WO2012169850A3 - 3차원 비휘발성 메모리 장치 및 이의 제조 방법 - Google Patents

3차원 비휘발성 메모리 장치 및 이의 제조 방법 Download PDF

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Publication number
WO2012169850A3
WO2012169850A3 PCT/KR2012/004582 KR2012004582W WO2012169850A3 WO 2012169850 A3 WO2012169850 A3 WO 2012169850A3 KR 2012004582 W KR2012004582 W KR 2012004582W WO 2012169850 A3 WO2012169850 A3 WO 2012169850A3
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Prior art keywords
memory device
volatile memory
dimensional non
manufacturing same
conductive lines
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PCT/KR2012/004582
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English (en)
French (fr)
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WO2012169850A2 (ko
WO2012169850A9 (ko
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황철성
석준영
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서울대학교산학협력단
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Priority claimed from KR1020110056207A external-priority patent/KR101331859B1/ko
Priority claimed from KR1020110061665A external-priority patent/KR101297088B1/ko
Application filed by 서울대학교산학협력단 filed Critical 서울대학교산학협력단
Priority to US14/125,198 priority Critical patent/US9331272B2/en
Publication of WO2012169850A2 publication Critical patent/WO2012169850A2/ko
Publication of WO2012169850A3 publication Critical patent/WO2012169850A3/ko
Publication of WO2012169850A9 publication Critical patent/WO2012169850A9/ko
Priority to US15/095,501 priority patent/US9735203B2/en

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Abstract

본 발명의 실시예들은 3차원 비휘발성 메모리 장치 및 이의 제조 방법에 관한 것이다. 일 실시예에 따른 3차원 비휘발성 메모리 장치는, 서로 평행하게 이격된 복수의 도전성 라인들; 상기 복수의 도전성 라인들을 가로지르면서 서로 평행하게 이격된 복수의 도전성 평판들; 및 상기 복수의 도전성 라인들과 상기 복수의 도전성 평판들의 교차 영역들 사이에 각각 배치되는 비휘발성 정보 저장막 패턴을 포함한다.
PCT/KR2012/004582 2011-06-10 2012-06-11 3차원 비휘발성 메모리 장치 및 이의 제조 방법 WO2012169850A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US14/125,198 US9331272B2 (en) 2011-06-10 2012-06-11 3-dimensional (3D) non-volatile memory device and method of fabricating the same
US15/095,501 US9735203B2 (en) 2011-06-10 2016-04-11 3-dimensional (3D) non-volatile memory device and method of fabricating the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2011-0056207 2011-06-10
KR1020110056207A KR101331859B1 (ko) 2011-06-10 2011-06-10 3차원 비휘발성 메모리 장치 및 이의 제조 방법
KR10-2011-0061665 2011-06-24
KR1020110061665A KR101297088B1 (ko) 2011-06-24 2011-06-24 3차원 비휘발성 메모리 장치 및 이의 제조 방법

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US14/125,198 A-371-Of-International US9331272B2 (en) 2011-06-10 2012-06-11 3-dimensional (3D) non-volatile memory device and method of fabricating the same
US15/095,501 Division US9735203B2 (en) 2011-06-10 2016-04-11 3-dimensional (3D) non-volatile memory device and method of fabricating the same

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WO2012169850A2 WO2012169850A2 (ko) 2012-12-13
WO2012169850A3 true WO2012169850A3 (ko) 2013-04-04
WO2012169850A9 WO2012169850A9 (ko) 2013-05-16

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WO (1) WO2012169850A2 (ko)

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KR20210041692A (ko) * 2019-10-07 2021-04-16 삼성전자주식회사 가변 저항 메모리 소자
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WO2012169850A9 (ko) 2013-05-16
US20160225825A1 (en) 2016-08-04

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