that is laminated, and wherein the first transition region is disposed on a layer of material that contacts the polishing pad.
7. The polishing retainer ring of claim 6, wherein the composite material is a composite of polyetheretherketone and stainless steel; alternatively, the first and second electrodes may be,
the composite material is a composite material of polyphenylene sulfide and stainless steel.
8. A polishing head, comprising:
a load bearing structure;
the vertical driving mechanism is arranged on the lower surface of the bearing structure and is connected with the bearing structure; and the number of the first and second groups,
the polishing retainer ring according to any one of claims 1 to 7; the grinding fixing ring surrounds the vertical driving mechanism and is connected with the bearing structure.
9. The polishing head of claim 8, wherein: the vertical driving mechanism is used for driving the to-be-ground piece to move in the vertical direction, so that the lower surface of the wafer and the lower surface of the fixing ring form a step.
10. The polishing head of claim 8, wherein: the first transition area of the grinding fixing ring and the edge of the to-be-ground piece are arranged at intervals.
Priority Applications (1)
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CN202010695884.2A CN111644977A (en) | 2020-07-17 | 2020-07-17 | Polishing retainer ring and polishing head |
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CN202010695884.2A CN111644977A (en) | 2020-07-17 | 2020-07-17 | Polishing retainer ring and polishing head |
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CN202010695884.2A Pending CN111644977A (en) | 2020-07-17 | 2020-07-17 | Polishing retainer ring and polishing head |
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Citations (10)
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JPH0251057U (en) * | 1988-10-03 | 1990-04-10 | ||
JP2000052241A (en) * | 1998-08-10 | 2000-02-22 | Speedfam-Ipec Co Ltd | Carrier for polishing device |
CN2570977Y (en) * | 2002-05-17 | 2003-09-03 | 陈水源 | Modified chip abrasion locating ring arrangement |
KR20050105608A (en) * | 2004-04-30 | 2005-11-04 | 주식회사 하이닉스반도체 | Wafer polishing apparatus |
CN1694782A (en) * | 2002-10-02 | 2005-11-09 | 恩辛格合成材料技术Gbr公司 | Retaining ring for holding semiconductor wafers in a chemical-mechanical polishing device |
JP2011224731A (en) * | 2010-04-20 | 2011-11-10 | Ntn Corp | Retainer ring and method of manufacturing retainer ring |
CN103619538A (en) * | 2011-06-29 | 2014-03-05 | 信越半导体株式会社 | Polishing head and polishing apparatus |
CN103639888A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | Fixing ring and polishing head |
CN105189045A (en) * | 2013-05-16 | 2015-12-23 | 信越半导体株式会社 | Workpiece polishing device |
CN206509884U (en) * | 2015-10-16 | 2017-09-22 | 应用材料公司 | Retaining ring for polishing system |
-
2020
- 2020-07-17 CN CN202010695884.2A patent/CN111644977A/en active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0251057U (en) * | 1988-10-03 | 1990-04-10 | ||
JP2000052241A (en) * | 1998-08-10 | 2000-02-22 | Speedfam-Ipec Co Ltd | Carrier for polishing device |
CN2570977Y (en) * | 2002-05-17 | 2003-09-03 | 陈水源 | Modified chip abrasion locating ring arrangement |
CN1694782A (en) * | 2002-10-02 | 2005-11-09 | 恩辛格合成材料技术Gbr公司 | Retaining ring for holding semiconductor wafers in a chemical-mechanical polishing device |
KR20050105608A (en) * | 2004-04-30 | 2005-11-04 | 주식회사 하이닉스반도체 | Wafer polishing apparatus |
JP2011224731A (en) * | 2010-04-20 | 2011-11-10 | Ntn Corp | Retainer ring and method of manufacturing retainer ring |
CN103619538A (en) * | 2011-06-29 | 2014-03-05 | 信越半导体株式会社 | Polishing head and polishing apparatus |
CN105189045A (en) * | 2013-05-16 | 2015-12-23 | 信越半导体株式会社 | Workpiece polishing device |
CN103639888A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | Fixing ring and polishing head |
CN206509884U (en) * | 2015-10-16 | 2017-09-22 | 应用材料公司 | Retaining ring for polishing system |
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Application publication date: 20200911 |